2075 results about "Gallium nitride" patented technology

The invention relates to the technical field of power adapter temperature management, and discloses a gallium nitride power adapter temperature management system comprising a dynamic thermal model module used for accurately predicting the temperature change trend of each key component; the multi-level temperature monitoring network module is used for forming a complete temperature distribution diagram; the multi-device collaborative sensing module is used for generating a sensing result of the whole heat dissipation environment; the self-adaptive air duct structure module is used for optimizing an air flow path; the heat dissipation path module based on swarm intelligence is used for calculating and generating an optimal multi-device collaborative heat dissipation path by applying a swarm intelligence algorithm; the self-adaptive heat dissipation control strategy module is used for realizing multi-target balance optimization of temperature, noise and energy consumption; the problem that heat dissipation is difficult when multiple adapters are used in a centralized mode is solved, heat dissipation efficiency is improved, energy consumption is reduced, and noise is reduced.

The invention relates to the technical field of electronic information, in particular to a multi-band cooperative interference gallium nitride phased-array antenna control method and system. The method comprises the steps of extracting key parameters of electromagnetic signals, and generating a cooperative interference strategy combination; mapping the frequency band optimization weight to a dynamic working mode of the gallium nitride power amplifier unit, adjusting the radiation pattern characteristics of the reconfigurable dipole array according to the power distribution parameters, and constructing a composite beam forming framework; phase weighting and spatial multiplexing are carried out on the interference signals of all the frequency bands based on the composite beam forming architecture, and a multi-beam interference cluster is generated; thermodynamic state data of the gallium nitride power amplifier module in the multi-beam interference cluster generation process are collected in real time, and heat dissipation parameters of the liquid cooling system are regulated and controlled according to the thermodynamic state data. Intelligent collaboration and accurate pointing of multi-band interference signals are realized, the interference coverage range and the energy utilization rate are improved, and an efficient interference system integrating electromagnetic sensing, multi-beam collaboration and thermal management is formed.

The present invention relates to a reaction chamber comprising a removable reaction unit and a susceptive casing. The present invention further relates to a reactor incorporating said reaction chamber, and to an assembly comprising said reactor. Additionally, the present invention relates to a method adapted to reduce the preventive maintenance times of the reactor hereinbefore described, and to the use of said reactor in the homoepitaxial or heteroepitaxial deposition of silicon carbide or gallium nitride films on a semiconductor substrate.

The invention belongs to the field of driving circuits of gallium nitride (GaN) power devices in motor driving or power electronic conversion, and discloses a design method of a three-level active driving circuit for restraining bridge arm crosstalk of a GaN device, and the method comprises the steps that a circuit is connected in a bridge type topological structure, and the bridge type topological structure comprises an upper bridge arm and a lower bridge arm which are the same in structure; the upper bridge arm and the lower bridge arm are both divided into two parts, namely a traditional driving circuit and an auxiliary circuit, and the auxiliary circuit is divided into a negative voltage self-recovery circuit and a crosstalk suppression circuit. According to the invention, a negative voltage self-recovery circuit and a crosstalk suppression circuit are formed by using the output and reverse conduction characteristics of the charge pump and the auxiliary GaN device. The advantages of the two methods are combined, the defects of a traditional method are effectively overcome, the turn-off speed is increased, the turn-off loss is reduced, and the positive and negative crosstalk is reduced while the turn-on speed is hardly influenced and the reverse turn-on loss is not additionally increased. The overall design is flexible, efficient and reliable.

The invention relates to the technical field of chip encryption, in particular to an E-type effect amplifier electromagnetic heating method and system based on gallium nitride. The real-time resistance correction value is calculated by acquiring the real-time resistance data and the real-time temperature data and combining the working characteristic information and the ideal parameter information of the gallium nitride device, so that the temperature change of the gallium nitride device can be quickly responded, and then the resistance division subset and the temperature division subset are respectively acquired; a plurality of temperature-resistance correlation groups are obtained after permutation and combination, a data basis is provided for establishing a working voltage prediction model, then the working voltage prediction model is trained through historical data, and finally a real-time resistance correction value and a real-time temperature value are input into the corresponding working voltage prediction model to obtain a working voltage simulation value. And a circuit where the gallium nitride device is located is adjusted according to the working voltage analog value, so that the working voltage and the working current of the gallium nitride device are close to ideal values, and stable power output of the device is ensured.

The invention provides a gallium nitride radio frequency device defect detection method and system based on deep learning, and relates to the technical field of gallium nitride devices, and the method comprises the steps: generating and preprocessing a multispectral image data set; performing channel and space two-dimensional attention calculation, and performing feature optimization in combination with deformable convolution and residual connection; constructing a multi-scale feature pyramid, and constructing a multi-level classification tree based on feature similarity to perform fine-grained defect classification; and utilizing the deep neural network model to evaluate the influence degree of the defect on the device performance. According to the method, the defect position and type of the gallium nitride radio frequency device can be accurately identified, the performance influence of the defect is quantitatively evaluated, and the detection precision and efficiency are improved.

The invention relates to the technical field of thermal management of power adapters, and discloses a multi-mode power management method and device of a gallium nitride adapter. The multi-mode power management method of the gallium nitride adapter comprises the following steps: dividing the interior of the adapter into a plurality of cooling priority regions according to the thermal sensitivity of elements, and integrating a three-dimensional layered micro-channel structure; monitoring the temperature of each area and the state of a cooling system in real time; constructing a self-adaptive flow distribution algorithm, and dynamically adjusting the flow distribution of the cooling liquid according to the real-time temperature state of each region; the maximum allowable power under the current cooling capacity is calculated, and power parameters are dynamically adjusted; dynamically switching the working mode of the adapter; through the synergistic effect of the regional differentiation micro-channel cooling structure and multi-mode power management, the technical effects that the temperature management effect is improved, the reliability is improved, the service life is prolonged, and the power output capacity is enhanced are achieved.

This disclosure is directed toward a method for producing a solid-state battery layer structure. The method may include providing an anode layer comprising silicon, forming a plurality of nanowire structures including silicon and / or gallium nitride on the anode layer and depositing a solid electrolyte layer on the anode layer. In some examples, the method may also include depositing a cathode layer on the solid electrolyte layer, depositing a cathode current collector metal layer on the cathode layer, etching holes through the anode layer, filling the holes with an electrically conducting material; and depositing an anode current collector metal layer on a bottom surface of the anode layer.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a dielectric layer formed over a lower n-type gallium nitride (n-GaN) layer. A first aperture and a second aperture are formed through the dielectric layer and extending to the lower n-GaN layer, the second aperture being narrower than the first aperture. A mesa is formed within the first aperture by successively forming a mesa n-GaN layer, a mesa MQW layer above the mesa n-GaN layer, and a mesa p-GaN layer above the mesa MQW layer. A pyramid having sidewalls is formed within the second aperture by successively forming a pyramidal n-GaN layer, a pyramidal MQW layer, and a pyramidal p-GaN layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer form a mesa LED. The pyramidal n-GaN layer, pyramidal MQW layer, and pyramidal p-GaN layer form a pyramid LED.

A shield trench power device such as a trench MOSFET or IGBT includes a substrate or an epitaxial layer of silicon, silicon carbide, gallium nitride, or gallium arsenide and employs an in-trench structure including a gate structure and an underlying polysilicon or oxide shield region that contacts a shield region in an epitaxial or crystalline layer of the device. The poly silicon region may be laterally confined by spacers in a gate trench and may contact or be isolated from the underlying shield region. Alternatively, the polysilicon region may be replaced with an insulating region.

The invention relates to the technical field of antennas, in particular to a multi-level intelligent overheating protection system and method based on a gallium nitride module antenna. According to the method, a thermal load optimal migration path is analyzed based on a virtual thermal capacity network model, and an input impedance matching network of a target unit is synchronously tuned according to the thermal load optimal migration path to compensate beam phase distortion caused by thermal migration; and according to the boundary constraint condition of the real-time threat scene feature injection virtual thermal capacity network model, dynamically solving a game equilibrium solution of a thermal load migration path and a beam parameter tuning amount, and generating a thermal-radio frequency combined control instruction set. According to the method, full-process closed-loop control from thermal inertia characteristic analysis, thermal network modeling to thermal-radio frequency collaborative optimization is realized, so that the gallium nitride antenna system can intelligently plan an optimal thermal migration path and compensate thermally induced performance distortion in real time in a complex thermal environment and a threat scene, and finally dual optimization of heat dissipation efficiency and radio frequency indexes is achieved.

An electronic component. The electronic component includes a base; a first semiconductor device attached to the base and having: a first Gallium nitride (GaN)-based switch having a first gate, a first source and a first drain, the first gate arranged to control a current flow between the first source and the first drain; a second GaN-based switch having a second source, a second gate and a second drain, the second gate coupled to the first gate, and the second drain coupled to the first drain. In one aspect, the electronic component also includes a second semiconductor device attached to the base and having: a logic circuit coupled to the second source and arranged to detect a magnitude of the current flow; and a driver circuit coupled to the first and second gates, the driver circuit arranged to control on and off states of the first and second GaN-based switches.

The present invention belongs to the technical field of ceramic material preparation methods, and specifically relates to a lead-free piezoelectric ceramic, its preparation method, and application. The lead-free piezoelectric ceramic is a KNN-based lead-free piezoelectric ceramic or a BT-based lead-free piezoelectric ceramic having a perovskite structure; the KNN-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with potassium sodium niobate (KNN) ceramic as the matrix, and the chemical formula is 0.955 (K 0.48 Na 0.52 )Nb 0.98 Sb 0.02 O3‒0.045Bi 0.5 Na 0.5 ZrO3‒0.75mol% GaN; The BT-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with barium nitride (BT) as the matrix, and the chemical formula is (Ba 0.85 Ca 0.15 )(Ti 0.9 Zr 0.1 ) O‒1.75mol% GaN; the lead-free piezoelectric ceramic has a dense structure, is lead-free, and exhibits excellent electrochemical properties. The preparation method for the lead-free piezoelectric ceramic is simple, low-cost, pollution-free, and utilizes readily available raw materials. The lead-free piezoelectric ceramic can be used to prepare energy harvesters and has significant application value.

The invention provides a silicon-based gallium nitride material epitaxial structure based on a silicon substrate, and relates to the technical field of semiconductors. Comprising a silicon substrate, an AlN nucleating layer, a buffer layer, a GaN functional layer and a device layer which are sequentially laminated, wherein the thickness of the AlN nucleating layer is related to the geometrical shape and the geometrical size of the silicon substrate; the buffer layer comprises a stepped AlGaN sub-buffer layer and a semi-insulating GaN sub-buffer layer; the step-level AlGaN sub-buffer layer comprises a plurality of step-level AlGaN sub-buffer layers, and the sub-buffer layer attribute of each step-level AlGaN sub-buffer layer is related to the thermal stress constraint of the step-level AlGaN sub-buffer layer; the stepped AlGaN sub-buffer layer and the semi-insulating GaN sub-buffer layer are respectively in contact with the AlN nucleating layer and the GaN functional layer; and the semi-insulating GaN sub-buffer layer has a semi-insulating GaN sub-buffer layer thickness which is optimized based on an electric breakdown theory and thermal stress balance collaboratively.

A power integrated circuit comprising: a heterojunction structure Gallium Nitride, GaN, chip comprising at least one GaN layer and at least one Aluminium Gallium Nitride, AlGaN, layer wherein the GaN chip comprises at least one main power device comprising a source terminal, a drain terminal, a gate terminal and a two-dimensional electron gas, 2DEG, formed at an interface between the AlGaN and GaN layers and between the source and drain terminals, wherein the gate terminal is configured to modulate at least a portion of the 2DEG when a charge is applied to the gate terminal, a driver comprising at least one low-side component and at least one high-side component, wherein the low-side component comprises a terminal connected to a low DC voltage rail and at least one other terminal connected to the gate terminal of the main power device; wherein the high-side component comprises at least one terminal connected to a high DC voltage rail and at least one other terminal connected to the gate of the main power device; wherein the at least one low-side component of the driver is configured to discharge an input capacitance of the main power device during a turn-off of the main power device and is monolithically integrated within the GaN chip; and wherein the at least one high-side component of the driver is configured to charge up the input capacitance of the main power device and is formed in a semiconductor region comprising a material other than GaN.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

The present invention discloses an irradiation-resistant GaN HEMT with decoupling reverse conduction capability and a fabricating method thereof. First gate region metal and second gate region metal are sectionally distributed on a p-type gallium nitride layer in a gate region of the transistor, where the first gate region metal consists of first Schottky metal layers and second ohmic metal layers, and the second gate region metal only consists of a second Schottky metal layer; dielectric layers are filled between the first gate region metal and the second gate region metal, an interconnection metal layer is arranged above the first gate region metal and is connected to an interconnection metal layer above a source to form a reverse freewheeling diode; and gate metal layers are arranged above the second gate region metal and are used as a real gate of the transistor.

An enhancement mode gallium nitride (GaN) transistor configured to eliminate holes in the gate material under the gate metal. The transistor has four electrodes, namely a drain electrode, a source electrode, a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes in the gate material under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially eliminating the holes.

The invention relates to an enhanced gallium nitride device based on lamination passivation and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The device sequentially comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlN insertion layer and an AlGaN barrier layer from bottom to top, a P-GaN cap layer is arranged on the upper side of the AlGaN barrier layer, passivation layers are arranged on the portions, on the two sides of the P-GaN cap layer, of the AlGaN barrier layer, source electrode metal and drain electrode metal are arranged on the two sides of each passivation layer respectively, the source electrode metal and the drain electrode metal extend to the GaN buffer layer, and grid electrode metal is arranged on the upper side of the P-GaN cap layer. According to the invention, the interface quality of the device is obviously improved, the surface trap effect and hot carrier injection are inhibited, the thermal stress mismatch is relieved, and the overall electrical performance and reliability of the device are improved.

The invention discloses a gallium nitride power adapter and a use method thereof, and relates to the technical field of power adapters, the gallium nitride power adapter comprises an adapter body, the adapter body comprises an equipment body, the bottom of the equipment body is fixedly provided with a plug, and the top of the equipment body is provided with a plug wire hole; according to the invention, through the cooperative use of the protection unit and the vacuum unit, the purpose of ensuring the anti-oxidation effect can be achieved, so that the metal surface of the plug can be covered by the telescopic protection sleeve after the adapter is used and pulled out every time, and the metal surface is ensured to be completely isolated from the outside. And meanwhile, a vacuum effect is applied to the interior of the telescopic protective sleeve, so that the oxidation phenomenon of the metal surface of the plug can be effectively slowed down, the influence on the conductive effect caused by the increase of the contact resistance of the metal surface is avoided, and the subsequent internal current conversion effect can be ensured not to be influenced.

The invention provides a method for growing gallium nitride on graphene based on a patterned silicon substrate. The method comprises the following steps: S1, selecting the patterned silicon substrate with a concave pattern; s2, directly growing a plurality of layers of graphene films on the patterned silicon substrate by using a chemical vapor deposition method; s3, growing a gallium nitride thin film on the patterned silicon substrate on which the graphene thin film is grown through a metal organic chemical vapor deposition method; s4, the graphene layer is arranged between the patterned silicon substrate and the gallium nitride thin film to serve as a buffer layer for gallium nitride growth, the gallium nitride thin film is grown through a high-low-temperature gallium nitride growth technology, that is, the temperature of the reaction chamber is increased to the temperature needed by low-temperature gallium nitride growth in the vacuum environment, the quality of graphene is improved, and the yield of the gallium nitride thin film is increased. In addition, due to the synergistic effect of the graphene layer and the patterned silicon substrate, the dislocation density of the gallium nitride epitaxial layer can be more effectively reduced, the quality of the epitaxial layer is improved, and the reliability of a gallium nitride device is enhanced.

The invention relates to a single-stage PFC gallium nitride power supply non-inductive power distribution method and system, and the method comprises the following steps: a main control chip of a gallium nitride power supply monitors the states of a plurality of charging interfaces, and builds communication with a load and obtains the charging parameter information of the load when there is a charging interface connected with the load; if the acquisition fails, adopting a set detection charging strategy to charge the load, and monitoring a temperature change curve of the charging interface; the main control chip predicts an output power value range when the charging interface reaches a set safe charging range according to the fed-back temperature change curve; matching a set charging strategy according to the obtained output power value range; by applying the method, the method is not only suitable for loads capable of obtaining the charging parameters through communication, but also suitable for most loads incapable of obtaining the charging parameters through communication, load charging power distribution can be carried out according to the priority, adaptability is better, and charging is more scientific and efficient.

The invention relates to the technical field of power electronic conversion, and discloses a high-efficiency rectification conversion system and a control method thereof, and the system comprises the following modules: a detection module, an input compatible module, a hybrid power device module, a control module, a thermal management module and a frequency modulation module. The control method comprises the following steps: acquiring input power grid voltage, output current and load state parameters; calculating an input voltage phase difference; dynamically selecting the type and channel configuration of the silicon carbide or gallium nitride power device according to the load rate; outputting a device configuration instruction and a switching frequency control instruction; adjusting the cooling system through the evaluated thermal state of the conversion system; and the control module receives the control instruction output by the control module and is used for implementing a corresponding pulse width modulation strategy. According to the method, a multi-system power grid identification and self-adaptive topology switching strategy is adopted, the technical effect of automatically configuring the optimal rectification architecture under different input types is achieved, and the problems of response delay and poor compatibility of the method in the environment of variable power grid types are solved.

The invention relates to the technical field of partial discharge detection, in particular to an ultraviolet partial discharge detection method and device, a storage medium and an ultraviolet sensor, the ultraviolet partial discharge detection method is applied to a gallium nitride ultraviolet sensor, and the ultraviolet partial discharge detection method comprises the following steps: acquiring an initial ultraviolet detection signal and an environmental parameter detection signal, preprocessing the initial ultraviolet detection signal and the environmental parameter detection signal to obtain an actual ultraviolet detection signal and a drift compensation value; when it is determined that the gallium nitride ultraviolet sensor is in a real partial discharge state according to the actual ultraviolet detection signal, compensating the actual ultraviolet detection signal according to the drift compensation value; and acquiring the real ultraviolet partial discharge intensity corresponding to the initial ultraviolet detection signal according to the compensated actual ultraviolet detection signal. Therefore, the detection precision and stability of the ultraviolet signal can be improved, excessive deviation of a detection result caused by interference of environmental factors is avoided, and the occurrence frequency of false alarms is remarkably reduced.

The invention provides a gallium nitride device-oriented three-dimensional electromagnetic-thermal co-simulation method, which relates to the technical field of gallium nitride devices, and comprises the steps of generating a training sample set by collecting device parameters, obtaining electromagnetic field and temperature field feature vectors to establish a control equation set, carrying out grid division by adopting a self-adaptive hierarchical subdivision method, and obtaining a three-dimensional electromagnetic-thermal co-simulation result. Grid density distribution is determined based on the temperature gradient and the material interface characteristics, and a multi-level grid structure is generated; solving the electromagnetic field equation to obtain loss power density, and establishing a temperature field heat source item to calculate temperature distribution; and judging the thermal stability state according to the temperature change rate, updating the material parameters and optimizing the grid structure. According to the method, high-precision simulation of electromagnetic-thermal coupling analysis is realized, and the calculation efficiency is improved.

The invention provides a fault detection method and system for a gallium nitride power device, and relates to the technical field of fault detection, and the method comprises the steps: determining the safe operation parameters of the gallium nitride power device under a preset working condition according to the rated electrical parameters, chip structure parameters and packaging characteristics of the gallium nitride power device; extracting state response characteristics of the gallium nitride power device under a preset working condition; constructing a fault evidence matrix of the gallium nitride power device under a preset working condition based on the safe operation parameters and the state response characteristics; and performing fault state evaluation on the gallium nitride power device according to the fault evidence matrix to obtain a fault state factor of the gallium nitride power device, and further determining the fault probability of grid degradation of the gallium nitride power device based on the fault state factor. According to the scheme, the operation safety and the state response of the gallium nitride power device under the high-frequency switching working condition can be comprehensively analyzed, so that the evaluation accuracy of the device fault state is improved.

The present disclosure provides a semiconductor device, which includes a control circuit, a driving circuit, a voltage pull-up device, and a discharging circuit. The control circuit is coupled between a first terminal and a second terminal of the integrated circuit, and provides a first voltage at a first node. The driving circuit is electrically connected to the control circuit at the first node, and provides a trigger signal at a second node in response to an electrostatic discharge (ESD) event occurring at the first terminal or the second terminal. The voltage pull-up device is coupled between the first terminal and the first node, and configured to pull up the first voltage at the first node in response to the ESD event occurring at the first terminal. The discharging circuit is electrically connected to the second node, and coupled between the first terminal and the second terminal.

The invention provides a gallium nitride radio frequency device multi-physics field coupling modeling and verification method and system, and relates to the technical field of modeling, and the method comprises the steps: carrying out the dynamic coupling calculation of physical parameters of a device through a temperature variation iterative algorithm, and building an electrothermal coupling field distribution function; constructing a self-adaptive iterative calculation equation to calculate high-frequency working state physical characteristic parameters; performing discretization processing by adopting a finite element method to obtain field distribution parameters; and correcting the coupling prediction equation based on the measured parameters of the low-frequency working state. According to the method, the model precision can be improved, and the calculation complexity of the gallium nitride radio frequency device model is reduced.

The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.

The embodiment of the invention provides a gallium nitride totem-pole circuit and a control evaluation system of the gallium nitride totem-pole circuit, and the circuit comprises a gallium nitride power device which comprises an integrated semiconductor tube and an integrated drive circuit; the isolation chip is connected between the control module and an integrated driving circuit of the gallium nitride power device and is used for sending the pulse width modulation signal sent by the control module to the integrated driving circuit, and the isolation chip can ensure the electrical safety of weak current and strong current; the gallium nitride power device is used for controlling the on-off state of the integrated semiconductor tube through the integrated driving circuit according to the pulse width modulation signal sent by the isolation chip; under the condition that the integrated semiconductor tube is conducted, the voltage is output to the control module based on the bus voltage through the integrated semiconductor tube, and the driving circuit is integrated on the gallium nitride power device, so that the circuit design can be simplified, overcurrent protection and undervoltage protection are simultaneously carried out, and the safety of the gallium nitride totem pole circuit is improved.