1276 results about "Crystal orientation" patented technology

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

The invention discloses a double-force-control automatic compensation method and double-force-control grinding and polishing integrated device.According to the technical scheme, the double-force-control automatic compensation method comprises the steps that workpiece surface crystal orientation data are obtained through a diffraction pattern, and a crystal orientation distribution matrix is generated through denoising and clustering analysis; dividing a crystal orientation region and associating the friction coefficient, hardness and other mechanical properties; based on the material removal rate distribution matrix, a gradient algorithm is adopted to correct grinding tracks and cutting parameters of all areas, and a compensation track matrix is generated; and double-force-control feedback of normal force and tangential force is combined, the abrasive particle contact force and the feeding rate are dynamically adjusted, and a closed-loop compensation strategy is formed. Through crystal orientation partition optimization and double-force-control dynamic compensation, the problem that compensation is insufficient in the grinding process of the glass crystal is solved, and high-precision and self-adaptive surface machining is achieved.

The invention discloses a blade high-cycle fatigue analysis method and system considering crystal orientation angle influence, and the method comprises the steps: calculating the maximum vibration stress at all crystal orientation angles according to the measured maximum vibration stress and the actual crystal orientation angle of a measured blade, and taking the maximum vibration stress as the statistical maximum vibration stress; according to the method, the influence of the crystal angle change on the statistical maximum vibration stress is fully considered, the confidence coefficient of the blade high-cycle fatigue evaluation result obtained through analysis is higher, high-cycle fatigue analysis can be carried out on the blade more accurately, and the risk of blade high-cycle fatigue failure is reduced.

The invention discloses a method and a device for growing a cadmium zinc telluride single crystal, and is characterized in that the method comprises the following steps: (1) putting a cadmium zinc telluride polycrystal ingot into a pyrolytic boron nitride crucible, the cadmium zinc telluride polycrystal ingot is obtained by a preset temperature gradient synthesis method, and has [111] crystal orientation cluster crystal grains in the growth direction; (2) putting the pyrolytic boron nitride crucible into a vacuum closed quartz container, controlling a six-temperature-zone growth furnace through a computer to complete the melting process of a polycrystalline material, and before formal growth, forming a solid-liquid interface distribution structure in which polycrystals are not melted and the rest parts are completely melted at the center of the bottom, wherein the diameter of the solid-liquid interface distribution structure is not less than 30mm; (3) after heat preservation is conducted for a preset time, two-step cooling is achieved in a VGF mode; in the first cooling stage, an initial temperature gradient is formed, and after heat preservation is conducted for a preset time, elimination, merging and growth of [111] crystal nuclei are completed; in the second cooling stage, stable and continuous propulsion of a solid-liquid interface is completed, and continuous growth of single crystals is achieved; and finally, cooling to room temperature to obtain the cadmium zinc telluride single crystal. According to the method, the effect of growing the cadmium zinc telluride crystal with high single crystal rate under the seed crystal-free condition is realized.

A semiconductor structure including vertically stacked nFETs and pFETs containing suspended semiconductor channel material nanosheets (NS) and a method of forming such a structure. The structure is a three dimensional (3D) integration by vertically stacking nFETs and pFETs for area scaling. In an embodiment, vertically-stacked NS FET structures include a first nanosheet transistor located above a second nanosheet transistor; the first nanosheet transistor including a first NS channel material, wherein the first NS channel material includes a first crystalline orientation; the second nanosheet transistor including a second NS channel material, wherein the second NS channel material comprises a second crystalline orientation, the first crystalline orientation is different from the second crystalline orientation. In an embodiment, each of the respective formed vertically-stacked NS FET structures include respective suspended stack of nanosheet channels that are self-aligned with each other.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention discloses a single crystal turbine blade crystal orientation defect detection system based on adaptive optics, particularly relates to the field of nondestructive testing, and is used for solving the problem that thermal damage and signal consistency are difficult to consider in acoustic imaging of complex structural parts. Through partition energy threshold setting, dynamic pulse planning, photoacoustic processing and unified coordinate cross-subarea data synthesis, local thermal damage caused by excessive concentration of energy is effectively avoided in the material detection process, and the requirement for collecting high-bandwidth signals can be met in a large range. The signal-to-noise ratio and the detection efficiency are improved by regulating and controlling pulse energy and a scanning path, the amplitude comparability and the image coherence among regions are ensured through signal normalization correction and subregion image set splicing, high-resolution and comprehensive-coverage acoustic mapping is output, the crystal orientation defects of the single crystal turbine blade are positioned and evaluated, the detection precision is improved, the measurement period is shortened, and the method is suitable for large-scale popularization and application. And the method has an applicable value for aero-engine parts requiring rapid and high-precision nondestructive detection.

The invention relates to the technical field of diamond processing, in particular to a diamond laser slicing method and device. The invention relates to a diamond laser slicing method. The method comprises the following steps: 1) utilizing a laser beam from 1t; 100 gt; the surface vertically enters the interior of the single crystal diamond, and a C-C bond is fractured by forming instant local high temperature so as to be carbonized to form graphite; (2) the laser beam is at the distance lt; 100 gt; the surface is at a certain depth and is scanned along the crystal orientation direction of # imgabs0 # or # imgabs1 #, and by controlling the position of a laser focal plane and the energy of the position, only modification points and a graphite layer are formed, or modification points are formed along lt; 111gt, 111gt; the surface-expanded cracks further form a crack expansion layer, and stress difference is generated between the crack expansion layer and the non-modified layer, so that the diamond layer is convenient to peel off. According to the method, arrangement and / or crack propagation of modified points can be accurately controlled, and stress distribution of a modified layer is optimized, so that high-precision diamond slicing is realized, and fragmentation and damage of a sample are avoided.

This hot-rolled steel sheet has a predetermined chemical composition, a microstructure includes 80% or more of tempered martensite by a volume percentage and a remainder consisting of one or more of ferrite, pearlite, bainite, fresh martensite, and residual austenite, the tempered martensite includes 5×109 pieces / mm3 or more of precipitates containing Ti and having an equivalent circle diameter of 5 nm or less per unit volume, in a surface layer region that is a range from a surface to a 1 / 10 position of a sheet thickness, a sum of an average pole density of a crystal orientation group consisting of {211}<111> to {111}<112> and a pole density in a crystal orientation of {110}<001> is 6.0 or less, and a tensile strength is 980 MPa or more.

The invention belongs to the technical field of titanium alloy performance evaluation, and particularly relates to a method for evaluating the mechanical property of a lamellar structure TC18 titanium alloy, which comprises the following steps: acquiring crystal orientation information of alpha phase and beta phase of an undeformed TC18 titanium alloy, and analyzing the types of alpha variants and the proportion of each alpha variant; applying external force to the undeformed TC18 titanium alloy to enable the undeformed TC18 titanium alloy to generate 5% plastic deformation; obtaining crystal orientation information after deformation; a slippage trace generated by deformation is calibrated, and a slippage system and a Schmidt factor of each alpha variant are calculated according to the slippage trace; analyzing slippage transmission from the alpha phase to the beta matrix, and determining a slippage system started by the beta phase and a Schmidt factor of the slippage system; calculating a Berger vector and a slip transfer geometric compatibility factor remaining on an alpha / beta interface; and evaluating the yield strength of the TC18 titanium alloy according to the slip mode of the alpha variant in combination with the Schmidt factor of the alpha variant, the Schmidt factor of the beta phase in combination with the Berger vector of the alpha / beta interface and the geometric compatibility factor of slip transmission.

The invention belongs to the technical field of graphene heat-conducting property detection, and relates to a graphene heat-conducting property detection system and method based on data analysis, which follows the criterion that the essence of the heat-conducting property of a graphene material which can still well exert the heat-conducting property under various heat-conducting influence factor states is more excellent. Key parameters such as boundary effect change, crystal orientation change, heat flow path change and heat conduction weakening degree are accurately quantified, and accurate data support is provided for evaluating the comprehensive heat conduction performance of the graphene material; therefore, the comprehensive heat-conducting property exerting potential of the target graphene material under the influence of the structural shape, the structural defect and the base material thermal resistance is comprehensively and deeply evaluated, the heat-conducting performance of the graphene material under different conditions is considered, and the essential characteristics of the heat-conducting property of the graphene material are deeply excavated; and a more direct and scientific basis is provided for heat-conducting property evaluation of graphene in different application scenes.

An interface structure characterization method, comprising: constructing a solid-liquid equilibrium system; acquiring interfacial atomic number density distribution of the solid-liquid equilibrium system; and acquiring interface layers on the basis of the interfacial atomic number density distribution. Compared with previous qualitative characterization methods, characterization parameters of interface structure changes are developed on the basis of computation results of radial distribution functions in interface layers, and the parameters can quantitatively characterize the change characteristics of the interface structure, avoiding the situation where the interface structure can only be qualitatively characterized; the present application can be used for quantitatively characterizing interface structures, can characterize differences in interface structures caused by lattice periodic fields when crystals of different orientations come into contact with melts, structural adjustments needed from melts to crystal melts, and change processes from melts to crystal structures (sudden or gradual changes).

The invention discloses a piezoelectric nanofiltration membrane with an electric anti-scaling function and a preparation method and application thereof, and belongs to the technical field of membrane method water treatment. Two-dimensional conductive nanosheets are doped in a traditional PVDF piezoelectric membrane, phase separation is performed in an alternating electric field, then a piezoelectric base membrane with high beta-PVDF content and a crystal orientation structure is prepared, and then interfacial polymerization is performed on the piezoelectric base membrane to form the nanofiltration membrane with piezoelectric activity. By adding the two-dimensional conductive nanosheets into the base film, on one hand, the content of beta-phase PVDF in the base film is increased, so that the piezoelectric property of the base film is enhanced; on the other hand, the two-dimensional conductive nanosheets are induced to be directionally arranged and form conductive synapses on the surface of the base membrane by synchronously applying an alternating electric field in the membrane preparation process, so that after interfacial polymerization, the conductive synapses can penetrate into a polyamide layer and form a conductive network, and finally a piezoelectric signal of the base membrane is conducted to the surface of the nanofiltration membrane; therefore, the nanofiltration membrane is endowed with piezoelectric characteristics and an electric anti-scaling function.

The present invention belongs to the technical field of graphene thermal conductivity detection, and relates to a graphene thermal conductivity detection system and method based on data analysis. The system follows the principle that a graphene material that can still better exert thermal conductivity under various thermal conductivity influencing factors has better thermal conductivity, and accurately quantifies key parameters such as boundary effect changes, crystal orientation changes, heat flow path changes, and thermal conductivity weakening degree, thereby providing accurate data support for evaluating the comprehensive thermal conductivity of graphene materials. The system comprehensively and deeply evaluates the potential of the comprehensive thermal conductivity of target graphene materials under the influence of structural shape, structural defects, and base material thermal resistance, and not only considers the thermal conductivity performance of graphene materials under different conditions, but also deeply explores the essential characteristics of its thermal conductivity, providing a more direct and scientific basis for evaluating the thermal conductivity of graphene in different application scenarios.

The invention discloses a laser powder bed fusion preparation method suitable for local structure regulation and control of complex parts and application. The invention belongs to the technical field of metal additive manufacturing. The method aims at solving the technical problems that an in-situ heat treatment process after powder single-time fusion forming at present is not suitable for regulating, controlling and improving local structures of complex parts, and shrinkage cracks appear after solidification. The method comprises the following steps: repeatedly building 1-4 three-dimensional models by adopting software, superposing the models, and endowing each model with a group of scanning parameters; and repeatedly scanning layer by layer according to the established model by adopting a laser powder bed fusion technology. According to the invention, transformation of columnar crystal orientation isometric crystals is realized. And meanwhile, cracks formed by solidification and shrinkage can be fed, and a crack-free and compact printing component is prepared. And the forming process is simpler and more convenient, and the method is widely applied to the field of forming complex alloy parts and suitable for industrial production.

The present application discloses a structure of a trench-gate power MOSFET and a manufacturing method thereof. The structure includes: a second epitaxial layer; a strip-shaped P pillar, the length direction of the strip-shaped P pillar being parallel to the projection direction of the crystal orientation with the most obvious channel effect on the surface of the epitaxial material; a trench gate, including a trench, the trench being parallel to the length direction of the strip-shaped P pillar or perpendicular to the length direction of the strip-shaped P pillar, and filling a filler into the trench to manufacture the trench gate. When the length direction of the trench is parallel to the length direction of the strip-shaped P pillar, the trench is located directly above the strip-shaped P pillar and has the same width as the strip-shaped P pillar. When the length direction of the trench is perpendicular to the length direction of the strip-shaped P pillar, the width of the trench is not related to the strip-shaped P pillar; a surface source region. The advantage of the present application is that it can reduce the manufacturing steps and simplify the processing technology.

The invention relates to the technical field of vacuum physical vapor deposition, and provides a preparation method of a porous structure low-density IWO evaporation target material based on current calcination, which comprises the following steps: firstly, carrying out current calcination on raw materials, promoting WO3 crystal grains to preferentially grow along the 111 crystal orientation by utilizing a Joule effect, forming a long-range ordered structure, increasing the density after calcination, and then crushing to retain the crystal form, so as to obtain the low-density IWO evaporation target material with the porous structure. The preparation method comprises the following steps of: adding a 15wt% PVA ethanol solution, then carrying out ball-milling cold isostatic pressing molding, then carrying out distributed sintering, volatilizing PVA to form a porous framework through first-step sintering, carrying out second-step sintering to obtain crystal grains with a continuous porous structure, and finally carrying out RPD film coating under specific parameters, so that the powder falling rate is reduced, and the TCO film is good in uniformity; through the processes of current calcination, crushing, binder forming and sintering, on the premise that the low density of the target material is kept, cooperative control over directional connection of a porous structure and crystals is achieved, the powder falling rate is reduced by 60%, the regular porous structure and ordered crystal arrangement effectively disperse thermal stress, and structural collapse is avoided; the evaporation stability is improved, and the surface roughness is reduced to Ralt; the evaporation rate fluctuates by + / -5%, and the film uniformity reaches + / -2.0%.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention discloses a gallium oxide Schottky diode with a passivated two-dimensional semimetal insertion layer and a preparation method thereof, and the gallium oxide Schottky diode comprises a substrate which is made of N-type heavily doped beta-Ga2O3 with different crystal orientations; the epitaxial layer is located on the substrate; wherein the material of the epitaxial layer is N-type unintentionally doped beta-Ga2O3; the two-dimensional semimetal growth insertion layer is located on the epitaxial layer; the protection layer is located on the two-dimensional semimetal growth insertion layer, and the orthographic projection of the protection layer and the orthographic projection of the two-dimensional semimetal growth insertion layer are overlapped in the direction perpendicular to the substrate; the terminal structure is located on the epitaxial layer, the terminal structure is of an annular structure, and the terminal structure is arranged around the two-dimensional semimetal growth insertion layer and the protection layer; the anode covers the protective layer and a part of the terminal structure; and the cathode is positioned on one side, deviating from the epitaxial layer, of the substrate. According to the beta-Ga2O3-based SBD device provided by the invention, the two-dimensional material can adjust the energy band of the Ga2O3 surface by virtue of the inherent Van der Waals surface, and endow the Schottky barrier with extremely strong flexibility.

The invention discloses a heavy-duty gas turbine blade creep fatigue life design method considering an anisotropic effect, and relates to the technical field of gas turbine key component creep fatigue life evaluation.The method comprises the steps that orientation factor parameters on characteristic orientation are determined based on tensile data on [001] crystal orientation; constructing a modified stress relaxation formula; constructing an anisotropic failure strain energy density equation based on the pure creep performance data and the orientation factor parameters, and determining an upper platform of failure inelastic strain energy density on [001] crystal orientation; further determining an upper platform of the failure inelastic strain energy density on the feature orientation; constructing a creep damage prediction model based on a modified stress relaxation formula and an anisotropic failure strain energy density equation; and adopting the creep damage prediction model to obtain the creep fatigue life of the anisotropic turbine blade material sample. The method meets the actual requirements of service life evaluation of the high-temperature part of the heavy-duty gas turbine.

The invention belongs to the field of material plastic deformation, and particularly discloses a crystal grain progressive rotation visualization method and system based on a crystal plasticity finite element, and the method comprises the steps: constructing a crystal plasticity constitutive model, and employing an index method to describe the relation between a crystal grain Euler angle and a Miller index; a crystal plasticity finite element model is constructed, the crystal plasticity finite element model comprises a plurality of crystal grains with random orientation, and deformation of each crystal grain is controlled by a crystal plasticity constitutive model; performing contact constraint on the crystal plasticity finite element model through a mold in Abaqus; performing multidirectional compression simulation on the crystal plasticity finite element model to reflect a real multidirectional forging process; finite element grid node coordinates and Euler angle data of a concerned observation surface in the crystal plasticity finite element model are obtained, an EBSD interaction file is constructed, then an IPF graph is drawn, and grain progressive rotation visualization is achieved. According to the invention, dynamic simulation and visual analysis of crystal orientation in the multidirectional forging process are realized, and a grain progressive rotation mechanism is revealed from a microscopic scale.

The invention discloses a manufacturing method of a high-precision intelligent instrument measuring chip and a related device. The method comprises the following steps: firstly, performing multi-stage vacuum annealing and atomic layer reduction corrosion removal on lower-layer copper interconnection, introducing thermal-electric synergistic stress to convert a vacancy-rich layer into < 111 > preferred grains, and obtaining a bonding preparation surface with consistent crystal orientation; and then low-temperature copper-copper thermocompression bonding is completed in a controlled inert atmosphere, and interconnection initial thermoelectric force is intercepted in real time. The method comprises the following steps: establishing a vertical heat flow according to a space mapping power consumption sequence by driving an upper-layer functional region, collecting an interface voltage response, and extracting an interconnection Seebeck deviation through time sequence registration and differential processing; and according to a deviation result, synchronous fusing and parallel connection are implemented by using a programmable metal section of the rewiring layer, a thermoelectric balance interconnection network is constructed, and a zero drift calibration value is written in. According to the scheme, direction-dependent thermoelectromotive force is eliminated in a closed mode on the three levels of material, measurement and interconnection reconstruction, and therefore long-term zero drift stability of a measurement chain is guaranteed under the nanovolt-level noise condition.

The embodiment of the invention provides a piezoelectric element and a preparation method thereof, a piezoelectric device and electronic equipment, relates to the technical field of semiconductor devices, and is used for reducing the manufacturing error of the piezoelectric element and improving the uniformity of the piezoelectric element. The piezoelectric element includes a substrate, a vibration plate, and a plurality of piezoelectric elements. The substrate is provided with a plurality of cavities penetrating through the substrate in the thickness direction, and the cavities are sequentially arranged in the first direction of the substrate; the substrate is a monocrystalline silicon substrate. The diaphragm covers the substrate and the plurality of cavities. The value of the first direction is the result of the substrate; 100 gt; and the crystal orientation deviates within the range of + / -15 degrees. The value of E / (1-v2) of the vibration plate in the interval is small, and the value of E / (1-v2) is at the result of the substrate; 100 gt; and in the direction, the value of E / (1-v2) of the vibration plate is the minimum. Therefore, after the plurality of cavities are arranged along the first direction, the influence of diaphragm thickness deviation, diaphragm quality deviation and mechanical property deviation of the vibrating plate on the uniformity of the piezoelectric element is reduced.

The invention discloses a welding thermal stress simulation method, device, equipment and medium based on a crystal plasticity finite element, and relates to the technical field of welding thermal stress finite element simulation. The method comprises the steps that a sample is prepared according to a specific multi-phase metal material, and phase distribution and crystal orientation information of a two-dimensional plane of the material are obtained through a metallographic experiment; and a three-dimensional multi-grain model is constructed based on the two-dimensional information. According to the method, a crystal plastic constitutive model is adopted to describe the flowing behavior of the material at high temperature, crystal slippage and polycrystal interaction are considered, the influence on the material performance is reflected from the microstructure evolution level, and the problem that the influence on the macroscopic mechanical performance of a microstructure is difficult to capture in welding multiphase metal material simulation is solved; two-dimensional representation is obtained through a metallographic experiment, the Young modulus and rigidity matrix parameters are accurately calculated by combining forward stretching and shear simulation, the rigidity matrix precision is improved, a temperature field area is divided, stress evolution and residual stress are calculated by combining a thermal-elastic-plastic model, and the welding thermal stress calculation precision is improved.

The invention relates to a flexible conductive thin film, a preparation method thereof and a flexible pressure sensor. The preparation method comprises the following steps: providing a flexible conductive thin film with hydrophilicity and crystal orientation of lt; 100 gt; the device comprises a silicon substrate, a flexible conductive mixed solution, a mixed solution containing at least two kinds of first colloidal microspheres with different diameters, and a mixed solution containing second colloidal microspheres with a single diameter, placing a mixed solution containing at least two kinds of first colloidal microspheres with different diameters on a silicon substrate for self-assembly, reactive ion etching, magnetron sputtering and wet etching to obtain a first pyramid microstructure silicon template; placing a mixed solution containing second colloidal microspheres with a single diameter in the first pyramid microstructure silicon template for self-assembly, reactive ion etching, magnetron sputtering and wet etching to obtain a multi-level pyramid microstructure silicon template; the flexible conductive mixed solution is placed in the multi-level pyramid microstructure silicon template to obtain the flexible conductive film, so that the sensitivity of the flexible pressure sensor can be improved, and the detection range and the reliability can be improved.

A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a channel structure of a first type of crystalline orientation (e.g., <110> or <111>) and the GAA NFET(s) include a channel structure of a second type of crystalline orientation (e.g., <100>) different from the first type of crystalline orientation of the GAA PFET(s). The different crystalline orientation channels improve the balance of carrier mobility for both carrier types (i.e., P-type and N-type) of GAA FETs in the GAA FET device. In one aspect, the different crystalline orientation channels are provided through a substrate to increase and / or balance carrier mobility between GAA PFET(s) and NFET(s) to achieve a more balanced drive strength between these types of transistors.

The invention provides a preparation method of a plate-shaped glassy carbon electrode, which comprises the following steps: curing a resin raw material into a plate-shaped resin block, carbonizing in an inert atmosphere, and respectively introducing a nitrogen source and a boron source for doping operation to obtain a co-doped plate-shaped resin block precursor; placing the co-doped plate-shaped resin block between two porous graphite plates, and carrying out high-temperature treatment to obtain a glassy carbon matrix; and immersing the glassy carbon substrate into the adhesion layer solution to form an adhesion layer, transferring the adhesion layer into a deposition solution which comprises a bismuth-containing solution and a gold-containing solution, forming bismuth-gold nano-dots on the adhesion layer, and washing and drying the bismuth-gold nano-dots to obtain the plate-shaped glassy carbon electrode. Through directional arrangement of crystal orientations, the tantalum carbide coating achieves higher electrical conductivity and thermal conductivity. And the sensitivity and the service life of the plate-shaped glassy carbon electrode are obviously improved and prolonged.

To provide an aluminum alloy foil.SOLUTION: An aluminum alloy foil formed of an aluminum alloy comprising a composition which contains Fe: 0.8 mass% or more and 2.0 mass% or less, and Si: 0.2 mass% or less, and a balance Al and inevitable impurities is such that: 0.2%-yield-strength is 45 MPa or more, and extension is 15% or more; a ratio of an area ratio (Cu orientation / Cube orientation) of Cu orientation to an area ratio of Cube orientation in an area ratio of each orientation on the surface is 3 or more; an average crystal grain size of crystal grains surrounded by an orientation difference of 5° or more is 3.5 μm or less on the surface; and a ratio of crystal grain boundary lengths in the same visual field acquired by performing crystal orientation analysis by an EBSD method on the surface satisfies the following (1) formula. A crystal grain boundary length of crystal grains having an orientation difference of 2° or more and less than 15° / a crystal grain boundary length of crystal grains having an orientation difference of 15° or more>0.5...(1) formula.SELECTED DRAWING: Figure 1

A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of the second surface through relatively moving a focal point and the wafer along a first direction that is parallel to the crystal plane of the second surface and in which an acute angle formed between the first direction and the crystal orientation <100> is equal to or smaller than 5°, and separating the wafer into a first-surface-side wafer including devices and a second-surface-side wafer including no devices.

The invention discloses a vapor deposition device and a working method thereof, and the device comprises a reaction chamber which is internally provided with a tray for supporting a substrate; the gas supply mechanism is connected to the gas inlet of the reaction chamber, and the output end of the gas supply mechanism is located above the tray; the driving mechanism is positioned below the reaction chamber and is in magnetic attraction fit with the tray; and the driving mechanism drives the tray to move back and forth in the horizontal direction so as to deposit and coat the substrate. According to the mode, reactants cannot be deposited on other interfaces in the reaction chamber, single-point nucleation and crystal orientation consistency are achieved, and therefore the quality and performance of a generated film are improved.