7570results about "Irradiation devices" patented technology

A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.

The Laser Induced Fluorescence Attenuation Spectroscopy (LIFAS) method and apparatus preferably include a source adapted to emit radiation that is directed at a sample volume in a sample to produce return light from the sample, such return light including modulated return light resulting from modulation by the sample, a first sensor, displaced by a first distance from the sample volume for monitoring the return light and generating a first signal indicative of the intensity of return light, a second sensor, displaced by a second distance from the sample volume, for monitoring the return light and generating a second signal indicative of the intensity of return light, and a processor associated with the first sensor and the second sensor and adapted to process the first and second signals so as to determine the modulation of the sample. The methods and devices of the inventions are particularly well-suited for determining the wavelength-dependent attenuation of a sample and using the attenuation to restore the intrinsic laser induced fluorescence of the sample. In turn, the attenuation and intrinsic laser induced fluorescence can be used to determined a characteristic of interest, such as the ischemic or hypoxic condition of biological tissue.

A liquid-filled balloon may be positioned between a workpiece, such as a semiconductor structure covered with a photoresist, and a lithography light source. The balloon includes a thin membrane that exhibits good optical and physical properties. Liquid contained in the balloon also exhibits good optical properties, including a refractive index higher than that of air. Light from the lithography light source passes through a mask, through a top layer of the balloon membrane, through the contained liquid, through a bottom layer of the balloon membrane, and onto the workpiece where it alters portions of the photoresist. As the liquid has a low absorption and a higher refractive index than air, the liquid-filled balloon system enhances resolution. Thus, the balloon provides optical benefits of liquid immersion without the complications of maintaining a liquid between (and in contact with) a lithographic light source mechanism and workpiece.

The present invention relates to an apparatus for treating the surface with neutral particle beams comprising an antenna container, a plasma generating part, a neutral particle beam generating part and a treating part, wherein the antenna container comprises antennas connected to high frequency electric power supply through which high frequency electric power supplies, the plasma generating part transfers gases from a gas injector into plasmas with the supplied power, the neutral particle beam generating part reverts the obtained plasmas to neutral particle beams via the collision thereof with metal plates, and the treating part treats the surface of a target with the neutral particle beams.

An imaging apparatus and related method comprising a source that projects a beam of radiation in a first trajectory; a detector located a distance from the source and positioned to receive the beam of radiation in the first trajectory; an imaging area between the source and the detector, the radiation beam from the source passing through a portion of the imaging area before it is received at the detector; a detector positioner that translates the detector to a second position in a first direction that is substantially normal to the first trajectory; and a beam positioner that alters the trajectory of the radiation beam to direct the beam onto the detector located at the second position. The radiation source can be an x-ray cone-beam source, and the detector can be a two-dimensional flat-panel detector array. The invention can be used to image objects larger than the field-of-view of the detector by translating the detector array to multiple positions, and obtaining images at each position, resulting in an effectively large field-of-view using only a single detector array having a relatively small size. A beam positioner permits the trajectory of the beam to follow the path of the translating detector, which permits safer and more efficient dose utilization, as generally only the region of the target object that is within the field-of-view of the detector at any given time will be exposed to potentially harmful radiation.

Techniques for cold implantation of carbon-containing species are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation including a cooling device for cooling a target material to a predetermined temperature, and an ion implanter for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.

An optical detection and orientation device is provided comprising housing having an excitation light source, an optical element for reflecting the excitation light to an aspherical lens and transmitting light emitted by a fluorophore excited by said excitation light, a focussing lens for focusing the emitted light onto the entry of an optical fiber, which serves as a confocal aperture, and means for accurately moving said housing over a small area in relation to a channel in a microfluidic device. The optical detection and orientation device finds use in identifying the center of the channel and detecting fluorophores in the channel during operations involving fluorescent signals.

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

An apparatus (10) for irradiating a target includes a radiation source (12) for generating a radiation beam and a multiple leaf beam adjuster (16) for collimating and adjusting the shape of the radiation beam from the radiation source (12) that would be projected on the target. An image detector (17) detects generates an image signal of the target. In response to the image signal, a control module (18) generate a beam adjustment signal for controlling the beam adjuster (16), thereby enabling the radiation beam from the radiation source (12) to track the movement of the target.

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

A method for determining a radiation treatment plan for a radiotherapy system providing multiple individual rays of intensity modulated radiation iteratively optimized the fluence of an initial set of such rays by a function that requires knowledge of only the prescribed dose and the dose resulting from the particular ray fluences. In this way, the need to store individual dose distributions of each ray are eliminated.

An exposure apparatus includes a projection optical system for projecting an image of a pattern of a reticle onto an object, via a fluid that is filled in a space between said projection optical system and the object, a vibrator part for vibrating at least one of the fluid, the object, and the projection optical system, and a controller for controlling the vibrator part so that the vibration of at least one of the fluid, the object, and the projection optical system becomes a tolerance during a processing of the object.

The invention concerns an illumination system for wavelengths <=193 nm, particularly for EUV lithography, with at least one light source, which has an illumination A in a predetermined surface; at least one device for producing secondary light sources; at least one mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements; one or more optical elements, which are arranged between the mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements and the reticle plane, whereby the optical elements image the secondary light sources in the exit pupil of the illumination system.The illumination system is characterized by the fact that the raster elements of the one or more mirror or lenses are shaped and arranged in such a way that the images of the raster elements cover by means of the optical elements the major portion of the reticle plane and that the exit pupil defined by aperture and filling degree is illuminated.

A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.

The invention concerns a method for treating a target volume with a particle beam, in particular a proton beam, which consists in generating said particle beam using an accelerator and in producing from said beam a narrow spot directed towards the target volume, characterized in that said spot sweeping speed and the particle beam intensity are simultaneously varied.

The invention concerns an illumination system, particularly for microlithography with wavelengths <=193 nm, comprising a light source, a first optical component, a second optical component, an image plane and an exit pupil. The first optical component transforms the light source into a plurality of secondary light sources being imaged by the second optical component in said exit pupil. The first optical component comprises a first optical element having a plurality of first raster elements, which are imaged into said image plane producing a plurality of images being superimposed at least partially on a field in said image plane. The first raster elements deflect incoming ray bundles with first deflection angles, wherein at least two of the first deflection angles are different. The first raster elements are preferably rectangular, wherein the field is a segment of an annulus. To transform the rectangular images of the first raster elements into the segment of the annulus, the second optical component comprises a first field mirror for shaping the field to the segment of the annulus.

A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), an orifice electrode (5) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (4) disposed upstream of the orifice electrode (5) in the vacuum chamber (3). The orifice electrode (5) has orifices (5a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (5) and the grid electrode (4) via a dielectric (5b) to extract positive ions from the plasma generated by the plasma generator and pass the extracted positive ions through the orifices (5a) in the orifice electrode (5).

A radiation therapy system that includes a radiation source that moves about a path and directs a beam of radiation towards an object and a cone-beam computer tomography system. The cone-beam computer tomography system includes an x-ray source that emits an x-ray beam in a cone-beam form towards an object to be imaged and an amorphous silicon flat-panel imager receiving x-rays after they pass through the object, the imager providing an image of the object. A computer is connected to the radiation source and the cone beam computerized tomography system, wherein the computer receives the image of the object and based on the image sends a signal to the radiation source that controls the path of the radiation source.