700 results about "Plasma reaction" patented technology

An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.

A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.

Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.

A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

A method for forming a film having a low dielectric constant and high mechanical hardness on a semiconductor substrate by plasma reaction includes the steps of: (i) introducing a silicon-containing hydrocarbon gas as a source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and (ii) applying radio-frequency (RF) power of 1,000 W or higher to the reaction space while maintaining a pressure of the reaction space at 100 Pa or higher to activate plasma polymerization reaction in the reaction space, thereby forming a thin film on the semiconductor substrate.

The invention discloses a method for treating waste incineration fly ash by using plasmas. The method comprises the following steps of: regulating the weight ratio of CaO to SiO2 in waste incineration fly ash; then granulating and compressing into blocks for pretreatment; sending the treated fly ash into a metal melting pool in a plasma reaction furnace through a dividing wheel and quenching fly ash melts into granules through water; and harmlessly treating tail gas in the furnace through a treatment system. The invention solves the problem of molten glass during treating the waste incineration fly ash by adopting plasma equipment, the problem of bridging in a feeding process, the problem of jamming of a feeder, the problem of pipeline blockage caused by the diffusion of the fly ash alongwith the tail gas, the problem of obtaining glass harmless to the environment by retreating the melts and the problem of tail gas innocent treatment.

An apparatus for deposition of plasma reaction films includes a substrate for the deposition of either thin or thick films. The substrate also allows for a film deposition which adheres to the substrate, and also films which may be removed after deposition. The cathode may be fabricated from individual wires, or it may be fabricated from a single conductor. A macro-particle filter which preferentially traps larger particles may be introduced between a porous cathode and the deposition surface. The macro-particle filter may also carry electrical current as is useful for generating a magnetic field such that a Lorentz force acts preferentially on ionized particles, allowing them to pass through the filter while trapping macroparticles that are not influenced by the magnetic field.

An apparatus and method for simultaneously removing materials from fluids without the need for added chemicals, and without the formation of toxic byproducts, by high-density plasma reaction chemistry is described. Applications to removal of contaminants, such as pesticides, organics, PPCPs, and pathogens, as examples, from water are discussed. Changes in the quality of the raw water are not expected to adversely affect the decontamination process.

The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl₄ gas, forming a plasma reaction Ti film by a plasma reaction using a TiCl₄ gas, carrying out plasma treatment with an H₂ gas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NH₃ gas and plasma treatment with an NH₃ gas.

An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

In the case of performing at least two plasma processing steps in a common plasma reaction chamber, a CW AC power or a pulse-modulated AC power is appropriately selected as a power for plasma processing in each step. Thereby, even in a step where plasma processing conditions are limited due to apparatus configurations, the plasma processing can be performed in more various manners. Further, uniform plasma can be generated between electrodes and a quantity of a power to be supplied between the electrodes can be reduced, by using the pulse-modulated AC power. Thereby, a plasma processing speed can be reduced so that throughput control is facilitated.

A process for depositing a film at a high rate and with superior step coverage properties, which comprises installing a pair of electrodes crossing with another pair of electrodes making a right angle with respect to the another pair, and applying a high frequency power differing in phase to the electrodes in order to apply a high frequency power having a Lissajous' waveform in the reaction space during the deposition of a film on a substrate.

Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.

A plasma processing system for etching a semiconductor wafer comprises: 1) a plasma chamber in which the semiconductor wafer may be mounted; 2) an upper ring capable of being mounted on an upper opening of the plasma chamber, wherein a central portion of the upper ring forms a hole; and 3) an electrode plate having a plurality of vias therethrough. The electrode plate is disposed in the hole in the upper ring, wherein the central portion of the upper ring further forms a shelf for supporting the electrode plate in the hole.

A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.