219 results about "Melting layer" patented technology

Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.

A task often encountered in very recent times is the rapid provision of prototypes. Particularly suitable processes are those based on pulverulent materials and in which the desired structures are produced layer-by-layer through selective melting and solidification. The invention provides the constitution, production and use of a copolyamide powder which was produced using the following monomer units: a) laurolactam or ω-aminoundecanoic acid, and also b) dodecanedioic acid, and either c) decanediamine or dodecanediamine, in shaping processes, and also to mouldings produced through a layer-by-layer process which selectively melts regions of a powder layer, using this specific powder. Once the regions previously melted layer-by-layer have been cooled and solidified, the moulding can be removed from the powder bed. The mouldless layer-by-layer processes for the production of components using the copolyamide powder result in simplified and more reliable conduct of the process and better recyclability.

The present invention is a method suitable for heat treatment, or a heat treatment method for growing single crystal silicon carbide by a liquid phase epitaxial method, wherein a monocrystal silicon carbide substrate as a seed crystal and a polycrystal silicon carbide substrate are piled up, placed inside a closed container, and subjected to high-temperature heat treatment, by which very thin metallic silicon melt layer is interposed between the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate during heat treatment, and single crystal silicon carbide is liquid-phase epitaxially grown on the monocrystal silicon carbide substrate. The closed container is in advance heated to a temperature exceeding approximately 800° C. in an preheating chamber kept at a pressure of approximately 10⁻⁵ Pa or lower, the closed container is reduced in pressure to approximately 10⁻⁵ Pa or lower, and the container is transported and placed in the heat chamber, which is in advance heated to a prescribed temperature in a range from approximately 1400° C. to 2300° C., in a vacuum at a pressure of approximately 10⁻² Pa or lower or in an inert gas atmosphere at a prescribed reduced pressure, by which the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate are heated in a short time to a prescribed temperature in a range from approximately 1400° C. to 2300° C. to produce single crystal silicon carbide which is free of fine grain boundaries and approximately 1/cm² or lower in density of micropipe defects on the surface. Further, the present invention is heat treatment equipment used in carrying out the heat treatment method.

In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.

The invention discloses a differential metl-electrospinning jet head and belongs to the field of electrostatic spinning. The differential metl-electrospinning jet head mainly comprises a hopper, a charging barrel, a jet head body, an internal cone-shaped jet head, an airflow channel air inlet pipe, an airflow channel standpipe, an airflow channel insulating layer, a jet head inner body, a button, a jackscrew, a heating device, a temperature sensor, a screw rod, a coupler, a servomotor, a motor support, a grounding electrode, a receiving electrode plate and a high-voltage electrostatic generator. The differential metl-electrospinning jet head adopts a center-feeding and side-air-intake manner, ensures uniform melt circumferential distribution through the adjustment of the jackscrew, adopts the inner cone-shaped jet head, and can spin dozens of filaments through a single jet head, thereby achieving high spinning efficiency; and by the aid of hot air, the melt layer on the inner cone surface can be blown thinner, the filaments can be drawn, and a heat insulation role can be played on the environmental temperature to slow down cooling of the filaments and prolong the filament drawing time. Therefore, the spun filaments are thinner. The differential metl-electrospinning jet head has the advantages of simple structure, capability of spinning thin fibers and high spinning efficiency.

A method of coating an edge surface (30) of an anisotropic ceramic matrix composite material (10) for use in a high temperature environment is disclosed where the edge surface (30) has exposed reinforced fiber layers (20). A laser beam may be used to melt a portion of the ceramic matrix composite material (10) on the edge surface (30) forming a melt layer. The melt layer is retained proximate the edge surface and the laser beam is controlled to form an isotropic protective coating (32, 34) on a portion of the edge surface (30). A method may be used to form a component for use in a high temperature environment that includes directing a laser beam toward a ceramic matrix composite material (10), controlling the laser beam to melt a portion of the ceramic matrix composite material (10) and forming a homogeneous protective coating (32, 34) from a melt layer that exerts compression on at least a portion of the ceramic matrix composite material (10) when the melt layer is cooled. A powder material (35) may be added to a surface of the ceramic matrix composite material (10) selected to melt with the ceramic matrix composite material (10) to improve the wear resistance or hardness of the isotropic protective coating (32, 34).

A card with a picture-contained mirror surface layer comprises an upper covering layer; an upper middle layer installed below the upper covering layer; a lower middle layer installed below the upper middle layer; a lower covering layer installed below the lower middle layer; and a picture-contained mirror surface layer installed at a position between the upper covering layer and the upper middle layer or between the upper middle layer and the lower middle layer, or the picture-contained mirror surface layer is installed between the lower middle layer and the lower covering layer. Or the combination of the different layers is performed by mechanically melting the layers and then combining the melting layers. The picture-contained mirror surface layer is made from compound material or metals. The picture is selected from textures, numbers, figures, or the combinations of above items. The different layers have present different light effect.

A stack type battery has a plurality of positive electrode plates (1), a plurality of negative electrode plates (2), and a separator (3) interposed therebetween. The positive electrode plates (1) and the negative electrode plates (2) are alternately stacked one on the other. The separator (3) has a heat-resistant layer (3R) having heat resistance and heat-melting layers (3M), each of the heat-melting layers (3M) having a shutdown function and a melting point lower than the melting point of the heat-resistant layer (3R) and disposed over the entire surface of each of both sides of the heat-resistant layer (3R). The heat-melting layers (3M) of the separator (3) are fixed to each other by thermal welding.

The invention relates to a device for manufacturing a nano laminated composite material, which comprises a plastifying device, a converging device, a laminated composite generator and a molding device which are sequentially connected in series front and back, wherein the laminated composite generator is used for averagely dividing n layers of polymer melts extruded by the converging device into m equal parts along the width direction; when each equal part of melt continues to forwards flow in the laminated composite generator, the melt is rotated for 90 degrees and broadened by m times so as to mutually converge with an adjacent melt layer into a laminated structure at an outlet end; then an identical laminated composite generator is connected in series to obtain an n*m*m structure; and if k identical laminated composite generators are connected in series, a multi-layer structure composite material with n*mk layers can be obtained. In the invention, the laminated composite generators rotating for 90 degrees after melt segmentation are adopted, thus the segmentation quantity is large, the quantity of serial units can be reduced, and the melt is easy to maintain a symmetrical structure in a flow broadening and thinning process, so that the layer thickness precision is easy to guarantee, and a nano laminated composite multi-layer product can be obtained.

The invention relates to the use of a powder made of a polymer, which of two or more components with functionalities suitable for Diels-Alder reactions, or of a powder mixture (dry blend) made of powders respectively of at least one of the reactive components, where these together enter into the Diels-Alder reaction with one another and are capable of a retro-Diels-Alder reaction, in a rapid-prototyping process.

The invention further relates to moldings produced with use of said polymer powder through a layer-by-layer shaping process in which regions of a powder layer are melted selectively. The molding here can be removed from the powder bed after cooling and hardening of the regions previously melted layer-by-layer.

A formulation and method of printing an ink or meltable ink layer having reactive dyes or mixtures of reactive dyes and disperse dyes as colorants. The ink or ink melt layer also includes an alkaline substance, a binder, and optionally, a heat-activated printing additive. Permanently bonded color images are provided by the reaction between the reactive dye and the final substrate, which may be any cellulosic, protein, or polyamide fiber material, or mixtures with polyester. Reaction occurs upon heat activation of the printed ink image.

An aluminum thermal self-propagating-injection depth reduction based method for preparing metal titanium belongs to the technical field of metal titanium smelting. The method is as below: using an aluminum thermal self-propagating reduction process to reduce rutile or high titanium slag to obtain a high temperature melt; then conducting insulation smelting separation on the high temperature melt in a medium frequency induction furnace to form a slag layer with alumina as an upper layer and a titanium melt layer as a lower layer; injecting CaF2-CaO pre-melted slag to the alumina based slag layer in a bottom blowing way; washing slag and refining; then injecting a high temperature calcium magnesium steam or a high-temperature steam to the high temperature titanium metal melt layer through inert carrier gas carrying in a bottom blowing mode, and conducting eccentric mechanical stirring and depth reduction refining; and finally, cooling the high temperature melt to room temperature to remove the upper metal smelting slag, so as to obtain the metal titanium. The method of the invention can realize low cost and short process preparation of metal titanium, and the prepared metal titanium has oxygen removed completely. The method has the advantages of short process, low energy consumption and simple operation, etc.

A coil includes a coil unit provided with a wire and a self-melting layer formed on surfaces of the wire, and a resin member affixed to the wire. The wire is adhered and affixed to the resin member by the self-melting layer.

A sealant layer for use in a composite film structure, which includes at least one non-melting layer, the structure being for manufacturing pouches for containing flowable material utilizing high speed vertical form, fill and seal processes with rotary thermic sealing, the sealant layer comprising from about 70 to about 90% by weight of a single-site catalyst C₄-C₁₀ ethylene alpha-olefin polymer having a density in the range of from 0.890 to about 0.912 gm/cc and a melt index in the range of from about 0.2 to about 2.0 dg/cc, and from about 10 to about 30% by weight of one or more of the following: a linear low density polyethylene selected from single-site catalyst and multi-site catalyst polymers, the polyethylenes having a density in the range of from about 0.916 to about 0.930 gm/cc, a high pressure low density polyethylene and processing additives.

The invention relates to an aluminum matrix composite, in particular to a preparation method and device of an in situ aluminum matrix composite. The preparation method of the in situ aluminum matrix composite is characterized by comprising the steps that firstly, under the protection of gas, reactants are involved into melt layer by layer for a full contact reaction by means of electromagnetic stirring and interface reverse shear stirring formed by a graphite rotor; then the graphite rotor is placed into the reacting melt for continuous reverse stirring; and finally, casting molding is conducted at a normal casting temperature. The preparation method has the characteristics that composite reinforcement bodies are high in reacting generation efficiency and even in distribution; and the composite is stable in performance; the preparation method is easy to achieve; and industrial application is facilitated.

A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.

Some variations provide a method of making an additively manufactured metal component, comprising: providing a feedstock that includes a high-vapor-pressure metal; exposing a first amount of the feedstock to an energy source for melting; and solidifying the melt layer, thereby generating a solid layer of an additively manufactured metal component. The metal-containing feedstock is enriched with a higher concentration of the high-vapor-pressure metal compared to its concentration in the additively manufactured metal component. The high-vapor-pressure metal may be selected from Mg, Zn, Li, Al, Cd, Hg, K, Na, Rb, Cs, Mn, Be, Ca, Sr, or Ba, for example. Additively manufactured metal components are provided. Metal-containing feedstocks for additive manufacturing are also disclosed, wherein concentration of at least one high-vapor-pressure metal in the feedstock is selected based on a desired concentration of the high-vapor-pressure metal in an additively manufactured metal component derived from the metal-containing feedstock. Various feedstock compositions are disclosed.

Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm² or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.