743 results about "Crystal orientation" patented technology

The invention discloses a single crystal turbine blade crystal orientation defect detection system based on adaptive optics, particularly relates to the field of nondestructive testing, and is used for solving the problem that thermal damage and signal consistency are difficult to consider in acoustic imaging of complex structural parts. Through partition energy threshold setting, dynamic pulse planning, photoacoustic processing and unified coordinate cross-subarea data synthesis, local thermal damage caused by excessive concentration of energy is effectively avoided in the material detection process, and the requirement for collecting high-bandwidth signals can be met in a large range. The signal-to-noise ratio and the detection efficiency are improved by regulating and controlling pulse energy and a scanning path, the amplitude comparability and the image coherence among regions are ensured through signal normalization correction and subregion image set splicing, high-resolution and comprehensive-coverage acoustic mapping is output, the crystal orientation defects of the single crystal turbine blade are positioned and evaluated, the detection precision is improved, the measurement period is shortened, and the method is suitable for large-scale popularization and application. And the method has an applicable value for aero-engine parts requiring rapid and high-precision nondestructive detection.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention discloses a heavy-duty gas turbine blade creep fatigue life design method considering an anisotropic effect, and relates to the technical field of gas turbine key component creep fatigue life evaluation.The method comprises the steps that orientation factor parameters on characteristic orientation are determined based on tensile data on [001] crystal orientation; constructing a modified stress relaxation formula; constructing an anisotropic failure strain energy density equation based on the pure creep performance data and the orientation factor parameters, and determining an upper platform of failure inelastic strain energy density on [001] crystal orientation; further determining an upper platform of the failure inelastic strain energy density on the feature orientation; constructing a creep damage prediction model based on a modified stress relaxation formula and an anisotropic failure strain energy density equation; and adopting the creep damage prediction model to obtain the creep fatigue life of the anisotropic turbine blade material sample. The method meets the actual requirements of service life evaluation of the high-temperature part of the heavy-duty gas turbine.

The invention discloses a manufacturing method of a high-precision intelligent instrument measuring chip and a related device. The method comprises the following steps: firstly, performing multi-stage vacuum annealing and atomic layer reduction corrosion removal on lower-layer copper interconnection, introducing thermal-electric synergistic stress to convert a vacancy-rich layer into < 111 > preferred grains, and obtaining a bonding preparation surface with consistent crystal orientation; and then low-temperature copper-copper thermocompression bonding is completed in a controlled inert atmosphere, and interconnection initial thermoelectric force is intercepted in real time. The method comprises the following steps: establishing a vertical heat flow according to a space mapping power consumption sequence by driving an upper-layer functional region, collecting an interface voltage response, and extracting an interconnection Seebeck deviation through time sequence registration and differential processing; and according to a deviation result, synchronous fusing and parallel connection are implemented by using a programmable metal section of the rewiring layer, a thermoelectric balance interconnection network is constructed, and a zero drift calibration value is written in. According to the scheme, direction-dependent thermoelectromotive force is eliminated in a closed mode on the three levels of material, measurement and interconnection reconstruction, and therefore long-term zero drift stability of a measurement chain is guaranteed under the nanovolt-level noise condition.

The invention discloses a welding thermal stress simulation method, device, equipment and medium based on a crystal plasticity finite element, and relates to the technical field of welding thermal stress finite element simulation. The method comprises the steps that a sample is prepared according to a specific multi-phase metal material, and phase distribution and crystal orientation information of a two-dimensional plane of the material are obtained through a metallographic experiment; and a three-dimensional multi-grain model is constructed based on the two-dimensional information. According to the method, a crystal plastic constitutive model is adopted to describe the flowing behavior of the material at high temperature, crystal slippage and polycrystal interaction are considered, the influence on the material performance is reflected from the microstructure evolution level, and the problem that the influence on the macroscopic mechanical performance of a microstructure is difficult to capture in welding multiphase metal material simulation is solved; two-dimensional representation is obtained through a metallographic experiment, the Young modulus and rigidity matrix parameters are accurately calculated by combining forward stretching and shear simulation, the rigidity matrix precision is improved, a temperature field area is divided, stress evolution and residual stress are calculated by combining a thermal-elastic-plastic model, and the welding thermal stress calculation precision is improved.

The invention provides a preparation method of a plate-shaped glassy carbon electrode, which comprises the following steps: curing a resin raw material into a plate-shaped resin block, carbonizing in an inert atmosphere, and respectively introducing a nitrogen source and a boron source for doping operation to obtain a co-doped plate-shaped resin block precursor; placing the co-doped plate-shaped resin block between two porous graphite plates, and carrying out high-temperature treatment to obtain a glassy carbon matrix; and immersing the glassy carbon substrate into the adhesion layer solution to form an adhesion layer, transferring the adhesion layer into a deposition solution which comprises a bismuth-containing solution and a gold-containing solution, forming bismuth-gold nano-dots on the adhesion layer, and washing and drying the bismuth-gold nano-dots to obtain the plate-shaped glassy carbon electrode. Through directional arrangement of crystal orientations, the tantalum carbide coating achieves higher electrical conductivity and thermal conductivity. And the sensitivity and the service life of the plate-shaped glassy carbon electrode are obviously improved and prolonged.

The invention discloses an ultrasonic testing device and method for the elastic constant Cij and crystal orientation of a single crystal material or workpiece. A special water immersion ultrasonic testing system used in the ultrasonic testing device comprises a manipulator, a water tank, a probe frame, a sample table and a probe, wherein the probe frame is connected with the tail end clamping device of the manipulator or the probe frame is the tail end clamping device of the manipulator; the sample table for placing a to-be-tested sample is positioned in the water tank; the probe is arranged on the probe frame; three-dimensional ultrasonic signals of various wave modes are excited in a workpiece, scanning signals of the three-dimensional ultrasonic signals are received, an omnidirectional sound time amplitude distribution image under polar coordinates is constructed according to the scanning signals, an ultrasonic anisotropic propagation actual sound field image is obtained, and ultrasonic sound velocities in all directions of a single crystal material are obtained through morphological methods such as image processing. And dual measurement of the elastic constant Cij and the crystal orientation of the single crystal material or the workpiece is realized through an inversion algorithm. According to the method, the elastic modulus and the crystal orientation of the single crystal material can be accurately and rapidly obtained on the premise that the crystal orientation does not need to be predicted, conditions and steps are simplified, and the testing time is shortened.

The invention relates to an aluminum-nickel-cobalt permanent magnet, a preparation method thereof and a precision part. The preparation method of the aluminum-nickel-cobalt permanent magnet comprises the following steps that raw materials are provided according to the stoichiometric ratio of the aluminum-nickel-cobalt permanent magnet, the raw materials are sequentially subjected to smelting treatment and directional solidification casting, and a casting is prepared; the casting is sequentially subjected to homogenization heat treatment, magnetic field heat treatment and tempering aging treatment, and the aluminum-nickel-cobalt permanent magnet is prepared; wherein the homogenization heat treatment is performed at the temperature of 1200-1350 DEG C in a heat preservation manner; in the step of magnetic field heat treatment, the direction of a magnetic field and the crystal orientation of the casting are in the same direction, and the crystal orientation of the casting is crystal brim in an X-ray diffraction pattern of the casting; 100 gt; and orienting. According to the method, the aluminum-nickel-cobalt permanent magnet which is relatively regular in structure, high in component uniformity and high in performance stability is obtained.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer and a functional electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer includes at least a first region and a second region with crystal orientations different from each other. The functional electrode overlaps the first region and the second region in plan view.

The invention discloses a single crystal boron nitride wafer batch preparation method based on a copper-nickel single crystal film and application, and belongs to the technical field of two-dimensional material preparation and nano electronic device manufacturing. The method comprises the following steps: forming a Cu80Ni20 (111) single crystal film on a c-plane sapphire substrate through magnetron sputtering and high-temperature annealing to serve as a growth substrate; carrying out thermal conversion treatment on the ammonia borane precursor to form a supply source system capable of stably releasing a borazine gas phase precursor; a porous structure quartz sleeve is adopted to regulate and control the release behavior of a precursor, and multi-wafer airflow homogenization control is realized in a CVD system through a quartz staggered wafer carrier; and carrying out epitaxial growth, and synchronously preparing more than 10 single crystal boron nitride wafers which are consistent in crystal orientation, smooth in surface and free of crystal boundaries in a single batch. According to the method, efficient, uniform and repeatable batch preparation of the high-quality monocrystal h-BN is realized, and the obtained wafer has atomic-scale flatness and excellent insulating property and is suitable for high-performance two-dimensional electronic devices, deep ultraviolet photoelectric devices and quantum device platforms.

The invention belongs to the technical field of titanium alloy material processing, and particularly relates to a preparation method of a titanium alloy bar with high crystal orientation uniformity. Comprising the following steps that S1, one-upsetting and one-drawing cogging is conducted in a single-phase area, and remelting and heat preservation are conducted after forging; s2, one-upsetting and one-drawing forging is carried out on the two-phase region, and after upsetting, temperature compensation and drawing-out are carried out; s3, single-phase region heat preservation, and stage cooling after heat preservation; s4, multi-heating-number two-upsetting and two-drawing forging is conducted on the two-phase region, and reversing drawing-out is conducted after upsetting; s5, upsetting and drawing out the two-phase region; s6, drawing out a two-phase region; and S7, forming a two-phase region. The TC11 titanium alloy bar prepared through the process is good in structure and crystal orientation uniformity and has good mechanical performance after heat treatment, the difference of the mechanical performance of all areas is small, and the TC11 titanium alloy bar can be applied to aerospace high-end parts with strict requirements for the alloy structure and performance.

The invention discloses an aqueous zinc ion battery for regulating and controlling zinc anode crystal orientation through a serine additive, which comprises an electrolyte containing a zinc salt and a serine additive, the crystal orientation of the zinc anode is dominated by the (101) crystal face; and the cathode and the zinc anode form an electrochemical reaction system. The preparation method of the aqueous zinc ion battery comprises the following steps: S1, preparing an electrolyte; s2, etching the zinc anode; s3, preparing a cathode; and S4, assembling the battery. The invention also discloses an application of the aqueous zinc ion battery in an energy storage system, an electric automobile or portable electronic equipment. According to the cell, through specific interaction between serine molecules and the surface of the zinc anode, zinc is induced to grow along a specific crystal face, the deposition behavior is optimized, meanwhile, side reactions are inhibited, the cycle life of the cell is remarkably prolonged, and the efficiency and safety of the cell are remarkably improved.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention relates to a crystal orientation detection system, which comprises an LED surface type array, an illumination lens, a reflector, a microscope objective, a sample stage, a tube lens, an image sensor and a computer, and is characterized in that the LED surface type array comprises m * n LED light sources which are uniformly distributed along the radial direction and the annular direction and are independently controlled by the computer; the illumination lens, the reflector and the microscope objective form an illumination light path, the microscope objective and the tube lens form a microscopic imaging light path, the reflector refracts an illumination light beam to the microscope objective at an inclination angle of 45 degrees, and the computer synchronously controls gating of the LED face type array and image acquisition of the image sensor. According to the technical scheme, the LED light source is long in service life and low in energy consumption, a complex vacuum environment and high-voltage equipment are not needed, optical assemblies such as a reflecting mirror, a microobjective and a tube mirror are mature and easy to obtain, and the overall manufacturing cost of the system is only 10%-20% of that of an electron backscatter diffractometer (EBSD) which is the most commonly used crystal orientation detection device at present.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.

The invention discloses a niobium-doped and carbon nanotube continuously coated lithium iron nickel phosphate material and a preparation method thereof, and belongs to the technical field of lithium ion battery positive electrode materials. The niobium source and the phosphorus source are added step by step, the concentration gradient distribution of the niobium element in the material is realized, and niobium is preferentially doped in the [100] crystal orientation through three-section temperature control sintering, so that the bulk phase conductivity and the lithium ion mobility are remarkably improved, and the capacity loss caused by excessive doping is avoided while the lattice structure is stabilized. In addition, the carbon nanotubes and the nitrogen-containing carbon source have a synergistic effect, Li-N-C covalent bonds are formed on the surface of the material, the interface stability is enhanced, the interface side reaction is effectively inhibited, and the surface conductivity is improved. According to the method, through double modification of doping and coating, the problems of low conductivity and poor cycling stability of the lithium iron nickel phosphate material are successfully solved, and the final product shows excellent rate capability and long cycle life.

The invention discloses a method for preparing fine-grain copper and copper alloy through pulsed magnetic field and rare earth adding composite regulation and control, and belongs to the technical field of copper and copper alloy material preparation. Graphite mold casting is adopted in the method, and the method comprises the specific steps that electrolytic copper with the purity larger than or equal to 99.95 wt% or a copper alloy with specific components is prepared as a matrix raw material; after smelting, adding pure lanthanum blocks and uniformly stirring; after the melt is poured into a preheating mold, a pulsed magnetic field is applied immediately for treatment, and the parameters of the magnetic field are as follows: the pulse voltage is 180-250 V, the frequency is 4.5-6.5 Hz, and the duration time is 15-20 minutes. According to the method, the heterogeneous nucleation effect of rare earth lanthanum is combined with the melt forced convection and dendritic crystal crushing effect caused by the pulsed magnetic field to synergistically refine a solidification structure and promote columnar crystal orientation equiaxed crystal transformation, so that a cast ingot with fine crystal grains is directly obtained in the casting stage, and the possibility is provided for simplifying the subsequent processing technology.

The invention provides a large-size semiconductor wafer and a preparation method and application thereof. The preparation method comprises the following steps: selecting a plurality of first semiconductor wafers, and modifying the first semiconductor wafers to obtain second semiconductor wafers; wherein the crystal orientation error of the first semiconductor wafer is smaller than a set error value, and the surface roughness of the second semiconductor wafer is smaller than set roughness; performing wafer alignment on the second semiconductor wafer along the crystal orientation, and performing direct bonding along the splicing surface at a set temperature to obtain a bonded wafer; performing post-processing on the bonded wafer to obtain a large-size semiconductor wafer; wherein the size of the large-size semiconductor wafer is at least larger than the sizes of the two first semiconductor wafers; the set temperature is less than 300 DEG C. According to the invention, direct bonding without an intermediate layer can be realized, and a semiconductor wafer which is continuous in structure, matched in crystal orientation and excellent in thermal performance is obtained; the process does not need an epitaxial process, and the process complexity and cost are reduced.

An acoustic resonator includes a substrate, a lithium tantalate layer disposed over the substrate, and a transducer on the lithium tantalate layer. The lithium tantalate layer has a crystalline orientation defined by a first Euler angle (λ), a second Euler angle (μ), and a third Euler angle (θ), and the first Euler angle (λ), the second Euler angle (μ), and the third Euler angle (θ) are chosen such that an acoustic plate mode (APM) is a dominant mode excited in the acoustic resonator.

The invention relates to the technical field of machining, and discloses a single-crystal high-temperature alloy grinding machining plastic deformation layer thickness identification method and system, and the method comprises the steps: collecting a port section image through the high-resolution imaging capability of a scanning electron microscope, and carrying out the preprocessing of the collected image, utilizing a Canny edge detection algorithm to accurately identify edge information in the image; performing crystal edge frame identification by using a Hough LinesP rectangular detection algorithm to calculate the crystal direction angle of each crystal in the image to distinguish the crystals in an undeformed area and a deformed area and the maximum depth value of the crystals in the corresponding area, and combining a preset crystal angle identification threshold value in a plastic deformation area after the single crystal high-temperature alloy material is ground and processed to identify the crystal edge frame of the single crystal high-temperature alloy material. And obtaining the thickness value of the plastic deformation area after the single-crystal high-temperature alloy material is ground. According to the method, the thickness value of the plastic deformation area of the ground single-crystal high-temperature alloy material can be accurately analyzed, and powerful technical support is provided for control and optimization of material machining quality.

A method is disclosed comprising providing a carbonaceous substrate; performing a chemical vapor deposition process on the carbonaceous substrate using a mixture of precursor gasses comprising a silicon precursor gas comprising trichlorosilane, and a carbon precursor gas selected from carbon-carbon double bond hydrocarbons and carbon-carbon triple bond hydrocarbons; and via said chemical vapor deposition process, forming a polycrystalline cubic silicon carbide layer with crystallographic orientation.

The invention discloses a PZT film with different preferred orientations induced by a Si (100) substrate and a preparation method, the PZT film comprises the Si substrate with the (100) crystal orientation and an induction layer, and the induction layer comprises a ZrO2 layer, a Pt layer and a LaNiO3 layer which are deposited in sequence; the Pt layer is one of a (200) crystal orientation Pt layer and a (111) crystal orientation Pt layer; the orientation of the PZT film corresponding to the Pt layer in the (200) crystal orientation is (001) or (110); the orientation of the PZT film corresponding to the Pt layer in the (111) crystal orientation is (111); the ZrO2 / Pt / LaNiO3 thin film is prepared on the silicon (100) substrate through a magnetron sputtering deposition method, crystal face orientation growth of Pt (200) and (111) is achieved, and the PZT thin film with single orientation of (001), (110) and (111) is successfully induced.

Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50arcsec.

According to the invention, heavy arsenic doping 1t is reduced; 111gt, 111gt; the invention relates to a crystal pulling method based on crystal orientation monocrystalline silicon section defect density and a monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon pulling. In the equal-diameter process, the liquid opening distance is constant, the pulling speed of the crystal bar is gradually reduced according to the length of the crystal bar, and the ratio (CR / SR) of crystal rotation / pot rotation is adjusted, so that heat conduction is uniformly transmitted in the radial direction of the crystal bar by controlling the growth rate of crystals, the temperature gradient of a solid-liquid interface and precipitation of oxides, and the heat conduction efficiency is improved. And in the crystal growth process, point defects such as interstitial atoms and vacancies have more opportunities to diffuse outwards, so that the generation of the point defects and impurity decorations is inhibited, the defect density of the section of the single crystal silicon rod is reduced, and the quality of the heavily arsenic-doped crystal rod is improved.

To provide an aluminum alloy foil.SOLUTION: This aluminum alloy foil comprises an aluminum alloy having a composition of Fe: 0.8 mass% mor more to 2.0 mass% or less, Si: 0.2 mass% or less, with the balance being Al and inevitable impurities; having an elongation of 10% or more in a 0° direction with respect to the rolling direction, an elongation of 15% or more in a 45° direction with respect to the rolling direction, and an elongation of 10% or more in a 90° direction with respect to the rolling direction; having an average crystal grain size of 3.5 μm or less of crystal grains surrounded by a misorientation of 5° or more on the surface; and, on the surface, satisfying the following formula (1) for the ratio of crystal grain boundary lengths obtained by performing crystal orientation analysis by an EBSD method in the same field of view. Formula (1): crystal grain boundary length of crystal grains having a misorientation of 2° or more and less than 15° / crystal grain boundary length of crystal grains having a misorientation of 15° or more>0.5.SELECTED DRAWING: Figure 1

Apparatuses and methods as described herein can be used to grow a β-Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The method can include bringing a seed crystal in contact with a Ga2O3 base melt, pulling the seed crystal to grow the β-Ga2O3 based single crystal, wherein the β-Ga2O3 based single crystal has a (010) crystallographic orientation as it is being grown, and cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40mm. In one embodiment, the method includes growing the scintillation crystal without defects.

The invention provides an antimony-based chalcogenide film with (hk1) dominant orientation and a preparation method and application thereof, and belongs to the technical field of semiconductor photovoltaic materials. According to the method, the crystal orientation of the antimony-based chalcogenide film is regulated and controlled by doping PbI2 in situ under the simple solution method (water bath or hydrothermal) deposition condition, and research results show that the solution method is adopted to introduce PbI2, so that the antimony-based chalcogenide film can be remarkably induced to preferentially grow along the (hk1) direction, grain boundary scattering and inter-chain potential barriers are effectively weakened, and the crystal orientation of the antimony-based chalcogenide film is improved. The carrier longitudinal migration and collection efficiency is improved, so that the VOC loss is reduced, and the final battery performance is improved; the method provided by the invention not only provides a new thought for preparing the high-orientation antimony-based chalcogenide film, but also lays a technical foundation for design and optimization of a bottom battery material in a future laminated battery.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention discloses a graphite material and a preparation method and application thereof, and belongs to the technical field of carbon materials and energy storage. The graphite material provided by the invention comprises a first pore region and a second pore region, the second hole area is located outside the first hole area; the aperture of the first hole region is less than or equal to 15nm; the aperture of the second hole area is larger than 15 nm and smaller than or equal to 50 nm. The graphite material has the gradient pore structure of the first pore region and the second pore region, and the pore structure is reasonable, so that the graphite material has relatively high crystal orientation degree, the ion diffusion energy barrier is effectively reduced, and the fast charging performance of the graphite material under high magnification is greatly improved.

The invention relates to a discrete dislocation dynamics modeling method considering twin crystal evolution, and the method comprises the steps: building a discrete dislocation dynamics geometric model based on a material constant of a target material and calculation information needed by simulation; a preset plastic deformation boundary condition is applied to the target material, and the microstructure change of the target material in the plastic deformation process is determined; when twin crystal nucleation exists in the target material, the growth speed of twin crystals is calculated, and the evolution size of the twin crystals is determined based on the growth speed; in the geometric model, according to the twin crystal evolution size, a twin crystal boundary of an elliptical structure is defined, a slip plane direction reconstruction algorithm is implemented in a twin crystal domain, and crystal orientation and a dislocation source position are updated in real time so as to simulate twin crystal growth; and after twin crystal growth is completed, iterative correction is performed on dislocation evolution in the target material according to the twin crystal growth state. Therefore, the authenticity of plastic deformation simulation of the material can be improved.