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1955 results about "Gadolinium" patented technology

Gadolinium is a chemical element with the symbol Gd and atomic number 64. Gadolinium is a silvery-white metal when oxidation is removed. It is only slightly malleable and is a ductile rare-earth element. Gadolinium reacts with atmospheric oxygen or moisture slowly to form a black coating. Gadolinium below its Curie point of 20 °C (68 °F) is ferromagnetic, with an attraction to a magnetic field higher than that of nickel. Above this temperature it is the most paramagnetic element. It is found in nature only in an oxidized form. When separated, it usually has impurities of the other rare-earths because of their similar chemical properties.

Porous semiconductor and process for producing the same

The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center.
In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.
Owner:SUMITOMO ELECTRIC IND LTD

Rare earth aluminum alloy, and method and device for preparing same

The invention discloses a rare earth aluminum alloy, and a method and a device for preparing the same. The alloy contains at least one rare earth metal of lanthanum, cerium, praseodymium, neodymium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, lutetium, scandium and yttrium, the content of raw earth is 5 to 98 weight percent, and the balance is aluminum and inevitable impurities. The device for preparing the rare earth aluminum alloy is characterized in that: a) graphite serves as an electrolysis bath, a graphite plate is an anode, a tungsten bar is a cathode and a molybdenum crucible serves as a rare earth aluminum alloy receiver; b) the diameter of the tungsten bar is 30 to 55 mm; and c) the anode of the graphite consists of a plurality of graphite plates. The rare earth aluminum alloy, and the method and the device for preparing the same have the advantages that: the alloy has uniform components, little segregation and low impurity content; technology for preparing the rare earth aluminum alloy through fusion electrolysis can maximally replace a process for preparing single medium-heavy metal through metallothermic reduction, greatly reduce energy consumption and the emission of fluorine-containing tail gas and solid waste residue, improve current efficiency and metal yield and reduce the consumption of auxiliary materials and the energy consumption; and the rare earth aluminum alloys with different rare earth contents can be obtained by controlling different electrolytic temperatures and different cathode current densities.
Owner:GRIREM ADVANCED MATERIALS CO LTD
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