The present application relates to a kind of
barrier layer structures with asymmetric
insertion layer, including
barrier layer,
barrier layer is used to form source, gate and drain,
insertion layer is embedded in barrier layer inside,
insertion layer forms
first insertion section between source to gate, forms second insertion section between gate to drain, the thickness of
first insertion section is less than the thickness of second insertion section;A kind of power device, including barrier layer structure with asymmetric insertion layer.In the present application, the
spontaneous polarization,
piezoelectric polarization effect of asymmetric insertion layer is much stronger than barrier layer, the insertion layer of gate, drain side is thicker, resulting in local barrier being higher,
electric field peak spontaneously migrates from gate edge to drain side and gradually reduces, the distribution of peak
electric field is optimized, and the overall performance of device is improved;The
breakdown voltage of the present application is effectively improved, peak
electric field is significantly reduced, Ron is not degraded basically, current collapse effect is significantly inhibited, meet the design requirements of high-
voltage GaN HEMT.