3113 results about "Interface layer" patented technology

Described are devices, methods, and kits for non-invasively measuring glucose. In general, the devices comprise skin patches for placement on a skin surface and measurement devices for measuring glucose collected in the patches. The patches may include an adhesive material, a collection layer, an interface layer, and a sweat-permeable membrane. The sweat-permeable membrane is configured to act as a barrier to epidermal contaminants and glucose brought to the skin surface via diffusion. In this way, non-correlatable skin surface glucose will not be measured. The patches may further include components to induce a local sweat response. The measurement device typically includes a display, a processor, and a measurement mechanism. The methods typically include the steps of wiping the skin surface with a wipe containing at least one solvent for removing glucose, placing a patch on a skin surface, and measuring glucose collected in the patch. Kits comprising the patch and measurement device are also described.

A system and a method for printing of three-dimensional models and apparatus for controlling the height and thickness of the layers of interface material forming the 3-D models being printed, is provided. The method includes the steps of dispensing a pre-determined quantity of interface material from at least one printing head to form at least one interface layer; leveling the dispensed interface material to a pre-determined height; curing the leveled interface material; and repeating the steps of dispensing, leveling and curing thereby producing a plurality of interface layers to a configured pattern layer for forming the three-dimensional model.

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

A method for fabricating a silicon oxide/silicon nitride/silicon oxide stacked layer structure is described. A bottom oxide layer is formed over a substrate. A surface treatment is then performed on the first silicon oxide layer to form an interface layer over the bottom oxide layer. The surface treatment is conducted in a nitrogen ambient. Thereafter, a silicon nitride layer is formed over the interface layer, followed by forming an upper silicon oxide layer over the silicon nitride layer.

A multilayered antenna package including: a radio frequency integrated circuit (RFIC) interface layer that is configured to transmit a radio frequency (RF) signal; a first dielectric layer that is disposed on the RFIC interface layer; a coplanar waveguide layer that is disposed on the first dielectric layer and is configured to receive the RF signal transmitted by RFIC layer; a second dielectric layer disposed on the coplanar waveguide layer; and an antenna portion that is disposed on the second dielectric layer and is configured to irradiate a signal that is transmitted from the coplanar waveguide layer.

An electrical network architecture including a reconfigurable interface layer, along with a corresponding reconfiguration methodology. The interface layer is comprised of reconfigurable interface devices which allow a plurality of sensors and actuators to communicate with a plurality of control units. Each sensor or actuator is connected to multiple interface devices, which in turn are connected to a bus. The control units are also connected to the bus. In the event of an interface device failure, other interface devices can be reconfigured to maintain communication between sensors, actuators and control units. In the event of a control unit failure, the interface devices can be reconfigured to route sensor and actuator message traffic to a different control unit which can handle the functions of the failed control unit. The overall number of control units can also be reduced, as each control unit has flexible access to many sensors and actuators.

A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.

A computer system includes at least one virtual machine that has a plurality of virtual processors all running on an underlying hardware platform. A software interface layer such as a virtual machine monitor establishes traces on primary structures located in a common memory space as needed for the different virtual processors. Whenever any one of the virtual processors generates a trace event, such as accessing a traced structure, then a notification is sent to at least the other virtual processors that have a trace on the accessed primary structure. In some applications, the VMM derives and maintains secondary structures corresponding to the primary structures, such as where the VMM converts, through binary translation, original code intended to run on a virtual processor into code that can be run on an underlying physical processor of the hardware platform. In these applications, the VMM may rederive or invalidate the secondary structures as needed upon receipt of the notification of the trace event. Different semantics are provided for the notification, providing different choices of performance versus guaranteed consistency between primary and secondary structures. In the preferred embodiment of the invention, a dedicated sub-system is included within the VMM for each virtual processor; each sub-system establishes traces, senses trace events, issues the notification, and performs other operations relating specifically to its respective virtual processor.

The present invention is directed to a method and management service platform for implementing a global ecosystem of interrelated services. The service platform is comprised of three distinct layers: a physical machine layer; a virtual machine layer and a layer of interrelated services. The physical machine layer may be deployed on large numbers of small generic servers in many geographic locations distributed for enterprise use. Associated with one or more servers are particular resources managed by that particular server. Any server in any geographic location can process any service needed by any client in any other geographic area. The operating system of each physical server is not used directly in the operating environment, but instead, each server runs a platform-independent programming language virtual machine on top of the operating system—this is the virtual machine layer. Services are location independent processing entities that are managed dynamically, configured dynamically, load their code remotely, and found and communicated with dynamically. A generic service container is a CPU process into which arbitrary software services may be homed to a host server at runtime. Thus, a virtual machine layer is an interface layer of service which supports the layer of interrelated srvices rather than the operating system of the physical machines.

A computer implemented method, data processing system, and computer program product for logical management and provisioning of business applications within the framework of an identity management system. The illustrative embodiments providing an interface layer to map respective attributes, permissions, and resource accounts in a data repository needed to represent access to business applications via a managed service in the identity management system. The illustrative embodiments define user entitlements on a user account associated with the managed service. The illustrative embodiments provision user access to the business applications via the managed service in the identity management system upon user request.

A heat exchanger and method of manufacturing thereof comprises an interface layer for cooling a heat source. The interface layer is coupled to the heat source and is configured to pass fluid therethrough. The heat exchanger further comprises a manifold layer that is coupled to the interface layer. The manifold layer includes at least one first port that is coupled to a first set of individualized holes which channel fluid through the first set. The manifold layer includes at least one second port coupled to a second set of individualized holes which channel fluid through the second set. The first set of holes and second set of holes are arranged to provide a minimized fluid path distance between the first and second ports to adequately cool the heat source. Preferably, each hole in the first set is positioned a closest optimal distance to an adjacent hole the second set.

A heat exchanger apparatus and method of manufacturing comprising: an interface layer for cooling a heat source and configured to pass fluid therethrough, the interface layer having an appropriate thermal conductivity and a manifold layer for providing fluid to the interface layer, wherein the manifold layer is configured to achieve temperature uniformity in the heat source preferably by cooling interface hot spot regions. A plurality of fluid ports are configured to the heat exchanger such as an inlet port and outlet port, whereby the fluid ports are configured vertically and horizontally. The manifold layer circulates fluid to a predetermined interface hot spot region in the interface layer, wherein the interface hot spot region is associated with the hot spot. The heat exchanger preferably includes an intermediate layer positioned between the interface and manifold layers and optimally channels fluid to the interface hot spot region.

Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.

A coated print bed for a 3D printer having a permanent print-surface coating permanently secured to a print bed substrate plate, having a smooth, planar surface that provides an adhesive interface layer between a first layer of an applied plastic print material and the coated print bed. The coating contains a matrix-forming compound, such as a solvent- or water-based epoxy resin, an adhesive material, and optionally a filler. The user can print a series of print object directly onto the permanent print surface coating of the coated print bed, without having to refresh or refurbish the print surface, such as by applying to the print bed surface a temporary coating such as painter's tape, or a liquid adhesive.

A spoolable composite tube capable of being spooled onto a reel for storage and for use in oil field applications. The spoolable tube exhibits unique anistropic characteristics that provide improved burst and collapse pressures, increased tensile strength, compression strength, and load carrying capacity, while still remaining sufficiently bendable to be spooled onto a reel in an open bore configuration. The spoolable composite tube can include an inner liner, an interface layer, fiber composite layers, a pressure barrier layer, and an outer protective layer. The fiber composite layers can have a unique triaxial braid structure.

An apparatus and method of circulating a heat-absorbing material within a heat exchanger. The apparatus comprises a manifold layer coupled to an interface layer. The manifold layer comprises an inlet manifold and an outlet manifold. The interface layer comprises a plurality of channels that extend from the inlet manifold, toward a heat-exchanging plane, and turn away from the heat-exchanging plane, terminating at the outlet manifold. The plurality of channels are stacked in a plane non-parallel to the heat-exchanging plane. Each of the channels is adjacent to another, thus allowing heat radiated from a heat-generating device to be conducted to a cooling material circulating within the channels, away from the heat-generating device. Preferably, each of the channels has a U-shape or an elongated U-shape.

A microchannel heat exchanger coupled to a heat source and configured for cooling the heat source comprising a first set of fingers for providing fluid at a first temperature to a heat exchange region, wherein fluid in the heat exchange region flows toward a second set of fingers and exits the heat exchanger at a second temperature, wherein each finger is spaced apart from an adjacent finger by an appropriate dimension to minimize pressure drop in the heat exchanger and arranged in parallel. The microchannel heat exchanger includes an interface layer having the heat exchange region. Preferably, a manifold layer includes the first set of fingers and the second set of fingers configured within to cool hot spots in the heat source. Alternatively, the interface layer includes the first set and second set of fingers configured along the heat exchange region.

An interface layer, also referred to as a synchronization-CDS bridge, automatically provides a first set of update information to a Content Directory Service (CDS) regarding any content received by a first media server during a data synchronization process. The interface layer also provides a second set of update information to a synchronization application regarding any content newly added to the first media server subsequent to a last data synchronization. The interface layer discovers the second set of update information provided to the synchronization application from the CDS. The second set of update information is used by the synchronization application to select the newly added content during a next data synchronization.

A magnetic tunnel element that can be used, for example, as part of a read head or a magnetic memory cell, includes a first layer formed from an amorphous material, an amorphous tunnel barrier layer, and an interface layer between the first layer and the tunnel barrier layer. The interface layer is formed from a material that is crystalline when the material is in isolation from both the first layer and the tunnel barrier layer. Alternatively, the thickness of the interface layer is selected so that the interface layer is not crystalline. The first layer is formed from at least one material selected from the group consisting of amorphous ferromagnetic material, amorphous ferrimagnetic materials, and amorphous non-magnetic materials. The interface layer is formed from a material selected from the group consisting of a ferromagnetic material and a ferrimagnetic material.

A flash memory management method for effectively deleting a file and a flash memory system, the flash memory system including: a flash memory; and an interface determining whether a sensed sector write operation instructs a file system to delete a file by examining metadata of the file system and deleting data in the flash memory corresponding to the file if the sensed sector write operation instructs deletion of the file. Accordingly, an interface layer between the flash memory and the file system can prevent unnecessary data from being copied in a future garbage collection process by recognizing a delete operation of the file system and quickly performing a future rewrite operation since actual data blocks are erased in file deletion.