155 results about "Spontaneous polarization" patented technology

The present disclosure provides a semiconductor green laser. The semiconductor green laser, from bottom to top, comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The active layer is a quantum well composed of well layers and barrier layers. Each of the well layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. Each of the barrier layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. An electron effective mass of each of the well layers is less than an electron effective mass of each of the barrier layers. A spontaneous polarization coefficient of each of the well layers is less than a spontaneous polarization coefficient of each of the barrier layers.

Semiconductor light-emitting devices are provided, which includes a substrate, a Negative-type semiconductor, a quantum well, an electron-blocking layer, and a Positive-type semiconductor arranged in a sequential stack. The quantum well includes a first quantum well, a second quantum well, and a third quantum well. Optical parameters of the first quantum well, the second quantum well, and the third quantum well are distributed in a gradient in at least one direction. The quantum well includes a periodic structure consisting of a well layer and a barrier layer. A coefficient of thermal expansion of the well layer is smaller than or equal to that of the barrier layer. An elastic coefficient of the well layer is smaller than or equal to that of the barrier layer. A lattice constant of the well layer is greater than or equal to that of the barrier layer. A coefficient of spontaneous polarization of the well layer is smaller than or equal to that of spontaneous polarization of the barrier layer.

An electromagnetic wave detector includes a first ferroelectric layer, a two-dimensional material layer, a first electrode pair, and a second electrode pair. The first electrode pair includes a first electrode and a second electrode. The second electrode pair includes a third electrode and a fourth electrode. The first electrode pair and the second electrode pair are electrically connected to the two-dimensional material layer. The third electrode and the fourth electrode are disposed to face each other in a first direction perpendicular to a polarization direction of spontaneous polarization of the first ferroelectric layer. The first electrode and the second electrode are disposed to face each other in a second direction different from the first direction.

The invention belongs to the technical field of lithium ion solid-state batteries, and relates to a composite polymer electrolyte membrane as well as a preparation method and application thereof. The preparation method of the composite polymer electrolyte membrane comprises the following steps: generating a precursor salt containing Ba and Ti on the surface of an inorganic solid electrolyte through a wet chemical method, and forming a compact barium titanate coating layer on the surface of the electrolyte in a high-temperature calcination process to obtain the barium titanate surface modified inorganic solid electrolyte; uniformly dissolving a high-molecular polymer material, the barium titanate surface modified inorganic solid electrolyte and a lithium salt in a solvent, heating and stirring to prepare a uniform solution; and drying to form a membrane to obtain the polymer composite electrolyte membrane. Barium titanate has a special piezoelectric property and can be spontaneously polarized in a crystal structure to generate a polarization field, and the polarization field can sensitively sense the nonuniformity of lithium ion transmission dynamics and interact with the nonuniformity to balance the transmission process of lithium ions in the solid electrolyte, so that the bottleneck problem of ion migration in the traditional electrolyte is solved.

The invention discloses a semiconductor device and a preparation method thereof, a power module, a power conversion circuit and a vehicle. The semiconductor device comprises a semiconductor body which comprises a first surface and a second surface which are oppositely arranged; the semiconductor body comprises a first epitaxial layer and a second epitaxial layer, and the first epitaxial layer is used for supporting the second epitaxial layer; the conduction type of the second epitaxial layer is opposite to that of the first epitaxial layer; the semiconductor body comprises a silicon carbide material; or the semiconductor body comprises a gallium nitride material; the second epitaxial layer comprises a well region and a first region, and the well region and the second epitaxial layer have the same conduction type and doping concentration; the gate structure comprises a gate dielectric layer, a gate and an interlayer dielectric layer; the dielectric constant of the gate dielectric layer is larger than that of silicon oxide, the dielectric capacitance of the gate dielectric layer is a negative value, and the gate dielectric layer has a spontaneous polarization characteristic. According to the technical scheme provided by the embodiment of the invention, the switching speed and the reliability of the semiconductor device are improved.

The invention discloses a nitride semiconductor laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a self-bound exciton polariton layer is arranged between the lower waveguide layer and the lower limiting layer. The self-bound exciton polariton layer comprises a first self-bound exciton polariton layer and a second self-bound exciton polariton layer. According to the invention, a topological monoclinic phase periodic ferroelectric domain is provided, strong out-of-plane spontaneous polarization is formed to induce self-bound exciton polaritons, free exciton bound energy is increased from less than 10 meV to more than 20 meV, a temperature threshold of laser exciton radiation is reduced, and exciton optical radiation can be realized at room temperature or higher temperature.

In a semiconductor element including a silicon carbide heterostructure, the resistance component generated due to spontaneous polarization at the hetero-matched interface is suppressed, thereby reducing the specific on-resistance of the semiconductor element. A hetero-matched interface (S X ) and 1 × 10 19 cm -3 The tunnel doped region (D T By providing the layer, a carrier transport mechanism by tunneling is realized, and the specific on-resistance of the semiconductor element is kept low.

The invention discloses a two-dimensional material photoelectric detector based on a ferroelectric pyroelectric effect. The two-dimensional material photoelectric detector comprises a ferroelectric functional layer; the double-layer electrode is positioned above the ferroelectric functional layer; the two-dimensional material thin film is arranged above the double-layer electrode and is in contact with the ferroelectric functional layer; the spontaneous polarization direction of the ferroelectric is perpendicular to the thickness direction of the two-dimensional material film; the double-layer electrode comprises an upper metal layer and a lower metal layer, and the lower metal layer is in contact with the ferroelectric functional layer and is used for enhancing the binding force between the upper metal layer and the ferroelectric functional layer; the upper metal layer has a conductive function; the two-dimensional material film is a photosensitive area of the detector and is used for receiving irradiation of a light source.

The invention discloses a method for screening strontium potassium niobate ceramics with high spontaneous polarization intensity, which comprises the following steps: introducing oxygen vacancy, A-site cation (K + and Sr < 2 + >) vacancy and B-site cation (Nb15 + and Nb25 +) vacancy structures by considering that K < + >, Sr < 2 + > and a small amount of Nb5 < + > are easy to volatilize when KSN is sintered at a high temperature and along with the generation of oxygen vacancy, and calculating the oxygen vacancy according to a first principle calculation thought; the strontium potassium niobate ceramic with high spontaneous polarization intensity is screened according to the spontaneous polarization intensity of strontium potassium niobate existing in A-site cation vacancy (K < + > vacancy and Sr < 2 + > vacancy) and oxygen vacancy and B-site cation vacancy (Nb5 < + > vacancy) and oxygen vacancy; a first principle method is adopted for theoretical calculation, the strontium potassium niobate material component with high spontaneous polarization intensity is theoretically screened out, on-demand design is achieved, the research and development period is shortened, theoretical guidance is provided for actual experiments, and the experiment time and cost are saved.

Various aspects relate to a memory device including: a plurality of gate layer stacks, wherein each gate layer stack of the plurality of gate layer stacks includes a gate electrode layer and one or more electrically insulating layers; one or more channel structures extending through the plurality of gate layer stacks, wherein the plurality of gate layer stacks and the one or more channel structures correspond to a plurality of field-effect transistor based memory cells, wherein each field-effect transistor based memory cell of the plurality of field-effect transistor based memory cells includes: a gate layer portion of a gate layer stack of the plurality of gate layer stacks; a channel portion of a channel structure of the one or more channel structures; a spontaneously-polarizable portion; and a floating gate, wherein the spontaneously-polarizable portion and the floating gate are disposed between the gate layer portion and the channel portion.

Embodiments of the present description provide a semiconductor green laser. The semiconductor green laser successively comprises, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105). The active layer (103) is a quantum well consisting of a well layer and a barrier layer, the period of the quantum well is z, and z is greater than or equal to 1 and less than or equal to 3; the well layer comprises any one or any combination of aluminum indium gallium nitride (AlInGaN), aluminum indium nitrogen (AlInN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitrogen (InGaN), and gallium nitride (GaN), the thickness of the well layer is p, and p is greater than or equal to 5 angstroms and less than or equal to 100 angstroms; the barrier layer comprises any one or any combination of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, the thickness of the barrier layer is q, and q is greater than or equal to 10 angstroms and less than or equal to 200 angstroms; and the electron effective mass of the well layer is smaller than that of the barrier layer, the spontaneous polarization coefficient of the well layer is smaller than that of the barrier layer, and the band gap of the well layer is smaller than that of the barrier layer.

The invention discloses a high-performance lead-free piezoelectric catalytic material and a preparation method and application thereof, and belongs to the field of catalytic materials and pollution abatement, the preparation method of the lead-free piezoelectric catalytic material comprises the following steps: weighing K2CO3, Na2CO3, Nb2O5, Fe2O3 and Co2O3, mixing, performing ultrasonic dispersion treatment, and then performing grinding and presintering treatment to obtain precursor powder; grinding the precursor powder again, and then tabletting to obtain a green body; the green body is subjected to sintering treatment and grinding treatment in sequence, and ceramic powder is obtained; the ceramic powder is placed in pure water for ultrasonic treatment, then drying treatment is conducted, and the lead-free piezoelectric catalytic material is obtained. The potassium-sodium niobate-based lead-free piezoelectric catalytic material prepared through the processes of compact sintering, grinding, pure water ultrasonic treatment and the like has extremely high spontaneous polarization, has a very obvious effect on piezoelectric catalytic degradation of rhodamine B, and has the advantages of being environmentally friendly, efficient, high in catalytic activity, safe, stable, capable of reacting at normal temperature and the like.

A piezoelectric actuator comprises a stack of a plurality of piezoelectric films, a piezoelectric element having electrodes disposed between the piezoelectric films and at both end surfaces, and a drive circuit. Each of the plurality of piezoelectric films has asymmetric polarization-voltage hysteresis characteristics with two different absolute values of coercive voltage. The drive circuit applies a unipolar voltage waveform that generates an electric field in the same direction as the direction of spontaneous polarization in at least one layer from among the plurality of piezoelectric films and generates an electric field in the direction opposite to the direction of spontaneous polarization in the other piezoelectric films. A minimum voltage value V1 having a minimum absolute value in the unipolar voltage waveform is set such that the ratio of the slope T0 at 0 [V] to the slope T1 at the minimum voltage value V1 [V] in a hysteresis curve indicating bipolar polarization-hysteresis characteristics in another piezoelectric film satisfies |T0 / T1| ≥ 1.5.

The invention provides a photoelectric memory and a preparation method and a modulation method thereof, and belongs to the technical field of photoelectric memories. The photoelectric memory comprises a substrate; the polarization layer is located on the first surface of the substrate, and the polarization layer is made of a material with a spontaneous polarization effect; the photosensitive layer is located on the polarization layer or located between the substrate and the polarization layer, and the photosensitive layer is suitable for generating a photo-induced electron-hole pair in response to an optical signal incident to the photosensitive layer; wherein the polarization layer forms a built-in electric field in the photosensitive layer based on a spontaneous polarization effect, the built-in electric field is suitable for separating photo-generated electron-hole pairs, and the photoelectric memory realizes optical signal writing and nonvolatile storage based on a capture effect of a defect state of the photosensitive layer on photo-generated holes. The photoelectric memory provided by the invention has the advantages of good retention characteristic, high switch ratio and polymorphic storage capability.

The invention discloses a wide spectrum photoelectric detector based on AlScN (AlxScN). The wide-spectrum photoelectric detector based on the AlScN comprises an AlScN light absorption layer, a bottom electrode and a top electrode, the bottom electrode is arranged on the first face of the AlScN light absorption layer, the bottom electrode and the AlScN light absorption layer form Schottky contact, the top electrode is arranged on the second face of the AlScN light absorption layer, the top electrode and the AlScN light absorption layer form ohmic contact, and the AlScN light absorption layer is arranged on the second face of the AlScN light absorption layer. A built-in electric field inside the AlScN light absorption layer can help or restrain drift motion of carriers, so that the wide-spectrum photoelectric detector can work without external bias voltage, and the first face and the second face are arranged back to back. According to the invention, AlScN switchable unit cell spontaneous polarization is utilized to regulate and control a potential barrier and help or inhibit carrier transport at the same time, so that a photovoltaic photoelectric detection technology of optical information is obtained, and the photoelectric detector has the characteristics of wide spectrum detection, high reliability, small size, low energy consumption and the like.

The present invention relates to a laser with a strain-modulated upper waveguide layer and a growth method thereof. The semiconductor laser comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein the upper waveguide layer is a strain-modulated upper waveguide layer; the semiconductor laser forms a strain-modulated upper waveguide layer by regulating the peak electron drift rate distribution, deformation potential distribution, bulk elastic modulus distribution, and polarization optical phonon energy distribution of the upper waveguide layer, thereby suppressing spontaneous polarization and piezoelectric polarization effects, improving crystal quality, reducing non-radiative recombination, suppressing QCSE effects, reducing energy band tilt, and increasing the spatial overlap probability of electron-hole wave functions, thereby improving radiative recombination efficiency and reducing light absorption loss.

The present invention discloses a semiconductor laser comprising: a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in order from bottom to top; the active layer comprising a well layer and a barrier layer; the electron effective mass of the well layer of the active layer being smaller than the electron effective mass of the barrier layer, the spontaneous polarization coefficient of the well layer of the active layer being smaller than the spontaneous polarization coefficient of the barrier layer, and the bandgap width of the well layer of the active layer being smaller than the bandgap width of the barrier layer. The present invention can suppress InN phase separation, segregation, and composition fluctuation in high-In content semiconductor lasers, effectively improve the crystal quality and interface quality of the active layer, effectively enhance the electron-hole recombination efficiency of the active layer, and effectively reduce defects and non-radiative recombination centers, thereby effectively improving the slope efficiency of green lasers.

A ferroelectric liquid crystal (FLC) material for the deformed helix FLC (DHFLC) electro-optical mode devices and shows optimum electro-optical properties including high tilt angle (>38°), and short helix pitch (<120 nm), and spontaneous polarization (>100 nC / cm2) comprising at least two components, wherein at least one FLC component is a chiral compound of Formula (I):particularly:wherein W1 and W2 are chiral groups with polar substituent at chiral centre, A and B are independently N atom or CH groups providing that at least one of A or B is N atom. Other various groups are as defined herein.

To provide a liquid crystal composition and a liquid crystal display element, capable of preventing the occurrence of alignment defects.SOLUTION: The present invention provides a liquid crystal composition having spontaneous polarization, wherein a Ps variation ratio, representing a value calculated by dividing the spontaneous polarization value at 70°C by the spontaneous polarization value at 25°C, is 0.60 or more, and wherein the sum total of the content (wt.%) of compounds having three or more cyclic structures is greater than the sum total of the content (wt.%) of compounds having two or fewer cyclic structures. The present invention also provides a liquid crystal display element having the liquid crystal composition sealed therein.SELECTED DRAWING: Figure 8(b)

According to the semiconductor device and the power equipment provided by the invention, the 3C-SiC current-carrying layer is epitaxially grown on the carbon surface (000-1) of the 4H-SiC channel layer, due to spontaneous polarization of the 4H-SiC channel layer, 2DEG can be induced at the interface of the 3C-SiC current-carrying layer and the 4H-SiC channel layer, and very high 2DEG density can be realized. Theoretical calculation shows that the 2DEG surface density at the interface can reach 1.28 * 10 < 13 > / cm < 2 >. Based on the physical property, a power device structure using 2DEG as a control channel is designed, a 2DEG channel region formed based on a 3C-SiC and 4H-SiC heterogeneous interface and a schottky gate electrode on the 3C-SiC surface are realized, and a depletion type unipolar power device based on electron conduction is realized. The specific on-resistance of the device is effectively reduced through the high mobility of 2DEG formed by using a 3C-SiC and 4H-SiC heterogeneous interface.

A method for searching for ferroelectric materials, such as wurtzite crystal structures, that have low coercive fields and high spontaneous polarization values ​​using first-principles calculations is provided. [Solution] The method includes a first extraction step of obtaining, from a crystal structure database, ferroelectric material candidates with non-centrosymmetric symmetry as first candidates; a calculation step of calculating the band gap value, polarization reversal barrier energy value, and spontaneous polarization value of each first candidate obtained in the first extraction step using first-principles calculations; an insulating property determination step of determining whether the calculated band gap value satisfies insulating properties; a polarization reversal determination step of determining whether the calculated polarization reversal barrier energy value is within a range in which polarization reversal is possible; a spontaneous polarization determination step of determining whether the calculated spontaneous polarization value is within a range in which ferroelectric properties are exhibited; and a second extraction step of extracting, as ferroelectric materials, first candidates for which the determination results in the insulating property determination step, polarization reversal determination step, and spontaneous polarization determination step are all acceptable.

The present invention provides a semiconductor laser device provided with a quantum-confined Stark modulation layer, which sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top; quantum-confined Stark modulation layers are provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the quantum-confined Stark modulation layer utilizes the current-induced ferroelectric phase transition polarization effect to cause magnetostriction and ferrovalley coupling effects to regulate the strain field and polarization direction reversal under current injection conditions in the laser, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser device, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser device, reduce the excitation threshold of the laser device, enhance the confinement factor, and improve the peak gain of the laser device.

The utility model belongs to the technical field of LED epitaxial structures, and particularly discloses a wavelength-adjustable LED epitaxial structure, which comprises a patterned substrate, a buffer layer grown on the patterned substrate, a 3D + GR layer grown on the buffer layer, an N layer grown on the GR layer, and a polarization improvement layer grown between the GR layer and the N layer or between the buffer layer and the 3D layer. And the polarization improvement layer sequentially comprises an AlN1 layer, a ferroelectric material layer and an AlN2 layer. According to the utility model, a ferroelectric material layer (BaTiO, PbZrTiO3 and the like) is inserted into an N-type semiconductor, and spontaneous polarization can be generated under the action of an external electric field or stress by utilizing an important characteristic, namely polarization reversibility, of a ferroelectric material. When the ferroelectric material is plated below the N layer (electronic conducting layer), the polarization direction of the ferroelectric material can be regulated and controlled through an external electric field or stress. By adjusting the polarization direction and intensity, the fine adjustment of PN junction energy level distribution can be realized, so that the wavelength can be indirectly and quickly adjusted.

The utility model relates to a semiconductor laser element with a gradient polarization layer, which sequentially comprises a substrate, a lower coating layer, a lower wave layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, and is characterized in that the gradient polarization layer is arranged between the substrate and the lower coating layer. The piezoelectric polarization coefficient distribution, the spontaneous polarization coefficient distribution, the Philips ionization degree distribution, the elastic coefficient distribution, the covalent bond energy distribution, the polarization optical phonon energy distribution, the transverse sound velocity distribution, the saturated electron drift rate distribution and the like of the gradient polarization layer have special curve distribution; therefore, the semiconductor laser element has the advantages of reducing the polarization effect, reducing the hole migration barrier, reducing the electron leakage and the like.

The invention discloses a room-temperature ferroelectric material with an extremely low coercive field, a large spontaneous polarization value and a high Curie temperature and a preparation method and application thereof, the room-temperature ferroelectric material is a zero-dimensional organic-inorganic hybrid perovskite crystal material, has the following chemical formula (C2H8N) 4PbBr6, has the spontaneous polarization value of 2.3 [mu] C / cm < 2 > and the coercive field of 0.11 kV / cm, and has the Curie temperature of greater than 400 K, and the room-temperature ferroelectric material is a ferroelectric material with an extremely low coercive field, a large spontaneous polarization value and a high Curie temperature. Wide application prospects are realized in low-loss nonvolatile memories, sensors, capacitors, optical modulators, electromagnetic nondestructive testing and battery technologies.

In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV / cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN / GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

The invention relates to the technical field of accelerators, and particularly discloses a pyroelectric electrostatic analyzer which comprises a vacuum cavity, a first pyroelectric crystal, a second pyroelectric crystal and a temperature controller. The first pyroelectric crystal and the second pyroelectric crystal are arranged in the vacuum cavity; a gap is formed between the first pyroelectric crystal and the second pyroelectric crystal to form a channel; the spontaneous polarization vectors of the first pyroelectric crystal and the second pyroelectric crystal are parallel to each other, and the directions of the spontaneous polarization vectors are consistent; the temperature controller is used for controlling the temperature of the first pyroelectric crystal and the second pyroelectric crystal, so that the polarity of a ferroelectric domain in the pyroelectric crystal with temperature change is changed to generate pyroelectric high voltage, and electric field force is provided for charged particles entering the channel, so that the charged particles meeting the condition can pass through the channel; according to the pyroelectric electrostatic analyzer, a large-size high-voltage power supply and numerous complex high-voltage components are removed, and the pyroelectric electrostatic analyzer has great advantages in the aspects of cost, size and use safety.

To provide a resonant tunneling diode and a terahertz oscillator capable of further performance improvement. The resonant tunneling diode includes: a multi-quantum well structure that is composed of a group-III nitride semiconductor; a first electrode that is connected to one of sides of the multi-quantum well structure; and a second electrode that is connected to the other side of the multi-quantum well structure. The multi-quantum well structure includes a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, and a third barrier layer, which are arranged in order from the first electrode toward the second electrode. The first barrier layer, the second barrier layer, and the third barrier layer have a thickness through which a carrier can pass by a tunneling effect. The first quantum well layer and the second quantum well layer each have a potential gradient by spontaneous polarization or a sum of spontaneous polarization and piezoelectric polarization, and have mutually different thicknesses. The first quantum well layer and the second quantum well layer have compositions with different magnitudes of potential energy.

The embodiments of the present invention provide a method for improving the performance of optical devices, semiconductor optical devices and electronic equipment, and relate to the field of semiconductor optoelectronic technology. The present invention determines the spontaneous polarization intensity of the first compound, the bending parameter of the second compound and the piezoelectric polarization intensity of the material surface where the quantum well is located based on the quantum well's own parameters by constructing a correspondence between the external electric field intensity of the quantum well and the total polarization intensity of the material surface where the quantum well is located. Then, the total spontaneous polarization intensity of the material surface where the quantum well is located is determined based on the piezoelectric polarization intensity and the total polarization intensity. Finally, the material components of the quantum well are determined based on the total spontaneous polarization intensity, the spontaneous polarization intensity of the first compound and the bending parameter of the second compound, so that the polarization electrostatic field intensity of the quantum well is opposite in direction to the external electric field intensity and has the same value. The present invention has the advantage of improving the quantum efficiency and luminous efficiency of AlGaN-based semiconductor ultraviolet devices.

A ferroelectric nematic liquid crystal molecule and its application, relating to the technical field of optoelectronic materials, solves the problems of narrow phase transition temperature range, poor room temperature stability and difficulty in achieving ferroelectricity of traditional liquid crystal molecules due to symmetry restrictions in ferroelectric liquid crystal materials in the prior art. The ferroelectric nematic liquid crystal molecules ETA094 and ETB095 prepared by the present invention present a "V"-shaped liquid crystal molecular structure, and polar molecules are connected at the end groups of the "V"-shaped molecular structure. This structure breaks through the limitations of the symmetrical structure of traditional rod-shaped liquid crystal molecules, so that the molecules present chirality and have unique ferroelectricity, and make the intermolecular forces stronger, making it easier to form a liquid crystal phase with fluidity. The nematic ferroelectric liquid crystal molecules prepared by the present invention can achieve an ultra-wide phase transition temperature of ‑100°C to 250°C, and are high-performance ferroelectric liquid crystal materials with high spontaneous polarization intensity and strong nonlinear optical response, and have broad application prospects.