The invention relates to a preparation method of a single-
crystal piezoelectric film bulk acoustic
resonator, and relates to the field of
semiconductor device production processes, and the preparation method comprises the following steps: S1, preparing a single-
crystal piezoelectric film and an
electrode layer on a first substrate; s2, patterning the
single crystal piezoelectric film and the
electrode layer; s3, temporarily bonding the supporting slide glass with the first substrate through the adhesion layer; s4, removing the first substrate; s5,
etching a photoetching through hole in the thin film body; s6, depositing
metal to form a connecting part and a lower
electrode; s7,
processing a cavity structure on the second substrate; s8, preparing a
transition layer on the surface of the second substrate; s9, removing the first part; s10, preparing a bonding layer on the second substrate; s11,
processing a communication hole in the bonding layer and removing the second part; s12, bonding the lower electrode and the second substrate; and S13, removing the supporting slide glass and the adhesion layer. The method has the advantages that the bonding material uniformly covers the surface of the second substrate and the cavity structure, weak points are prevented from being formed at the cavity structure, and the reliability and stability of the
bonding process are remarkably improved.