423results about "Microstructural devices" patented technology

The present invention provides a display device and a method for manufacturing the display device. A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

The invention discloses a piezoelectric air cooling device based on a piezoelectric film PZT technology, and relates to the technical field of MEMS. The device adopts a two-layer packaging structure of a piezoelectric cantilever beam MEMS chip and a PCB (Printed Circuit Board) with a vent hole. A cantilever beam of the MEMS chip is integrated with an SOI top silicon layer and an ultrathin PZT driving stack, low rigidity and high driving force are achieved, and the surface of the cantilever beam is covered with a PDMS flexible sealing layer to achieve dynamic sealing. When the device works, the cantilever beam is driven to resonate in an ultrasonic frequency band, and efficient synthetic jet is generated at the vent hole by periodically changing the volume of the pump cavity. The technical bottleneck that miniaturization and high performance are difficult to consider at the same time is broken through, and the device has the advantages of being compact in structure, mute and efficient and is suitable for precise heat dissipation of miniature electronic equipment.

The invention provides a large-mirror-surface MEMS two-dimensional scanning micromirror which comprises a fast scanning shaft, a slow scanning shaft, a balance frame with multiple turns of coils, a micromirror surface and reinforcing ribs on the back face of the micromirror, the fast scanning shaft extends in the first direction, one end of the fast scanning shaft is connected with the micromirror surface, the slow scanning shaft extends in the second direction, and the other end of the fast scanning shaft is connected with the micromirror surface. The other end is connected with a balance frame with a plurality of turns of coils; the slow scanning shaft extends in a second direction perpendicular to the first direction, one end of the slow scanning shaft is connected with the balance frame with the multi-turn coil, and the other end of the slow scanning shaft is used for being connected with an external substrate; the balance frame with a plurality of turns of coils is of a hollow structure and is arranged around the mirror surface of the micro-mirror; the reinforcing ribs on the back face of the micro-mirror are of an oval hollow structure and are fixedly arranged on the lower surface of the mirror face of the micro-mirror, and the reinforcing ribs are connected in the first direction and the second direction to form a supporting structure. According to the structure, the rigidity of the mirror surface is greatly improved, and the capability of resisting external force interference is remarkably enhanced.

The invention belongs to the technical field of power equipment monitoring, and discloses a quantum sensing and MEMS sensing integrated partial discharge detection device and method. Partial discharge signals are collected through the quantum sensor and the electric field sensor; the data acquisition card transmits data to the microprocessor, the microprocessor judges the discharge type by using a wavelet transform method, extracts characteristic parameters, transmits the data to the computer, analyzes and determines calculation weights of different sensors according to the characteristic parameters to perform data fusion, and calculates and displays the partial discharge electric field intensity. According to the method, data fusion of the quantum sensor and the MEMS sensor is realized, more comprehensive and accurate information is provided, the source and characteristics of partial discharge can be better identified, the diagnosis accuracy and the reliability of a detection system are improved, false alarm and missing alarm are reduced, and reliable data are provided for the operation state, fault diagnosis and maintenance of power equipment.

The invention relates to an airflow sensor testing structure and a packaging method and packaging structure thereof, each chip unit of an airflow sensor wafer is composed of a substrate (1), a vibrating diaphragm (2) and a back plate which are stacked, the substrate (1) is provided with a back cavity (42) penetrating in the thickness direction of the substrate (1), a slot (10) is formed in the bottom of the substrate (1), and the vibrating diaphragm (2) is arranged in the slot (10). The open groove (10) penetrates through the substrate (1) and the back cavity (42), and the open groove (10) is used for establishing a continuous air flow path in a space outside the back cavity (42) and the air flow sensor. During packaging, the airflow sensor chip is fixed on the packaging substrate through silica gel, a packaging shell is installed outside the airflow sensor chip, the open groove (10) is filled with the silica gel, and blocking and sealing of the open groove (10) are achieved. According to the invention, the requirement of each tube core on the test wafer can be met, the production cost is not increased, and the risk of wafer fragmentation can be effectively avoided.

The invention discloses an outdoor static measurement MEMS sensor sensitivity calibration method, and relates to the technical field of sensor calibration, and the method comprises the specific steps: firstly constructing dual references including a factory reference and a field relation; synchronously collecting multi-source data according to a set period, and preprocessing to obtain an effective sequence; then double check chain fitting key indexes are started in parallel; if a collaborative judgment result is conflicted, high-grade diagnosis is triggered; after diagnosis, the acquisition period of sensitivity drift is prolonged, and parameters are recalculated; and finally, if the conditions are met, solidifying calibration parameters, installing a fault output alarm, and uploading whole-process data records to the cloud. According to the method, the sensitivity calibration of the sensor is guaranteed by constructing double references, multi-source data are synchronously acquired, and the performance is evaluated through double check chains. The efficiency is improved through round-robin scheduling of time slices, effective data are reserved through data preprocessing, differential processing is carried out after fault diagnosis, whole-process data recording and uploading are carried out, calibration parameters are solidified, it is guaranteed that the result is effective, and the application range is widened.

The invention discloses a sensing unit structure of a piezoelectric-piezoresistive coupling type electric field sensor and application, the sensing unit structure comprises a substrate, the substrate is provided with a cantilever beam structure, a piezoelectric crystal block is bonded between the lower surface of the cantilever beam structure and the upper surface of the substrate, and the upper surface of the cantilever beam structure is provided with a Wheatstone full-bridge structure; when the piezoelectric crystal block is subjected to the action of an electric field, the piezoelectric crystal block deforms in the Z-axis direction under the action of an inverse piezoelectric effect, so that the cantilever beam structure deforms; in the Wheatstone full-bridge structure, the resistors arranged at the position with the maximum stress difference value are stressed to deform, the stress directions of the resistors are opposite, and the resistance values of the resistors are changed oppositely; compared with the sensing unit structures of electro-optical and mechanical electric field sensors commonly used at present, the sensing unit structure has the advantages of larger measuring range, smaller volume, lower power consumption and easiness in mass production.

The invention relates to the technical field of heat dissipation devices, in particular to an annular beam heat dissipation device based on an MEMS device, and the device comprises an air inlet grid port which is located at the uppermost end of the heat dissipation device and is used for enabling external air to enter the heat dissipation device and filtering impurities in the air at the same time; the piezoelectric vibrator is used for driving airflow and providing a reliable power source for each structure at the same time; the flexible FPC is used for providing stable electric energy supply and signal transmission for the piezoelectric vibrator; and the impact platform is used for receiving the heat of the equipment needing to be cooled, taking away the heat through air beam heat exchange and discharging the air flow after heat exchange at the same time. Air flow driving force is formed through vibration of the piezoelectric ceramic piece in an electric field, external cold air is driven into the heat dissipation device, efficient heat dissipation is achieved, and the heat dissipation problem that the performance of a CPU is limited in a narrow space is solved.

A microelectromechanical sensor component. The component includes: a substrate; a movable sensor structure connected to the substrate and having a seismic mass portion and a deflection electrode arranged thereon; and at least one evaluation electrode arranged on the substrate. The deflection electrode is arranged so as to be movable relative to the evaluation electrode. The evaluation electrode is configured for capacitive detection of a deflection of the deflection electrode. The deflection electrode and the evaluation electrode form a comb structure. The deflection electrode has a plurality of deflection electrode fingers extending from a deflection electrode bar in the direction of the evaluation electrode. The evaluation electrode has a plurality of evaluation electrode fingers extending, parallel at least in portions to the deflection electrode fingers, from an evaluation electrode bar in the direction of the deflection electrode.

The invention discloses an intelligent foundation detection and evaluation method and system, and the method comprises the steps: setting a ground penetrating radar and a micro-electromechanical sensor array based on the condition of a foundation and a detected target; data acquisition is carried out based on a ground penetrating radar and a micro-electro-mechanical sensor array, and detection radar data and micro-electro-mechanical sensor data are obtained; analyzing and processing the data of the ground penetrating radar and the data of the micro-electro-mechanical sensor; carrying out weighted fusion on the analyzed ground penetrating radar data and the micro-electromechanical sensor data through a space-time synchronization mechanism, and dynamically adjusting the fusion weight according to the soil texture type; and establishing a dynamic risk assessment model, and inputting the fused multivariate data into the dynamic risk assessment model to obtain a risk assessment level of the foundation to be monitored. According to the method, foundation information is obtained from multiple dimensions, defects such as tiny cracks and cavities can be recognized more accurately, and tiny vibration, pressure and humidity changes of the foundation are monitored accurately.

This invention discloses a stress-adjustable semiconductor module packaging structure and its stress adjustment method, belonging to the field of semiconductor packaging technology. The semiconductor module packaging structure integrates an electronically controlled variable stiffness support layer into the semiconductor module packaging structure, realizing real-time adaptive compensation of thermo-mechanical stress during the entire operation of the packaging structure. Since the variable stiffness support layer can actively adjust its stiffness according to the real-time detected temperature and stress distribution, the stress concentration phenomenon inside the semiconductor module packaging structure is significantly alleviated. The stress adjustment method continuously iteratively adjusts the stiffness of the support layer through a closed-loop control strategy to achieve steady-state maintenance after stress balance, so that the semiconductor module packaging structure can still maintain good mechanical and thermal stability under complex working conditions such as frequent start-stop and high altitude and low air pressure.

The packaging structure comprises a shell (1), an installation cavity is formed in the shell (1), an MEMS micro-vibrating mirror (2) and a PCB substrate (3) are fixedly installed in the installation cavity, the center line of the MEMS micro-vibrating mirror (2), the center line of the PCB substrate (3) and the center line of the shell (1) are aligned, an unthreaded hole (4) is formed in the position, corresponding to a mirror face (21) of the MEMS micro-vibrating mirror (2), of the shell (1), and the unthreaded hole (4) is communicated with the installation cavity (1). And the section of the unthreaded hole (4) is in a conical shape with a wide upper part and a narrow lower part. In this way, the optical terminal can be used for extremely-small-sized optical terminal occasions, the mechanical reliability is enhanced, and the thickness is reduced.

A kind of circuit package structure based on three-dimensional heterogeneous laminated structure, the top layer edge of ceramic substrate is welded metal frame, the top layer of ceramic substrate is welded silicon MEMS substrate, the height of metal frame exceeds silicon MEMS substrate, the top layer of metal frame is welded metal cover plate, ceramic substrate, metal frame, metal cover plate form the cavity of airtight package, MEMS substrate is in the cavity, the top layer of ceramic substrate has pad, the bottom layer of silicon MEMS substrate has pad, all are welded internal BGA, the signal of ceramic substrate and silicon MEMS substrate is interconnected by internal BGA, the bottom layer of ceramic substrate has pad, and is welded external BGA, the signal of ceramic substrate is interconnected by external BGA and other substrate, ceramic substrate and silicon MEMS substrate are all stacked by multiple layers, have multiple vertical through holes and multiple horizontal wiring, each through hole is connected to any layer respectively, each wiring is on the surface or inside of multilayer board and is connected to any through hole respectively, silicon MEMS substrate is internally printed pattern and micro-bump using wafer bonding process.

The invention discloses a two-dimensional material processing method and system with atomic level thickness control precision. The method comprises the following steps: S100: obtaining morphology and physical size information of a sample; s200, machining modes and machining patterns are set, complete cutting or layer-by-layer ablation is conducted on the target area of the two-dimensional material according to different machining modes, and point machining, line machining or surface machining can be conducted; s300, detecting the target area to obtain a real-time Raman spectrum signal representing the actual thickness of the target area; and S400, comparing the real-time Raman spectrum signal with a preset target spectrum signal, and automatically and circularly executing the processing in the step S200 and the detection in the step S300 until the real-time Raman spectrum signal is matched with the target spectrum signal, and automatically terminating the processing of the target area. According to the method, thickness regulation and control of atomic level precision, complex micro-nano structure machining and lossless forming are completed, and the machining accuracy, efficiency and consistency of a two-dimensional material device are remarkably improved.

The MEMS (microelectromechanical system) resonator assembly (100) comprises a support structure (102), a resonator element (101) suspended on the support structure (102), and an actuator for exciting the resonator element (101) into a resonant mode. The resonator element (101) comprises two bulk acoustic resonators (110a, 110b) and a flexural mode resonator (120). The flexural mode resonator (120) mechanically connects the two bulk acoustic resonators (110a, 110b). The MEMS resonator assembly (100) is configured to vibrate in a collective resonant mode in which the motions of the two bulk acoustic resonators (110a, 110b) are substantially in phase or 180 degrees out of phase with respect to each other.

An atomic object confinement apparatus includes a substrate comprising a plurality of vias; a plurality of segmented electrodes disposed on a surface of the substrate and in electric communication with respective vias of the plurality of vias; and a patterned component (e.g., metasurface, diffractive optical element, alignment marks) formed on an electrode surface of a segmented electrode of the plurality of segmented electrodes.

The invention discloses an integrated rectifier diode module of a three-dimensional spiral structure, and relates to the technical field of power semiconductor devices, the integrated rectifier diode module of the three-dimensional spiral structure comprises an electrical function unit and a thermal management unit which are integrated in a monolithic mode, and the electrical function unit and the thermal management unit are coaxially arranged to achieve electric-thermal collaborative optimization. The specific structure is as follows: the electrical function unit comprises a substrate layer, an N + GaN conduction layer, an N-GaN drift layer and a three-dimensional spiral super-junction structure embedded in the N-GaN drift layer, the substrate layer, the N + GaN conduction layer, the N-GaN drift layer and the three-dimensional spiral super-junction structure are sequentially stacked from bottom to top, the three-dimensional spiral super-junction structure is formed by alternately and spirally arranging P-NiO regions and N-GaN regions, and charge balance is achieved; the electrical function unit further comprises an anode electrode and a cathode electrode, the anode electrode is arranged at the top of the three-dimensional spiral super-junction structure, and the cathode electrode is arranged on the surface of the N + GaN conduction layer; according to the invention, the power density is improved, the high-power application requirement is met, the device is suitable for the high-power-density field, the environmental adaptability is high, and the stable performance can be kept at different working temperatures.

More than two chips are installed on a substrate, at least one chip is an MEMS chip sensitive to stress, the MEMS chip and other chips needing to be packaged are pre-bonded into a whole, one of the other chips is bonded to the substrate, and the bottom of the MEMS chip is arranged in a non-glue-distribution mode and is opposite to the substrate in a spaced mode. According to the packaging structure provided by the utility model, the bridging silicon chip or a chip with a larger breadth is used as a suspension carrier to bond the MEMS chip in an inverted manner, and the MEMS chip and the substrate are not contacted and are not coated with glue in a chip packaging state, so that the thermal stress deformation of the substrate is effectively isolated, and the performance of the MEMS sensor is improved.

A sensitive unit structure of a piezoelectric-piezoresistive coupled electric field sensor and application, comprising a substrate, a cantilever beam structure is arranged on the substrate, a piezoelectric crystal block is bonded between the lower surface of the cantilever beam structure and the upper surface of the substrate, and a Wheatstone full-bridge structure is arranged on the upper surface of the cantilever beam structure; when the piezoelectric crystal block is subjected to the action of an electric field, the piezoelectric crystal block generates deformation along the Z-axis direction under the action of the inverse piezoelectric effect, so that the cantilever beam structure is deformed; in the Wheatstone full-bridge structure, the resistors arranged at the positions with the maximum stress difference generate deformation under stress, the stress directions of the resistors are opposite, and the resistance value changes are opposite; compared with the commonly used electric field sensor sensitive unit structures such as the electro-optic type and the mechanical type, the present application has the advantages of a larger range, a smaller size, lower power consumption and easy mass production.

A method for ascertaining at least one dynamic parameter of a MEMS apparatus, which has at least one movable component, and the at least one dynamic parameter describes a dynamic property of the at least one movable component. A test signal which has at least one static excitation of constant amplitude is applied to the MEMS apparatus, and a response signal of the MEMS apparatus to the test signal is detected. At least one static parameter of the MEMS apparatus is ascertained by evaluating the response signal in respect of the at least one static excitation, using a model of at least the movable component of the MEMS apparatus, the at least one static parameter describing a geometric and / or structural property of the at least one movable component. The at least one dynamic parameter of the MEMS apparatus is calculated based on the ascertained at least one static parameter.

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.

A MEMS microphone according to the present embodiment comprises: a first substrate; a second substrate disposed on the first substrate; an adhesive layer disposed between the first and second substrates; a MEMS structure disposed on the second substrate; a signal processing device disposed on the second substrate and spaced apart from the MEMS structure; and a capacitor disposed to be spaced apart from the MEMS structure and the signal processing device, wherein the capacitor comprises a first external electrode and a second external electrode disposed at opposite ends thereof, and a plurality of internal electrodes and dielectric layers disposed between the first external electrode and the second external electrode, and the first substrate, the second substrate, and the MEMS structure are stacked in a first direction, while the plurality of internal electrodes are stacked in a second direction perpendicular to the first direction.

The invention relates to a voltage sensing device with a micro-electro-mechanical element. The voltage sensing device comprises a micro-electro-mechanical sensing element, a transimpedance amplifying circuit and a differentiating circuit, the micro-electro-mechanical sensing element is used for sensing an input voltage to generate a sensing current. The transimpedance amplification circuit is connected to the output end of the micro-electro-mechanical sensing element to receive the sensing current and convert the sensing current into an amplification voltage. The differentiating circuit is connected to the transimpedance amplifying circuit and used for receiving the amplified voltage and differentiating the amplified voltage to generate a differential signal, and the differential signal indicates whether the input voltage has a sudden change state or not and indicates the time point when the input voltage suddenly changes.

The utility model relates to the technical field of MEMS, and discloses a micro hot plate based on MEMS technology, which comprises a monocrystalline silicon substrate, a silicon dioxide insulating layer, a heating electrode, a testing electrode and a mounting socket, the monocrystalline silicon substrate provides a good supporting effect for the whole micro hot plate, the silicon dioxide insulating layer is arranged on the monocrystalline silicon substrate, and the testing electrode is arranged on the silicon dioxide insulating layer. The running speed of an internal circuit of the device can be increased, electric leakage can be reduced, and power consumption is reduced; a heating electrode and a testing electrode are arranged on the silicon dioxide insulating layer, rapid and uniform heating of the micro hot plate and real-time monitoring of temperature and gas are achieved, the installation mode is simplified through the overall design, and the testing efficiency is improved; in addition, the micro hot plate composed of the monocrystalline silicon substrate, the silicon dioxide insulating layer, the heating electrode and the testing electrode is inserted into the mounting socket, so that the micro hot plate array can be replaced at any time, and the cost is reduced.

The utility model provides a packaging device and electronic equipment, and the packaging device comprises a bottom plate; the tube shell is arranged on one side of the bottom plate in a surrounding mode, and a containing cavity is formed by the tube shell and the bottom plate; the packaging chip is arranged in the accommodating cavity and is connected with the bottom plate; the blocking structure is arranged around the tube shell and faces the side of the packaging chip, and the distance between the blocking structure and the bottom plate is not smaller than the distance between the side, away from the bottom plate, of the packaging chip and the bottom plate.

A MEMS, microelectromechanical systems, resonator (200) comprising an in-phase resonating element (101, 103) and an out-of-phase resonating element (102) positioned in parallel, wherein the in-phase resonating element (101, 103) and the out- of-phase resonating element (102) are mechanically connected but galvanically isolated.

An apparatus, comprising a film (103) comprising a network of conductive and / or semi-conductive high aspect ratio molecular structures is presented. The apparatus also comprises a frame (102) arranged to support the film (103) at least at least two support positions so that a free-standing region (101) of the film (103) extends between the at least two support positions. The two or more electrical contact areas electrically coupled to the film (103), and these electrical contact areas are arranged to pass electric charge across the free- standing region (101) of the film (103) at a current between 0.01 and 10 amperes.

The utility model discloses a packaging assembly of a pressure sensor. The packaging assembly comprises a packaging housing. The packaging shell is provided with at least two cavities which are not communicated with each other, the cavities comprise a first cavity and a second cavity, a pressure chip is fixedly arranged in the first cavity, and a second chip is fixedly arranged in the second cavity; the first cavity is provided with a first mounting port, the pressure chip is accommodated in the first cavity through the first mounting port, the second cavity is provided with a second mounting port, and the second chip is accommodated in the second cavity through the second mounting port; an air hole is formed in the bottom or the side wall of the first cavity and corresponds to a detection opening of the pressure chip. The special packaging structure is adopted, corrosion resistance is achieved, reliability is good, and detection is convenient.