511 results about "Interface layer" patented technology

The invention discloses a photosensitive pixel unit and an image sensor. The photosensitive pixel unit comprises a semiconductor substrate; a charge accumulation electrode, a transmission control electrode, and a signal readout electrode; the dielectric layer covers the charge accumulation electrode, the transmission control electrode and the signal reading electrode and is provided with an opening part; the N-type semiconductor layer is positioned above the dielectric layer, is in ohmic contact with the signal reading electrode through the opening part, and sequentially comprises a nanocrystalline particle layer, a metal oxide semiconductor thin film layer and an interface layer which is arranged between the nanocrystalline particle layer and the metal oxide semiconductor thin film layer and has two-dimensional electron gas characteristics from bottom to top; the photoelectric conversion layer is located above the N-type semiconductor layer; and the top electrode is positioned above the photoelectric conversion layer and is arranged opposite to the charge accumulation electrode, the transmission control electrode and the signal reading electrode.

The invention discloses a flame-retardant PC (polycarbonate) composite material based on high-temperature interface crosslinking and an in-situ reinforcement process thereof. The composite material comprises polycarbonate resin, reinforced fibers with a thermal response interface, a flame-retardant synergist and a processing aid. The core is that a thermal response interface layer and a sacrificial protection layer are sequentially constructed on the surface of the reinforced fiber, the thermal response interface layer is formed by grafting a silane coupling agent containing peroxide bonds through covalent bonds, and the sacrificial protection layer is a low-melting-point coating material. According to the design, the material has the temperature-triggered intelligent response characteristic; in daily processing and use, the protective layer ensures that an interface is stable and the binding force is slowly repaired; under the condition of high-temperature fire, the interface layer is quickly triggered to form carbon through crosslinking, so that the flame-retardant efficiency is remarkably improved, and melt dripping and a candlewick effect are effectively inhibited. The high mechanical strength, the long-acting durability and the intrinsic flame-retardant safety of the material are synchronously realized, and the material is suitable for the high-requirement fields of electronic appliances, new energy automobiles and the like.

A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.

The invention discloses a positive electrode interface layer material for an all-solid-state battery and a preparation method of the positive electrode interface layer material, and relates to the technical field of solid-state batteries. According to the interface layer material provided by the invention, an ion-electron co-conduction network is formed through in-situ polymerization, a cured interface layer with flame-retardant and interface wetting functions is constructed between positive electrode particles and a solid electrolyte, and the cured interface layer comprises the following components: a polymerizable monomer, a flame retardant, an interface wetting agent, a lithium salt, a conductive agent, an initiator and a solvent. According to the material, the polymerizable monomer, the flame retardant and the interface wetting agent are synergistically introduced in a specific manner, so that the thermal safety of the battery is remarkably improved, and meanwhile, the interface contact and lithium ion transmission kinetics between a positive electrode and a solid electrolyte are effectively improved, so that the comprehensive optimization of the safety and the electrochemical performance is realized.

The invention discloses an artificial interface layer, a preparation method thereof and an all-solid-state sodium battery, and belongs to the technical field of electrochemical energy storage. The artificial interface layer is composed of Na3Sb and NaF, and the molar ratio of the Na3Sb to the NaF is 1: 3. The artificial interface layer composed of Na3Sb and NaF is constructed on the surface of the sodium metal negative electrode, so that collaborative optimization of interface chemical stability, ionic conductivity and mechanical strength is realized.

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device includes a plurality of memory cells, each memory cell including: a memory layer; a first selector layer formed in an upper portion or a lower portion of the memory layer to select the memory layer; a second selector layer for selecting a memory layer; and an interface layer disposed between the first selector layer and the second selector layer, in which the first selector layer and the second selector layer include an amorphous silicon layer including one or more dopants selected from the group including Group 13 elements, Group 14 elements, and Group 15 elements of the periodic table, and wherein the interface layer is selected from the group comprising silicon oxide, silicon carbonitride, silicon carbonitride, silicon nitride, tantalum nitride, titanium nitride, aluminum nitride, and hafnium nitride.

The invention provides a vehicle control method which is applied to a middle layer assembly of a vehicle control system, and the middle layer assembly is located between an interface layer and a processing method layer. The method comprises the steps of receiving a request sent by a vehicle from an interface layer; the request at least comprises a first key; the first key is used for pointing to a first control object of the vehicle, and the request is used for representing execution of first processing on the first control object; reading a target function module corresponding to the first key from a plurality of function modules included in the target function library; the plurality of function modules are function modules of a plurality of control objects of the vehicle; and calling a target processing method in the processing method layer based on the target function module to realize first processing on the first control object. According to the scheme, decoupling of the interface layer, the middle layer and the processing method layer is achieved, the method can be used for control over various vehicles, the application scene is wide, the research and development cost is reduced, and expansibility is good.

The invention discloses a method for generating a metal 3D printing supporting structure, and relates to the technical field of additive manufacturing. The method comprises the steps that geometric analysis is conducted on a three-dimensional model of a to-be-printed part, and areas needing to be supported are recognized and classified into a strong supporting area, a weak supporting area and a transition supporting area; different laser scanning parameters are configured for different supporting areas, a supporting main body adopts low-energy density parameters to form a porous structure, a contact interface adopts discrete dot matrix scanning to form weak connection, and a transition layer with gradually-changed parameters is arranged between the supporting main body and the contact interface; a composite supporting structure composed of hexagonal honeycomb units and vertical thin walls is generated; in the printing process, high-frequency micro-vibration is applied to the support to improve powder fluidity, and sweep-frequency vibration is applied to the interface layer to weaken interface bonding; thermal cycle treatment is carried out after printing, and interface automatic cracking is achieved through the difference of thermal expansion coefficients; and finally, support falling is accelerated through resonance frequency vibration. Through the synergistic effect of the scanning parameter gradient, the structure optimization design and the vibration auxiliary technology, the removability of the support is remarkably improved, the material consumption is reduced, and the surface quality of the part is improved.

The invention discloses an interface thickness parameter acquisition method based on a microcosmic full-atom composite model, and belongs to the field of molecular simulation. The method comprises the following steps of: firstly, constructing a periodic model of a polymer A and a periodic model of a polymer B by utilizing MS software, and after the periodic models are combined, obtaining a global energy minimization total-atom composite model through geometric optimization and dynamic equilibrium optimization; finally, atomic concentration distribution data points of the full-atomic composite model are calculated in an MS software Perl script module through the secondary programming technology, an atomic concentration distribution curve is drawn, and smooth processing is conducted; setting a judgment benchmark of the interface thickness of the full-atom composite model, and judging whether the interface thickness exists in the full-atom composite model or not; and defining an interface thickness calculation formula of the full-atom composite model, and calculating the interface thickness of the full-atom composite model with the interface thickness, so as to quickly, efficiently, accurately and quantitatively calculate the thickness result of the interface layer of the polymer composite material. In addition, the method has the advantages of being convenient to operate and the like.

This invention provides a universal interface system and its operation method. The universal interface system includes: an upper-layer application algorithm layer (4-1), configured to call functional modules and corresponding interfaces to complete a technical task; a fine-grained interface layer (4-2), configured to provide an abstract and unified fine-grained interface for the upper-layer application algorithm layer and define the input and output standards of each fine-grained interface; a chip adaptation layer (4-3), configured to carry out mapping between the interface specifications of the fine-grained interface and the hardware capabilities of the lower chip execution layer, and to implement the various functions defined by the fine-grained interface layer; and the chip execution layer (4-4; 4-5), configured to call chip hardware modules to perform hardware acceleration according to the technical task and return the execution results to the upper layer. This invention thus achieves the technical advantage of “one-time development, multi-chip adaptation”.

The invention provides a negative pole piece which comprises a metal layer and a silicon interface layer located on at least one side of the metal layer, the silicon interface layer comprises a material with the general formula of SiOx, x is larger than or equal to 0 and smaller than or equal to 2, and in the thickness direction of the silicon interface layer, the oxygen content of the portion, close to the metal layer, of the silicon interface layer is lower than the oxygen content of the portion, away from the metal layer, of the silicon interface layer. Compared with a metal layer, the silicon interface layer has higher negative electrode potential, formation and growth of dendritic crystals can be inhibited, and improvement of the cycle performance of the battery is facilitated.

The application relates to the fields of material preparation technology and radio frequency devices, in particular to a thin film substrate structure and an acoustic filter. The thin film substrate structure comprises a supporting substrate, an interface layer, an insulating layer and a functional layer; the supporting substrate has opposite first and second surfaces, and the interface layer is located on the second surface; the insulating layer is located on the side surface of the interface layer away from the supporting substrate; the functional layer is located on the side surface of the insulating layer away from the supporting substrate; and the interface layer has at least one of a deep energy level defect and a preset band gap width. The application plays a pinning effect on the Fermi level of the device by the interface layer having at least one of a deep energy level defect and a preset band gap width. The surface local conductance effect of the supporting substrate when working at a high frequency is effectively inhibited, the generation of high-order harmonics is inhibited, and the linearity of the device is optimized.

To provide a multilayer electronic component that offers excellent heat dissipation performance while also possessing superior mechanical strength and equivalent series resistance (ESR) characteristics. [Solution] A stacked electronic component according to one embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer, external electrodes 130 and 140 arranged on the body and connected to the internal electrodes, and interface layers 151 and 152 arranged between the body and the external electrodes, wherein the interface layers include an oxide containing a crystalline conductive metal. A plurality of interface layers are arranged, and the plurality of interface layers are spaced apart from each other in a direction in which the dielectric layer and the internal electrodes are arranged alternately.

The invention provides an MAX phase / alumina layered composite ceramic and an in-situ synthesis preparation method thereof, and the method comprises the following steps: respectively preparing an alumina matrix layer and an MAX phase interface layer through a tape casting method, then alternately laminating the alumina matrix layer and the MAX phase interface layer, and finally carrying out hot pressed sintering to obtain a layered composite ceramic product. According to the invention, the layered composite ceramic which takes aluminum oxide as a matrix and MAX-phase ceramic as an interlayer is prepared through an in-situ synthesis technology, so that the effects of great toughening, strength increase without reduction and high damage tolerance are realized, and the fracture mode is converted from brittle fracture of aluminum oxide ceramic to safe stepped fracture. The strength and toughness of the aluminum oxide ceramic are successfully balanced and synergistically improved, and the industrial problem that strength and toughness cannot be both considered in a traditional aluminum oxide ceramic toughening technology is solved.

The invention discloses a hybrid bonding structure and a semiconductor device. The mixed bonding structure comprises a first dielectric layer, wherein a metal barrier layer and metal are arranged in the first dielectric layer; an insulating barrier layer and metal are arranged in the second dielectric layer; wherein the first dielectric layer and the second dielectric layer are bonded to form a bonding interface layer; the metal in the first dielectric layer is bonded with the metal in the second dielectric layer to form a metal structure; wherein the metal barrier layer is in contact with the insulating barrier layer to form a diffusion barrier structure, and the diffusion barrier structure separates the bonding interface layer. The hybrid bonding structure can improve the performance of the device.

This application belongs to the field of display technology and relates to an optoelectronic device and its fabrication method, as well as a display apparatus. The optoelectronic device includes an anode, a hole functional layer, an active layer, an electron functional layer, and a cathode. The electron functional layer is made of a first core-shell material, the core of which includes a first N-type semiconductor material, and the shell material includes a first carbon material; and / or, a first interface layer is provided between the active layer and the hole functional layer, the first interface layer including a second core-shell material, the core of which includes a first P-type semiconductor material, and the shell material includes a second carbon material; and / or, a second interface layer is provided between the active layer and the electron functional layer, the second interface layer including a third core-shell material, the core of which includes a second N-type semiconductor material, and the shell material includes a third carbon material. The above materials have high hole / electron transport performance and a small contact angle with water, enabling them to absorb water oxygen and preventing water oxygen from entering the light-emitting layer for hydrolysis or oxidation, thereby improving the lifetime and external quantum efficiency of the optoelectronic device.

Embodiments of the present disclosure are a semiconductor device and a method of manufacturing the same, the semiconductor device including: a first channel region and a second channel region disposed over a semiconductor substrate; a gate structure having a longitudinal axis in the first direction and extending across the first channel region and the second channel region, and including an interface layer, a gate dielectric layer, and a gate electrode; first and second epitaxial features between which the first channel region and the gate structure are interposed in a second direction perpendicular to the first direction; and an isolation structure extending between the first channel region and the second channel region. The isolation structure has a first sidewall facing the first channel region, and a portion of the first sidewall between a top of the first channel region and a bottom of the first channel region is covered by a gate dielectric layer and an interface layer.

The invention provides a composite silicon-carbon negative electrode and a preparation method and application thereof, and relates to the technical field of all-solid-state lithium ion batteries, the composite silicon-carbon negative electrode comprises: a silicon-carbon negative electrode matrix; the plurality of independent lithium-loving metal nanoparticles are arranged on the surface of the silicon-carbon negative electrode substrate; and the tough interface layer covers the surface of the silicon-carbon negative electrode substrate provided with the lithium-loving metal nanoparticles. The core of the invention is to provide a substrate modification-interface packaging composite structure, firstly, a discontinuous lithium-loving metal nano island array is created on a silicon carbon negative electrode substrate, and then, a complete tough interface layer is used for packaging and covering the discontinuous lithium-loving metal nano island array. According to the all-solid-state battery, the electrochemical performance of the all-solid-state battery can be effectively improved through the collaborative design of the discontinuous nano island and the tough packaging layer.

The invention relates to an alloy carbon-based interface layer composite negative electrode with high interface stability and a preparation method and application thereof.The alloy carbon-based interface layer composite negative electrode comprises a lithium-loving alloy and a three-dimensional mixed carbon-based interface framework layer arranged on the surface of the lithium-loving alloy, and the three-dimensional mixed carbon-based interface framework layer comprises a one-dimensional carbon fiber material and a zero-dimensional carbon particle material with the mass ratio being 1: 45-1: 4; according to the lithium-loving alloy, a lithium-loving layer is arranged on the surface of metal lithium, the lithium-loving layer accounts for 0.001 wt.%-20.0 wt.% of lithium metal, in the inert argon atmosphere, the three-dimensional mixed carbon-based interface framework layer and the pressed lithium-loving alloy are attached and rolled, and the carbon-based interface is modified to the surface of the lithium-loving alloy. Compared with the prior art, the preparation method has the advantages that huge volume change in negative electrode side long circulation can be slowed down, the problems of overgrowth of dendrites, loss of active lithium and the like are relieved, and the electrochemical performance and safety of the battery are improved.

A microelectronic assembly and a method of forming same. The assembly includes: first and second microelectronic structures; and an interface layer between the two microelectronic structures including dielectric portions in registration with dielectric layers of each of the microelectronic structures, and electrically conductive portions in registration with electrically conductive structures of each of the microelectronic structures, wherein the dielectric portions include an oxide of a metal, and the electrically conductive portions include the metal.

The invention discloses a configurable Modbus protocol analysis and simulation system which comprises a hardware supporting layer, a hardware interface layer, a software core layer, an application interface layer and an application interaction layer from bottom to top. The hardware supporting layer provides hardware resources for the software core layer through the hardware interface layer; the software core layer outputs a processing result to the application interaction layer, the application interaction layer issues a user configuration instruction to the software core layer, and the software core layer and the application interaction layer interact through the application interface layer. The software core layer comprises a configuration module, an analysis module and a simulation module which are mutually connected in pairs; the configuration module generates a configurable file based on the configuration instruction, stores configuration parameters and sends the configuration parameters to the analysis module and the simulation module; the analysis module analyzes the Modbus message based on the configuration parameters and sends an analysis result to the simulation module; and the simulation module executes simulation based on the configuration parameters and the analysis result. The method has the advantages of high configuration flexibility, strong compatibility, rich data type support and the like.

This invention discloses a ceramic-modified C / C composite material with a ZrC-SiC-PyC interface layer and its preparation method, belonging to the technical field of ceramic-modified carbon / carbon composite material preparation. The preparation method is as follows: ZrSi2 powder is introduced into a low-density C / C composite material using the SI method to obtain a low-density C / C composite material containing ZrSi2 powder; the low-density C / C composite material containing ZrSi2 powder is then processed into a low-density C / C composite material with a ZrC-SiC-PyC interface layer using a first RMI method; PyC is deposited onto the low-density C / C composite material with the ZrC-SiC-PyC interface layer using chemical vapor deposition; and then a ceramic-modified C / C composite material with a ZrC-SiC-PyC interface layer is prepared using a second RMI method. This invention combines the SI and RMI methods to prepare a ceramic-modified C / C composite material with a ZrC-SiC-PyC interface layer. Constructing a ceramic interface layer on the carbon fiber surface effectively reduces the erosion of the carbon fiber by the ceramic melt during the RMI preparation of the ceramic-modified C / C composite material.

According to at least one embodiment of the present disclosure, there is provided a capacitor structure including a lower electrode including a first lower electrode and a second lower electrode, an upper electrode, a supporter in contact with the first lower electrode and the second lower electrode, a dielectric layer between the lower electrode and the upper electrode, a lower interface layer between the lower electrode and the dielectric layer, the lower interface layer including a first material that is a conductive material and includes nitrogen (N), and a supporter interface layer between the supporter and the dielectric layer, and the supporter interface layer including a second material, the second material being an insulator and including nitrogen (N).

The embodiment of the invention provides a digital twinning method and device for a satellite optical system, and the method comprises the steps that a telemetering instruction is received by an interface layer in the satellite optical system, a virtual electric control box is a core logic layer in the satellite optical system, and a virtual camera is a unit model layer in the satellite optical system. The interface layer and the core logic layer receive the telemetering instruction and respond to the telemetering instruction with the unit model layer, so that a simulation result responding to the telemetering instruction in the satellite optical system is obtained. By adopting the layered architecture, the interface layer focuses on data interaction, the core logic layer is responsible for instruction processing and logic operation, and the unit model layer focuses on imaging simulation, so that the stability and reliability of the system are enhanced, and a stable and reliable virtual platform support is provided for testing and verification of the satellite optical system.

The application provides a VISA library running method and device based on an ARM embedded platform, and relates to the technical field of testing and measurement, and comprises the following steps: initializing a layered architecture of a VISA library; the layered architecture of the VISA library comprises an application layer, an API interface layer, a core logic layer, a hardware abstraction layer and a driver layer; discovering and establishing a communication session connection with at least one measuring instrument; wherein a session attribute and a preset attribute associated with a data reading operation are included in a session structure body of the communication session; setting at least one preset attribute for the VISA library; sending at least one control command to a target measuring instrument; wherein the target measuring instrument comprises at least one; reading response data for the control command from the target measuring instrument based on the preset attribute and writing the response data into a buffer; and closing the communication session established with the at least one measuring instrument, so as to alleviate the technical problem that the VISA library is difficult to meet the requirements of an embedded application scenario in high performance.

The invention discloses a high-chromium polyhedral grinding medium and a preparation method thereof, and belongs to the technical field of material processing. A strengthening area is limited in a spherical crown body with the vertex as the center and the radius not larger than 0.5 mm, a WC-Co particle array gradient strengthening structure is constructed in the area, and the concentration of the WC-Co particle array gradient strengthening structure is in exponential attenuation distribution C (x) = C0.e-0. 2x from the vertex center to the edge direction. The diameter of the WC-Co particles is controlled within the range of 0.05-0.1 mm, and the surfaces of the WC-Co particles are wrapped with transition interface layers which are composed of Cr3C2 particles and have the thickness of 0.02-0.05 mm. The problem of fracture caused by vertex stress concentration is effectively solved, the wear resistance and the service life of the grinding medium are remarkably improved, meanwhile, interface stripping failure caused by a strengthening structure is avoided, the method is compatible with an existing high-chromium iron process, the industrialization implementation cost is increased limitedly, and the method is suitable for industrial production. And a more reliable and efficient grinding medium solution is provided for an industrial ball milling system.

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of cell devices. The solar cell provided by the invention comprises an anode, a hole transport layer, a perovskite layer, an electron transport layer, an interface layer and a cathode which are stacked in sequence. The interface layer containing Cr2O3 and Cr is introduced between the electron transport layer and the cathode, so that diffusion of metal ions can be effectively prevented, interface bonding between the electrode and the electron transport layer can be enhanced, a buffer effect is provided for volume expansion of other functional layer materials under a photo-thermal condition, and the thermal stability of a battery device is improved. And meanwhile, the specific element proportion in the interface layer can ensure that the interface layer has excellent electron transmission performance, so that the photoelectric conversion effect of the interface layer is ensured.

The invention discloses a self-repairing heat dissipation wheel based on a double-response intelligent material and a preparation process thereof, the wheel adopts a three-layer gradient composite structure and a double-trigger control system, and the three-layer structure comprises a self-repairing layer, a transition interface layer and a heat dissipation layer from outside to inside; the surface of the self-repairing layer is provided with a diamond dot matrix, and the inner side of the self-repairing layer is provided with a heating sheet; the transition interface layer is formed by explosive welding of titanium and aluminum; the heat dissipation layer comprises an aluminum alloy base body, a composite phase change material, a directional heat dissipation micro-channel, heat dissipation fins and a micro electromagnetic valve. The double-trigger system comprises a sensing module, a control module and a power supply module. The preparation technology comprises the steps of alloy preparation, explosive welding, heat dissipation structure machining, vacuum diffusion welding, phase change material vacuum infusion, function integration and the like. Micro-damage self-repairing and efficient heat dissipation are achieved, it is guaranteed that the structure is stable and matched with working conditions, the service life of wheels is prolonged, driving safety is improved, and light weight and high strength are both considered.

The application provides an interface layer design implementation method and device based on token authentication. The method comprises the following steps: determining application information of application systems requiring to be managed and initialized to access; providing a user synchronization interface to each of the application systems, and synchronizing user information between each of the application systems; determining interface information provided by each of the application systems to the outside and setting access permissions; when a first application system in each of the application systems accesses a second application system, verifying the access based on a token, and after the verification is passed, obtaining data according to a URL obtained from the application information of the initialized access. The scheme of the embodiment of the application provides a lightweight interface layer design implementation method based on token authentication, can publish an interface for calling by other systems, realizes safe calling of the interface, and guarantees data security.