1018results about "From frozen solutions" patented technology

The objective of the present invention is to provide a method for preparing cremation crystals, the method using phosphoric acid extracted from cremated remains as a catalyst in the heat treatment of ashes so that transparent cremation crystals can be prepared only with components of skeletal remains derived from a single individual, and using only skeletal remains of a single individual through the control of the classification ratio of raw bone powder and phosphorus-extracted bone powder, and the like, so that the amount of phosphorus in the crystals is controlled, thereby enabling cremation crystals transparency to be controlled, and thus aesthetic requirements of consumers are satisfied and use as various kinds of jewelry is also facilitated.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention discloses a method and a device for growing a cadmium zinc telluride single crystal, and is characterized in that the method comprises the following steps: (1) putting a cadmium zinc telluride polycrystal ingot into a pyrolytic boron nitride crucible, the cadmium zinc telluride polycrystal ingot is obtained by a preset temperature gradient synthesis method, and has [111] crystal orientation cluster crystal grains in the growth direction; (2) putting the pyrolytic boron nitride crucible into a vacuum closed quartz container, controlling a six-temperature-zone growth furnace through a computer to complete the melting process of a polycrystalline material, and before formal growth, forming a solid-liquid interface distribution structure in which polycrystals are not melted and the rest parts are completely melted at the center of the bottom, wherein the diameter of the solid-liquid interface distribution structure is not less than 30mm; (3) after heat preservation is conducted for a preset time, two-step cooling is achieved in a VGF mode; in the first cooling stage, an initial temperature gradient is formed, and after heat preservation is conducted for a preset time, elimination, merging and growth of [111] crystal nuclei are completed; in the second cooling stage, stable and continuous propulsion of a solid-liquid interface is completed, and continuous growth of single crystals is achieved; and finally, cooling to room temperature to obtain the cadmium zinc telluride single crystal. According to the method, the effect of growing the cadmium zinc telluride crystal with high single crystal rate under the seed crystal-free condition is realized.

A method of synthesis of single crystal nickel-rich cathode materials can include preparing a precursor solution by dissolving lithium nitrate, nickel nitrate, manganese nitrate, and cobalt nitrate in water, aerosolizing the solution of a) in a stream of air using an ultrasonic sprayer, preheating the resulting droplets, premixing the droplets with methane, decomposing the droplets by passing through a co-flow burner, depositing solid particles on a filter, and calcinating the solid particles in a furnace in oxygen to produce a single crystal cathode material.

The invention belongs to the technical field of single crystal alloys, and particularly relates to a Ni3Al-based single crystal alloy and a preparation method and application thereof. The Ni3Al-based single crystal alloy provided by the invention comprises the following element components in percentage by mass: 7.0 to 8.2 wt.% of Al, 2.4 to 3.8 wt.% of Ta, 7.9 to 9.8 wt.% of Mo, 1.5 to 3.6 wt.% of Re, 0.9 to 1.8 wt.% of Cr and the balance of Ni, the Ni3Al-based single crystal alloy comprises a gamma '-Ni3Al phase and a gamma-Ni phase. According to the invention, the contents of Al and Ta elements are increased, so that a gamma '-Ni3Al phase and a gamma-Ni phase are formed in the alloy; mo is used for replacing part of Re, the temperature bearing capacity of the single crystal alloy is improved through high-mismatch-degree alloying design, meanwhile, the cost of the alloy is remarkably reduced, and the endurance life is longer than 150 h under the conditions of 1200 DEG C and 80 MPa.

The invention provides a method for preparing an iron-based superconducting material single crystal in a microgravity environment, and belongs to the field of superconducting materials. The method specifically comprises the following steps: carrying out a microgravity crystal growth experiment in a high-temperature experiment cabinet of a space station, putting a solid-phase sintered or pre-melted rod-like raw material into a furnace body, heating and melting, then slowly solidifying, and finally growing the iron-based superconducting material single crystal with large size and extremely low defect density.

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

The invention provides a directional solidification preparation method of a degradable high-hardness zinc alloy material. The preparation method of the zinc alloy material comprises the machining processes of vacuum induction melting, vacuum directional solidification melting and the like, through the preparation method, growth of Zn + Mg2Zn11 trilobal eutectic and Zn + MgZn2 spiral eutectic is regulated and controlled, microscopic structures are arranged in the specific direction, fine and uniform structure morphology is formed, and the corrosion resistance and the mechanical property of the alloy are improved. The Zn-Mg series alloy prepared by the preparation method disclosed by the invention shows excellent microhardness (181.19 to 243.10 HV). Besides, the corrosion rate of the ideal degradable bone implant is within the range of 0.1 mm / y to 0.5 mm / y, and the corrosion rate of the degradable medical Zn-Mg alloy bone implant material is within the range of 0.0316 mm / y to 0.2280 mm / y, so that the requirement on the corrosion rate in the bone repair process is met; and after the Cu element is added on the basis of Zn-3% Mg, the microhardness of the Zn-3% Mg-Cu-Cu alloy material is improved to about 200HV, and the advantages in the aspect of mechanical support are improved.

The invention relates to an indium phosphide crystal containing doped elements, a single crystal wafer and a preparation method of the indium phosphide crystal. Specifically, the invention relates to an indium phosphide crystal containing a doped element, the doped element is doped in an indium phosphide crystal growth melt or in indium phosphide polycrystalline material synthesis, and the indium phosphide crystal is an S-doped or Sn-doped N-type indium phosphide single crystal or a Zn-doped P-type indium phosphide single crystal. The doped element is one or more elements, and the segregation coefficient of the doped element in indium phosphide is not greater than 0.05; and the content of the doped element in the indium phosphide crystal is 30 ppb to 30 ppm. The invention also relates to a method for preparing the indium phosphide crystal containing the doped elements, a method for preparing a single crystal wafer and a device prepared from the indium phosphide single crystal. The indium phosphide crystal containing the doped elements obtained according to the invention is high in single crystal yield.

The invention relates to the technical field of crystal material preparation, in particular to a layered selenide Ge3Sb2Se5 semiconductor material and a preparation method thereof. The preparation method of the layered selenide Ge3Sb2Se5 semiconductor material comprises the following steps: grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a quartz tube, adding iodine particles, performing vacuum packaging in the quartz tube, putting one end, with raw materials, of the quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to room temperature to obtain the Ge3Sb2Se5 semiconductor material. The crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

The invention discloses an ytterbium ion doped samarium calcium oxide borate nonlinear optical crystal and a preparation method and application thereof.The crystal belongs to a monoclinic system, an m point group and a Cm space group, the chemical formula is YbxSm1-xCa4O (BO3) 3, the chemical formula is 0.1-0.99, the cell parameters are as follows: a = 8.064-8.110, b = 16.045-16.062, c = 3.570-3.600, alpha = gamma = 90 degrees and beta = 100.80-101.38 degrees, and the ytterbium ion doped samarium calcium oxide borate nonlinear optical crystal has good crystal quality and transmittance as high as 87% and can be applied to high-power laser devices, such as laser devices, laser devices, laser devices and the like. The method is widely applied to the fields of photoetching machines, laser medical treatment, laser cutting and the like, and the preparation method has the advantages of being low in cost, high in quality, stable in performance, suitable for large-scale production and the like.

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention discloses a solid electrolyte, a preparation method thereof and a solid battery, the solid electrolyte is a single crystal, the phase is a C2 / m space group of a monoclinic structure, the chemical formula is Li3MX6, and M comprises one or more of Y, In and Sc; x comprises one or more of halogens Cl, Br, I and F. According to the invention, the solid electrolyte of which the phase is a C2 / m space group of a monoclinic structure is subjected to single crystallization treatment, so that the ionic conductivity and the environmental stability of the solid electrolyte are greatly improved; and when the material is applied to an all-solid-state battery, the growth of lithium dendrites can be effectively inhibited, so that the battery has higher cycling stability.

The invention relates to the technical field of crystal furnaces, in particular to a temperature control system and method for a crystal furnace, and the method comprises the steps: setting the target temperature of the crystal furnace, heating the crystal furnace through a heater, and monitoring the internal temperature of the crystal furnace in real time through a temperature sensor; crystal growth is guided through seed crystals in the crystal furnace, and airflow distribution in the crystal furnace is guided through a guide plate; determining whether the temperature control stability of the crystal furnace meets the requirement or not based on the maximum temperature difference quantity in the crystal furnace; if the temperature control stability of the crystal furnace does not meet the requirement, whether the duty ratio of a heater needs to be increased or not is determined; determining whether thermal management in the crystal furnace meets requirements based on the growth rate of the crystal in the crystal furnace; determining whether the rotation speed of the seed crystal needs to be increased; and determining whether the angle of the guide plate in the crystal furnace needs to be increased based on the fluctuation amplitude of the pressure in the crystal furnace. The temperature control stability of the crystal furnace is improved.

The invention provides a cubic tin selenide-based thermoelectric crystal and a preparation method thereof, and relates to the technical field of crystal synthesis. The preparation method comprises the following steps: weighing tin, silver, antimony and selenium simple substances, putting into a first container, vacuumizing and sealing; raising the temperature of the first container to 953-1373K, and keeping the temperature for 15-30 hours; taking out the alloy ingot after cooling, putting the alloy ingot into a second container, vacuumizing and sealing; and heating the second container to 973-1373K, carrying out heat preservation for 5-30h, cooling the second container to 923-1173K at a first cooling rate, cooling the second container to 873-923K at a second cooling rate, and cooling the second container to room temperature at a third cooling rate. The blocky cubic tin selenide single crystal material is prepared, the extremely high grain orientation degree is achieved, and the high-performance thermoelectric material can be obtained.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention relates to the technical field of single-crystal high-temperature alloys, in particular to a control method for dendritic crystal spacing in the growth process of a multi-layer module single-crystal high-temperature alloy. The method comprises the following steps: fixing a pre-prepared multi-layer module single crystal alloy ceramic shell with a graphite center column on a water-cooling copper disc of a liftable bracket of multi-layer module directional solidification equipment; after the mother alloy is smelted, standing is conducted, and the smelting furnace is controlled to pour alloy liquid into the multi-layer module single crystal alloy ceramic shell; and the multi-layer module single crystal alloy ceramic shell filled with the alloy liquid is pulled into the solidification cavity under the driving of the transmission device, so that directional solidification is realized, and the small-dendrite-spacing single crystal high-temperature alloy test bar is obtained. According to the method, under the condition of not changing the casting process, the problems of overlarge dendritic crystal spacing and isotherm inclination caused by the shadow effect of radiation heat dissipation in the directional solidification process of the multi-layer module single crystal high-temperature alloy are solved, and the qualified rate of large-batch production of single crystal blades is effectively increased.

Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.

The invention relates to a rare earth ion doped enhanced ionizing radiation luminescence low-dimensional halide scintillator and a preparation method and application thereof, and belongs to the technical field of scintillating materials. Aiming at the problems that the radiuses of RE ions and low-dimensional halide A5B3 (ClxBryI1-x-y) 8 materials are poor in lattice adaptation degree, the melting points of the RE ions and the low-dimensional halide A5B3 (ClxBryI1-x-y) 8 materials are difficult to consider in the doping process, concentration segregation is easy to occur and large-size crystals are difficult to grow, the solid-solution ratio of halogen anions and the doping concentration of the rare earth ions are regulated and controlled, namely 0.25 < = x < = 0.875, 0 < = y < = 1, x + y < = 1 and 0 < m < 10 are controlled; meanwhile, a rotation descent method is adopted for crystal growth, the scintillator single crystal material A5B3 (ClxBryI1-x-y) 8: m at% RE with the advantages of high ionizing radiation luminous efficiency, high light output and the like is finally obtained, and the material can be applied to the fields of X-ray imaging, gamma-ray detection, particle detection and the like.

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

The utility model belongs to the technical field of crystal growth, and particularly relates to a bearing device for tellurium-zinc-cadmium crystal growth. The utility model discloses a bearing device for growth of tellurium-zinc-cadmium crystals. The bearing device mainly comprises a growth container and a bearing assembly, the growth container is arranged in the bearing assembly; the bearing assembly comprises a base, a connecting shaft and a heat dissipation device. The center of the top of the base sinks downwards; the connecting shaft is arranged in the top sunken area of the base; the diameter of the connecting shaft is consistent with the inner diameter of the base; the growth container is arranged in the heat dissipation device; the bottom of the heat dissipation device is attached to the base and the connecting shaft. The bearing device for the growth of the tellurium-zinc-cadmium crystal is beneficial to the dissipation of latent heat of crystallization generated in the growth process of the tellurium-zinc-cadmium crystal from the bottom, stabilizes a growth interface, eliminates the influence of temperature fluctuation in a heating furnace body on the growth of the crystal, and avoids polycrystals and twin crystals.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention relates to the technical field of thermoelectric semiconductor materials, and discloses a CuAgSe-based thermoelectric semiconductor crystal and a preparation method thereof.The CuAgSe-based thermoelectric semiconductor crystal is prepared from elementary substance Cu, elementary substance Ag and elementary substance Se through melting treatment and a Bridgman growth method; compared with a CuAgSe-based thermoelectric semiconductor crystal prepared by a pressure sintering method, the material has the advantages of high conductivity, slightly low Zebeck coefficient, equivalent heat conductivity, high thermoelectric figure of merit and high thermoelectric performance; according to the method, the cooling gradient and the movement rate of a polycrystalline material in the cooling gradient are controlled to enable the crystal to grow into the CuAgSe crystal with high single orientation, the content of a second phase in the crystal can be remarkably reduced by controlling the cooling gradient, the CuAgSe crystal with high single orientation can be directly obtained, and the second phase does not need to be removed; and the utilization rate of the CuAgSe polycrystalline raw material is obviously improved.

The invention discloses a device and a method for crystal growth. The device comprises a vacuum furnace body system; the double-area heater comprises an upper heater and a lower heater which can be independently controlled, and the double-area heater is arranged in the furnace body and used for adjusting the temperature of the upper area and the temperature of the lower area to form the needed temperature gradient; the heat preservation structure is arranged in the furnace chamber and cooperates with the double-zone heater to form a stable upper high-temperature zone, a stable middle gradient zone and a stable lower low-temperature zone; the multi-rod crucible assembly is arranged in the thermal field in the thermal insulation structure and has the characteristic of symmetrical arrangement; and the crucible lifting mechanism is connected to the multi-rod crucible assembly and is used for adjusting the position of the crucible in the crystal growth process. According to the invention, the stability of the temperature field, the simplification of the structure and the reduction of the cost are realized, and the stress concentration is effectively reduced. Meanwhile, the method supports high-throughput crystal growth, increases the degree of freedom of growth crystal specifications, improves the component screening efficiency, shortens the crystal research and development period, and improves the production efficiency.

The invention discloses a device and a method for laser crystal growth based on a seed crystal reentry method. The device comprises a furnace body and a control system, the lifting mechanism is arranged in the furnace body and is fixedly connected with the top of the furnace body; the lifting mechanism is connected with a seed crystal support, a rotating mechanism is arranged on the seed crystal support, and a torque detection device is arranged on the rotating mechanism; the seed crystal support is used for loading seed crystals; a crucible is arranged under the seed crystal, a plurality of heating units are arranged around the crucible, a rotating magnetic field generator is also arranged around the crucible, and a cooling system is arranged around the rotating magnetic field generator. According to the device and method for laser crystal growth based on the seed crystal reentry method, the eddy current phenomenon in the laser crystal growth process is effectively restrained by accurately controlling the intensity and frequency of the rotating magnetic field and optimizing magnetic field distribution.

The invention relates to a preparation method of a cerium-doped lutetium yttrium silicate crystal, and relates to the technical field of scintillation crystal preparation. Compared with a traditional Czochralski method, the cerium-doped lutetium yttrium silicate is prepared through a flame fusion method, the growth speed of the flame fusion method is 15-20 mm / h, the growth rate is higher, consumable items such as an iridium crucible are not needed, mutual reaction between a high-temperature melt and the crucible is avoided, the cost is effectively reduced, and the cerium-doped lutetium yttrium silicate is obtained. The limitation of a crucible material on preparation of high-melting-point oxide crystals is eliminated, the crystal quality is improved, and the growth period is short.

The invention provides a method and device for obtaining a carbon concentration boundary layer in liquid phase method growth silicon carbide and a product, and relates to the technical field of single crystal growth, and the method comprises the steps: building a geometric model according to the structure information of a liquid phase method growth silicon carbide system, and carrying out calculation grid division; obtaining a plurality of groups of simulation results based on the constructed numerical calculation model; according to the carbon concentration value of each calculation grid in each group of simulation results, a first relation function between the carbon concentration boundary layer thickness of each column of calculation grids and the centrifugal distance is determined, and the centrifugal distance refers to the vertical distance between the column of calculation grids and the central axis of the solid-liquid interface; determining a second relation function among the electromagnetic induction heating frequency, the carbon concentration boundary layer thickness and the centrifugal distance according to the first relation function; and determining the distribution condition of the target carbon concentration boundary layer from the second relation function, and optimizing the structure of the system for growing the silicon carbide by the liquid phase method according to the distribution condition of the target carbon concentration boundary layer.

The invention relates to a sapphire and titanium sapphire composite laser crystal which is composed of sapphire and a titanium sapphire crystal. The doping concentration of the titanium ions is 0-0.8%. And growing by a Bridgman-Stockbarger method. The preparation method has the advantages that 1) the high-quality and large-size composite laser crystal can be obtained through one-time crystal growth, the crystal interface is stable, high power density can be borne, and the crystal is an excellent gain medium of a high-power laser; and 2) the Bridgman-Stockbarger method is utilized to grow the composite crystal, so that the operation steps are simplified, a plurality of crystal surface treatment procedures are omitted, the production cost is reduced, and the possibility of generating defects such as color center, wrappage and degumming in the crystal compounding process can be avoided.