136 results about "Piezoelectric coefficient" patented technology

The present disclosure provides a multi-coefficient coupled-mode surface acoustic wave resonator and a manufacturing method therefor. During operation of the surface acoustic wave resonator, at least two different piezoelectric coefficients are coupled and jointly excite acoustic waves. The multi-coefficient coupled-mode surface acoustic wave resonator comprises: a substrate; a piezoelectric layer, provided on the substrate; an electrode unit, provided on the surface of the piezoelectric layer and comprising at least one interdigital electrode pair; and a reflective grating unit, comprising at least two grating structures which are symmetrically arranged on the two sides of the electrode unit, wherein the equivalent density of the electrode unit is greater than 4000kg / m3. The electric field distribution is changed by changing the mass loading effect of the interdigital electrode pair and the ratio of the electrode wavelength to the thickness of the piezoelectric layer, such that at least two piezoelectric coefficients are mutually coupled to jointly excite acoustic waves, thus achieving the surface acoustic wave resonator having an electromechanical coupling coefficient exceeding 25%.

The invention relates to the technical field of piezoelectric ceramics, in particular to a bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material as well as preparation and application thereof. The chemical general formula of the bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material disclosed by the invention is (1-x-y) BiFeO3-x (PbMez) TiO3-yBi (Zn0. 5Ti0. 5) O3, wherein Me is an alkaline earth metal element, x is equal to 0.4-0.8, y is equal to 0.05-0.3, z is equal to 0.05-0.5, and 1-x-y is greater than 0. The piezoelectric ceramic material has large anisotropy (d33 / d31 is between 5 and 60) and relatively high voltage (d33 is greater than 100pC / N), has a wide application prospect in the technical field of high-frequency image sonar transducers, and solves the problems of low piezoelectric coefficient and piezoelectric anisotropy of the existing bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material.

An optical element includes a first piezoelectric layer of fluorinated polymer with a piezoelectric coefficient, d31, of at least 25 pC / N and an electrode layer disposed on the first piezoelectric layer. An optical characteristic of the optical element changes when the first piezoelectric layer is deformed upon application of a voltage at the electrode layer.

Provided in the present disclosure are a multi-coefficient coupled mode-based surface acoustic wave resonator and a manufacturing method therefor, which can be applied to the technical field of resonators. The multi-coefficient coupled mode-based surface acoustic wave resonator comprises a substrate; a piezoelectric layer arranged on the substrate, the tangential direction of the piezoelectric layer being a Z tangential direction, a piezoelectric coefficient matrix that corresponds to the piezoelectric layer at least comprising a non-zero first piezoelectric coefficient e15 and second piezoelectric coefficient e16 and, under the action of a transverse electric field and on the basis of the first piezoelectric coefficient e15 and the second piezoelectric coefficient e16, the coupled mode of the piezoelectric layer being excited; and at least two interdigital electrodes arranged on the piezoelectric layer, the ratio of the center distance of the two adjacent interdigital electrodes to the thickness of the piezoelectric layer being 0.25-5, and the ratio of the thickness of each interdigital electrode to the thickness of the piezoelectric layer being less than 0.5.

The application belongs to the technical field of flexible piezoelectric materials, and discloses a grafted ferroelectric polymer thin film with a high piezoelectric coefficient and a preparation method thereof, wherein the preparation method comprises the following steps: obtaining a polymer solution by selecting a polyvinylidene fluoride-based ferroelectric polymer; adding a grafting agent reagent to the polymer solution and uniformly mixing to obtain a mixed solution; uniformly casting the mixed solution on the surface of a glass substrate, heating in an oven to volatilize the solvent, then increasing the temperature of the oven to perform a grafting reaction to obtain a grafted thin film; after the oven is naturally cooled to room temperature, the grafted thin film is peeled off from the glass substrate, and a polarization process is adopted to obtain the grafted ferroelectric polymer thin film with a high piezoelectric coefficient. The polyvinylidene fluoride-based ferroelectric polymer is modified by grafting side chains, the relative stability of different molecular conformation energies in the ferroelectric polymer is regulated by grafting side chains in the polymer, the ferroelectric phase and the relaxor phase in the ferroelectric polymer are induced to compete with each other, and the piezoelectric coefficient of the material is significantly improved.

The invention discloses a piezoelectric effect finite element modeling method considering electric field and rate related hysteresis characteristics, belongs to the technical field of piezoelectric driving theories, and aims to solve the problem that a finite element model with a fixed piezoelectric coefficient is large in error during displacement analysis. A piezoelectric effect finite element modeling method which adopts a time-varying piezoelectric coefficient and considers electric field and rate-dependent hysteresis characteristics is provided, and accurate description of piezoelectric displacement under excitation of different electric signals is realized. Comprising the following steps: S1, piezoelectric displacement measurement; s2, identifying a hysteresis model and parameters; s3, regression fitting of the hysteresis model; and S4, finite element modeling. According to the modeling method of the piezoelectric ceramic finite element model, the hysteresis model is combined with the piezoelectric constitutive equation in the finite element model, the modeling method of the piezoelectric ceramic finite element model considering the hysteresis characteristic is provided, and the established finite element model can accurately predict output displacement tracks under different electric signal excitation and force-electricity coupling excitation in the simulation process; and the method has a certain promotion significance on the research of shearing piezoelectric ceramic analog simulation.

The invention belongs to the technical field of microelectronic devices, and discloses an optimization method of a high-thickness hafnium-based piezoelectric film device, the thickness of a hafnium-based piezoelectric functional layer of the high-thickness hafnium-based piezoelectric film device is not less than 20nm, and the hafnium-based piezoelectric functional layer is of a superlattice structure formed by alternately laminating hafnium oxide and zirconium oxide; the piezoelectric performance of the high-thickness hafnium-based piezoelectric film device is optimized by depositing a third oxide layer at the interface of two adjacent superlattice units every other preset thickness in the hafnium-based piezoelectric functional layer; the third oxide layer is selected from an aluminum oxide layer and a silicon oxide layer. The third oxide layer is inserted into the superlattice laminated structure formed by alternately laminating high-thickness hafnium oxide and zirconium oxide, so that the formation of large grains in the hafnium-based piezoelectric film can be inhibited, the formation of an m-phase structure without piezoelectric property in the hafnium-based film is inhibited, the increase of non-centrosymmetric o-phase structures in the film is promoted, and the piezoelectric property of the film is improved. Therefore, the piezoelectric coefficient of the whole device is improved, and the piezoelectric property of the high-thickness hafnium-based piezoelectric film device is optimized.

Aspects of this disclosure relate to a bulk acoustic wave resonator having an acoustically active region and a peripheral region. The bulk acoustic wave resonator can include a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a recessed frame structure at least partially in the acoustically active region. The piezoelectric layer can have an effective piezoelectric coefficient with a lower magnitude in the peripheral region than in the acoustically active region. Other embodiments of bulk acoustic wave resonators are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Disclosed in the present invention is a domain wall straightening method for a periodically poled ferroelectric crystal. In the present invention, by means of testing a piezoelectric coefficient of a poled sample, the poling situation of the sample can be non-destructively determined, and regions with uniform poling can be selected; moreover, whether to continue poling or terminate poling and restart poling after single-domain formation can be determined on the basis of a duty cycle calculation result; and the straightness of domain walls is determined on the basis of the variation of the piezoelectric coefficient, such that the magnitude and duration of a poling voltage are adjusted in a timely manner, thereby accurately controlling a poling process, and thus obtaining a high-quality periodically poled crystal.

A method of calculating a drive speed of a piezoelectric actuator, the piezoelectric actuator comprising an impact drive system and a driven member, the impact drive system comprising a fixing member, a piezoelectric element, and a shaft connected in this order and the driven member being provided on the shaft to be moveable along a longitudinal axis direction of the shaft, wherein the piezoelectric element is disposed on one surface of the fixing member to be extendable and shrinkable in a direction perpendicular to the surface of the fixing member, wherein the shaft is disposed in a direction perpendicular to and on a surface of the piezoelectric element opposite to a surface facing the fixing member, and wherein the piezoelectric element provides a movement of the driven member when a voltage is applied to the piezoelectric element, the method comprising calculating a drive speed Sp by the following equation (II) : Sp = μ *2 *f *αv *αs *αf ··· (II) where μ is a displacement of the piezoelectric element calculated by the following equation (III), f is a frequency of a voltage applied to the piezoelectric element, αv is a speed distribution coefficient calculated by the equation (I), αs is a shaft damping coefficient, and αf is a transfer efficiency of a displacement of the driven member by one cycle of extension and shrink of the piezoelectric element, αv = (Mw + Mp) / (Mw + 2 *Mp + Ms) ··· (I) where Mw is a mass of the fixed member, Mp is a mass of the piezoelectric element, and Ms is a mass of the shaft, μ = n *V *d33 *k··· (III) where n is a number of layers of the piezoelectric element, V is an input voltage applied to the piezoelectric element, d33 is a piezoelectric coefficient, and k is a linear compensation coefficient.

Relaxation lead-based textured ceramic material with low texture temperature and high electrical performance, preparation method and application thereof relates to relaxation lead-based textured ceramic material and preparation method and application thereof. The problem of high texture temperature of low Zr content ceramic, orientation grain presenting core-shell structure, high Zr content ceramic being difficult to be textured with high quality, leading to high voltage electrical performance and low texture temperature of ceramic being unable to be acquired simultaneously is solved. Chemical formula (1-x-y) Pb (A, Nb) O3-x Pb Zr O3-y Pb Ti O3 is prepared at 850 DEG C-1095 DEG C, the texture Zr content can reach more than 50%, along [001] c The orientation degree is greater than 96%, the grain misplacement degree is less than 0.20, there is no core-shell structure, the Curie temperature is greater than or equal to 200 DEG C, the quasi-static piezoelectric coefficient is greater than 1000 pC / N, and the electromechanical coupling coefficient is greater than 0.85. The method comprises the following steps: preparing a mother body fine powder, preparing a ceramic green body by flow casting and stacking and pressing, and preparing a textured ceramic. The method is used in a multilayer piezoelectric device.

The invention belongs to the technical field of piezoelectric ceramic materials, and discloses a hard piezoelectric ceramic preparation method based on oxidation-reduction treatment, which comprises the following steps: sintering a piezoelectric ceramic green body with the component of Ba (1-x) EuxTi (1-x / 8O3) in a reducing atmosphere to obtain BT piezoelectric ceramic (x = 0.015-0.04); and carrying out oxidation treatment on the BT piezoelectric ceramic in an air atmosphere at 1200-1350 DEG C to obtain the hard piezoelectric ceramic. According to the invention, an additional driving force is provided through an oxidation-reduction reaction, so that a solute is separated out in a precipitation phase in a solid solution with relatively low content, the limitation of component regulation and control is solved, and a relatively good piezoelectric coefficient is achieved while the electromechanical coupling performance is optimized.

The invention relates to a hydrophobic tripeptide molecule, a crystal constructed by the hydrophobic tripeptide molecule and application of the hydrophobic tripeptide molecule in a piezoelectric device. The structural formula of the polypeptide molecule is shown as a formula (I). The polypeptide molecule can form a micron-sized crystal through a heating-cooling method, and the interior of the micron-sized crystal is of an asymmetric structure and is of a triclinic system. A crystal formed by the polypeptide molecule has a relatively high piezoelectric coefficient (21.5 pC / N), a sandwich type piezoelectric device is constructed by using the crystal, and the output voltage can reach 2.57 V, which is the highest value of an oligopeptide nano material prepared in an aqueous solution. Therefore, the invention provides a method for forming the tripeptide crystal, and provides a potential strategy for development of piezoelectric materials based on short peptide self-assembly. (I)

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a lead antimonate niobate-lead manganese niobate-lead zirconate titanate piezoelectric ceramic material and a method. Comprising a chemical general formula of xPb (Sb1 / 3Nb2 / 3) O3 <-0.04 > Pb (Mn1 / 3Nb2 / 3) O3 <-(0.96-x) Pb < 0.98 > Sr < 0.02 > (Zr < 0.5 > Ti < 0.5 >) O3 < + y wt% Fe < 2 > O < 3 >, wherein x is equal to 0.01 to 0.08, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Sb2O3, MnO2 and SrCO3. The piezoelectric ceramic has a high piezoelectric coefficient and a high electromechanical coupling coefficient at the same time, compared with traditional P-8 series piezoelectric ceramics, the energy conversion rate can be improved, and the piezoelectric ceramic has low dielectric loss and high mechanical quality factor together with P-8 and has low loss in the energy conversion process.

The invention discloses a PZT-based high-power piezoelectric ceramic and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The chemical formula of the antimony manganese-lead zirconate titanate piezoelectric ceramic is 0.05 Pb (Mn < 1 / 3 > Sb < 2 / 3 >) O < 3 >-0.95 Pb < 0.97 > Sr < 0.03 > (Zr < 1 / 2 > Ti < 1 / 2 >) O < 3 + 0.1 wt% of manganese-containing oxide. By doping the manganese-containing oxide into the antimony manganese-lead zirconate titanate matrix, when the piezoelectric coefficient d33 of the prepared antimony manganese-lead zirconate titanate based piezoelectric ceramic reaches 393pC / N, the mechanical quality factor Qm can reach 1708, the electromechanical coupling coefficient is 0.630, the dielectric loss is 0.45%, the Curie temperature is 299 DEG C, and the antimony manganese-lead zirconate titanate based piezoelectric ceramic has excellent comprehensive performance.

The present application relates to a potassium sodium niobate based textured piezoelectric ceramic with high Curie temperature and temperature stability, and a preparation method thereof, the textured piezoelectric ceramic has a general chemical formula of (0.99-x)((K 0.5 Na 0.5 )(Nb 0.98 Ta 0.02 )O3)‑0.01(Bi(Ni 0.67 Nb 0.33 )O3)‑x(Bi 0.5 K 0.5 )HfO3+3wt.%NaNbO3, 0≤x≤0.04; the method comprises a solid phase synthesis method, a two-step molten salt method combined with a separation method, a template grain growth method, a casting process, a hot pressing process, a glue removal process, a two-step sintering process, a silver sintering process and a polarization process. Compared with the prior art, the present application can obtain a lead-free textured piezoelectric ceramic with high Curie temperature and high piezoelectric performance by the solid phase synthesis method, the template grain growth method combined with the casting process and the two-step sintering process, more importantly, the ceramic exhibits a single tetragonal phase structure, has high positive and inverse piezoelectric coefficients, and the piezoelectric coefficient and the inverse piezoelectric coefficient have small change rates in a wide temperature range, and has excellent temperature stability.

The present application relates to the technical field of piezoelectric thin film material, and particularly relates to a piezoelectric thin film nozzle suitable for a micro-electro-mechanical system and a preparation method thereof. The nozzle comprises a silicon substrate, a composite vibrating membrane layer, a lower electrode, a gradient lanthanum-doped lead zirconate titanate piezoelectric thin film and a ring-shaped upper electrode. The piezoelectric thin film is sequentially provided with a lanthanum-rich bottom layer, a lanthanum-transition middle layer and a lanthanum-depleted surface layer along the thickness direction. Through gradient doping, layered atmosphere heat treatment and full-film three-stage gradient crystallization annealing, residual stress is effectively released, warping deformation and micro-crack propagation are inhibited, and the piezoelectric coefficient is improved. The design of the ring-shaped upper electrode and the center reserved spray hole can stably convert the low stress advantage of the material level into the improvement of the liquid droplet spraying direction precision, volume consistency and long-term stability, thereby solving the problem that the piezoelectric thin film is prone to warping and cracking, and the spraying precision and reliability are difficult to be considered in the prior art.

The application provides a kind of based on the reliability evaluation method of locking release mechanism of dynamics, including the randomness modeling of the initial position of stud in locking release mechanism;Degradation characteristic modeling is carried out for the piezoelectric coefficient degradation of piezoelectric stack;The randomness of stud and the degradation characteristic of piezoelectric stack are introduced into the dynamics model of locking release mechanism;The response of mechanism under different conditions is analyzed by numerical simulation;The failure mode of locking release mechanism is defined in combination with simulation results;The reliability of locking release mechanism is evaluated by using Kaplan-Meier survival analysis method.The application improves the accuracy and effectiveness of reliability evaluation, accurately evaluates the dynamic response of locking release mechanism under different working conditions, more accurately predicts the possible failure mode and failure probability of mechanism after long time operation;It can better simulate and evaluate the influence of these complex environments on system reliability to ensure stability and safety in actual tasks.

The application discloses a method for preparing a high self-polarization piezoelectric performance bismuth ferrite-based film through multi-element isometric solid solution. The method comprises the following steps: configuring sols of more than three different cations which are solid-solved at B positions of bismuth ferrite, then dropping the sols on a substrate, uniformly coating the sols, solidifying, drying, pyrolyzing and annealing, repeating the dropping, uniformly coating, solidifying, drying, pyrolyzing and annealing processes, and obtaining a bismuth ferrite-based ferroelectric polycrystal film with a required thickness. The sol-gel method is adopted to prepare the multi-element isometric solid solution ferroelectric film, so that accurate component control can be realized, the growth of the material on a large-area substrate is suitable, the equipment and synthesis steps are simple, the material is saved, the cost is low, industrialized production is easy to realize, and the prepared ferroelectric polycrystal film has excellent self-polarization characteristics and a high piezoelectric coefficient, so that the ferroelectric polycrystal film has a wide application prospect in the field of electronic material technology.

This invention provides a simulation method and application based on the slip ferroelectricity and piezoelectricity of two-dimensional heterolayer materials. The simulation method first constructs a g-C3N4 / graphene heterolayer model, forming various stacking configurations such as AA, AB, and BA. Then, based on density functional theory, structural optimization and electronic structure calculations are performed on the constructed heterolayer model. Based on this, the out-of-plane ferroelectric polarization and in-plane piezoelectric coefficient of the heterolayer under different stacking configurations are solved. Finally, combined with charge transfer characteristics and band structure analysis, the microscopic physical mechanism of the coexistence of slip ferroelectricity and piezoelectric properties of the system is elucidated. This invention can provide a theoretical basis for multifunctional two-dimensional materials through this simulation method, and has broad prospects for applications in memory, sensors, and actuators.

The application belongs to the technical field of functional ceramics, and discloses a high-temperature piezoelectric ceramic, a preparation method thereof and a high-temperature piezoelectric device. The chemical general formula of the high-temperature piezoelectric ceramic is xBiInO3-0.2PbZrO3-(0.8-x)PbTiO3, wherein x represents a mole fraction, and the value range of x is 0.2 < x < 0.3. By introducing PbZrO3 with a perovskite structure as a third component to form a solid solution with BiInO3-PbTiO3, the tolerance factor is increased, and the key role of a structural stabilizer is played, thereby effectively solving the technical problem of the structural stability of the BI-PT system. Meanwhile, the piezoelectric ceramic has a pure perovskite phase structure, a Curie temperature greater than 550 DEG C, a piezoelectric coefficient of 56-72 pC / N, and a dielectric constant of 485-636, and is suitable for high-temperature piezoelectric devices.

Aspects of this disclosure relate to a bulk acoustic wave resonator having an acoustically active region and a peripheral region. The bulk acoustic wave resonator can include a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a recessed frame structure at least partially in the acoustically active region. The piezoelectric layer can have an effective piezoelectric coefficient with a lower magnitude in the peripheral region than in the acoustically active region. Other embodiments of bulk acoustic wave resonators are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

The invention relates to the field of geophysical logging, and discloses an optical fiber sensing sound wave detector supporting multidirectional detection based on an elastic rod body and a detection device. An optical fiber sensing sound wave detector supporting multidirectional detection based on an elastic rod body comprises the elastic rod body and a plurality of optical fibers. Wherein a plurality of through holes are formed in the elastic rod body in the axis direction of the elastic rod body, the number of the through holes is the same as that of the optical fibers, and the through holes are formed in the periphery of the axis of the elastic rod body in an equal central angle mode; each optical fiber penetrates through a through hole formed in the axis direction of the elastic rod body and extends into the elastic rod body, and each through hole allows one optical fiber to penetrate through. The distributed optical fibers are used for receiving acoustic signals, the defect that the piezoelectric coefficient and the energy conversion efficiency of a traditional piezoelectric crystal are reduced in a high-temperature environment due to the fact that the traditional piezoelectric crystal is influenced by the Curie temperature of a ceramic material is overcome, and the problem that the amplitude of a receiver is saturated due to high-energy emission can also be avoided.

The application discloses a screening method and device of piezoelectric anisotropic perovskite material, and high-throughput calculation and screening are performed on tetragonal phase ABO3 perovskite oxide material through first principle calculation, the correlation between piezoelectricity and lattice tetragonality, polarization displacement, spontaneous polarization and elastic constant is pointed out, and the method can be used for screening and guiding design of high-performance piezoelectric material. The application gives a three-dimensional representation of piezoelectric coefficient, re-evaluates the piezoelectric coefficient ratio |d 33 / d 31 | which is widely used at present, and points out the deficiency in representing piezoelectric anisotropy, and can be extended to anisotropy of other piezoelectric materials.

This invention provides a CaBi₂Nb₂O₉ ceramic, wherein the area of ​​ferroelectric domains in any cross-section of the CaBi₂Nb₂O₉ ceramic accounts for 14-18% of the cross-sectional area; and the length of the ferroelectric domains in the CaBi₂Nb₂O₉ ceramic is 234-596 nm, and the thickness is 41-196 nm; the inverse piezoelectric coefficient extrapolated from the zero electric field amplitude of the CaBi₂Nb₂O₉ ceramic is 6.5-6.8 pm / V; and the Rayleigh coefficient of the CaBi₂Nb₂O₉ ceramic is 0.15-0.18 × 10⁻⁶. ‑17 m 2 / V 2 Furthermore, the CaBi₂Nb₂O₉ ceramic at room temperature... 33 The C / N ratio is 13-13.5 pC. This invention also discloses the preparation method and application of the CaBi₂Nb₂O₉ ceramic.

This invention relates to the field of piezoelectric materials technology, specifically to a chiral nitrogen-containing heterocyclic organic crystalline piezoelectric material and its preparation method. The organic crystalline piezoelectric material is N-cyanoethyl-( S )-2-methylpiperazine hydrochloride, whose core is a one-dimensional hydrogen-bonded chain construction strategy of unilaterally protonated chiral piperazine, with protonated N-cyanoethyl-( S Using 2-methylpiperazine cations as structural building blocks and chloride ions as charge balancers, a highly oriented one-dimensional hydrogen bond chain is constructed by regulating intermolecular hydrogen bonding. This enhances the ordered arrangement of molecular dipoles and optimizes the synergistic mode of lattice strain-polarization response, achieving a breakthrough in piezoelectric properties. The material exhibits a piezoelectric coefficient as high as ±80 pC / N and an electromechanical coupling coefficient as high as 0.35, far exceeding known chiral organic piezoelectric materials. Furthermore, it demonstrates excellent thermal stability and can be widely applied in demanding applications such as micro-pressure sensors, low-frequency vibration detectors, and micro energy harvesters.

The invention provides a multi-mode coupling acoustic resonator, a filter and radio frequency equipment, and relates to the technical field of acoustic resonators. According to the multi-mode coupling acoustic wave resonator, the material of a piezoelectric layer is selected, and the value range of an in-plane Euler angle is set, so that piezoelectric coefficients of the piezoelectric layer comprise an e11 component, an e13 component and an e34 component in a piezoelectric coefficient matrix; by designing the ratio of the thickness of the piezoelectric layer to the periodic wavelength of the interdigital electrode, a transverse electric field and a longitudinal electric field exist in the piezoelectric layer at the same time when voltage is applied to the interdigital electrode; and by designing the ratio of the thickness of the interdigital electrode to the thickness of the piezoelectric layer, the integral of the dot product of the electric field and the alternating stress field in the piezoelectric layer in the thickness direction of the piezoelectric layer is not zero, so that the transverse electric field and the longitudinal electric field excite a multi-mode coupling acoustic wave at the same time, and the multi-mode coupling acoustic wave resonator has the advantages of ultrahigh working frequency, low cost and the like. And the material has a large electromechanical coupling coefficient, and can meet the large bandwidth requirement of centimeter wave communication frequency bands.

The invention provides a method for in-situ construction of a titanate coating with a high piezoelectric coefficient on the surface of a titanium implant. The method comprises the following steps: (1) immersing a pretreated titanium implant into an alkaline solution for alkali treatment, and washing and drying to obtain an alkali-treated titanium implant; (2) putting the titanium implant subjected to alkali treatment into a hydrothermal solution for hydrothermal reaction; after the reaction is finished, washing and drying are carried out, a titanate coating is formed on the surface of the titanium implant, and the titanium implant with the titanate coating is obtained; and (3) the titanium implant with the titanate coating prepared in the step (2) is subjected to annealing treatment and then rapidly cooled to the room temperature, and the titanate coating with the high piezoelectric coefficient is obtained on the surface of the titanium implant. According to the method, alkali activation treatment, hydrothermal reaction and a rapid cooling annealing process are combined, so that the piezoelectric property and the interface bonding strength of the coating are remarkably improved.

The invention discloses an acousto-optic modulator based on heterogeneous integration of PZT and chalcogenide glass, and belongs to the technical field of integrated photoelectronics. The modulator sequentially comprises a silicon substrate, a silicon dioxide lower cladding layer and a lead zirconate titanate (PZT) piezoelectric film layer from bottom to top, a chalcogenide glass optical waveguide is heterogeneously integrated on the PZT layer, and the optical waveguide is patterned into a Mach-Zehnder interferometer (MZI) structure. An interdigital transducer (IDT) made of aluminum (Al) is arranged between two arms of the MZI, and air grooves which extend to a lower cladding layer or a substrate are etched in the outer sides of the two arms respectively. The advantage of high piezoelectric coefficient of PZT and the advantage of high photoelasticity of chalcogenide glass are combined through heterogeneous integration. Aluminum is used as an IDT electrode material, so that the mass loading effect of the electrode on the surface acoustic wave is effectively reduced; acoustic resonant cavities are constructed through air grooves in the outer sides of the two arms, sound wave energy is limited in an optical waveguide area, and the acousto-optic interaction is remarkably enhanced. The structure realizes optical signal modulation with low driving voltage, low loss and high efficiency, and is suitable for an integrated optical path system of intermediate infrared and communication wavebands.

The invention provides a layered ferroelectric material piezoelectric response measurement method and device capable of eliminating static artifacts, and relates to the technical field of advanced functional material characterization and testing. According to the specific implementation scheme, a CuxInyP2S6 single crystal is synthesized by adopting a chemical vapor transport method; a Raman spectrum and an energy dispersive spectrometer are used for testing, and whether a sample composition is a CuInP2S6-In4 / 3P2S6 bulk heterostructure or not is verified; if the verification result is yes, the influence of the CuInP2S6-In4 / 3P2S6 ferroelectric domain characterization result under the action of the static artifact is obtained through a PFM test; using a static blind spot method to counteract static artifacts, and performing comparative analysis to obtain a real amplitude value of a CuInP2S6-In4 / 3P2S6 surface ferroelectric domain; and corresponding data are extracted for calculation, so that the piezoelectric coefficient of CuInP2S6-In4 / 3P2S6 is obtained. By optimizing a bias voltage and laser positioning strategy, the interference of electrostatic interaction on a measurement signal is effectively eliminated.