204 results about "Curie temperature" patented technology

The invention relates to the technical field of vacuum induction heating temperature control, and discloses a vacuum induction heating temperature closed-loop control system integrated with SCADA (supervisory control and data acquisition), which is characterized in that a functional material layer with preset Curie temperature is compounded on the surface of an induction coil, and the absolute value of phase difference is analyzed by collecting voltage and current signals of the coil in real time; according to the invention, through the synergistic effect of the electromagnetic impedance sudden change characteristic of the functional material layer and the phase difference detection mechanism, non-contact accurate control of the phase change critical temperature of the workpiece is realized; and meanwhile, due to the coupling application of the asymmetric micro-pulse waveform design and the dynamic adjustment strategy, the contradiction between thermodynamic response and electromagnetic interference in a vacuum environment is effectively balanced, and the control precision and stability of the system are remarkably improved.

The present application provides a susceptor for inductively heating an aerosol generating substrate, a preparation method of the susceptor, and an aerosol generating article comprising the susceptor; the susceptor comprises a single alloy prepared by smelting iron, nickel and zircon as main element raw materials, has a Curie temperature of 300-600 DEG C, and the initial magnetic permeability of the alloy presents a peak characteristic with the increase of temperature. The single layer structure susceptor of the single alloy material of the present application realizes the functions of heating and temperature control at the same time, and overcomes the defects of the prior art, such as complex process, high preparation cost, and limited compatibility of electromagnetic induction heating appliances. Meanwhile, the susceptor has a relatively wide magnetic performance variation window and an aerosol generating system performance variation window, and can be flexibly adapted to more aerosol generating substrates.

The invention discloses a low ferromagnetic resonance linewidth BaFe12O19 single crystal and a preparation method thereof, and belongs to the technical field of magnet materials. According to the method, growth of the BaFe12O19 single crystal is realized mainly through multiple times of temperature rising and falling and multiple times of temperature oscillation. Compared with direct cooling, the single crystal grown by the method provided by the invention has higher Curie temperature and saturation magnetization and narrower ferromagnetic resonance line width. Through collaborative optimization of high Curie temperature, high saturation magnetization and low ferromagnetic resonance line width, the BaFe12O19 single crystal can be better applied to the frontier fields of high-frequency electronic devices, high-temperature permanent magnet systems, quantum technologies and the like. The improvement of the performance of the device can promote the development of the device in the directions of high frequency, miniaturization and high energy efficiency, and has strategic significance for new-generation communication, energy and information technologies.

The invention provides an induction heating device, an aerosol generation system and a control method, and the device is used for heating an aerosol generation product comprising a magnetic metal receptor, and comprises an AC power supply module, an excitation winding, a detection winding and a voltage measurement module. After the aerosol generating product is loaded to the induction heating device, the magnetic metal receptor contained in the aerosol generating product is located in the space of the excitation winding; the length direction of the magnetic metal receptor is parallel to the axes of the excitation winding and the detection winding; the Curie temperature of the magnetic metal is higher than 200 DEG C; the temperature measurement precision is high, the influence of parasitic parameters of components on the measurement precision is eliminated, the influence of position change of the magnetic metal receptor on measurement is reduced, and the defects of airflow obstruction, heating interference and energy consumption increase in temperature measurement of an existing active sensor are overcome.

The invention relates to the field of fiber manufacturing, in particular to a magnetic far-infrared dual-response fiber and a preparation method thereof.The magnetic far-infrared dual-response fiber comprises a polymer matrix and a magnetic far-infrared composite material evenly distributed in the polymer matrix; the magnetic far-infrared composite material comprises a nano ferroferric oxide core body and a zirconium carbide coating layer coating the core body, the interior of the nano ferroferric oxide core is doped with transition metal elements, so that the Curie point temperature of the nano ferroferric oxide core is 40-50 DEG C, and the surface of the nano ferroferric oxide core is modified by a cationic surface active agent to form a positive charge layer; hydroxyl is grafted on the surface of the zirconium carbide material. The Curie temperature of ferroferric oxide is precisely regulated and controlled to range from 40 DEG C to 50 DEG C through transition metal doping, a magnetic-far infrared synergistic energy transfer channel is designed and constructed in combination with a core-shell structure, intelligent response with the far infrared emissivity larger than or equal to 0.90 is achieved under body temperature triggering, and the functional strength and large-scale production feasibility are both achieved.

The invention discloses a piezoelectric ceramic with high Curie temperature and high temperature stability and a preparation method thereof, the composition general formula of the piezoelectric ceramic is xPb (In1 / 2Nb1 / 2) O3-yPbZrO3-(1-x-y) PbTiO3, the value range of x is 0.20-0.50, and the value range of y is 0.10-0.30. The high Curie temperature, the large piezoelectric coefficient and the high coercive field are achieved, the temperature stability of the excellent piezoelectric property at the room temperature to 300 DEG C is achieved, the change rate of the inverse piezoelectric coefficient within the range from the room temperature to 180 DEG C is only 1.4%, and the change rate of the electromechanical coupling coefficient kp within the temperature range from the room temperature to 275 DEG C is only 4.2%.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The invention discloses a neodymium-iron-boron rare earth permanent magnet, a preparation method and use thereof. The neodymium-iron-boron rare earth permanent magnet comprises: R: 28.5-33 wt %, wherein RL comprises Pr, Pr≥14 wt %, and RH comprises one or more of Dy, Tb, Gd and Ho; Co: 12-20 wt %; Al: 0.5-1.5 wt %; X: 0.3-1.5 wt %; B: 0.88-1.05 wt %; and a balance of Fe, the microstructure thereof comprises a main phase M, a grain boundary phase A and a grain boundary phase B; the main phase M is R2(Fe, Co)14B having a volume percentage of 90-94%; the grain boundary phase A is R(Fe, Co)2 having a volume percentage of 5-8%; and the grain boundary phase B is R4(Fe, Co)3 having a volume percentage of 1-2%. The neodymium-iron-boron rare earth permanent magnet has a high Co content, a high Curie temperature, a low temperature coefficient, good mechanical properties, a high magnetic energy product and a high coercive force.

The application relates to a nickel-zinc-copper ferrite and a preparation method and application thereof, the nickel-zinc-copper ferrite comprising main components and auxiliary components; the main components comprise Fe2O3 64-66.7 mol%, NiO 9-12 mol%, ZnO 13.5-19 mol% and CuO 3-9.5 mol% with the total mole percentage being 100 mol%; the auxiliary components comprise Bi2O3 0.3-1.5 wt%, Co2O3 0.1-0.6 wt%, CaCO3 0.03-0.08 wt% and ZrO2 less than or equal to 0.1 wt% with the total mass percentage of the main components being taken as a standard. The content of Fe2O3, ZnO, NiO and CuO is controlled, the content of the auxiliary components is matched and adjusted, the prepared nickel-zinc-copper ferrite has high saturation magnetic induction intensity, high magnetic permeability, high Curie temperature, low residual magnetic induction intensity and low specific temperature coefficient, and can be better applied to power inductance or common-mode inductance.

This invention relates to the field of dielectric energy storage ceramics technology, specifically to a high-efficiency BiFeO3-BaTiO3-based relaxor energy storage ceramic, its preparation method, and its applications. The chemical composition of this material is 0.4Bi. 0.9 (Sm 0.5 Gd 0.5 ) 0.1 FeO3-(0.6-x)Sr 0.4 Ba 0.6 TiO3-xSr(Sn) 1 / 3 Zr 1 / 3 Hf 1 / 3 O3-y(40Bi2O3-40B2O3-20ZnO), abbreviated as BF-SBT-xS(SZH)-yBBZ, where x=0,0.05,0.08,0.10, and y takes values ​​of 0,3wt%), utilizes the synergistic refinement of polarization domains by multiple ions at the A and B sites and the reduction of remanent polarization (P r The value of Sr is used to improve energy storage efficiency (η). 2+ Ba 2+ Adjusting Curie temperature, dielectric constant, and temperature stability; introducing Sn 4+ Zr 4+ Hf 4+ This disrupts the localized structure at the B site, leading to relaxor ferroelectricity. Ultimately, compared to the matrix BiFeO3-BaTiO3, it significantly increases the breakdown field strength (E). b ), significantly increasing energy storage density (W). rec This reduces ferroelectric hysteresis and improves charging and discharging efficiency.

The invention provides a hafnium-zirconium-oxygen film, a preparation method thereof and a hafnium-zirconium-oxygen film sensor, and belongs to the technical field of piezoelectric sensors, the hafnium-zirconium-oxygen film is prepared from a hafnium-zirconium-oxygen material, the chemical general formula of the hafnium-zirconium-oxygen material is Aly-HfxZr1-xO2, x is greater than or equal to 0.3 and less than or equal to 0.7, and y is greater than or equal to 0.02 and less than or equal to 0.08. The lead-free hafnium-based oxide is selected as a piezoelectric core, HfxZr1-xO2 is adopted as a matrix, Al is doped to stabilize an orthogonal ferroelectric phase and inhibit oxygen vacancy, d33 = 85-95 pC / N within the thickness range of 10-200 nm and reaches 90% of that of an existing PZT film, and the Curie temperature is increased to 600 DEG C and is greatly increased compared with 350 DEG C of the PZT film. And the material is completely free of lead and conforms to the RoHS instruction.

This invention provides an organic ferroelectric eutectic material, its preparation method, and its applications, relating to the field of ferroelectric materials technology. The organic ferroelectric eutectic material constructs a crystal system with "rigid constraint and flexible adaptation coexisting, dipole order and controllable polarization synchronously" through "molecular selection-supramolecular assembly-crystal structure regulation," achieving a synergistic effect of high Curie temperature, strong polarization characteristics, and excellent flexibility. The preparation method of the organic ferroelectric eutectic material utilizes a simplified "solvent dissolution-solvent evaporation" process, leveraging the mediating effect of the solvent to promote the supramolecular self-assembly of donor and acceptor molecules. This achieves the preparation of an organic ferroelectric eutectic material possessing both high Curie temperature, strong polarization characteristics, and excellent flexibility. The preparation method has multiple advantages, including "stable process, low cost, and suitability for large-area processing," making it a simple, efficient, and universally applicable preparation method suitable for large-scale industrial production.

A device with adjustable exchange bias based on a low-dimensional antiferromagnetic / ferromagnetic insulator heterojunction. A device with adjustable exchange bias based on a low-dimensional antiferromagnetic / ferromagnetic insulator heterojunction. (1) A heterojunction is formed by covering an antiferromagnetic topological insulator with a low-dimensional ferromagnetic insulator; there are two configurations of the heterojunction, namely, the ferromagnetic insulator completely covering the antiferromagnetic topological insulator and the ferromagnetic insulator semi-covering the antiferromagnetic topological insulator; (2) A non-magnetic insulating protective layer is covered above the heterojunction; (3) In the heterojunction, an obvious exchange bias effect can be observed; (4) By changing the coverage range of the ferromagnetic insulator, the sign of the exchange bias can be regulated; (5) The material system used for the device is van der Waals layered materials; by changing the coverage range of the ferromagnetic insulator, the sign of the exchange bias can be regulated; below the Curie temperature and Néel temperature of the magnetic material, the anomalous Hall effect can be measured by using low temperature and magnetic field for magnetotransport measurement.

The application provides an amorphous alloy magnetocaloric performance prediction method and system based on interpretable machine learning, relates to the technical field of material science and engineering, and comprises the following steps: step 1, constructing an amorphous alloy magnetocaloric performance data set, wherein the data set comprises alloy composition data, physical and chemical descriptors, external conditions and structural characteristics of a plurality of amorphous alloy samples and corresponding experimental values of maximum magnetic entropy change and Curie temperature; step 2, screening and optimizing the features in the data set, eliminating the collinearity between the features and performing recursive feature elimination to determine the final feature subsets for predicting the maximum magnetic entropy change and the Curie temperature respectively; and step 3, establishing machine learning models for predicting the maximum magnetic entropy change and the Curie temperature respectively through the final feature subsets, and training and optimizing the models to obtain the trained prediction models. The application realizes a closed loop of high-precision performance prediction, physical mechanism analysis and directional composition design.

The invention relates to a method for producing a helical magnetized rod (12), comprising the following steps: injecting a mixture () containing magnetic particles and at least one binder-forming polymer into a cylindrical tube (); -heating the mixture to a heating temperature between the glass transition temperature of the binder and the Curie temperature of the magnetic particles; aligning the magnetic particles such that the direction of magnetic orientation thereof extends in a plane orthogonal to the longitudinal axis () of the tube and continuously varies with the distance of the plane from one end of the tube; and-cooling the mixture to a cooling temperature below the glass transition temperature of the binder.

Broadband high T c High-conductivity manganese-zinc ferrite and preparation method, belong to ferrite material preparation technical field. High specific surface area raw material is adopted, contact area of powder in ball milling process is increased, reaction activity is improved, and sintering temperature is reduced; MnZn ferrite main formula adopts iron-rich zinc-deficient system, superexchange interaction is enhanced, and material Curie temperature is realized; secondary ball milling introduces combined additives, sintering process grain growth mechanism is regulated by means of fluxing and crystal resistance dual effects, Co2O3 is used to compensate MnZn ferrite magnetic crystal anisotropy constant, and initial magnetic permeability is improved; CaSiO3 is introduced, and is enriched in grain boundary in the sintering process, grain boundary resistivity is improved, and magnetic permeability frequency characteristic is improved; in the sintering process, oxygen partial pressure is accurately controlled in the holding and cooling stages, Fe 2+ Ion generation amount is influenced, sample resistivity is improved, and suitable sintering temperature and holding time are beneficial to grain growth and material densification.

The invention relates to a receptor material and a preparation method thereof, and belongs to the technical field of receptor materials. The receptor material comprises the following chemical components in percentage by mass: 40-55% of Ni, 0.1-1.0% of Cu, 0-15% of Co, and less than or equal to 0.1% of C, Si, Mn, Cr, Mo, Al, P and S in total content. According to the embodiment of the invention, the Curie temperature, the resistivity and the saturation induction density of the material are accurately regulated and controlled by adjusting and optimizing the content of each element, and the performance requirements are met: the Curie temperature is 400-550 DEG C, the resistivity is 0.018 * 10 <-6 > omega.m to 0.25 * 10 <-6 > omega.m, and the saturation induction density is gt; and 1.4 T.

The invention discloses a light collimator based on magnetic particles and low-melting-point glass and a manufacturing method thereof. The manufacturing method comprises the following steps: uniformly mixing a low-melting-point glass raw material and the magnetic particles; the melting point of the low-melting-point glass is 300 DEG C to 500 DEG C; placing the obtained mixture in a heating device, and controlling the heating temperature to be within the melting point range of the low-melting-point glass raw material and to be lower than the Curie temperature of the magnetic particles; then adding a dispersing agent; pouring the uniformly mixed solution into a mold, and placing the mold in a uniform magnetic field with an unchanged magnetic field direction, so that the magnetic particles are arranged into a plurality of chain-shaped aggregates parallel to the magnetic field direction under the action of the magnetic field, and the chain-shaped aggregates are parallel to one another; and after complete cooling and solidification, the magnetic field effect is removed, and the optical collimator based on the magnetic particles is manufactured. Therefore, the technical problems that an existing optical collimator is poor in high temperature resistance and corrosion resistance and limited in light-transmitting wave band are solved.

In an aspect of the present invention, a new active optic is provided, namely, a photo-magnetically actuated deformable mirror (PMADM) made of a magnetic composite structure and an optical quality substrate layer. The magnetic layer is composed of Polydimethylsiloxane (PDMS) and powdered ferromagnetic CrO2. A magnet may be used to deform the mirror surface. The powdered CrO2 has a low Curie temperature (preferably around 395 K) which allows changing the magnetization of the magnetic layer using a laser heating source, thus providing control over the deformation. In one embodiment, the structure has an overall dimension of 1.2 inch 1.2 inch 175 μm with an optical pupil diameter of 8 mm. The PMADM is estimated to deform to a maximum stroke of 8.7731 μm before failure with a 3 safety factor.

The application discloses a preparation method of a wide-temperature-range large-magnetic-entropy lanthanum-iron-silicon-based room-temperature magnetic refrigeration material, which uses La, Fe, Co and Si powders as raw materials, and prepares the wide-temperature-range large-magnetic-entropy lanthanum-iron-silicon-based room-temperature magnetic refrigeration material through high-energy ball milling of the raw materials under a protective atmosphere, and then through pressing and annealing heat treatment. The high-energy ball milling-annealing method for preparing the lanthanum-iron-silicon-based room-temperature magnetic refrigeration material has the advantages that the obtained lanthanum-iron-silicon-based room-temperature magnetic refrigeration material has a Curie temperature in a room-temperature range, a wide working temperature range and excellent magnetic heat performance, can provide a new idea for preparation of high-performance lanthanum-iron-silicon-based room-temperature magnetic refrigeration material, and has the advantages of simple preparation process, low cost, low requirement on reaction equipment and suitability for popularization and application.

The embodiment of the application discloses high magnetic permeability manganese-zinc ferrite broadband material KAH150 material and a preparation method thereof, the material has the magnetic permeability ui in the range of 10000-15000+ / -25% under the condition of 10-200KHZ frequency; the Curie temperature Tc of the material is greater than 130 DEG C; the method comprises the following steps: obtaining raw materials according to the proportioning mode that Fe2O3 is 51.2-54.5mol%, ZnO is 19.1-22.40mol%, and the rest is MnO; the raw materials are sequentially subjected to ball milling, pre-sintering, secondary sand milling, spray granulation, blank preparation and sintering treatment, and the high magnetic permeability manganese-zinc ferrite broadband material KAH150 material is obtained. Through the combination adjustment of fixed formula and doping, the material magnetic permeability can still maintain ui >=10000 at 200KHZ, and the high-frequency performance is greatly improved.

The present application relates to a sensor, an aerosol-generating device, and an aerosol-forming article. The sensor comprises: a first sensing part used for generating heat when penetrated by a varying magnetic field, so as to heat an aerosol-generating article, wherein the first sensing part has a first Curie temperature; a second sensing part connected to the first sensing part to sense the temperature of the first sensing part, wherein the second sensing part is configured such that there is a monotonic function relationship between the magnetic permeability thereof and the temperature thereof within the temperature range between a first temperature and a second temperature; and a third sensing part connected to the first sensing part to sense the temperature of the first sensing part, wherein the third sensing part has a third Curie temperature. The first Curie temperature is greater than the second temperature, and the third Curie temperature is greater than or equal to the first temperature and less than the second temperature.

The invention relates to a method for preparing a single-domain thin film of ferroelectric material, the method comprising transferring the layer from a donor substrate to a recipient substrate, followed by heat treatment (Stab) and then thinning (Thin), the heat treatment comprising: heating to a high temperature between 400°C and the Curie temperature of the ferroelectric material forming the layer; holding the temperature for a period exceeding 30 minutes; and then cooling, the heating comprising a ramp at a rate of temperature change greater than or equal to 7°C / min, such that the transferred ferroelectric layer reaches a temperature between 400°C and the Curie temperature at the end of the ramp. Figure 2

The invention provides a layered Van der Waals material with full-compensation ferrimagnetism and a topological Hall effect as well as a preparation method and application of the layered Van der Waals material. The chemical formula of the material is MnxCrTe2, wherein 0 lt; and x is 1. The material provided by the invention has a wide compensation temperature range, a large magnetoresistance effect, anisotropy and a topological Hall effect, is a CrTe2 intercalation ferromagnetic material doped in different proportions, and can realize optimization and continuous adjustability of performances such as magnetism, Curie temperature and Hall parameters of the material through regulation and control of mechanisms such as the doping proportion, the temperature and the magnetic field; and a material basis is provided for researching the application of the Mn intercalation CrTe2 crystal material in the field of magnetic induced storage.

The application discloses a novel high-power thermomagnetic power generation device, which comprises a support, an induction coil, a first permanent magnet, a second permanent magnet, a fluid tank and a movement module; the support comprises a bottom plate, a top plate and support columns, the bottom plate is installed at the lower end of the support columns, and the top plate is installed at the upper end of the support columns; the induction coil is vertically arranged on the upper surface of the top plate; the first permanent magnet is vertically movably arranged in the induction coil; the second permanent magnet is arranged on the bottom plate; the fluid tank is arranged above the second permanent magnet; the movement module comprises a magnetic heat element and a driving assembly; the magnetic heat element is vertically movably arranged above the fluid tank, the upper end of the magnetic heat element is connected with the lower end of the first permanent magnet, the driving assembly is installed on the support, and the driving assembly is connected with the magnetic heat element and used for providing an upward driving force for the magnetic heat element; wherein the magnetic heat element is a magnetic heat material, and the fluid tank is provided with a hot fluid with a temperature higher than the Curie temperature of the magnetic heat element. The novel high-power thermomagnetic power generation device improves the output power of the thermomagnetic power generation device.

The application relates to a nickel-zinc-copper ferrite material and a preparation method and application thereof, and the nickel-zinc-copper ferrite material comprises main components and auxiliary components; the main components comprise the following components in a total mass percentage of 100wt%: Fe2O3 64.5-66.5wt%, NiO 9-12wt%, ZnO 13.5-18.5wt%, CuO 3-10wt%; the auxiliary components comprise the following components in the total mass percentage of the main components: Bi2O3 0.3-1.5wt%, Co2O3 0.1-0.6wt%, CaCO3 0.03-0.08wt%, ZrO2 0.01-0.1wt%. The nickel-zinc-copper ferrite material prepared by the application has high saturation magnetic induction intensity, high magnetic permeability, high Curie temperature, low residual magnetic induction intensity and low specific temperature coefficient, and can be better applied to power inductance or common mode inductance.

The invention discloses a TbSmFe material with excellent high-temperature magnetostriction performance and a preparation method thereof.According to the TbSmFe material, after (1-x) TbFe2-xSmFe2 system alloy is subjected to heat treatment, the Curie temperature of a heat treatment sample is obviously increased compared with the Curie temperature (653K) of a commercial magnetostriction material Terfenol-D, meanwhile, the TbSmFe material has the excellent high-temperature magnetostriction performance, and the high-temperature magnetostriction performance is good. The room temperature parallel magnetostriction reaches 1961 ppm, and the room temperature to 150 DEG C parallel magnetostriction is greater than 1000 pmm. The magnetostrictive material provided by the invention is simple in preparation process, can be industrially produced, and has a wide application prospect in the fields of aerospace, oil drilling and the like.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

A low thermal expansion cast steel having a sufficient strength even at a high temperature and having a low coefficient of thermal expansion, that is, a low thermal expansion cast steel comprising, by mass %, C: 0 to 0.100%, Si: 0 to 1.00%, Mn: 0 to 1.00%, Co: 8.0 to 13.0%, and Ni satisfying −2.5×% Ni+85.5≤% Co≤−2.5×% Ni+90.5 (% Ni and % Co respectively being contents of Ni and Co (mass %)) and having a balance of Fe and unavoidable impurities and having, upon being subjected to suitable heat treatment, a 0.2% proof stress of a tensile test at 300° C. of 125 MPa or more, having an average coefficient of thermal expansion at 25 to 300° C. of 4.0 ppm / ° C. or less, and having a Curie temperature of 250° C. or more.

This invention discloses a Ba / Sm / Ce / Fe / Sb / Mn / Mo doped Bi3TiNbO9 high-temperature piezoelectric ceramic material and its preparation method, targeting the Bi at the A-site of the Bi3TiNbO9 ceramic material. 3+ Ions, using Ba 2+ 、Sm 3+ Ce 4+ The complex high-valence ion [Ba 0.1 Sm 0.3 Ce 0.6 ] 3.5+ Doping substitution is performed on Fe at the B site. 2+ Sb 5+ Mn 4+ Mo 6+ Composition of complex high-valence ions [Fe 0.25 Sb 0.75 ] 4.25+ 、[Mn 0.35 Mo 0.65 ] 5.3+ By employing doping substitution and the aforementioned composite doping modification, the piezoelectric properties and high-temperature resistivity are improved while maintaining a high Curie temperature. This results in a novel, environmentally friendly piezoelectric ceramic material with excellent overall electrical properties. This material exhibits good high-temperature stability and has broad application prospects in high-temperature fields. The preparation method of this invention utilizes advanced ceramic preparation technology, with low firing temperature, low preparation cost, simple and easy-to-operate process, and easily controllable influencing factors, making it suitable for mass industrial production and facilitating its promotion and application.