46results about "Gallium/indium/thallium compounds" patented technology

A method of synthesizing aluminum oxide includes reacting a gallium and aluminum composite in a hydrogen evolution reaction with water to form an aluminum byproduct having at least one of aluminum hydroxide or aluminum oxyhydroxide. The method also includes removing the aluminum byproduct and calcinating the aluminum byproduct to form aluminum oxide.

A method and kit for purifying radioactive gallium are provided. The method includes an aqueous solution containing or consisting of nitric acid and / or hydrochloric acid, radioactive gallium, and a zinc isotope, and a container containing a cation exchange material. The aqueous solution is passed through the container, binding the radioactive gallium to the cation exchange material. An aqueous rinsing solution containing or consisting of nitric acid and water is then passed through the container, eluting the zinc isotope from the cation exchange material. Finally, an aqueous elution solution suitable for eluting radioactive gallium from the cation exchange material is passed through the container and into a collection vessel, resulting in an aqueous solution containing radioactive gallium.

This invention relates to the field of semiconductor technology, specifically to a molecular junction of a metal oxide semiconductor and its applications, wherein the molecular junction is composed of oxygen vacancies and hydroxyl groups, which are bonded to the same metal atom to form an oxygen vacancy-hydroxyl metal oxide molecular junction (Oxygen vacancy-hydroxyl metal oxide, V). O (-M-OH). The molecular junction of this invention can achieve efficient hole injection / transmission, optimize interface band arrangement, and effectively suppress dark current.

To provide an apparatus for manufacturing oxide single crystals, a method for manufacturing gallium oxide single crystals using the apparatus, and a gallium oxide single crystal manufactured thereby. [Solution] By applying a method that uses the oxide pellet itself, which is to be made into a single crystal, as the crucible without using a separate crucible, the problem of impurities entering due to the crucible is minimized. Furthermore, by applying a method that mixes hydrocarbon fuel gas and oxygen gas and generates heat using a flame, the growth atmosphere for the oxide single crystal can be maintained in a high-oxygen atmosphere, enabling the production of high-quality oxide single crystals with few defects.

The present invention relates to a quantum dot synthesis method for synthesizing chalcopyrite-based quantum dots, the quantum dot synthesis method comprising: a nanoparticle production step for reacting a group I element and a group VI element to produce nanoparticles; and a cation diffusion step for diffusing group III element cations into the nanoparticles by heat treatment. Accordingly, there is provided a method for synthesizing quantum dots having good light-emitting characteristics having uniform particle diameters but not having compositional inhomogeneity.

This invention proposes a method for preparing and applying an indium sulfide photocatalytic material with specific vacancies. The method involves forming a first solution with ethanol and deionized water; dissolving InCl3·4H2O and thioacetamide, or InCl3·4H2O, thioacetamide, and hexamethylenetetramine, in the first solution by stirring; obtaining a clear solution; reacting the clear solution at a constant temperature; cooling after the reaction; and collecting the product by centrifugation; washing the product; and drying it at a constant temperature; finally, obtaining the photocatalytic material with specific vacancies. This invention introduces vacancies into In2S3, thereby regulating the surface active sites, enhancing its light utilization efficiency and the separation and transfer ability of photogenerated carriers, and improving the photocatalytic activity of N2 to NH3 reduction.

This invention relates to the field of CO2 resource utilization technology, specifically to a method and application for preparing gallium-based oxides with different crystal forms. The preparation method includes: using a gallium source and a precipitant as raw materials to precipitate a precursor, followed by calcination and plasma pretreatment of the precursor to obtain α-Ga2O3 or β-Ga2O3; or using a gallium source as raw material to calcine and undergo plasma pretreatment to obtain ε-Ga2O3. In this method, active species in the plasma reduce the thermal budget, suppress high-temperature phase transitions, and improve surface defects. This method simplifies the process, reduces costs, and achieves selective and controllable preparation of three crystal forms, demonstrating good industrialization prospects. When the gallium-based oxides are applied to the catalytic conversion of CO2, β-Ga2O3 exhibits a moderate band gap and a high oxygen vacancy concentration, demonstrating excellent CO2 conversion rate, CO selectivity, and energy efficiency, and good stability.

The invention discloses a monatomic-loaded indium oxide nanorod material, a preparation method thereof and application of the monatomic-loaded indium oxide nanorod material in a gas sensing film and a hydrogen sensor. Comprising an indium oxide nanorod substrate and monatomic Au loaded on the surface of the indium oxide nanorod substrate; the noble metal Au is dispersed on the indium oxide nanorod in a monatomic form, so that inactivation caused by easy agglomeration of the noble metal is avoided, the atom utilization rate is high, the reaction active sites are increased, and the hydrogen sensing reaction is enhanced. The sensor has high response value, good selectivity, linear response, cyclicity and long-term stability to hydrogen, and is beneficial to actual hydrogen detection.

The application discloses a method for preparing high-purity gallium oxide from high-purity metal gallium, and belongs to the technical field of wide-bandgap semiconductor materials. The method uses 5N-7N electronic-grade high-purity gallium as raw material, and sequentially completes raw material pretreatment, segmented low-temperature mild oxidation of high-purity oxygen, deep purification of water phase, vacuum low-temperature dehydration, and segmented high-temperature crystallization calcination in a high-purity oxygen atmosphere in a hundred-grade super-clean environment. No strong acid or strong base is introduced in the whole process, there is no chloride ion or nitrate ion residue, and problems such as crucible impurity dissolution, powder agglomeration and generation of impurity phases are effectively avoided. Finally, 6N-7N high-purity gallium oxide is prepared, the total content of metal impurities is lower than 0.5ppm, the crystal phase is single, and the dispersibility is excellent, so that the high-purity gallium oxide can be directly applied to high-end fields such as single-crystal semiconductor substrates, power device epitaxy and deep ultraviolet optoelectronic devices, the process flow is short, the impurity controllability is strong, and the method is suitable for industrial stable mass production.

Particular embodiments may provide an anode material, comprising a compound of formula Li2—X—Y, wherein: X and Y are each independently a metal atom or a metalloid atom; the anode material has a discharge potential of less than about 0.4 V vs. Li / Li+; and the molar ratio of Li:X:Y is 2:1:1.

The utility model discloses an acid-soluble leakproof tank for indium oxide production. The acid-soluble leakproof tank comprises a titanium alloy reaction tank and supporting legs, by adopting the collision thorns, the crushing thorns, the extrusion block and the sealing disc, raw materials and acid liquor can be respectively added in the indium oxide production leaching stage, and at the moment, the raw materials can be crushed for multiple times through the collision thorns and the crushing thorns, so that the granularity of the raw materials is reduced; meanwhile, small particles can be ground and further refined through cooperation of an extrusion block and crushing thorns, so that the raw materials can be in more sufficient contact with acid liquor subsequently, the overall leaching effect is improved, then the particles fall into a discharging hopper through sieve holes, and at the moment, the sealing disc is in intermittent contact with the discharging hopper, so that the leaching efficiency is improved. The device is simple in structure and convenient to operate, small-amount and multiple-time discharging operation of raw materials can be achieved, large-batch introduction of the raw materials is avoided, the raw materials can make full contact with acid liquor, the overall use quality is improved, and the device has the advantages of being good in leaching effect, capable of achieving material smashing and intermittent feeding.

This invention discloses a composite material for wastewater treatment, including an oxygen-vacancy indium oxide / carbon composite material. The indium oxide / carbon composite material uses modified activated carbon powder as a substrate, and through in-situ co-precipitation and thiourea-assisted reduction, a nano-active layer rich in high concentrations of oxygen vacancies is uniformly constructed on the surface of the carbon powder and within its pores. This invention also discloses methods for preparing and applying the composite material. The composite material obtained by this invention can not only efficiently treat long-chain PFAS pollutants, but also exhibits excellent removal efficiency for short-chain PFAS that are difficult to remove using traditional technologies, which is of significant practical importance for ensuring drinking water safety and restoring complex aquatic ecosystems.

This invention relates to a series of alkali metal rare earth chalcogenides and a series of alkali metal rare earth chalcogenide nonlinear optical crystals, their preparation methods, and their applications. The general chemical formula for both the series of halides and the nonlinear optical crystals is A3Ln. 11 Ga 19 Q 45 X3, where A = K, Rb, Cs; Ln = La, Pr, Nd; Q = S, Se; X = Cl, Br, I, all belong to the hexagonal crystal system with space group and cell parameter Z = 1. This series of halides is synthesized using a high-temperature solid-state method, while this series of nonlinear optical crystals is grown using a high-temperature solution method or the Bridgman process. This material can be used to manufacture second harmonic generators, up- and down-frequency converters, optical parametric oscillators, etc.

The application discloses a n-butanol sensing material and a preparation method thereof, and belongs to the technical field of semiconductor metal oxide gas sensors. First, In2O3 hexagonal hollow tubes and single-atom catalyst Zn x Co1-N-C nanoparticles are respectively prepared, and then a hexagonal hollow tube-shaped Zn x Co1-N-C / In2O3 composite sensing material is prepared by using a mechanical mixing method, and the sensing material is prepared into a gas sensor. At an optimal operating temperature of 240 DEG C, the gas sensor assembled from the Zn7Co1-N-C / In2O3 material with a zinc-cobalt molar ratio of 7:1 has the best performance, the response time of the gas sensor to 0.5ppm n-butanol is 43s, the recovery time is 200s, the response and recovery sensitivity of the gas sensor to n-butanol with different concentrations are good, the response value is as high as 145.0 at a concentration of 5ppm, and the composite sensing material has excellent selectivity to n-butanol and good practical application value.

This application discloses a composite material, its preparation method, a light-emitting device, and a display device. The composite material has a core-shell structure. The core material of the composite material includes zinc oxide, which comprises zinc oxide nanoparticles or doped zinc oxide nanoparticles. The shell material of the composite material includes ZnGa2O4. The composite material proposed in this application exhibits superior thermal and electrical stability.

The present invention relates to a positive electrode active material for an all-solid-state battery, a method for producing the same, a positive electrode for an all-solid-state battery including the same, and an all-solid-state battery.

The present invention relates to an apparatus for preparing an oxide single crystal, a method for preparing a gallium oxide single crystal using the same, and a gallium oxide single crystal prepared according to the method, and more particularly, to an apparatus for preparing a single crystal and a method for preparing a gallium oxide single crystal using the same, according to the present invention, a method in which oxide particles for producing a single crystal are used as a melting furnace instead of oxide particles per se for producing a single crystal is used as the melting furnace, thereby minimizing the problem of impurity inflow through the melting furnace, and the growth atmosphere of the oxide single crystal is maintained at a high oxygen atmosphere by using a method in which a hydrocarbon fuel gas and oxygen are mixed and heat is released by spark. Therefore, the high-quality oxide single crystal can be prepared.

The application discloses a neodymium oxide-indium oxide composite porous nanorod material and a preparation method and application thereof, and comprises an indium oxide porous nanorod and a neodymium oxide layer loaded on the surface of the indium oxide porous nanorod; and the indium oxide porous nanorod is assembled by indium oxide nanoparticles. The prepared neodymium oxide-indium oxide composite porous nanorod material is composed of a large number of nanoparticle accumulations, the unique micro-morphology characteristics of the material are utilized, the specific surface area and gas diffusion path of the material are significantly increased, and therefore the sensitivity and identification capability of the material to H2S gas are improved.

This invention discloses a core-shell structured rare-earth oxide / gallium oxide composite particle for magnetoresistive thin film preparation and its preparation method. The composite particle comprises a core and a shell, wherein the core is composed of La. 1‑x Ca x The rare-earth oxide precursor powder of TmO3 has a gallium oxide shell. The preparation method includes: first, preparing a homogeneous suspension of the rare-earth oxide precursor powder and liquid gallium metal; then, spreading the precursor powder in the suspension, followed by stirring, multi-stage ultrasonic dispersion, and separation using an inert ceramic scraper to obtain core-shell structured precursor particles coated with liquid gallium metal; finally, sintering to transform the liquid gallium metal into a gallium oxide shell. When used as a thermal resistance evaporation source, the composite particles of this invention effectively solve the problems of compositional shift and evaporation source explosion and splashing caused by vapor pressure differences in multi-component materials. They offer advantages such as flexible component design, good thermal stability, and low preparation cost, making them suitable for preparing magnetoresistive effect composite thin films.

The application belongs to the technical field of solid oxide cell electrode materials, and particularly relates to a perovskite structure electrode material for reversible SOFC-SOEC and a preparation method thereof. 1‑a Ba a Co 1‑(x+y) Fe x Ni y O 3‑δ and a second perovskite phase La 1‑c Sr c Ga 1‑d Mg d O 3‑δ are compounded. The preparation method comprises synthesizing two-phase powders respectively, preparing slurry and coating by using a specific compound type amphiphilic dispersant, and finally co-sintering and forming by heat treatment. By constructing a three-dimensional network of two-phase mutual penetration, the chemical expansion stress of the electrode in reversible operation is effectively relieved, high catalytic activity and fast ion conduction are ensured, and therefore the electrochemical performance and long-term cycle stability of the electrode in the SOFC and SOEC dual mode are significantly improved.

This invention discloses a method for preparing a halide solid electrolyte. The method includes obtaining a mixed solution of raw materials LiCl and MCl3 in a stoichiometric ratio, freezing the mixed solution into a solid at a freezing temperature below -60°C, then sublimating and evaporating the water in a vacuum environment to obtain the intermediate product Li3MCl6·2H2O, and then sintering it at 180°C-220°C in a vacuum environment to remove the water of crystallization to obtain Li3MCl6. The resulting halide solid electrolyte exhibits high capacity and excellent cycle performance. This invention yields a halide solid electrolyte with small particle size and good particle dispersion, which is beneficial for forming a good kinetic transport network with the conductive agent and active material. This ensures that ions / electrons pass through at most one active material particle before reaching the conductive solid electrolyte / carbon, thereby improving the battery's capacity utilization and rate capability.

The present invention provides a display device having a novel material and a transistor made from the novel material. [Solution] The material is a composite oxide having at least two regions, one of which contains In, Zn, and element M1 (element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, or Cu), and the other region contains In, Zn, and element M2 (element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, or Cu). When the composite oxide is analyzed by energy-dispersive X-ray spectroscopy, element M1 in the first region is detected in smaller amounts than element M2 in the second region, and the peripheral area of ​​the first region is observed to be blurred by mapping analysis in energy-dispersive X-ray spectroscopy.

The present application relates to the field of non-ferrous metal recovery, and particularly relates to a method for recovering thallium from waste SCR denitration catalyst in the cement industry. The method comprises the following steps: after the waste SCR denitration catalyst is dedusted, the waste catalyst is calcined, then ground and screened to obtain waste catalyst powder; hydrogen peroxide solution and a complexing agent are mixed, stirred and heated to obtain a first solution; then the first solution is mixed with the waste catalyst powder, and reacts under mechanical stirring, then is left to stand and filtered to obtain a second solution; the second solution is heated and concentrated, then mixed with potassium iodide, and reacts under ultrasonic condition, and is left to stand and filtered. The method can recover high-quality thallium iodide products with a purity of 99.9% or above, and the thallium recovery rate can reach 99.5% or above. The present application can not only reduce the difficulty of waste catalyst treatment, but also obtain high-value-added products, which has important significance for environmental protection and resource recycling.

The present disclosure relates to the technical field of non-ferrous smelting, and particularly relates to a method for preparing ITO target precursor by using vanadium-titanium magnetite blast furnace gas mud, comprising the following steps: vanadium-titanium magnetite blast furnace gas mud is modulated into ore slurry, the ore slurry is subjected to cyclone classification to obtain overflow material and tailings; the overflow material is dried to obtain indium-rich material; vacuum smelting is performed on the indium-rich material after adding coal powder to obtain fume dust and iron-rich slag; the fume dust is subjected to acid leaching by using indium-tin-containing waste acid to obtain leaching solution; the leaching solution is subjected to primary centrifugal extraction to obtain extraction organic phase; the extraction organic phase is subjected to primary back extraction to obtain back extraction solution; the back extraction solution is subjected to secondary centrifugal extraction to obtain organic phase and aqueous phase; the aqueous phase is subjected to acid treatment, and then is subjected to suction filtration and drying to obtain tin oxide solid; the organic phase is subjected to secondary back extraction, and then is subjected to vacuum flash evaporation and drying to obtain indium oxide solid. The present disclosure realizes efficient extraction of indium and tin by using vanadium-titanium magnetite blast furnace gas mud and indium-tin-containing waste acid.

The present disclosure relates to processes for the production of hydrogen gas involving a metal in contact with a liquid. The present disclosure also relates to use of the metal for production of hydrogen as described herein, and hydrogen produced by the process described herein.

A solid electrolyte contains A, M, F, and X. A is at least one element selected from a group consisting of Li, Na, and K. M is a metallic element(s) other than A or a metalloid element(s). X is at least one element selected from a group consisting of Cl, Br, and I. This provides the solid electrolyte with high safety and high ion conductivity.

Various solid-state electrolyte materials having a desired chemical composition as well as method and apparatus of producing the solid-state electrolyte (SSE) materials are provided. The method includes drying a gas-liquid mixture to form a gas-solid mixture, obtaining powdered particles, and annealing the powdered particles to obtain crystalline products of the SSE material. The liquid mixture is prepared using stoichiometrically amounts of lithium-containing salt and one or more inorganic salts and then mixed with a gas. The salts are prepared in solutions and the molar ratio of the solutions of lithium-containing salt and the one or more inorganic metal salt are digitally controlled, thereby obtaining large scale synthesis of the SSE materials. The processing apparatus generally includes a mist generator, a power jetting chamber, one or more gas-solid separators, and one or more reactors. Various types of SSE materials can then be prepared and obtained.

The present disclosure relates to an apparatus for producing an oxide single crystal, a method of producing a gallium oxide single crystal using the same, and a gallium oxide single crystal produced thereby. More specifically, the present disclosure relates to an apparatus for producing a single crystal and a method for producing a gallium oxide single crystal using the same, which may minimize the problem of impurities being introduced by a crucible, by applying a method of using the oxide pellets themselves, which are to be made into a single crystal, as a crucible without using a separate crucible, and maintain the growth atmosphere of the oxide single crystal at a high-oxygen atmosphere by applying a method of generating heat using a flame consisting of a mixture of a hydrocarbon fuel gas and oxygen gas, thereby producing a high-quality oxide single crystal with few defects.

The application belongs to the technical field of solid oxide electrochemical devices, and particularly relates to a low-temperature cerium-based composite electrolyte film with high ionic conductivity and a preparation process thereof. The film has a gradient function integrated structure and sequentially comprises a transmission layer composed of dense gadolinium-doped ceria, a functional layer constructed thereon, which is composed of a porous gadolinium-doped ceria skeleton and a lanthanum-strontium-gallium-magnesium oxide-alkali carbonate eutectic composite phase filled in the pores, and a SmNiO3 or SmCoO3 ultrathin interface modification layer covering the surface of the functional layer. The preparation process involves transmission layer forming sintering, functional layer slurry coating and step-by-step eutectic reaction heat treatment, and atomic layer deposition of the interface layer. The composite film can realize high oxygen ion conductivity and low electronic conductivity in a medium-low temperature range of 400-650 DEG C, significantly improves the battery efficiency and stability, and reduces the system operating temperature and cost.

This invention relates to a gallium-containing pseudoboehmite and a gallium oxide-alumina composite. The gallium-containing pseudoboehmite, elementally, contains 0.05 wt%–8.5 wt% gallium and 30.0 wt%–45.0 wt% aluminum. XRD characterization shows diffraction peaks at 2θ angles of 13.1±1°, 27.8±1°, 38.4±1°, 49.3±1°, and 64.7±1°. The preparation method of the gallium-containing pseudoboehmite includes the steps of preparing a gallium-aluminum alloy solution, reacting the gallium-aluminum alloy solution with hot water, and separating the gallium-containing pseudoboehmite. In the gallium oxide-alumina composite, the gallium content, based on oxides, is 0.1 wt%–12.0 wt%, the alumina to gallium oxide mass ratio is 7–1000, the pore volume is 0.35–1.20 mL / g, and the specific surface area is 180–500 m². 2 / g, with a most probable pore size of 4.0-10.0 nm. The gallium-containing pseudoboehmite and gallium oxide-alumina composite obtained by this invention are almost free of impurity elements, have large pore volume and specific surface area, and do not generate wastewater discharge during the preparation process, making the operation simple.