281 results about "Coplanar waveguide" patented technology

The invention provides a wafer-level cluster coplanar waveguide electrode array, a preparation method and a test system. The coplanar waveguide electrode array comprises an insulating substrate and a plurality of coplanar waveguide electrodes which are arranged in a periodic array; each coplanar waveguide electrode comprises a central transmission section, a probe pad and a gradual transition section; through the design of the central transmission section and the gradual transition section of the coplanar waveguide configuration, the whole-course impedance matching from an external probe to a nano gap is ensured, so that nanosecond and even picosecond-level ultrafast electric pulses can be transmitted to the cluster function unit with extremely low loss and distortion; through overlay and multi-step photoetching and in combination with a negative feedback electromigration technology, a nano gap is manufactured with high success rate, and a cluster function unit is integrated; besides, a test system integrating a coplanar waveguide electrode array and a high-end test instrument is used for exciting and capturing the ultrafast response of a cluster functional unit, and the single write-in time of a cluster device is directly pushed to a subnanosecond level (lt;

The invention provides a grounding coplanar waveguide to coaxial interconnection structure radiation field analytical model construction method, and belongs to the technical field of system packaging, and the method comprises the steps: according to the structure of the upper half plane of a grounding coplanar waveguide and the characteristics that the current of the upper half plane and the current of the lower half plane are equal in amplitude and reverse in direction; obtaining an electric field model, a magnetic field model and a directional diagram model of the grounding coplanar waveguide far region radiation field; regarding the similar axes as a plurality of antenna arrays, and obtaining an electric field model, a magnetic field model and a directional diagram of a similar axis far-region radiation field; and superposing the electric field model, the magnetic field model and the directional diagram of the variable grounding coplanar waveguide and the quasi-coaxial far region radiation field to obtain a grounding coplanar waveguide-to-quasi-coaxial radiation analysis model. The invention aims to solve the problem that a radiation model of a grounding coplanar waveguide-to-similar coaxial interconnection structure does not exist when the electromagnetic radiation characteristic between interconnection lines of a high-density packaging body is researched at present.

The invention relates to an electro-optical Mach-Zehnder modulator (1) comprising an input divider, first and second main waveguides (10p, 20p), and an output combiner (3). It also includes a first coplanar RF line (30) associated with the first main waveguide (10p). Finally, it includes a first additional waveguide (10a), not coupled to the input divider (2) and the output combiner (3), and having a positioning relative to a central track (33), a dimensioning and a doping profile symmetrical to those of the first main waveguide (10p), with respect to a plane of symmetry (Ps), orthogonal to the main plane (XY), parallel to the first main (10p) and additional (10a) waveguides, and passing through a center of the central track (33).

An antenna package includes an antenna device and a circuit board bonded to the antenna device. The circuit board includes a core layer, a feeding line formed on the core layer and bonded to the antenna device, and a CPW ground formed on the core layer to be physically separated from the feeding line and the antenna device.

The invention discloses an on-chip fully-integrated optical circulator based on phase modulation. The on-chip fully-integrated optical circulator comprises a substrate, a buried oxide layer, an optical waveguide layer, an upper cladding and a metal layer used for manufacturing metal electrodes, the substrate, the buried oxide layer, the optical waveguide layer, the upper cladding and the metal layer are stacked, the optical waveguide layer comprises two input / output optical waveguide groups, a four-port resonant cavity and two metal electrode pairs, and the metal layer comprises four modulation areas; four ports of the resonant cavity are respectively connected with four interfaces of the modulation area, each input / output optical waveguide group is connected by a bent optical waveguide and coupled to the resonant cavity, the middle of the metal electrode pair is bent to form a coplanar waveguide electrode, and the middle of each two ends of the modulation area is connected by the coplanar waveguide electrode. The fully-integrated optical circulator is realized under the silicon-based substrate for the first time, is compatible with current mainstream optical integration platforms such as SOI, LNOI and LTOI, and can be widely applied to large-scale photonic integrated chips, such as the fields of optical communication, optical sensing, on-chip optical interconnection and the like.

An antenna module implemented as a multi-layered package includes: a printed circuit board (PCB) having a plurality of layers; a radio frequency integrated circuit (RFIC) disposed on a first surface among outermost surfaces of the PCB; a first array antenna disposed on a second surface, perpendicular to the first surface, among the outermost surfaces of the PCB; a second array antenna disposed on a third surface, perpendicular to the first and second surfaces, among the outermost surfaces of the PCB; and a third array antenna disposed on a fourth surface, perpendicular to the second and third surfaces, among the outermost surfaces of the PCB. First to third signal lines connected to the first to third array antennas form first to third coplanar waveguide structures in which first to third ground regions are formed, respectively.

The invention discloses a space-time modulation filtering circulator based on a substrate integrated waveguide, which consists of a top metal patch, a dielectric substrate, a bottom metal floor, a large metalized through hole and a small metalized through hole, and comprises a rectangular SIW cavity I, a rectangular SIW cavity II, a rectangular SIW cavity III, a pentagonal SIW cavity I, a pentagonal SIW cavity II, a pentagonal SIW cavity III and a circulator central junction, the rectangular SIW cavities are traditional SIW cavities resonating in a fundamental mode, and the pentagonal SIW cavities are space-time modulation SIW cavities; the pentagonal SIW cavity I, the pentagonal SIW cavity II and the pentagonal SIW cavity III are coupled and cascaded through a circulator central junction; the rectangular SIW cavities I, II and III are cascaded with the pentagonal SIW cavities I, II and III in a magnetic coupling mode; the rectangular SIW cavity I, the rectangular SIW cavity II and the rectangular SIW cavity III are fed by the coplanar waveguide transmission line I, the coplanar waveguide transmission line II and the coplanar waveguide transmission line III; according to the space-time modulation SIW filtering circulator provided by the invention, ferrite materials are not needed, the circulator function is realized by adopting three tuning elements, the design complexity of the space-time modulation circulator is reduced, and the frequency selectivity is improved.

The invention provides an ultra wide band millimeter wave transition structure based on gold wire bonding, and relates to the technical field of millimeter wave chip packaging, and the transition structure comprises a substrate, a rectangular cavity, a chip, a parallel gold wire connection structure, a stepped grounding coplanar waveguide GCPW matching structure, and a plurality of blind holes. The substrate comprises a top dielectric layer, a middle metal layer and a bottom metal layer, the rectangular cavity is arranged on the top dielectric layer; the chip is fixed in the rectangular cavity; the parallel gold wire connecting structure is used for connecting the chip and the stepped grounding coplanar waveguide GCPW matching structure; and the plurality of blind holes vertically penetrate through the substrate, are positioned in an area right below the edge of the rectangular cavity and gold wire bonding, are connected with the middle metal layer and the bottom metal layer, and are used for suppressing self-excited oscillation. According to the method provided by the invention, the transition from the chip to the substrate with the average loss lower than 0.28 dB is realized within the frequency band of 30-100GHz.

An antenna structure, printed circuit, and radar sensor chip are disclosed. The antenna structure includes: a coplanar waveguide feeding structure for providing electromagnetic wave signals, and a substrate integrated waveguide resonant cavity for radiating electromagnetic wave signals. The substrate integrated waveguide resonant cavity is formed by a first metal layer, a second metal layer, and metallized vias connecting the first and second metal layers. The substrate integrated waveguide resonant cavity is a single, integral space. The first metal layer of the substrate integrated waveguide resonant cavity has at least two slot radiating sections, each slot radiating section including at least two slot elements arranged along a first direction, and the slot radiating sections are arranged along a second direction. The coplanar waveguide feeding structure includes at least one feeding section coupled to the substrate integrated waveguide resonant cavity to transmit a feeding signal to the substrate integrated waveguide resonant cavity. The feeding section in the coplanar waveguide feeding structure feeds the slot radiating sections adjacent to it.

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

The invention provides a coaxial-coplanar waveguide broadband matching structure for a millimeter wave frequency band and an installation method. The coaxial-coplanar waveguide broadband matching structure for the millimeter wave frequency band comprises a coaxial plane center line structure, a coaxial plane coplanar gradient line structure and a coaxial plane coplanar waveguide structure which are sequentially arranged in the millimeter wave propagation direction, and the coaxial plane center line structure is fixedly connected with the coaxial plane coplanar gradient line structure. The coaxial plane coplanar tapered line structure is fixedly connected with the coaxial plane coplanar waveguide structure; the coaxial plane center line structure is used for forming a sheet-shaped axisymmetric field force line; the coaxial plane coplanar gradual change line structure is used for realizing gradual change of a field force line; the coaxial plane coplanar waveguide structure is used for forming a specific field force line, the specific field force line enables an electric field to be emitted to the plane grounding layers on the two sides, and the magnetic field shrinks. According to the coaxial-coplanar waveguide broadband matching structure for the millimeter wave frequency band, signal reflection caused by interconnection of the coaxial structure and the coplanar waveguide can be reduced, and impedance mutation is avoided.

A millimeter wave end-fire dual-polarized antenna array disclosed by the present invention comprises two dual-polarized units, each dual-polarized unit comprises a vertical polarization unit and a horizontal polarization unit, the vertical polarization unit is composed of a substrate integrated waveguide, a first metal patch, a second metal patch and a first metal through hole, and the horizontal polarization unit is composed of a second metal patch and a second metal through hole. The horizontal polarization unit is composed of a substrate integrated coaxial line, a dipole and a third metal patch; the rear end of the vertical polarization unit is connected with the substrate integrated waveguide power divider; the substrate integrated waveguide power divider is connected with the substrate integrated waveguide grounding coplanar waveguide; the rear end of the horizontal polarization unit is connected with the substrate integrated coaxial line power divider; the substrate integrated coaxial line power divider is connected with the substrate integrated coaxial line grounding coplanar waveguide; the grounding coplanar waveguide is connected to the coaxial joint for antenna excitation. The antenna has the characteristics of wide working bandwidth, compact structure, stable radiation performance and the like, and has a wide application prospect in millimeter wave wireless communication.

This invention relates to a pattern-reconfigurable antenna based on artificial surface plasmon polaritons (SSPPs), belonging to the field of antenna technology. The antenna includes a coplanar waveguide feed line, a transition structure, a reconfigurable SSPP waveguide, and periodic radiating elements. The reconfigurable SSPP waveguide modifies the dispersion characteristics by adding a varactor diode to a traditional SSPP element and adjusting the capacitance value using a bias circuit. The periodic radiating elements are elliptical patches with rectangular slots, coupled to the reconfigurable SSPP waveguide to radiate electromagnetic waves. This invention solves the problems of single radiation direction in traditional antennas and low gain in existing reconfigurable antennas. It achieves fixed-frequency beam scanning (maximum 23°) and frequency beam scanning (maximum 90°) in the 11.5GHz-15GHz frequency band, with gains greater than 9dBi (maximum 11.1dBi), expanding the detection range and increasing the detection distance, making it suitable for fields such as UAV detection.

The embodiment of the invention provides an antenna packaging structure, a preparation method thereof and a terminal. The antenna package structure includes: a redistribution layer provided with a reflector; the first packaging body is positioned on the redistribution circuit layer; the at least two conductive columns are located in the first packaging body; the coplanar waveguide is located on the surface, far away from the redistribution circuit layer, of the first packaging body and is electrically connected with the reflector through the conductive column; the chip is positioned on one side, far away from the redistribution circuit layer, of the first packaging body, is arranged at an interval with the coplanar waveguide and is electrically connected with the redistribution circuit layer through the conductive columns; the second packaging body is located on the side, away from the redistribution circuit layer, of the first packaging body and wraps the coplanar waveguide and the chip; and the antenna is positioned on the surface, far away from the first packaging body, of the second packaging body and is aligned with the coplanar waveguide.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

This invention relates to a microwave multi-mode flow measurement method for horizontal oil-water two-phase flow, employing a combination of a coplanar waveguide-excited helical microwave sensor and a dual-coaxial microstrip antenna sensing unit. The method includes: constructing a relationship between the mixing dielectric constant and water holdup of the horizontal oil-water two-phase flow based on the phase output signal of the coplanar waveguide-excited helical microwave sensor, thereby obtaining formulas for predicting water holdup and oil holdup using the dielectric constant of the oil-water mixture in a horizontal pipe; utilizing the upstream and downstream phase output signals of the dual-coaxial microstrip antenna sensing unit; constructing a correlation velocity model for the horizontal oil-water two-phase flow under different operating conditions based on experimental data, obtaining the functional relationship between the correlation velocity of the mixed fluid in the pipe and the mixing velocity and the phase-separated apparent velocity; and constructing a drift model for the horizontal oil-water two-phase flow under different flow patterns, obtaining functions relating the mixing velocity, the oil phase apparent velocity, and the oil holdup. This invention offers high measurement accuracy.

The embodiment of the present application provides a kind of single-layer planar dipole antenna, wherein the antenna is applied to intelligent vehicle technical field, wherein the single-layer planar dipole antenna includes: base material, planar dipole antenna, planar balun, differential double-wire transmission line and band ground coplanar waveguide;Wherein, planar dipole antenna, planar balun, differential double-wire transmission line and band ground coplanar waveguide are arranged on the same layer of base material surface;Band ground coplanar waveguide includes center signal conductor and left and right two side reference ground, two metal arms of planar balun are connected to left and right two side reference ground of band ground coplanar waveguide respectively, and the upper end of differential double-wire transmission line is respectively connected to two radiation arms of planar dipole antenna, while the lower end of differential double-wire transmission line two transmission lines are respectively connected to one of center signal conductor and left and right two side reference ground of band ground coplanar waveguide.The embodiment of the present application can realize the integrated molding of antenna by the structure of single surface arrangement antenna, and reduce the integration difficulty of antenna.

The invention discloses a steep transition type artificial surface plasmon low-pass filter based on a spur line structure, and belongs to the technical field of low-pass filters, the steep transition type artificial surface plasmon low-pass filter comprises a dielectric substrate, a coplanar waveguide is arranged on the upper surface of the dielectric substrate, and a spur line unit array is arranged on the lower surface of the dielectric substrate; the coplanar waveguide comprises a center conductor belt and grounding belts symmetrically distributed on the two sides of the center conductor belt, L-shaped groove unit arrays are etched on the grounding belts, the L-shaped groove unit arrays are distributed in the length direction of the coplanar waveguide, and each L-shaped groove unit array comprises a filtering unit and transition units symmetrically arranged at the two ends of the filtering unit. The spur line unit array is aligned with the center of the filtering unit on a projection plane perpendicular to the wave propagation direction. According to the steep transition type artificial surface plasmon low-pass filter based on the spur line structure, adjustable dispersion cut-off frequency and sharp transition from a pass band to a stop band are achieved, and meanwhile the structure is simple and miniaturized.

The invention relates to an LTCC (Low Temperature Co-Fired Ceramic)-based switch type band-pass filter. The filter comprises a multi-layer LTCC substrate, a resonator, a switching circuit and a control circuit are packaged into a whole through a three-dimensional integration technology, and the multi-layer LTCC substrate is formed by vertically stacking and sintering a plurality of layers of ceramic green sheets; the number of the resonators is at least two, the adjacent resonators realize electromagnetic coupling through a rectangular coupling window, and the tail ends of the resonators are connected to a bottom layer grounding plane through metalized through holes; the switching circuit comprises a plurality of PIN diodes, the diodes are embedded between the fourth layer and the fifth layer of the LTCC by flip-chip bonding, the anodes are connected with the control line through through holes, and the cathodes are directly grounded; the control circuit comprises a coplanar waveguide and a high-frequency choking coil, and the coplanar waveguide is connected with the high-frequency choking coil in series. The switch and the filter are integrally packaged, and the size is smaller than 5 mm * 3 mm * 1 mm; the switching state insertion loss is less than or equal to 2dB, and the turn-off isolation is greater than or equal to 30dB; lTCC packaging is resistant to high temperature and vibration, and is suitable for severe environments.

The invention relates to the technical field of CPO packaging, and discloses a CPO packaging structure based on a glass carrier plate, which comprises the glass carrier plate, an electric chip, a silicon optical chip, an adaptive structure and an optical fiber connector, and is characterized in that the electric chip is electrically connected with the glass carrier plate; the glass carrier plate is provided with an accommodating groove, the silicon optical chip is arranged in the accommodating groove and is electrically connected with the glass carrier plate, and a first waveguide is arranged in the silicon optical chip; the adaptive structure is connected to a first step part at the edge of the glass carrier plate, the adaptive structure and the silicon optical chip are distributed at an interval, and the glass carrier plate is provided with a second waveguide between the accommodating groove and the adaptive structure; the second waveguide and the first waveguide are arranged in a coplanar manner and are aligned and connected, and the other end of the second waveguide is provided with a lens corresponding to the adaptive structure; the optical fiber connector is detachably connected with the adaptive structure, and an optical fiber of the optical fiber connector is aligned and connected with the lens. The second waveguide and the first waveguide are in coplanar alignment connection, complex vertical optical path coupling is omitted, and the purpose of high-density integrated packaging is achieved through the embedded structure and the coplanar waveguide.

An electronic device may be provided with a sidewall, a rear wall, a cover layer mounted to the sidewall, and a display panel mounted to the cover layer. A conductive mesh may be layered onto the cover layer within a gap between the panel and the sidewall. The device may include an antenna with a radiating cavity and a radiating slot overlapping the radiating cavity. The radiating slot may have opposing edges defined by the conductive mesh and the display panel. The radiating cavity may have edges defined by the sidewall, the display panel, the conductive mesh, the rear wall, and an air loop gasket. The radiating cavity and the radiating slot may be fed by a coplanar waveguide that overlaps the radiating slot.

The invention provides a third harmonic suppression film microstrip filter based on a mixed structure. Comprising a substrate, a pair of coplanar waveguide feeder lines used for being connected with an external circuit and playing a role in impedance matching, and a plurality of interdigital resonators used for generating passband characteristics of the filter, the hairpin resonator is used for generating a transmission zero point at the low end of the filter to improve low-end stop-band suppression, the 1 / 4 wavelength open-circuit lines are used for suppressing third harmonics of the filter, and the pair of coplanar waveguide feeder lines, the interdigital resonators, the hairpin resonator and the 1 / 4 wavelength open-circuit lines are all laid on the substrate. The plurality of interdigital resonators are located between the pair of coplanar waveguide feeders, the hairpin resonator is located between the plurality of interdigital resonators, the pair of coplanar waveguide feeders is connected with the interdigital resonators at two sides of the plurality of interdigital resonators, and the plurality of 1 / 4 wavelength open-circuit lines are connected with the pair of coplanar waveguide feeders in parallel.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The application discloses a compact broadband beam dipole antenna array based on high-order modes, which comprises two subarrays, the two subarrays share a dielectric substrate with upper and lower surface parts partially covered with copper, and are fed with equal amplitude through a 1:2 power division feeding structure, the two subarrays are left-right symmetrical about a central axis of the dielectric substrate, each subarray comprises a substrate integrated waveguide cavity and multiple pairs of side-by-side dipoles, and is connected by a grounded coplanar waveguide, the substrate integrated waveguide cavity is formed by equidistantly arranging metalized vias, and works in TE 510 high-order modes, a dipole is arranged at the position of the center of the periphery of each electric field loop of the substrate integrated waveguide cavity, and single-side radiation with high directivity in the H plane and wide 3dB beam width in the E plane can be obtained by arranging the radiation arms of the dipoles according to the superposition and cancellation rules of the radiation field. The application solves the problems of complex structure and difficult implementation of the existing wide beam antenna.

The invention provides a liquid crystal antenna, a liquid crystal phased array and electronic equipment, and relates to the technical field of liquid crystal antennas. The liquid crystal antenna comprises a waveguide, a coplanar waveguide coupling layer, a liquid crystal phase shift layer and an antenna radiation layer which are sequentially stacked in the transmission direction; the waveguide is used for transmitting a TE mode wave, the coplanar waveguide coupling layer is used for converting the TE mode wave into at least one TEM mode wave, the liquid crystal phase shift layer is used for converting the TEM mode wave into a target wave beam in a phase shift manner, and the antenna radiation layer is used for outputting the target wave beam in a radiation manner. Therefore, signal interaction is carried out between the waveguide and the liquid crystal phase shifting layer in a mode that the coplanar waveguide coupling layer transmits the TEM mode waves, so that the purpose of signal interaction between the waveguide and the liquid crystal phase shifting layer is achieved, and technical support is provided for implementation of the liquid crystal antenna. The liquid crystal antenna is simple in structure, the liquid crystal material has the properties of low cost and low power consumption, and the cost and the power consumption of the liquid crystal phased array adopting the liquid crystal antenna are reduced.

The present disclosure generally relates to a compact, conformal space-filling antenna system integrated within an ingestible capsule endoscope. The system utilizes a coplanar waveguide (CPW)-fed antenna, featuring a notched ground plane, a meandering radiating patch, and a parasitic patch, both designed in a serpentine pattern. This configuration enables operation at two distinct frequency bands: approximately 0.915 GHz with a 150 MHz bandwidth and 2.4 GHz with a 350 MHz bandwidth. The capsule houses a central processing unit for data transmission and sleep / wake-up functionality, powered by an internal battery. The antenna's conformal design maximizes space utilization within the cylindrical capsule, ensuring efficient wireless communication for medical diagnostic applications.

The application discloses a terahertz frequency doubler structure and method based on a nonlinear transmission line. The terahertz frequency doubler structure comprises an input waveguide-microstrip transition structure, a low-pass filter, a nonlinear transmission line, a band-pass filter and an output microstrip-waveguide transition structure which are cascaded in sequence. The nonlinear transmission line comprises a coplanar waveguide transmission line and a plurality of nonlinear capacitor devices arranged along the transmission direction of the coplanar waveguide transmission line. The nonlinear capacitor devices are connected in parallel to corresponding loading nodes of the coplanar waveguide transmission line. The equivalent capacitance of the nonlinear capacitor devices under working bias and the spacing between adjacent loading nodes are configured to regulate the dispersion relation of the nonlinear transmission line, so that the fundamental wave and the second harmonic satisfy the phase matching condition. The application regulates the capacitance of the nonlinear capacitor devices and the spacing between adjacent loading nodes, so that the fundamental wave and the second harmonic satisfy the phase matching condition, and the output efficiency of the target second harmonic is improved.

The invention relates to a D-band high-integration multi-channel transceiver assembly, the upper surface of a feed unit is provided with a plurality of bonding pad arrays used for flip-chip bonding connection with a radio frequency chip, and each bonding pad array corresponds to a transmitting / receiving channel and is connected to a coplanar waveguide port starting from the layer; the CPWG-SIW transition structure starts from a coplanar waveguide port, and signals are transmitted to a port of the SIW first vertical transition structure in the same layer; the SIW first vertical transition structure starts from a port of the SIW first vertical transition structure, a signal is transmitted downwards to the SIW second transmission line through the SIW first vertical transition structure, after phase adjustment of the SIW second transmission line, the signal is transmitted upwards to the SIW third transmission line, the SIW third transmission line ends in an SIW resonant cavity of the antenna unit, signal energy excites a resonant field in the SIW resonant cavity, and the signal energy is transmitted to the SIW second transmission line through the SIW first vertical transition structure. And the radiation is effectively radiated into the free space through the radiation gap. The targets of feed network broadband matching, low signal transmission loss, low antenna radiation sidelobe and high gain are achieved.

The invention discloses a heat through hole microstrip coplanar waveguide transition structure and a terahertz waveguide probe chip. The transition structure comprises a dielectric substrate, a microstrip signal line, a CPW signal line, a heat through hole and a grounding layer. The microstrip signal line is located on the upper layer of the dielectric substrate. The CPW signal line is located on the lower layer of the dielectric substrate. The heat through hole vertically penetrates through the dielectric substrate, the center of the end part of the micro-strip signal line coincides with the center of the bottom of the heat through hole, and the micro-strip signal line penetrates through the heat through hole and is connected with the CPW signal line; the grounding layer is located on the lower surface of the dielectric substrate, and grounding strips on the two sides of the CPW signal line extend towards the edge and are fused with the grounding layer; the probe chip comprises a signal receiving module, a filtering module, a heat through hole microstrip-CPW transition module and a wafer chip contact module. The microstrip coplanar waveguide transition structure provided by the invention has grounding continuity, low transmission loss and high-frequency interference suppression capability, and provides a solution for performance optimization of a terahertz high-frequency test probe chip.

The invention provides a high-linearity integrated two-stage interference Mach-Zehnder modulator. The high-linearity integrated two-stage interference Mach-Zehnder modulator comprises a first-stage interference modulation unit and a second-stage interference modulation unit, the first-stage interference modulation unit comprises an adjustable beam splitter, a first coplanar waveguide traveling wave electrode, a first direct-current electrode, a second direct-current electrode and a first equal-ratio beam combiner; the first direct current electrode is thermally coupled to the adjustable beam splitter, and the second direct current electrode is thermally coupled to an output optical waveguide branch of the adjustable beam splitter; the second-stage interference modulation unit comprises an equal-ratio beam splitter, a second coplanar waveguide traveling wave electrode, a third direct-current electrode and a second equal-ratio beam combiner; the third direct-current electrode is thermally coupled to an output optical waveguide branch of the equal-ratio beam splitter; by adjusting the splitting ratio of the adjustable beam splitter and adjusting the first direct-current electrode, the second direct-current electrode and the third direct-current electrode, secondary and tertiary nonlinear distortion components in the output signal of the second equal-ratio beam combiner destructively interfere with each other.