124 results about "Plasma antenna" patented technology

A plasma device serves as an antenna, single or stacked plasma frequency selective surfaces, single or stacked plasma antenna arrays, plasma lamps, plasma limiters, plasma switch, plasma windows or plasma phase shifters. An electromagnetic wave signal is controlled to have a plasma frequency matched as nearly as possible to the frequency of incident electromagnetic signals for maximizing the antenna aperture and efficiency. Matching the frequencies permits the plasma device to have a physical size and shape substantially independent of the conventional optimal size and shape for a given transceived signal frequency. The plasma device plasma frequency is adjustable for tuning to different incident signal frequencies, thereby providing flexibility not available from conventional metal antennas.

A resonant frequency device provided with a transmitter, an amplifier and an impedance matching circuit connected to an antenna, such as a plasma antenna. A voltage or current balun could be provided between the impedance matching circuit and the antenna.

The invention relates to a preparation method for a SiGe-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; forming a second protection layer on the surface of the SiGeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the SiGeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the SiGeOI substrate by adopting ion implantation; and forming leads on the SiGeOI substrate to complete the preparation of the SiGe-based heterogeneous SPiN diode. By adoption of the embodiment, the high-performance SiGe-based heterogeneous SPiN diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

A reconfigurable antenna comprises an array of interconnected gas enclosures, each of the enclosures being controllable between at least a first state in which gas within the enclosure is substantially non-conducting and a second state in which the gas within the enclosure forms an electrically conductive plasma. At least one pair of adjacent enclosures in the array is arranged such that configuring the pair of enclosures in the second state results in an electrical connection, between a first electrode associated with one of the enclosures of the pair and a second electrode associated with the other enclosure of the pair, through electrically conductive plasma of at least one of the enclosures of the pair. The reconfigurable antenna in an illustrative embodiment is operable in a plurality of different modes of operation by altering, from mode to mode, which of the enclosures are configured in the first state and which of the enclosures are configured in the second state.

The invention relates to a plasma antenna array which is constituted by leading a plurality of plasma antenna units to work simultaneously, and the pointing direction of a radiation pattern of the plasma antenna array can carry out omni-directional scanning on the plane on which the plasma antenna units are distributed. Signal feed loops on all the plasma antenna units can feed communication signals with same phase and amplitude onto plasma antennas. The higher exciting power is imposed on the plasma antenna unit in the direction which needs to produce stronger radiation so as to produce plasma with higher density and higher electrical conductivity. A radiation signal of the plasma antenna unit with the higher electrical conductivity is stronger than other antenna units, and then the plasma antenna array can produce the stronger radiation in the desired direction, thereby carrying out the omni-directional scanning on the pattern of the antenna array. The plasma antenna array is characterized in that the plurality of the plasma antennas are arranged into the array and work simultaneously, and the antenna array not only has high gain and directivity, but also has better pattern reconfigurability.

The invention relates to a space-borne plasma antenna generation and emission device and a communication method. The device comprises a discharge tube, solenoid coils, an antenna, an air chamber, a radio frequency (RF) power source, a VLF/ELF wave feed source and a matching network. Space-borne plasma antenna submarine communication is used, and super-long plasma jet flows are jetted from a low-orbit satellite to be used as the VLF/ELF transmitting antenna, so that the device has high elusiveness, flexibility and maneuverability, weaknesses of foundation/shore-based submarine communication are prevented, and communication requirements of strategic nuclear submarines are fully met.

The invention provides a plasma flexible antenna system comprising a radio frequency surface wave plasma excitation system, an antenna body, a feed system and a control component. The radio frequency surface wave plasma excitation system excites the antenna body by adopting an inductive coupling excitation mode. An excitation power supply outputs adjustable excitation signals to generate and maintain surface wave plasma. The shape of the antenna body can be adjusted so as to change the feature parameters of the antenna and realize rapid reconstruction. The feed system feeds communication signals in the flexible antenna by adopting a capacitive coupling signal feed mode. A control system can adjust the shape of the flexible antenna. The strength of the antenna system can be enhanced and flexibility of the antenna body can be increased so that the problem that the conventional plasma antenna is fragile can be solved and damage of the antenna can be prevented. Besides, the features of antenna impedance, directivity, polarization, bandwidth and gain can be realized by changing the shape of the antenna and the gas discharge state so as to extend the reconstructable range of the plasma antenna.

The invention discloses an all solid-state plasma near coupling cloaking antenna array and a control method thereof. The all solid-state plasma near coupling cloaking antenna array comprises solid-state plasma antenna units, an upper layer dielectric substrate, a micro-strip coupling feeder line, a bottom layer dielectric substrate and a grounding metal plate. The solid-state plasma antenna units comprise semiconductor plasma units, plasma unit control chips, line control wires and queue control wires. All the plasma units are controlled independently through a peripheral control circuit, the plasma antenna units of different shapes are formed, and reconstruction of an antenna structure is achieved. The antenna structure is compact and simple, the cost is low, the antenna structure can work in a 1 GHz-100GHz wave band, the limitation that a traditional gas plasma antenna can not work in a high frequency band easily is broken through, and the advantages of being capable of achieving beam scanning, good in cloaking performance and the like are achieved.

The invention discloses a parameter-variable precision plasma antenna radiation performance simulation method and aims to realize detailed analysis on relation between plasma antenna radiation performance and plasma physical property to improve simulation precision. The method includes: firstly, determining a physical model of an antenna and incident electromagnetic wave frequency of the antenna according to a system and an operating frequency of the antenna, substituting into a Drude dispersion equation, and taking the fact that electrical conductivity can be represented by plasma relative dielectric constant values as limits to obtain plasma frequency omega pe and plasma collision frequency v by calculation; adopting CST software for setting up an antenna model which is a dispersion model, setting parameters of the dispersion model according to the plasma frequency omega pe and the plasma collision frequency v, and starting simulation to obtain an antenna radiation performance result; finally checking the antenna radiation performance result to judge whether the result meets requirements or not, and if not, re-determining a group of parameters and repeating the steps.

A microwave antenna includes a first spiral conduit having a first conduit end, first plural ports in a floor of the first spiral conduit spaced apart along the length of the first spiral conduit; an axial conduit coupled to a rotatable stage; and a distributor waveguide comprising an input coupled to the axial conduit and a first output coupled to the first conduit end.

An electromagnetic impulse transmission system includes a plasma antenna generator, an electromagnetic impulse generator electrically coupled with the plasma antenna generator, and a ground plane structure operably associated with the plasma antenna generator. An electromagnetic impulse transmission system includes a plasma antenna, an electromagnetic impulse generator electrically coupled with the plasma antenna, and a ground plane operably associated with the plasma antenna. A method includes the steps of providing a plasma antenna generator, an electromagnetic impulse generator, and a ground plane structure; generating a plasma antenna with the plasma antenna generator; and transmitting an electromagnetic impulse from the electromagnetic impulse generator to the plasma antenna. The method further includes radiating the electromagnetic impulse from the plasma antenna such that at least a portion of the electromagnetic impulse is reflected by the ground plane structure.

The invention relates to a preparation method for a GaAs/Ge/GaAs heterostructure SPiN diode string used for a sleeve antenna. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; (c), depositing a GaAs material in the first trench and the second trench; (d), performing P type ion implantation on the GaAs material in the first trench by adopting an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and (e), forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs/Ge/GaAs heterostructure SPiN diode. According to the embodiments, the high-performance Ge-based SPiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The invention discloses a metal antenna structure for improving the slow axis far field of a surface emission semiconductor laser unit. The metal antenna structure comprises a substrate, a grating layer, an electrical isolation layer, double-channel filler, a lower ohmic contact layer and a sub-wavelength metal plasma antenna, wherein the substrate is provided with a double-channel ridge-shaped waveguide structure, and a laser unit active region is arranged inside a ridge-shaped region; the grating layer is arranged on the upper surface of the substrate; the electrical isolation layer is arranged on the upper surface of the grating layer, and an electric injection window is formed by breaking the position, corresponding to the ridge-shaped region, on the upper surface of the grating layer; double channels are filled with the double-channel filler; the lower ohmic contact layer is arranged on the lower surface of the substrate; the sub-wavelength metal plasma antenna is arranged on the upper surface of the electrical isolation layer and the upper surface of the double-channel filler, and an electric injection ohmic contact region and a light output window are formed at the same time in the mode that the position, corresponding to the ridge-shaped region, of the sub-wavelength metal plasma antenna is broken. The metal antenna structure effectively reduces the far field divergence angle in the slow axis direction of the surface emission laser unit, and realizes manufacturing of a small-divergence-angle quasi-circular spot or even circular spot surface emission device.

A high-sensitivity testing structure for evaluating the antenna effect of plasma is composed of a substrate, and ONO dielectric layer which consists of a lower oxide layer, a silicon nitride layer and an upper oxide layer, an electrode, and an antenna structure connected with said electrode for collecting the charges induced by plasma.

The present invention discloses a microwave plasma chemical vapor deposition apparatus using a plasma antenna as a coupling antenna. The present invention also discloses a method for synthesizing diamond, which uses the plasma antenna as the coupling antenna to synthesize diamond by microwave plasma chemical vapor deposition. The application also discloses the application of a microwave plasma chemical vapor deposition apparatus in the synthesis of single crystal diamond. The microwave plasma chemical vapor deposition apparatus of the present invention is coupled by a plasma antenna, which cangreatly improve the efficiency of the antenna.

The invention provides a plasma processing apparatus which is provided with a metal window using a lightweight mechanism and maintains the mechanical strength. In the plasma processing apparatus (1) which performs plasma processing on a processed substrate (G) in a processing space (100) where vacuum exhaust is carried out, a metal process container (10) has a mounting table of the processed substrate (G). The conductive metal window (3) spacing an insulation part (31) is arranged at the position of an opening which is sealed and formed on the upper surface. The metal window (3) is configured to be hung and supported by a top plate part (61) above a plasma antenna (5) for generating the plasma. And the top plate part (61) is hung and supported by a top plate supporting mechanism (7) of a skeleton structure with a crossarm part (71, 711) and a foot column part (72).

The invention provides an electromagnetic wave propagation characteristic test device in low temperature plasma. The device comprises a plasma generation chamber, an annular high-voltage electrode and an annular ground electrode, wherein the annular high-voltage electrode and the annular ground electrode are arranged in the plasma generation chamber. The annular high-voltage electrode and the annular ground electrode are in insulation connection. The annular ground electrode is fixedly connected with the inner wall of the plasma generation chamber. The device uses the technology that electric potential difference is prevented inside plasma generated by glow discharge at low air pressure is used; the stable period of the generated plasma is prolonged, which is favorable for studying the propagation characteristic of electromagnetic waves of various frequency bands in the plasma; a good experiment environment is provided for studying absorption and scattering of incident electromagnetic waves of the plasma, tracking and identification technologies of a space exploration spacecraft which comes into atmosphere again, a plasma stealth technology, a plasma de-noising technology, a plasma antenna technology and the like; and the device has high scientific experimental application value and market prospect.

The invention discloses a laser plasma antenna device, which comprises a convex lens, a receiver and an oscilloscope, wherein the convex lens and the oscilloscope are positioned on the two sides of the receiver respectively; laser is focused by the convex lens to form a section of plasma channel on which a radio signal is loaded; the receiver receives the radio signal on the plasma channel; and the radio signal on the plasma channel is reflected on the oscilloscope. According to the laser plasma antenna device, the plasma channel is generated in air, the radio signal is loaded on the plasma channel, and the transmitted radio signal is received by the receiver.

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl₂ gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu_xCl_y). The precursor (Cu_xCl_y) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

The invention relates to an SPiN diode reconstructible plasma sleeve dipole antenna. The antenna comprises a semiconductor substrate 1, an SPiN diode antenna arm 2, a first SPiN diode sleeve and a second SPiN diode sleeve 3, 4, a coaxial feed line 5 and DC bias lines 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, wherein the SPiN diode antenna arm 2 comprises SPiN diode strings w1, w2, w3 which are connected in series. The first SPiN diode sleeve3 and the second SPiN diode sleeve 4 respectively comprise SPiN diode strings w4, w5, w6 and SPiN diode strings w7, w8, w9 which are respectively connected in series. Each SPiN diode string is connected with a DC bias through a corresponding DC bias line. The lengths of a plasma antenna arm formed in SPiN diode conduction and the sleeves are controlled through the metal DC bias lines, thereby realizing reconstructible antenna working frequency. The antenna according to the invention has advantages of easy integration, effective invisibility and quick frequency jump.