2results about How to "Reduce dislocation" patented technology

This application provides a cathode material precursor and its preparation method, a cathode material, and a lithium-ion battery, relating to the field of new energy technology. The cathode material precursor is a secondary particle composed of primary particles, forming a composite structure. It includes an inner layer arranged radially along the center of the cathode material precursor and an outer layer composed of sheet-like primary particles stacked flat and enclosing the inner layer. The outer layer's sheets are perpendicular to the pressure direction during compaction, resulting in a secondary particle mechanical strength higher than that of common radial or block-shaped secondary particles. After inheriting this structure, the cathode material can achieve a higher compaction density than common secondary particle products, significantly improving the material's energy density. The secondary particles in this application have different sheet orientations between their inner and outer layers. The sintered cathode material inherits this characteristic structure, resulting in different expansion and contraction directions during charge-discharge cycles. This avoids or reduces the formation of cracks that could cause particle structure collapse, thereby improving cycle performance.

This invention relates to the field of organic functional crystal growth technology, specifically a method for growing organic crystals based on the control of the included angle of the inner wall of a crucible. The method employs a quartz crucible with an axisymmetric conical inner cavity, and controls the included angle β of the inner wall of the crucible to be 10°–30°, preferably 15°–20°. After loading the organic crystal raw material into the crucible, a vacuum of 1×10⁻⁶ is applied. ‑2 After being sealed by welding, and after passing the pre-growth inspection and sealing, the melt is placed in a Bridgman crystal growth furnace for heating and melting and held at that temperature for 24 hours. The axial temperature gradient is controlled, and the melt is directionally solidified and grown from bottom to top at a rate of 1-1.5 mm / h. The organic single crystal is then slowly cooled to obtain the organic single crystal. This invention optimizes the melt flow field and solid-liquid interface by adjusting the crucible angle, reduces the radial temperature gradient, reduces defects such as crystal cracks and dislocations, and improves crystal integrity and optical uniformity. The process is simple, has good repeatability, and is suitable for large-size, high-quality growth of organic scintillation crystals and organic optoelectronic crystals.