163 results about "Coplanar waveguide" patented technology

The invention provides a wafer-level cluster coplanar waveguide electrode array, a preparation method and a test system. The coplanar waveguide electrode array comprises an insulating substrate and a plurality of coplanar waveguide electrodes which are arranged in a periodic array; each coplanar waveguide electrode comprises a central transmission section, a probe pad and a gradual transition section; through the design of the central transmission section and the gradual transition section of the coplanar waveguide configuration, the whole-course impedance matching from an external probe to a nano gap is ensured, so that nanosecond and even picosecond-level ultrafast electric pulses can be transmitted to the cluster function unit with extremely low loss and distortion; through overlay and multi-step photoetching and in combination with a negative feedback electromigration technology, a nano gap is manufactured with high success rate, and a cluster function unit is integrated; besides, a test system integrating a coplanar waveguide electrode array and a high-end test instrument is used for exciting and capturing the ultrafast response of a cluster functional unit, and the single write-in time of a cluster device is directly pushed to a subnanosecond level (lt;

An antenna package includes an antenna device and a circuit board bonded to the antenna device. The circuit board includes a core layer, a feeding line formed on the core layer and bonded to the antenna device, and a CPW ground formed on the core layer to be physically separated from the feeding line and the antenna device.

An antenna module implemented as a multi-layered package includes: a printed circuit board (PCB) having a plurality of layers; a radio frequency integrated circuit (RFIC) disposed on a first surface among outermost surfaces of the PCB; a first array antenna disposed on a second surface, perpendicular to the first surface, among the outermost surfaces of the PCB; a second array antenna disposed on a third surface, perpendicular to the first and second surfaces, among the outermost surfaces of the PCB; and a third array antenna disposed on a fourth surface, perpendicular to the second and third surfaces, among the outermost surfaces of the PCB. First to third signal lines connected to the first to third array antennas form first to third coplanar waveguide structures in which first to third ground regions are formed, respectively.

The invention provides a coaxial-coplanar waveguide broadband matching structure for a millimeter wave frequency band and an installation method. The coaxial-coplanar waveguide broadband matching structure for the millimeter wave frequency band comprises a coaxial plane center line structure, a coaxial plane coplanar gradient line structure and a coaxial plane coplanar waveguide structure which are sequentially arranged in the millimeter wave propagation direction, and the coaxial plane center line structure is fixedly connected with the coaxial plane coplanar gradient line structure. The coaxial plane coplanar tapered line structure is fixedly connected with the coaxial plane coplanar waveguide structure; the coaxial plane center line structure is used for forming a sheet-shaped axisymmetric field force line; the coaxial plane coplanar gradual change line structure is used for realizing gradual change of a field force line; the coaxial plane coplanar waveguide structure is used for forming a specific field force line, the specific field force line enables an electric field to be emitted to the plane grounding layers on the two sides, and the magnetic field shrinks. According to the coaxial-coplanar waveguide broadband matching structure for the millimeter wave frequency band, signal reflection caused by interconnection of the coaxial structure and the coplanar waveguide can be reduced, and impedance mutation is avoided.

A millimeter wave end-fire dual-polarized antenna array disclosed by the present invention comprises two dual-polarized units, each dual-polarized unit comprises a vertical polarization unit and a horizontal polarization unit, the vertical polarization unit is composed of a substrate integrated waveguide, a first metal patch, a second metal patch and a first metal through hole, and the horizontal polarization unit is composed of a second metal patch and a second metal through hole. The horizontal polarization unit is composed of a substrate integrated coaxial line, a dipole and a third metal patch; the rear end of the vertical polarization unit is connected with the substrate integrated waveguide power divider; the substrate integrated waveguide power divider is connected with the substrate integrated waveguide grounding coplanar waveguide; the rear end of the horizontal polarization unit is connected with the substrate integrated coaxial line power divider; the substrate integrated coaxial line power divider is connected with the substrate integrated coaxial line grounding coplanar waveguide; the grounding coplanar waveguide is connected to the coaxial joint for antenna excitation. The antenna has the characteristics of wide working bandwidth, compact structure, stable radiation performance and the like, and has a wide application prospect in millimeter wave wireless communication.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

This invention relates to a microwave multi-mode flow measurement method for horizontal oil-water two-phase flow, employing a combination of a coplanar waveguide-excited helical microwave sensor and a dual-coaxial microstrip antenna sensing unit. The method includes: constructing a relationship between the mixing dielectric constant and water holdup of the horizontal oil-water two-phase flow based on the phase output signal of the coplanar waveguide-excited helical microwave sensor, thereby obtaining formulas for predicting water holdup and oil holdup using the dielectric constant of the oil-water mixture in a horizontal pipe; utilizing the upstream and downstream phase output signals of the dual-coaxial microstrip antenna sensing unit; constructing a correlation velocity model for the horizontal oil-water two-phase flow under different operating conditions based on experimental data, obtaining the functional relationship between the correlation velocity of the mixed fluid in the pipe and the mixing velocity and the phase-separated apparent velocity; and constructing a drift model for the horizontal oil-water two-phase flow under different flow patterns, obtaining functions relating the mixing velocity, the oil phase apparent velocity, and the oil holdup. This invention offers high measurement accuracy.

The embodiment of the present application provides a kind of single-layer planar dipole antenna, wherein the antenna is applied to intelligent vehicle technical field, wherein the single-layer planar dipole antenna includes: base material, planar dipole antenna, planar balun, differential double-wire transmission line and band ground coplanar waveguide;Wherein, planar dipole antenna, planar balun, differential double-wire transmission line and band ground coplanar waveguide are arranged on the same layer of base material surface;Band ground coplanar waveguide includes center signal conductor and left and right two side reference ground, two metal arms of planar balun are connected to left and right two side reference ground of band ground coplanar waveguide respectively, and the upper end of differential double-wire transmission line is respectively connected to two radiation arms of planar dipole antenna, while the lower end of differential double-wire transmission line two transmission lines are respectively connected to one of center signal conductor and left and right two side reference ground of band ground coplanar waveguide.The embodiment of the present application can realize the integrated molding of antenna by the structure of single surface arrangement antenna, and reduce the integration difficulty of antenna.

The invention discloses a steep transition type artificial surface plasmon low-pass filter based on a spur line structure, and belongs to the technical field of low-pass filters, the steep transition type artificial surface plasmon low-pass filter comprises a dielectric substrate, a coplanar waveguide is arranged on the upper surface of the dielectric substrate, and a spur line unit array is arranged on the lower surface of the dielectric substrate; the coplanar waveguide comprises a center conductor belt and grounding belts symmetrically distributed on the two sides of the center conductor belt, L-shaped groove unit arrays are etched on the grounding belts, the L-shaped groove unit arrays are distributed in the length direction of the coplanar waveguide, and each L-shaped groove unit array comprises a filtering unit and transition units symmetrically arranged at the two ends of the filtering unit. The spur line unit array is aligned with the center of the filtering unit on a projection plane perpendicular to the wave propagation direction. According to the steep transition type artificial surface plasmon low-pass filter based on the spur line structure, adjustable dispersion cut-off frequency and sharp transition from a pass band to a stop band are achieved, and meanwhile the structure is simple and miniaturized.

The invention relates to an LTCC (Low Temperature Co-Fired Ceramic)-based switch type band-pass filter. The filter comprises a multi-layer LTCC substrate, a resonator, a switching circuit and a control circuit are packaged into a whole through a three-dimensional integration technology, and the multi-layer LTCC substrate is formed by vertically stacking and sintering a plurality of layers of ceramic green sheets; the number of the resonators is at least two, the adjacent resonators realize electromagnetic coupling through a rectangular coupling window, and the tail ends of the resonators are connected to a bottom layer grounding plane through metalized through holes; the switching circuit comprises a plurality of PIN diodes, the diodes are embedded between the fourth layer and the fifth layer of the LTCC by flip-chip bonding, the anodes are connected with the control line through through holes, and the cathodes are directly grounded; the control circuit comprises a coplanar waveguide and a high-frequency choking coil, and the coplanar waveguide is connected with the high-frequency choking coil in series. The switch and the filter are integrally packaged, and the size is smaller than 5 mm * 3 mm * 1 mm; the switching state insertion loss is less than or equal to 2dB, and the turn-off isolation is greater than or equal to 30dB; lTCC packaging is resistant to high temperature and vibration, and is suitable for severe environments.

The invention provides a third harmonic suppression film microstrip filter based on a mixed structure. Comprising a substrate, a pair of coplanar waveguide feeder lines used for being connected with an external circuit and playing a role in impedance matching, and a plurality of interdigital resonators used for generating passband characteristics of the filter, the hairpin resonator is used for generating a transmission zero point at the low end of the filter to improve low-end stop-band suppression, the 1 / 4 wavelength open-circuit lines are used for suppressing third harmonics of the filter, and the pair of coplanar waveguide feeder lines, the interdigital resonators, the hairpin resonator and the 1 / 4 wavelength open-circuit lines are all laid on the substrate. The plurality of interdigital resonators are located between the pair of coplanar waveguide feeders, the hairpin resonator is located between the plurality of interdigital resonators, the pair of coplanar waveguide feeders is connected with the interdigital resonators at two sides of the plurality of interdigital resonators, and the plurality of 1 / 4 wavelength open-circuit lines are connected with the pair of coplanar waveguide feeders in parallel.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The invention provides a liquid crystal antenna, a liquid crystal phased array and electronic equipment, and relates to the technical field of liquid crystal antennas. The liquid crystal antenna comprises a waveguide, a coplanar waveguide coupling layer, a liquid crystal phase shift layer and an antenna radiation layer which are sequentially stacked in the transmission direction; the waveguide is used for transmitting a TE mode wave, the coplanar waveguide coupling layer is used for converting the TE mode wave into at least one TEM mode wave, the liquid crystal phase shift layer is used for converting the TEM mode wave into a target wave beam in a phase shift manner, and the antenna radiation layer is used for outputting the target wave beam in a radiation manner. Therefore, signal interaction is carried out between the waveguide and the liquid crystal phase shifting layer in a mode that the coplanar waveguide coupling layer transmits the TEM mode waves, so that the purpose of signal interaction between the waveguide and the liquid crystal phase shifting layer is achieved, and technical support is provided for implementation of the liquid crystal antenna. The liquid crystal antenna is simple in structure, the liquid crystal material has the properties of low cost and low power consumption, and the cost and the power consumption of the liquid crystal phased array adopting the liquid crystal antenna are reduced.

The invention relates to a D-band high-integration multi-channel transceiver assembly, the upper surface of a feed unit is provided with a plurality of bonding pad arrays used for flip-chip bonding connection with a radio frequency chip, and each bonding pad array corresponds to a transmitting / receiving channel and is connected to a coplanar waveguide port starting from the layer; the CPWG-SIW transition structure starts from a coplanar waveguide port, and signals are transmitted to a port of the SIW first vertical transition structure in the same layer; the SIW first vertical transition structure starts from a port of the SIW first vertical transition structure, a signal is transmitted downwards to the SIW second transmission line through the SIW first vertical transition structure, after phase adjustment of the SIW second transmission line, the signal is transmitted upwards to the SIW third transmission line, the SIW third transmission line ends in an SIW resonant cavity of the antenna unit, signal energy excites a resonant field in the SIW resonant cavity, and the signal energy is transmitted to the SIW second transmission line through the SIW first vertical transition structure. And the radiation is effectively radiated into the free space through the radiation gap. The targets of feed network broadband matching, low signal transmission loss, low antenna radiation sidelobe and high gain are achieved.

The invention discloses a heat through hole microstrip coplanar waveguide transition structure and a terahertz waveguide probe chip. The transition structure comprises a dielectric substrate, a microstrip signal line, a CPW signal line, a heat through hole and a grounding layer. The microstrip signal line is located on the upper layer of the dielectric substrate. The CPW signal line is located on the lower layer of the dielectric substrate. The heat through hole vertically penetrates through the dielectric substrate, the center of the end part of the micro-strip signal line coincides with the center of the bottom of the heat through hole, and the micro-strip signal line penetrates through the heat through hole and is connected with the CPW signal line; the grounding layer is located on the lower surface of the dielectric substrate, and grounding strips on the two sides of the CPW signal line extend towards the edge and are fused with the grounding layer; the probe chip comprises a signal receiving module, a filtering module, a heat through hole microstrip-CPW transition module and a wafer chip contact module. The microstrip coplanar waveguide transition structure provided by the invention has grounding continuity, low transmission loss and high-frequency interference suppression capability, and provides a solution for performance optimization of a terahertz high-frequency test probe chip.

The invention provides a high-linearity integrated two-stage interference Mach-Zehnder modulator. The high-linearity integrated two-stage interference Mach-Zehnder modulator comprises a first-stage interference modulation unit and a second-stage interference modulation unit, the first-stage interference modulation unit comprises an adjustable beam splitter, a first coplanar waveguide traveling wave electrode, a first direct-current electrode, a second direct-current electrode and a first equal-ratio beam combiner; the first direct current electrode is thermally coupled to the adjustable beam splitter, and the second direct current electrode is thermally coupled to an output optical waveguide branch of the adjustable beam splitter; the second-stage interference modulation unit comprises an equal-ratio beam splitter, a second coplanar waveguide traveling wave electrode, a third direct-current electrode and a second equal-ratio beam combiner; the third direct-current electrode is thermally coupled to an output optical waveguide branch of the equal-ratio beam splitter; by adjusting the splitting ratio of the adjustable beam splitter and adjusting the first direct-current electrode, the second direct-current electrode and the third direct-current electrode, secondary and tertiary nonlinear distortion components in the output signal of the second equal-ratio beam combiner destructively interfere with each other.

The application relates to a kind of foldable band-pass filters based on polyimide flexible substrate.The filter adopts coplanar waveguide structure, and is prepared using self-assembly technology.It is tested that the filter center frequency is 2.5 GHz, the relative bandwidth is 15.9%, the minimum insertion loss is 0.71 dB, and the in-band return loss is greater than 20 dB.The performance of the filter is basically consistent in flat, curved and folded states.The flexible filter prepared using the self-assembly technology is expected to become one of the components of future flexible communication systems.

The application discloses a sun-cured tobacco distillation processing technology method, and relates to the technical field of tobacco processing, in particular to a sun-cured tobacco distillation processing technology method.The application constructs a mapping relationship between raw material dielectric fingerprints and thermal response characteristics, combines with a coplanar waveguide sensor array to collect data in real time, uses a neural network to predict the thermal release starting temperature of key aroma components, dynamically allocates radio frequency heating parameters, realizes a gradient heating process including low-frequency uniform preheating, medium-frequency selective excitation and high-frequency local focusing, and effectively improves the recovery rate of target aroma components and the retention rate of heat-sensitive components.The application has beneficial effects such as online self-adaptive regulation and control, high extraction efficiency and continuous model optimization.The application constructs a dielectric fingerprint-thermal response characteristic correlation model, realizes the regulation and control of a heating strategy driven by the inherent physical properties of raw materials, significantly improves the scientificity and accuracy of process control, automatically adapts an optimal thermal treatment path without manual intervention, and greatly improves batch consistency and target component recovery stability.

The antenna apparatus includes an antenna substrate having a first surface and an opposing second surface with an antenna ground plane on the second surface. An antenna element is on the first surface of the antenna substrate. A first RF component is attached to the second surface of the antenna substrate and includes RF circuitry for conditioning signals communicated with the antenna element. A second RF component is attached to the second surface of the antenna substrate. A coplanar waveguide (CPW) interconnect couples the first RF component to the second RF component and includes a center conductor and first and second ground conductors on either side of the center conductor. The center conductor has a profile within an opening in the antenna ground plane.

The invention discloses a coplanar waveguide feed-based T-shaped ultra-wideband transparent antenna and a design method thereof, and belongs to the technical field of ultra-wideband transparent antennae, the coplanar waveguide feed-based T-shaped ultra-wideband transparent antenna comprises a transparent dielectric substrate, and a coplanar waveguide feed structure, a radiation unit and a grounding plate structure are integrated on the same surface of the transparent dielectric substrate; the radiation unit is a T-shaped composite radiation patch; the grounding plate structure comprises two L-shaped windows, and the L-shaped windows are formed in the large-area grounding plane; and the two L-shaped windows are symmetrically distributed about the central longitudinal axis of the antenna and form partial projection overlapping with the T-shaped composite radiation patch. Through the collaborative design of the specific T-shaped composite radiation patch and the symmetrical L-shaped window, a plurality of resonant modes are effectively excited and deeply fused, so that the bandwidth limitation of the transparent antenna is overcome, and a key component is provided for a transparent integrated communication terminal; the whole structure is compact, the transparency is high, and stable and efficient ultra-wideband work can be achieved within the frequency band ranging from 4.7 GHz to 7.45 GHz.

The invention discloses a millimeter wave ultra-wideband substrate integrated coaxial line antenna array based on a laminated metasurface. The ultra-wideband antenna array comprises a coplanar waveguide-to-substrate integrated coaxial line switching structure, a one-to-eight power divider based on a substrate integrated coaxial line structure, a butterfly coupling slot and a laminated metasurface antenna, after being fed in by the coplanar waveguide, energy is transmitted to the substrate integrated coaxial line power divider through the blind hole structure, and is uniformly distributed to eight channels in the substrate integrated coaxial line power divider; and then, the energy is coupled and fed to the laminated metasurface antenna through the coupling slot. The antenna can stably work in the frequency range of 15.84 GHz-49.15 GHz, the return loss (S11) is always lower than 10 dB, and the corresponding relative bandwidth is 102.5%. In a target working frequency band, the maximum peak gain of the antenna can reach 18.58 dBi, and the antenna has excellent ultra-wideband characteristics and good radiation performance.

The application discloses a microwave power sensor with high overload level and a control method thereof. The sensor is composed of a substrate, a coplanar waveguide transmission line, a cantilever beam, a preset anchor point and a capacitor plate. The preset anchor point is arranged between the fixed anchor point of the cantilever beam and the coplanar waveguide transmission line, and the capacitor plate is arranged below the cantilever beam and is arranged on the two sides of the coplanar waveguide transmission line with the preset anchor point. An output end is connected with the capacitor plate for detecting the capacitance. When the microwave signal enters, the capacitance changes, and the power of the microwave signal can be indirectly obtained by measuring the change value. The sensor adopts a variable-length cantilever beam structure, overcomes the problem that the overload power is too small due to the improvement of the sensitivity of the traditional cantilever beam structure, greatly improves the overload power of the sensor, expands the range of the sensor, and due to the increase of the anchor point, the cantilever beam can be protected to a certain extent to avoid the structural collapse caused by the excessive input power.

A variable temperature load (VTL) or noise source including a grounded coplanar waveguide (GCPW) comprising a first metallization patterned on a fused quartz substrate, the first metallization comprising a first end for connecting to a coaxial connector and a second end for connecting to a coplanar waveguide (CPW); the CPW coupled to a 50 ohm termination and comprising a second metallization patterned on a top surface of a crystal quartz substrate; a temperature sensing diode thermally coupled to the crystal quartz substrate and the second metallization; and a heater resistor coupled to the crystal quartz substrate via contact metallization.

A coplanar waveguide (CPW) structure on a micro-electromechanical system (MEMS) device may comprise a glass device substrate that hosts a MEMS component on a first surface of the glass device substrate. The glass device substrate may have an associated set of metal layers that are used for fabrication of the MEMS component. The CPW structure may further comprise a glass cap having a top metal layer and a bottom metal layer. The CPW structure may further comprise a CPW signal path on the first surface of the glass device substrate, and a CPW ground plane on the first surface of the glass device substrate along a side of the CPW signal path. The CPW ground plane may comprise the bottom metal layer of the glass cap and at least one metal layer of the set of metal layers that are used for fabrication of the at least one MEMS component.

A grounded coplanar waveguide (101) is configured from a laminate provided with a plurality of laminated insulator layers (11, 12, 13) and a conductor layer that is formed by being joined to a surface extending along the insulator layers (11, 13). The conductor layer includes a reference ground conductor layer (21), a signal line conductor layer (23) that overlaps the reference ground conductor layer (21) when the laminate is viewed in the lamination direction, and a side ground conductor layer (22) that extends along the extension direction of the signal line conductor layer (23) on the side of the signal line conductor layer (23) when the laminate is viewed in the lamination direction. One surface and the other surface of the conductor layer have different surface roughness. The surface of the signal line conductor layer (23) having the lower surface roughness faces the reference ground conductor layer (21). The surface of the side ground conductor layer (22) having the lower surface roughness does not face the reference ground conductor layer (21).

The invention provides an electro-optical modulation structure and a silicon-based modulator thereof. The electro-optical modulation structure comprises a symmetric coplanar waveguide electrode structure layer, a bottom metal layer and a PN junction modulation layer, the bottom metal layer is arranged between the symmetric coplanar waveguide electrode structure layer and the PN junction modulation layer, the symmetric coplanar waveguide electrode structure layer is electrically connected with the bottom metal layer, and the bottom metal layer is electrically connected with the PN junction modulation layer; the symmetrical coplanar waveguide electrode structure layer is used for receiving a target differential electric signal and transmitting the target differential electric signal to the PN junction modulation layer through the bottom metal layer; the bottom metal layer is used for forming a hyperplasia capacitor which is connected in series with an equivalent capacitor of the PN junction modulation layer with the symmetric coplanar waveguide electrode structure layer or the PN junction modulation layer so as to reduce the transmission loss of a target differential electric signal; the PN junction modulation layer is used for adjusting the waveguide refractive index based on the target differential electric signal, and the adjusted waveguide refractive index is used for carrying out phase modulation on an optical signal needing to be modulated.

The application discloses a superconducting quantum capacity detector with large saturated power, which comprises a reference ground, a coplanar waveguide transmission line, a superconducting microwave resonator based on a tantalum film and a single Cooper pair box based on aluminum, the superconducting microwave resonator comprises a double helix inductor and an interdigital capacitor, the single Cooper pair box is connected to the interdigital capacitor through aluminum metal wires, the single Cooper pair box and the double helix inductor are located on the same side of the interdigital capacitor, and the single Cooper pair box is located above the double helix inductor, so that the detector unit is more compact, the space utilization is increased, and the number of pixels of a multi-pixel focal plane detector array is increased; the gate capacitor is designed in the shape of a tuning fork, compared with an existing parallel wire structure, double capacitance values can be obtained without increasing the volume of a superconducting island, the smaller the volume of the superconducting island is, the more significant the quantum capacity effect of the detector is, and the more obvious the response is, the larger the gate capacitor is, and the larger the saturated power of the detector is, so that the saturated power can be increased without losing sensitivity.

The utility model discloses a punching and grounding coplanar waveguide structure suitable for synchrotron radiation X-ray measurement. The punching and grounding coplanar waveguide structure comprises a dielectric substrate, a first metal surface layer and a second metal surface layer, wherein the first metal surface layer and the second metal surface layer are respectively positioned on the upper surface and the lower surface of the dielectric substrate; a coplanar waveguide signal conductor is arranged in the first metal surface layer; a non-metal through hole is formed in the middle of the dielectric substrate, and a plurality of metalized through holes for connecting the first metal surface layer and the second metal surface layer are formed in the periphery of the dielectric substrate; one end of the coplanar waveguide signal conductor is in direct short-circuit connection with the first metal surface layer to form a microwave magnetic field stagnation point, and the other end is separated from the first metal surface layer through a gap. According to the utility model, through the design of the coplanar waveguide signal conductor of which the single end is directly short-circuited and grounded and the non-metal through hole close to a microwave magnetic field stationary point, excellent microwave magnetic field stability is realized in a broadband range, the microwave magnetic field intensity is obviously enhanced, and the sensitivity and the resolution of synchrotron radiation X-ray measurement are improved.

The invention discloses an ultra-wide beam antenna based on multi-magnetic-current superposition, and belongs to the field of microwave communication. The technical problems that an existing wide-beam antenna is limited in beam coverage range, and vertical polarization and end radiation cannot be considered at the same time are solved. The antenna comprises a top-layer metal structure, a dielectric substrate, a bottom-layer metal structure and a metalized through hole which are stacked in sequence, and the antenna is integrally in bilateral symmetry and integrates a single-ended short-circuit double-sided resonator, a double-ended open-circuit double-sided resonator, a pair of double-ended short-circuit double-sided strip-shaped resonators and a grounded coplanar waveguide transmission line. Through feed excitation of the grounding coplanar waveguide transmission line, the three resonators respectively generate clockwise semicircular magnetic current, front and back bidirectional semicircular magnetic current and vertical magnetic current, and superposing of multiple magnetic currents realizes ultra-wide wave beam vertical polarization end radiation. The antenna has the advantage of extremely wide beam width, and can give consideration to both vertical polarization and end radiation.

This invention discloses a nested ferrite switch based on a composite magnetic circuit, belonging to the field of microwave device technology. It includes a central ferrite rod (1), an insulating dielectric sleeve (2), an excitation coil (3), and a dielectric substrate (5). A coplanar waveguide transmission line (6) is provided on the dielectric substrate (5). The central ferrite rod (1) is embedded in the central junction of the coplanar waveguide. A soft magnetic metal yoke (4) with a magnetic flux density of 2 to 5 times the saturation magnetization of the ferrite is provided outside the central ferrite rod (1). This invention uses a coplanar waveguide and a special magnetic yoke design for the ferrite switch, which can achieve the advantages of high power capacity and wide bandwidth. Through simulation design, the relative bandwidth of the ferrite switch designed with this structure can reach more than 15%.