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704 results about "Plasma reaction" patented technology
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Allergic Reactions. Allergic reactions to plasma proteins can range from complaints of hives and itching to anaphylaxis. Such reactions may occur in up to 1 in 200 transfusions of RBCs and 1 in 30 transfusions of platelets.
Method for forming silazane-based dielectric film
A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.
Owner:ASM JAPAN
Replaceable upper chamber parts of plasma processing apparatus
ActiveUS20110056626A1Minimizing transferElectric discharge tubesSemiconductor/solid-state device manufacturingEngineeringPlasma reaction
An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.
Owner:LAM RES CORP
Method for filling recesses using pre-treatment with hydrocarbon-containing gas
ActiveUS9117657B2Improve flatnessHighly effectiveSemiconductor/solid-state device manufacturingChemical vapor deposition coatingPre treatmentPre deposition
A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.
Owner:ASM IP HLDG BV
Method for depositing flowable material using alkoxysilane or aminosilane precursor
ActiveUS7825040B1Reducing film shrinkageReduce carbon contentSolid-state devicesSemiconductor/solid-state device manufacturingSilanesPlasma reaction
A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.
Owner:ASM JAPAN
Method for forming silazane-based dielectric film
A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.
Owner:ASM JAPAN
Method for forming dielectric film using siloxane-silazane mixture
ActiveUS8003174B2High densityHigh strengthPretreated surfacesSemiconductor/solid-state device manufacturingSilazaneMetallurgy
Owner:ASM JAPAN
Method for forming inorganic silazane-based dielectric film
ActiveUS7781352B2Reduction factorSemiconductor/solid-state device manufacturingChemical vapor deposition coatingDielectricSilazane
A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.
Owner:ASM JAPAN
Method For Filling Recesses Using Pre-Treatment With Hydrocarbon-Containing Gas
ActiveUS20140363983A1Improve flatnessHighly effectiveSemiconductor/solid-state device manufacturingChemical vapor deposition coatingPre treatmentPlasma reaction
A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.
Owner:ASM IP HLDG BV
Method for forming insulation film
InactiveUS7354873B2Reduce distanceGood film densitySolid-state devicesSemiconductor/solid-state device manufacturingPlasma reactionResidence time
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
Owner:ASM JAPAN
Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
InactiveUS20080216958A1Wave amplification devicesElectric discharge tubesPlasma reactionAnalytical chemistry
Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.
Owner:NOVELLUS SYSTEMS
Method for forming insulation film
InactiveUS7582575B2Reduce trafficReduce volumeSolid-state devicesSemiconductor/solid-state device manufacturingPlasma reactionResidence time
A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
Owner:ASM JAPAN
Method for forming insulation film
InactiveUS20070004204A1Reduce trafficDecrease in flow volumeSolid-state devicesSemiconductor/solid-state device manufacturingProduct gasPlasma reaction
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
Owner:ASM JAPAN
Method for forming dielectric film using siloxane-silazane mixture
ActiveUS20090156017A1High densityHigh strengthPretreated surfacesSemiconductor/solid-state device manufacturingSilazaneMetallurgy
A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
Owner:ASM JAPAN
Electromagnetic systems with double-resonant spiral coil components
InactiveUS7973296B2Easy to operateHigh outputNuclear energy generationSemiconductor/solid-state device manufacturingCapacitanceElectrical conductor
Spiral coils generate very powerful electromagnetic fields by operating with two different but simultaneous resonant behaviors. Quarter-wave resonance is established by adjusting the frequency (and wavelength) of a radiofrequency (RF) voltage source until the length of the spiral conductor is equal to ¼ of the wavelength of the alternating voltage. This generates an electromagnetic standing wave with at least one peak node and at least one null node. Inductive-capacitive (L / C) resonance is established by optimizing the thickness and width of the wire ribbon used to make the spiral coil. When inductance and capacitance are balanced, the current response will synchronize with the voltage input, creating in-phase behavior, minimal total impedance, and maximal power output. If two such coils are placed near each other, they will create an extremely powerful electromagnetic field between them, which can promote chemical and plasma reactions involving charged particles such as ions or plasma particles, possibly including nuclear fusion reactions.
Owner:TETRAHEED
Electrode for plasma processes and method for manufacture and use thereof
InactiveUS20020127853A1Less heat-upReduce accumulationElectric discharge tubesSemiconductor/solid-state device manufacturingTemperature controlSilicon electrode
A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
Owner:LAM RES CORP
Method for forming low-dielectric constant film on semiconductor substrate by plasma reaction using high-RF power
InactiveUS6740602B1Liquid surface applicatorsSemiconductor/solid-state device detailsHardnessPlasma reaction
A method for forming a film having a low dielectric constant and high mechanical hardness on a semiconductor substrate by plasma reaction includes the steps of: (i) introducing a silicon-containing hydrocarbon gas as a source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and (ii) applying radio-frequency (RF) power of 1,000 W or higher to the reaction space while maintaining a pressure of the reaction space at 100 Pa or higher to activate plasma polymerization reaction in the reaction space, thereby forming a thin film on the semiconductor substrate.
Owner:ASM JAPAN
Self-cleaning method for plasma CVD apparatus
InactiveUS20050242061A1Improve cleaning rateReduce cleaning frequencyElectric discharge tubesDecorative surface effectsCleaning methodsPlasma reaction
A self-cleaning method for a plasma CVD apparatus includes: (a) after unloading an object processed in a reaction chamber, heating a showerhead to a temperature of 200° C. to 400° C.; (b) introducing a cleaning gas into the reaction chamber; and (c) cleaning the reaction chamber by plasma reaction using the cleaning gas.
Owner:FUKUDA HIDEAKI
Method and apparatus for producing colloidal nanoparticles in a dense medium plasma
InactiveUS7128816B2Easy to convertEasily interchangeablePowder deliveryPhotography auxillary processesConductive materialsColloidal nanoparticles
A method and apparatus is utilized for producing colloidal dispersions of nanoparticles of electrically conducting materials. The colloidal dispersions are produced in a dense media plasma reactor comprising at least one static electrode and at least one rotating electrode. The plasma reaction sputters off minute particles of the electrically conducting material from which the electrodes are made. Methods of using the colloidal dispersions thus made are also described. Colloidal dispersions of silver produced in this manner are highly effective for bactericidal purposes.
Owner:WISCONSIN ALUMNI RES FOUND
RF antenna assembly for treatment of inner surfaces of tubes with inductively coupled plasma
InactiveUS7967945B2High wear-resistant and corrosion-resistant propertyHigh-speed rate of depositionElectric discharge tubesSemiconductor/solid-state device manufacturingLinear motionInductively coupled plasma
An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils.
Owner:GLUKHOY YURI +2
Method for treating waste incineration fly ash by using plasmas
InactiveCN101797572APromote vitrificationSolve the "bridge" problemSolid waste disposalMelting tankVitrification
Owner:安徽中科华炬环保科技有限公司
Coaxial plasma arc vapor deposition apparatus and method
An apparatus for deposition of plasma reaction films includes a substrate for the deposition of either thin or thick films. The substrate also allows for a film deposition which adheres to the substrate, and also films which may be removed after deposition. The cathode may be fabricated from individual wires, or it may be fabricated from a single conductor. A macro-particle filter which preferentially traps larger particles may be introduced between a porous cathode and the deposition surface. The macro-particle filter may also carry electrical current as is useful for generating a magnetic field such that a Lorentz force acts preferentially on ionized particles, allowing them to pass through the filter while trapping macroparticles that are not influenced by the magnetic field.
Owner:KRISHNAN MAHADEVAN
Tubular high-density plasma reactor
ActiveUS20110284437A1Significant immunityWater contaminantsLoose filtering material filtersHigh densityPlasma reaction
An apparatus and method for simultaneously removing materials from fluids without the need for added chemicals, and without the formation of toxic byproducts, by high-density plasma reaction chemistry is described. Applications to removal of contaminants, such as pesticides, organics, PPCPs, and pathogens, as examples, from water are discussed. Changes in the quality of the raw water are not expected to adversely affect the decontamination process.
Owner:SYMBIOS TECH
Manufacturing method of semiconductor device
ActiveUS20080311718A1Improve operating rateReduce contact resistanceTransistorSolid-state devicesTitanium nitrideNickel silicide
The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl4 gas, forming a plasma reaction Ti film by a plasma reaction using a TiCl4 gas, carrying out plasma treatment with an H2 gas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NH3 gas and plasma treatment with an NH3 gas.
Owner:RENESAS ELECTRONICS CORP
Etching method and computer storage medium storing program for controlling same
ActiveUS20050070111A1Increasing pattern widthPattern width decreasedSemiconductor/solid-state device manufacturingPhotomechanical exposure apparatusPlasma reactionPhotolithography
An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.
Owner:TOKYO ELECTRON LTD
Plasma processing apparatus, plasma processing method and photoelectric conversion element
InactiveUS20090183771A1Lowering application valueReduce processing speedElectric discharge tubesFinal product manufactureEngineeringPhotoelectric conversion
In the case of performing at least two plasma processing steps in a common plasma reaction chamber, a CW AC power or a pulse-modulated AC power is appropriately selected as a power for plasma processing in each step. Thereby, even in a step where plasma processing conditions are limited due to apparatus configurations, the plasma processing can be performed in more various manners. Further, uniform plasma can be generated between electrodes and a quantity of a power to be supplied between the electrodes can be reduced, by using the pulse-modulated AC power. Thereby, a plasma processing speed can be reduced so that throughput control is facilitated.
Owner:SHARP KK
Plasma reaction apparatus and plasma reaction
InactiveUS6130118AGood step coverageIncreased film deposition rateElectric discharge tubesSemiconductor/solid-state device manufacturingHigh frequency powerHigh rate
A process for depositing a film at a high rate and with superior step coverage properties, which comprises installing a pair of electrodes crossing with another pair of electrodes making a right angle with respect to the another pair, and applying a high frequency power differing in phase to the electrodes in order to apply a high frequency power having a Lissajous' waveform in the reaction space during the deposition of a film on a substrate.
Owner:SEMICON ENERGY LAB CO LTD
Methods for producing thin films on substrates by plasma CVD
InactiveUS7303789B2Quality improvementDeterioration of film qualityLiquid surface applicatorsChemical vapor deposition coatingOptoelectronicsPulse voltage
Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.
Owner:NGK INSULATORS LTD
Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
InactiveUS20060108069A1Electric discharge tubesSemiconductor/solid-state device manufacturingSilicon electrodeEngineering
A plasma processing system for etching a semiconductor wafer comprises: 1) a plasma chamber in which the semiconductor wafer may be mounted; 2) an upper ring capable of being mounted on an upper opening of the plasma chamber, wherein a central portion of the upper ring forms a hole; and 3) an electrode plate having a plurality of vias therethrough. The electrode plate is disposed in the hole in the upper ring, wherein the central portion of the upper ring further forms a shelf for supporting the electrode plate in the hole.
Owner:SAMSUNG AUSTIN SEMICON +1
Plasma etching device
InactiveUS20110042009A1Plasma uniformity can be improvedImprove uniformityElectric discharge tubesSemiconductor/solid-state device manufacturingEngineeringPlasma reaction
A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.
Owner:DMS CO LTD
Method for manufacturing nanopowders of oxide through DC plasma thermal reaction
ActiveUS7125537B2Sufficient energyHigh purityMaterial nanotechnologyAluminium compoundsDispersityCooling down
A method for manufacturing powders of oxides in a nanometer level through a direct current plasma thermal reaction is disclosed. The energy required is provided by the plasma that is generated in the non-transferred DC plasma apparatus. Once the solid precursors are introduced into the plasma, the solid precursors are vaporized and oxidized in the plasma reaction region of the non-transferred DC plasma apparatus continuously. Then, the oxide powders in a nanometer scale can form homogeneously and continuously. By controlling the nozzle size, the speed of the plasma can be adjusted and the coarsening and agglomeration of the nanopowders can be effectively prevented. Finally, oxide nanopowders of high-purity and high-dispersity are obtained by cooling down the plasma gas containing the vaporized and oxidized precursor through a vortical cooling-gas.
Owner:IND TECH RES INST