78 results about "Charge carrier mobility" patented technology

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

This invention relates to the field of display technology, specifically to an organic electroluminescent compound and its applications. An organic electroluminescent compound has the structure shown in formula (1). Based on the structure of formula (1), further limiting the types of substituents can improve the structural stability of the compound. Furthermore, the HOMO and LUMO energy levels of the organic electroluminescent compound have a high degree of matching with adjacent energy levels, resulting in a more balanced carrier mobility. Consequently, organic electroluminescent devices containing this organic electroluminescent compound exhibit lower driving voltage, higher luminous efficiency, and longer lifetime.

The present application relates to the technical field of display, in particular to an organic compound and application thereof. The organic compound provided by the present application is connected with arylamine containing a benzoxazole structure by limiting the structure of the parent nucleus of formula (1), and the overall compound shows high stability and high hole transport performance by matching different substituent groups, the matching degree of HOMO and LUMO energy levels and adjacent energy levels is high, and then the carrier mobility of the organic compound with the specific structure is more balanced, so that the organic electroluminescent device containing the organic compound has low driving voltage, high luminous efficiency and long service life.

The application provides a CMOS device and a preparation method thereof, the CMOS device comprising a GaN HEMT device and a diamond PMOS device arranged in a vertical direction, and an isolation layer arranged between the GaN HEMT device and the diamond PMOS device; the GaN HEMT device comprising a GaN layer, an AlGaN layer, a first source, a first gate and a first drain, the diamond PMOS device comprising a hydrogen-terminated diamond layer, a second source, a second drain and a second gate; the first gate and the second gate are arranged in correspondence in the vertical direction and are electrically connected through a first metal filling hole extending in the vertical direction; the first drain and the second drain are arranged in correspondence in the vertical direction and are electrically connected through a second metal filling hole extending in the vertical direction. The COMS device provided by the application has high carrier mobility, low power consumption and high heat dissipation performance, and can reduce parasitic resistance, parasitic capacitance and parasitic inductance, and improve integration density.

This application discloses a driving substrate and a display panel. The driving substrate includes a substrate, a first gate, a buffer layer, an active layer, a gate insulating layer, a second gate, an interlayer dielectric layer, a source, and a drain. The active layer includes a first active sublayer and a second active sublayer sequentially disposed on the buffer layer. The band gaps of the first and second active sublayers are different. Since the active layer includes a first active sublayer and a second active sublayer with different band gaps, the first and second active sublayers form a heterojunction. Due to the bending of the band gap at the heterojunction interface, a two-dimensional electron gas is formed at the contact interface between the first and second active layers. The two-dimensional electron gas is confined to move within a two-dimensional plane, thereby reducing the scattering effect of ionized impurity centers and thus exhibiting good transport properties, effectively improving the carrier mobility of the driving substrate.

The application relates to the field of transistors, in particular to a graphene transistor and a manufacturing method thereof, wherein the graphene transistor comprises a substrate, an electric conductive layer and a gate structure are arranged on the substrate, a first drain and a second drain are arranged on the electric conductive layer and electrically connected through the electric conductive layer; a first source and a second source are arranged on the substrate and electrically connected through the substrate, the first source is opposite to the first drain, the gate structure is located between the first drain and the first source, a graphene channel layer is arranged between the first drain and the first source, a plurality of convex strips are arranged on the top of the gate structure, the plurality of convex strips are horizontally and parallelly arranged, and gaps exist between adjacent convex strips; and the graphene channel layer is located on the convex strips on the top of the gate structure. Through the scheme, the problem of low carrier mobility of the graphene transistor is solved.

This application provides a thermal conductive agent, its preparation method, and an elastomer. The preparation method includes: providing graphene material, an oxidant, and a polymer material; mixing the graphene material and the oxidant in a certain proportion to obtain a mixture; subjecting the mixture to mechanochemical treatment, cleaning, and drying to obtain edge-hydroxylated graphene; mixing the edge-hydroxylated graphene with the polymer material in a certain proportion and performing an exfoliation process to obtain the thermal conductive agent. Using the preparation method provided in this application, the oxidant can capture electrons from the edge carbons of the graphene under the action of mechanical energy, introducing hydroxyl functional groups at the edges of the graphene sheets. This improves the compatibility of graphene and the polymer material during subsequent exfoliation, while maintaining the complete π-π conjugated structure in the middle of the graphene, which is beneficial for the transport of electrons and phonons, giving the thermal conductive agent high thermal conductivity, high carrier mobility, and excellent mechanical strength.

This invention discloses a stable perovskite material based on DMePDA additive and its preparation method. The method involves introducing the diamine cation DMePDAI2 into the FAMAPbI3 system to construct a DJ-type quasi-two-dimensional perovskite structure. Due to the presence of diamine double-terminal —NH3 in the system… + Bonding to inorganic layers eliminates van der Waals gaps in the RP structure and shortens interlayer spacing, effectively weakening the quantum confinement of the material, thus suppressing ion migration while maintaining effective charge transport. This invention utilizes different material ratios in the perovskite system to establish DMePDA (FA) 0.5 MA 0.5 ) n‑1 Pb n I 3n +1 By controlling the n-value of the material to create a network, the carrier mobility of the high-n-through-network is significantly improved. X-ray detectors fabricated using this material exhibit extremely low dark current density and excellent X-ray sensitivity under low / medium bias. This invention achieves a comprehensive improvement in the low dark current, high sensitivity, and low mobility of perovskite materials, providing a stable and scalable material and process foundation for low-dose, high-resolution X-ray imaging.

This application discloses a composite material, its preparation method, a thin film, an optoelectronic device, and a display device, relating to the field of display technology. The preparation method of the composite material includes the following steps: providing inorganic nanoparticles and free radicals; mixing the inorganic nanoparticles and the free radicals to obtain the composite material. The composite material prepared by the method provided in this application exhibits high carrier mobility.

The application discloses a composite material, a film and a preparation method thereof, an optoelectronic device and a display device. The composite material comprises an organic semiconductor material and an ammonium thiocyanate salt. The composite material has a high carrier mobility.

A transistor, a semiconductor device, a method for manufacturing the same, and an electronic device are disclosed. The transistor is located on a substrate and includes: a first electrode, a second electrode, a first semiconductor layer located between the first electrode and the second electrode, a first gate insulating layer, a second gate insulating layer, and a first gate electrode; the second gate insulating layer is located between the first semiconductor layer and the first gate insulating layer, and is in contact with the semiconductor layer; the second gate insulating layer is configured to provide holes or electrons to the first semiconductor layer under the condition of an electric field applied to the transistor, thereby converting the first semiconductor layer from a first polarity type to a second polarity type; the first polarity type and the second polarity type have opposite polarities; the first semiconductor layer includes a first two-dimensional semiconductor material. The transistor and semiconductor device of this application embodiment use a two-dimensional semiconductor material to form the channel, which improves carrier mobility and reduces the influence of short-channel effects.

This invention discloses a class of porphyrin-based A-D-A type polymer photovoltaic materials, their preparation methods, and applications. The invention utilizes a porphyrin-DPP system constructed through Sonogashira coupling, placing the donor unit at the center of the A-D-A structure. This A-D-A structure more effectively enhances the intramolecular push-pull electronic effect, promoting intramolecular charge transfer and thus significantly broadening and redshifting the light absorption range of the polymer. Furthermore, the A-D-A structure facilitates more ordered and compact intermolecular stacking, promoting the expansion of π-π conjugation and potentially increasing the carrier mobility of the material. This lays the material foundation for obtaining higher short-circuit current densities and fill factors in devices.

The application belongs to the technical field of display, and particularly relates to a fused ring compound and application thereof. The fused ring compound provided by the application is based on the structure of formula (1), and the type of substituent group is further limited, so that the structural stability of the compound is improved. The HOMO and LUMO energy levels of the fused ring compound have higher matching degrees with adjacent energy levels, so that the carrier mobility of the fused ring compound is relatively balanced, and further, the organic electroluminescent device containing the fused ring compound has lower driving voltage, higher luminous efficiency and longer service life.

The application discloses a semiconductor device and a preparation method thereof, a power module, a power conversion circuit and a vehicle. The semiconductor device comprises a semiconductor body, the semiconductor body comprising a first surface and a second surface arranged oppositely; the semiconductor body comprises a core region, the semiconductor body of the core region further comprising at least one well region and a first region, the first region being located at the first surface, and the well region being located at a side of the first region away from the first surface; a repair buffer layer is located at the first surface or extends from the first surface into the semiconductor body; the repair buffer layer comprises a first opening, and the first opening exposes the first region; a gate structure is located at a side of the repair buffer layer away from the semiconductor body; and the gate structure comprises a gate insulating layer and a gate. The application can effectively solve the problem of low carrier mobility of the device.

Forces applied to the channel regions of semiconductor slabs in a first direction relative to the semiconductor slab, can create strains in the crystal structure that improve carrier mobility to improve drive strength in the channel region. In a three-dimensional (3D) FET structure, a work function metal layer is provided on opposing faces of semiconductor slabs to cause a force to be exerted on the channel regions in a first direction corresponding to current flow. The force in the first direction is either tensile force or compressive force, depending on a FET type (N or P) employing the semiconductor slab, and is provided to create strain in a crystalline structure of the semiconductor slab to improve carrier mobility in the channel region. Increasing carrier mobility in the channel regions in a 3D FET structure increases drive strength of the 3D FET, which saves area in an integrated circuit.

The present application provides a thin film transistor and a display panel. An active layer of the thin film transistor includes at least two semiconductor layers stacked. Conductivity types of channel regions of adjacent two of the semiconductor layers are same. Doping concentrations of same elements in semiconductor materials of the adjacent two of the semiconductor layers are different. A homotypic heterostructure is formed after the adjacent two of the semiconductor layers contact, thereby improving a mobility of carriers.

This invention relates to the field of display technology, specifically to an organic electroluminescent compound and its applications. An organic electroluminescent compound has the structure shown in formula (1). Based on the structure of formula (1), the HOMO and LUMO energy levels of the organic electroluminescent compound have a high degree of matching with adjacent energy levels, resulting in a more balanced carrier mobility. Consequently, organic electroluminescent devices containing this organic electroluminescent compound exhibit lower driving voltage, higher luminous efficiency, and longer lifetime.

This application discloses a composite thin film and its preparation method, an optoelectronic device, and a display device. The composite thin film includes a first carrier transport layer, a first grating layer, and a second carrier transport layer stacked sequentially. The first grating layer includes a plurality of spaced metal strips. The composite thin film of this application has a low carrier mobility.

This invention proposes a low-cost, high-efficiency co-sputtering technique for magnesium-hydrogen co-doped indium zinc oxide (IZO) thin-film transistors and their fabrication methods. The device is fabricated using heavily doped N-type silicon and silicon dioxide as the gate and insulating layer, respectively. A magnesium-doped IZO semiconductor channel layer is deposited using a dual-target co-sputtering method followed by hydrogen plasma treatment. Aluminum is then deposited as the electrode using DC sputtering. All deposition processes are patterned using a mask, ultimately resulting in a high-performance magnesium-hydrogen co-doped IZO thin-film transistor. This invention improves IZO defects and controls oxygen vacancy concentration by doping magnesium with an appropriate atomic concentration using dual-target co-sputtering. Hydrogen plasma treatment is used to modulate the interface defect states and carrier transport characteristics. This fabrication process not only offers advantages such as high efficiency and low cost, but also produces devices with high carrier mobility and good stability, providing a technical reference for optimizing low-cost and high-efficiency new co-doping processes.

This invention provides a palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor, its fabrication method, and its application, belonging to the field of semiconductor device technology. The palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor comprises, from bottom to top, a substrate, a vertical heterojunction, and a metal electrode; the vertical heterojunction includes a tungsten diselenide layer covering the substrate and a palladium diselenide layer covering the tungsten diselenide layer. This invention first constructs a tungsten diselenide layer on the substrate using chemical vapor deposition (CVD), and then directly grows a palladium diselenide layer on the surface of the tungsten diselenide layer using CVD. This vertical heterojunction field-effect transistor exhibits excellent performance with high saturation current density, high carrier mobility, and a high current on / off ratio, solving the technical problem of low performance and incompatibility with two-dimensional n-type semiconductor field-effect transistors in current two-dimensional p-type semiconductor devices.

The application relates to the technical field of organic photoelectricity, and particularly discloses a bipolar photoelectric material and application thereof, the bipolar photoelectric material has the following general formula: in the general formula, R1 is hydrogen, an aromatic hydrocarbon and derivatives thereof, an electron-donor carbazole and derivatives thereof, a phenoxazine and derivatives thereof, or an acridine and derivatives thereof; R2 is an aromatic hydrocarbon and derivatives thereof, an electron-donor carbazole and derivatives thereof, a phenoxazine and derivatives thereof, or an acridine and derivatives thereof; and R3 is an aromatic hydrocarbon and derivatives thereof, an electron-donor carbazole and derivatives thereof, a phenoxazine and derivatives thereof, or an acridine and derivatives thereof; the hydrogen in R1 can be partially replaced by deuterium or fully replaced by deuterium or not replaced by deuterium; the bipolar photoelectric material is introduced with a diphenyl sulfone thiophene sulfoxide electron-deficient group as a light-emitting unit and an electron-withdrawing unit in a molecular structure, the introduction of the group can improve the carrier mobility of the material, is beneficial to charge balance, and is further beneficial to obtaining high light-emitting efficiency.

This disclosure discloses a P-type tunneling passivation structure and its preparation method, as well as a solar cell and its preparation method, belonging to the field of solar cell technology. The boron-doped polycrystalline silicon layer in the P-type tunneling passivation structure provided by this disclosure has a high crystallinity and better passivation effect, which is beneficial for improving carrier mobility, reducing contact resistance, and thus improving cell efficiency.

This invention discloses a method for preparing a composite poly-Si thin film, comprising: depositing and growing an intrinsic poly-Si thin film on a single-crystal silicon substrate using a vertical double-layer hot-wire array thermal field design and a high-temperature hot-wire silane pyrolysis technique; and introducing trace amounts of NH3 or N2O gas to generate Si in situ. x N y or SiO x N y A quantum dot barrier layer is formed by introducing a doping source, PH3 or B2H6, for in-situ doping to obtain a doped source layer. The grown poly-Si thin film with the composite structure is then annealed using vacuum rapid annealing or laser annealing to activate the doping source and promote crystal growth. This process produces a poly-Si thin film with a composite structure of "intrinsic layer + barrier layer + doped layer," which improves carrier mobility and reduces parasitic absorption. This structure shows promising application prospects for developing photovoltaic cells and optoelectronic devices.

The application provides a wide band gap device lower SST multi-port energy routing adaptive optimization method, comprising: according to the change characteristics of the device junction temperature distribution, the material defect density of the wide band gap device and the multi-port coupling effect of the solid state transformer are jointly analyzed, the electric field abnormal area when the overload protection mechanism is triggered is judged through the real-time comparison of the electric field stress threshold; according to the distribution of the insufficient heat management performance area, combining the electromagnetic interference level of the solid state transformer and the carrier mobility of the wide band gap device, the distributed electric field balancing technology is used to dynamically adjust the port voltage stability, and the corrected power conversion efficiency distribution is obtained; through the corrected power conversion efficiency distribution, the interaction characteristics between the breakdown electric field strength of the wide band gap device under high stress and the dynamic load response of the solid state transformer are analyzed, and the voltage imbalance risk point caused by the multi-port coupling effect is judged by using the real-time data fusion technology.

This invention belongs to the field of semiconductor device technology, specifically relating to an amorphous gallium oxide-based thin-film transistor direct-type X-ray detector and its fabrication method. First, it utilizes the high-gain characteristics of a three-terminal thin-film transistor structure to lower the detection limit and improve the signal-to-noise ratio. Second, it designs a stacked channel structure formed by a front channel layer and a back channel layer, combining the high carrier mobility of the front channel layer to enhance the lateral carrier transport capability and improve charge collection efficiency, thereby increasing the device's sensitivity and response speed. Furthermore, embedding source / drain electrodes between the front and back channel layers further improves the lateral carrier collection efficiency of the source / drain electrodes.

This application discloses a composite thin film, an optoelectronic device, and a display device, relating to the field of display technology. The composite thin film includes a first film layer and a second film layer stacked together. The first film layer is made of inorganic nanoparticles, and the second film layer is made of a titanate coupling agent containing sulfur and / or phosphorus. The composite thin film provided in this application exhibits high carrier mobility.