770results about "From frozen solutions" patented technology

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

A method of synthesis of single crystal nickel-rich cathode materials can include preparing a precursor solution by dissolving lithium nitrate, nickel nitrate, manganese nitrate, and cobalt nitrate in water, aerosolizing the solution of a) in a stream of air using an ultrasonic sprayer, preheating the resulting droplets, premixing the droplets with methane, decomposing the droplets by passing through a co-flow burner, depositing solid particles on a filter, and calcinating the solid particles in a furnace in oxygen to produce a single crystal cathode material.

The invention provides a method for preparing an iron-based superconducting material single crystal in a microgravity environment, and belongs to the field of superconducting materials. The method specifically comprises the following steps: carrying out a microgravity crystal growth experiment in a high-temperature experiment cabinet of a space station, putting a solid-phase sintered or pre-melted rod-like raw material into a furnace body, heating and melting, then slowly solidifying, and finally growing the iron-based superconducting material single crystal with large size and extremely low defect density.

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

The invention provides a directional solidification preparation method of a degradable high-hardness zinc alloy material. The preparation method of the zinc alloy material comprises the machining processes of vacuum induction melting, vacuum directional solidification melting and the like, through the preparation method, growth of Zn + Mg2Zn11 trilobal eutectic and Zn + MgZn2 spiral eutectic is regulated and controlled, microscopic structures are arranged in the specific direction, fine and uniform structure morphology is formed, and the corrosion resistance and the mechanical property of the alloy are improved. The Zn-Mg series alloy prepared by the preparation method disclosed by the invention shows excellent microhardness (181.19 to 243.10 HV). Besides, the corrosion rate of the ideal degradable bone implant is within the range of 0.1 mm / y to 0.5 mm / y, and the corrosion rate of the degradable medical Zn-Mg alloy bone implant material is within the range of 0.0316 mm / y to 0.2280 mm / y, so that the requirement on the corrosion rate in the bone repair process is met; and after the Cu element is added on the basis of Zn-3% Mg, the microhardness of the Zn-3% Mg-Cu-Cu alloy material is improved to about 200HV, and the advantages in the aspect of mechanical support are improved.

The invention relates to the technical field of crystal material preparation, in particular to a layered selenide Ge3Sb2Se5 semiconductor material and a preparation method thereof. The preparation method of the layered selenide Ge3Sb2Se5 semiconductor material comprises the following steps: grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a quartz tube, adding iodine particles, performing vacuum packaging in the quartz tube, putting one end, with raw materials, of the quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to room temperature to obtain the Ge3Sb2Se5 semiconductor material. The crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention relates to the technical field of crystal furnaces, in particular to a temperature control system and method for a crystal furnace, and the method comprises the steps: setting the target temperature of the crystal furnace, heating the crystal furnace through a heater, and monitoring the internal temperature of the crystal furnace in real time through a temperature sensor; crystal growth is guided through seed crystals in the crystal furnace, and airflow distribution in the crystal furnace is guided through a guide plate; determining whether the temperature control stability of the crystal furnace meets the requirement or not based on the maximum temperature difference quantity in the crystal furnace; if the temperature control stability of the crystal furnace does not meet the requirement, whether the duty ratio of a heater needs to be increased or not is determined; determining whether thermal management in the crystal furnace meets requirements based on the growth rate of the crystal in the crystal furnace; determining whether the rotation speed of the seed crystal needs to be increased; and determining whether the angle of the guide plate in the crystal furnace needs to be increased based on the fluctuation amplitude of the pressure in the crystal furnace. The temperature control stability of the crystal furnace is improved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.

The invention relates to a rare earth ion doped enhanced ionizing radiation luminescence low-dimensional halide scintillator and a preparation method and application thereof, and belongs to the technical field of scintillating materials. Aiming at the problems that the radiuses of RE ions and low-dimensional halide A5B3 (ClxBryI1-x-y) 8 materials are poor in lattice adaptation degree, the melting points of the RE ions and the low-dimensional halide A5B3 (ClxBryI1-x-y) 8 materials are difficult to consider in the doping process, concentration segregation is easy to occur and large-size crystals are difficult to grow, the solid-solution ratio of halogen anions and the doping concentration of the rare earth ions are regulated and controlled, namely 0.25 < = x < = 0.875, 0 < = y < = 1, x + y < = 1 and 0 < m < 10 are controlled; meanwhile, a rotation descent method is adopted for crystal growth, the scintillator single crystal material A5B3 (ClxBryI1-x-y) 8: m at% RE with the advantages of high ionizing radiation luminous efficiency, high light output and the like is finally obtained, and the material can be applied to the fields of X-ray imaging, gamma-ray detection, particle detection and the like.

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

The utility model belongs to the technical field of crystal growth, and particularly relates to a bearing device for tellurium-zinc-cadmium crystal growth. The utility model discloses a bearing device for growth of tellurium-zinc-cadmium crystals. The bearing device mainly comprises a growth container and a bearing assembly, the growth container is arranged in the bearing assembly; the bearing assembly comprises a base, a connecting shaft and a heat dissipation device. The center of the top of the base sinks downwards; the connecting shaft is arranged in the top sunken area of the base; the diameter of the connecting shaft is consistent with the inner diameter of the base; the growth container is arranged in the heat dissipation device; the bottom of the heat dissipation device is attached to the base and the connecting shaft. The bearing device for the growth of the tellurium-zinc-cadmium crystal is beneficial to the dissipation of latent heat of crystallization generated in the growth process of the tellurium-zinc-cadmium crystal from the bottom, stabilizes a growth interface, eliminates the influence of temperature fluctuation in a heating furnace body on the growth of the crystal, and avoids polycrystals and twin crystals.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

The invention belongs to the field of metal casting, and relates to a self-adaptive upward variable-speed drawing directional solidification device and method, and the device comprises a crystallizer, a cooler, a furnace chamber, a sealing cover, a heater, a crucible, an electric linear motion mechanism, a mold shell and a seed crystal; the sealing cover is detachably and hermetically connected to the top of the furnace chamber; the crucible is positioned in the furnace chamber; the heater penetrates through the outer wall of the furnace chamber and extends into the furnace chamber; the electric linear motion mechanism is arranged at the top of the sealing cover, the crystallizer vertically penetrates through the sealing cover and extends into the furnace chamber, the electric linear motion mechanism is connected with the top of the crystallizer, and the seed crystal is arranged at the bottom of the crystallizer; the mold shell is located under the seed crystal, cooling rings are wound around the top end outside the mold shell, the bottom end of the cooler is communicated with the two cooling rings, the cooler is parallel to the crystallizer and extends out of the furnace cavity from the top of the sealing cover, and the top end of the cooler is detachably connected with the electric linear motion mechanism. And the drawing speed of different stages can be controlled to control the bending degree of a solidification interface, and oblique crystals are controlled.

An automatic temperature control method for a crystal growth device, a system, and a device. The method is used for a crystal growth device. The crystal growth device comprises a main control heating body and an auxiliary control heating body, wherein the main control heating body is used for controlling a high-temperature interval of the growth device, and the auxiliary control heating body is used for controlling a low-temperature interval of the growth device. The automatic temperature control method comprises: acquiring a growth parameter of a crystal growth solid-liquid interface, wherein the growth parameter is used for representing the growth state of a crystal; calculating a temperature adjustment amount for the main control heating body on the basis of the offset of the growth parameter by using a first multi-stage automatic temperature control algorithm, and calculating a temperature difference adjustment amount for the auxiliary control heating body and the main control heating body on the basis of the offset of the growth parameter by using a second multi-stage automatic temperature control algorithm; and adjusting the main control heating body on the basis of the temperature adjustment amount for the main control heating body, and adjusting the auxiliary control heating body on the basis of the temperature adjustment amount for the main control heating body and the temperature difference adjustment amount for the auxiliary control heating body and the main control heating body.

The invention belongs to the technical field of crystals, and particularly relates to a calcium fluoride crystal doped with metal ions, a preparation method of the calcium fluoride crystal and application of the calcium fluoride crystal in optical elements. The crystal is a calcium fluoride crystal doped with magnesium ions and barium ions, and in the preparation method of the crystal, the magnesium ions and the barium ions for doping are pretreated and coated with a calcium fluoride precursor, and the calcium fluoride crystal which is uniform in doping and excellent in performance is prepared by combining a traditional Bridgman-Stockbarger method with a gradient doping process. The crystal is applied to an excimer laser lighting system, and after an optical element manufactured by the crystal is exposed to gamma radiation larger than 2.8 Mrads, the 515 / 380 nm transmittance loss ratio of the optical element is lower than 0.4.

This invention relates to a compound, magnesium gallium selenide (MgHgGa4Se8), and a magnesium gallium selenide (MgHgGa4Se8) infrared nonlinear optical crystal, along with their preparation methods and applications. The compound has the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol. The crystal, also with the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol, lacks a center of symmetry, belongs to the tetragonal crystal system, and has a space group of MgHgGa4Se8. Its cell parameters are α = β = γ = 90°, Z = 1, and its volume is determined by the high-temperature melt method, chemical vapor transport method, or crucible lowering method. This crystal exhibits advantages such as significant nonlinear optical effects, good crystal growth habit, good mechanical properties, high hardness, resistance to breakage and deliquescence, and ease of processing and storage. It can be used to fabricate infrared nonlinear optical devices, which have important applications in optoelectronic warfare, laser communication, and medical fields.

The invention discloses a crystal growth device and a crystal growth method adopting a heat insulation plate to adjust a vertical temperature gradient, the heat insulation plate is introduced between a heater and a crystal growth crucible, the relative positions of the heater and the crystal growth crucible are kept immobile, and the temperature gradient in the vertical direction in a growth chamber is adjusted by utilizing the lifting of the heat insulation plate; therefore, solidification and crystallization of the semiconductor melt in the crucible from bottom to top are achieved, and the single crystal growth process is completed. The device and the crystal growth method are suitable for semiconductor crystal materials such as gallium oxide which can be grown by adopting a melt method. Compared with a traditional method that power is reduced from bottom to top through multiple sets of heaters or a crucible is lowered relative to the heaters, the crystal growth method can keep high stability of a thermal field in the crystal growth process and linear pushing of a crystal growth interface, and therefore the controllability of crystal growth is improved.

The invention relates to an indium phosphide crystal containing sulfur and tin, a single crystal wafer, a preparation method of the indium phosphide crystal and the single crystal wafer and a device. Specifically, the invention relates to an indium phosphide crystal which is an N-type indium phosphide crystal, and the indium phosphide crystal contains 0.5 ppm to 500 ppm of sulfur and also contains 0.5 ppm to 1000 ppm of tin. The invention also relates to a method for preparing the indium phosphide crystal doped with sulfur and tin and a device prepared by using the indium phosphide crystal. The indium phosphide crystal doped with sulfur and tin obtained according to the invention has the advantages of low dislocation density, few defects and high yield.

A single crystal metal wire preparation device comprises a furnace body with a containing cavity, and a smelting crucible provided with a heater is arranged in the containing cavity; the extension pipe is vertically connected to the lower side of the smelting crucible, the upper end of the extension pipe communicates with the interior of the smelting crucible, and an outlet is formed in the lower end of the extension pipe; the cooling pipe is wound on the lower part of the extension pipe, and the cooling pipe is used for introducing cooling liquid to cool the lower part of the extension pipe; and the traction material receiving mechanism is used for downwards dragging the metal wires growing out of the outlet of the extension pipe. According to the scheme, a large cooling gradient is formed between the upper portion and the lower portion of the extension pipe, after metal raw material molten liquid in the smelting crucible downwards flows into the extension pipe, the metal raw material molten liquid is cooled and grows into a single crystal metal wire, and the single crystal metal wire is pulled out of an outlet of the extension pipe under the action of the traction material collecting mechanism and then wound; and the cooling growth process of the single crystal metal wire is mainly carried out in the extension pipe, so that the single crystal metal wire is not easy to break, the production and processing stability is good, and the yield is high.

The invention discloses a preparation method of a metal chalcogenide crystal film, and belongs to the field of semiconductors. According to the preparation method of the metal chalcogenide crystal thin film, the liquid metal is placed in the reaction tank, so that trace metal atoms generated by the surrounding liquid metal can be additionally introduced into the reaction tank where the metal chalcogenide amorphous thin film is located during annealing; the metal-rich liquid interface can be formed on the metal chalcogenide amorphous film, the metal chalcogenide amorphous film can be promoted to be recrystallized into a crystal structure with high crystallinity on the metal-rich liquid interface by reducing surface energy and enhancing atomic diffusion, and then under the driving of solid-liquid-solid growth, the metal chalcogenide amorphous film can be formed into a crystal structure with high crystallinity. And finally, the wafer-level, pure-phase and thickness-controllable metal chalcogenide crystal film is obtained.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

The invention belongs to the field of single crystal growth, and particularly relates to a novel single crystal with ferroelectricity and ferromagnetic orderliness at room temperature and a growth method. Comprising the following steps: grinding a composition 1 and a composition 2 in an aluminum oxide mortar, putting into a platinum crucible, putting the platinum crucible into an aluminum oxide crucible, putting the aluminum oxide crucible into a single crystal growth furnace, adjusting a temperature program, cooling to room temperature, and taking out the platinum crucible; and S2, putting the platinum crucible taken out in the step S1 into a beaker, adding dilute nitric acid, and carrying out ultrasonic cleaning to obtain the novel ordered single crystal with ferroelectricity and ferromagnetic at room temperature. The high-temperature melting method is adopted for the first time to grow the novel single crystal with ferroelectricity and ferromagnetic ordered state at the same time under the room temperature condition, and the operation method is simple and easy to implement.

The present invention discloses a thermoelectric crystal Bi2Se3 and its preparation method and thermoelectric conversion device, wherein the preparation method comprises: (1) mixing elemental Bi and elemental Se and sealing them in a pointed quartz tube, then placing the pointed quartz tube at a first predetermined position below the growth point position in a Bridgman furnace, setting a first predetermined temperature and keeping it warm for a first predetermined time, wherein the Bridgman furnace includes a lower temperature zone, a partition zone, a middle temperature zone and an upper temperature zone from bottom to top, and the growth point position is located within a region 2 mm above the partition zone; (2) placing the pointed quartz tube at a second predetermined position above the growth point position in the Bridgman furnace, setting a second predetermined temperature and keeping it warm for a second predetermined time, and finally lowering the pointed quartz tube to a third predetermined position and annealing to obtain the thermoelectric crystal Bi2Se3. The thermoelectric crystal Bi2Se3 obtained by this method has excellent thermoelectric performance, and its power factor PF reaches 1300 μW / m·K at 50°C. 2 .

The present invention refers to a method for producing a network of nanowires, to a network of nanowires obtainable by said method, to a nonwoven material comprising the network, to an electrode comprising the network, to uses of the network of nanowires and to uses of the nonwoven material.

The invention discloses a high-temperature alloy turbine blade directional solidification method based on multistage dynamic gas protection control. The high-temperature alloy turbine blade directional solidification method comprises the following steps that a high-temperature alloy mother alloy material is put into a crucible; filling inert gas to a preset pressure, heating the crucible, heating to a preset temperature, and keeping the temperature to ensure that the alloy liquid is liquefied; continuously filling inert gas to preset pressure and then refining, wherein a vibration generator generates a magnetic field in the refining process to carry out electromagnetic vibration on the alloy liquid; continuously filling inert gas to preset pressure, and then transferring the crucible; inert gas is continuously filled to preset pressure, then the crucible is tilted, pouring is conducted, and in the pouring process, a gas purging device sprays the inert gas to conduct purging protection on the alloy liquid; and continuously filling inert gas to preset pressure, and pulling the shell to finish the directional solidification process. The method can reduce the gas content in the melt, prevent the melt from being oxidized, promote the removal of a surface oxidation film, reduce pores and oxidation film inclusion, and improve the purity, mechanical properties and yield of the casting.