257results about "Microstructural devices" patented technology

The present invention provides a display device and a method for manufacturing the display device. A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

The invention discloses a piezoelectric air cooling device based on a piezoelectric film PZT technology, and relates to the technical field of MEMS. The device adopts a two-layer packaging structure of a piezoelectric cantilever beam MEMS chip and a PCB (Printed Circuit Board) with a vent hole. A cantilever beam of the MEMS chip is integrated with an SOI top silicon layer and an ultrathin PZT driving stack, low rigidity and high driving force are achieved, and the surface of the cantilever beam is covered with a PDMS flexible sealing layer to achieve dynamic sealing. When the device works, the cantilever beam is driven to resonate in an ultrasonic frequency band, and efficient synthetic jet is generated at the vent hole by periodically changing the volume of the pump cavity. The technical bottleneck that miniaturization and high performance are difficult to consider at the same time is broken through, and the device has the advantages of being compact in structure, mute and efficient and is suitable for precise heat dissipation of miniature electronic equipment.

The invention provides a large-mirror-surface MEMS two-dimensional scanning micromirror which comprises a fast scanning shaft, a slow scanning shaft, a balance frame with multiple turns of coils, a micromirror surface and reinforcing ribs on the back face of the micromirror, the fast scanning shaft extends in the first direction, one end of the fast scanning shaft is connected with the micromirror surface, the slow scanning shaft extends in the second direction, and the other end of the fast scanning shaft is connected with the micromirror surface. The other end is connected with a balance frame with a plurality of turns of coils; the slow scanning shaft extends in a second direction perpendicular to the first direction, one end of the slow scanning shaft is connected with the balance frame with the multi-turn coil, and the other end of the slow scanning shaft is used for being connected with an external substrate; the balance frame with a plurality of turns of coils is of a hollow structure and is arranged around the mirror surface of the micro-mirror; the reinforcing ribs on the back face of the micro-mirror are of an oval hollow structure and are fixedly arranged on the lower surface of the mirror face of the micro-mirror, and the reinforcing ribs are connected in the first direction and the second direction to form a supporting structure. According to the structure, the rigidity of the mirror surface is greatly improved, and the capability of resisting external force interference is remarkably enhanced.

The invention discloses an outdoor static measurement MEMS sensor sensitivity calibration method, and relates to the technical field of sensor calibration, and the method comprises the specific steps: firstly constructing dual references including a factory reference and a field relation; synchronously collecting multi-source data according to a set period, and preprocessing to obtain an effective sequence; then double check chain fitting key indexes are started in parallel; if a collaborative judgment result is conflicted, high-grade diagnosis is triggered; after diagnosis, the acquisition period of sensitivity drift is prolonged, and parameters are recalculated; and finally, if the conditions are met, solidifying calibration parameters, installing a fault output alarm, and uploading whole-process data records to the cloud. According to the method, the sensitivity calibration of the sensor is guaranteed by constructing double references, multi-source data are synchronously acquired, and the performance is evaluated through double check chains. The efficiency is improved through round-robin scheduling of time slices, effective data are reserved through data preprocessing, differential processing is carried out after fault diagnosis, whole-process data recording and uploading are carried out, calibration parameters are solidified, it is guaranteed that the result is effective, and the application range is widened.

A microelectromechanical sensor component. The component includes: a substrate; a movable sensor structure connected to the substrate and having a seismic mass portion and a deflection electrode arranged thereon; and at least one evaluation electrode arranged on the substrate. The deflection electrode is arranged so as to be movable relative to the evaluation electrode. The evaluation electrode is configured for capacitive detection of a deflection of the deflection electrode. The deflection electrode and the evaluation electrode form a comb structure. The deflection electrode has a plurality of deflection electrode fingers extending from a deflection electrode bar in the direction of the evaluation electrode. The evaluation electrode has a plurality of evaluation electrode fingers extending, parallel at least in portions to the deflection electrode fingers, from an evaluation electrode bar in the direction of the deflection electrode.

The invention discloses a two-dimensional material processing method and system with atomic level thickness control precision. The method comprises the following steps: S100: obtaining morphology and physical size information of a sample; s200, machining modes and machining patterns are set, complete cutting or layer-by-layer ablation is conducted on the target area of the two-dimensional material according to different machining modes, and point machining, line machining or surface machining can be conducted; s300, detecting the target area to obtain a real-time Raman spectrum signal representing the actual thickness of the target area; and S400, comparing the real-time Raman spectrum signal with a preset target spectrum signal, and automatically and circularly executing the processing in the step S200 and the detection in the step S300 until the real-time Raman spectrum signal is matched with the target spectrum signal, and automatically terminating the processing of the target area. According to the method, thickness regulation and control of atomic level precision, complex micro-nano structure machining and lossless forming are completed, and the machining accuracy, efficiency and consistency of a two-dimensional material device are remarkably improved.

The invention discloses an integrated rectifier diode module of a three-dimensional spiral structure, and relates to the technical field of power semiconductor devices, the integrated rectifier diode module of the three-dimensional spiral structure comprises an electrical function unit and a thermal management unit which are integrated in a monolithic mode, and the electrical function unit and the thermal management unit are coaxially arranged to achieve electric-thermal collaborative optimization. The specific structure is as follows: the electrical function unit comprises a substrate layer, an N + GaN conduction layer, an N-GaN drift layer and a three-dimensional spiral super-junction structure embedded in the N-GaN drift layer, the substrate layer, the N + GaN conduction layer, the N-GaN drift layer and the three-dimensional spiral super-junction structure are sequentially stacked from bottom to top, the three-dimensional spiral super-junction structure is formed by alternately and spirally arranging P-NiO regions and N-GaN regions, and charge balance is achieved; the electrical function unit further comprises an anode electrode and a cathode electrode, the anode electrode is arranged at the top of the three-dimensional spiral super-junction structure, and the cathode electrode is arranged on the surface of the N + GaN conduction layer; according to the invention, the power density is improved, the high-power application requirement is met, the device is suitable for the high-power-density field, the environmental adaptability is high, and the stable performance can be kept at different working temperatures.

More than two chips are installed on a substrate, at least one chip is an MEMS chip sensitive to stress, the MEMS chip and other chips needing to be packaged are pre-bonded into a whole, one of the other chips is bonded to the substrate, and the bottom of the MEMS chip is arranged in a non-glue-distribution mode and is opposite to the substrate in a spaced mode. According to the packaging structure provided by the utility model, the bridging silicon chip or a chip with a larger breadth is used as a suspension carrier to bond the MEMS chip in an inverted manner, and the MEMS chip and the substrate are not contacted and are not coated with glue in a chip packaging state, so that the thermal stress deformation of the substrate is effectively isolated, and the performance of the MEMS sensor is improved.

A sensitive unit structure of a piezoelectric-piezoresistive coupled electric field sensor and application, comprising a substrate, a cantilever beam structure is arranged on the substrate, a piezoelectric crystal block is bonded between the lower surface of the cantilever beam structure and the upper surface of the substrate, and a Wheatstone full-bridge structure is arranged on the upper surface of the cantilever beam structure; when the piezoelectric crystal block is subjected to the action of an electric field, the piezoelectric crystal block generates deformation along the Z-axis direction under the action of the inverse piezoelectric effect, so that the cantilever beam structure is deformed; in the Wheatstone full-bridge structure, the resistors arranged at the positions with the maximum stress difference generate deformation under stress, the stress directions of the resistors are opposite, and the resistance value changes are opposite; compared with the commonly used electric field sensor sensitive unit structures such as the electro-optic type and the mechanical type, the present application has the advantages of a larger range, a smaller size, lower power consumption and easy mass production.

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.

A MEMS microphone according to the present embodiment comprises: a first substrate; a second substrate disposed on the first substrate; an adhesive layer disposed between the first and second substrates; a MEMS structure disposed on the second substrate; a signal processing device disposed on the second substrate and spaced apart from the MEMS structure; and a capacitor disposed to be spaced apart from the MEMS structure and the signal processing device, wherein the capacitor comprises a first external electrode and a second external electrode disposed at opposite ends thereof, and a plurality of internal electrodes and dielectric layers disposed between the first external electrode and the second external electrode, and the first substrate, the second substrate, and the MEMS structure are stacked in a first direction, while the plurality of internal electrodes are stacked in a second direction perpendicular to the first direction.

The invention relates to a voltage sensing device with a micro-electro-mechanical element. The voltage sensing device comprises a micro-electro-mechanical sensing element, a transimpedance amplifying circuit and a differentiating circuit, the micro-electro-mechanical sensing element is used for sensing an input voltage to generate a sensing current. The transimpedance amplification circuit is connected to the output end of the micro-electro-mechanical sensing element to receive the sensing current and convert the sensing current into an amplification voltage. The differentiating circuit is connected to the transimpedance amplifying circuit and used for receiving the amplified voltage and differentiating the amplified voltage to generate a differential signal, and the differential signal indicates whether the input voltage has a sudden change state or not and indicates the time point when the input voltage suddenly changes.

The utility model provides a packaging device and electronic equipment, and the packaging device comprises a bottom plate; the tube shell is arranged on one side of the bottom plate in a surrounding mode, and a containing cavity is formed by the tube shell and the bottom plate; the packaging chip is arranged in the accommodating cavity and is connected with the bottom plate; the blocking structure is arranged around the tube shell and faces the side of the packaging chip, and the distance between the blocking structure and the bottom plate is not smaller than the distance between the side, away from the bottom plate, of the packaging chip and the bottom plate.

A MEMS, microelectromechanical systems, resonator (200) comprising an in-phase resonating element (101, 103) and an out-of-phase resonating element (102) positioned in parallel, wherein the in-phase resonating element (101, 103) and the out- of-phase resonating element (102) are mechanically connected but galvanically isolated.

The utility model belongs to the technical field of micro electro mechanical systems (MEMS), and particularly relates to a large-capacitance capacitive chip structure. The utility model provides a large-capacitance capacitive chip structure with a small chip size. The utility model comprises a first pole plate (01), and is characterized in that the upper end face of the first pole plate (01) is provided with a groove (61), the upper end face of the first pole plate (01) is provided with a first insulating medium layer (41), and the upper end face of the first insulating medium layer (41) is provided with a second pole plate (02).

A vibration-type actuator includes a vibration body, including an electro-mechanical energy conversion element (4) and an elastic body (3) which are bonded to each other via an adhesive (13), and a contact body in contact with the elastic body. The elastic body includes a flat plate portion (3b) and a protrusion (3a). The vibration-type actuator further includes as part of the adhesive between the electro-mechanical energy conversion element and the flat plate portion, a first adhesive layer (13a), and a second adhesive layer (13b) that is adjacent to the first adhesive layer, a thickness of the second adhesive layer being larger than a thickness of the first adhesive layer and increasing toward the protrusion, or a third adhesive layer (13c) that is adjacent to the first adhesive layer and that is between the first adhesive layer and an edge portion of the electro-mechanical energy conversion element, a thickness of the third adhesive layer increasing toward the edge portion and being 10 µm or less, and a length of the third adhesive layer falling between 100 µm and 400 µm.

A joining correction method corrects a joined state at an unjoined part by applying laser light to the unjoined part if the unjoined part occurs in at least a part of a joining intended site in a joining process of joining two joining targets to each other at the joining intended site set in facing surfaces of the joining targets.

Herein is provided a resonator (100), comprising a resonating element (101) having a top electrode layer (L1), and wherein the resonating element (101) comprises cut(s) (201) where the top electrode layer (L1) is absent to electrically suppress a spurious resonance mode of the resonating element (101). Herein is further provided an apparatus, such as a resonator array, comprising at least one resonator (100).

Optical component (100), comprising: a component substrate (102); a chip of an application-specific integrated circuit (110; 310) arranged on the component substrate (102), wherein the chip of the application-specific integrated circuit (110; 310) includes a detector (112; 312); at least one non-optical sensor chip (116; 316) arranged on the component substrate (102); a preformed polymer field unit cell (128; 328) arranged on the component substrate (102), wherein the preformed polymer field unit cell (128; 328) has at least one cavity (122; 322) and at least one side wall (124; 324) is configured to limit crosstalk between the application-specific integrated circuit (110; 310) and the at least one non-optical sensor chip (116; 316); and a glass cover (134; 334) arranged on the preformed polymer field unit cell (128; 328).

The invention discloses an MEMS electrostatic stiffness-damping regulation and control method, and belongs to the technical field of MEMS. The MEMS parallel plate capacitor structure and the RC element are connected in series to form an electrostatic rigidity-damping regulation and control element, and a pair of direct current driving voltage, alternating current driving voltage and carrier wave voltage with opposite symbols is applied to two groups of fixed polar plates of the differential parallel plate capacitor structure, so that displacement detection and resonance driving of an MEMS device can be realized at the same time; and the equivalent static stiffness and the equivalent static damping of the MEMS device can be regulated and controlled by adjusting the parameters of the MEMS parallel plate capacitor structure, the parameters of the RC element, the direct current driving voltage or the alternating current driving voltage. The MEMS static stiffness-damping regulation and control method is simple, driving voltage signal leakage can be restrained when the MEMS is used as a resonance driver, and meanwhile the MEMS static stiffness-damping regulation and control method can be compatible with MEMS device structural design.

The MEMS device comprises a device structure and a limiting structure, the device structure comprises a rigid structure, a flexible structure and a frame, the flexible structure is used for driving the rigid structure to deflect, and the frame is used for supporting and driving the flexible structure; the limiting structure comprises an upper limiting structure and a lower limiting structure, the upper limiting structure is used for providing a reverse force for the device structure when the device structure moves towards the first direction, the third direction and the fourth direction, and the lower limiting structure is used for providing a reverse force for the device structure when the device structure moves towards the second direction; therefore, the deformation quantity of the device structure is prevented from exceeding the maximum allowable deformation quantity. According to the MEMS device, the limiting structure provides a reverse force for the device structure when the device structure moves towards the first direction, the third direction and the fourth direction, so that the impact resistance of the MEMS device in the X / Y direction is improved; and the lower limiting structure provides a reverse force for the device structure when the device structure moves towards the second direction, so that the product yield of the MEMS device is further improved.

The invention relates to a helium ionization detector based on an MEMS technology, and the detector comprises a substrate and a detection structure, the substrate comprises a substrate, a first bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are respectively bonded to two opposite sides of the substrate in a first direction, and the first direction is perpendicular to the surface of the substrate; the detection structure comprises a detection channel, an air inlet assembly and an air outlet and detection assembly. The detection channel penetrates through the substrate along a first direction; the air inlet assembly is located at an air inlet port, close to the first bonding layer, of the detection channel and is in sealed connection with the air inlet port; the gas outlet and detection assembly is located at a gas outlet port, close to the second bonding layer, of the detection channel and is in sealed connection with the gas outlet port; a sealed space defined by the air inlet assembly, the air outlet and detection assembly and the detection channel is a cavity of the detection structure. The sealing performance between different film layers in the substrate and the sealing performance of the cavity are improved, and the sensitivity of the helium ionization detector is improved.

The application provides an anti-interference multi-integrated MEMS tactile sensor and a manufacturing method thereof. The application comprises a substrate which is a wafer made of silicon; a temperature sensor located on the substrate; a pressure sensor located on the substrate; a thermal infrared detector located on the substrate; and a heat conduction sensor located on the substrate, wherein the heat conduction sensor comprises, from bottom to top, a lower silicon substrate, an upper silicon substrate, an electrically insulating layer and a concentric chromium / platinum film layer. The concentric chromium / platinum film layer in the application adopts a concentric square ring structure, and a certain space exists between the inner ring and the outer ring. This design can eliminate the temperature drift and bending / tension strain in the heat conduction sensor, and can also avoid the thermal interference of the inner ring on the outer ring. The application can realize multi-dimensional measurement of a contacted object, and can simultaneously sense the heat conductivity, contact pressure, external temperature and thermal radiation of the contacted object under the premise of low cost and small size.

In a method for manufacturing a multiple mirror assembly (MMA) comprising a plurality of mirror units (MU) arranged side by side on a support structure (TS) in a grid arrangement, each mirror unit has a base element (BE) and a mirror element (ME) that can be individually tilted relative to the base element (BE). Components of a flexible suspension system (SUS) for the movable mounting of the mirror element (ME) on the base element (BE) are arranged between the base element (BE) and the mirror element (ME).The suspension system (SUS) comprises at least one suspension unit (SU) which has a first connecting section (BC) connected to the base element (BE), a second connecting section (MC) connected to the mirror element (ME), and a flat elastic spring section (SP) between the first and second connecting sections. This spring section has a smaller thickness compared to the adjacent connecting sections and connects the associated connecting elements in the manner of an elastically flexible film hinge. A basic structure, consisting essentially of semiconductor material, is fabricated, comprising structural sections for the base elements, the mirror substrates, and the associated suspension units.The method includes selectively coating at least one surface of the structural sections designed to form the elastic spring sections with coating material to create a heat-conducting layer, which essentially consists of a material having a specific thermal conductivity higher than the specific thermal conductivity of the base material, wherein the heat-conducting layer essentially covers only the surface of the spring section (SP) of the base structure and adjacent surface sections of the connecting elements remain essentially uncoated.

A microelectromechanical sensor (100) is described comprising a substrate (110), a stationary electrode arrangement (120) relative to the substrate (110) with several stationary finger electrodes (122, 124) arranged one behind the other in a detection direction (y), and a mass arrangement (130) with a first seismic mass (140) that is elastically deflectable relative to the substrate (110) in the detection direction (y) and that comprises a first movable electrode arrangement (150) of several movable finger electrodes (151), and a second seismic mass (160) that is elastically deflectable relative to the substrate (110) in the detection direction (y) and that comprises a second movable electrode arrangement (170) of several movable finger electrodes (171). wherein the finger electrodes (151) of the first movable electrode arrangement (150) and the finger electrodes (171) of the second movable electrode arrangement (170) are each alternately in combing engagement with the finger electrodes (122, 124) of the stationary electrode arrangement (120), wherein the mass arrangement (130) further comprises a coupling device (180) mechanically connecting the first seismic mass (140) with the second seismic mass (160) in a manner capable of movement, which is configured to cause a deflection of the first seismic mass (140) in a corresponding deflection of the second seismic mass (160) in the respective opposite direction.

The application discloses an intermediate structure for manufacturing a packaging structure and a packaging structure with a cavity. The intermediate structure for manufacturing the packaging structure comprises a carrier, a cover, a plurality of first metal columns arranged on the surface of the carrier, a plurality of second metal columns arranged on the surface of the cover, and a dissolvable protective layer. Each of the plurality of first metal columns is arranged opposite to each of the plurality of second metal columns, and a cavity is defined. The dissolvable protective layer is filled in the cavity. The packaging structure with the cavity can be manufactured in a more cost-saving manner.

The invention relates to an MEMS structure delamination method and an MEMS structure delamination system, and the method comprises the steps: S1, obtaining a standard sample with a to-be-etched layer, carrying out the ion beam milling of the standard sample to remove the to-be-etched layer, recording a frequency offset [delta] f1 through employing a quartz crystal microbalance, and calculating a calibration coefficient K according to the [delta] f1; and S2, obtaining a sample to be subjected to layer removal, performing ion beam milling on the sample to be subjected to layer removal, calculating the frequency offset delta f2 of the sample to be subjected to layer removal according to the calibration coefficient K, judging a processing end point, and completing layer removal. According to the technical scheme, the mass deposition of the sputtering product in the ion beam milling process is monitored in real time through the QCM, the amount of the removed material is indirectly reflected through the frequency offset delta f1, and the machining precision is improved; a calibration coefficient K is pre-calibrated through a standard sample, and sputtering yield fluctuation in ion beam milling is compensated, so that the delamination process has good repeatability and transportability.

According to the low-overhead MEMS digital gyroscope control system and method, the circuit overhead is saved by utilizing a time division multiplexing circuit of the gyroscope control system, a two-mode signal demodulation circuit adopts addition demodulation to replace a DDS multiplication and low-pass filter method which is complex in logic and overlarge in overhead, and a square wave modulation method which is simple, feasible and easy to implement is adopted. A DDS multiplication demodulation method is replaced, and through the system, the overhead of a gyroscope control system circuit is reduced, the original measurement precision of a gyroscope is kept, the implementation method is simplified, and the requirement for device miniaturization is met.