5741 results about "Active layer" patented technology

A sensor and method for page-based optical data storage. The sensor includes a partially-reflective mirror, a reflective mirror disposed substantially collinear with and spaced apart from the partially-reflective mirror, and an active layer disposed substantially collinear with and between the partially-reflective mirror and the reflective mirror. The partially-reflective mirror has a first and second side and transmits a portion of light incident on the first side. The reflective mirror reflects light incident on the reflective mirror toward the partially-reflective mirror. The active layer absorbs at least a portion of the light oscillating at the resonant frequency.

The invention relates to the technical field of batteries, in particular to a lithium ion secondary battery. The lithium ion secondary battery comprises a negative plate and electrolyte, the negative plate comprises a negative current collector and a negative active layer located on at least one side surface of the negative current collector, the negative active layer comprises a first coating and a second coating which are arranged in the thickness direction of the negative plate, and the first coating is located between the negative current collector and the second coating; the second coating comprises first silicon carbon, and the sphericity degree of the first silicon carbon is 0.8-1; the silicon content of the first silicon carbon is 30%-60%; the average particle size of the first silicon carbon is R1, and R1 is more than 6 microns and less than or equal to 15 microns; the electrolyte comprises a fluorine-containing solvent and a nitrile compound, the fluorine-containing solvent comprises fluoroethylene carbonate and / or ethyl difluoroacetate, based on the total weight of the electrolyte, the content of the fluorine-containing solvent is w1, and w1 is larger than or equal to 30% and smaller than or equal to 70%; the content of the nitrile compound is w2, and 0.4% < = w2 < = 7%. The lithium ion secondary battery provided by the invention has good cycling stability and dynamic performance at high voltage and high temperature.

The invention discloses a distributed feedback laser and a preparation method thereof, and relates to the field of lasers. The preparation method of the distributed feedback laser comprises the following steps: forming a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a grating layer, a grating buried layer, a corrosion stop layer, an InP cladding, a barrier gradient layer, a contact layer and a sacrificial layer on a substrate, wherein the sacrificial layer comprises an InP layer and an InGaAs layer which are stacked in sequence; etching to form a ridge waveguide structure; forming an insulating layer; removing the insulating layer in a preset area on the ridge waveguide structure to expose the sacrificial layer; wherein the side wall of the InGaAs layer is completely exposed, and the side wall of the InP layer is partially exposed; and etching to remove the InGaAs layer and the InP layer to form an upper electrode layer and a lower electrode layer. According to the invention, the reliability and the electro-optical conversion efficiency of the distributed feedback laser can be improved.

The invention relates to the technical field of batteries, in particular to a copper foil and a preparation method thereof, a current collector, a pole piece and an energy storage device. A connection degree gamma exists between the surface density of the copper foil and the size and arrangement of the through holes, the formula of the connection degree gamma is # imgabs0 #, and the value range of gamma is 1 + / -0.1; the copper foil is prepared through an electrolytic method, and an insulating acid-resistant coating is dispensed on the surface of a cathode of the electrolytic method to form an insulating acid-resistant layer; according to the electrolytic method, an active layer is formed on the surface of an anode by coating a mixed active substance solution and sintering, an inert substance is coated on the surface of the active layer opposite to a point coating position of a cathode to form an inert layer, and the range of the inert layer is smaller than 70% of the area of a pore region. The porous copper foil prepared by the method has a porous structure, the pore size distribution is more uniform, the size is consistent, meanwhile, the parts except the pores are dense copper layers, and the mechanical property of the material is good.

The invention discloses a component gradient iridium tantalum coating anode and a preparation method thereof, the component gradient iridium tantalum coating anode comprises a titanium-based bottom layer, a middle layer and a surface active layer structure with component gradient, and the middle layer and the active layer are both prepared through a thermal decomposition method. And the intermediate layer is prepared on the titanium substrate and is composed of TiO2 / Ta2O5 mixed oxide. The surface active layer is prepared on the outer side of the middle layer and comprises a plurality of layers of IrO2 / Ta2O5 oxide coatings with different iridium-tantalum proportions. Compared with a traditional uniform coating anode, the prepared component gradient iridium tantalum coating anode can relieve the stress concentration phenomenon and reduce coating cracking, the service life of the anode is remarkably prolonged, and the catalytic activity of the anode is remarkably improved; the modified carbon nano tube is added into the active layer precursor solution, so that the conductivity change caused by component gradient is improved, and the cell voltage of the component gradient iridium tantalum coating anode is effectively reduced; and moreover, the iridium content is lower, and the preparation cost of the electrode is reduced.

The invention provides high-activity contact type silver powder for photovoltaic conductive silver paste, a preparation method of the high-activity contact type silver powder and the photovoltaic conductive silver paste, and belongs to the technical field of photovoltaic materials. The high-activity contact type silver powder comprises net-shaped polycrystalline spherical silver powder and an active layer wrapping the surface of the net-shaped polycrystalline spherical silver powder. Wherein the reticular polycrystalline spherical silver powder is a spherical aggregate formed by stacking and self-assembling flaky particles with the particle size of 200-600 nm, and the reticular polycrystalline spherical silver powder is of a porous structure; and the active layer is an organic amine compound. The silver powder disclosed by the invention has good conductivity after being sintered, the adhesive force of a fine grid is relatively high, and the assembly has relatively high power output.

The invention provides a titanium anode, a titanium anode preparation method, an electrolytic copper foil and application. The titanium anode comprises a titanium substrate and a composite layer on the surface of the titanium substrate. The composite layer comprises a first active layer and a second active layer which are sequentially arranged on the titanium substrate, and the first active layer is arranged on the surface of the titanium substrate; wherein the first active layer includes an oxide of titanium and an oxide of tantalum, and the second active layer includes an oxide of tantalum, an oxide of iridium, and an oxide of cerium. The titanium anode provided by the invention has the characteristics of strong binding force, few cracks, high electrocatalytic activity, good uniformity, good erosion resistance and the like, and is beneficial to prolonging the service life.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The display panel includes a pixel driving circuit. The pixel driving circuit includes a driving transistor and an eighth transistor. A first terminal of the eighth transistor is connected to a first terminal of the driving transistor, and a second terminal of the eighth transistor is connected to a third initial signal line. The display panel further includes: a base substrate, a first active layer, a first conductive layer, and the third initial signal line. The first active layer is located on a side of the base substrate. The first active layer includes an eighth active portion, a second active portion, a ninth active portion, a tenth active portions, and an eleventh active portion. The eighth active portion is connected between the ninth active portion and the tenth active portion. The eleventh active portion is connected to a side of the second active portion.

The invention belongs to the technical field of batteries, and provides a battery cell structure and a manufacturing method and application thereof, the manufacturing method comprises the following steps: forming a plurality of positive electrode insulation partitions arranged at intervals on a to-be-coated surface of a positive electrode current collector, and forming a positive electrode active layer in an area between every two adjacent positive electrode insulation partitions to obtain a positive electrode roll; and unwinding the positive electrode insulation partition, a negative electrode roll and a solid electrolyte membrane roll, carrying out rolling compounding to obtain a composite electrode roll, and cutting the positive electrode insulation partition to obtain the battery cell structure. The positive electrode insulation partition can insulate the periphery of the positive electrode active layer with a smaller area, can compensate the size difference of the positive electrode and the negative electrode, and provides support for the negative electrode in the subsequent rolling compounding process, so that the sizes of the positive electrode and the negative electrode are consistent, and the problem of short circuit caused by edge shearing stress during pressure application is solved; roll-in compounding can effectively improve densification and improve electrolyte interface contact, and the manufacturing method is simple, convenient, economical, efficient and suitable for mass production.

The invention relates to the technical field of batteries, and discloses a roll core and a battery. The roll core comprises a positive plate, a negative plate and a diaphragm, a groove is formed in a positive active layer of the positive plate, and the groove is at least formed in an arc section, closest to the winding center, of the positive plate, so that the thickness of at least partial region on the arc section of the positive plate is reduced, and the risk that active particles on the positive plate pierce the diaphragm is reduced; according to the present invention, by limiting the ratio p1 / H1 between the thickness p1 of the functional layer of the diaphragm and the depth H1 of the groove to be in the range of 0.02-2, the p1 is in the range of 0.3-10 [mu] m, and the H1 is in the range of 3-40 [mu] m, such that the battery can be reduced to the preset charging cut-off current during the charging process, and the self-discharge rate of the battery can be reduced. And on the basis that the battery can reach a fully-charged state, the liquid retention capacity of the battery can be improved, the cycle performance of the battery is improved, and the battery is ensured to have relatively high volume energy density.

The invention provides a negative electrode plate and a lithium ion battery, the negative electrode plate comprises a negative electrode current collector, a first negative electrode active layer and a second negative electrode active layer, the negative electrode current collector comprises a first region and a second region, the first region is arranged on the negative electrode current collector, the second region is located between the edge of the negative electrode current collector and the edge of the first region, the first negative electrode active layer is arranged in the first region, and the second negative electrode active layer is arranged in the second region; the Young's modulus of the second negative electrode active layer is greater than the Young's modulus of the first negative electrode active layer. According to the negative electrode plate provided by the invention, the second negative electrode active layer is arranged in the second region of the negative electrode current collector, the Young modulus of the second negative electrode active layer is greater than that of the first negative electrode active layer, and the relatively large Young modulus can inhibit volume expansion generated by the edge of the negative electrode plate in the charging and discharging process, so that the extension stress in the width direction of the negative electrode plate is reduced; the condition of corner damage caused by excessive extension of the negative plate is improved, so that the safety performance of the lithium ion battery is improved.

A scan driver includes stages which sequentially output scan signals to scan signal lines during an active period of an N-th frame, and at least one of the stages includes an output node controller that supplies a gate-on voltage to a pull-up node in response to a gate control signal of a display driver; and an output controller that outputs a scan signal to a scan signal line by outputting a scan clock signal to a scan signal line in case that the gate-on voltage is supplied to the pull-up node, wherein the output node controller includes a thin-film transistor including a first active layer, and directly or indirectly connected to the pull-up node, and another thin-film transistor including a second active layer including an oxide semiconductor material different from a oxide semiconductor material of the first active layer, and directly connected to the pull-up node.

The invention relates to a Micro-LED full-color display device and a manufacturing method thereof. The display device comprises a driving substrate and first, second and third light-emitting component layers which are bonded in sequence to form a vertical stacked structure. The light-emitting component layers are electrically interconnected among layers through the through electrode group, the first active layer of the first light-emitting component layer is kept continuous, and the active region is prevented from being damaged by controlling the etching depth. The first, second and third light-emitting regions are respectively configured as red, green and blue light-emitting regions, the projection positions on the horizontal plane are staggered, and the area ratio is 2: 1: 1, so that the red light efficiency loss is compensated. The manufacturing method comprises the steps of forming the light-emitting component layers on the temporary substrate and sequentially bonding the light-emitting component layers, wherein when the first light-emitting structure is formed, etching is controlled to be stopped before reaching the first active layer. The method further comprises the processes of filling and planarization of an insulating layer, removal of a temporary substrate, formation of an optical isolation layer and electrode segmentation, and the performance and the manufacturing yield of the device are improved through structural innovation and process optimization.

The invention provides a secondary battery and a power utilization device, the secondary battery comprises a positive pole piece and a negative pole piece, a negative active layer of the negative pole piece comprises a silicon-based material, and a positive active layer of the positive pole piece comprises a lithium transition metal oxide and lithium-containing phosphate of an olivine structure, the lithium-containing phosphate comprises secondary particles I formed by primary particles I, pores exist among the primary particles I in the secondary particles I, and the secondary particles I are of a porous structure; and in the cross section of the secondary particles I, the area of the area filled with the primary particles I accounts for 60%-85%. The secondary battery prepared by the invention has both low-temperature performance and energy density.

The invention discloses a preparation method and a structure of a photonic integrated device, and the method comprises the steps: sequentially dividing a substrate into a front modulator region, a rear modulator region, a front grating region, a gain region and a rear grating region, and growing a first active layer after manufacturing a selected region epitaxial mask pattern in the gain region, the method comprises the following steps of: growing a first active layer in a front modulator region after mask etching operation, growing a second active layer in a front modulator region after mask etching operation, growing a third active layer in a grating region after mask etching operation, finally performing grating manufacturing, and completing manufacturing of a cladding layer, an electric contact layer, an inverted table shallow ridge waveguide structure, an electric isolation trench and an electrode. According to the method, integration of multiple materials is achieved through one-time selective area epitaxial growth and one-time butt joint growth, the material growth frequency is reduced, and the manufacturing cost is saved; the gain region and the rear modulator region realize forbidden band width offset through selective region epitaxial material growth, and multi-wavelength tuning and efficient modulation are realized through fluorescence wavelength difference design of each region, so that a solution can be provided for integration of a wide-wavelength tunable laser and a double-electro-absorption modulator.

The invention relates to a negative pole piece and a preparation method and application thereof.The negative pole piece comprises a current collector and a negative active layer arranged on at least one face of the current collector in the thickness direction, the negative active layer comprises a first active layer, a second active layer and a third active layer, the first active layer is attached to the surface of the current collector, and the second active layer is attached to the surface of the current collector; the second active layer is arranged on the surface, far away from the current collector, of the first active layer, and the third active layer is arranged on the surface, far away from the first active layer, of the second active layer; the first active layer comprises carbon-coated secondary particle graphite, the second active layer comprises heteroatom-doped hard carbon, and the third active layer comprises porous carbon nanofibers. According to the lithium ion battery, the multiple active layers containing different active materials are arranged on the surface of the current collector, and meanwhile, the thickness of each active layer is regulated and the preparation process is optimized, so that the lithium ion battery containing the negative pole piece has high energy density, quick charge capacity and excellent cycle life.

The invention discloses a perovskite solar cell and a preparation method thereof, and belongs to the technical field of perovskite solar cells. SAM molecules are introduced between the hole transport layer and the perovskite active layer, the photoelectric conversion efficiency of the perovskite solar cell is improved, an interface modification layer comprising a sheet-shaped P-type semiconductor material is further introduced at the interface of the hole transport layer and the SAM layer, the interface of the hole transport layer / the SAM layer / the perovskite active layer is improved, and the photoelectric conversion efficiency of the perovskite solar cell is improved. The hole transport layer and the perovskite active layer are separated from each other, the energy level difference between the functional layers is reduced, the carrier extraction and transmission of an interface are enhanced, the sheet structure of the sheet P-type semiconductor material can cooperate with the compact SAM layer to block the direct contact between the hole transport layer and the perovskite active layer, and the hole transport efficiency is improved. And the reduction reaction of halide ions in an interinterface hole transport material and a perovskite material is effectively prevented.

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The invention discloses a P-type tellurium oxide thin film field effect transistor and a preparation method thereof. The transistor is provided with a bottom gate top contact structure. The preparation method comprises the following steps: firstly, cleaning the silicon / silicon dioxide substrate, then depositing a tellurium oxide film as the semiconductor active layer by using a metal mask and an electron beam evaporation method, and finally preparing a layer of nickel with the thickness of about 50nm on the active layer by using the mask to serve as the source electrode and the drain electrode. Compared with a traditional tellurium oxide transistor, the tellurium oxide transistor prepared by the method has the advantages that the carrier mobility and the switching ratio are obviously improved, and the hysteresis effect can be ignored. The electrical performance of the tellurium oxide transistor with the bottom gate top contact structure is improved, and the tellurium oxide transistor has the advantages of being low in cost and simple in process step.

The utility model provides a battery negative pole piece and battery, battery negative pole piece includes current collector and active layer, active layer is coated on current collector at least one side surface, on the active layer is equipped with a plurality of groove structure along the length direction of current collector, groove structure extends along the width direction of current collector, and the groove structure is equipped with the groove structure. The active layer is divided into a plurality of areas by the plurality of groove structures along the length direction of the current collector, and each area is provided with a plurality of hole structures. According to the battery negative plate, the hole structures and the groove structures which are sequentially and alternately arranged in the length direction of the current collector are adopted, the liquid injection time of the battery is shortened, meanwhile, the liquid retention amount of electrolyte is increased, the wettability of the electrode is improved, the cycle life is prolonged, the service life of the battery is prolonged, and the performance stability of the battery is improved; and the problem that the battery performance is influenced due to poor wettability of the battery negative plate in the prior art is solved.

The invention provides a trans-perovskite solar cell containing a fluorine arene phosphoric acid function compensation layer and a preparation method thereof, and the solar cell comprises a conductive substrate, a hole transport layer, a self-assembly monomolecular layer, a function compensation layer, a light active layer, an electron transport layer, a hole blocking layer and a back electrode which are sequentially stacked from bottom to top. The material of the function compensation layer is fluorine-containing aromatic hydrocarbon phosphoric acid. The fluorine-containing aromatic phosphoric acid provided by the invention can make up the anchoring defect on the basis of a self-assembled monomolecular layer, and can effectively passivate the defect at the bottom of perovskite through a plurality of active sites at the same time; the problem of non-ideal performance and stability caused by excessive defects at the self-assembled monomolecular layer / perovskite buried bottom interface of the trans-perovskite solar cell is solved, and a valuable scheme is provided for commercialization of the trans-perovskite solar cell in the future.

The present application provides a battery cell, a battery device, and an electric device. The battery cell comprises a casing and an electrode assembly inside the casing, wherein the electrode assembly comprises a positive electrode sheet, a negative electrode sheet, and a separator between the two electrode sheets. The positive electrode sheet comprises a positive electrode current collector and a positive electrode active layer provided on at least one side of the positive electrode current collector; the positive electrode active layer comprises a positive electrode active material; and the positive electrode active material comprises a nickel-containing lithium transition metal oxide and a lithium-containing phosphate, wherein the molar amount of Ni in the nickel-containing lithium transition metal oxide accounts for 70% to 95% of the total molar amount of the transition metal. The positive electrode active material comprises Ni, Co, Mn, Fe and Li, and the ratio of the mass of Ni in the positive electrode active material to the total mass of Fe and Mn is between 0.15-2.

The invention relates to the field of secondary batteries, and discloses a battery cell and a lithium ion secondary battery. The battery cell comprises a pole piece and a diaphragm; the pole piece comprises a current collector and an active layer arranged on at least one side surface of the current collector; the active layer comprises an active substance, a binder and conductive fibers, and the average length-diameter ratio A of the conductive fibers is 10-500; the puncture strength of the diaphragm is P gf, and P and A meet the condition that A / P is larger than or equal to 0.05 and smaller than or equal to 2. Therefore, good adaptation of the diaphragm and the pole piece can be ensured, the strength of the pole piece is improved, the impedance is reduced, the expansion of the silicon-based negative electrode is inhibited, and the probability that the conductive fiber punctures the diaphragm is reduced, so that the battery has good cycle and rate performance at the same time, and the short-circuit risk is small.

The utility model relates to the technical field of lasers, and discloses a high-slope-efficiency surface grating surface emitting laser which comprises a substrate, a lower waveguide layer, an active layer and an upper waveguide layer from bottom to top along the cross section. A ridge-shaped waveguide is formed in the middle area of the uppermost layer of the upper waveguide layer, and a Bragg grating is etched on the surface of the ridge-shaped waveguide; the Bragg grating comprises a section of second-order grating located in the middle and two sections of first-order gratings located at the two ends; a lambda / 4 phase shift is arranged in the second-order grating; the lambda / 4 phase shift is located in an etching area or a non-etching area of the first-order grating closest to the second-order grating; when the lambda / 4 phase shift is located in the etching region of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is maximum, and the downward diffraction light power is minimum; when the lambda / 4 phase shift is located in the non-etching area of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is minimum, and the downward diffraction light power of the second-order grating is maximum. According to the invention, high-slope efficiency lasing can be realized.

The invention provides a battery monomer, a battery device and a power utilization device. The battery monomer comprises an electrode assembly, the electrode assembly comprises a positive pole piece, a negative pole piece and a non-aqueous electrolyte, the positive pole piece comprises a positive current collector and a positive active layer arranged on the positive current collector, and the positive active layer comprises a positive lithium supplementing material; the non-aqueous electrolyte comprises an electrolyte additive as shown in a formula (I). The energy density, the cycle performance and the high-temperature storage performance of the battery are improved at the same time.

The present application relates to a pixel circuit, a display panel and a display device, wherein the pixel circuit includes: a driving transistor, a threshold compensation transistor and a shielding layer; the threshold compensation transistor includes a first sub-threshold compensation transistor and a second sub-threshold compensation transistor; the active layer of the threshold compensation transistor includes a first sub-channel region, a second sub-channel region and a first connection region; the first sub-channel region and the second sub-channel region are electrically connected through the first connection region; in a direction perpendicular to the active layer, the first sub-channel region at least partially overlaps with the gate of the first sub-threshold compensation transistor, and the second sub-channel region at least partially overlaps with the gate of the second sub-threshold compensation transistor, and the overlapping area A of the first connection region and the shielding layer satisfies: the present application can maintain the stability of the gate potential of the driving transistor and solve the problem of low-frequency flickering of the display panel.

The invention discloses a perovskite precursor solution containing substituted aromatic ring group sulfonic acid, which comprises a perovskite material, an additive and an organic solvent, the additive is aromatic ring group sulfonic acid with a substituent group or a salt thereof, the aromatic ring is a benzene ring, a naphthalene ring or a pyrene ring, and the substituent group is one or more of H, halogen, C1-C4 alkenyl and C1-C4 alkyl. Polycyclic aromatic hydrocarbon (such as benzene, naphthalene and pyrene) is used as a framework, one sulfonic acid group instead of a sulfonyl group is introduced, and uncoordinated type defect passivation is realized through bonding with Pb < 2 + >; meanwhile, the electron push-pull characteristic of the substituent group is utilized, the Lewis acid-base amphoteric property is exerted, passivation of various types of defects is achieved, anchoring and passivation of multiple sites are achieved, the defects of the perovskite active layer can be remarkably reduced, non-radiative recombination can be reduced, and the performance and stability of the prepared perovskite solar cell in the large-scale preparation process are further improved.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.