565results about "From frozen solutions" patented technology

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention provides a method for preparing an iron-based superconducting material single crystal in a microgravity environment, and belongs to the field of superconducting materials. The method specifically comprises the following steps: carrying out a microgravity crystal growth experiment in a high-temperature experiment cabinet of a space station, putting a solid-phase sintered or pre-melted rod-like raw material into a furnace body, heating and melting, then slowly solidifying, and finally growing the iron-based superconducting material single crystal with large size and extremely low defect density.

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

The invention relates to the technical field of crystal material preparation, in particular to a layered selenide Ge3Sb2Se5 semiconductor material and a preparation method thereof. The preparation method of the layered selenide Ge3Sb2Se5 semiconductor material comprises the following steps: grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a quartz tube, adding iodine particles, performing vacuum packaging in the quartz tube, putting one end, with raw materials, of the quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to room temperature to obtain the Ge3Sb2Se5 semiconductor material. The crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

The utility model belongs to the technical field of crystal growth, and particularly relates to a bearing device for tellurium-zinc-cadmium crystal growth. The utility model discloses a bearing device for growth of tellurium-zinc-cadmium crystals. The bearing device mainly comprises a growth container and a bearing assembly, the growth container is arranged in the bearing assembly; the bearing assembly comprises a base, a connecting shaft and a heat dissipation device. The center of the top of the base sinks downwards; the connecting shaft is arranged in the top sunken area of the base; the diameter of the connecting shaft is consistent with the inner diameter of the base; the growth container is arranged in the heat dissipation device; the bottom of the heat dissipation device is attached to the base and the connecting shaft. The bearing device for the growth of the tellurium-zinc-cadmium crystal is beneficial to the dissipation of latent heat of crystallization generated in the growth process of the tellurium-zinc-cadmium crystal from the bottom, stabilizes a growth interface, eliminates the influence of temperature fluctuation in a heating furnace body on the growth of the crystal, and avoids polycrystals and twin crystals.

The invention discloses an oxygen-enriched destressing crystal growth method and a crystal growth furnace, and relates to the technical field of crystal growth, and the oxygen-enriched destressing crystal growth method comprises the following steps: step 1, pre-treating a PMNT polycrystal material, and putting the pretreated PMNT polycrystal material into a crucible; 2, pre-flushing the growth furnace and creating an oxygen partial pressure environment; 3, raising the temperature in the growth furnace to melt and homogenize the PMNT polycrystal material in the crucible; step 4, the crucible moves downwards for directional solidification of the crystal, a solid-liquid interface is formed and stably moves upwards, and in the process, a dynamic regulation and control strategy is adopted in the growth furnace to control an oxygen-enriched environment to promote crystal growth, so that the crystal digests growth stress in the growth process, and formation of oxygen vacancies is inhibited; and step 5, after crystal growth is finished, gradient cooling is performed to room temperature in an oxygen-enriched environment, and a crystal ingot is obtained. Oxygen is used as a regulation and control tool, the stress problem caused by oxygen vacancy is physically solved, the color center and performance problems caused by oxygen vacancy are chemically solved, and the crystal growth quality is improved.

An automatic temperature control method for a crystal growth device, a system, and a device. The method is used for a crystal growth device. The crystal growth device comprises a main control heating body and an auxiliary control heating body, wherein the main control heating body is used for controlling a high-temperature interval of the growth device, and the auxiliary control heating body is used for controlling a low-temperature interval of the growth device. The automatic temperature control method comprises: acquiring a growth parameter of a crystal growth solid-liquid interface, wherein the growth parameter is used for representing the growth state of a crystal; calculating a temperature adjustment amount for the main control heating body on the basis of the offset of the growth parameter by using a first multi-stage automatic temperature control algorithm, and calculating a temperature difference adjustment amount for the auxiliary control heating body and the main control heating body on the basis of the offset of the growth parameter by using a second multi-stage automatic temperature control algorithm; and adjusting the main control heating body on the basis of the temperature adjustment amount for the main control heating body, and adjusting the auxiliary control heating body on the basis of the temperature adjustment amount for the main control heating body and the temperature difference adjustment amount for the auxiliary control heating body and the main control heating body.

The invention belongs to the technical field of crystals, and particularly relates to a calcium fluoride crystal doped with metal ions, a preparation method of the calcium fluoride crystal and application of the calcium fluoride crystal in optical elements. The crystal is a calcium fluoride crystal doped with magnesium ions and barium ions, and in the preparation method of the crystal, the magnesium ions and the barium ions for doping are pretreated and coated with a calcium fluoride precursor, and the calcium fluoride crystal which is uniform in doping and excellent in performance is prepared by combining a traditional Bridgman-Stockbarger method with a gradient doping process. The crystal is applied to an excimer laser lighting system, and after an optical element manufactured by the crystal is exposed to gamma radiation larger than 2.8 Mrads, the 515 / 380 nm transmittance loss ratio of the optical element is lower than 0.4.

This invention relates to a compound, magnesium gallium selenide (MgHgGa4Se8), and a magnesium gallium selenide (MgHgGa4Se8) infrared nonlinear optical crystal, along with their preparation methods and applications. The compound has the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol. The crystal, also with the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol, lacks a center of symmetry, belongs to the tetragonal crystal system, and has a space group of MgHgGa4Se8. Its cell parameters are α = β = γ = 90°, Z = 1, and its volume is determined by the high-temperature melt method, chemical vapor transport method, or crucible lowering method. This crystal exhibits advantages such as significant nonlinear optical effects, good crystal growth habit, good mechanical properties, high hardness, resistance to breakage and deliquescence, and ease of processing and storage. It can be used to fabricate infrared nonlinear optical devices, which have important applications in optoelectronic warfare, laser communication, and medical fields.

The invention discloses a crystal growth device and a crystal growth method adopting a heat insulation plate to adjust a vertical temperature gradient, the heat insulation plate is introduced between a heater and a crystal growth crucible, the relative positions of the heater and the crystal growth crucible are kept immobile, and the temperature gradient in the vertical direction in a growth chamber is adjusted by utilizing the lifting of the heat insulation plate; therefore, solidification and crystallization of the semiconductor melt in the crucible from bottom to top are achieved, and the single crystal growth process is completed. The device and the crystal growth method are suitable for semiconductor crystal materials such as gallium oxide which can be grown by adopting a melt method. Compared with a traditional method that power is reduced from bottom to top through multiple sets of heaters or a crucible is lowered relative to the heaters, the crystal growth method can keep high stability of a thermal field in the crystal growth process and linear pushing of a crystal growth interface, and therefore the controllability of crystal growth is improved.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention belongs to the field of single crystal growth, and particularly relates to a novel single crystal with ferroelectricity and ferromagnetic orderliness at room temperature and a growth method. Comprising the following steps: grinding a composition 1 and a composition 2 in an aluminum oxide mortar, putting into a platinum crucible, putting the platinum crucible into an aluminum oxide crucible, putting the aluminum oxide crucible into a single crystal growth furnace, adjusting a temperature program, cooling to room temperature, and taking out the platinum crucible; and S2, putting the platinum crucible taken out in the step S1 into a beaker, adding dilute nitric acid, and carrying out ultrasonic cleaning to obtain the novel ordered single crystal with ferroelectricity and ferromagnetic at room temperature. The high-temperature melting method is adopted for the first time to grow the novel single crystal with ferroelectricity and ferromagnetic ordered state at the same time under the room temperature condition, and the operation method is simple and easy to implement.

The invention discloses a high-temperature alloy turbine blade directional solidification method based on multistage dynamic gas protection control. The high-temperature alloy turbine blade directional solidification method comprises the following steps that a high-temperature alloy mother alloy material is put into a crucible; filling inert gas to a preset pressure, heating the crucible, heating to a preset temperature, and keeping the temperature to ensure that the alloy liquid is liquefied; continuously filling inert gas to preset pressure and then refining, wherein a vibration generator generates a magnetic field in the refining process to carry out electromagnetic vibration on the alloy liquid; continuously filling inert gas to preset pressure, and then transferring the crucible; inert gas is continuously filled to preset pressure, then the crucible is tilted, pouring is conducted, and in the pouring process, a gas purging device sprays the inert gas to conduct purging protection on the alloy liquid; and continuously filling inert gas to preset pressure, and pulling the shell to finish the directional solidification process. The method can reduce the gas content in the melt, prevent the melt from being oxidized, promote the removal of a surface oxidation film, reduce pores and oxidation film inclusion, and improve the purity, mechanical properties and yield of the casting.

The invention relates to a sulfur-antimony-lanthanum-barium compound, a sulfur-antimony-lanthanum-barium mid-far infrared birefringent optical crystal and a preparation method and application thereof, relates to a mid-far infrared birefringent crystal and a preparation method and application thereof, and aims to solve the problem of low birefringence of the existing mid-far infrared crystal, the sulfur-antimony-lanthanum-barium compound has the chemical formula of Ba2La2Sb4S10 (S2) and the molecular weight of 1424.22, is crystallized in a monoclinic system, and has the molecular weight of 294nm. The space group is P21 / c, and the cell parameters are as follows: a = 8.6373 (5), b = 14.7336 (9), c = 15.9161 (9), alpha = gamma = 90 degrees, and beta = 92.661 (2) degrees. Preparing a compound or a polycrystal material by using a high-temperature solution or a solid-phase method; a polycrystalline material is used for growing a single crystal, the birefringence of the single crystal is 0.53 at the position of 1064 nm, the single crystal has large birefringence within the range of 1-14 microns, and the single crystal is used in an optical isolator, a circulator, a beam shifter, an optical polarizer or an optical modulator.

A multi-component rare-earth garnet optical material containing at least three different rare-earth elements and optionally activator ions is described. The optical material includes a rare-earth garnet scintillator. A method for preparing powders, ceramics, and single crystals of the optical material is also described. Further, a radiation detector including a rare-earth garnet scintillator is described.

The invention discloses a growth method of an alloy metal single crystal, which comprises the following steps: loading an alloy raw material containing a target alloy metal single crystal into a crucible, placing the crucible in a vacuum furnace, purifying the atmosphere in the vacuum furnace, and filling protective gas; heating until the alloy raw material is fully molten, filling set gas to normal pressure, and keeping the temperature to enable the molten liquid to reach a saturated state; cooling at a set cooling rate to form crystals on the surface of the melt; and naturally cooling to room temperature, taking out the crucible, and transferring and treating the surface crystal to obtain the alloy metal single crystal. A set gas is introduced into alloy melt or a crucible material is used for dissolution, two-dimensional single crystals are formed on the surface of the melt in the cooling process, and the two-dimensional single crystals serve as a template to induce metal single crystals to grow from the surface. The method is simple in principle, novel and easy to operate.

The application discloses a kind of high plasticity single crystal high-entropy high-temperature alloy without Fe and Ti and a preparation method thereof.The chemical composition of the alloy includes Co, Ni, Cr, Al, Ta, Mo and W seven elements, and the atomic percentage of each element is Co 35-45at%, Ni 30-40at%, Cr 3-5at%, Al 10-13at%, Ta 1-4at%, Mo 1-3ar% and W 3-5at%.The preparation method includes the following steps: sequentially putting elemental Co, Ni, Cr, Ta, Mo and W into the crucible of vacuum induction melting furnace for heating and melting, adding elemental Al when the temperature rises to the refining temperature, and pouring into master alloy ingot;using high-speed solidification Bridgeman method and seed crystal method to prepare single crystal high-entropy high-temperature alloy test rod with <001> grain orientation;and sequentially carrying out solid solution treatment, primary aging and secondary aging on the single crystal high-entropy high-temperature alloy test rod, to obtain the high plasticity single crystal high-entropy high-temperature alloy without Fe and Ti.The single crystal high-entropy high-temperature alloy of the application has the advantages of high-entropy alloy and single crystal high-temperature alloy, and has excellent room temperature and high temperature mechanical properties.

The application belongs to the technical field of communication automation, and discloses a high-efficiency preparation process implementation method of semiconductor silicon carbide material based on a liquefaction method. The application aims at the core pain points of preparing semiconductor silicon carbide material by the liquefaction method, and constructs three core modules of raw material liquefaction precision regulation and control, silicon carbide crystallization directional induction and preparation process multi-field synergistic optimization, covering the whole process preparation of silicon carbide from raw material pretreatment, liquefaction reaction to crystallization forming. By adopting the cores of raw material component homogenization liquefaction regulation and control, silicon carbide crystal nucleus directional growth induction and temperature-pressure-concentration multi-field synergistic optimization, the technical bottlenecks of traditional liquefaction method preparation process, i.e. "raw material liquefaction is uneven, crystallization orientation is disordered and multi-field regulation and cooperation is poor", are broken through, the uniform liquefaction of raw materials, the directional growth of silicon carbide crystals and the high-purity forming are realized, the crystal quality, purity and preparation efficiency of semiconductor silicon carbide material are significantly improved, and the high-performance material demand of the third-generation semiconductor power device and high-frequency device is adapted.

To provide a method for forming a single crystal gallium arsenide substrate.SOLUTION: The method includes: sealing a charge comprising a polycrystalline gallium arsenide (GaAs) seed crystal, a B2O3 sealing material, and carbon in a crucible; sealing the crucible into a quartz ampoule; performing a vertical gradient freeze crystal growth process by heating the ampoule using a multi-zone heating system to gradually melt the charge material until a portion of the seed crystal is melted; moving a pedestal relative to the crucible, the system operable to control the heating of the multi-zone heating system and the movement of the pedestal; and performing controlled cooling of the multi-zone heating system during growth from the partially melted seed to form a single crystal 200 mm (8 inch) GaAs substrate.SELECTED DRAWING: Figure 1

The application discloses a kind of second generation nickel-based single crystal superalloy recrystallization defect simulation and control method.The method steps are: according to sample preparation wax mold, after sand blasting, dry baking, manufacture ceramic shell;Through directional solidification preparation second generation nickel-based single crystal superalloy sample, control pulling speed, holding temperature and temperature gradient and other parameters;According to service condition preparation sample, simulate stress loading, in combination with heat treatment simulate actual service environment;Using electron backscattering diffraction and X-CT imaging, characterize recrystallization grain orientation distribution, three-dimensional morphology, content and thickness.Process parameter-defect characteristic mapping relationship is established, the stress distribution characteristics during preparation are clarified, the ceramic shell and preparation process are feedback controlled, and the control of recrystallization defects is realized.The application simulates the actual service environment of high-temperature alloy blade, and restores the performance of recrystallization defect sample in actual service environment.The application provides an experimental reproduction method and effective process control strategy for recrystallization defect research.

This invention discloses a samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material, its preparation method, and its applications. The samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material belongs to the monoclinic crystal system, has a space group of Cm, and a chemical formula of Sm. 0.3 La 0.1 :Y 0.6 Ca4O(BO3)3 has a second harmonic response intensity of 0.89 × KDP, and exhibits transmittance exceeding 80% in the 500–1000 nm and 1600–2400 nm wavelength ranges. It also has a strong absorption peak in the 1000–1600 nm wavelength range. Therefore, the samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal can be considered as a nonlinear optical crystal material with broad application prospects in the field of optics.

The application provides a device and method for growing 6-inch ultra-low dislocation germanium single crystal by VGF+VB method, and belongs to the technical field of semiconductor crystal growth equipment. The device comprises a furnace body, at least six segments of independent temperature control heaters arranged in the furnace body along an axial direction, a flexible adjustable heat insulation structure, a PBN crucible system for loading seeds and raw materials, and a precision lifting device for realizing relative movement between the crucible and the furnace body. An accurate axial temperature gradient is constructed and moved by the multiple independent heaters, the radial heat loss is controlled by the adjustable heat insulation structure, and the multiple variable decoupling control technology is used to cooperatively and accurately control each temperature zone, so that the crystal growth dislocation, thermal stress and the solid-liquid interface shape are accurately controlled, and the high-efficiency, high-quality and ultra-low dislocation density growth of the 6-inch germanium single crystal is realized.

The invention relates to the technical field of crystal growth, and discloses a Bridgman crystal growing furnace and a crystal growing method.The Bridgman crystal growing furnace comprises a heating furnace and a heat preservation stabilizing device; the heating furnace is internally provided with a crystallization cavity, the crystallization cavity is a cylindrical cavity, the heat preservation and stabilization device is arranged at one end in the crystallization cavity, the heat preservation and stabilization device is in a round tube shape, the heat preservation and stabilization device and the crystallization cavity are coaxially arranged, and the heat preservation and stabilization device is used for allowing a crystallization container to penetrate through and limiting the crystallization container. Due to the cooperation of the heat preservation and stabilization device and the crystallization cavity, the heat preservation and stabilization device mechanically supports and limits the crystallization container in the crystallization growth process of the crystallization container, so that the crystallization container is always located at the central position of the crystallization cavity, and the phenomenon that the crystallization container is bent or deviated under the working conditions of high-temperature heat flow, mechanical vibration and the like is effectively avoided.

To provide an apparatus for manufacturing oxide single crystals, a method for manufacturing gallium oxide single crystals using the apparatus, and a gallium oxide single crystal manufactured thereby. [Solution] By applying a method that uses the oxide pellet itself, which is to be made into a single crystal, as the crucible without using a separate crucible, the problem of impurities entering due to the crucible is minimized. Furthermore, by applying a method that mixes hydrocarbon fuel gas and oxygen gas and generates heat using a flame, the growth atmosphere for the oxide single crystal can be maintained in a high-oxygen atmosphere, enabling the production of high-quality oxide single crystals with few defects.

The invention relates to a sapphire single crystal (4) and a method and apparatus (1) for producing it, wherein the sapphire single crystal (4) comprises a plurality of layers (11) arranged in a C-axis (7), wherein each layer (11) has a cross-sectional topography (12), wherein the cross-sectional topographies (12) of the layers (11) repeat with respect to geometric patterns (13) formed in the cross-sectional topographies (12), wherein the geometric patterns (13) are predominantly composed of polygonal rings, in particular of concentric hexagonal or concentric hexagonal rings.