826results about "Gallium/indium/thallium compounds" patented technology

The invention discloses a method for synthesizing GaOOH and beta-Ga2O3 materials with relatively good crystal quality and relatively uniform phase by taking gallium nitrate as a gallium source through a hydrothermal method and high-temperature calcination treatment, and characterizing the GaOOH and beta-Ga2O3 materials. The hydrothermal method adopted by the method has the advantages of simplicity in operation, low cost and the like, and has great advantages in the aspect of synthesizing gallium oxide. And compared with the traditional methods such as CVD (Chemical Vapor Deposition) and the like, which need to introduce noble metal elements as catalysts, easily cause reduction of material crystal quality and introduce unnecessary impurity elements, the method disclosed by the invention can be used for synthesizing the gallium oxide material with relatively good crystal quality and relatively uniform phase by combining a hydrothermal method and high-temperature calcination treatment. GaOOH powder is synthesized by adding an anionic surfactant sodium dodecyl benzene sulfonate (SDBS) solution with different concentrations, and then the GaOOH powder is calcined at the high temperature of 900 DEG C to obtain beta-Ga2O3 materials with different sizes.

The invention belongs to the technical field of halide solid-state electrolyte, and relates to a high-conductivity and high-lithium-stability modified halide solid-state electrolyte material constructed by solid source plasma, and a preparation method and application of the high-conductivity and high-lithium-stability modified halide solid-state electrolyte material. According to the preparation method, a halide solid electrolyte is taken as a matrix, halogenated ammonium salt is taken as a solid source, and the halide solid electrolyte is subjected to synergistic doping modification of elements such as nitrogen, fluorine / chlorine / bromine and the like by utilizing a plasma technology, so that the modified halide solid electrolyte material is obtained. The modified halide solid electrolyte material shows excellent conductivity and lithium-lithium symmetrical battery performance, and has a wide market application prospect. Meanwhile, the preparation method provided by the invention is simple, rapid, efficient and convenient, is easy to control, and contributes to promoting the development and application of the high-performance halide solid electrolyte material.

The invention pertains to a recycling process of a material comprising a halide solid electrolyte (HSE) of formula (I) M3-z(Mek+)fX3-z+k*f, said process comprising successively: a) adding (an) ammonium salt(s) of X' to a solution comprising the HSE, wherein X and X' are halogens, in particular independently chosen from Cl, Br, I and any combination thereof; b) filtering and evaporating the solution obtained in step a) to obtain a dry powder; c) heating the dry powder obtained in step b), and d) obtaining a recycled HSE of formula (I). The invention further concerns a cathode composite and an electrolyte comprising a recycled HSE obtained from the recycling process according to the invention and an all-solid-state battery comprising such a cathode composite and / or electrolyte.

The invention relates to the technical field of lithium ion batteries, in particular to a composite lithium-rich manganese-based positive electrode material and a preparation method and application thereof. The composite lithium-rich manganese-based positive electrode material is of a three-layer structure and sequentially comprises a lithium-rich manganese-based oxide positive electrode material matrix, a first coating layer and a second coating layer from inside to outside, the first coating layer is a mixture of halide solid electrolyte and lithium-containing oxide; and the second coating layer is an oxide solid electrolyte. The conductivity of a contact interface with a positive electrode material can be improved, the resistance is reduced, the moisture absorption degradation of halide is inhibited, the packaging difficulty is reduced, and the cycle performance of the halide-added solid electrolyte after moisture absorption is improved.

The invention belongs to the field of resource regeneration, and particularly relates to a method for separating and recycling copper, indium, gallium and selenium from a waste solar thin film battery. According to the method, the waste solar thin film cells are subjected to oxidizing roasting, deep eutectic leaching and extraction and reverse extraction, and high-quality conversion and purification of all valuable elements in the waste solar thin film cells to oxides of the valuable elements are achieved. According to the method, the process route is simple, high-selectivity extraction of indium is achieved through the synergistic effect of the deep eutectic solvent and P204, and meanwhile effective recovery of valuable elements such as copper and selenium is achieved. The recovered and prepared oxide can be widely applied to strategic emerging industries such as semiconductors, photovoltaics, aerospace, military and the like.

The invention relates to the technical field of thallium recovery and treatment, in particular to a method for efficiently recovering thallium from a complex solution. The invention discloses a method for efficiently recovering thallium in a complex solution. The method comprises the following steps: S1, multi-stage replacement; a metal displacer is added into the thallium-containing feed liquid, a multi-stage displacement reaction is carried out, and the pH value during the multi-stage displacement reaction is 3-5; after the reaction is finished, separating to obtain thallium-removed feed liquid and thallium-containing solid; s2, dissolving; dissolving the thallium-containing solid with an inorganic acid to form a thallium-containing solution; s3, oxidizing and precipitating; and adding an oxidizing agent into the thallium-containing solution, adjusting the pH value of the solution to 1-3 after the oxidation is finished, generating a precipitate, and separating to obtain a thallium hydroxide solid. The method disclosed by the invention is wide in application range, can be used for treating thallium-containing wastewater with various concentrations, is simple in process and easy to implement, and meanwhile, thallium and other valuable metals can be recycled, so that efficient recovery and utilization of resources are realized.

The invention belongs to the technical field of new materials, and discloses a method for preparing indium cerium oxide powder based on an electrochemical method, which comprises the following steps: by taking indium cerium alloy as an anode and an inert electrode as a cathode, carrying out electrolytic reaction in an alkaline electrolyte to generate an indium cerium hydroxide precipitate; the hydroxide precipitate is pyrolyzed after being washed, and indium cerium oxide powder is generated. According to the method, an electrolytic method is adopted for preparing mud of indium cerium hydroxide, the grain size of the mud is very small, in the precipitation reaction, the indium cerium hydroxide is evenly mixed, then pyrolysis is conducted, and the indium cerium oxide powder with good uniformity can be obtained. Meanwhile, the invention further provides the cerium indium oxide powder, the target material and the transparent conductive oxide film which are prepared on the basis of the method.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS-R1-COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

The invention relates to an indium oxide carbon monoxide gas-sensitive material as well as a preparation method and application thereof. The gas-sensitive material has a heterogeneous three-stage hierarchical structure, is prepared from indium oxide sheets with a hollow structure consisting of small-diameter nanorods and a high specific surface area, shows rich active crystal faces and adsorption oxygen bonds, can effectively adsorb more oxygen and carbon monoxide gas molecules, and promotes the oxygen and carbon monoxide gas molecules to generate a redox reaction with hydrogen on the surface of the material, so that the gas-sensitive material has a good application prospect. Therefore, the detection precision of the carbon monoxide gas is obviously improved. According to the preparation method, toxic materials are not used, preparation is safe, the synthesis route is simple, repeatability is good, cost is low, and a new thought is provided for efficient and environment-friendly preparation of high-performance gas sensitive sensor materials.

A raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution are added to a reaction system to adjust the pH of the reaction system from 1.0 to 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and the pH of the reaction system is then neutralized from 7.0 to 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide, followed by heating so as to form particles of ε-iron oxide in which Fe sites are partially substituted by other metal elements, and then, a slurry containing the particles is classified. The iron-based oxide magnetic powder has a particle shape close to a perfect sphere and is suitable for use in a magnetic recording medium.

The invention belongs to the technical field of solid electrolytes, and relates to a selenium-doped sulfide solid electrolyte as well as a preparation method and application thereof. The general chemical formula of the sulfide solid electrolyte is Li < 6 + / -iP < 1-x > MxS < 5-y > SeyX, i is greater than or equal to 0 and less than 1, x is greater than 0 and less than 1, y is greater than 0 and less than 1, M is one or more of Zr, Ta, Nb, Mo, Bi, In and Y, and X is one or more of Cl, Br and F. According to the invention, the selenium element with larger ionic radius and lower electronegativity is introduced to replace the sulfur element, and Zr, Ta, Nb, Mo, Bi, In or Y elements are introduced, so that the doped sulfide solid electrolyte system has excellent stability to air, organic solvents and lithium while ensuring high ionic conductivity, and the assembled all-solid-state battery shows excellent cycle stability.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS—R1—COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

The invention discloses a solid-state electrolyte and a solid-state lithium metal battery. A preparation method of the solid-state electrolyte comprises the following steps: preparing a Li1. 3Al0. 3Ti1. 7( PO4) (LATP) solid-state electrolyte by adopting a solid-phase sintering method; the preparation method comprises the following steps: dissolving InCl3 and polyacrylic acid (PAA) in isopropanol to form a colorless precursor solution; dripping the solution on the surface of the LATP solid electrolyte and coating by using a spin coater; and the coated and dried LATP is put into a tubular furnace to be sintered, and the In2O3 coated LATP is obtained. Through in-situ electrochemical reaction of indium oxide and lithium metal, an interface layer composed of a Li2O phase and a LixIn alloy is constructed. Wherein the Li2O phase has relatively low lithium ion migration energy barrier and electronic insulation capability; the LixIn alloy can improve the ion diffusion coefficient of the lithium side, and has very high affinity to lithium metal and LATP. According to the Li2O / LixIn interface layer prepared by the preparation method disclosed by the invention, tight contact between lithium metal and LATP is maintained, side reaction is avoided, interface ion transmission kinetics is improved, and uniform dendrite-free lithium deposition is realized.

Methods for recovering the performance of a halide-based solid electrolyte are described. In one aspect, a halide-based solid electrolyte that has been exposed to air is subjected to a heat-treatment process, where the performance of the halide-based solid electrolyte is recovered, e.g., the ionic conductivity obtained after heat treatment is recovered to a level similar to that before air exposure.

The invention belongs to the technical field of nano material heterojunctions, and particularly relates to a NiO / Ag / ZnIn2S4 heterojunction nanosheet array, a preparation method thereof and a room temperature gas sensor. The device comprises a substrate and a NiO / Ag / ZnIn2S4 heterojunction nanosheet array which grows on the surface of the substrate in situ, the NiO / Ag / ZnIn2S4 heterojunction nanosheet array is composed of NiO porous nanosheets, Ag nanoparticles and ZnIn2S4 nanosheets, the NiO nanosheets are of an array structure growing vertically in a staggered mode, the Ag nanoparticles are evenly dispersed on the surfaces of the NiO porous nanosheets, and the ZnIn2S4 nanosheets wrap the NiO porous nanosheets. The preparation process is simple, the cost is low, the NiO / Ag / ZnIn2S4 heterojunction nanosheet array has good heterogeneous interface contact, electron transfer between NiO and ZnIn2S4 is promoted due to existence of Ag nanoparticles, and the specific surface area of the material is increased due to wrapping of ZnIn2S4. The NiO / Ag / ZnIn2S4 heterojunction nanosheet array can be applied to a room-temperature gas sensor, and specifically, room-temperature high-selectivity detection of triethylamine under excitation of white light can be realized.

Particular embodiments may provide an anode material, comprising a compound of formula Li2—X—Y, wherein: X and Y are each independently a metal atom or a metalloid atom; the anode material has a discharge potential of less than about 0.4 V vs. Li / Li+; and the molar ratio of Li:X:Y is 2:1:1.

A quantum dot-containing material includes: a quantum dot; and at least one ligand chemically bonded to the surface of the quantum dot and represented by a certain formula. A composition and an electronic apparatus, each include the quantum dot-containing material.

The invention provides an impurity removal method of a gallium-rich solution for a gallium-based fluorescent powder precursor, and belongs to the field of preparation of gallium-based fluorescent powder precursors. The method comprises the following steps: adding an oxidizing agent into an initial gallium-rich solution to carry out a first reaction so as to remove organic impurities in the initial gallium-rich solution and obtain a first gallium-rich solution; adding a composite impurity removal reagent into the first gallium-rich solution to carry out a second reaction to remove impurity elements such as calcium, silicon and vanadium in the first gallium-rich solution so as to obtain a second gallium-rich solution; and adding a sulfide type reagent into the second gallium-rich solution to carry out a third reaction so as to remove copper and iron impurity elements in the second gallium-rich solution, thereby obtaining the gallium-rich solution for the gallium-based fluorescent powder precursor. According to the method, various key impurity elements such as organic matters, alkaline earth metals, metalloids and heavy metals are directionally and efficiently removed through the impurity removal logic of oxidation impurity breaking, synergistic precipitation and deep vulcanization, so that the total content of the key impurity elements in the gallium-rich solution is remarkably reduced.

The invention relates to the technical field of semiconductor materials, and discloses a Si-doped epsilon-Ga2O3 material with high conductivity and deep ultraviolet light absorption performance and a preparation method, the doping concentration of Si in the Si-doped epsilon-Ga2O3 material is 0.83 at%-2.5 at%, and Si atoms replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3. By accurately controlling the Si doping concentration to be 0.83-2.5 at% and enabling Si atoms to replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3, the electronic structure of the material is effectively improved, the Fermi level moves upwards to enter a conduction band after Si doping, and Si3s orbital electrons occupy the conduction band bottom (CBM), so that the carrier concentration is increased, the effective mass of the electrons is reduced, and the conductivity of the material is remarkably improved; tests show that compared with an intrinsic epsilon-Ga2O3 material, the conductivity of the doped material is improved by 1-3 orders of magnitude, strict requirements of high-power electronic components and the like on the conductivity of the material are met, heat loss of the electronic components due to resistance is reduced, and the working efficiency and stability of the components are improved.

A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.

The invention discloses a preparation method and application of a lithium-sulfur battery positive electrode material. The preparation method comprises the following steps: cross-linking chitosan and phytic acid to prepare porous biological carbon aerogel; compounding the porous biochar aerogel with a catalyst nano In2O3 to obtain a porous biochar aerogel-coated In2O3 composite material; performing freeze drying and microwave heating treatment to carbonize the aerogel to obtain an N, P co-doped three-dimensional porous biological carbon-coated In2O3 composite material; and compounding with elemental S to obtain an N and P co-doped three-dimensional porous biochar (at) In2O3 (at) S composite material, namely the lithium-sulfur battery positive electrode material. The positive electrode material with a'confinement-anchoring-catalytic conversion 'multifunctional coupling effect is constructed, when the positive electrode material is applied to the lithium-sulfur battery, confinement and anchoring of LiPSs can be achieved, catalytic conversion of the LiPSs can be promoted, the shuttle effect of the LiPSs is fundamentally inhibited, and the rate and the cycling stability of the LiPSs are remarkably improved; the method has the advantages of simple preparation process, environmental friendliness and the like.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

The present invention provides an ion-conducting solid containing an oxide characterized by the general formula Li 6+a-c-2d Y 1-a-b-c-d M1 a M2 b M3 c M4 d B3O9 is represented. (In the formula, M1 represents at least one metallic element selected from a group consisting of Mg, Mn, Zn, Ni, Ca, Sr, and Ba; M2 represents at least one metallic element selected from a group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, In, and Fe; M3 represents at least one metallic element selected from a group consisting of Hf, Sn, and Ti; M4 represents at least one metallic element selected from a group consisting of Nb and Ta; and a, b, c, and d represent real numbers, each within certain ranges, while satisfying 0.010 ≤ a + b + c + d < 1.000.)

The invention relates to the technical field of electrolyte materials, in particular to a preparation method of lithium indium halide nanocrystals and a solid-state battery, the method comprises the following steps: dissolving halide salt of lithium and halide salt of indium in a first solvent to obtain a mixed solution, the first solvent is a good solvent of the lithium indium halide nanocrystals, and the second solvent is a good solvent of the lithium indium halide nanocrystals; the second solvent comprises a poor solvent which can be mutually soluble with the first solvent and is a lithium indium halide nanocrystal, mixing the mixed solution with the second solvent, separating out a crystal crude product based on a solvent exchange method, and cleaning and drying the crystal crude product to obtain the lithium indium halide nanocrystal. The preparation method adopts a solvent exchange method to prepare the lithium indium halide nanocrystal, the process and operation are simple, batch preparation can be realized, the reproducibility is good, the obtained lithium indium halide nanocrystal is relatively small in particle size, uniform in particle size distribution and narrow in distribution peak, the ionic conductivity and yield of the material are improved, the utilization rate of the positive electrode active material is also improved, and the application prospect is wide. And the rate capability of the all-solid-state battery is further enhanced.

To provide a solid electrolyte, an electrode and a solid electrolyte battery that have excellent charge-discharge efficiency.SOLUTION: The solid electrolyte contains a compound represented by the formula (1), AaEbGcXd. In the formula (1), A, E, G and X represent specific elements or groups, a satisfies 0.5≤a<6, b satisfies 0<b<2, c satisfies 0.0001≤c<0.1, and d satisfies 0≤d≤6.1.SELECTED DRAWING: Figure 1

The embodiment of the invention discloses a wet chemical preparation method of an electrolyte material. The wet chemical preparation method comprises the following steps: providing a halide mother solution and a lithium source solution; slowly adding the lithium source solution into the halide mother solution for coprecipitation to generate a coprecipitation product; evaporating the halide mother liquor and the lithium source solution which do not participate in coprecipitation to crystallize and separate out a coprecipitation product; and carrying out low-temperature sintering on a co-precipitation product separated by crystallization to obtain the electrolyte material. According to the wet chemical preparation method of the electrolyte material, the lithium source solution is slowly added into the halide mother solution, evaporative crystallization and coprecipitation are combined, uniform crystallization of all components can be achieved, and segregation is avoided; and the lithium source solution is slowly added, so that the solution state in the evaporation process can be changed, and the crystal granularity of the product is controllable.

The invention discloses a preparation method and a preparation device of nano indium oxide powder, and belongs to the technical field of nano material preparation. The method comprises the following steps: melting an indium block under a vacuum condition, and then atomizing into indium liquid mist; and introducing carrier gas to blow the indium liquid mist into the quartz rotating tube for microwave heating, then rotating the quartz rotating tube, introducing oxygen to react with the indium liquid mist, and after the reaction is completed, cooling to obtain indium oxide powder. By controlling the oxygen concentration and the indium liquid mist flow rate in the reaction chamber and accurately regulating and controlling parameters such as the rotation speed of the quartz tube, the microwave reaction temperature and the gas flow, regulation and control on the morphology and purity of indium oxide are realized, and the obtained indium oxide has the advantages of high purity, high crystallinity, specific morphology and controllable grain size; the method can be widely applied to the fields of electronics, optics, new energy and the like.

The invention discloses a self-activated long-afterglow material with multi-mode luminescence, a preparation method and application, which can realize effective regulation and control of the multi-mode luminescence performance of fluorescent powder and can be applied to the fields of information encryption, anti-counterfeiting and the like. Based on the defect-rich matrix CaGa4O7, the defect state concentration and depth in the matrix are regulated and controlled by simply doping and replacing Ca < 2 + > with Pb < 2 + >, so that the multi-mode optical characteristics such as the afterglow intensity and decay time of the Ca1-xGa4O7: xPb < 2 + > fluorescent powder, the photochromic degree and the excitation time dependent on fluorescence are effectively regulated and controlled; through combination of multi-mode optical characteristics, the problem that a traditional encryption and anti-counterfeiting technology is single in mode is solved, and the method has great application value in the fields of information encryption, anti-counterfeiting and the like.

The invention belongs to the field of gas sensors, and discloses an indium oxide composite material based on palladium doping and a preparation method and application thereof.The preparation method comprises the steps that indium nitrate, absolute ethyl alcohol, ammonia water and deionized water are used for preparing an indium oxide material, then palladium ions are doped in an indium oxide solution to obtain a palladium ion-doped indium oxide solution, and the palladium ion-doped indium oxide solution is subjected to vacuum drying to obtain the palladium ion-doped indium oxide composite material. And reducing and centrifuging by using sodium borohydride to obtain a palladium-doped indium oxide composite material, and then preparing the palladium-doped indium oxide composite material into the gas sensor. The key technological process design of the preparation method is improved, so that the problems that the reaction of a pure indium oxide gas sensor needs relatively high activation energy and the surface of a pure semiconductor lacks selectivity to sulfide can be effectively solved, and the detection of dimethyl disulfide gas is realized.

The invention provides a preparation method of nano indium tin oxide powder, and belongs to the technical field of preparation of electronic ceramic transparent oxide functional inorganic materials. The preparation method comprises the following steps: in an oxygen-containing environment, performing electric arc gasification on an indium tin metal melt, and oxidizing metal steam generated by the electric arc gasification to obtain the nano indium tin oxide powder, the current applied for generating the electric arc is 500 to 1200 A, and the voltage is 50 to 120 V. The preparation method provided by the invention is simple, the oxidation reaction time is short, no exhaust gas is discharged, and meanwhile, the problems of wastewater and waste acid discharge and difficult impurity removal caused by addition of strong acid are avoided. The preparation method provided by the invention can realize continuous production and is high in production efficiency; and the particle size D50 of the prepared nano indium tin oxide powder can be kept to be less than 0.5 mu m and D90 is less than 1 mu m.