5511 results about "Gallium nitride" patented technology

A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm⁻¹ at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 10⁴ per cm² and an optical absorption coefficient below about 100 cm⁻¹ at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

The present invention is an apparatus for deliverying high purity gallium trichloride in the vapor phase to a gallium nitride reactor, comprising; a source of carrier gas at an elevated pressure; a purifier to remove moisture from the carrier gas; a heater capable of heating the carrier gas to at least 80° C.; a container having a supply of gallium trichloride, a valve controlled inlet for the carrier gas having a dip tube with an outlet below the level of the gallium trichloride, a valve controlled outlet for removing the carrier gas and entrained gallium trichloride; a heater capable of heating sufficient to melt the gallium trichloride; a delivery line connected to the valve controlled outlet for carrying the entrained gallium trichloride to a reaction zone for gallium nitride. A process is also described for the apparatus.

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about −0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10{overscore (1)}1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10{overscore (1)}3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11{overscore (2)}2} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate, and (4) {11{overscore (1)}3} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate

Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.

The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

A light emitting diode comprising a light emitting diode element 20 mounted on a glass epoxy substrate 12, this light emitting diode element 20 being protected at its surface side by a resin seal member 33, in which: a light emitting diode element for blue luminescence, formed of gallium nitride type compound semiconductor is used as the above-mentioned light emitting diode element 20; and a fluorescent material containing layer 21 composed of a fluorescent material containing layer 21 composed of a fluorescent material dispersed into an adhesive is arranged on the back side of this light emitting diode element. On the back side of the light emitting diode element 20, blue luminescence is converted in wavelength to produce white luminescence of high intensity.

A new transparent conducting oxide (TCO), which can be expressed as Al_xGa_3−x−yIn_5+ySn_2−zO_16−2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al₂O₃—Ga₂O₃—In₂O₃—SnO₂ system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.

A method of forming a device structure including a selectively-deposited gallium nitride layer is disclosed.

A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.