5results about "Galvano-magnetic material selection" patented technology

To provide a spin wave excitation detection structure that has a high strength structure, a high spin wave intensity that can be excited, and a wide frequency bandwidth of the spin wave that can be excited.SOLUTION: A spin wave excitation detection structure that excites and detects spin waves includes a support substrate, a conductive film provided on the support substrate, an insulating magnetic film provided on the conductor film, and a conductor wire provided on the insulating magnetic film.SELECTED DRAWING: Figure 1

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

To provide a thin film inductor element capable of presenting a sufficient imaginative inductor function even while reducing an operation current in the case of mounting in an electric circuit.SOLUTION: A thin film inductor element comprises a laminated layer, in which a magnetic substance layer and a non-magnetic substance layer are laminated, and a pair of electrodes. The magnetic substance layer and the non-magnetic substance layer extend in any shape in a direction orthogonal with a lamination direction. The magnetic substance layer has a substantially uniform magnetized structure containing a lamination direction component. The non-magnetic substance layer is a structure which is an insulator and of which the surface can be conducted. The pair of electrodes is provided at positioned in the vicinity of both ends, where the laminated film extends, and in contact with at least a surface of the non-magnetic substance layer. A current which is modulated in frequencies from 1 kHz to 1 GHz is applied.SELECTED DRAWING: Figure 4

To realize a magnetic element capable of suppressing deviation of a magnetic structure from a predetermined movement direction.SOLUTION: A magnetic element (1) includes a magnetic member (11), and a first heavy metal member (12) and a second heavy metal member (13) formed on the magnetic member (11), and in the magnetic member (11), a circular magnetic structure can exist across a portion where the first heavy metal member (12) is formed and a portion where the second heavy metal member (13) is formed.SELECTED DRAWING: Figure 1

To provide an in-plane magnetization film which allows 2.00 kOe or more in coercive force Hc and 2.00 memu / cm2 or more in residual magnetization Mrt per unit area to be achieved by means of neither using a nonmagnetic underlying layer for accelerating the in-plane orientation of a magnetic layer nor performing a film formation by heating.SOLUTION: An in-plane magnetization film comprises an initial magnetic layer 12A containing Co, Pt and a nonmagnetic grain boundary material, including Co of 44-82 at% and Pt of 18-56 at% to a total quantity of metal components, including the nonmagnetic grain boundary material of 2.0-31.0 vol.% to a whole volume, and having a thickness of 1-32 nm, and a magnetic layer main body part 12B formed on the initial magnetic layer 12A, containing Co, Pt and a nonmagnetic oxide, including Co of 44-82 at% and Pt of 18-56 at% to a total quantity of metal components, and including the nonmagnetic oxide of 2.0-31.0 vol.% to a whole volume. The nonmagnetic grain boundary material of the initial magnetic layer 12A contains at least one kind of Zn oxide and Ta oxide.SELECTED DRAWING: Figure 1