16results about "Galvano-magnetic material selection" patented technology

To provide a spin wave excitation detection structure that has a high strength structure, a high spin wave intensity that can be excited, and a wide frequency bandwidth of the spin wave that can be excited.SOLUTION: A spin wave excitation detection structure that excites and detects spin waves includes a support substrate, a conductive film provided on the support substrate, an insulating magnetic film provided on the conductor film, and a conductor wire provided on the insulating magnetic film.SELECTED DRAWING: Figure 1

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

To provide a thin film inductor element capable of presenting a sufficient imaginative inductor function even while reducing an operation current in the case of mounting in an electric circuit.SOLUTION: A thin film inductor element comprises a laminated layer, in which a magnetic substance layer and a non-magnetic substance layer are laminated, and a pair of electrodes. The magnetic substance layer and the non-magnetic substance layer extend in any shape in a direction orthogonal with a lamination direction. The magnetic substance layer has a substantially uniform magnetized structure containing a lamination direction component. The non-magnetic substance layer is a structure which is an insulator and of which the surface can be conducted. The pair of electrodes is provided at positioned in the vicinity of both ends, where the laminated film extends, and in contact with at least a surface of the non-magnetic substance layer. A current which is modulated in frequencies from 1 kHz to 1 GHz is applied.SELECTED DRAWING: Figure 4

To realize a magnetic element capable of suppressing deviation of a magnetic structure from a predetermined movement direction.SOLUTION: A magnetic element (1) includes a magnetic member (11), and a first heavy metal member (12) and a second heavy metal member (13) formed on the magnetic member (11), and in the magnetic member (11), a circular magnetic structure can exist across a portion where the first heavy metal member (12) is formed and a portion where the second heavy metal member (13) is formed.SELECTED DRAWING: Figure 1

A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and / or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

To provide a magnetic film, a magnetoresistive element, and a magnetic memory that maintain the vertical magnetic anisotropy of a magnetic layer in a fixed layer and enables strong pinning even by annealing after a protective film is formed, while taking advantage of a top pin structure and a bottom pin structure.SOLUTION: A fixed layer of a magnetic film has a basic configuration in which a first magnetic layer 21, a first non-magnetic layer 31, a first Pt layer 41, and a second magnetic layer 22 are arranged adjacent to each other in this order. The magnetization directions of the first magnetic layer 21 and the second magnetic layer 22 are both perpendicular to the film surface, and an antiferromagnetic bond is formed between the first magnetic layer 21 and the second magnetic layer 22.SELECTED DRAWING: Figure 22

To provide an electronic device capable of eliminating a need for an external magnetic field, being available for a random number generation element or a memory element that can output relatively large reading signals and also available for an oscillation / detection element with variability of an output / input frequency.SOLUTION: An electronic device comprises a main body, an input terminal, and an output terminal. The main body is configured by laminating on a substrate a spin torque generation layer and a non-collinear antiferromagnetic layer in a lamination direction of this order or a reverse order. The input terminal is arranged at both ends in an arbitrary one direction parallel to a lamination plane of the spin torque generation layer. The non-collinear antiferromagnetic layer has a non-collinear magnetic order in a plane made by the arbitrary one direction and the lamination direction.SELECTED DRAWING: Figure 1

To provide a magnetic junction with oxide intermediate film containing glass molding agent and method for providing the same, and magnetic device.SOLUTION: The magnetic junction includes a free film and an oxide intermediate film on the free film. The oxide intermediate film includes at least one glass molding agent and the magnetic junction further includes a reference film and a non-magnetic spacer film arranged between the reference film and the free film. The free film is arranged between the non-magnetic spacer film and the oxide intermediate film.SELECTED DRAWING: Figure 1

To provide a light detection element, a receiver, and a light sensor device with excellent heat dissipation.SOLUTION: This light detection element has a magnetic element with a first ferromagnetic layer to which light is radiated, a second ferromagnetic layer, a spacer layer sandwiched between the first and second ferromagnetic layers, a first electrode that contacts a first side of the first ferromagnetic layer in a stacking direction of the magnetic element, a second electrode that contacts a second side opposite the first side, and a first high thermal conductivity layer that is outside the first ferromagnetic layer and has higher thermal conductivity than the first electrode.SELECTED DRAWING: Figure 1

To provide a spin injection source capable of improving heat resistance and reducing power consumption for magnetization reversal of a ferromagnetic material.SOLUTION: A spin injection source 102 according to an embodiment includes a half-Heusler alloy topological semimetal with a Dirac-type surface state in contact with a ferromagnetic material 113. The half-Heusler alloy topological semimetal supplies a spin current to a ferromagnetic material on the basis of a current flowing in a direction parallel to a first surface in contact with the ferromagnetic material.SELECTED DRAWING: Figure 14

To provide a domain wall moving element and a magnetic array having a large MR ratio and high domain wall controllability.SOLUTION: A domain wall moving element according to an embodiment includes a magnetoresistance effect element having a reference layer, a non-magnetic layer, and a domain wall moving layer, from the side closest to a substrate, and a first magnetization fixed layer and a second magnetization fixed layer that are in contact with the domain wall moving layer and are separated from each other, and the domain wall moving layer includes a ferromagnetic layer including a plurality of insertion layers, and the ferromagnetic layer contains Co and Fe, has perpendicular magnetic anisotropy, and when writing is performed, a writing current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall moving layer .SELECTED DRAWING: Figure 3

To provide a magnetic material that can be fabricated on a non-single-crystal substrate or a flexible substrate and has excellent thermoelectric conversion efficiency, a laminate, a manufacturing method of the laminate, and a thermoelectric conversion element and a magnetic sensor having the laminate.SOLUTION: A magnetic material has a polycrystalline Co-based Heusler alloy and having a film shape, and a crystal structure of the Co-based Heusler alloy is at least one selected from the group consisting of an L21 ordered structure and a B2 ordered structure, and the crystal orientation of the Co-based Heusler alloy is oriented in the thickness direction of the film.SELECTED DRAWING: Figure 1

Disclosed herein is a spin-orbit torque device including a lower ferromagnetic layer, a non-magnetic layer bonded to the lower ferromagnetic layer, and an upper ferromagnetic layer bonded to the non-magnetic layer, wherein a magnetization orientation of the lower ferromagnetic layer is randomly distributed. According to the present disclosure, it is possible to provide a magnetic memory device which cannot be physically duplicated and has reconfigurability using a spin-orbit torque.

To suppress degrading of S / N in an output of a magnetic sensor utilizing a magnetic impedance effect.SOLUTION: A magnetic sensor 1 comprises a sensitive element 31, which includes: a plurality of soft magnetic body layers 105; a nonmagnetic amorphous metal layers 106 provided respectively between the plurality of soft magnetic body layers; and soft magnetic body layers 105 facing while sandwiching the nonmagnetic amorphous metal layers 106 are anti-ferromagnetic coupled, and senses a magnetic field by a magnetic impedance effect.SELECTED DRAWING: Figure 2

To provide an in-plane magnetization film which allows 2.00 kOe or more in coercive force Hc and 2.00 memu / cm2 or more in residual magnetization Mrt per unit area to be achieved by means of neither using a nonmagnetic underlying layer for accelerating the in-plane orientation of a magnetic layer nor performing a film formation by heating.SOLUTION: An in-plane magnetization film comprises an initial magnetic layer 12A containing Co, Pt and a nonmagnetic grain boundary material, including Co of 44-82 at% and Pt of 18-56 at% to a total quantity of metal components, including the nonmagnetic grain boundary material of 2.0-31.0 vol.% to a whole volume, and having a thickness of 1-32 nm, and a magnetic layer main body part 12B formed on the initial magnetic layer 12A, containing Co, Pt and a nonmagnetic oxide, including Co of 44-82 at% and Pt of 18-56 at% to a total quantity of metal components, and including the nonmagnetic oxide of 2.0-31.0 vol.% to a whole volume. The nonmagnetic grain boundary material of the initial magnetic layer 12A contains at least one kind of Zn oxide and Ta oxide.SELECTED DRAWING: Figure 1

a magnetic tunnel junction (2) comprising a reference layer (23) having a fixed reference magnetization (230), a sense ferromagnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense ferromagnetic layer (21) and the reference ferromagnetic layer (23); The sense ferromagnetic layer (21) a first sense ferromagnetic layer (211) in contact with the tunnel barrier layer (22); a second sense ferromagnetic layer (212); A magnetic field sensor for detecting a two-dimensional external magnetic field, comprising a first non-magnetic layer (213) between a first sense ferromagnetic layer (211) and a second sense ferromagnetic layer (212), The second sense ferromagnetic layer (212) comprises a plurality of multi-layer elements (216), each of which comprises a second non-magnetic layer (215) between two second ferromagnetic sense layers (214); The magnetic field sensor for detecting a two-dimensional external magnetic field is characterized in that the second sense ferromagnetic layer (212) has a thickness of 20 nm or less.