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2225 results about "Superlattice" patented technology

A superlattice is a periodic structure of layers of two (or more) materials. Typically, the thickness of one layer is several nanometers. It can also refer to a lower-dimensional structure such as an array of quantum dots or quantum wires.

Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
Owner:CREELED INC

GaN-based Single chip white light emitting diode epitaxial material

The invention relates to GaN-based Single chip white light emitting diode epitaxial material comprising a substrate and also comprising an initial growth layer, an intrinsic GaN buffer layer, an n-type GaN layer, a stress relaxation layer, an InGaN multiple quantum well structure light emitting layer, a p-type AlGaN sandwich layer and a p-type GaN layer which grow in sequence on the substrate. Thestress relaxation layer is an InGaN/GaN superlattice stress modulation layer which comprises InGaN layers and GaN layers, which are grown alternatively; the InGaN layers and GaN layers have the growth cycle of 6-500 and the corresponding thickness of 10 nm to 3 Mum; and the In components in the InGaN layers are in the range of 1-35 percent. Because the stress-relaxed InGaN/GaN superlattice stressmodulation layer is added between the n-type GaN layer and a multiple quantum light emitting layer, the In segregation effect is strengthened, InGaN quantum dots with different components are formed,and the mixing of different-wave light emitted by the InGaN quantum dots realizes the white light emitting. The cost of the white light emitting diode is reduced radically, the light emitting efficiency and the light using efficiency are increased and the integral performance of the white light emitting diode is improved.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI
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