449 results about "Crystal orientation" patented technology

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention discloses a heavy-duty gas turbine blade creep fatigue life design method considering an anisotropic effect, and relates to the technical field of gas turbine key component creep fatigue life evaluation.The method comprises the steps that orientation factor parameters on characteristic orientation are determined based on tensile data on [001] crystal orientation; constructing a modified stress relaxation formula; constructing an anisotropic failure strain energy density equation based on the pure creep performance data and the orientation factor parameters, and determining an upper platform of failure inelastic strain energy density on [001] crystal orientation; further determining an upper platform of the failure inelastic strain energy density on the feature orientation; constructing a creep damage prediction model based on a modified stress relaxation formula and an anisotropic failure strain energy density equation; and adopting the creep damage prediction model to obtain the creep fatigue life of the anisotropic turbine blade material sample. The method meets the actual requirements of service life evaluation of the high-temperature part of the heavy-duty gas turbine.

The invention discloses a welding thermal stress simulation method, device, equipment and medium based on a crystal plasticity finite element, and relates to the technical field of welding thermal stress finite element simulation. The method comprises the steps that a sample is prepared according to a specific multi-phase metal material, and phase distribution and crystal orientation information of a two-dimensional plane of the material are obtained through a metallographic experiment; and a three-dimensional multi-grain model is constructed based on the two-dimensional information. According to the method, a crystal plastic constitutive model is adopted to describe the flowing behavior of the material at high temperature, crystal slippage and polycrystal interaction are considered, the influence on the material performance is reflected from the microstructure evolution level, and the problem that the influence on the macroscopic mechanical performance of a microstructure is difficult to capture in welding multiphase metal material simulation is solved; two-dimensional representation is obtained through a metallographic experiment, the Young modulus and rigidity matrix parameters are accurately calculated by combining forward stretching and shear simulation, the rigidity matrix precision is improved, a temperature field area is divided, stress evolution and residual stress are calculated by combining a thermal-elastic-plastic model, and the welding thermal stress calculation precision is improved.

The invention provides a preparation method of a plate-shaped glassy carbon electrode, which comprises the following steps: curing a resin raw material into a plate-shaped resin block, carbonizing in an inert atmosphere, and respectively introducing a nitrogen source and a boron source for doping operation to obtain a co-doped plate-shaped resin block precursor; placing the co-doped plate-shaped resin block between two porous graphite plates, and carrying out high-temperature treatment to obtain a glassy carbon matrix; and immersing the glassy carbon substrate into the adhesion layer solution to form an adhesion layer, transferring the adhesion layer into a deposition solution which comprises a bismuth-containing solution and a gold-containing solution, forming bismuth-gold nano-dots on the adhesion layer, and washing and drying the bismuth-gold nano-dots to obtain the plate-shaped glassy carbon electrode. Through directional arrangement of crystal orientations, the tantalum carbide coating achieves higher electrical conductivity and thermal conductivity. And the sensitivity and the service life of the plate-shaped glassy carbon electrode are obviously improved and prolonged.

The invention belongs to the technical field of titanium alloy material processing, and particularly relates to a preparation method of a titanium alloy bar with high crystal orientation uniformity. Comprising the following steps that S1, one-upsetting and one-drawing cogging is conducted in a single-phase area, and remelting and heat preservation are conducted after forging; s2, one-upsetting and one-drawing forging is carried out on the two-phase region, and after upsetting, temperature compensation and drawing-out are carried out; s3, single-phase region heat preservation, and stage cooling after heat preservation; s4, multi-heating-number two-upsetting and two-drawing forging is conducted on the two-phase region, and reversing drawing-out is conducted after upsetting; s5, upsetting and drawing out the two-phase region; s6, drawing out a two-phase region; and S7, forming a two-phase region. The TC11 titanium alloy bar prepared through the process is good in structure and crystal orientation uniformity and has good mechanical performance after heat treatment, the difference of the mechanical performance of all areas is small, and the TC11 titanium alloy bar can be applied to aerospace high-end parts with strict requirements for the alloy structure and performance.

The invention relates to a crystal orientation detection system, which comprises an LED surface type array, an illumination lens, a reflector, a microscope objective, a sample stage, a tube lens, an image sensor and a computer, and is characterized in that the LED surface type array comprises m * n LED light sources which are uniformly distributed along the radial direction and the annular direction and are independently controlled by the computer; the illumination lens, the reflector and the microscope objective form an illumination light path, the microscope objective and the tube lens form a microscopic imaging light path, the reflector refracts an illumination light beam to the microscope objective at an inclination angle of 45 degrees, and the computer synchronously controls gating of the LED face type array and image acquisition of the image sensor. According to the technical scheme, the LED light source is long in service life and low in energy consumption, a complex vacuum environment and high-voltage equipment are not needed, optical assemblies such as a reflecting mirror, a microobjective and a tube mirror are mature and easy to obtain, and the overall manufacturing cost of the system is only 10%-20% of that of an electron backscatter diffractometer (EBSD) which is the most commonly used crystal orientation detection device at present.

The invention discloses a preparation method of a large-thickness (111) crystal orientation monocrystal diamond for a semiconductor, and aims to solve the problems of low growth rate and poor growth quality of the (111) crystal orientation diamond. The preparation method of the monocrystal diamond comprises the following steps: S1, heating and soaking a seed wafer in mixed acid; s2, performing etching treatment on the seed wafer by using hydrogen plasma; s3, oxygen is introduced into the vacuum cavity; s4, methane continues to be introduced into the vacuum cavity, the volume concentration of methane, hydrogen and oxygen is controlled, and microwave plasma chemical vapor deposition growth is carried out; s5, controlling the growth time; and S6, polycrystals on the surface of the blank are cut off. According to the method, the MPCVD process is adopted, and parameters such as gas concentration, temperature, pressure intensity and microwave energy in the growth process are controlled, so that homoepitaxial growth of the high-quality single crystal (111) crystal orientation diamond is realized, the production cost of the (111) crystal orientation diamond is reduced, and the realization of mass production of the (111) crystal orientation single crystal diamond is facilitated.

The invention discloses a niobium-doped and carbon nanotube continuously coated lithium iron nickel phosphate material and a preparation method thereof, and belongs to the technical field of lithium ion battery positive electrode materials. The niobium source and the phosphorus source are added step by step, the concentration gradient distribution of the niobium element in the material is realized, and niobium is preferentially doped in the [100] crystal orientation through three-section temperature control sintering, so that the bulk phase conductivity and the lithium ion mobility are remarkably improved, and the capacity loss caused by excessive doping is avoided while the lattice structure is stabilized. In addition, the carbon nanotubes and the nitrogen-containing carbon source have a synergistic effect, Li-N-C covalent bonds are formed on the surface of the material, the interface stability is enhanced, the interface side reaction is effectively inhibited, and the surface conductivity is improved. According to the method, through double modification of doping and coating, the problems of low conductivity and poor cycling stability of the lithium iron nickel phosphate material are successfully solved, and the final product shows excellent rate capability and long cycle life.

The invention discloses a method for preparing fine-grain copper and copper alloy through pulsed magnetic field and rare earth adding composite regulation and control, and belongs to the technical field of copper and copper alloy material preparation. Graphite mold casting is adopted in the method, and the method comprises the specific steps that electrolytic copper with the purity larger than or equal to 99.95 wt% or a copper alloy with specific components is prepared as a matrix raw material; after smelting, adding pure lanthanum blocks and uniformly stirring; after the melt is poured into a preheating mold, a pulsed magnetic field is applied immediately for treatment, and the parameters of the magnetic field are as follows: the pulse voltage is 180-250 V, the frequency is 4.5-6.5 Hz, and the duration time is 15-20 minutes. According to the method, the heterogeneous nucleation effect of rare earth lanthanum is combined with the melt forced convection and dendritic crystal crushing effect caused by the pulsed magnetic field to synergistically refine a solidification structure and promote columnar crystal orientation equiaxed crystal transformation, so that a cast ingot with fine crystal grains is directly obtained in the casting stage, and the possibility is provided for simplifying the subsequent processing technology.

The invention provides a large-size semiconductor wafer and a preparation method and application thereof. The preparation method comprises the following steps: selecting a plurality of first semiconductor wafers, and modifying the first semiconductor wafers to obtain second semiconductor wafers; wherein the crystal orientation error of the first semiconductor wafer is smaller than a set error value, and the surface roughness of the second semiconductor wafer is smaller than set roughness; performing wafer alignment on the second semiconductor wafer along the crystal orientation, and performing direct bonding along the splicing surface at a set temperature to obtain a bonded wafer; performing post-processing on the bonded wafer to obtain a large-size semiconductor wafer; wherein the size of the large-size semiconductor wafer is at least larger than the sizes of the two first semiconductor wafers; the set temperature is less than 300 DEG C. According to the invention, direct bonding without an intermediate layer can be realized, and a semiconductor wafer which is continuous in structure, matched in crystal orientation and excellent in thermal performance is obtained; the process does not need an epitaxial process, and the process complexity and cost are reduced.

Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50arcsec.

Apparatuses and methods as described herein can be used to grow a β-Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The method can include bringing a seed crystal in contact with a Ga2O3 base melt, pulling the seed crystal to grow the β-Ga2O3 based single crystal, wherein the β-Ga2O3 based single crystal has a (010) crystallographic orientation as it is being grown, and cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40mm. In one embodiment, the method includes growing the scintillation crystal without defects.

The invention provides an antimony-based chalcogenide film with (hk1) dominant orientation and a preparation method and application thereof, and belongs to the technical field of semiconductor photovoltaic materials. According to the method, the crystal orientation of the antimony-based chalcogenide film is regulated and controlled by doping PbI2 in situ under the simple solution method (water bath or hydrothermal) deposition condition, and research results show that the solution method is adopted to introduce PbI2, so that the antimony-based chalcogenide film can be remarkably induced to preferentially grow along the (hk1) direction, grain boundary scattering and inter-chain potential barriers are effectively weakened, and the crystal orientation of the antimony-based chalcogenide film is improved. The carrier longitudinal migration and collection efficiency is improved, so that the VOC loss is reduced, and the final battery performance is improved; the method provided by the invention not only provides a new thought for preparing the high-orientation antimony-based chalcogenide film, but also lays a technical foundation for design and optimization of a bottom battery material in a future laminated battery.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention discloses a graphite material and a preparation method and application thereof, and belongs to the technical field of carbon materials and energy storage. The graphite material provided by the invention comprises a first pore region and a second pore region, the second hole area is located outside the first hole area; the aperture of the first hole region is less than or equal to 15nm; the aperture of the second hole area is larger than 15 nm and smaller than or equal to 50 nm. The graphite material has the gradient pore structure of the first pore region and the second pore region, and the pore structure is reasonable, so that the graphite material has relatively high crystal orientation degree, the ion diffusion energy barrier is effectively reduced, and the fast charging performance of the graphite material under high magnification is greatly improved.

Provided are: lithium-excess positive electrode active material particles having a stabilized crystal structure; and a secondary battery including the particles. These positive electrode active material particles comprise lithium, a transition metal M (M is one or more selected from Mn, Cr, Mo, Nb, V, Fe, Ni, Ti, and Ru), oxygen, magnesium, and fluorine, wherein: Li / M (atomic ratio) in the positive electrode active material particles is more than 1; the positive electrode active material particles each have a core, a barrier film outside the core, and a shell outside the barrier film; more magnesium and fluorine are detected in the shell than in the core; crystalline orientations of the core and the shell substantially coincide with each other; and the shell has a fluoride.

A method for forming a semiconductor device is provided. In one embodiment, a method includes forming a plurality of fin structures each including alternating channel semiconductor portions and sacrificial dielectric portions over a top surface of a substrate having a (110) crystal orientation, where sidewalls of the channel semiconductor portions of each of adjacent fin structures in the plurality of fin structures are exposed by source / drain trenches, where the sacrificial dielectric portions are exposed by source / drain trenches. The top surface, sidewall surface, and bottom surface of the channel semiconductor portion of the adjacent fin structure have a (110) crystal orientation. The method further includes depositing an epitaxial semiconductor region at a bottom of the source / drain trench; forming a bottom dielectric feature over the epitaxial semiconductor region; and epitaxially growing a source / drain feature from a sidewall surface of the channel semiconductor portion of the adjacent fin structure to fill the source / drain trench. Some embodiments of the present application also relate to a semiconductor device and a method of forming the same.

An example thin-film transistor includes a silicon-based substrate and a source and drain at the silicon-based substrate. The source and drain are spaced apart by a gap. The thin-film transistor further includes a nucleation layer in contact with at least the silicon-based substrate within the gap, and a body of channel material in contact with the nucleation layer. The channel material is nanocrystalline tin oxide (SnO2). The nucleation layer includes a nucleation element that may reduce thermally induced stress between the silicon-based substrate and the body of channel material. The nucleation element may also promote a preferred crystal orientation for the channel material.

The invention relates to a novel high-precision laser etching method for a high-thermal-conductivity metal film on the surface of an organic material. According to the principle that the arrangement mode of atoms in crystal lattices is determined by crystal defects, crystal sizes and crystal orientations in metal materials, so that the transfer mode of heat energy through phonons and electrons is influenced, and by regulating and controlling the crystal structures of the metal materials, the transverse heat conduction area of instantaneous laser energy in the metal film is reduced; therefore, the energy longitudinally conducted to the interface of the metal film and the substrate under the action of the laser is increased, so that the temperature of the interface of the laser spot edge area is higher than the thermal decomposition temperature of the substrate material, and the solid stripping phenomenon is generated. The method provided by the invention solves the problem that high-thermal-conductivity metal subjected to laser etching is easy to remain at present, improves the precision of a laser etching pattern, and has scientific and industrial practical potential.

The invention discloses a bark crack bionic lattice structure design method based on a three-period minimal curved surface, a bark crack bionic lattice structure and a bone implantation stent. The bark crack bionic lattice structure design method comprises the following steps: S1, constructing a parent lattice structure by adopting a three-period minimal curved surface function; s2, crack characteristics are constructed in the matrix lattice structure through a bidirectional offset contour surface method, a bark crack bionic lattice structure is formed, and the crack size and the relative density are controlled through offset parameters; s3, the relative density of the bark crack bionic lattice structure is calculated through triple integration, and the volume fraction of the generated model is controlled; and S4, crystal orientation design and rotation angle design are conducted on the bark crack bionic lattice structure, so that the elastic modulus and mass transfer performance of the bark crack bionic lattice structure are regulated and controlled.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a monocrystalline silicon preparation method for improving forward voltage drop of a power device, the power device and monocrystalline silicon, and the method comprises the following steps: when a monocrystalline silicon rod is drawn by a czochralski method, the growth crystal orientation is 1t by controlling crystal pulling parameters and cooling parameters in an equal-diameter process; 111gt, 111gt; the silicon single crystal rod, the crystal pulling parameters and the cooling parameters are configured as follows: interstitial oxygen precipitation can be inhibited to form silicon dioxide precipitation, so that the volume microdefect density in the grown silicon single crystal is lower than a preset threshold value, and the method provided by the invention inhibits the interstitial oxygen precipitation process by reasonably configuring the crystal pulling parameters and the cooling parameters, so that the yield of the silicon single crystal is improved. According to the present invention, the silicon dioxide deposition formation is reduced, such that the volume micro-defect density in the grown monocrystalline silicon is lower than the preset threshold value, and when the monocrystalline silicon is applied to the ultra-fast recovery diode product, the forward voltage drop value VF can be reduced so as to be within the range of 1.3-1.7 V so as to meet the customer requirements.

A composite structure for manufacturing microelectronic components, includes a monocrystalline thin film on a support substrate made of polycrystalline silicon carbide, the support substrate having, on each of its faces, a preferential crystalline orientation on each of its faces, according to which: a texture coefficient C422 is less than 40%, and the sum of texture coefficients C220+C200+C400 is greater than 50%, preferably greater than 80%. A method is used to manufacture such a composite structure.

The present invention provides a transistor having favorable electrical characteristics. A semiconductor device according to the present invention includes first through third conductive layers, a semiconductor layer, and first and second insulating layers. The first insulating layer is located on the first conductive layer and has an opening that extends to the first conductive layer. The second conductive layer is located on the first insulating layer. The semiconductor layer includes: a portion in contact with the upper surface and side surface of the second conductive layer; a portion in contact with the side surface of the first insulating layer within the opening; and a portion in contact with the upper surface of the first conductive layer within the opening. The second insulating layer covers the semiconductor layer within the opening. The third conductive layer covers the second insulating layer within the opening. Furthermore, the first conductive layer and the second conductive layer contain indium. In addition, the semiconductor layer contains indium oxide, no grain boundaries are observed in the portion in contact with the first insulating layer in a cross section parallel to the height direction of the opening, and the crystal orientations of two or more portions in contact with the first insulating layer coincide.

This invention discloses a method for repairing defects in single-crystal diamond, comprising removing the defective portion to form a pit and preparing a defect-free patch. After cleaning, the patch is filled into the pit, ensuring that the crystal orientation of the patch is consistent with that of the diamond surrounding the pit. The single-crystal diamond with the patch then is fed into a growth system for growth to obtain a single-crystal diamond with the defect repaired. Compared with existing technologies, this invention not only has high repair efficiency but can also effectively repair defects with a side length of 2.0 mm or more.

A method for forming a semiconductor structure includes: providing a substrate; forming a gate structure on the substrate; forming grooves in the substrate on both sides of the gate structure, the substrate at the bottom of the grooves having a first crystal orientation; and forming source / drain doped layers in the grooves using an epitaxial process. The silicon source used in the epitaxial process includes a first silicon source and a second silicon source. The first silicon source is suitable for selective epitaxial growth of the source / drain doped layers, and the second silicon source is suitable for increasing the epitaxial growth rate of the source / drain doped layers along the first crystal orientation. In this embodiment, the second silicon source is suitable for increasing the epitaxial growth rate of the source / drain doped layers along the first crystal orientation, which is beneficial for increasing the thickness of the source / drain doped layers located at the bottom of the grooves, especially increasing the bottom thickness of the source / drain doped layers in long-channel devices. This makes it less likely for the source / drain contact plug to penetrate the source / drain doped layers, preventing the source / drain contact plug from contacting the high-resistivity region below the source / drain doped layers, thereby improving the electrical performance of the semiconductor structure.

The invention provides a transfer method of an epitaxial layer, a heterogeneous device wafer and a bonding integration method and bonding equipment of the heterogeneous device wafer. The transfer method comprises the following steps: the crystal orientation is lt; 111gt, 111gt; epitaxially growing a GaN layer on the first silicon substrate; setting the GaN layer and the crystal orientation as lt; 100 gt; and bonding the first silicon substrate and the second silicon substrate, and then removing the first silicon substrate to complete transfer. According to the invention, the crystal orientation is lt; 111gt, 111gt; the first silicon substrate is used as a temporary epitaxial carrier, the advantage of high matching degree with a GaN lattice can be fully utilized, a high-quality GaN film is grown, and then bonding and substrate removal processes are combined to be transferred to the crystal orientation of lt; 100 gt; on the first silicon substrate and the second silicon substrate, the design solves the contradiction of substrate performance, the fragment rate in the subsequent process can be obviously reduced, the smaller total thickness deviation can be realized, the stress accumulated in the epitaxial growth stage in the transfer process can be effectively released, and the negative influence of stress residue on the device performance is avoided.

The present invention provides a negative plate, comprising: a current collector having a first coating region as a main body and a second coating region located on at least one side of the first coating region, the first coating region being coated with an active slurry containing first graphite, the second coating region being coated with second graphite, the O / I of the second graphite being greater than the O / I of the first graphite, where O represents crystal orientation, and O represents crystal orientation; i represents the structure defect degree. By adopting the technical scheme, the second graphite instead of the first graphite is adopted in the second coating area, although the capacity of the battery is slightly reduced, the circulating swelling amount of the edge area of the negative plate can be obviously reduced, so that the pressing risk which is borne by the edge plate of the laminated core due to the limitation of the space of the shell and is continuously accumulated along with the increase of the number of circulating turns is reduced, and the service life of the battery is prolonged. Finally, the diving phenomenon of rapid attenuation of the capacity of the battery cell is relieved, and the overall cycle life of the battery is guaranteed. The invention also provides a negative plate and a lithium battery comprising the negative plate.

To form more devices.SOLUTION: A method for processing a semiconductor wafer includes a wafer preparation step 101 for preparing a semiconductor wafer having no notch part and a circular horizontal cross-sectional shape, a photosensitive agent layer formation step 102 for coating a photosensitive agent onto the semiconductor wafer, and forming a photosensitive agent layer, an exposure step 105 for irradiating the photosensitive agent layer with light through a mask and a light modulator, and transferring a pattern onto the photosensitive agent layer, and a crystal orientation detection step 103 for detecting a crystal orientation of the semiconductor wafer, before the exposure step 105 is performed, wherein the exposure step 105 positions the semiconductor wafer to the pattern in a predetermined direction on the basis of the crystal orientation of the semiconductor wafer.SELECTED DRAWING: Figure 3

This invention relates to a highly efficient automated splicing system for indium antimonide short crystal rods, belonging to the field of semiconductor material processing technology. Specifically, it relates to a highly efficient bonding and slicing technology for multiple short crystal rods of indium antimonide, indium phosphide, and other materials. The system includes a crystal rod conveying unit, a crystal orientation and size measurement unit, a splicing planning module, a buffer plate selection and adhesive application unit, and a crystal rod posture adjustment and bonding unit. This system achieves full automation from crystal rod loading to long rod assembly unloading. One operator can simultaneously manage three machines, requiring only periodic material replenishment; this reduces labor requirements by more than 80% compared to traditional manual splicing.

The invention relates to the technical field of wireless communication, and provides a surface acoustic wave device which comprises a supporting substrate, a piezoelectric substrate and an interdigital transducer. The supporting substrate is made of a sapphire material; the interdigital transducer comprises a first interdigital electrode, a second interdigital electrode, a first bus bar and a second bus bar, wherein the first bus bar and the second bus bar are oppositely arranged. The first interdigital electrode is separated from the second interdigital electrode and the second bus bar, and the first interdigital electrode and the second interdigital electrode are opposite in electrical polarity; the arrangement direction of the first interdigital electrodes and the second interdigital electrodes is a sound wave propagation direction; wherein the sapphire is r-face sapphire, crystal arrangement of the r-face sapphire is in a regular hexagonal prism shape, the growth axis of the r-face sapphire is perpendicular to the bottom face of the r-face sapphire, and the [2-1-1] crystal orientation of the r-face sapphire is perpendicular to the orthographic projection of the growth axis on the r face and is parallel to the sound wave propagation direction. The surface acoustic wave device provided by the invention can realize higher frequency, high reliability and higher power.