9 results about "Nickel silicide" patented technology

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and / or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

A sliding member includes a base material and a coating film made of a particle aggregate provided on a base material surface of the base material. The particle aggregate contains copper-based alloy particles, which have copper (Cu) as a main component and contain 3.5% by mass or more of nickel (Ni) and 0.001% by mass or more of silicon (Si), and in which a mass ratio of Ni to Si (Ni / Si) is 7 to 100 (inclusive). The copper-based alloy particles contain a precipitate of nickel silicide in a matrix containing at least copper and nickel. The particle aggregate solidifies due to localized melting of particle surfaces.

The present application relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel platinum alloy in self-aligned silicide, comprising the following steps: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at room temperature by using a photocatalytic reaction; d) removing the porous titanium dioxide layer by using a hydrogen peroxide complexation reaction; e) sequentially performing impurity removal, water washing and drying on the surface of the wafer to obtain self-aligned silicide. Compared with the prior art, the method for removing unreacted nickel platinum alloy in self-aligned silicide provided by the present application realizes overall good interaction by using specific process steps and conditions, can remove unreacted nickel platinum alloy in self-aligned silicide at room temperature, avoids the influence of high-temperature wet process on the thermal stability of nickel silicide compound, and does not lose nickel silicide, thereby improving the process stability of self-aligned silicide, and further improving the product yield.

A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

This application proposes a method for fabricating a MOS device. The method includes: performing impurity doping on the source / drain regions of an initial chip substrate to obtain a first chip substrate; depositing a Ni sacrificial layer on the surface of the first chip substrate to obtain a second chip substrate, wherein a portion of the Ni sacrificial layer deposited into vias diffuses into the impurity-doped source / drain regions, forming a nickel silicide layer on top of the impurity-doped source / drain regions; etching the Ni sacrificial layer of the second chip substrate to obtain a third chip substrate; depositing a contact metal layer on the surface of the third chip substrate to obtain a fourth chip substrate; and heat-treating the fourth chip substrate to react the contact metal layer with the surface layer of the source / drain regions to form a nickel-containing metal silicide, thereby forming a MOS device. The technical solution of this application can improve the performance of MOS devices.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel-platinum alloy in self-aligned silicide, which comprises the following steps of: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at normal temperature by adopting a photocatalytic reaction; d) removing the porous titanium dioxide layer by adopting a hydrogen peroxide complexation reaction; and e) sequentially carrying out impurity removal, water washing and drying on the surface of the wafer to obtain the self-aligned silicide. Compared with the prior art, the method for removing the unreacted nickel-platinum alloy in the self-aligned silicide, provided by the invention, adopts specific process steps and conditions, realizes relatively good overall interaction, can remove the unreacted nickel-platinum alloy in the self-aligned silicide at normal temperature, avoids the influence of a high-temperature wet process on the thermal stability of the nickel-silicon compound, and improves the yield of the nickel-silicon compound. And the nickel silicide is not lost, so that the stability of the self-aligned silicide process is improved, and the product yield is further improved.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

The invention relates to a method for forming an electrical contact (16). The method comprises grinding a silicon carbide surface (101) with a grinding disk having a grinding surface containing nickel or a nickel compound, such that particles (12) of nickel or a nickel compound from the grinding surface are deposited (210) in the ground silicon carbide surface; and tempering the ground silicon carbide surface (101g) by means of a laser, such that at least a portion of the deposited nickel particles (12) form (220) nickel silicide with the silicon of the silicon carbide.

A method for preparing a MOS device. The method comprises: performing impurity doping treatment on a source / drain region of an initial chip substrate to obtain a first chip substrate; depositing a Ni sacrificial layer on a surface of the first chip substrate to obtain a second chip substrate, wherein a part of the Ni sacrificial layer that is deposited into a through hole diffuses to the source / drain region that has been subjected to impurity doping treatment, and a nickel silicide layer is formed on the top of the source / drain region that has been subjected to impurity doping treatment; performing etching treatment on the Ni sacrificial layer of the second chip substrate to obtain a third chip substrate; depositing a contact metal layer on a surface of the third chip substrate to obtain a fourth chip substrate; and performing thermal treatment on the fourth chip substrate, so that the contact metal layer reacts with a surface layer of the source / drain region to obtain a nickel-containing metal silicide, and thus a MOS device is formed.