57results about "Spin-exchange-coupled multilayers" patented technology

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

This invention provides a nanoscale spin waveguide based on alternating magnet domain walls, belonging to the field of magnetic device technology. The device comprises, from bottom to top, a substrate, an alternating magnet thin film, and a microwave excitation source. The microwave excitation source excites an alternating magnetic field with a single frequency. The alternating magnetic field interacts with the magnetic moments of the alternating magnet thin film, causing the magnetic moments to precess. This precession is then propagated outward from the microwave excitation source in the form of a wave, forming a spin wave. By reducing the frequency of the alternating magnetic field, the spin wave propagates only within the domain walls of the alternating magnet thin film, realizing an alternating magnet domain wall spin waveguide. This invention reduces the difficulty of spin wave excitation, which is beneficial for reducing device energy consumption. Furthermore, this invention offers advantages in device miniaturization and high efficiency, and can promote the generation and development of spin wave devices based on anisotropic media, possessing broad application prospects.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

The present disclosure generally relates to spintronic devices comprising a high oxidation resistive cap layer. The spintronic stack comprises a buffer layer, a topological material (TM) layer comprising YPtBi or BiSb, an interlayer, a ferromagnetic layer, and a cap layer. The cap layer comprises a high resistance material selected from the group consisting of: (1 ) lrxHfyAlz or lrxZryAlz, where x is between about 40 at. % to about 90 at. %, y is about 0.5 at. % to about 60 at. %, and z is about 0.5 at. % to about 60 at. %; (2) ZrQX or HfQX, where X and Q are each individually selected from the group consisting of: Ru, Co, Cu, Ir, Pt, Ti, Nb, Ni, RuAI, and CoFe; (3) SixAli-xN, TixAh-xN, CrxAli-xN, and ZrxAh-xN, where x is a numeral between 0.005 and 1; and (4) nitrides of Si, Al, Ti, Cr, and Zr.

A magnetic device capable of field-free spin-orbit torque includes a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, wherein the free ferromagnetic layer includes an in-plane magnetic anisotropy ferrimagnetic layer, a perpendicular magnetic anisotropy free ferromagnetic layer, and a non-magnetic layer positioned between the in-plane magnetic anisotropy ferrimagnetic layer and the perpendicular magnetic anisotropy free ferromagnetic layer.

Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.

To provide a layer structure of an MR sensor for laser annealing. In an embodiment of the present invention, a magnetoresistive sensor layer structure for laser annealing is disclosed. The magnetoresistive sensor layer structure includes a substrate, a magnetoresistive sensing unit located on the substrate and including an antiferromagnetic pinning layer or a permanent magnet bias layer, an upper heat absorbing layer located above the magnetoresistive sensing unit and / or a lower heat absorbing layer located below the magnetoresistive sensing unit, where the product of the volume, specific heat, and density of the upper absorbing layer is greater than the product of the volume, specific heat, and density of the upper electrode layer, the product of the volume, specific heat, and density of the lower absorbing layer is greater than the product of the volume, specific heat, and density of the lower electrode layer, and when the writing temperature of the antiferromagnetic pinning layer or the permanent magnet bias layer is higher than the blocking temperature or Curie temperature corresponding thereto, the temperature of the lower electrode layer and the temperature of the upper electrode layer are lower than the melting point temperature corresponding thereto, respectively, the upper heat absorbing layer and / or the lower heat absorbing layer, a laser absorbing layer, and a laser transmitting layer. The embodiment of the present invention can solve the problem that the electrode layer is easily ablated.

A magnetoelectric spin-orbit (MESO) memory device comprises a substrate; an antiferromagnetic (AFM) magnon heterostructure above the substrate comprising: a first AFM layer; a multiferroic layer positioned above the first AFM layer; and a second AFM layer above the multiferroic layer; and a spin-orbit (S-O) metal layer above the AFM magnon heterostructure. Related methods and devices are also disclosed.

This spin inductor includes: a wiring layer; a first ferromagnetic layer which is in contact with a first surface of the wiring layer; and a second ferromagnetic layer which is in contact with a second surface of the wiring layer facing the first surface.

A spin-orbit torque (SOT) magnetic device with synthetic antiferromagnetic (SAF) structure, including a SOT layer for providing a spin current, a SAF structure composed of a first ferromagnetic layer, a nickel oxide (NiO) exchange coupling layer and a second ferromagnetic layer, and a capping layer on the SAF structure. This magnetoelectric device of oxide SAF structure can achieve zero-field switching through current-induced SOT, and can be used as the free layer of a magnetoresistive random access memory (MRAM).

The present disclosure is drawn to, among other things, a storage device. The storage device may include a magnetic tunnel junction (MTJ)-based storage array and a communication interface. The MTJ-based storage array may be configured to be damaged by a shorting voltage based on detection of a tamper event.

To provide a layer structure of an MR sensor for laser annealing. In an embodiment of the present invention, a magnetoresistive sensor layer structure for laser annealing is disclosed. The magnetoresistive sensor layer structure includes a substrate, a magnetoresistive sensing unit located on the substrate and including an antiferromagnetic pinning layer or a permanent magnet bias layer, an upper heat absorbing layer located above the magnetoresistive sensing unit and / or a lower heat absorbing layer located below the magnetoresistive sensing unit, where the product of the volume, specific heat, and density of the upper absorbing layer is greater than the product of the volume, specific heat, and density of the upper electrode layer, the product of the volume, specific heat, and density of the lower absorbing layer is greater than the product of the volume, specific heat, and density of the lower electrode layer, and when the writing temperature of the antiferromagnetic pinning layer or the permanent magnet bias layer is higher than the blocking temperature or Curie temperature corresponding thereto, the temperature of the lower electrode layer and the temperature of the upper electrode layer are lower than the melting point temperature corresponding thereto, respectively, the upper heat absorbing layer and / or the lower heat absorbing layer, a laser absorbing layer, and a laser transmitting layer. The embodiment of the present invention can solve the problem that the electrode layer is easily ablated.

The present application provides a film that can achieve a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm 2 The in-plane magnetization film has a thickness of 20 nm or more and 80 nm or less, contains 45 at% or more and 80 at% or less of the metal Co, contains 20 at% or more and 55 at% or less of the metal Pt, contains 3 vol% or more and 25 vol% or less of the oxide with respect to the entirety of the in-plane magnetization film, and has an average particle diameter in the in-plane direction of the magnetic crystal grains of 15 nm or more and 30 nm or less.

A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.

A method in one embodiment includes the step of manufacturing a tunnel magnetoresistance (TMR) element for sensing out-of-plane changes in magnetic field strength in a magnetic field. The manufacturing step includes depositing a plurality of antiferromagnetic layers having magnetization directions that alternate layer by layer between a first direction and a second direction opposite to the first direction. The uppermost layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing step further includes the steps of directly depositing a ferromagnetic layer on the uppermost layer, directly depositing a first multilayer structure on the ferromagnetic layer, directly depositing a metallic layer on the first multilayer structure, and directly depositing a second multilayer structure on the metallic layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to the xy plane, and the first direction is either the z direction or the -z direction.

The present disclosure concerns a magnetoresistive element comprising a reference layer (21) having a reference magnetization (210) oriented out-of-plane; a sense layer (23) having a sense magnetization (230) comprising a vortex configuration stable under the presence of an external magnetic field (60) and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field (60) varies in a direction out-of-plane; and a tunnel barrier layer (22) between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer (23) comprises a ferromagnetic material configured such that the sense magnetization is between 300 and1400 emu / cm3 and such that the sense layer (23) has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A / m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer.The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

Provided is a magnetic memory device including a moving element, a write element configured to inject a magnetic domain into the moving element, and a read element apart from the write element in a length direction of the moving element and configured to read the magnetic domain of the moving element. The moving element includes a free layer. A pinning site providing layer faces the free layer. The pinning site providing layer includes a plurality of first regions including an antiferromagnetic material. The plurality of first regions are apart from each other in the length direction of the moving element and lower the magnetic anisotropy energy of regions of the free layer facing the plurality of first regions. A plurality of pinning sites configured to pin the magnetic domains to regions of the free layer facing the plurality of first region may be provided by the plurality of first regions.

Methods and apparatus for a sensor having a TMR stack with first and second vortices that are antiferromagnetically coupled together in a synthetic anti-ferromagnet (SAF) arrangement to create a TMR free layer. Due to the opposite behavior of the vortices, and to the coupling which opposes them, relatively strong fields are needed to induce magnetic modifications in the free layer. With this arrangement, the free layer of the stack has relatively wide linear response.

Some embodiments of the present disclosure relate to a memory device. The memory device includes an active current path including a data storage element; and a reference current path including a reference resistance element. The reference resistance element has a resistance that differs from a resistance of the data storage element. A delay-sensing element has a first input coupled to the active current path and a second input coupled to the reference current path. The delay-sensing element is configured to sense a timing delay between a first signal on the active current path and a second signal on the reference current path. The delay-sensing element is further configured to determine a data state stored in the data storage element based on the timing delay.

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a buffer layer, a seed layer disposed over the buffer layer, a first ferromagnetic layer disposed over the seed layer, a tunnel barrier layer disposed over the first ferromagnetic layer and a second ferromagnetic layer disposed over the tunnel barrier layer. The seed layer includes a Cobalt (Co)-based film. The buffer layer includes cobalt (Co) and hafnium (Hf). The buffer layer is alloyed with chromium and has chromium content up to 20 at. %. The MTJ element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TMR coefficient desired for a low bit-error-rate (BER) read operation.