1072 results about "Gallium nitride" patented technology

The embodiment of the invention provides a gallium nitride totem-pole circuit and a control evaluation system of the gallium nitride totem-pole circuit, and the circuit comprises a gallium nitride power device which comprises an integrated semiconductor tube and an integrated drive circuit; the isolation chip is connected between the control module and an integrated driving circuit of the gallium nitride power device and is used for sending the pulse width modulation signal sent by the control module to the integrated driving circuit, and the isolation chip can ensure the electrical safety of weak current and strong current; the gallium nitride power device is used for controlling the on-off state of the integrated semiconductor tube through the integrated driving circuit according to the pulse width modulation signal sent by the isolation chip; under the condition that the integrated semiconductor tube is conducted, the voltage is output to the control module based on the bus voltage through the integrated semiconductor tube, and the driving circuit is integrated on the gallium nitride power device, so that the circuit design can be simplified, overcurrent protection and undervoltage protection are simultaneously carried out, and the safety of the gallium nitride totem pole circuit is improved.

The invention relates to the technical field of gallium nitride transistors, and discloses a silicon carbide-gallium nitride heterogeneous integrated high-voltage power device structure, which comprises a silicon carbide device consisting of a plurality of parallel MOS (Metal Oxide Semiconductor) cells and a gallium nitride device consisting of two GaN structures, and is characterized in that the gallium nitride device is positioned on the back surface of the silicon carbide device; each MOS cell comprises a semiconductor epitaxial layer, an MOS source electrode, an MOS grid electrode and an MOS dielectric layer covering the surface of the MOS grid electrode; wherein the semiconductor epitaxial layer comprises an N substrate layer and an N diffusion layer from top to bottom. The transverse high electron mobility characteristic of the GaN HEMT and the longitudinal voltage withstanding advantage of the SiC MOSFET are combined, cooperative work of two wide bandgap semiconductors is achieved on a single substrate, the structure effectively utilizes the excellent heat conduction and voltage withstanding performance of the SiC substrate as a common carrier, meanwhile, through the series voltage withstanding design of the device level, the performance of the device level is improved, and the performance of the device level is improved. And the overall breakdown voltage is obviously improved.

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

The invention discloses a reinforced p-GaN enhanced gallium nitride device resistant to single-particle burnout and a preparation method thereof, and mainly solves the problems that a gallium nitride device is prone to single-particle burnout in a space radiation environment and is insufficient in reliability. Comprising a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a p-GaN cap layer which are sequentially grown on the substrate, a grid electrode formed by etching, and a mixed source electrode and a mixed drain electrode which are respectively formed by a plurality of deep embedded electrode regions and a plurality of surface contact electrode regions which are alternately arranged and are positioned on two sides of the grid electrode, wherein the deep embedded electrode region comprises a deep embedded source electrode and a deep embedded drain electrode and penetrates through the barrier layer and the channel layer, and the bottom of the deep embedded electrode region is in metal contact with the buffer layer; the surface contact electrode region comprises a conventional source electrode and a conventional drain electrode, and the bottom of the surface contact electrode region is in metal contact with the barrier layer or the channel layer. Accumulation of carriers in a channel region can be effectively inhibited, the single-particle burning resistance of the device is remarkably improved, and the performance of the device is improved.

The invention provides a mining gallium nitride gas sensor which comprises a main box body, a gas inlet cover is arranged on the bottom face of the main box body, and a PLC main board loaded with a gallium nitride chip is installed in the main box body; the gas detector comprises a shell column, and the shell column is installed in the middle of the bottom face of the main box body and located in the gas inlet cover; an inner blowback part for cleaning the filtering part is arranged in the connecting screw pipe, and an outer blowback part for cleaning the air inlet cover is arranged outside the shell column; identification assemblies are symmetrically arranged on the two sides of the main box body; the identification assemblies rotating upwards are contained on the two sides of the main box body so as to identify the gas detection position. The identification assembly rotating downwards encloses the outer part of the air inlet cover so as to carry out closed calibration and maintenance identification; and a hoisting mechanism. The surface of the air inlet cover and the interior of the filtering part can be synchronously cleaned, and dust and impurities are thoroughly removed; the closed calibration area is formed through automatic butt joint of the side enclosure cover, and a temporary closed environment does not need to be built manually.

The invention provides an anti-radiation high-performance enhanced gallium nitride-based power device and a manufacturing method thereof, and belongs to the technical field of semiconductors. On the basis of a traditional enhanced P-GaN HEMT device structure, a P-type InaGa1-aN back barrier layer, an InbGa1-bN / GaN superlattice layer, a composite gate structure composed of a dielectric layer and a gate Schottky metal layer and a gradient-changing island-shaped P-GaN layer are innovatively introduced, and a pair of composite problems of dynamic resistance instability and radiation sensitivity are cooperatively solved. The device not only maintains the normally-off characteristic and the high threshold voltage of an enhanced device, but also remarkably improves the anti-irradiation capability, the breakdown voltage and the dynamic resistance stability, and is particularly suitable for power electronics in strong irradiation environments such as aerospace and nuclear energy detection.

The invention relates to the technical field of power electronics, in particular to a multi-environment aging detection and evaluation method and system for an electrical device. A multi-environment aging detection and evaluation method for an electrical device comprises the following steps: S1, collecting environmental factor data and personnel activity data of a gallium nitride power device in various application scenes, and generating a test environmental stress sequence according to the environmental factor data and the personnel activity data; s2, testing the gallium nitride power device according to the test environment stress sequence, and monitoring aging parameters of the gallium nitride power device in real time; and S3, generating an aging feature vector based on the aging parameters, and judging an aging mechanism and confidence according to the aging feature vector and an aging mechanism judgment model. The aging mechanism of the device in different application scenes is judged by simulating environmental factors and personnel activity data of different application scenes, and decision support is provided for technicians engaged in device design and maintenance.

A temperature sensor circuit includes a gallium nitride (GaN) integrated circuit (IC) die including a temperature sensitive two-dimensional electron gas (2DEG) resistive circuit element that includes a 2DEG channel; and a sensing circuit included to sense resistance of the temperature sensitive 2DEG resistive circuit element.

The invention provides an enhanced gallium nitride high-electron-mobility transistor. The enhanced gallium nitride high-electron-mobility transistor comprises a substrate; the first epitaxial structure is formed on the substrate, and the first epitaxial structure comprises a channel layer and a barrier layer formed on the channel layer; the passivation layer is formed on the first epitaxial structure; the grid electrode comprises a groove, and the groove penetrates through the passivation layer and the barrier layer and extends into the channel layer; the second epitaxial structure part covers the bottom and the side wall of the groove and the upper surface of the passivation layer on the left side and the right side of the top of the groove; and a gate electrode formed on the second epitaxial structure portion. The groove gate enhanced MIS-HEMT device has the beneficial effects that the uniformity, the process repeatability, the robustness and the reliability of the threshold voltage of the groove gate enhanced MIS-HEMT device are improved.

The present disclosure provides a semiconductor device, which includes a control circuit, a driving circuit, a voltage pull-up device, and a discharging circuit. The control circuit is coupled between a first terminal and a second terminal of the integrated circuit, and provides a first voltage at a first node. The driving circuit is electrically connected to the control circuit at the first node, and provides a trigger signal at a second node in response to an electrostatic discharge (ESD) event occurring at the first terminal or the second terminal. The voltage pull-up device is coupled between the first terminal and the first node, and configured to pull up the first voltage at the first node in response to the ESD event occurring at the first terminal. The discharging circuit is electrically connected to the second node, and coupled between the first terminal and the second terminal.

The invention relates to a method for depositing a layer of elements of main group III and V on a SiC surface of a silicon substrate in a process chamber (2) of a CVD reactor, wherein the SiC surface is formed by a first chemical reaction between a first gaseous starting material comprising carbon and the surface of the Si substrate at a first elevated temperature of the substrate (6), and the layer is formed by a second chemical reaction between a second gaseous starting material comprising an element of main group III and a third gaseous starting material comprising an element of main group V at a second elevated temperature.

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention provides a light emitting diode and a light emitting device. The light-emitting diode comprises an isolation table top and a light-emitting area table top, the isolation table top is arranged around the light-emitting area table top, and an interval area is arranged between the isolation table top and the light-emitting area table top. A light-absorbing material layer is arranged below the light-emitting area table top, and the outer edge of the light-absorbing material layer is located in the area corresponding to the interval area. The outer edge of the light absorption material layer is arranged in the area corresponding to the interval area, stray light or reflected light generated in the process can be absorbed, the photoetching pattern precision of the interval area is improved, the problem that gallium nitride is left due to the fact that photoresist covers gallium nitride is solved, a potential leakage current path between the isolation table top and the light emitting area table top is cut off, and the light emitting efficiency is improved. The leakage current of the light-emitting diode is reduced, and the working stability and reliability of the light-emitting diode are improved.

A method of fabricating a semiconductor device includes providing a GaN substrate with an epitaxial layer formed thereover, the epitaxial layer forming a heterojunction with the GaN substrate, the heterojunction supporting a 2-dimensional electron gas (2DEG) channel in the GaN substrate. A composite surface passivation layer is formed over a top surface of the epitaxial layer, wherein the composite surface passivation layer comprises a first passivation layer portion formed proximate to a first region of the GaN device and a second passivation layer portion formed proximate to a second region of the GaN device. The first and second passivation layer portions are disposed laterally adjacent to each other over the epitaxial layer, wherein the first passivation layer portion is formed in a first process and the second passivation layer portion is formed in a second process.

The invention relates to the technical field of power electronics, in particular to a portable load adaptive bidirectional charging and discharging circuit module. The module comprises a battery and a load port. The first half-bridge is composed of a gallium nitride switch, and the second half-bridge is composed of a silicon-based field effect transistor; a main winding of the coupling inductor is connected with two half-bridge switch nodes, and a secondary winding outputs induced voltage to provide bias power supply through rectification and filtering; an auxiliary resonant branch comprising an auxiliary switch and a resonant capacitor is connected in parallel to two ends of the switch, and the starting time sequence of the auxiliary switch is ahead of the first gallium nitride switch; the control unit determines a direct current and a high-frequency ripple component according to the shunt resistor and the secondary winding signal, and generates a PWM signal in combination with the port voltage to control the on and off of all the switches. According to the scheme of the invention, self-bias power supply and high-precision composite current detection are realized, the switching loss is reduced, and the energy conversion efficiency is improved.

The invention relates to the technical field of switching power supplies, and discloses a gallium nitride charger based on a 494 PWM chip, which comprises a power panel, a rectification circuit module, a half-bridge gallium nitride driving module, a transformer, a 494 chip control module, a totem pole driving module, an isolation driving transformer, a full-wave rectification module, a filter circuit module and a conversion circuit module, the core is that the 494 chip control module generates a PWM signal, and the PWM signal sequentially passes through the totem pole driving module for current amplification and the isolation driving transformer for electrical isolation and signal coupling to drive the two gallium nitride transistors in the half-bridge topology for high-frequency alternate switching. According to the invention, the high-speed switching characteristic of the gallium nitride device is fully exerted, and the charger can work at a higher frequency, thereby reducing the switching loss, reducing the size of a magnetic element, and achieving the high power density and high overall conversion efficiency while improving the power level to a kilowatt level.

The invention discloses an ultraviolet partial discharge detection and prediction method and system based on a gallium nitride sensor, and relates to the technical field of semiconductor firmware production and detection. The system comprises a detection system body, and the detection system body comprises an intelligent sensing acquisition module, a signal conditioning and noise reduction module, a multi-dimensional feature extraction module, a mode recognition and classification module, a data management trend prediction module and a decision output man-machine interaction module. According to the invention, high-quality acquisition and conversion are carried out on ultraviolet sub-signals through the intelligent sensing acquisition module, the signal conditioning and noise reduction module adopts adaptive filtering and background noise deduction technologies to effectively suppress environmental radiation and electromagnetic interference, and the multi-dimensional feature extraction module comprehensively extracts signal features from a time domain, a frequency domain and a time domain. The mode identification and classification module utilizes a machine learning algorithm to distinguish real partial discharge and noise pulses, so that the detection accuracy is improved, and the defects of high false alarm rate and low signal-to-noise ratio caused by noise interference of a traditional system are overcome.

To provide a liquid dispensing device that can increase the frequency of the drive signal. [Solution] A capacitive load drive circuit that outputs a drive signal to displace a capacitive load comprises a first gate drive circuit that outputs a first gate drive signal corresponding to a modulation signal output by a modulation circuit, a second gate drive circuit that outputs a second gate drive signal corresponding to the modulation signal, an amplification circuit that outputs an amplified modulation signal by driving a first transistor driven according to the first gate drive signal and a second transistor driven according to the second gate drive signal, and a demodulation circuit that outputs a drive signal obtained by demodulating the amplified modulation signal, wherein the first transistor and the second transistor contain gallium nitride, the first gate drive circuit and the first transistor are housed in one package to constitute a first semiconductor device, and the second gate drive circuit and the second transistor are housed in one package to constitute a second semiconductor device, in a liquid dispensing device.

The invention discloses a design method of a gallium nitride Hall current sensor, and relates to the technical field of current detection and electric energy metering. The device comprises a magnetic field conversion unit which is configured to convert a measured current into a magnetic field signal which is proportional to the magnitude of the current; and the multi-channel parallel detection unit comprises at least two programmable Hall sensing channels. Through the differential configuration design of the multi-channel parallel detection unit, a closed-loop structure does not need to be introduced, full-range high-precision current measurement can be realized, a small-range sensing channel adapts to a small current interval, the amplitude of an output signal is amplified so as to reduce the zero error proportion, the measurement precision of a rated range interval of 1%-5% is improved, the national standard requirement of electric energy measurement is met, and the electric energy measurement efficiency is improved. The wide-range sensing channel guarantees saturation resistance and linearity of large-current measurement, does not depend on limit performance of a single sensor, improves tolerance of a system to device consistency and zero drift, and reduces a device type selection threshold.

The invention discloses a light-emitting diode chip for improving the polarization effect of a quantum well light-emitting layer and a preparation method of the light-emitting diode chip. Comprising a sapphire patterned substrate, a buffer layer, a defect barrier layer, an N-type gallium nitride layer, a current expansion layer, a stress release layer, a quantum well light-emitting layer, a polarization buffer layer, a P-type electron barrier layer, a P-type gallium nitride layer, a transparent conductive layer, an electrode layer and a protective layer which are sequentially arranged from bottom to top. The polarization buffer layer is arranged between the quantum well light-emitting layer and the P-type electron blocking layer, buffers energy level abrupt change, and improves the polarization effect. A composite structure of an In < x > Ga < 1-x > N / GaN superlattice and a GaN / Al < y > Ga < 1-y > N superlattice is inserted between the multi-quantum well layer and the electron blocking layer, mutation of energy level is buffered by adjusting gradient doping of In and Al, the polarization effect in quantum wells caused by high potential barriers of the electron blocking layer is effectively improved, and the luminous efficiency of the diode is further improved.

The invention provides a light emitting diode and a light emitting device. The light-emitting diode comprises a light-emitting area table top and an isolation table top arranged around the light-emitting area table top, and the minimum distance between the outer edge of the light-emitting area table top and the inner edge of the isolation table top is a first interval. The inner edge of the isolation table top is provided with a first arc-shaped corner, the outer edge of the light-emitting area table top is provided with a second arc-shaped corner, and the minimum distance between the first arc-shaped corner and the second arc-shaped corner is a second interval; the second pitch is at least not less than 15 [mu] m. By limiting the second spacing, effective isolation between the two mesas can be ensured from a physical structure, so that even if gallium nitride residues are generated in the etching process, the gallium nitride residues can be effectively prevented from forming a conductive channel between the isolation mesa and the light-emitting area mesa, the risk of electric leakage is reduced, and the reliability of the device is improved. And the working stability and long-term reliability of the light-emitting diode are improved.

Example embodiments relate to power amplifiers and Doherty amplifiers that include the same. One example embodiment includes a power amplifier. The power amplifier includes one or more radiofrequency (RF) output terminals. The power amplifier also includes a Gallium Nitride (GaN) semiconductor die on which a power field-effect transistor (FET) is integrated. The FET includes a plurality of FET cells that are adjacently arranged in a row. The FET cells are connected either directly or indirectly to the one or more RF output terminals via a respective first inductor. For FET cells arranged at opposing ends of the row of FET cells, a total FET cell gate width and an inductance of the first inductor is larger and smaller than the total FET cell gate width and inductance of the first inductor for one or more FET cells arranged in the middle of the row of FET cells, respectively.

The invention provides a gallium nitride heteroepitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, and an AlN seed layer, an AlGaN transition layer, a dislocation annihilation layer, a GaN high-resistance layer, an undoped GaN layer, a spatial isolation layer, a barrier layer and a cap layer which are sequentially arranged on the substrate. According to the invention, the voltage withstanding performance and the crystal quality of the gallium nitride heteroepitaxial structure can be improved.

A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.

The embodiment of the invention provides a gallium nitride device, a preparation method and a chip. The gallium nitride device comprises an epitaxial layer, a source electrode, a drain electrode and a grid electrode, the drain electrode and the epitaxial layer form Schottky contact and ohmic contact distributed at intervals in an array mode, the electric field distribution on one side of the drain electrode is improved, the output capacitance of the gallium nitride device is reduced, the breakdown voltage and the frequency gain characteristic of the gallium nitride device are improved, and therefore the gallium nitride device is suitable for a broadband power amplifier and a higher frequency range. The problem that a scheme for improving the breakdown voltage of a device from the perspective of reducing electric leakage or modulating electric field distribution in the prior art is not suitable for a communication system of a high-frequency end is solved.

To provide a liquid dispensing device that can increase the frequency of the drive signal. [Solution] A capacitive load drive circuit that outputs a drive signal to displace a capacitive load comprises a gate drive circuit that outputs a first gate drive signal corresponding to a modulation signal output by a modulation circuit and a second gate drive signal corresponding to the modulation signal, an amplification circuit that outputs an amplified modulation signal by driving a first transistor driven in accordance with the first gate drive signal and a second transistor driven in accordance with the second gate drive signal, and a demodulation circuit that outputs a drive signal obtained by demodulating the amplified modulation signal, wherein the first transistor and the second transistor contain gallium nitride, and the gate drive circuit, the first transistor and the second transistor are housed in a single package, constituting a semiconductor device, in a liquid dispensing device.

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention provides an epitaxial structure of a gallium nitride HEMT (High Electron Mobility Transistor) device. An in-situ nitride layer; a first high carbon concentration layer, wherein the carbon concentration of the first high carbon concentration layer is greater than 1018 cm <-3 >; a low-carbon-concentration channel layer, wherein the carbon concentration of the low-carbon-concentration channel layer is less than 1018 cm <-3 >; and a barrier layer. According to the embodiment of the invention, the existence of the in-situ nitride layer can prevent the dislocation of the bottom layer of the epitaxial structure from continuously extending upwards, and also can promote the turning annihilation of the dislocation. The channel layer is grown after the smooth surface is formed through combination, so that the smooth surface of the epitaxial structure can be obtained without a very thick channel layer, the interface quality of a key layer is further improved, and the performance and the reliability of a gallium nitride high-electron-mobility transistor device manufactured on the basis of the epitaxial structure are further improved.

The invention discloses a pressure stress passivation method, which is applied to a thin barrier gallium nitride millimeter wave device, and is characterized in that a laminated silicon nitride passivation layer with pressure stress is formed on the surface of the device through the synergistic effect of interface passivation and stress engineering, so that device passivation is realized; wherein the laminated silicon nitride passivation layer comprises an interface function layer positioned on the bottom layer and a stress modulation layer positioned on the interface function layer; the method comprises the following steps of: depositing a first layer of silicon nitride film on a barrier layer of the gallium nitride millimeter wave device under the conditions of a high-frequency source and rich silicon to form an interface function layer; and depositing a second layer of silicon nitride film on the interface function layer, and carrying out stress regulation and control in the deposition process to form a stress modulation layer with compression stress. According to the method, current collapse can be effectively suppressed, meanwhile, the breakdown voltage is remarkably improved, and finally the thin-barrier gallium nitride millimeter wave device is enabled, so that the thin-barrier gallium nitride millimeter wave device has excellent performance of high power output and high stability in a high-frequency working mode.