9146results about How to "Facilitated Diffusion" patented technology

The invention relates to the discovery of novel soluble neutral active Hyaluronidase Glycoproteins (sHASEGPs), methods of manufacture, and their use to facilitate administration of other molecules or to alleviate glycosaminoglycan associated pathologies. Minimally active polypeptide domains of the soluble, neutral active sHASEGP domains are described that include asparagine-linked sugar moieties required for a functional neutral active hyaluronidase domain. Included are modified amino-terminal leader peptides that enhance secretion of sHASEGP. The invention further comprises sialated and pegylated forms of a recombinant sHASEGP to enhance stability and serum pharmacokinetics over naturally occurring slaughterhouse enzymes. Further described are suitable formulations of a substantially purified recombinant sHASEGP glycoprotein derived from a eukaryotic cell that generate the proper glycosylation required for its optimal activity.

The invention relates to the discovery of novel soluble neutral active Hyaluronidase Glycoproteins (sHASEGPs), methods of manufacture, and their use to facilitate administration of other molecules or to alleviate glycosaminoglycan associated pathologies. Minimally active polypeptide domains of the soluble, neutral active sHASEGP domains are described that include asparagine-linked sugar moieties required for a functional neutral active hyaluronidase domain. Included are modified amino-terminal leader peptides that enhance secretion of sHASEGP. The invention further comprises sialated and pegylated forms of a recombinant sHASEGP to enhance stability and serum pharmacokinetics over naturally occurring slaughterhouse enzymes. Further described are suitable formulations of a substantially purified recombinant sHASEGP glycoprotein derived from a eukaryotic cell that generate the proper glycosylation required for its optimal activity.

Purified genes encoding a T cell surface antigen from a mammal, reagents related thereto including purified proteins, specific antibodies, and nucleic acids encoding this antigen are provided. Methods of using said reagents and diagnostic kits are also provided.

Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

Peptide ligands having affinity for serum albumin are useful for tumor targeting. Conjugate molecules comprising a serum albumin binding peptide fused to a biologically active molecule demonstrate modified pharmacokinetic properties as compared with the biologically active molecule alone, including tissue (e.g., tumor) uptake, infiltration, and diffusion.

Existing encryption systems are designed to protect secret keys or other data under a "black box attack," where the attacker may examine the algorithm, and various inputs and outputs, but has no visibility into the execution of the algotitm itself. However, it has been shown that the black box model is generally unrealistic, and that attack efficiency rises dramatically if the attacker can observe even minor aspects of the algorithm's execution. The invention protects software from a "white-box attack", where the attacker has total visibility into software implementation and execution. In general, this is done by encoding the software and widely diffusing sites of information transfer and / or combination and / or loss. Other embodiments of the invention include: the introduction of lossy subcomponents, processing inputs and outputs with random cryptographic functions, and representing algorithmic steps or components as tables, which permits encoding to be represented with arbitrary nonlinear bijections.

An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector region (26′). A carbon-bearing diffusion barrier (28c) is disposed over the buried collector region (26′), to inhibit the diffusion of dopant from the buried collector region (26′) into the overlying epitaxial layer (28). The diffusion barrier (28c) may be formed by incorporating a carbon source into the epitaxial formation of the overlying layer (28), or by ion implantation. In the case of ion implantation of carbon or SiGeC, masks (52, 62) may be used to define the locations of the buried collector regions (26′) that are to receive the carbon; for example, portions underlying eventual collector contacts (33, 44c) may be masked from the carbon implant so that dopant from the buried collector region (26′) can diffuse upward to meet the contact (33). MOS transistors (70, 80) including the diffusion barrier (28) are also disclosed.

A method for producing shaped articles of ceramic composites provides a high degree of dimensional tolerance to these articles. A fiber preform is disposed on a surface of a stable formed support, a surface of which is formed with a plurality of indentations, such as grooves, slots, or channels. Precursors of ceramic matrix materials are provided to the fiber preform to infiltrate from both sides of the fiber preform. The infiltration is conducted under vacuum at a temperature not much greater than a melting point of the precursors. The melt-infiltrated composite article substantially retains its dimension and shape throughout the fabrication process.

Fabrication of an asymmetric field-effect transistor (100) entails defining a gate electrode (262) above, and vertically separated by a gate dielectric layer (260) from, a channel-zone portion (244) of body material of a semiconductor body. Semiconductor dopant is introduced into the body material to define a more heavily doped pocket portion (250) using the gate electrode as a dopant-blocking shield. A spacer (264T) is provided along the gate electrode. The spacer includes (i) a dielectric portion situated along the gate electrode, (ii) a dielectric portion situated along the semiconductor body, and (iii) a filler portion (SC) largely occupying the space between the other two spacer portions. Semiconductor dopant is introduced into the semiconductor body to define a pair of main source / drain portions (240M and 240E) using the gate electrode and the spacer as a dopant-blocking shield. The filler spacer portion is removed to convert the spacer to an L shape (264). A pair of electrical contacts are formed respectively to the main S / D portions.

A system for authenticating a user in a network. The authentication system includes a computer resource having secure data, an authentication computing system providing dynamic authentication of a user accessing the computer resource, and a user communication device for communicating between the user and the computer resource. The computing system presents a challenge for which a specified response is required based upon a pre-determined function. Access is then granted by the computing system upon providing the correct response to the presented challenge by the user.

Light generating devices for illuminating portions of vascular tissue, to render photodynamic therapy. In one embodiment, a light source array preferably including a plurality of light emitting diodes, a focusing lens, and a light diffusing element are included in a distal end of a catheter. A balloon is optionally provided to interrupt blood flow that can block the transmission of light, and to center the apparatus in a blood vessel. Optical fibers optionally direct light from the light source to the diffusing element. The light source array can have a radial or linear configuration and can produce more than one wavelength of light for activating different photoreactive agents. Linear light source elements are particularly useful to treat elongate portions of tissue in a vessel. One embodiment intended for use with a conventional balloon catheter integrates light sources into a guidewire.

A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized by a resisitivity of at least 100 ohm-cm and an expansion coefficient compatible with the piezoelectric substrate. A catalytic bonding film between the piezoelectric substrate and the surrogate substrate is formed from a first catalytic bonding film deposited onto a surface of the piezoelectric substrate and a second catalytic bonding film deposited onto a surface of the surrogate substrate. The piezoelectric substrate is bonded to the surrogate substrate through a compression force sufficient for providing a bonding at a normal temperature.

An illumination apparatus, comprising at least one light emitting source embedded in a waveguide material is disclosed. The waveguide material is capable of propagating light generated by light emitting source(s), such that at least a portion of the light is diffused within the waveguide material and exits through at least a portion of its surface.

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than the crystallization temperature of the free layer material. The crystallization inhibiting layer inhibits the crystallization of the underlying free layer, providing improved thermal stability for the resistive memory device.

A water-soluble resin composition comprising (1) a water-soluble resin, (2) a water-soluble crosslinking agent, (3) at least one of surface active agents selected from acetylene alcohols, acetylene glycols, polyethoxylates of acetylene alcohols and polyethoxylates of acetylene glycols, and (4) a solvent consisting of water or a mixture of water and a water-soluble solvent. This water-soluble resin composition is applied onto a resist pattern, then heated to crosslink by an acid supplied from the resist, followed by development to remove the non-crosslinked water-soluble resin coating layer. This water-soluble resin composition is excellent in coating characteristics on steps of resist patterns and in dimensional regulation upon fining of patterns so that resist patterns such as trench patterns and hole patterns can effectively be fined.

Ink compositions with modified properties result from using a powder size below 100 nanometers. Colored inks are illustrated. Nanoscale coated, uncoated, whisker inorganic fillers are included. The pigment nanopowders taught comprise one or more elements from the group actinium, aluminum, antimony, arsenic, barium, beryllium, bismuth, cadmuim, calcium, cerium, cesium, chalcogenide, cobalt, copper, dysprosium, erbium, europium, gadolinium, gallium, gold, hafnium, hydrogen, indium, iridium, iron, lanthanum, lithium, magnesium, manganese, mendelevium, mercury, molybdenum, neodymium, neptunium, nickel, niobium, nitrogen, oxygen, osmium, palladium, platinum, potassium, praseodymium, promethium, protactinium, rhenium, rubidium, scandium, silver, sodium, strontium, tantalum, terbium, thallium, thorium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium.

The process for preparing tubular titanium oxide particles comprises subjecting a water dispersion sol, which is obtained by dispersing (i) titanium oxide particles and / or (ii) titanium oxide type composite oxide particles comprising titanium oxide and an oxide other than titanium oxide in water, said particles having an average particle diameter of 2 to 100 nm, to hydrothermal treatment in the presence of an alkali metal hydroxide. After the hydrothermal treatment, reduction treatment (including nitriding treatment) may be carried out. The tubular titanium oxide particles obtained in this process are useful as catalysts, catalyst carriers, adsorbents, photocatalysts, decorative materials, optical materials and photoelectric conversion materials. Especially when the particles are used for semiconductor films for photovoltaic cells or photocatalysts, prominently excellent effects are exhibited.

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

The present invention relates to methods and devices for formation of microconduits in tissue, particularly using an impedance sensing drill to form microconduits. One embodiment of the invention is an impedance sensing drill comprising a drilling assembly, a control module, mechanically connected to the drilling assembly for controlling the depth of drilling by the drilling assembly; and a sensor, electrically connected to the drilling assembly and control module for detecting a change in an electrical impedance of a material being drilled. Another embodiment is a method of forming a microconduit in a material, which comprises the steps of drilling into the material, monitoring an electrical impedance of the material, and stopping the drilling into the material when a change in the impedance is detected, thereby forming microconduit.

The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer, such as CVD Al or CVD Cu, is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD Cu. Next, a PVD Cu is deposited onto the previously formed CVD Cu layer at a temperature below that of the melting point temperature of the metal. The resulting CVD / PVD Cu layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Cu layer. The via fill process of the present invention is also successful with air-exposure between the CVD Cu and PVD Cu steps.

The present invention generally relates to a device for applying a pulsating pressure to a local region of the body and applications thereof. The device may be used to increase the blood flow in a local region of the body, and in preferred embodiments provides a device for regulating the core body temperature of a patient.

Artificial stoma formed with multilayered structures that actuate with humidity, temperature, chemical environment or light. These actuators can be incorporated into shoes, apparel, fuel cells, machinery, and buildings to control fluid flow or diffusion to regulate humidity, temperature, chemical environment, or light. These actuators can be used as sensors, modify structure, or appearance for greater function, comfort, or aesthetics.

The present invention relates to methods for making oxidation resistant medical devices that comprise polymeric materials, for example, ultra-high molecular weight polyethylene (UHMWPE). The invention also provides methods of making antioxidant-doped medical implants, for example, doping of medical devices containing cross-linked UHMWPE with vitamin E by diffusion and materials used therein.

There is described a method of encrypting a set of 2D input data, preferably image data. The method comprises obtaining the hash value of a password and re-sizing the hash value to fir the size of the 2D input data. The re-sized data is transformed using an irreversible transform, and the output of the transform is then used to encode the 2D data.

A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS transistor's polysilicon gate electrode. Fabrication of the shallow field oxide region is performed through a hard “bump” mask and controlled such that the bump oxide extends a minimal depth into the LDMOS transistor's drift (channel) region. The hard “bump” mask is also utilized to produce an N-type drift (N-drift) implant region and a P-type surface effect (P-surf) implant region, whereby these implants are “self-aligned” to the gate dielectric structure. The N-drift implant is maintained at Vdd by connection to the LDMOS transistor's drain diffusion. An additional Boron implant is utilized to form a P-type buried layer that connects the P-surf implant to the P-body region of the LDMOS transistor, whereby the P-surf implant is maintained at 0V.