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8results about "Piezoelectric/electrostrictive device material selection" patented technology

Piezoelectric laminate and piezoelectric element

ActiveUS12652961B2Piezoelectric/electrostrictive device material selectionThin membranePiezoelectric thin films
A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.
Owner:FUJIFILM CORP

Composite material for power generation and method for producing the same

ActiveJP7820812B2Piezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostriction/magnetostriction machinesMechanical engineeringComposite material
To provide a composite material for power generation with high durability and relatively good piezoelectric properties, and a method for manufacturing composite material for power generation.SOLUTION: A composite material for power generation includes a piezoelectric ceramic having a plate shape with a predetermined thickness, and a polymer with piezoelectricity, and the ceramic content is configured to continuously and gradually change along the thickness direction. The composite material for power generation is manufactured such that multiple types of piezoelectric thin films containing piezoelectric ceramics and piezoelectric polymers and having different ceramic contents are laminated such that the ceramic contents gradually change along the thickness direction, and then are subjected to heat treatment.SELECTED DRAWING: Figure 1
Owner:TOHOKU UNIV

Lattice structure with piezoelectric behavior, a force or movement sensor and an actuator containing said lattice structure

Lattice structure with piezoelectric behavior characterized in that the lattice structure (1) comprises a periodic succession of unitary cells (10), wherein each unitary cell (10) is made of a dielectric material, is bending or torsion dominated and comprises nanometric structural connectors (11) connected to each other through nodes (12) defining a non-centrosymmetric shape having a topological constraint that induces torsion or bending of said structural connectors (11); and wherein the unitary cells (10) are connected to each other at least in series defining a continuous electric potential accumulation path with two opposed ends (2, 3), the unitary cells (10) being arranged within the lattice structure (1) in a non-centrosymmetric disposition accumulating and conducting without cancellation the electric gradient generated on each unitary cell (10) through the lattice structure (1) to said two opposed ends (2, 3).
Owner:UNIV POLITECNICA DE CATALUNYA

Method for manufacturing a piezoelectric element, piezoelectric element, and droplet dispensing head

ActiveJP7835103B2Piezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostrictive device material selectionMechanical engineeringLiquid drop
To provide a method for manufacturing a piezoelectric element having excellent piezoelectric properties and a piezoelectric element.SOLUTION: A method for manufacturing the piezoelectric element 44 comprises the steps of forming a first conductive film 441a on a diaphragm 36 as a substrate; etching the first conductive film 441a; forming a second conductive film 441b on the first conductive film 441a; etching the second conductive film 441b to form the first electrode 441 having a step region S as a step comprising the second conductive film 441b and the first conductive film 441a at the edge; forming a seed layer 442 as an orientation control layer covering the first electrode 441 by a liquid phase method; forming a piezoelectric film 443a on the seed layer 442; forming a piezoelectric body 443 by etching the piezoelectric film 443a; and forming a second electrode 444 covering the piezoelectric body 443.SELECTED DRAWING: Figure 6
Owner:SEIKO EPSON CORP

Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element

There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1-xNax)NbO3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less.
Owner:SCIOCS COMPANY +1

Method for manufacturing device comprising halide perovskite active layer, and power generation devices

ActiveUS12527225B2Piezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostrictive device material selectionPhysical chemistryActive layer
A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.
Owner:UI (UNIVERSITY IND FOUNDATION) YONSEI UNIVERSITY

Composition of piezoelectric material, method for fabricating the same, piezoelectric device, and display apparatus comprising piezoelectric device

ActiveUS12471495B2Piezoelectric/electrostrictive device material selectionIdentification meansStructural engineeringComposite material
Compositions are disclosed that comprise a piezoelectric material according to Chemical Formula 1: (1−y)(NaaK1-a)(Nb1-x,Sbx)−ySrZrO3+n mol % CuO, wherein 0.01≤y≤0.10, 0.4≤a≤0.6, 0≤x≤0.06, and 0.5≤n≤1.5. The compositions can further comprise a first material, and a second material surrounded by the first material. A piezoelectric device is also described, which includes a piezoelectric device layer including a composition of Chemical Formula 1, and having a first material layer and a second material layer surrounded by the first material layer; a first electrode part disposed on a first surface of the piezoelectric device layer; and a second electrode part disposed on a second surface facing the first surface.
Owner:LG DISPLAY CO LTD +1