949 results about "Crystal orientation" patented technology

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

The invention discloses a double-force-control automatic compensation method and double-force-control grinding and polishing integrated device.According to the technical scheme, the double-force-control automatic compensation method comprises the steps that workpiece surface crystal orientation data are obtained through a diffraction pattern, and a crystal orientation distribution matrix is generated through denoising and clustering analysis; dividing a crystal orientation region and associating the friction coefficient, hardness and other mechanical properties; based on the material removal rate distribution matrix, a gradient algorithm is adopted to correct grinding tracks and cutting parameters of all areas, and a compensation track matrix is generated; and double-force-control feedback of normal force and tangential force is combined, the abrasive particle contact force and the feeding rate are dynamically adjusted, and a closed-loop compensation strategy is formed. Through crystal orientation partition optimization and double-force-control dynamic compensation, the problem that compensation is insufficient in the grinding process of the glass crystal is solved, and high-precision and self-adaptive surface machining is achieved.

The invention discloses a blade high-cycle fatigue analysis method and system considering crystal orientation angle influence, and the method comprises the steps: calculating the maximum vibration stress at all crystal orientation angles according to the measured maximum vibration stress and the actual crystal orientation angle of a measured blade, and taking the maximum vibration stress as the statistical maximum vibration stress; according to the method, the influence of the crystal angle change on the statistical maximum vibration stress is fully considered, the confidence coefficient of the blade high-cycle fatigue evaluation result obtained through analysis is higher, high-cycle fatigue analysis can be carried out on the blade more accurately, and the risk of blade high-cycle fatigue failure is reduced.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention discloses a single crystal turbine blade crystal orientation defect detection system based on adaptive optics, particularly relates to the field of nondestructive testing, and is used for solving the problem that thermal damage and signal consistency are difficult to consider in acoustic imaging of complex structural parts. Through partition energy threshold setting, dynamic pulse planning, photoacoustic processing and unified coordinate cross-subarea data synthesis, local thermal damage caused by excessive concentration of energy is effectively avoided in the material detection process, and the requirement for collecting high-bandwidth signals can be met in a large range. The signal-to-noise ratio and the detection efficiency are improved by regulating and controlling pulse energy and a scanning path, the amplitude comparability and the image coherence among regions are ensured through signal normalization correction and subregion image set splicing, high-resolution and comprehensive-coverage acoustic mapping is output, the crystal orientation defects of the single crystal turbine blade are positioned and evaluated, the detection precision is improved, the measurement period is shortened, and the method is suitable for large-scale popularization and application. And the method has an applicable value for aero-engine parts requiring rapid and high-precision nondestructive detection.

The invention relates to the technical field of diamond processing, in particular to a diamond laser slicing method and device. The invention relates to a diamond laser slicing method. The method comprises the following steps: 1) utilizing a laser beam from 1t; 100 gt; the surface vertically enters the interior of the single crystal diamond, and a C-C bond is fractured by forming instant local high temperature so as to be carbonized to form graphite; (2) the laser beam is at the distance lt; 100 gt; the surface is at a certain depth and is scanned along the crystal orientation direction of # imgabs0 # or # imgabs1 #, and by controlling the position of a laser focal plane and the energy of the position, only modification points and a graphite layer are formed, or modification points are formed along lt; 111gt, 111gt; the surface-expanded cracks further form a crack expansion layer, and stress difference is generated between the crack expansion layer and the non-modified layer, so that the diamond layer is convenient to peel off. According to the method, arrangement and / or crack propagation of modified points can be accurately controlled, and stress distribution of a modified layer is optimized, so that high-precision diamond slicing is realized, and fragmentation and damage of a sample are avoided.

The invention belongs to the technical field of titanium alloy performance evaluation, and particularly relates to a method for evaluating the mechanical property of a lamellar structure TC18 titanium alloy, which comprises the following steps: acquiring crystal orientation information of alpha phase and beta phase of an undeformed TC18 titanium alloy, and analyzing the types of alpha variants and the proportion of each alpha variant; applying external force to the undeformed TC18 titanium alloy to enable the undeformed TC18 titanium alloy to generate 5% plastic deformation; obtaining crystal orientation information after deformation; a slippage trace generated by deformation is calibrated, and a slippage system and a Schmidt factor of each alpha variant are calculated according to the slippage trace; analyzing slippage transmission from the alpha phase to the beta matrix, and determining a slippage system started by the beta phase and a Schmidt factor of the slippage system; calculating a Berger vector and a slip transfer geometric compatibility factor remaining on an alpha / beta interface; and evaluating the yield strength of the TC18 titanium alloy according to the slip mode of the alpha variant in combination with the Schmidt factor of the alpha variant, the Schmidt factor of the beta phase in combination with the Berger vector of the alpha / beta interface and the geometric compatibility factor of slip transmission.

The present application discloses a structure of a trench-gate power MOSFET and a manufacturing method thereof. The structure includes: a second epitaxial layer; a strip-shaped P pillar, the length direction of the strip-shaped P pillar being parallel to the projection direction of the crystal orientation with the most obvious channel effect on the surface of the epitaxial material; a trench gate, including a trench, the trench being parallel to the length direction of the strip-shaped P pillar or perpendicular to the length direction of the strip-shaped P pillar, and filling a filler into the trench to manufacture the trench gate. When the length direction of the trench is parallel to the length direction of the strip-shaped P pillar, the trench is located directly above the strip-shaped P pillar and has the same width as the strip-shaped P pillar. When the length direction of the trench is perpendicular to the length direction of the strip-shaped P pillar, the width of the trench is not related to the strip-shaped P pillar; a surface source region. The advantage of the present application is that it can reduce the manufacturing steps and simplify the processing technology.

The invention relates to the technical field of vacuum physical vapor deposition, and provides a preparation method of a porous structure low-density IWO evaporation target material based on current calcination, which comprises the following steps: firstly, carrying out current calcination on raw materials, promoting WO3 crystal grains to preferentially grow along the 111 crystal orientation by utilizing a Joule effect, forming a long-range ordered structure, increasing the density after calcination, and then crushing to retain the crystal form, so as to obtain the low-density IWO evaporation target material with the porous structure. The preparation method comprises the following steps of: adding a 15wt% PVA ethanol solution, then carrying out ball-milling cold isostatic pressing molding, then carrying out distributed sintering, volatilizing PVA to form a porous framework through first-step sintering, carrying out second-step sintering to obtain crystal grains with a continuous porous structure, and finally carrying out RPD film coating under specific parameters, so that the powder falling rate is reduced, and the TCO film is good in uniformity; through the processes of current calcination, crushing, binder forming and sintering, on the premise that the low density of the target material is kept, cooperative control over directional connection of a porous structure and crystals is achieved, the powder falling rate is reduced by 60%, the regular porous structure and ordered crystal arrangement effectively disperse thermal stress, and structural collapse is avoided; the evaporation stability is improved, and the surface roughness is reduced to Ralt; the evaporation rate fluctuates by + / -5%, and the film uniformity reaches + / -2.0%.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention discloses a heavy-duty gas turbine blade creep fatigue life design method considering an anisotropic effect, and relates to the technical field of gas turbine key component creep fatigue life evaluation.The method comprises the steps that orientation factor parameters on characteristic orientation are determined based on tensile data on [001] crystal orientation; constructing a modified stress relaxation formula; constructing an anisotropic failure strain energy density equation based on the pure creep performance data and the orientation factor parameters, and determining an upper platform of failure inelastic strain energy density on [001] crystal orientation; further determining an upper platform of the failure inelastic strain energy density on the feature orientation; constructing a creep damage prediction model based on a modified stress relaxation formula and an anisotropic failure strain energy density equation; and adopting the creep damage prediction model to obtain the creep fatigue life of the anisotropic turbine blade material sample. The method meets the actual requirements of service life evaluation of the high-temperature part of the heavy-duty gas turbine.

The invention discloses a manufacturing method of a high-precision intelligent instrument measuring chip and a related device. The method comprises the following steps: firstly, performing multi-stage vacuum annealing and atomic layer reduction corrosion removal on lower-layer copper interconnection, introducing thermal-electric synergistic stress to convert a vacancy-rich layer into < 111 > preferred grains, and obtaining a bonding preparation surface with consistent crystal orientation; and then low-temperature copper-copper thermocompression bonding is completed in a controlled inert atmosphere, and interconnection initial thermoelectric force is intercepted in real time. The method comprises the following steps: establishing a vertical heat flow according to a space mapping power consumption sequence by driving an upper-layer functional region, collecting an interface voltage response, and extracting an interconnection Seebeck deviation through time sequence registration and differential processing; and according to a deviation result, synchronous fusing and parallel connection are implemented by using a programmable metal section of the rewiring layer, a thermoelectric balance interconnection network is constructed, and a zero drift calibration value is written in. According to the scheme, direction-dependent thermoelectromotive force is eliminated in a closed mode on the three levels of material, measurement and interconnection reconstruction, and therefore long-term zero drift stability of a measurement chain is guaranteed under the nanovolt-level noise condition.

The embodiment of the invention provides a piezoelectric element and a preparation method thereof, a piezoelectric device and electronic equipment, relates to the technical field of semiconductor devices, and is used for reducing the manufacturing error of the piezoelectric element and improving the uniformity of the piezoelectric element. The piezoelectric element includes a substrate, a vibration plate, and a plurality of piezoelectric elements. The substrate is provided with a plurality of cavities penetrating through the substrate in the thickness direction, and the cavities are sequentially arranged in the first direction of the substrate; the substrate is a monocrystalline silicon substrate. The diaphragm covers the substrate and the plurality of cavities. The value of the first direction is the result of the substrate; 100 gt; and the crystal orientation deviates within the range of + / -15 degrees. The value of E / (1-v2) of the vibration plate in the interval is small, and the value of E / (1-v2) is at the result of the substrate; 100 gt; and in the direction, the value of E / (1-v2) of the vibration plate is the minimum. Therefore, after the plurality of cavities are arranged along the first direction, the influence of diaphragm thickness deviation, diaphragm quality deviation and mechanical property deviation of the vibrating plate on the uniformity of the piezoelectric element is reduced.

The invention discloses a welding thermal stress simulation method, device, equipment and medium based on a crystal plasticity finite element, and relates to the technical field of welding thermal stress finite element simulation. The method comprises the steps that a sample is prepared according to a specific multi-phase metal material, and phase distribution and crystal orientation information of a two-dimensional plane of the material are obtained through a metallographic experiment; and a three-dimensional multi-grain model is constructed based on the two-dimensional information. According to the method, a crystal plastic constitutive model is adopted to describe the flowing behavior of the material at high temperature, crystal slippage and polycrystal interaction are considered, the influence on the material performance is reflected from the microstructure evolution level, and the problem that the influence on the macroscopic mechanical performance of a microstructure is difficult to capture in welding multiphase metal material simulation is solved; two-dimensional representation is obtained through a metallographic experiment, the Young modulus and rigidity matrix parameters are accurately calculated by combining forward stretching and shear simulation, the rigidity matrix precision is improved, a temperature field area is divided, stress evolution and residual stress are calculated by combining a thermal-elastic-plastic model, and the welding thermal stress calculation precision is improved.

The invention provides a preparation method of a plate-shaped glassy carbon electrode, which comprises the following steps: curing a resin raw material into a plate-shaped resin block, carbonizing in an inert atmosphere, and respectively introducing a nitrogen source and a boron source for doping operation to obtain a co-doped plate-shaped resin block precursor; placing the co-doped plate-shaped resin block between two porous graphite plates, and carrying out high-temperature treatment to obtain a glassy carbon matrix; and immersing the glassy carbon substrate into the adhesion layer solution to form an adhesion layer, transferring the adhesion layer into a deposition solution which comprises a bismuth-containing solution and a gold-containing solution, forming bismuth-gold nano-dots on the adhesion layer, and washing and drying the bismuth-gold nano-dots to obtain the plate-shaped glassy carbon electrode. Through directional arrangement of crystal orientations, the tantalum carbide coating achieves higher electrical conductivity and thermal conductivity. And the sensitivity and the service life of the plate-shaped glassy carbon electrode are obviously improved and prolonged.

To provide an aluminum alloy foil.SOLUTION: An aluminum alloy foil formed of an aluminum alloy comprising a composition which contains Fe: 0.8 mass% or more and 2.0 mass% or less, and Si: 0.2 mass% or less, and a balance Al and inevitable impurities is such that: 0.2%-yield-strength is 45 MPa or more, and extension is 15% or more; a ratio of an area ratio (Cu orientation / Cube orientation) of Cu orientation to an area ratio of Cube orientation in an area ratio of each orientation on the surface is 3 or more; an average crystal grain size of crystal grains surrounded by an orientation difference of 5° or more is 3.5 μm or less on the surface; and a ratio of crystal grain boundary lengths in the same visual field acquired by performing crystal orientation analysis by an EBSD method on the surface satisfies the following (1) formula. A crystal grain boundary length of crystal grains having an orientation difference of 2° or more and less than 15° / a crystal grain boundary length of crystal grains having an orientation difference of 15° or more>0.5...(1) formula.SELECTED DRAWING: Figure 1

A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of the second surface through relatively moving a focal point and the wafer along a first direction that is parallel to the crystal plane of the second surface and in which an acute angle formed between the first direction and the crystal orientation <100> is equal to or smaller than 5°, and separating the wafer into a first-surface-side wafer including devices and a second-surface-side wafer including no devices.

The invention provides a preparation method and application of a single crystal copper foil current collector for a negative-electrode-free lithium ion battery, and aims to improve the cycling stability and electrochemical performance of the battery. The preparation method comprises the following steps: (1) carrying out ultrasonic cleaning on the commercial copper foil by using hydrochloric acid, absolute ethyl alcohol and deionized water in sequence to remove surface pollutants; (2) a phosphoric acid and absolute ethyl alcohol mixed electrolyte is used for electrochemical polishing, and the surface smoothness and uniformity are improved; (3) performing high-temperature heat treatment on the sapphire substrate in high-purity argon to induce abnormal growth of crystal grains; (4) annealing in a reducing atmosphere of 1000-1100 DEG C to enhance the crystal orientation and crystallinity of Cu (111); and (5) rapidly cooling to room temperature, stabilizing the structure and preventing oxidation. When the obtained single crystal copper foil is used for the negative-electrode-free lithium battery, the single crystal copper foil is used as a negative electrode current collector to electrochemically deposit lithium metal and then is reassembled into the negative-electrode-free battery. The current collector is high in conductivity and stable in structure, lithium deposition uniformity can be remarkably improved, dendritic crystal growth is inhibited, the cycle life is prolonged, and safety is improved.

The invention provides a method for judging result; 111gt, 111gt; a method for judging whether the crystal orientation of the formed crystal bar is in an optimal corner area, lt; 111gt, 111gt; the invention discloses a formed crystal bar processing method and system and belongs to the field of semiconductors. The result; 111gt, 111gt; the forming crystal bar processing method comprises the following steps: providing a 1t; 111gt, 111gt; a crystal bar is formed, and the initial X crystal orientation deviation and the initial Y crystal orientation deviation of the crystal bar crystal orientation are obtained; and judging whether the crystal orientation of the crystal bar is in the optimal corner area or not, if the crystal orientation of the crystal bar is in the optimal corner area, processing the crystal bar, and if the crystal orientation of the crystal bar is not in the optimal corner area, adjusting the X-axis crystal orientation and the Y-axis crystal orientation of the crystal bar, so that the crystal bar is processed after the crystal orientation of the crystal bar is in the optimal corner area. According to the invention, the crystal orientation of the crystal bar is rotated from a random rotation angle to an optimal rotation angle range. Not only can the warp value of the sliced silicon wafer be reduced, but also the warp value can be kept stable.

The present invention provides a preparation method and application of a transparent conductive layer in a perovskite solar cell. The preparation method comprises the following steps: using a radio frequency sputtering method to deposit a layer of oxygen-rich transparent conductive seed layer on the surface of a battery substrate, and then using a direct current sputtering method to deposit a layer of transparent conductive thickening layer on the oxygen-rich transparent conductive seed layer to obtain a transparent conductive layer. The present invention makes the crystal orientation of the entire transparent conductive layer more regular. This regular crystal orientation is beneficial to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, the oxygen-rich transparent conductive seed layer can enhance the adhesion between the transparent conductive layer and the battery substrate, so that the crystals of the transparent conductive layer are better combined with the surface of the battery substrate; in addition, the oxygen-rich transparent conductive seed layer can not only better resist the erosion of external chemicals, but also prevent ion migration, which is very important for improving the reliability and service life of the device.

The invention discloses an ultrasonic testing device and method for the elastic constant Cij and crystal orientation of a single crystal material or workpiece. A special water immersion ultrasonic testing system used in the ultrasonic testing device comprises a manipulator, a water tank, a probe frame, a sample table and a probe, wherein the probe frame is connected with the tail end clamping device of the manipulator or the probe frame is the tail end clamping device of the manipulator; the sample table for placing a to-be-tested sample is positioned in the water tank; the probe is arranged on the probe frame; three-dimensional ultrasonic signals of various wave modes are excited in a workpiece, scanning signals of the three-dimensional ultrasonic signals are received, an omnidirectional sound time amplitude distribution image under polar coordinates is constructed according to the scanning signals, an ultrasonic anisotropic propagation actual sound field image is obtained, and ultrasonic sound velocities in all directions of a single crystal material are obtained through morphological methods such as image processing. And dual measurement of the elastic constant Cij and the crystal orientation of the single crystal material or the workpiece is realized through an inversion algorithm. According to the method, the elastic modulus and the crystal orientation of the single crystal material can be accurately and rapidly obtained on the premise that the crystal orientation does not need to be predicted, conditions and steps are simplified, and the testing time is shortened.

The invention relates to an aluminum-nickel-cobalt permanent magnet, a preparation method thereof and a precision part. The preparation method of the aluminum-nickel-cobalt permanent magnet comprises the following steps that raw materials are provided according to the stoichiometric ratio of the aluminum-nickel-cobalt permanent magnet, the raw materials are sequentially subjected to smelting treatment and directional solidification casting, and a casting is prepared; the casting is sequentially subjected to homogenization heat treatment, magnetic field heat treatment and tempering aging treatment, and the aluminum-nickel-cobalt permanent magnet is prepared; wherein the homogenization heat treatment is performed at the temperature of 1200-1350 DEG C in a heat preservation manner; in the step of magnetic field heat treatment, the direction of a magnetic field and the crystal orientation of the casting are in the same direction, and the crystal orientation of the casting is crystal brim in an X-ray diffraction pattern of the casting; 100 gt; and orienting. According to the method, the aluminum-nickel-cobalt permanent magnet which is relatively regular in structure, high in component uniformity and high in performance stability is obtained.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer and a functional electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer includes at least a first region and a second region with crystal orientations different from each other. The functional electrode overlaps the first region and the second region in plan view.

The invention discloses a single crystal boron nitride wafer batch preparation method based on a copper-nickel single crystal film and application, and belongs to the technical field of two-dimensional material preparation and nano electronic device manufacturing. The method comprises the following steps: forming a Cu80Ni20 (111) single crystal film on a c-plane sapphire substrate through magnetron sputtering and high-temperature annealing to serve as a growth substrate; carrying out thermal conversion treatment on the ammonia borane precursor to form a supply source system capable of stably releasing a borazine gas phase precursor; a porous structure quartz sleeve is adopted to regulate and control the release behavior of a precursor, and multi-wafer airflow homogenization control is realized in a CVD system through a quartz staggered wafer carrier; and carrying out epitaxial growth, and synchronously preparing more than 10 single crystal boron nitride wafers which are consistent in crystal orientation, smooth in surface and free of crystal boundaries in a single batch. According to the method, efficient, uniform and repeatable batch preparation of the high-quality monocrystal h-BN is realized, and the obtained wafer has atomic-scale flatness and excellent insulating property and is suitable for high-performance two-dimensional electronic devices, deep ultraviolet photoelectric devices and quantum device platforms.

The invention belongs to the technical field of titanium alloy material processing, and particularly relates to a preparation method of a titanium alloy bar with high crystal orientation uniformity. Comprising the following steps that S1, one-upsetting and one-drawing cogging is conducted in a single-phase area, and remelting and heat preservation are conducted after forging; s2, one-upsetting and one-drawing forging is carried out on the two-phase region, and after upsetting, temperature compensation and drawing-out are carried out; s3, single-phase region heat preservation, and stage cooling after heat preservation; s4, multi-heating-number two-upsetting and two-drawing forging is conducted on the two-phase region, and reversing drawing-out is conducted after upsetting; s5, upsetting and drawing out the two-phase region; s6, drawing out a two-phase region; and S7, forming a two-phase region. The TC11 titanium alloy bar prepared through the process is good in structure and crystal orientation uniformity and has good mechanical performance after heat treatment, the difference of the mechanical performance of all areas is small, and the TC11 titanium alloy bar can be applied to aerospace high-end parts with strict requirements for the alloy structure and performance.

The invention discloses an aqueous zinc ion battery for regulating and controlling zinc anode crystal orientation through a serine additive, which comprises an electrolyte containing a zinc salt and a serine additive, the crystal orientation of the zinc anode is dominated by the (101) crystal face; and the cathode and the zinc anode form an electrochemical reaction system. The preparation method of the aqueous zinc ion battery comprises the following steps: S1, preparing an electrolyte; s2, etching the zinc anode; s3, preparing a cathode; and S4, assembling the battery. The invention also discloses an application of the aqueous zinc ion battery in an energy storage system, an electric automobile or portable electronic equipment. According to the cell, through specific interaction between serine molecules and the surface of the zinc anode, zinc is induced to grow along a specific crystal face, the deposition behavior is optimized, meanwhile, side reactions are inhibited, the cycle life of the cell is remarkably prolonged, and the efficiency and safety of the cell are remarkably improved.

The invention belongs to the technical field of two-dimensional covalent organic framework materials, and particularly relates to a crystal orientation type covalent organic framework film, a preparation method and application. On the basis of an interfacial polymerization method, reaction kinetics are regulated and controlled by constructing a solvent buffer layer and introducing a reaction regulator, amino monomers containing pyridine nitrogen are orderly arranged on a water / oil two-phase interface through the cation-pi action after being protonated, aldehyde monomers dissolved in an oil phase are induced to have a Schiff base reaction with the amino monomers at the interface, and the pyridine nitrogen-containing amino monomers are obtained. And a crystal-oriented two-dimensional covalent organic framework film is formed at normal temperature. The self-supporting covalent organic framework film prepared by the method disclosed by the invention is controllable in thickness, has remarkable crystal orientation, is beneficial to carrier migration, and can be used as an electrocatalyst for electrocatalytic reduction of CO2.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention relates to a crystal orientation detection system, which comprises an LED surface type array, an illumination lens, a reflector, a microscope objective, a sample stage, a tube lens, an image sensor and a computer, and is characterized in that the LED surface type array comprises m * n LED light sources which are uniformly distributed along the radial direction and the annular direction and are independently controlled by the computer; the illumination lens, the reflector and the microscope objective form an illumination light path, the microscope objective and the tube lens form a microscopic imaging light path, the reflector refracts an illumination light beam to the microscope objective at an inclination angle of 45 degrees, and the computer synchronously controls gating of the LED face type array and image acquisition of the image sensor. According to the technical scheme, the LED light source is long in service life and low in energy consumption, a complex vacuum environment and high-voltage equipment are not needed, optical assemblies such as a reflecting mirror, a microobjective and a tube mirror are mature and easy to obtain, and the overall manufacturing cost of the system is only 10%-20% of that of an electron backscatter diffractometer (EBSD) which is the most commonly used crystal orientation detection device at present.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.