61results about How to "Interdiffusion" patented technology

The introduction of a barrier diffusion material, such as nitrogen, into a silicon-containing conductive region, for example the drain and source regions and the gate electrode of a field effect transistor, allows the formation of nickel silicide, which is substantially thermally stable up to temperatures of 500° C. Thus, the device performance may significantly improve as the sheet resistance of nickel silicide is significantly less than that of nickel disilicide.

The invention relates to a laser welding method of a titanium alloy-stainless steel dissimilar metal by adopting a composite intermediate layer, and belongs to the technical field of material welding (connection). According to the method, laser is adopted as a welding heat source, and a Ta/V/Fe composite layer is used as an intermediate layer material, so that formation of an omega brittle phase in a titanium alloy-vanadium welding line and an alpha brittle phase in a vanadium-stainless steel welding line can be controlled, the joint brittleness can be reduced, and the joint performance can be improved; by adopting the two welding, a high-quality high-efficiency welding joint which is made of a dissimilar metal material and contains a titanium alloy-vanadium welding line, an unmolten vanadium layer and a vanadium-stainless steel welding line can be obtained. The process comprises the steps of plate assembling and clamping, preload adjustment of a titanium alloy-intermediate layer-stainless steel contact face, and laser welding along the center line of a Ta intermediate layer and the center line of a Fe intermediate layer, so that connection of the titanium alloy-stainless steel dissimilar metal can be realized. The method has the advantages of stable welding process, attracted welding line formation, no welding defects including crack, pore, undercutting, uncomplete welding, incomplete fusion and the like, and good welding process performance.

The invention relates to a preparation method of a stainless steel surface copper-silver diffusion coating layer, which is characterized in that: a double-layer glow ion metal cementation method is utilized to infiltrate copper on the surface of a stainless steel base material, and an oxidized layer and a copper film on the surface of the stainless steel base material are removed; then a chemical plating method is utilized to plate silver on the surface of the stainless steel base material; and finally thermal diffusion treatment on the stainless steel base material after being plated with silver is carried out, so an antibacterial sterilization film layer with graded distribution of copper and silver on the surface of the stainless steel base material is formed. The antibacterial stainless steel can greatly improve the antibacterial and sterilization effect under the common effect of the copper and the silver, can reduce the production cost, and can solve the problem of the great consumption of the energy and the raw material caused by the integral smelting method. The method has good repeatability, can easily control the quality, is simple to operate, and can be widely applicable to the production of the antibacterial stainless steel product.

An internal cavity structure of the push bar kiln used for preparing VN alloy is composed of internal cavity, cover plate, side wall and tracks. A push bar kiln is longitudinally and sequentially composed of the low-temp segment with 5 temp regions, the transition segment with 4 temp regions, the high-temp segment with 7 temp regions, and the cooling segment consisting of natural cooling region and forced cooling region. It features that different but proper refractories are chosen for different temp regions. Its internal cavity has 3 separated channels. The central channel is the kiln cavity and two side channels are isolated heating element ones.

The invention discloses a laser-induced monotectic and isomorphous reaction welding method for a titanium-nickel heterogenic joint. According to the method, two layers of composite interlayer solder are added between a titanium material and a nickel material, niobium metal serves as the first layer of composite interlayer solder, copper metal serves as the second layer of composite interlayer solder, the bonding interface of the niobium metal and the titanium material is the interface 1, the bonding interface of the niobium metal and the copper metal is the interface 2, the bonding interface of the copper metal and the nickel material is the interface 3, and the focal point of a welding heat source is located near the interface 1; and in the welding process, heat generated by the welding heat source forms a fusion welding mode on the bonding interface of the first layer of composite interlayer solder and the titanium, and the heat is higher than the melting point of the second layer ofcomposite interlayer solder when transmitted to the interface 2 and the interface 3 through the first layer of composite interlayer solder. By means of the welding method, formation of titanium-nickel intermetallic compounds is avoided, a fusion welding seam is formed at the interface 1, soldered seams are formed at the interface 2 and the interface 3 at the same time, and the obtained titanium-nickel heterogenic metal joint achieves the tensile strength of 200-230 MPa and the elongation percentage of 2-4%.

The invention pertains to the field of hot-dip galvanized steel sheet manufacturing; the technical problem to be solved is to provide a production method of a hot-dip galvanized steel sheet. The production method specifically comprises the steps that: the steel plate is pickled and annealed, and hot-dip galvanizing operation is carried out; during the operation, the temperature of starting to plate is 475 to 485 DEG C; the plating temperature in the zinc pot is 450 to 460 DEG C; Fe content in plating bath is less than 0.03 percent; Al content in plating bath is 0.16 to 0.18 percent; the speed of machine unit is 100 to 110m/min; the cooling speed of the steel sheet is 0 percent; depth to span temperature is 235 to 245 DEG C. By adopting the technical conditions, the ratio Al/Zn of atomic concentration of Al and Zn in Fe-Al intermediate layer is larger than 0.9; and the circumstances that Gamma phase and Delta phase are relatively thin and Xi phase is small can not be formed in a plating layer, and the most part of the plating layer is made up of Eta phase, and the crystal grain Zn (002) with optimized orientation is formed, thus causing the performance of attachment, scratch resistance, wear resistance to be greatly improved.

The invention discloses a preparation method of an interface strong metallurgical bonding metal layered composite material, and belongs to the technical field of metal layered composite material preparation. The method comprises the steps of heating to increase the temperature of a whole titanium/steel layered pre-composite blank to 705 to 875 DEG C, and conducting heat preservation; increasing temperature and heating the surface of a titanium material and the surface of a steel material of the titanium/steel layered pre-composite blank, respectively heating the areas, which are 0.5 to 0.8 time of the thickness of the titanium material and the thickness of the steel material, of the surface of the titanium material and the surface of the steel material towards the direction of a compositeinterface to 935 to 1350 DEG C, keeping the temperature of the composite interface at 705 to 875 DEG C, and then conducting heat preservation; and conducting 1 to 15 passes of hot rolling compoundingon the heated titanium/steel layered pre-composite blank, then conducting air cooling to the room temperature, and obtaining a titanium/steel layered composite plate strip. The method can be used forpreparing the titanium/steel layered composite plate strip with high interface bonding strength at low cost and high efficiency.

The invention provides a silicon/carbon composite material and a preparation method thereof and application of a silicon/carbon composite material. The preparation method comprises the following stepsof: taking silicate with an aquifer-shaped structure as a silicon source; performing rapid heating treatment on the mixture in an inert atmosphere; uniformly coating a layer of nanocarbon on the surface of a silicon/carbon composite material by adopting a chemical vapor deposition method, reducing silicon oxide by a molten salt system after acid pickling and impurity removal, removing impuritiesby acid pickling, performing etching by hydrofluoric acid to remove molten salt and other oxides, and performing treating to obtain the silicon/carbon composite material. According to the composite material disclosed by the invention, holes between the layers and the internal portion of the composite material inhibit the volume expansion of silicon in a charging and discharging process and stabilizes the solid electrolyte interface film formed in the charging and discharging process, so that the rate capability and the cycle performance of the lithium ion battery are improved, the coating of the carbon layer is beneficial to improving the conductivity of the material, improving the charge transfer rate at the interface of the material and the electrolyte, inhibiting the polarization phenomenon in the cycle process and improving the electrochemical performance.

The invention relates to the field of titanium steel composite board preparation and machining, in particular to a method for rolling a nickel interlayer titanium steel composite board through the large rolling reduction. According to the technical scheme, the method includes the following steps that symmetric assembling is conducted according to the steel plate/titanium plate/nickel foil/steel plate sequence, the periphery of a blank is welded, the interior of the blank is vacuumized, and then a combined blank is acquired; the combined blank is heated for 120 min to 360 min, wherein the heating temperature ranges from 940 DEG C to 1000 DEG C; the heated combined blank is rolled, and then the titanium steel composite board is obtained. The titanium steel composite board obtained through the method is good in plate cut, no significant defect is formed on the surface, no titanium/iron compound is generated on a bonding interface, the bonding effect is good, and the bonding strength is larger than 230 MPa and is far larger than that of similar titanium steel composite board in the national standard.

The invention pertains to the field of hot-dip galvanized steel sheet manufacturing; the technical problem to be solved is to provide a production method of a hot-dip galvanized steel sheet. The production method specifically comprises the steps that: the steel plate is pickled and annealed, and hot-dip galvanizing operation is carried out; during the operation, the temperature of starting to plate is 455 to 465 DEG C; the plating temperature in the zinc pot is 450 to 460 DEG C; Fe content in plating bath is less than 0.03 percent; Al content in plating bath is 0.16 to 0.18 percent; the speed of machine unit is 100 to 110m/min; the cooling speed of steel sheet is 0 percent; depth to span temperature in cooling section is 210 to 220 DEG C. By adopting the technical conditions, the ratio Al/Zn of atomic concentration of Al and Zn in Fe-Al intermediate layer is larger than 0.75; and the circumstances that Gamma phase and Delta phase are relatively thin and Xi phase is small can not be formed in a plating layer, and the most part of the plating layer is made up of Eta phase, and the crystal grain Zn (002) with optimized orientation is formed, thus causing the performance of attachment, scratch resistance, wear resistance to be greatly improved.

A method for producing a component, in particular a rotor wheel, includes positioning a main body, a fusion-weldable attachment layer, and a barrier layer. The main body has a first alloy in an attachment region. The fusion-weldable attachment layer is positioned in the attachment region of the main body and has a second alloy which differs from the first alloy. The barrier layer is positioned between the main body and the fusion-weldable attachment layer. The barrier layer is configured to prevent a reaction of the first alloy of the main body with the second alloy of the fusion-weldable attachment layer during a thermal treatment. The method further includes heating the main body, the barrier layer, and the fusion-weldable attachment layer to connect the main body, the barrier layer, and the fusion-weldable attachment layer to one another.

The invention belongs to the technical field of surface protection, and discloses a TiB2-based coating with a multicycle structure and a preparation method thereof. The TiB2-based coating is formed bysputtering deposition on a substrate by taking a TiB2 target and a metal target as raw materials and adopting magnetron sputtering coating; and the TiB2-based coating is of a multicycle structure inwhich a TiB2 layer and an elemental metal layer are overlapped with each other, the adjacent TiB2 layer and the elemental metal layer are in a large period, meanwhile, periodic structures exist in theTiB2 layer and the elemental metal layer respectively, the period in the TiB2 layer is formed by alternately overlapping a TiB2-rich layer and a TiB2-poor layer, and the period in the elemental metallayer is formed by alternately overlapping a metal-rich layer and a metal-poor layer. The coating not only reduces the residual stress, but also integrates the characteristics of high hardness, highstrength, high high-temperature oxidation resistance and good bonding force of the single-layer TiB2, and is used for protecting the surfaces of products such as mechanical parts and knife molds.

The invention discloses a microcrystalline Si-SbxTe1-x composite phase change material and a preparation method thereof. The composite phase change material is formed by composition of microcrystalline-state Si and a phase change material SbxTe1-x, wherein x is not less than 0.1 and not more than 0.9. The preparation method comprises the steps of forming an amorphous Si-SbxTe1-x material by PVD (physical vapor deposition), then annealing in a hydrogen atmosphere to form the microcrystalline Si-SbxTe1-x composite phase change material, and finally heating and dehydrogenating to complete the preparation of the material. In the microcrystalline Si-SbxTe1-x composite phase change material disclosed by the invention, the existence of the microcrystalline Si can effectively inhibit oxidation, so that mutual diffusion of the Si and the SbxTe1-x can be hindered, and the microcrystalline Si-SbxTe1-x composite phase change material is more stable. Simultaneously, the microcrystalline-state Si can change the current distribution in phase change so as to be conductive to reducing power consumption, prolonging service life and improving operation stability of a phase change memory.

The invention discloses Ce and La codoped modified sealing-in microcrystalline glass, which comprises the following ingredients through being metered by mole percentage: 0 to 10 percent of B2O3, 0 to 10 percent of Al2O3, 30 to 40 percent of SiO2, 20 to 40 percent of MO (one or several materials from MgO, CaO, SrO and BaO) and 15 to 40 percent of RO (CeO2 and La2O3). Through the design of invert glass, the sealing-in glass (greater than 15 mole percent) with high concentration Ce and La is obtained. Through the cooperated effect of the Ce and the La, the network structure of the glass can be obviously enhanced, and the insulation performance and the high-temperature chemical stability are effectively improved. The Ce and La codoped modified sealing-in microcrystalline glass has the advantages that preparing raw materials are simple and can be easily obtained, the process is stable, the cost is low, the process is simple and feasible, and the practical and industrialized conditions are reached.

The invention discloses a Ce and Hf co-doped modified sealing glass-ceramic. The Ce and Hf co-doped modified sealing glass-ceramic comprises the following raw materials in mole percentage by weight: 0-10% of B2O3, 0-10% of Al2O3, 25-40% of SiO2, 30-50% of MO ( one or more of MgO, CaO, SrO and BaO), and 5-30% of RO2 (CeO2 and HfO2). Through the co-doping of the CeO2 and HfO2, the generation of high-impedance-phase Ce0.5Hf0.5O2 is promoted, and the high temperature insulativity and the high temperature chemical stability of the sealing glass-ceramic are obviously improved. The preparation raw materials of the Ce and Hf co-doped modified sealing glass-ceramic are simple and easy to obtain, the process is stable, simple and feasible, the cost is low, and practical and industrial conditions can be met.

The invention provides a tunnel magnetoresistor and a manufacturing method thereof. The tunnel magnetoresistor comprises a first pinning layer, a free layer arranged opposite to the first pinning layer, a tunneling barrier layer located between the first pinning layer and the free layer, and a second pinning layer positioned on one side, back to the tunneling barrier layer, of the free layer. The second pinning layer can provide a weak exchange bias field for the free layer, and after an external environment temperature or an external magnetic field is removed, the exchange bias field can pin the free layer in the direction of an initial state. Therefore, the problem that a magnetization curve drifts due to a fact that the initial state of the tunnel magnetoresistor vortex magnetization is unstable and the external environment changes easily is solved, and the effects of stabilizing the free layer and improving the temperature stability of the free layer are achieved.

The invention provides a tunnel magnetoresistor and a manufacturing method thereof. The tunnel magnetoresistor comprises a first pinning layer, a free layer arranged opposite to the first pinning layer, a tunneling barrier layer positioned between the first pinning layer and the free layer, a pinned layer located between the first pinning layer and the tunneling barrier layer, and a second pinning layer positioned on one side, opposite to the tunneling barrier layer, of the free layer. The first pinning layer and the pinned layer form a first pinning field, the second pinning layer and the free layer form a second pinning field, and the directions of the first pinning field and the second pinning field are parallel to the opposite surfaces of the first pinning layer and the second pinning layer; the included angle between the direction of the first pinning field and the direction of the second pinning field is 70-110 degrees; and a saturation field of the tunnel magnetoresistor is increased so that the linear range of the tunnel magnetoresistor is enlarged.