1632 results about "Piezoelectric thin films" patented technology

A piezoelectric filter and other electronic components are constructed such that the accuracy of frequency adjustment can be increased and an improvement in efficiency of the adjustment operation can be achieved. The piezoelectric filter includes a plurality of piezoelectric resonators including a substrate and a vibration portion provided on the substrate, the vibration portion having a structure in which the top and bottom surfaces of a thin film portion including at least one piezoelectric thin film are sandwiched between at least a pair of an upper electrode and a lower electrode facing each other, wherein the upper electrode of a predetermined piezoelectric resonator is made of a material having susceptibility to etching that is different from that of the upper electrode of the other piezoelectric resonator.

A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO₂ and Al₂O₃, respectively, Al₂O₃ having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

The invention relates to a system and a method for performing impact loading on a micro test piece and measuring dynamic mechanical property. The method comprises the following steps of: instantly accelerating a bullet by using an electromagnetic pulse launch technology and launching the bullet at high speed; transmitting a stretching stress wave generated by collision of the bullet to the micro test piece by using a separated Hopkinson bar technology so as to generate the impact loading on the micro test piece; recording strain data of an input bar and an output bar, and acquiring an enlarged surface dynamic deformation image of the micro test piece; analyzing and obtaining a stress strain curve of the micro test piece subjected to the impact loading having different strain rates; and analyzing the surface dynamic deformation image of the micro test piece and obtaining a distribution of a bidimensional displacement field and a strain field during dynamic impact loading of the micro test piece. By the system and the method, the problem of research on the dynamic mechanical property of a micro electro mechanical system (MEMS), and membrane materials such as piezoelectric thin films, ferroelectric thin films and the like is solved.

A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.

An ultrasound transducer manufactured by using a micromachining process comprises: a first electrode into which a control signal for transmitting ultrasound is input; a substrate on which the first electrode is formed; a second electrode that is a ground electrode facing the first electrode with a prescribed space between the first and second electrodes; a membrane on which the second electrode is formed and which vibrates and generates the ultrasound when a voltage is applied between the first and second electrodes; a piezoelectric film contacting the membrane; and a third electrode electrically continuous to the piezoelectric film.

A piezoelectric thin-film resonator includes a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that the concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film; a first electrode; a second electrode facing the first electrode across the piezoelectric thin film; and a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes.

A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

A varifocal optical system includes a substantially circular membrane deposited on a substrate, and a ring-shaped PZT thin film deposited on the outer portion of the circular membrane. The membrane may be a MEMS-micromachined membrane, made of thermal oxide, polysilicon, Z_rO₂ and S_iO₂. The membrane is initially in a buckled state, and may function as a mirror or a lens. Application of an electric voltage between an inner and outer electrode on the piezoelectric thin film induces a lateral strain on the PZT thin film, thereby altering the curvature of the membrane, and thus its focal length. Focal length tuning speeds as high as 1 MHz have been demonstrated. Tuning ranges of several hundred microns have been attained. The varifocal optical system can be used in many applications that require rapid focal length tuning, such as optical switching, scanning confocal microscopy, and vibration compensation in optical storage disks.

A thin-film piezoelectric resonator including a piezoelectric thin film having piezoelectric characteristic, and an upper electrode and a lower electrode arranged on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film, wherein: each of the upper electrode and the lower electrode includes a resonant portion, and a lead-out portion; and the electrode thickness of at least one part of the lead-out portion in at least one of the upper electrode and the lower electrode is larger than the electrode thickness of the resonant portion formed to be continued from the lead-out portion.

To manufacture a compact and high-performance thin-film piezoelectric bimorph element at low cost, first and second piezoelectric thin films (2, 3) are formed by sputtering on the both surfaces of a metal thin plate (1) which are opposing relation to each other along the thickness thereof, while the respective states of polarizations of the first and second piezoelectric thin films (2, 3) are controlled. A pair of electrode films (5) are formed on the respective surfaces of the first and second piezoelectric thin films (2, 3) opposite to the metal thin plate (1).

A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (Na_xK_yLi_z)NbO₃ (0<x<1, 0<y<1, 0≦z<1, x+y+z=1), and a high voltage-withstand dielectric that has a dielectric strength voltage greater than that of the dielectric thin film.

The invention discloses a piezoelectric film bulk acoustic resonator and a preparation method thereof. The resonator comprises a substrate, an air cavity, a bottom electrode layer, a piezoelectric layer and a top electrode layer, wherein grapheme is used as the electrode layers of the device; a support layer is not needed in the structure of the device, and the air cavity is formed between the grapheme bottom electrode layer and a groove of the substrate; the piezoelectric layer is arranged on the bottom electrode layer, and the top electrode layer is arranged on the piezoelectric layer. A preparation process of a sacrificial layer is adopted, so the dependence of the traditional process on high-precision chemical-mechanical polishing equipment is overcome, the grinding time is shortened, and the flat surface of sacrificial layer is quickly obtained. The piezoelectric film bulk acoustic resonator has the advantages that the structure is novel, the high Q (quality) value and high electromechanical coupling coefficient can be obtained, and the piezoelectric film bulk acoustic resonator can be applied to the manufacturing of filters, duplexes and multiplexes in subsequent radio frequency communication systems, and can also be combined with different sensitive films to manufacture high-performance sensors.