23 results about "Nickel silicide" patented technology

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and / or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

In one example, a method of forming an integrated circuit includes receiving a partially formed semiconductor device over a substrate. The semiconductor device includes a semiconductor layer. A NixPty layer is formed on the semiconductor layer. A NimPtn layer is formed on the NixPty layer. The NixPty layer and the NimPtn layer are heated, thereby forming a nickel silicide layer extending into the semiconductor layer. A remaining portion of the NimPtn layer is removed.

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and / or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

The invention provides a manufacturing method of a semiconductor device, a silicon cap layer rich in impurity ions for inhibiting diffusion of cobalt, germanium and silicon is formed on a germanium-silicon source drain, and the silicon cap layer not only can react with subsequently deposited cobalt to form cobalt silicide, but also can be used as a barrier isolation layer, so that the performance of the semiconductor device is improved. Wherein the impurity ions can block diffusion channels among cobalt atoms, germanium atoms and silicon atoms, so that mutual excessive diffusion among the cobalt atoms, the germanium atoms and the silicon atoms under a high-temperature condition can be prevented, the formation of low-resistance-phase cobalt silicide is facilitated, the occurrence of cobalt silicide clusters on the germanium-silicon source drain can be inhibited in a subsequent high-temperature process, and the quality of the germanium-silicon source drain is improved. According to the manufacturing method, the thermal stability and resistance of the cobalt silicide in the high-temperature manufacturing process are guaranteed, the cobalt silicide is compatible with the germanium-silicon source drain, therefore, the cobalt silicide can replace nickel silicide to be suitable for manufacturing devices with technical nodes below 65 nm, the technical prejudice of application of the cobalt silicide is overcome, and finally the performance of the devices is improved.

The invention discloses a positive electrode material, a preparation method thereof and a lithium ion battery, the positive electrode material comprises a lithium ion battery positive electrode material and an additive, the additive comprises a metal silicide, and the metal silicide comprises one or more of cerium silicide, tungsten silicide, titanium silicide, zirconium silicide, nickel silicide and manganese silicide. According to the invention, the metal silicide is adopted as the additive and directly forms the electrode material (such as the positive electrode material) with the positive electrode material of the lithium ion battery, so that the interface problem caused by contact between the positive electrode material and an electrolyte is solved, and compared with directional modification treatment such as coating or doping on the positive electrode material of the lithium ion battery, the application has wider applicability.

The invention discloses an in-situ preparation method of a nickel silicide nanowire and the obtained nickel silicide nanowire, and belongs to the technical field of nano materials. The in-situ preparation method comprises the following steps: adding a nickel salt into a SiCw dispersion liquid for dissolving, then adding an NH4HCO3 aqueous solution, stirring for reaction, washing and drying a solid product obtained after the reaction, and then heating to 550-650 DEG C in an H2 atmosphere for calcining, thereby obtaining the nickel-nickel composite material. According to the preparation method, the silicon carbide whisker (SiCw) is used as a silicon source, the SiCw-coated Ni (CO3) 2.2 Ni (OH) 2.2 H2O precipitate is prepared through a heterogeneous precipitation method, then the nickel silicide nanowire is obtained through H2 calcination, the overall preparation process is simple, multiple high-temperature treatment is not needed, the requirement for equipment is low, and the obtained nickel silicide nanowire is high in purity and suitable for large-scale production.

To provide a semiconductor element.SOLUTION: A semiconductor element 10 includes a semiconductor layer 11 containing silicon, a first silicide layer 12 included in the semiconductor layer 11, and a second silicide layer 13 included in the first silicide layer 12. The first silicide layer 12 includes hafnium silicide, zirconium silicide, nickel silicide, and cobalt silicide containing metal that is different from titanium. The second silicide layer 12 includes TiSi2 with a C54 crystal structure. Thus, the contact resistance of the semiconductor element 10 can be reduced.SELECTED DRAWING: Figure 1

A sliding member includes a base material and a coating film made of a particle aggregate provided on a base material surface of the base material. The particle aggregate contains copper-based alloy particles, which have copper (Cu) as a main component and contain 3.5% by mass or more of nickel (Ni) and 0.001% by mass or more of silicon (Si), and in which a mass ratio of Ni to Si (Ni / Si) is 7 to 100 (inclusive). The copper-based alloy particles contain a precipitate of nickel silicide in a matrix containing at least copper and nickel. The particle aggregate solidifies due to localized melting of particle surfaces.

The present application relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel platinum alloy in self-aligned silicide, comprising the following steps: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at room temperature by using a photocatalytic reaction; d) removing the porous titanium dioxide layer by using a hydrogen peroxide complexation reaction; e) sequentially performing impurity removal, water washing and drying on the surface of the wafer to obtain self-aligned silicide. Compared with the prior art, the method for removing unreacted nickel platinum alloy in self-aligned silicide provided by the present application realizes overall good interaction by using specific process steps and conditions, can remove unreacted nickel platinum alloy in self-aligned silicide at room temperature, avoids the influence of high-temperature wet process on the thermal stability of nickel silicide compound, and does not lose nickel silicide, thereby improving the process stability of self-aligned silicide, and further improving the product yield.

The present invention discloses a high-specific-capacity modified nickel oxide cathode, which uses a modified nickel foil. The modified nickel foil is prepared by depositing a nanometer-scale nickel film on the surface of a nickel foil substrate. Monosilane is then reacted with the nickel film deposited on the surface of the nickel foil to generate nickel silicide nanowires, thereby obtaining a nickel foil modified with nickel silicide nanowires. Highly conductive nickel silicide is deposited on the surface of the nickel foil using hot-wire chemical vapor deposition (HWCVD) technology, effectively resolving the problem of poor conductivity of nickel oxide as a semiconductor material, thereby increasing the specific capacity of the active nickel oxide by more than 80%. As the number of cycles increases, the gap between the electrode material and the nickel foil gradually widens, resulting in poor contact of the active material and causing capacity decay. The introduction of a nickel silicide buffer layer can significantly improve the contact. The introduction of a nickel silicide buffer layer can significantly improve the reversibility of the active material, improving the cycle performance by more than 35%.

A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

This application proposes a method for fabricating a MOS device. The method includes: performing impurity doping on the source / drain regions of an initial chip substrate to obtain a first chip substrate; depositing a Ni sacrificial layer on the surface of the first chip substrate to obtain a second chip substrate, wherein a portion of the Ni sacrificial layer deposited into vias diffuses into the impurity-doped source / drain regions, forming a nickel silicide layer on top of the impurity-doped source / drain regions; etching the Ni sacrificial layer of the second chip substrate to obtain a third chip substrate; depositing a contact metal layer on the surface of the third chip substrate to obtain a fourth chip substrate; and heat-treating the fourth chip substrate to react the contact metal layer with the surface layer of the source / drain regions to form a nickel-containing metal silicide, thereby forming a MOS device. The technical solution of this application can improve the performance of MOS devices.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel-platinum alloy in self-aligned silicide, which comprises the following steps of: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at normal temperature by adopting a photocatalytic reaction; d) removing the porous titanium dioxide layer by adopting a hydrogen peroxide complexation reaction; and e) sequentially carrying out impurity removal, water washing and drying on the surface of the wafer to obtain the self-aligned silicide. Compared with the prior art, the method for removing the unreacted nickel-platinum alloy in the self-aligned silicide, provided by the invention, adopts specific process steps and conditions, realizes relatively good overall interaction, can remove the unreacted nickel-platinum alloy in the self-aligned silicide at normal temperature, avoids the influence of a high-temperature wet process on the thermal stability of the nickel-silicon compound, and improves the yield of the nickel-silicon compound. And the nickel silicide is not lost, so that the stability of the self-aligned silicide process is improved, and the product yield is further improved.

The application discloses a solar cell and a preparation method, an assembly and a system thereof. The solar cell comprises a silicon substrate, a doped layer and a passivation layer which are sequentially arranged on the silicon substrate, the passivation layer is provided with an electrode groove which locally exposes the doped layer, and the electrode groove is provided with a back electrode. The back electrode comprises a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer and an outer metal layer which are sequentially arranged on the doped layer. The seed metal silicide layer is one or more of a molybdenum silicide layer, a nickel silicide layer and a titanium silicide layer, the seed metal oxide thin layer is one or more of a molybdenum oxide thin layer, a nickel oxide thin layer and a titanium oxide thin layer, the thickness of the seed metal oxide thin layer is not more than 20 nm, and the mixed conductive layer is formed by mutual diffusion of the seed metal oxide and a seed metal-outer metal alloy body. The solar cell has a new electrode structure, can promote improvement of the electrode structure and performance, reduce the cost, has excellent current transmission performance and small metal composite loss.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate is provided, and a gate oxide layer, a gate structure, and a spacer structure are formed on the semiconductor substrate. The gate oxide layer is located between the gate structure and the semiconductor substrate in a vertical direction, and the spacer structure is located on a sidewall of the gate structure. A SiCoNi process is performed, and a ratio of nitrogen trifluoride (NF3) to ammonia (NH3) used in the SiCoNi process is greater than or equal to 0.35 and less than or equal to 0.4. A nickel silicide layer is formed in the semiconductor substrate after the SiCoNi process, and a part of the nickel silicide layer is located under the spacer structure in the vertical direction.

The invention relates to a method for forming an electrical contact (16). The method comprises grinding a silicon carbide surface (101) with a grinding disk having a grinding surface containing nickel or a nickel compound, such that particles (12) of nickel or a nickel compound from the grinding surface are deposited (210) in the ground silicon carbide surface; and tempering the ground silicon carbide surface (101g) by means of a laser, such that at least a portion of the deposited nickel particles (12) form (220) nickel silicide with the silicon of the silicon carbide.

The invention provides a manufacturing method of a metal silicide, which comprises the following steps of: forming a cobalt silicide with a required thickness on a silicon-containing semiconductor layer through multiple rounds of cobalt silicification treatment, depositing a silicon cap layer and a nickel metal layer on the cobalt silicide, and forming a nickel silicide on the cobalt silicide, so that the cobalt silicide can be used as a diffusion barrier layer; on one hand, in the process of forming the nickel silicide through annealing, diffusion of nickel atoms and silicon atoms is blocked, the problems that the formed nickel silicide is not uniform and low in low resistance state consistency due to the fact that the nickel atoms and the silicon atoms react too fast at some positions are solved, and various defects in the formed nickel silicide are greatly improved; the reduction of the resistance of the formed nickel silicide is facilitated; and on the other hand, the diffusion of nickel can be blocked in a high-temperature process after the low-resistance-phase nickel silicide is formed, so that the problems of tubular defects and the like caused by diffusion due to poor thermal stability of the nickel silicide at a high temperature are solved, the problem of electric leakage is reduced, and the reliability of the device is ensured.

The present application provides a silicon carbide diode as a JBS structure in which a Schottky junction and a pn junction are mixed, a silicon carbide semiconductor device that maintains a low forward voltage of an SBD structure and improves surge current resistance, and a manufacturing method of a silicon carbide semiconductor device. A metal material film (52) made of an aluminum film (53) and a nickel film (54) that are in contact with a p-type region (13) and a connection region (20a) portion of an FLR (21) that are exposed to openings (51a, 51b) of an oxide film (51) in sequence is caused to react with a semiconductor substrate (30) in two heat treatments at low and high temperatures, and a nickel silicide film (33) is formed in self-alignment on the oxide film (51). Next, after the remaining metal is removed, only a field oxide film (15) portion in the oxide film (51) remains, and a titanium film (31) that is in Schottky junction with an n ‑ -type drift region (12) is formed on an active region (10) and the connection region (20a) exposed to a contact hole (15a) of the field oxide film (15).

A method for preparing a MOS device. The method comprises: performing impurity doping treatment on a source / drain region of an initial chip substrate to obtain a first chip substrate; depositing a Ni sacrificial layer on a surface of the first chip substrate to obtain a second chip substrate, wherein a part of the Ni sacrificial layer that is deposited into a through hole diffuses to the source / drain region that has been subjected to impurity doping treatment, and a nickel silicide layer is formed on the top of the source / drain region that has been subjected to impurity doping treatment; performing etching treatment on the Ni sacrificial layer of the second chip substrate to obtain a third chip substrate; depositing a contact metal layer on a surface of the third chip substrate to obtain a fourth chip substrate; and performing thermal treatment on the fourth chip substrate, so that the contact metal layer reacts with a surface layer of the source / drain region to obtain a nickel-containing metal silicide, and thus a MOS device is formed.

A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate is provided, and a gate oxide layer, a gate structure and a spacer structure are formed on the semiconductor substrate. The gate oxide layer is located between the gate structure and the semiconductor substrate in a vertical direction, and the spacer structure is located on a sidewall of the gate structure. The SiCoNi process is performed, and the ratio of nitrogen trifluoride (NF3) to ammonia (NH3) used in the SiCoNi process is greater than or equal to 0.35 and less than or equal to 0.4. After the SiCoNi process, a nickel silicide layer is formed in the semiconductor substrate, and a portion of the nickel silicide layer is under the spacer structure in the vertical direction.

The present invention discloses an in-situ preparation method of nickel silicide nanowires and the obtained nickel silicide nanowires, belonging to the technical field of nanomaterials. The in-situ preparation method of the present invention comprises the following steps: adding nickel salt to SiC w The dispersion is dissolved, and then NH4HCO3 aqueous solution is added, stirred for reaction, and the solid product obtained after the reaction is washed and dried, and then heated to 550-650℃ and calcined under H2 atmosphere to obtain the product. w ) as the silicon source, and SiC was prepared by heterogeneous precipitation method. w @Ni(CO3)2·2Ni(OH)2·2H2O precipitation, followed by H2 calcination, yields nickel silicide nanowires. The overall preparation process is simple, does not require multiple high-temperature treatments, and has low equipment requirements. The resulting nickel silicide nanowires are high in purity and suitable for large-scale production.

The invention discloses a silicon carbide ohmic contact structure and a preparation method thereof. The silicon carbide ohmic contact structure comprises a silicon carbide substrate which comprises a substrate and an epitaxial layer which are sequentially stacked along a first direction perpendicular to the silicon carbide substrate; the injection region is located in the epitaxial layer; the sandwich structure comprises a first nickel silicide layer, a metal carbide layer and a second nickel silicide layer which are stacked in the first direction, the first nickel silicide layer makes contact with the injection region, and a metal carbide composition in the metal carbide layer contains transition metal. Through the design of the sandwich structure in the silicon carbide ohmic contact structure, the problems of poor interface quality, low reliability, cracks, stripping and the like of the silicon carbide ohmic contact structure in the related technology are solved.