Microwave plasma chemical vapor deposition device and method for synthesizing diamond

A technology of chemical vapor deposition and microwave plasma, applied in chemical instruments and methods, from chemically reactive gases, gaseous chemical plating, etc., can solve the problems of low efficiency of metal antennas and achieve the effect of improving efficiency

Inactive Publication Date: 2018-09-28
FD3M公司
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, in the antenna coupling mode, a metal antenna is usua

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave plasma chemical vapor deposition device and method for synthesizing diamond
  • Microwave plasma chemical vapor deposition device and method for synthesizing diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention discloses a microwave plasma chemical vapor deposition apparatus using a plasma antenna as a coupling antenna. The present invention also discloses a method for synthesizing diamond, which uses the plasma antenna as the coupling antenna to synthesize diamond by microwave plasma chemical vapor deposition. The application also discloses the application of a microwave plasma chemical vapor deposition apparatus in the synthesis of single crystal diamond. The microwave plasma chemical vapor deposition apparatus of the present invention is coupled by a plasma antenna, which cangreatly improve the efficiency of the antenna.

Description

technical field [0001] The present application relates to the technical field of single crystal diamond synthesis, in particular to a microwave plasma chemical vapor deposition device and a diamond synthesis method. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD) transmits the microwave generated by the microwave generator to the reactor with a waveguide, and feeds CH into the reactor 4 with H 2 The mixed gas, high-intensity microwave energy excites and decomposes the carbon-containing gas above the substrate to form active carbon-containing groups and atomic hydrogen, and forms a plasma, thereby depositing a diamond film on the substrate. [0003] The difference between different types of MPCVD devices lies in the different forms of plasma reaction chambers. From the form of vacuum deposition chamber, there are quartz tube type, quartz bell jar type and metal cavity type with microwave window. From the coupling mode of microwave and plasm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B25/02C30B29/04C23C16/27C23C16/517C23C16/511C23C16/513
CPCC23C16/274C23C16/276C30B25/02C30B29/04
Inventor 马懿马修·L·斯卡林朱金华吴建新缪勇卢荻艾永干克里斯托弗·E·格里芬
Owner FD3M公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products