3053 results about "Gallium nitride" patented technology

The invention relates to the technical field of power adapter temperature management, and discloses a gallium nitride power adapter temperature management system comprising a dynamic thermal model module used for accurately predicting the temperature change trend of each key component; the multi-level temperature monitoring network module is used for forming a complete temperature distribution diagram; the multi-device collaborative sensing module is used for generating a sensing result of the whole heat dissipation environment; the self-adaptive air duct structure module is used for optimizing an air flow path; the heat dissipation path module based on swarm intelligence is used for calculating and generating an optimal multi-device collaborative heat dissipation path by applying a swarm intelligence algorithm; the self-adaptive heat dissipation control strategy module is used for realizing multi-target balance optimization of temperature, noise and energy consumption; the problem that heat dissipation is difficult when multiple adapters are used in a centralized mode is solved, heat dissipation efficiency is improved, energy consumption is reduced, and noise is reduced.

The invention relates to the technical field of gallium nitride gate drivers, and discloses a design method and system of a gallium nitride gate driver, and the method comprises the steps: carrying out the working signal collection of the gallium nitride gate driver, obtaining original waveform sampling data, and building a signal integrity model under the action of electromagnetic interference; separating the original waveform sampling data into an effective driving signal, a low-frequency interference signal and a high-frequency noise signal, and extracting characteristic parameters to obtain a signal characteristic parameter set; switching time and circuit power consumption are set as optimization variables, constraint conditions are set according to the signal integrity model, and an optimization objective function is obtained; performing online identification and optimization calculation on the driving parameters to obtain a driving control parameter sequence; according to the method, the adaptive capacity of the driver to the change of the working condition is improved, and meanwhile, the stability and the reliability of the driving waveform are ensured.

The invention relates to the technical field of electronic information, in particular to a multi-band cooperative interference gallium nitride phased-array antenna control method and system. The method comprises the steps of extracting key parameters of electromagnetic signals, and generating a cooperative interference strategy combination; mapping the frequency band optimization weight to a dynamic working mode of the gallium nitride power amplifier unit, adjusting the radiation pattern characteristics of the reconfigurable dipole array according to the power distribution parameters, and constructing a composite beam forming framework; phase weighting and spatial multiplexing are carried out on the interference signals of all the frequency bands based on the composite beam forming architecture, and a multi-beam interference cluster is generated; thermodynamic state data of the gallium nitride power amplifier module in the multi-beam interference cluster generation process are collected in real time, and heat dissipation parameters of the liquid cooling system are regulated and controlled according to the thermodynamic state data. Intelligent collaboration and accurate pointing of multi-band interference signals are realized, the interference coverage range and the energy utilization rate are improved, and an efficient interference system integrating electromagnetic sensing, multi-beam collaboration and thermal management is formed.

The present invention relates to a reaction chamber comprising a removable reaction unit and a susceptive casing. The present invention further relates to a reactor incorporating said reaction chamber, and to an assembly comprising said reactor. Additionally, the present invention relates to a method adapted to reduce the preventive maintenance times of the reactor hereinbefore described, and to the use of said reactor in the homoepitaxial or heteroepitaxial deposition of silicon carbide or gallium nitride films on a semiconductor substrate.

The invention discloses a temperature control method for an intelligent power module based on a gallium nitride power chip, and relates to the technical field of module control, and the method comprises the steps: collecting the temperature data of the intelligent power module through a distributed temperature sensor, carrying out the preprocessing, and carrying out the dynamic power path adjustment of the intelligent power module according to the temperature data; predicting a future temperature based on the power path adjusted by the intelligent power module by using an intelligent algorithm, and performing adjustment according to a prediction result; the intelligent power module cooling system is optimized in combination with the temperature data and the prediction result; and displaying the temperature data and the power path in real time, and storing the temperature data and the power path in a database. According to the method, safe operation of the intelligent power module is guaranteed, accurate adjustment of the power is achieved, meanwhile, the power adjustment effect and cooling system optimization are verified by predicting the future temperature, and the accuracy and flexibility of power adjustment are further improved.

The invention belongs to the field of driving circuits of gallium nitride (GaN) power devices in motor driving or power electronic conversion, and discloses a design method of a three-level active driving circuit for restraining bridge arm crosstalk of a GaN device, and the method comprises the steps that a circuit is connected in a bridge type topological structure, and the bridge type topological structure comprises an upper bridge arm and a lower bridge arm which are the same in structure; the upper bridge arm and the lower bridge arm are both divided into two parts, namely a traditional driving circuit and an auxiliary circuit, and the auxiliary circuit is divided into a negative voltage self-recovery circuit and a crosstalk suppression circuit. According to the invention, a negative voltage self-recovery circuit and a crosstalk suppression circuit are formed by using the output and reverse conduction characteristics of the charge pump and the auxiliary GaN device. The advantages of the two methods are combined, the defects of a traditional method are effectively overcome, the turn-off speed is increased, the turn-off loss is reduced, and the positive and negative crosstalk is reduced while the turn-on speed is hardly influenced and the reverse turn-on loss is not additionally increased. The overall design is flexible, efficient and reliable.

The invention discloses a dynamic on-resistance test circuit based on a gallium nitride transistor and a test method thereof. Belongs to the technical field of power electronics. The circuit comprises a DPT test circuit, a switch state switching circuit and a clamping circuit, the test method comprises the following steps: monitoring the voltage between test points on the clamping circuit and the current on the coaxial resistor to obtain the on resistance of the to-be-tested tube; the switching between the hard switching test and the soft switching test is realized by changing the switch interface. According to the invention, a gallium nitride transistor and a clamping circuit are introduced into a traditional double-pulse test circuit, and a dynamic on-resistance test function in a soft switching mode and a hard switching mode is integrated. Compared with a traditional testing circuit, the clamping circuit can capture the dynamic on-resistance within nanosecond time delay, meanwhile, the peak of the clamping voltage is greatly reduced, the testing precision is improved, and rapid and accurate measurement of the dynamic on-resistance is achieved.

The invention discloses a dynamic power distribution method and system for a gallium nitride power adapter, and the method comprises the steps: monitoring the charging state parameters and charging environment parameters of all interface connection equipment of the gallium nitride power adapter, determining an optimal charging power index and an optimal charging safety index of each interface connection device according to the charging state parameters and the charging environment parameters; reading the residual electric quantity information and the equipment type of each piece of interface connection equipment, and determining the charging priority of each piece of interface connection equipment based on the residual electric quantity information and the equipment type; generating a power distribution scheme through an intelligent algorithm based on the optimal charging power index, the charging safety index and the charging priority of each interface connection device; and determining the output power of each interface according to the power distribution scheme, carrying out dynamic adjustment, and carrying out charging safety monitoring on each connection device according to an adjustment result. The stable and safe charging power can be determined based on the charging characteristic and the safety protection of each connecting device, and the safety and the charging efficiency are improved.

The invention relates to an enhanced gallium nitride high-mobility transistor and a preparation method thereof. The transistor sequentially comprises a substrate, a buffer layer, an i-GaN channel layer, an AlGaN barrier layer, a p-GaN layer and a gate dielectric layer from bottom to top, the source electrode and the drain electrode are respectively in ohmic contact with the two-dimensional electron gas, and the grid electrode and the p-GaN layer are in Schottky contact, so that the two-dimensional electron gas below the grid electrode is exhausted to realize normal closing; an electrode is arranged in a region between the grid electrode and the drain electrode, a thin-layer medium is arranged below the electrode, and the thin-layer medium and the electrode form an equivalent MIS grid structure; and the electrode is electrically connected with the source electrode. The switching time of the device is determined by the switching speed of the p-GaN HEMT composed of S-G1-D. Compared with a traditional Si MOS cascade structure, the device has the advantages of being fast in switching and free of reverse recovery charges. And meanwhile, the withstand voltage of the device is determined by a depletion mode MIS GaN HEMT consisting of S-G2-D, and the p-GaN grid does not bear high voltage, so that the device has the advantage of high reliability.

The invention discloses a high-power all-gallium nitride LED driving power supply circuit which comprises an EMI filtering and rectifying circuit, a GaN active power factor correction circuit, a GaN half-bridge LLC resonant converter circuit and a GaN synchronous rectifying and filtering circuit. The PFC and LLC combined control module integrates a power factor correction function and a resonance circuit frequency regulation function, the GaN active power factor correction circuit is connected with the PFC and LLC combined control module to realize power factor correction, and the GaN half-bridge LLC resonant converter circuit is connected with the PFC and LLC combined control module to realize output power regulation; and a constant-current voltage-limiting feedback circuit for outputting current and voltage detection feedback is arranged between the GaN synchronous rectification filter circuit and the PFC and LLC combined control module. The advantages of high efficiency of the GaN switching tube and high working frequency of the circuit are utilized, so that power loss and heat dissipation requirements are reduced, and the efficiency and power density of the LED power supply are improved. The invention has the advantages of high efficiency, high power density, high reliability and the like.

The invention relates to the technical field of chip encryption, in particular to an E-type effect amplifier electromagnetic heating method and system based on gallium nitride. The real-time resistance correction value is calculated by acquiring the real-time resistance data and the real-time temperature data and combining the working characteristic information and the ideal parameter information of the gallium nitride device, so that the temperature change of the gallium nitride device can be quickly responded, and then the resistance division subset and the temperature division subset are respectively acquired; a plurality of temperature-resistance correlation groups are obtained after permutation and combination, a data basis is provided for establishing a working voltage prediction model, then the working voltage prediction model is trained through historical data, and finally a real-time resistance correction value and a real-time temperature value are input into the corresponding working voltage prediction model to obtain a working voltage simulation value. And a circuit where the gallium nitride device is located is adjusted according to the working voltage analog value, so that the working voltage and the working current of the gallium nitride device are close to ideal values, and stable power output of the device is ensured.

The invention discloses a gallium nitride device and a preparation method thereof. The gallium nitride device comprises a substrate; the channel layer is positioned on one side of the substrate; the composite barrier layer comprises a first barrier layer, a second barrier layer and a third barrier layer; the first barrier layer is located on the side, away from the substrate, of the channel layer; the second barrier layer is located on the side, away from the channel layer, of the first barrier layer; the second barrier layer is used as an etching barrier layer and is used for protecting the first barrier layer; the third barrier layer is located on the side, away from the first barrier layer, of the second barrier layer; a doped III-V group semiconductor layer and a gate electrode; the source electrode is located on the side, away from the channel layer, of the first barrier layer; and the drain electrode is positioned on one side, far away from the channel layer, of the first barrier layer. According to the technical scheme provided by the embodiment of the invention, in the process of etching the doped III-V group semiconductor layer, the first barrier layer at one side of the channel layer is prevented from being over-etched, so that the electrical performance of the gallium nitride device is improved.

The invention provides a gallium nitride radio frequency device defect detection method and system based on deep learning, and relates to the technical field of gallium nitride devices, and the method comprises the steps: generating and preprocessing a multispectral image data set; performing channel and space two-dimensional attention calculation, and performing feature optimization in combination with deformable convolution and residual connection; constructing a multi-scale feature pyramid, and constructing a multi-level classification tree based on feature similarity to perform fine-grained defect classification; and utilizing the deep neural network model to evaluate the influence degree of the defect on the device performance. According to the method, the defect position and type of the gallium nitride radio frequency device can be accurately identified, the performance influence of the defect is quantitatively evaluated, and the detection precision and efficiency are improved.

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to an ultraviolet light catalysis assisted gallium nitride wafer polishing method which comprises the following steps: S1, fixing a ground and flushed gallium nitride wafer on a clamp of a polishing machine; s2, the sealed cabin of the polishing machine is vacuumized until the vacuum degree reaches a set vacuum degree threshold value, and then the sealed cabin is filled with oxygen until the pressure value of the oxygen in the sealed cabin reaches a set pressure threshold value; s3, an ultraviolet lamp and a heater are turned on, the ultraviolet lamp irradiates the polishing solution, the heater heats the polishing solution to a set temperature and keeps the temperature constant, and then the polishing machine is started to polish the gallium nitride wafer; and S4, cleaning the polished gallium nitride wafer. According to the method, the oxidation rate is increased, and the polishing efficiency of the gallium nitride wafer is further improved.

The invention relates to the technical field of drivers, and discloses a low-delay control method, system, equipment and medium for a gallium nitride gate driver, and the method comprises the steps: carrying out the feature extraction and nonlinear mapping processing of the driving voltage, gate charge and switching time sequence parameters of the gate driver, and obtaining time domain characteristic data and a parameter distribution model; duty ratio modulation function calculation is carried out to obtain a rising edge duty ratio parameter and a falling edge duty ratio parameter; performing dynamic planning solution on the state transition equation to obtain an optimal control sequence; performing driving control on a gate driver according to the optimal control sequence, and acquiring running state data through a plurality of monitoring points to obtain an actual driving delay value and an actual switching loss value; the Gaussian process model is constructed based on the actual driving delay value and the actual switching loss value, the updated control parameters are obtained through iterative sampling calculation, the optimal control sequence considering multivariable constraints is obtained, and the accuracy of driving control is remarkably improved.

The invention relates to the technical field of thermal management of power adapters, and discloses a multi-mode power management method and device of a gallium nitride adapter. The multi-mode power management method of the gallium nitride adapter comprises the following steps: dividing the interior of the adapter into a plurality of cooling priority regions according to the thermal sensitivity of elements, and integrating a three-dimensional layered micro-channel structure; monitoring the temperature of each area and the state of a cooling system in real time; constructing a self-adaptive flow distribution algorithm, and dynamically adjusting the flow distribution of the cooling liquid according to the real-time temperature state of each region; the maximum allowable power under the current cooling capacity is calculated, and power parameters are dynamically adjusted; dynamically switching the working mode of the adapter; through the synergistic effect of the regional differentiation micro-channel cooling structure and multi-mode power management, the technical effects that the temperature management effect is improved, the reliability is improved, the service life is prolonged, and the power output capacity is enhanced are achieved.

The invention relates to a power device dynamic on-resistance detection method, system and equipment, a storage medium and a program product, and is applied to a power device dynamic on-resistance detection system, and the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector, the double-pulse test circuit is provided with a tested gallium nitride power device. The method comprises the following steps: under the condition that the test temperature of a tested gallium nitride power device meets a preset test condition, sending multiple groups of double-pulse test signals to a double-pulse test circuit through a controller; collecting multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals through a signal collector; and detecting the on-resistance of the tested gallium nitride power device through the upper computer based on the plurality of groups of electrical test parameters. By adopting the method, the detection accuracy of the dynamic on-resistance detection of the power device is improved.

This disclosure is directed toward a method for producing a solid-state battery layer structure. The method may include providing an anode layer comprising silicon, forming a plurality of nanowire structures including silicon and / or gallium nitride on the anode layer and depositing a solid electrolyte layer on the anode layer. In some examples, the method may also include depositing a cathode layer on the solid electrolyte layer, depositing a cathode current collector metal layer on the cathode layer, etching holes through the anode layer, filling the holes with an electrically conducting material; and depositing an anode current collector metal layer on a bottom surface of the anode layer.

The invention relates to the technical field of gas purity detection, in particular to a gas source purity detection device and a gallium nitride production system. The gas source purity detection device comprises a main pipe body, a supporting piece, a control ring, a moving arm and a concentration sensor. The main pipe body is used for being connected with an air source pipeline. The control ring is rotationally matched with the supporting piece and driven by the driver, and the control ring and the outer wall face are rotationally sealed. A gas collecting groove is formed in the inner ring wall of the control ring. The supporting piece is provided with a mounting blind hole, and the moving arm is slidably matched with the mounting blind hole and is slidably sealed. A first elastic piece is connected between the moving arm and the hole bottom wall of the mounting blind hole in an abutting mode. The concentration sensor is arranged on the outer side wall of the moving arm. When the control ring rotates, the gas collecting groove can periodically communicate with the main pipe body and can also periodically move to the moving arm. The gas source purity can be continuously and accurately detected for a longer time, and automatic calibration is achieved while purity detection is conducted.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a SiC VDMOSFET (Vertical Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure with high heat dissipation performance, which comprises a plurality of MOS cells arranged in parallel, and is characterized in that each MOS cell comprises a metal drain electrode, a semiconductor epitaxial layer, a metal source electrode and a gate oxide layer covering the surface of the metal source electrode, performing ion implantation in the semiconductor epitaxial layer to form an N substrate layer, an N drift layer, an N well layer, a heavily doped P layer and a P well layer; source electrode doping layers are arranged on the two sides of a single MOS cell, the source electrode doping layers are in ohmic contact with the metal source electrodes, and the source electrode doping layers are made of gallium arsenide or gallium nitride or nichrome. According to the invention, the source electrode doping layer with the sinking design is arranged above the MOS cell, so that the N well layer can be in direct contact with the metal source electrode, and the N well layer can be in indirect contact with the metal source electrode through the source electrode doping layer, thereby reducing the ohmic resistance of the N well layer and the metal source electrode, and reducing the heating at the contact position.

The invention relates to the technical field of accurate transmission control, in particular to a transmission device and a gallium nitride production system. In the transmission device, a transmission shaft is used for enabling a power output shaft of the driver to be in transmission connection with the main shaft body. And the transmission sleeve is in transmission fit with the transmission shaft and sleeves the transmission column. The first barrel and the second barrel are coaxially and fixedly connected, the inner spaces of the first barrel and the second barrel are communicated, and the first barrel is located at the end, close to the transmission column, of the second barrel. The first barrel is provided with internal threads. The rotating part is provided with an external thread, the rotating part is rotatably matched in the first barrel, and the rotating part and the first barrel are movably sealed. The rotating piece is connected with the transmission column. And the piston is in sliding fit in the second barrel. The pressure sensor is arranged on the inner side of the sealing plate, and a first elastic piece is connected between the pressure sensor and the piston in an abutting mode. The transmission precision can be calibrated as required according to the actual transmission situation, and the device can adapt to the situation that short-distance transmission and long-distance transmission are mixed.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a dielectric layer formed over a lower n-type gallium nitride (n-GaN) layer. A first aperture and a second aperture are formed through the dielectric layer and extending to the lower n-GaN layer, the second aperture being narrower than the first aperture. A mesa is formed within the first aperture by successively forming a mesa n-GaN layer, a mesa MQW layer above the mesa n-GaN layer, and a mesa p-GaN layer above the mesa MQW layer. A pyramid having sidewalls is formed within the second aperture by successively forming a pyramidal n-GaN layer, a pyramidal MQW layer, and a pyramidal p-GaN layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer form a mesa LED. The pyramidal n-GaN layer, pyramidal MQW layer, and pyramidal p-GaN layer form a pyramid LED.

A shield trench power device such as a trench MOSFET or IGBT includes a substrate or an epitaxial layer of silicon, silicon carbide, gallium nitride, or gallium arsenide and employs an in-trench structure including a gate structure and an underlying polysilicon or oxide shield region that contacts a shield region in an epitaxial or crystalline layer of the device. The poly silicon region may be laterally confined by spacers in a gate trench and may contact or be isolated from the underlying shield region. Alternatively, the polysilicon region may be replaced with an insulating region.

The invention provides a gallium nitride thin film and a growth method of a quasi Van der Waals epitaxial gallium nitride thin film. The method comprises the following steps: step 101, transferring or directly growing on a substrate to obtain a two-dimensional material layer; step 102, processing the two-dimensional material layer by adopting a plasma enhanced MOCVD (Metal Organic Chemical Vapor Deposition) method; and step 103, performing quasi Van der Waals epitaxial growth of gallium nitride on the processed two-dimensional material layer to form the gallium nitride single crystal film. The invention also provides the gallium nitride film prepared by the method. According to the method provided by the invention, the quasi van der Waals epitaxy is carried out by using the plasma enhanced MOCVD, and plasma treatment and epitaxial growth can be completed in situ. Compared with MBE equipment, the method has the characteristics of high growth speed and large growth quantity in quasi Van der Waals epitaxy; compared with traditional MOCVD, the possibility that the two-dimensional material is polluted in the substrate transfer process can be reduced, and the crystal growth quality is improved.

The invention relates to the technical field of antennas, in particular to a multi-level intelligent overheating protection system and method based on a gallium nitride module antenna. According to the method, a thermal load optimal migration path is analyzed based on a virtual thermal capacity network model, and an input impedance matching network of a target unit is synchronously tuned according to the thermal load optimal migration path to compensate beam phase distortion caused by thermal migration; and according to the boundary constraint condition of the real-time threat scene feature injection virtual thermal capacity network model, dynamically solving a game equilibrium solution of a thermal load migration path and a beam parameter tuning amount, and generating a thermal-radio frequency combined control instruction set. According to the method, full-process closed-loop control from thermal inertia characteristic analysis, thermal network modeling to thermal-radio frequency collaborative optimization is realized, so that the gallium nitride antenna system can intelligently plan an optimal thermal migration path and compensate thermally induced performance distortion in real time in a complex thermal environment and a threat scene, and finally dual optimization of heat dissipation efficiency and radio frequency indexes is achieved.

An electronic component. The electronic component includes a base; a first semiconductor device attached to the base and having: a first Gallium nitride (GaN)-based switch having a first gate, a first source and a first drain, the first gate arranged to control a current flow between the first source and the first drain; a second GaN-based switch having a second source, a second gate and a second drain, the second gate coupled to the first gate, and the second drain coupled to the first drain. In one aspect, the electronic component also includes a second semiconductor device attached to the base and having: a logic circuit coupled to the second source and arranged to detect a magnitude of the current flow; and a driver circuit coupled to the first and second gates, the driver circuit arranged to control on and off states of the first and second GaN-based switches.

As more power electronics apparatuses use fast switches, such as silicon carbide (SiC) or gallium nitride (GaN) switches. to improve the efficiency and reduce switching losses. significantly higher electromagnetic interferences (EMI) are generated as a result. While techniques of random pulse-width modulation (PWM) have been developed to reduce this increased EMI, the use of such techniques leads to an unbalance of the stored electric energy of the energy storing components used to balance the energy across some of the switches of these apparatuses. This issue can be solved with a novel pulse width modulation method for generating the switching signals with variable frequencies for a converter's high-frequency switches that better balance its energy balancing components. This novel method can utilize comparing a reference signal to a carrier signal that can be generated with various switching frequencies that are phase-shifted from the following set of switching frequency, by (2N−1)π radians.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.

The present invention belongs to the technical field of ceramic material preparation methods, and specifically relates to a lead-free piezoelectric ceramic, its preparation method, and application. The lead-free piezoelectric ceramic is a KNN-based lead-free piezoelectric ceramic or a BT-based lead-free piezoelectric ceramic having a perovskite structure; the KNN-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with potassium sodium niobate (KNN) ceramic as the matrix, and the chemical formula is 0.955 (K 0.48 Na 0.52 )Nb 0.98 Sb 0.02 O3‒0.045Bi 0.5 Na 0.5 ZrO3‒0.75mol% GaN; The BT-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with barium nitride (BT) as the matrix, and the chemical formula is (Ba 0.85 Ca 0.15 )(Ti 0.9 Zr 0.1 ) O‒1.75mol% GaN; the lead-free piezoelectric ceramic has a dense structure, is lead-free, and exhibits excellent electrochemical properties. The preparation method for the lead-free piezoelectric ceramic is simple, low-cost, pollution-free, and utilizes readily available raw materials. The lead-free piezoelectric ceramic can be used to prepare energy harvesters and has significant application value.

The utility model relates to the technical field of gallium nitride power devices, in particular to a double-channel enhanced GaN power device, which comprises a substrate, a nucleating layer, a buffer layer, a lower channel layer, a first barrier layer, an upper channel layer, a second barrier layer and an insulating medium layer which are sequentially arranged from bottom to top. The device further comprises a first source-drain electrode group, a second source-drain electrode group, a first grid electrode and a second grid electrode. The structure is provided with two channels, two source electrodes, two grid electrodes and two drain electrodes, the on-resistance of the channels is reduced by adding one conducting channel, and the ohmic contact resistance of the source electrodes is reduced by forming ohmic contact between the two source electrodes and the two channels respectively. The ohmic contact resistance of the drain electrodes is reduced by forming ohmic contact between the two drain electrodes and the two channels respectively, so that the on resistance of the whole device is reduced under the condition that the chip area is not increased, and finally the chip size and the chip cost are reduced. In addition, the design of the two grid electrodes can ensure the control capability of the grid electrodes on the two channels.