2709results about "Piezoelectric/electrostrictive device material selection" patented technology

A piezoelectric device ensures resistance to molding without an increase in costs and includes an elemental substrate having a piezoelectric element and a conductive pattern electrically connected to the piezoelectric element; and insulating members disposed on the elemental substrate and surrounding the piezoelectric element leaving a space around the piezoelectric element. The insulating members have an internal conductor connected to the conductive pattern and extending apart from the elemental substrate. The internal conductor has expanded portions expanding in a direction intersecting the wiring direction of the internal conductor or a detour portion deviating from the wiring direction. The expanded portions or the detour portion crosses the boundary of a sealed space formed around the piezoelectric element.

A piezoelectric device ensures resistance to molding without an increase in costs and includes an elemental substrate having a piezoelectric element and a conductive pattern electrically connected to the piezoelectric element; and insulating members disposed on the elemental substrate and surrounding the piezoelectric element leaving a space around the piezoelectric element. The insulating members have an internal conductor connected to the conductive pattern and extending apart from the elemental substrate. The internal conductor has expanded portions expanding in a direction intersecting the wiring direction of the internal conductor or a detour portion deviating from the wiring direction. The expanded portions or the detour portion crosses the boundary of a sealed space formed around the piezoelectric element.

An electronic component includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a cavity that penetrates from the first surface to the second surface of the semiconductor substrate, and an electrical mechanical element that has a movable portion formed above the first surface of the semiconductor substrate so that the movable portion is arranged above the cavity. The electronic component further includes an electric conduction plug, which penetrates from the first surface to the second surface of the semiconductor substrate, and which is electrically connected to the electrical mechanical element.

The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has a single layer of acoustic decoupling material having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength in the acoustic decoupling material of an acoustic wave having a frequency equal to the center frequency. The acoustic decoupling material comprises plastic. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Surface acoustic wave device having a high k<2>, and a frequency filter, oscillator, electronic circuit and electronic device employing this surface acoustic wave device is provided, wherein a first oxide thin film layer comprising SrO or MgO and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (110) Si substrate, or a first oxide thin film layer comprising CeO2, ZrO2 or yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (100) Si substrate, a KNbO3 piezoelectric thin film being then formed on top of either of these second oxide thin film layers, and then, a protective film comprising oxide or nitride is formed on top of the KNbO3 piezoelectric thin film, finally, at least one electrode is formed on top of this protective film, to form a surface acoustic wave device, which surface acoustic wave device is employed to form a frequency filter, oscillator, electronic circuit, or electronic device.