Embodiments of the present invention are directed to a substrate for performing
ionization desorption on
porous silicon, methods for performing such
ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing
ionization desorption on
silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—R1, or O—SiR1, R2, R3 wherein R1, R2, and R3 are selected from the group consisting of
alkyl, alkenyl, alkynyl, aromatic, amino
alkyl, amino alkenyl, amino alkynyl, pyridinyl, pyrridonyl, and carbonyl,
alcohol and
carboxylic acid derivatives thereof having one to twenty five atoms, and hydroxyl, amino,
amide, carboxyl, ester, carbonyl, sulfhydryl,
sulfonyl, phosphoral, bromo, iodo, chloro and fluoro derivatives. The letter “n” represents an integer from 1 to infinity and any vacant valences are
silicon atoms,
hydrogen or impurities.