516results about "Gallium/indium/thallium compounds" patented technology

The invention discloses a method for synthesizing GaOOH and beta-Ga2O3 materials with relatively good crystal quality and relatively uniform phase by taking gallium nitrate as a gallium source through a hydrothermal method and high-temperature calcination treatment, and characterizing the GaOOH and beta-Ga2O3 materials. The hydrothermal method adopted by the method has the advantages of simplicity in operation, low cost and the like, and has great advantages in the aspect of synthesizing gallium oxide. And compared with the traditional methods such as CVD (Chemical Vapor Deposition) and the like, which need to introduce noble metal elements as catalysts, easily cause reduction of material crystal quality and introduce unnecessary impurity elements, the method disclosed by the invention can be used for synthesizing the gallium oxide material with relatively good crystal quality and relatively uniform phase by combining a hydrothermal method and high-temperature calcination treatment. GaOOH powder is synthesized by adding an anionic surfactant sodium dodecyl benzene sulfonate (SDBS) solution with different concentrations, and then the GaOOH powder is calcined at the high temperature of 900 DEG C to obtain beta-Ga2O3 materials with different sizes.

The invention belongs to the technical field of halide solid-state electrolyte, and relates to a high-conductivity and high-lithium-stability modified halide solid-state electrolyte material constructed by solid source plasma, and a preparation method and application of the high-conductivity and high-lithium-stability modified halide solid-state electrolyte material. According to the preparation method, a halide solid electrolyte is taken as a matrix, halogenated ammonium salt is taken as a solid source, and the halide solid electrolyte is subjected to synergistic doping modification of elements such as nitrogen, fluorine / chlorine / bromine and the like by utilizing a plasma technology, so that the modified halide solid electrolyte material is obtained. The modified halide solid electrolyte material shows excellent conductivity and lithium-lithium symmetrical battery performance, and has a wide market application prospect. Meanwhile, the preparation method provided by the invention is simple, rapid, efficient and convenient, is easy to control, and contributes to promoting the development and application of the high-performance halide solid electrolyte material.

The invention relates to the technical field of lithium ion batteries, in particular to a composite lithium-rich manganese-based positive electrode material and a preparation method and application thereof. The composite lithium-rich manganese-based positive electrode material is of a three-layer structure and sequentially comprises a lithium-rich manganese-based oxide positive electrode material matrix, a first coating layer and a second coating layer from inside to outside, the first coating layer is a mixture of halide solid electrolyte and lithium-containing oxide; and the second coating layer is an oxide solid electrolyte. The conductivity of a contact interface with a positive electrode material can be improved, the resistance is reduced, the moisture absorption degradation of halide is inhibited, the packaging difficulty is reduced, and the cycle performance of the halide-added solid electrolyte after moisture absorption is improved.

The invention belongs to the field of resource regeneration, and particularly relates to a method for separating and recycling copper, indium, gallium and selenium from a waste solar thin film battery. According to the method, the waste solar thin film cells are subjected to oxidizing roasting, deep eutectic leaching and extraction and reverse extraction, and high-quality conversion and purification of all valuable elements in the waste solar thin film cells to oxides of the valuable elements are achieved. According to the method, the process route is simple, high-selectivity extraction of indium is achieved through the synergistic effect of the deep eutectic solvent and P204, and meanwhile effective recovery of valuable elements such as copper and selenium is achieved. The recovered and prepared oxide can be widely applied to strategic emerging industries such as semiconductors, photovoltaics, aerospace, military and the like.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS-R1-COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

A raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution are added to a reaction system to adjust the pH of the reaction system from 1.0 to 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and the pH of the reaction system is then neutralized from 7.0 to 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide, followed by heating so as to form particles of ε-iron oxide in which Fe sites are partially substituted by other metal elements, and then, a slurry containing the particles is classified. The iron-based oxide magnetic powder has a particle shape close to a perfect sphere and is suitable for use in a magnetic recording medium.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS—R1—COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

Particular embodiments may provide an anode material, comprising a compound of formula Li2—X—Y, wherein: X and Y are each independently a metal atom or a metalloid atom; the anode material has a discharge potential of less than about 0.4 V vs. Li / Li+; and the molar ratio of Li:X:Y is 2:1:1.

A quantum dot-containing material includes: a quantum dot; and at least one ligand chemically bonded to the surface of the quantum dot and represented by a certain formula. A composition and an electronic apparatus, each include the quantum dot-containing material.

The invention provides an impurity removal method of a gallium-rich solution for a gallium-based fluorescent powder precursor, and belongs to the field of preparation of gallium-based fluorescent powder precursors. The method comprises the following steps: adding an oxidizing agent into an initial gallium-rich solution to carry out a first reaction so as to remove organic impurities in the initial gallium-rich solution and obtain a first gallium-rich solution; adding a composite impurity removal reagent into the first gallium-rich solution to carry out a second reaction to remove impurity elements such as calcium, silicon and vanadium in the first gallium-rich solution so as to obtain a second gallium-rich solution; and adding a sulfide type reagent into the second gallium-rich solution to carry out a third reaction so as to remove copper and iron impurity elements in the second gallium-rich solution, thereby obtaining the gallium-rich solution for the gallium-based fluorescent powder precursor. According to the method, various key impurity elements such as organic matters, alkaline earth metals, metalloids and heavy metals are directionally and efficiently removed through the impurity removal logic of oxidation impurity breaking, synergistic precipitation and deep vulcanization, so that the total content of the key impurity elements in the gallium-rich solution is remarkably reduced.

The invention relates to the technical field of semiconductor materials, and discloses a Si-doped epsilon-Ga2O3 material with high conductivity and deep ultraviolet light absorption performance and a preparation method, the doping concentration of Si in the Si-doped epsilon-Ga2O3 material is 0.83 at%-2.5 at%, and Si atoms replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3. By accurately controlling the Si doping concentration to be 0.83-2.5 at% and enabling Si atoms to replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3, the electronic structure of the material is effectively improved, the Fermi level moves upwards to enter a conduction band after Si doping, and Si3s orbital electrons occupy the conduction band bottom (CBM), so that the carrier concentration is increased, the effective mass of the electrons is reduced, and the conductivity of the material is remarkably improved; tests show that compared with an intrinsic epsilon-Ga2O3 material, the conductivity of the doped material is improved by 1-3 orders of magnitude, strict requirements of high-power electronic components and the like on the conductivity of the material are met, heat loss of the electronic components due to resistance is reduced, and the working efficiency and stability of the components are improved.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

The invention discloses a preparation method and a preparation device of nano indium oxide powder, and belongs to the technical field of nano material preparation. The method comprises the following steps: melting an indium block under a vacuum condition, and then atomizing into indium liquid mist; and introducing carrier gas to blow the indium liquid mist into the quartz rotating tube for microwave heating, then rotating the quartz rotating tube, introducing oxygen to react with the indium liquid mist, and after the reaction is completed, cooling to obtain indium oxide powder. By controlling the oxygen concentration and the indium liquid mist flow rate in the reaction chamber and accurately regulating and controlling parameters such as the rotation speed of the quartz tube, the microwave reaction temperature and the gas flow, regulation and control on the morphology and purity of indium oxide are realized, and the obtained indium oxide has the advantages of high purity, high crystallinity, specific morphology and controllable grain size; the method can be widely applied to the fields of electronics, optics, new energy and the like.

The invention belongs to the field of gas sensors, and discloses an indium oxide composite material based on palladium doping and a preparation method and application thereof.The preparation method comprises the steps that indium nitrate, absolute ethyl alcohol, ammonia water and deionized water are used for preparing an indium oxide material, then palladium ions are doped in an indium oxide solution to obtain a palladium ion-doped indium oxide solution, and the palladium ion-doped indium oxide solution is subjected to vacuum drying to obtain the palladium ion-doped indium oxide composite material. And reducing and centrifuging by using sodium borohydride to obtain a palladium-doped indium oxide composite material, and then preparing the palladium-doped indium oxide composite material into the gas sensor. The key technological process design of the preparation method is improved, so that the problems that the reaction of a pure indium oxide gas sensor needs relatively high activation energy and the surface of a pure semiconductor lacks selectivity to sulfide can be effectively solved, and the detection of dimethyl disulfide gas is realized.

The invention relates to the technical field of lithium ion batteries, and discloses a boron-fluorine co-doped halide solid electrolyte, a preparation method thereof and an all-solid-state battery, the boron-fluorine co-doped halide solid electrolyte is a boron-fluorine co-doped LiaMXb solid electrolyte, X is one of Cl, Br and I, M is Y, Sc, In or Zr, a is equal to 2-3.5, b is equal to 6, and a is equal to 1-3. According to the invention, a stable substance formed in situ by the boron-fluorine co-doped halide solid electrolyte after circulation inhibits the problems of electrolyte structure damage, ionic conductivity reduction, harmful reaction byproduct generation and the like caused by chemical reaction or electrochemical side reaction pathway of the electrolyte in the circulation process at low temperature; the problem of battery capacity attenuation caused by composite positive electrode side polarization increase in the cycle process of the battery is effectively improved, and the service life of the all-solid-state battery is prolonged.

The invention relates to the technical field of gas sensors for detecting H2S at room temperature, in particular to a preparation method of a high-sensitivity MoSe2-based gas sensitive material for detecting H2S at room temperature. The high-sensitivity MoSe2-based gas sensitive material for detecting H2S at room temperature is prepared by synthesizing MoSe2 nanoflowers by adopting a hydrothermal method and uniformly loading In2O3 nanoparticles on the surfaces of the MoSe2 nanoflowers by adopting a mechanical mixing method. The preparation method is simple and convenient in process and low in cost, the MoSe2 / In2O3 composite material prepared by the method has a relatively high specific surface area, and an II-type p-n heterojunction interface formed by the composite material effectively promotes separation and migration of current carriers. The response to 0.05 ppm H2S, 0.1 ppm H2S, 0.25 ppm H2S, 0.5 ppm H2S and 1ppm H2S at room temperature (the gas response is calculated according to the formula R = (Rg-Ra) / Ra) is 1.37, 1.47, 1.85, 2.74 and 4.82 respectively, the response is far better than that of an existing pure-phase MoSe2 gas sensitive material, and the working temperature is lower than that of an In2O3 pure-phase material. The research provides an effective method for constructing a gas sensitive material with a large specific surface area and II type p-n heterojunction, and further promotes the development of a gas sensitive technology.

The invention discloses a method for synergistically extracting vanadium oxytrichloride, gallium trichloride and iron-titanium alloy from vanadium slag, and belongs to the field of recycling of complex multi-metal resources. The method comprises the following steps: uniformly mixing the gallium-containing vanadium slag, carbon and chlorinated waste salt according to a certain proportion, and carrying out vacuum melting treatment to obtain a Fe-Ti alloy; then chlorine is introduced for chlorination treatment, and a gaseous product is obtained; the gaseous product is adsorbed by a molecular sieve with a function of selectively adsorbing VOCl3 to obtain VOCl3, and then GaCl3 is obtained through a cold trap. According to the method, efficient collaborative conversion and recovery of multi-metal resources of vanadium, gallium, iron and titanium in the vanadium slag are achieved, and the problems that multi-metal collaborative extraction in existing vanadium slag is difficult, and the separation efficiency is low can be effectively solved.

The embodiment of the invention provides a method for improving the reaction rate of preparing gallium oxide from metal gallium. Comprising the following steps: mixing metal gallium with water to form a reaction mixture; adding an accelerant into the reaction mixture to promote the oxidation reaction of the metal gallium; carrying out chemical reaction on the reaction mixture containing the accelerant under the action of an external physical field to generate hydroxyl gallium oxide powder; and carrying out thermal cracking on the hydroxyl gallium oxide powder in inert gas to obtain gallium oxide powder. By adding the accelerant and utilizing an external physical field, the reaction rate of preparing gallium oxide from metal gallium is effectively improved through a plurality of links and a synergistic effect, the problem of low reaction rate in the prior art is solved, and powerful technical support is provided for efficient preparation of high-purity gallium oxide.

Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50arcsec.

The invention pertains to a recycling process of a material comprising a halide solid electrolyte (HSE) of formula (I) M3-z(Mek+)fX3-z+k*f, said process comprising successively: a) adding at least one ammonium salt of X' to a solution comprising the HSE, wherein X and X' are halogens, in particular independently chosen from Cl, Br, I and any combination thereof; b) filtering and evaporating the solution obtained in step a) to obtain a dry powder; c) heating the dry powder obtained in step b), and d) obtaining a recycled HSE of formula (I). The invention further concerns a cathode composite and an electrolyte comprising a recycled HSE obtained from the recycling process according to the invention and an all-solid-state battery comprising such a cathode composite and / or electrolyte.

The application belongs to the technical field of sensitive materials, and discloses a high-performance TiO2@In2O3 / Pd sensitive film for a MEMS gas sensor, a synthesis method thereof and a MEMS gas sensor. The method comprises the following steps: synthesizing mesoporous TiO2 nanoparticle balls; mixing indium salt, an alkaline compound, a surfactant and the mesoporous TiO2 nanoparticle balls uniformly, and then performing hydrothermal reaction; centrifuging, washing and drying the product of the hydrothermal reaction, and then performing first annealing treatment in an air atmosphere to obtain In2O3-coated titanium dioxide nanoparticle balls TiO2@In2O3; modifying palladium nanoparticles to the nanoparticle balls TiO2@In2O3 by a solution method, centrifuging, washing and drying, and then performing second annealing treatment in a hydrogen atmosphere to obtain In2O3-coated titanium dioxide nanoparticle balls TiO2@In2O3 / Pd with Pd modification; and manufacturing the nanoparticle balls TiO2@In2O3 / Pd into a sensitive film. The sensitive film manufactured by the above method can improve the sensitivity of gas detection.

The present invention belongs to the field of nanomedicine technology, and specifically relates to an iron metabolism disruptor and its application. The present invention provides an iron metabolism disruptor that can be used for tumor iron metabolism treatment. The present invention also provides a para-apoptosis inducer that can induce para-apoptosis in tumor cells and enhance immunotherapy. The novel iron metabolism disruptor gallium sulfide nanodots obtained by the present invention reprogram the iron metabolism axis by releasing H2S and releasing Ga 3+ Replacing Fe sites has the dual functions of "reprogramming" and "interfering" with iron metabolism pathways. GaS nanodots disrupt tumor cell iron metabolism, induce para-apoptosis, and modulate macrophage phenotype, enhancing tumor therapy.

Provided is a method for producing semiconductor nanoparticles that exhibit band-edge luminescence and have an emission spectrum with a narrow half-width. The method for producing semiconductor nanoparticles comprises: preparing a first mixture containing an organic solvent and at least one compound selected from the group consisting of compounds having an indium (In)-sulfur (S) bond and compounds having a gallium (Ga)-sulfur (S) bond; adjusting the first mixture to a first temperature in the range of 40-180°C, and then mixing with a solution containing a silver (Ag) salt and an organic solvent to obtain a second mixture including composite particles of silver sulfide and a sulfide containing at least one of indium and gallium; and heat-treating the second mixture by adjusting the second mixture to a second temperature in the range of 130-240°C, and maintaining the second temperature for one second or more to obtain first semiconductor nanoparticles.

Provided is a production method for semiconductor nanoparticles that can exhibit band edge emission at a short peak emission wavelength. The production method for semiconductor nanoparticles involves obtaining a first mixture that includes a Ag salt, an In salt, a compound that includes Ga and S, and an organic solvent and performing a heat treatment on the first mixture at a temperature of 125°C–300°C to obtain first semiconductor nanoparticles.

The application discloses a lithium ion battery positive electrode material, a preparation method and application thereof, wherein the positive electrode material comprises LiNi x Co y Mn (1‑x‑y‑z) M z O2, wherein M is composed of at least three kinds of metals, and x is greater than or equal to 0.8, x+y is less than or equal to 0.95, and z is less than or equal to 0.05. The lithium ion battery positive electrode material adopts a high-entropy doping mode, a plurality of metal elements are doped at the same time, the performance of the nickel-cobalt-manganese ternary material is improved in multiple aspects, and therefore the comprehensive performance of the nickel-cobalt-manganese ternary material is improved.

In an aspect, a mixed metal oxide comprises or consists essentially of: a mixture comprises or consisting essentially of 0.30 to 0.69 parts by mole Mg, 0.20 to 0.69 parts by mole Zn, 0.01 to 0.30 parts by mole of a third element selected from Al and Ga, and, either, when the third element is Al, 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids, or, when the third element is Ga, 0.00 to 0.15 parts by mole of other elements selected from metals and metalloids, wherein the sum of all parts by mole of Mg, Zn, the third element, and the other elements amounts to 1.00, wherein the amount in parts by mole of the other elements is lower than the amount in parts by mole of Mg and is lower than the amount in parts by mole of Zn; oxygen; and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least two regions. One of the regions includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu) and the other of the regions includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). In an analysis of the composite oxide by energy dispersive X-ray spectroscopy, the detected concentration of the element M1 in a first region is less than the detected concentration of the element M2 in a second region, and a surrounding portion of the first region is unclear in an observed mapping image of the energy dispersive X-ray spectroscopy.

A method of synthesizing aluminum oxide includes reacting a gallium and aluminum composite in a hydrogen evolution reaction with water to form an aluminum byproduct having at least one of aluminum hydroxide or aluminum oxyhydroxide. The method also includes removing the aluminum byproduct and calcinating the aluminum byproduct to form aluminum oxide.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and / or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

The invention discloses a high-temperature-resistant material with a recessive fluorescent anti-counterfeiting function, a preparation method of the high-temperature-resistant material and application of the high-temperature-resistant material to the surface of a ceramic tile. The preparation method comprises the following steps: by taking zinc gallate system inorganic powder as a luminescent material, firstly synthesizing the zinc gallate system inorganic powder by a solid phase method or a liquid phase method; and then coating the powder on the ground glaze of the ceramic tile, covering a transparent cover glaze layer on the surface, and performing high-temperature one-time firing in an oxidizing atmosphere. The anti-counterfeiting mark is invisible under visible light, presents bright white light under ultraviolet light of 254 nm, and presents red light under ultraviolet light of 365 nm. The anti-counterfeiting mark and the ceramic product are integrated into a whole, so that the defect that the ceramic product obtained by a low-temperature anti-counterfeiting technology or a sticker anti-counterfeiting technology and the like in the prior art is not wear-resistant or easy to remove is overcome. The method has a positive promotion effect on anti-counterfeiting of ceramic products and control of commodity fleeing behaviors in the ceramic product market.