4070results about "From chemically reactive gases" patented technology

The invention discloses a method for improving the heat dissipation performance of an AlGaInP red light Micro LED chip. The method comprises the following steps: S1, preparing an epitaxial structure: processing a substrate and a buffer layer, growing an etching barrier layer and an ohmic contact layer, and carrying out stacking epitaxy on a functional layer; s2, patterning the silicon-based substrate: preparing a dielectric layer and a metal structure; s3, diamond ohmic contact layer integration: processing a p-type conductive diamond film layer, and carrying out metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end process integration: preparing an electrode and an optical structure; according to the invention, the heat dissipation performance of the chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and metal shading are avoided, and the red light transmittance is improved from 75% to more than 90% by combining with the micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.

The invention provides a data detection method and system, a detection device, computer equipment and a storage medium, and the method comprises the steps: obtaining a detection signal of each wafer surface in a planetary reaction cavity, and cutting the detection signal based on a trigger signal to obtain a first signal sequence and a second signal sequence; processing the first signal sequence by adopting a classification model to obtain a material type on each wafer; querying a corresponding optical model based on the material type; and performing iterative optimization on the optical model, the first signal sequence and the second signal sequence by adopting a decoupling algorithm to obtain a temperature detection value and a reflectivity detection value. According to the method, the original detection signal is segmented into the independent signal sequences based on the trigger signal, then the material type is determined according to the independent signal sequences, the corresponding optical model is selected according to the material type, and finally the temperature detection value and the reflectivity detection value with high accuracy are obtained through decoupling according to the optical model. Accurate analysis of a single wafer signal is realized, and process repeatability and stability are greatly improved.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention relates to the technical field of diamond epitaxial growth, and discloses an intelligent bias voltage regulation and control method and system for diamond single crystal heteroepitaxial growth, and the system comprises a data acquisition module, a prediction module, an intelligent optimization module, a gradient field compensation module and a feedback and regulation and control module. The future trend is pre-judged by adopting the prediction model, and potential growth abnormality such as nucleation probability reduction in a certain area can be perceived in advance, so that the control system has perspectiveness, and lagging of post passive compensation is avoided; the reinforcement learning controller comprehensively considers an accumulative effect and a long-term target in a strategy optimization process, so that bias voltage regulation and control are more intelligent; the intelligent decision-making capability is far better than that of an adjustment mode of artificial experience or a preset program, so that the growth process has stronger robustness on external disturbance such as airflow fluctuation and discharge state change; in the whole growth process, the consistency of crystal nucleuses and growth rates in all regions is kept, and the accumulation of thermal stress and defects in the large-size thin film can be inhibited.

The invention relates to a chip integrated heat dissipation system and a preparation method thereof, and belongs to the technical field of heat dissipation of semiconductor devices. The chip integrated heat dissipation system comprises a nano-diamond transition layer attached to a chip. A micro-column array supporting layer is arranged on one side, far away from the chip, of the nano-diamond transition layer; the micro-column array supporting layer is in contact with one surface of the diamond film, and the other surface of the diamond film is attached to the three-dimensional micro-channel heat dissipation layer. The invention also provides a preparation method of the chip integrated heat dissipation system. The chip integrated heat dissipation system provided by the invention has the advantage of efficient heat dissipation, and through the combination of the three-dimensional structure and the high heat conduction characteristic of diamond, the heat dissipation power density is remarkably improved, the junction temperature of the chip is reduced, and the heat dissipation requirement of a high-power device is met. The heat dissipation performance reliability is high, the thermal stress is eliminated through the gradient structure design, the interlayer binding force is improved, and the stable performance is still kept after multiple thermal cycles. And the preparation process is good in compatibility and convenient for large-scale production.

The invention discloses a method for preparing a yellow artificial diamond by taking hair as a carbon source and a nitrogen source, and relates to the technical field of artificial diamond preparation. The method comprises the following steps that 1, hair is placed in a closed pyrolyzing furnace and pyrolyzed in the oxygen atmosphere at the temperature of 1250-1300 DEG C, the ratio of the hair to oxygen is 1 g: (1.2-1.5) L, and pyrolyzed gas is obtained; 2) sequentially removing sulfur oxide gas and water vapor in the pyrolysis gas; 3, the seed crystal is placed in an MPCVD cavity for diamond workblank growth, nitrogen and carbon elements in the hair are converted into gaseous products which can be directly used for preparing the yellow artificial diamond through the MPCVD method by controlling the hair pyrolysis condition, and the nitrogen element can be effectively doped into crystal lattices in combination with the specific diamond workblank growth technology.

The invention discloses a diamond film and a preparation method and application thereof, and the preparation method comprises the steps: taking a substrate material matched with the lattice constant of a diamond film material as a substrate, and carrying out the surface treatment of the substrate; mixed reaction gas comprising 80%-95% of hydrogen, 3%-8% of methane and 2%-12% of auxiliary gas is introduced, wherein the auxiliary gas comprises at least one of argon, chlorine, hydrogen fluoride and hydrogen chloride; carrying out controlled chemical vapor deposition at 850-1000 DEG C under the pressure of not less than 21 kPa, and growing a diamond film on the surface of the substrate; and annealing the diamond film. According to the method, chemical vapor deposition is controlled through cooperation of auxiliary gas and temperature-pressure gradient, and non-corrosion high-speed growth of the high-purity monocrystal diamond film is achieved; in combination with a dynamic annealing process, lattice defects are effectively repaired, the comprehensive performance is optimized, and the reliability of the thin film serving as a heat dissipation component and other applications is remarkably improved.

The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

The invention provides a semiconductor epitaxial growth control method and system, a control device and a related product, and relates to the technical field of semiconductor detection.The semiconductor epitaxial growth control method comprises the steps that reflection spectrum data is obtained in real time and analyzed to obtain an optical feature set, then the optical feature set is input into an optical transmission model for iterative optimization, and a predicted growth rate is obtained; and comparing the predicted growth rate with the target growth rate, generating deviation information, and outputting a process adjustment control instruction, so that the main control system performs closed-loop correction on the process parameters in the next process period. According to the invention, the optical feature set can dynamically represent the influence of the interface transition layer on the reflection spectrum, so that the inversion precision and robustness of the real epitaxial structure state are improved; closed-loop correction is performed on the process parameters based on the predicted growth rate, so that the growth rate drift can be inhibited in time, the process disturbance can be adaptively compensated, the manual calibration and intervention requirements are reduced, and the production stability, repeatability and batch-to-batch consistency are improved.

The invention relates to the technical field of data processing, in particular to a real-time data monitoring and early warning method for the growth process of a VCSEL epitaxial wafer, which comprises the following steps: acquiring the refractive index of a material used by the epitaxial wafer at the current moment in the growth process of the VCSEL epitaxial wafer by using MOCVD (Metal Organic Chemical Vapor Deposition) equipment; determining the growth rate of the epitaxial wafer at the current moment; determining the mutation degree of the growth rate of the epitaxial wafer at the current moment; determining the correction mutation degree of the growth rate of the epitaxial wafer at the current moment; determining an early warning threshold value at the current moment; and monitoring and early warning of real-time data in the growth process of the VCSEL epitaxial wafer are realized according to the corrected mutation degree and the early warning threshold value. According to the method, accurate inversion of the growth rate and intelligent identification of mutation are realized, abnormal and normal process changes are effectively distinguished, the early warning threshold is adaptively adjusted, the false alarm rate is reduced, and the accuracy and practicability of VCSEL epitaxial growth monitoring are improved.

The invention relates to a method for improving epitaxial growth quality of a tunnel junction cascade semiconductor laser. The invention innovatively provides a strain superlattice gradient repair technology. By designing a low-temperature low-speed nucleation-high-temperature high-speed epitaxy composite growth mode, a periodic superlattice buffer layer is introduced to a tunnel junction interface. Wherein lattice strain relaxation is achieved at the rate of 0.5-2 / s in the low-temperature stage, defect coverage is completed at the rate of 4-8 / s in the high-temperature stage, and dislocation line bending is terminated on a superlattice interface through thermodynamic regulation and control. Compared with the traditional process, the scheme can obviously improve the crystal quality, and does not increase the specific contact resistance of the tunnel junction interface.

The invention discloses a method for bonding diamond and gallium nitride, which comprises the following steps of: preparing monocrystal diamond and a GaN epitaxial wafer, etching the GaN epitaxial wafer to form a layered stepped structure, bombarding GaN by using Ar ion beams to activate the surface of the GaN, depositing an intermediate layer on the surface, thinning the intermediate layer until the middle GaN part is exposed after the deposition is completed, polishing after the thinning is completed, and finally, carrying out the bonding of the diamond and the gallium nitride. The method comprises the following steps: respectively soaking GaN and monocrystal diamond in an acidic solution and an alkaline solution, enabling the GaN and the monocrystal diamond to be in contact with each other after soaking, applying pressure, performing high-temperature annealing for bonding, and then removing a substrate of a GaN epitaxial wafer to finally obtain the GaN / diamond. Through the layered stepped structural design, the bonding of diamond and GaN can be realized, the interface thermal resistance can be effectively reduced, the contact area is obviously increased, the heat dissipation of a GaN device can be more uniform and sufficient, and the problem of difference of thermal expansion coefficients is solved.

The invention relates to the technical field of semiconductor equipment, and provides vertical epitaxy equipment and an epitaxy method. The apparatus comprises: a vertical reaction chamber; the wafer boat is used for vertically loading a plurality of wafers at intervals; the driving device is used for driving the boat to enter / exit the vertical reaction cavity; the material supply assembly comprises a process supply pipeline and a switching unit; the process material source comprises a cleaning material source for removing an oxide layer on the surface of the wafer and an epitaxial material source for executing an epitaxial process; the process monitoring device is used for monitoring process end points of the cleaning process and the epitaxial process; and the control device is in communication connection with the switching unit and the process monitoring device, and controls the switching unit to switch the supply of the material source according to the monitoring result of the process monitoring device. According to the vertical epitaxial equipment, the epitaxial process can be continuously executed without transferring the wafers after the oxide removal process of the plurality of wafers is executed in situ in the equipment, so that the output rate and the yield of the equipment are improved, the cost is reduced, and the fragment and pollution risks are reduced.

The invention relates to a gallium oxide epitaxial layer prediction method and device, equipment and a medium, and the method comprises the steps: collecting the technological parameters of MOCVD and the characterization data of an epitaxial layer, and carrying out the data preprocessing, and obtaining the preprocessed data; performing feature derivation and feature screening on the preprocessed data, and performing data set division on the data after feature screening to generate a training data set and a test data set; constructing an XGBoost regression model, and performing hyper-parameter search to obtain a target optimal parameter combination so as to train the XGBoost regression model and generate a trained XGBoost regression model; testing the trained XGBoost regression model through the test data set to generate a target XGBoost regression model; to-be-measured process parameters of MOCVD are obtained, and epitaxial layer prediction is carried out on the to-be-measured process parameters to obtain the target epitaxial layer thickness and the target full width at half maximum variation. The prediction accuracy of the gallium oxide epitaxial layer is improved.

The invention relates to the technical field of semiconductors, in particular to a gallium oxide heteroepitaxial substrate and a preparation method thereof. The gallium oxide heteroepitaxial substrate comprises: a sapphire substrate; the sapphire substrate is provided with a beveled surface; a periodic pattern structure is arranged on the beveled surface of the sapphire substrate; the depth of a repetitive unit of the periodic pattern structure is 200 nm to 20 [mu] m, the maximum envelope size is 100 nm to 50 [mu] m, and the period interval is 200 nm to 100 [mu] m. The sapphire substrate is subjected to beveling processing and patterning processing, lattice mismatch is remarkably relieved, stress is released, accordingly, dislocation density is reduced, defects in the gallium oxide thin film are reduced, the gallium oxide single crystal thin film with better crystal quality is obtained, and the method has important application value in the field of gallium oxide thin film semiconductor material preparation.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

According to the large-size single crystal diamond structure and the preparation method thereof, at least two diamond seed crystals are embedded into the grooves penetrating through the metal iridium film layer and the yttria-stabilized zirconia layer in the thickness direction, so that the single crystal diamond epitaxial layer can be grown on the diamond seed crystals through the homoepitaxy technology; meanwhile, the monocrystal diamond epitaxial layer is grown on the metal iridium body between the diamond seed crystals by utilizing a heteroepitaxy technology, so that the quality of the corresponding monocrystal diamond epitaxial layer between the diamond seed crystals can be improved; the problem that in the prior art, a splicing growth technology is adopted to obtain a large-size single crystal diamond epitaxial layer, steps or defects appear at splicing seams is solved, and therefore the large-size and high-quality single crystal diamond epitaxial layer can be obtained through the homoepitaxy and heteroepitaxy combined growth mode.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

The present application provides a semiconductor structure and a method for manufacturing the same, relating to the field of semiconductor technology. First, an aluminum nitride buffer layer is prepared based on a substrate, and then the substrate and the aluminum nitride buffer layer are annealed to form an aluminum nitride film on one side of the substrate, wherein the aluminum nitride film includes a plurality of first base islands, and two adjacent first base islands are spaced apart and partially expose the substrate, and then a second base island is grown based on the first base island using preset growth conditions, and finally an epitaxial layer is formed. The semiconductor structure and the method for manufacturing the same provided by the present application have the effect of improving the quality of epitaxial crystals and suppressing leakage of the GaN interface near the substrate.

The invention relates to an enhanced gallium nitride device based on lamination passivation and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The device sequentially comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlN insertion layer and an AlGaN barrier layer from bottom to top, a P-GaN cap layer is arranged on the upper side of the AlGaN barrier layer, passivation layers are arranged on the portions, on the two sides of the P-GaN cap layer, of the AlGaN barrier layer, source electrode metal and drain electrode metal are arranged on the two sides of each passivation layer respectively, the source electrode metal and the drain electrode metal extend to the GaN buffer layer, and grid electrode metal is arranged on the upper side of the P-GaN cap layer. According to the invention, the interface quality of the device is obviously improved, the surface trap effect and hot carrier injection are inhibited, the thermal stress mismatch is relieved, and the overall electrical performance and reliability of the device are improved.

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

The invention provides a preparation method of a MoTe2 single crystal. The preparation method comprises the following steps: A, weighing molybdenum powder, tellurium powder and cobalt powder according to a stoichiometric ratio; b, the powder weighed in the step A is poured into a glass beaker, convective mixing is achieved under the action of a stirrer, and the duration time is 20-30 minutes; c, pouring the powder ground in the step B into a crucible, and sealing; d, putting the crucible in the step C into a glass tube; e, covering the glass tube in the step D with a glass cap; f, vacuumizing the glass tube by using a vacuum pump set, then filling argon, repeating the gas washing process for three times, and then vacuumizing again; g, aligning the middle position of the glass cap, heating to melt the tube wall of the glass tube and the glass cap together, and completing vacuum sealing; and H, putting the glass tube in the step G into a box-type furnace, sintering, taking out, putting into a water bucket, and quenching to obtain a single crystal sample.

The invention relates to the technical field of diamond material preparation, in particular to an integrated diamond growing and polishing method based on cluster beams and local substrate bias, which comprises the following steps: firstly, pretreating a diamond substrate, scanning by using an atomic force microscope to obtain a surface three-dimensional shape, determining concave and flat areas, and designing a local bias distribution map according to the concave and flat areas; applying large negative bias voltage to the concave area, applying small negative bias voltage to the flat area, generating a carbonaceous cluster beam with the size of 3-10 nanometers, guiding the carbonaceous cluster beam to the surface of the substrate, preferentially depositing high-energy clusters on the concave area and depositing low-energy clusters on the flat area under the effect of local bias voltage, and thus synchronously achieving integrated machining of diamond surface growing and polishing. The growth and polishing are integrated, the technological process is simplified, the machining time and cost are greatly reduced, and the production efficiency is improved.

Provided is a temperature measurement device for, in a situation where the temperature of a silicon wafer which is a measurement target is indirectly measured, removing, from actually measured radiance, the effects of radiance coming from a chamber member, and calculating the amount of change in the temperature of the measurement target. The temperature measurement device comprises: a chamber for accommodating a measurement target object; a heating unit; a chamber window at a position in the chamber opposite from the measurement target object; a temperature measurement unit for measuring the temperature of the measurement target object and the chamber window; and a computation unit for calculating the temperature of the measurement target object from detected values of the temperature measurement unit. The computation unit is provided with: a conversion unit for generating, from actually measured temperatures calculated from the detected values of the temperature measurement unit, conversion data pertaining to the amount of change in the temperature of the measurement target object corresponding to the amount of change in the temperature of the chamber window; a condition acquisition unit for acquiring a condition under which the measurement target object is heated; a detected value acquisition unit for acquiring a detected value of the temperature measurement unit; and a temperature correction unit for estimating the temperature of the measurement target object by using the conversion data to correct an actually measured temperature calculated from the detected value of the temperature measurement unit.

The invention discloses a method and a device for growing a semiconductor material film based on machine learning. The method comprises the following steps: acquiring current process parameters; controlling the semiconductor material film to grow under the current process parameters according to the current process parameters; acquiring current film quality data of the semiconductor material film in real time, and predicting future growth quality of the semiconductor material film corresponding to the current process parameter by using a preset machine learning algorithm according to the current film quality data of the semiconductor material film; judging whether the future growth quality of the semiconductor material film is smaller than a preset growth quality threshold value or not, and if yes, ending growth; and if not, adjusting the current process parameters by using a machine learning algorithm, and continuing to execute the step of controlling the semiconductor material film to grow under the current process parameters according to the current process parameters. According to the method, the high controllability of the growth process and the stable improvement of the product quality are ensured, and the accuracy of material performance prediction is promoted.

The invention belongs to the technical field of chemical vapor deposition of diamond films, and particularly relates to a high-temperature pulse bias assisted diamond single crystal heteroepitaxial growth method, which comprises the following steps: carrying out ultrasonic cleaning and etching pretreatment on an Ir / YSZ / Si composite substrate; self-assembling a polystyrene nanosphere template on the surface of the substrate; placing the substrate covered by the template in a low-power oxygen plasma etching machine for etching to form a regular nano pit array; putting the etched substrate into a microwave plasma chemical vapor deposition (MPCVD) reaction cavity, and applying-300V short pulse bias voltage to realize nucleation of high-density diamond crystal nuclei; after the bias voltage is closed, conventional diamond epitaxial growth continues to be carried out in the MPCVD cavity; after the growth is finished, the self-supporting diamond film is separated through chemical dissolution, a nano pit template is formed through pre-etching, and one-time-300V short pulse bias is combined, so that high-density and highly-uniform sp3 crystal nucleus nucleation can be realized on the surface of the substrate, and the distribution consistency and nucleation efficiency of diamond crystal nucleation are improved.

The utility model relates to a wafer heater and a chemical vapor deposition system, which are used for solving the technical problem of non-uniform heat distribution and temperature control on the surface of the wafer heater. The wafer heater comprises a heating part which is used for supporting a wafer and heating the wafer and comprises an inner heating area which is arranged at a position corresponding to a central area of the wafer and an annular outer heating area which surrounds the outer side of the inner heating area and is concentrically arranged with the inner heating area; the interface part is arranged at the bottom of the heating part, and the control module is used for controlling the temperature of the inner heating area and the temperature of the annular outer heating area.

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.