153 results about "Antenna effect" patented technology

A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.

A new method to route a metal line in the layout of an integrated circuit device is achieved. The method comprises providing a layout for an integrated circuit device comprising an array of placed standard cells. Contact/via layer polygons are placed for coupling the standard cells. A line is routed in a metal layer. An antenna effect value is calculated for the line using parameters previously determined from the layout of each the standard cell. The parameters comprise gate area, diode area, metal area, and contact/via area coupled to the line. The gate area, the diode area, the metal area, and the contact/via area are segregated by metal level. The steps of routing and calculating are repeated if the antenna effect value exceeds a specified value. A method to extract parameters is disclosed.

A printed circuit board and an electronic product are disclosed. In accordance with an embodiment of the present invention, the printed circuit board includes a first board, which has an electronic component mounted thereon, and a second board, which is positioned on an upper side of the first board and covers at least a portion of an upper surface of the first board and in which an EBG structure is inserted into the second board such that a noise radiating upwards from the first board is shielded. Thus, the printed circuit board can readily absorb various frequencies, be easily applied without any antenna effect and be cost-effective in manufacturing.

A chip pad structure of an integrated circuit (IC) and the method of forming are disclosed. The chip pad comprises a main pad portion and a ring pad portion. During a charging process involved in forming the chip pad structure, electrical connections from the gate electrodes of MOS transistors in the IC substrate generally are made only to the ring pad portion that has an antenna-to-gate area ratio substantially below a predetermined antenna design rule ratio, and thus is resistant or immune to antenna effect. The main pad portion and the ring pad portion are coupled together through metal bridges formed in an upper interconnect metal layer or in the top conductive pad layer. The chip pad may be used as probe pads on a parametric testline or bonding pads on an IC.

The invention discloses an electronic component packaging structure and an electronic device. The electronic component packaging structure at least comprises a substrate, a conductive housing and a non-conductive adhesive, wherein the substrate is provided with a set adhesion area, the set adhesion area is used for adhesion of an electronic component, the conductive housing is provided with a top and a side wall extending towards the substrate, a bonding end is arranged on the side, close to the substrate, of the side wall, the conductive housing is bonded to the substrate through the bonding end and the non-conductive adhesive, the adhesion area is surrounded by the conductive housing which is bonded to the substrate, a shielding space is formed above the adhesion area, the non-conductive adhesive is located between the substrate and the bonding end, the dielectric constant of the non-conductive adhesive is larger than or equal to seven, and the coating thickness of the non-conductive adhesive is smaller than or equal to 0.07 mm. By the adoption of the electronic component packaging structure and the electronic device, the planar capacitance density of a planar capacitance structure formed by the conductive housing, the non-conductive adhesive and the substrate is improved, then the planar capacitance value of the planar capacitance structure formed by the conductive housing, the non-conductive adhesive and the substrate can be increased, gap antenna effect radiation EMI at the position of the non-conductive adhesive can be effectively reduced, and the EMI shielding effect of the shielding space is improved.

A broadband antenna for a wireless communication device includes a grounding unit for grounding; a first radiating element; a second radiating element electrically connected to the grounding unit; a signal feed-in element for transmitting a radio signal to the first radiating element in order to emit the radio signal via the first radiating element; and a passive component comprising an inductor, where the passive component is electrically connected between the first and the second radiating elements to work in conjunction with the first radiating element, the second radiating element and the grounding unit to form a loop antenna effect.

A method for fabricating a non-volatile memory is provided. A stacked structure including a tunneling layer, a trapping layer, a barrier layer, and a control gate is formed on a substrate. A source region and a drain region are formed beside the stacked structure in the substrate. A silicon oxide spacer is formed on the sidewalls of the stacked structure. An ultraviolet-resistant lining layer is formed on the surfaces of the substrate and the stacked structure to prevent the ultraviolet light from penetrating into the trapping layer. A dielectric layer is formed on the ultraviolet-resistant lining layer. A contact being electrically connected to the control gate is formed in the dielectric layer. A conducting line electrically connected to the contact is formed on the dielectric layer. A lost-surface-charge lining layer is formed on the surfaces of the dielectric layer and the conducting line to reduce the antenna effect.

The invention provides an antenna combination structure for a radio product, which relates to compact antenna structure technology for a portable radio product. The antenna combination structure comprises a circuit board, a button switch arranged on the circuit board, and an antenna, wherein the antenna is connected with a circuit signal end on the circuit board, and is divided into three sections, namely L1, L2 and L3, from the joint of the circuit signal end and the antenna to the tail end of the antenna in sequence; the L1 is a connecting section for connecting the circuit signal end on the circuit board and the L2; the sum of the L1, the L2 and the L3, namely the total length of the antenna is between 0.2 and 0.3 lambda; the sum of the L2 and the L3 is 0.16 lambda; the length of the L2 of the antenna is equal to that of the L3; and the L1, the L2 and the L3 are bounded at the edge of the circuit board and are arranged on the periphery of the button switch. The antenna combination structure has the advantages that space of the circuit board and space of the button on the circuit board are sufficiently utilized so as to achieve the aim of space conservation, excellent antenna effect and antenna micromation.

A semiconductor device including an SOI substrate reduces a gate leak current of an anti-antenna-effect dummy fill-cell and suppresses an antenna effect. The thickness of a gate insulating film of the anti-antenna-effect dummy fill-cell is determined to be large than that of a gate insulating film of an SOI transistor. This reduces the gate leak current of the anti-antenna-effect dummy fill-cell. The gate area (gate length×gate width) of the anti-antenna-effect dummy fill-cell is determined to be large than that (gate length×gate width) of the SOI transistor. This makes the gate capacity of the anti-antenna-effect dummy fill-cell almost equal to that of SOI transistor, thereby suppressing the antenna effect.

Semiconductor integrated circuit device wherein action for averting antenna effect has been taken, and method for producing a semiconductor integrated circuit device in which action for averting the antenna effect can be taken with ease. The method for producing a semiconductor integrated circuit device includes forming step of forming a semiconductor region of first conductivity type, a first diffusion region of the first conductivity type, formed in the semiconductor region of the first conductivity type, a gate insulating film formed in the semiconductor region of the first conductivity type, gate electrode on the gate insulating film and a wiring layer electrically connected to the gate electrode. The method also includes an investigating step of investigating, following the forming step, into whether or not it is necessary to take an action for averting an antenna effect in the wiring layer. The method also includes an action-taking step of replacing the first diffusion region of the first conductivity type by a second diffusion region of a second conductivity type, in case it is verified in the investigating step that it is necessary to take an action against the antenna effect. The second diffusion region of the second conductivity type forms a pn junction with the semiconductor region of the first conductivity type. The action-taking step also electrically connects the second region of the second conductivity type to the wiring layer.

The invention discloses a method for generating files containing the antenna effect information, which is characterized in that: at first, a GDSII file is generated from a layout; then the GDSII file is operated by a layout verification tool to generate files containing the information of connecting lines; at last, the information of the connecting lines in the files which contain the information of the connecting lines is written into a CLF file. By using the layout verification tool and script language, the method provided by the invention can directly extract the CLF file with a simple process of realization, thus greatly saving time of editing engineers of integrated circuit layouts and saving cost on the design of the integrated circuit layouts; the method can also generate needed CLF files rapidly with respect to varied locating and wiring tools, thus providing great convenience for entering varied locating and wiring tools needed by the same IP; for integrated circuit layouts of varied projects, an operation file and a script program file complied last time can be adopted, thus reducing time of editing engineers of integrated circuit layouts to the minimal during the process of generation of the CLF files.

The invention relates to a joint probe and a corresponding seismic module used for measuring static and dynamic properties of soil. The joint probe comprises a dilatometer probe, a gas duct, a conducting wire and the seismic module, wherein the gas duct is connected with the dilatometer probe and is used for providing a gas connection between the dilatometer probe and an external gas source; the conducting wire is positioned in the gas duct and is used for providing an electric connection between the dilatometer and an external circuit; and the seismic module is connected to a conducting wire which is positioned in the gas duct and is used for providing an electric connection between the seismic module the external circuit. The joint probe solves the problems of a plurality of conducting wires and an antenna effect.

The invention relates to a method and a circuit for solving the problem of antenna effect in a chip design. In some chip designs, an active shield physical protection design needs to be adopted for the purpose of preventing invasive attack to smart card chips. An active shielding layer has a defending effect on both attacks needing physical modification and those damaging partial functions of the chips. An active shielding line adopts a top layer metal and has a relatively long routing, and thus can cause severe antenna effect. When the traditional method of adding a diode is adopted, a relatively large chip area are usually occupied. The method provided by the method adopts a circuit with a transmission gate structure to solve the problem of antenna effect, and the circuit is simple in structure and easy to implement, and by using the method and the circuit, functions of the circuit are not affected.

The invention provides an intelligent wearable product antenna taking a metal wearable product connector as a main radiating body. The intelligent wearable product antenna comprises an outer shell, a FPC antenna, a metal screw and a watch buckle, wherein a main board is arranged inside the outer shell, and the main board is provided with a ground point and a feed point; the FPC antenna is assembled in the outer shell, and is connected with the feed point and services as a fine tuning part of the entire intelligent wearable product antenna; and the metal screw is connected with the FPC antenna; the watch buckle is arranged on the side edge of the outer shell, the watch buckle is provided with a metal connecting body, the metal screw is fixed in the metal connecting body, and the metal connecting body and the FPC antenna form a complete set of antenna to be connected with the main board. Therefore, the metal connecting body serves as an external antenna, increases efficiency as well as transmitting and receiving effects of the antenna, and reduces constrains and influence of the main board and environment on antenna effects.

An IC including first and second FDSOI UTBOX cells arranged in a row, the first having an nMOS transistor arranged plumb with and above a ground plane and an N-type well, and a pMOS transistor arranged plumb with and above a ground plane and a P-type well, the N-type well and the P-type well being arranged on either side of a row axis, wherein the second includes a diode protecting against antenna effects or a well tap cell, the second cell comprising a P-type well arranged in the alignment of the P-type well of the pMOS transistor and comprising an N-type well arranged in the alignment of the N-type well of the nMOS transistor, the second cell comprising a metal connection coupled to its P-type well and coupled to a higher-level metal connection element arranged plumb with the N-type well, the metal connection extending on either side of the axis.

The invention discloses a plasma induced damage (PID) detection structure and a manufacture method thereof. The PID structure comprises a semiconductor substrate, a first coverage, a second coverage, a third coverage and a top coverage, wherein the first coverage is arranged in a first medium layer and comprises a semiconductor device and a protection diode formed on the semiconductor substrate; the second coverage is arranged in a second medium layer and comprises a first wire and a second wire, wherein the first wire is electrically connected with the semiconductor device, and the second wire is electrically connected with the protection diode; the third coverage is arranged in a third medium layer and comprises an antenna structure and a bottom welding pad, wherein the antenna structure is electrically connected with the first wire, and the bottom welding pad is electrically connected with the second wire; the top coverage is arranged in a top medium layer and comprises a top metalline and a top welding pad, wherein the top metal line is electrically connected with the first wire and the second wire; and the top welding pad is electrically connected with the bottom welding pad. According to the PID detection structure and the manufacture method thereof, the strength of antenna effect can be accurately detected.

The method of manufacturing a microstructure having metal microbodies which generate an enhanced electric field includes forming, in a substrate, micropores each of which opens out on a surface of the substrate, has an inside diameter that varies in a depth direction, and has in a tip portion thereof a narrower, outwardly projecting recess, filling the micropores with metal to form the metal microbodies each having at a tip portion thereof a projection made of the metal filled into the outwardly projecting recess, and removing at least part of the substrate from a metal microbody tip portion side to expose at least the projection at the tip portion of each of the metal microbodies. The resulting microstructure has metallic nanostructural elements that generate an enhanced electric field by an antenna effect at their pointed tips.

The invention discloses a wiring method of a sensor of a touch screen and the sensor of the touch screen. The touch screen comprises a display area. The wiring method comprises the following steps of taking a ground wire of the sensor, which is arranged below the display area, as a first ground wire and disconnecting the first ground wire. The ground wire of the sensor, which is arranged below the display area, is disconnected, so that the electrostatic discharge can be prevented while the antenna effect caused by the close loop due to the ground wire of the sensor is prevented, the interference on the antenna of the equipment is reduced and the radiation power of the antenna of the equipment is promoted.

A high-sensitivity testing structure for evaluating the antenna effect of plasma is composed of a substrate, and ONO dielectric layer which consists of a lower oxide layer, a silicon nitride layer and an upper oxide layer, an electrode, and an antenna structure connected with said electrode for collecting the charges induced by plasma.

The invention discloses an examination method for different-party IP (internet protocol) containing client party chip antenna effect. The method includes following steps: step one, identifying all input and output interfaces in an IP module layout; step two, selecting the input and output interface used for generating final data; step three, taking the input and output interface as a starting point to extract out all lines related to the antenna effect along the lines connecting every interface from top to bottom; step four, enabling the extracted lines to generate a GDSII formatted file capable of being read by a user layout tool and providing the file for a client; and step five, synthesizing the GDSII formatted file into a main chip by the client for physical layout verification of the final data. By the method, data which can be directly used for antenna design rule examination by a client party can be generated, and a design company can perform antenna effect examination close to an entity through tools before the data are given out, so that repeat data modification caused by violation of design rules by the client can be avoided.

The invention provides an integrated circuit, a chip bonding pad structure and a manufacture method. The chip bonding pad comprises a main bonding pad and a ring bonding pad. In a process of fabricating charges comprising formation of the chip bonding pad, a grid of a metal oxide semiconductor transistor in a substrate of the integrated circuit is electrically connected with the ring bonding pad,therefore area ratio from an antenna to the grid is less than a proportion of a given antenna, thus effectively reducing or avoiding antenna effect. The main bonding pad is electrically coupled with the ring bonding pad through a metal bridge formed in an upper inside cable metal layer or an uppermost conductive bonding pad layer. The chip bonding pad provided by the invention is a probe bonding pad on a parameter testing line or a bonding pad on the integrated circuit.