673 results about "Charge carrier mobility" patented technology

The invention provides a power management chip high-low side driving signal time sequence optimization method and system. The method comprises the following steps: acquiring temperature data of a power management chip under a switch switching transient working condition through an infrared thermal imaging technology, and synchronously acquiring three-dimensional temperature field distribution of junction temperatures on the surface and inside a packaging layer; based on the space continuity of a temperature field, extracting the temperature change characteristics of a power device area, converting the temperature gradient into Seebeck voltage by using a thermoelectric material embedded in a hot spot area, and constructing a dynamic thermoelectric feedback network; according to Seebeck voltage data, a coupling relation between hot carrier concentration and driving signal phase deviation is established, and disturbance of hot carrier mobility change on MOSFET switching delay is quantified; the rising / falling edge slope of the grid voltage is adjusted based on the coupling relation, the phase deviation caused by the hot carrier effect is eliminated through dynamic compensation, and the switching performance is optimized. The dynamic response precision of the power management chip is improved.

The invention discloses a lithium iron phosphate positive electrode material and a preparation method and application thereof, and belongs to the technical field of lithium iron phosphate positive electrode materials. The lithium iron phosphate positive electrode material comprises a lithium iron phosphate matrix and a carbon coating layer coating the surface of the lithium iron phosphate matrix, the average standard deviation of the thickness of a carbon coating layer in the lithium iron phosphate positive electrode material is # imgabs0 #, and sigma (d) is more than or equal to 0.05 nm and less than or equal to 0.35 nm; the average standard deviation of the carbon content in the lithium iron phosphate positive electrode material is sigma (Cwt%), and sigma (Cwt%) is larger than or equal to 0.02 wt% and smaller than or equal to 0.35 wt%. The lithium iron phosphate positive electrode material has a uniform carbon coating layer, and the thickness of the carbon coating layer and the carbon content at each position are relatively consistent, so that the improvement of the carrier mobility of the lithium iron phosphate positive electrode material is facilitated, and the further improvement of the electrochemical performance of a battery prepared from the lithium iron phosphate positive electrode material is facilitated.

The invention discloses an organic electroluminescent compound and a luminescent device. The organic electroluminescent compound has a structure as shown in a formula (1). In the structure of the N-type compound provided by the invention, an electron-rich group formed by carbazole and phenyl connected with the carbazole is substituted by deuterium, and the deuterated P-type compound in the core region is matched, so that the chemical stability, photoelectric stability and thermal stability of the structure of the luminescent material can be effectively improved, the stability of a luminescent device using the material is further improved, and the service life of the luminescent device is prolonged; meanwhile, the N-type compound and the deuterated P-type compound in the core area can form a good Premix material, good P / N stability and mass production stability are achieved in the evaporation process, the formed Premix material has more balanced carrier mobility, the efficiency of a device is greatly improved, and the service life of the device is greatly prolonged. And # imgabs0 #.

The invention provides an endangered animal monitoring method based on a multi-mode floating gate type photoelectric synapse transistor, realizes multi-mode fusion of images (optical signals) and sounds (electric signals) by utilizing the light absorption capability of quantum dots and the high carrier mobility of a two-dimensional channel material, and belongs to the technical field of sensing, storage and calculation integration and endangered animal identification and monitoring. According to the method, a photoelectric synapse device is used as a reservoir, and input time sequence signals are respectively applied to a multi-mode fused photoelectric synapse transistor in the form of light and electric pulse. And along with the co-stimulation of light and electric pulse, the change response of source-drain current is generated, and the fusion processing of the multi-mode signal is realized. By adopting the method, a human multi-sensory fusion signal processing mode is successfully simulated, and accurate recognition under complex and changeable conditions can be realized by utilizing a mode of complementation of visual signals and auditory signals. Under an extreme environment or a high noise condition, edge processing and identification can be carried out on pictures and sounds of endangered animals, and a high-accuracy monitoring result can be obtained without a large amount of data return, so that the energy consumption is reduced and the monitoring efficiency is enhanced.

The embodiment of the invention relates to a method and a device for processing a charge carrier mobility prediction model. The method comprises the following steps of: constructing a prediction model for predicting charge carrier mobility according to two input molecular sequences, and recording the prediction model as a corresponding first prediction model; performing model training on the first prediction model based on a preset first data set; after the model training is finished, receiving a molecule pair sequence list input by a user; and performing batch prediction processing on the molecular pair sequence list based on the first prediction model to obtain a corresponding batch prediction report and feeding back the batch prediction report to the user. When the first prediction model provided by the invention is applied to the design process of organic semiconductor material molecules, the design period can be shortened, and the design efficiency can be improved.

The invention discloses a doped material based on a hexagonal boron nitride / titanium dioxide heterojunction and a preparation method thereof. According to the material, a heterojunction is formed by hexagonal boron nitride and titanium dioxide, and the light absorption performance, the carrier mobility and the photocatalytic efficiency are optimized by doping a nitrogen element, an iron element and a fluorine element; wherein the doped nitrogen element can reduce a band gap by introducing a defect energy level, and broaden a light absorption range to a visible light region and an infrared light region; the doped iron element can promote carrier separation by introducing an intermediate energy level; the doped fluorine element can inhibit carrier recombination by reducing surface defects. The light absorption efficiency of the material in the ultraviolet light range can be improved by constructing the layered # imgabs0 # heterojunction composite material, and the migration rate of electrons and holes can be improved by doping the N element, the Fe element and the F element in the # imgabs1 #, so that the oxidation-reduction reaction is promoted, and reference significance is provided for further improving the application effect of a photocatalyst in sewage treatment.

The invention relates to the technical field of ITO coating materials, and provides a low-sheet-resistance and high-light-transmittance ITO coating film and a preparation method thereof.The preparation method comprises the steps that S1, an yttrium-doped zirconium oxide substrate is prepared; s2, performing surface activation on the yttrium-doped zirconium oxide substrate; s3, performing magnetron sputtering in a radio frequency magnetron sputtering chamber, and forming a layer of ITO film on the surface of the yttrium-doped zirconia substrate; and S4, annealing treatment and gradient cooling treatment are carried out. The epitaxial growth of the ITO coating film is optimized through the prepared yttrium-doped zirconia substrate, and the magnetron sputtering, annealing and gradient cooling processes are combined, so that the microstructure of the film is optimized, the carrier mobility and the uniformity and stability of the film are improved, the grain boundary defect and carrier scattering loss in the ITO coating film are reduced, and the performance of the film is improved. The low sheet resistance and high light transmittance of the ITO coating film are synergistically improved, and the obtained ITO coating film has important application value in the fields of high-performance optoelectronic devices, transparent conductive films and the like.

The invention relates to the field of crystal detection, and discloses a multifunctional comprehensive scintillation crystal and semiconductor material energy spectrum test system, which comprises a crystal adaptation module for judging the type and size of a placed crystal through an optical identification and parameter matching mechanism, and a signal acquisition module for amplifying, filtering and digitally processing an acquired signal, the signal correction module is used for correcting waveform distortion and baseline drift through a dynamic gain adjustment algorithm of a low-noise pre-amplifier and a multi-channel pulse analyzer; the data analysis module is used for generating an energy spectrum curve according to input signals and calculating energy resolution, counting rate, light attenuation time or carrier mobility, and the environment calibration module is used for dynamically evaluating shading degree, environment light, temperature and electromagnetic interference through an optical sensor and a temperature and humidity detector in the camera obscura and outputting updated calibration parameters. The method has the advantages of improving the detection efficiency, precision and consistency.

The invention relates to a compound and an organic light-emitting device, in particular to a novel organic light-emitting material, and synergistic improvement of various excellent properties is achieved through careful design of a molecular structure. Because deuteration is carried out on active sites of respective structures, the compounds have good thermal stability, chemical stability and photoelectric stability. Meanwhile, the compound has good carrier mobility, an exciton recombination region is further widened, the service life of a device is prolonged, and the efficiency of the device is improved. And # imgabs0 #.

The invention discloses a perovskite solar cell based on diamine molten salt surface modification and a preparation method thereof, and the perovskite solar cell comprises a transparent conductive substrate layer, a hole transport layer, a perovskite light absorption layer, a surface modification layer, an electron transport layer, an interface buffer layer and an electrode layer from bottom to top. Or a transparent conductive substrate layer, an interface buffer layer, a surface modification layer, a perovskite light absorption layer, a hole transport layer and an electrode layer, wherein the surface modification layer is diamine molten salt. According to the invention, the surface of the perovskite cell is modified by using diamine molten salt, and by inducing a gradient energy band structure and ordered arrangement of molecules, optimizing charge transfer and realizing interface energy band alignment, compact stacking of a perovskite film is promoted, grain boundary defects are reduced, and the surface roughness is reduced; the light capture capability and the charge carrier mobility of the perovskite thin film are remarkably improved, and a new thought is provided for the development of a high-efficiency and high-stability perovskite solar cell.

The invention discloses a method for measuring the intrinsic carrier mobility of a semiconductor material, and relates to the technical field of semiconductor material performance measurement. The method comprises the following steps: establishing a measurement system for the intrinsic carrier mobility of the semiconductor material; using an optical delay line to continuously change the relative time delay between the probe light and the pump light, obtaining the light intensity of the probe light under the action of the pump light and without the action of the pump light, testing to obtain a transient reflection dynamic spectrum of the semiconductor material, and extracting to obtain a Brillouin oscillation signal; calculating an electron deformation potential, a hole deformation potential and a semiconductor material elastic modulus based on the Brillouin oscillation signal; and calculating the intrinsic carrier (electron and hole) mobility of the semiconductor material based on the electron deformation potential, the hole deformation potential and the elastic modulus of the semiconductor material. Aiming at the lack of a method for experimentally measuring the intrinsic carrier mobility of a material at present, the measurement method disclosed by the invention fills the blank in the field.

The invention discloses a P-type tellurium oxide thin film field effect transistor and a preparation method thereof. The transistor is provided with a bottom gate top contact structure. The preparation method comprises the following steps: firstly, cleaning the silicon / silicon dioxide substrate, then depositing a tellurium oxide film as the semiconductor active layer by using a metal mask and an electron beam evaporation method, and finally preparing a layer of nickel with the thickness of about 50nm on the active layer by using the mask to serve as the source electrode and the drain electrode. Compared with a traditional tellurium oxide transistor, the tellurium oxide transistor prepared by the method has the advantages that the carrier mobility and the switching ratio are obviously improved, and the hysteresis effect can be ignored. The electrical performance of the tellurium oxide transistor with the bottom gate top contact structure is improved, and the tellurium oxide transistor has the advantages of being low in cost and simple in process step.

A display panel and a manufacturing method therefor, and a display apparatus. The display panel comprises a base substrate, a pixel define layer located on the base substrate, and a light-emitting functional layer located on the side of the pixel define layer away from the base substrate. The pixel define layer comprises a defining portion for defining a pixel opening. The light-emitting functional layer comprises carrier layers, wherein the carrier layers are consecutive and cover the pixel define layer. Each carrier layer comprises a first area and a second area except the first area, wherein the orthographic projection of the first area on a first surface of the base substrate is located in the orthographic projection of the defining portion on the first surface of the base substrate, and the carrier mobility of the first area is smaller than the carrier mobility of the second area. The present application can prevent a crosstalk current from being formed between adjacent sub-pixels of the display panel.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a channel structure of a first type of crystalline orientation (e.g., <110> or <111>) and the GAA NFET(s) include a channel structure of a second type of crystalline orientation (e.g., <100>) different from the first type of crystalline orientation of the GAA PFET(s). The different crystalline orientation channels improve the balance of carrier mobility for both carrier types (i.e., P-type and N-type) of GAA FETs in the GAA FET device. In one aspect, the different crystalline orientation channels are provided through a substrate to increase and / or balance carrier mobility between GAA PFET(s) and NFET(s) to achieve a more balanced drive strength between these types of transistors.

The invention discloses a strained silicon MOS device on a fully-depleted insulator and a preparation method thereof, the device comprises an SOI substrate, the upper surface of the SOI substrate is sequentially provided with a shallow groove channel isolation region, a first epitaxial groove, a second epitaxial groove and a second shallow groove channel isolation region along a first direction, the shallow groove channel isolation region comprises an isolation filling material, the epitaxial groove is internally provided with an epitaxial layer, and the first epitaxial groove and the second epitaxial groove are communicated with each other; a source electrode / drain electrode is arranged on the epitaxial layer; the substrate between the epitaxial grooves is a strained silicon layer, a gate oxide layer is arranged on the upper surface of the strained silicon layer, and a gate is arranged on the upper surface of the gate oxide layer; the thermal expansion coefficient of the isolation filling material is different from that of the strained silicon layer, and the lattice constant of the epitaxial layer material is different from that of the strained silicon layer. According to the invention, two uniaxial compressive stresses from different sources are introduced into the channel region of the MOS device, so that the carrier mobility can be improved, and the performance of the MOS device is improved.

The invention relates to a dimer non-fullerene acceptor molecule based on a pyrone-ring lock structure, preparation of the dimer non-fullerene acceptor molecule and application of the dimer non-fullerene acceptor molecule as an acceptor photovoltaic material, and belongs to the technical field of organic solar cell materials. An A-D-A '-D-A type dimer non-fullerene acceptor molecule is designed and synthesized based on a pyrone structure, A is an electron withdrawing unit, D is an electron donating unit, and A' is an electron withdrawing unit based on the pyrone structure. The dimer molecule has a structural general formula I shown in the specification. Wherein EG is selected from conjugated groups with electron withdrawing capability, Ar is selected from conjugated groups with electron donating capability, and X is selected from hydrogen atoms or halogen. The dimer acceptor molecule shows a small dihedral angle, which is beneficial to accumulation between molecules, so that the material has high carrier mobility. The dimer acceptor molecule with the pyrone structure shows obviously improved stability under illumination and attack of a nucleophilic reagent, and the organic solar cell device shows good photoelectric conversion efficiency.

The invention provides a junction-free transistor, which comprises a substrate, and a buried oxide layer, a core layer and a shell layer which are sequentially stacked on the substrate, the doping concentration of the shell layer is smaller than that of the core layer, the shell layer is provided with a grid electrode, and the size of the shell layer in a first direction along the surface of the substrate is larger than that of the grid electrode in the first direction, that is, the size of the shell layer in the first direction is smaller than that of the grid electrode. Compared with the condition that the size of the shell layer in the first direction is equal to the size of the grid electrode in the first direction, the size of the shell layer in the first direction is increased in the scheme, so that carriers in a channel are less acted by a source leakage field and are almost only controlled by a grid electrode electric field, and when the device starts, due to the fact that the doping concentration of the shell layer is low or the shell layer is not doped, the performance of the device is improved. Therefore, the carrier mobility is high, the device can have lower off-state current and higher on-state current, and the performance of the device is improved.

The invention belongs to the technical field of photovoltaic target materials, and particularly relates to an indium titanium cerium niobium oxide ceramic target material, a preparation method and application thereof, and a transparent conductive oxide film. The indium titanium cerium niobium oxide ceramic target material comprises the following components: indium oxide, titanium oxide, cerium oxide and niobium oxide, the mass ratio of indium oxide to titanium oxide to cerium oxide to niobium oxide is 97-99: 1-0.3: 1-0.3: 1-0.2, the transparent conductive oxide film has high density, high purity and high strength, and the transparent conductive oxide film prepared from the transparent conductive oxide film has high carrier mobility, high conductivity and high light transmittance.

The invention relates to the technical field of display, in particular to a deuterated oxazole ring organic compound and application thereof. The deuterated oxazole ring organic compound provided by the invention has the following general formula structure: # imgabs0 # is based on the structure of a formula (1), and deuterium atoms are introduced into the compound as shown in the formula (1), so that the stability of the organic compound can be effectively improved, and the service life of a device is further prolonged; the position of the deuteration is further limited, so that the HOMO and LUMO energy levels of the organic compound are well matched with adjacent energy levels, the carrier mobility is well balanced, and the device has the advantages of low voltage and high efficiency while having long service life; in conclusion, the deuterated oxazole ring organic compound provided by the invention has excellent properties, so that the prepared organic light-emitting device has the characteristics of low driving voltage, high light-emitting efficiency and long service life.

Disclosed is a thin-film transistor substrate in which carrier mobilities of active layers of a first thin-film transistor and a second thin-film transistor which require different characteristics are set to be different from each other, thereby satisfying both the different characteristics required for the first and second thin-film transistors having different functions. Further, a display device including the thin-film transistor substrate is disclosed.

The invention relates to a compensation polarization doped aluminum nitride Schottky diode and a manufacturing method thereof. The compensation polarization doped aluminum nitride Schottky diode comprises a substrate, an unintentionally doped AlN layer, a Si doped AlN layer and a Si compensation doped Al component slowly-decreasing layer from bottom to top. The surface of the Si-doped AlN layer is in Schottky contact with the anode of the diode; the Si compensation doped Al component slowly-decreasing layer is from AlN to Al < x > Ga < 1-x > N from bottom to top, the value range of x is 0-0.3, and ohmic contact is formed between the Si compensation doped Al component slowly-decreasing layer and the cathode of the diode. According to the aluminum nitride Schottky diode, through compensation polarization doping, the metal contact performance is improved, the problems that the material surface is rough and the carrier mobility is low due to impurity doping are solved, and the Schottky diode with the high potential barrier and the low ideal factor is achieved.

The invention discloses a two-dimensional organic-inorganic hybrid perovskite and molybdenum diselenide heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a substrate; the electrode layer is positioned on one side of the substrate; the photoelectric conversion part is arranged on the side, away from the substrate, of the electrode layer, and materials of the photoelectric conversion part comprise two-dimensional organic and inorganic hybrid perovskite (C6H13NH3) 2PbI4 (C6PI), molybdenum diselenide (MoSe2) and a protective layer hexagonal boron nitride (h-BN). According to the invention, by constructing the heterostructure, the advantages of high absorption coefficient and extremely low dark current of the two-dimensional perovskite material and the advantages of high carrier mobility and wide light response range of the two-dimensional transition metal disulfide are combined, so that the performance of the photoelectric detector is improved to a great extent; the method has good performance in the aspects of light response rate, response time, response range and the like.

The invention relates to the technical field of kits, in particular to a MoS2 back gate field effect transistor based on a wet transfer process and a preparation method of the MoS2 back gate field effect transistor. The MoS2 back gate field effect transistor is formed by sequentially arranging a silicon-based substrate, a SiO2 insulating layer, a MoS2 conducting channel layer and an Ag source drain electrode from bottom to top; a high-quality single-layer MoS2 thin film is prepared through a chemical vapor deposition (CVD) method, PMMA is adopted as a supporting layer, clean Van der Waals contact of the MoS2 thin film and a SiO2 / Si substrate is achieved through a wet transfer process of NaOH solution etching, deionized water cleaning and acetone stripping of the supporting layer, and finally a source electrode and a drain electrode are prepared by combining photoetching and thermal evaporation processes. According to the method, the problems of pollutant residues and traps of an interface between MoS2 and the substrate in the traditional process are effectively solved, the carrier mobility, transconductance and on-state current of the device are remarkably improved, the sub-threshold swing is reduced, and the method is suitable for manufacturing a two-dimensional material integrated circuit device with low power consumption and high performance.

The invention relates to a field effect transistor and a preparation method thereof, and the field effect transistor comprises an insulating substrate, a two-dimensional material Bi2O2Se channel layer which grows on the insulating substrate in situ, a first electrode and a second electrode which are arranged on the two-dimensional material Bi2O2Se channel layer, a two-dimensional material MoO3 layer which is arranged on the two-dimensional material Bi2O2Se channel layer, and a third electrode which is arranged on the two-dimensional material MoO3 layer, the two-dimensional material MoO3 layer completely covers the two-dimensional material Bi2O2Se channel layer; the width of a depletion region of the Bi2O2Se channel layer is controlled through voltage applied to the MoO3 layer, so that the switching function of the transistor is achieved, a good sub-threshold characteristic is obtained, meanwhile, due to the high carrier mobility characteristic of the two-dimensional Bi2O2Se material, a remarkable electrical response can be obtained only by applying small source and drain voltage, and the performance of the transistor is improved. And excellent sub-threshold characteristics and conduction current performance are presented.

The present application provides a junctionless transistor, comprising a substrate (100), and a buried oxide layer (110), a core layer (150), and a shell layer (160) sequentially stacked on the substrate (100). The doping concentration of the shell layer (160) is less than the doping concentration of the core layer (150), a gate (170) is provided on the shell layer (160), and the dimension of the shell layer (160) in a first direction parallel to the surface of the substrate (100) is greater than the dimension of the gate (170) in the first direction. Compared with a scenario where the dimension of the shell layer (160) in the first direction is equal to the dimension of the gate (170) in the first direction, in the present application, the dimension of the shell layer (160) in the first direction is increased, so that charge carriers in a channel are less influenced by source-drain electric fields and are controlled almost exclusively by a gate electric field. During device operation, due to the low doping concentration or absence of doping in the shell layer (160), the charge carrier mobility is high, and therefore, the device can have a lower off-state current and a higher on-state current, thereby improving the device performance.

The invention discloses a preparation method of a thin film transistor. The core of the preparation method is to construct a quasi-double-channel structure. Taking an insulating layer of the thin film transistor as a first metal oxide, and processing the surface of the insulating layer to obtain an oxygen-deficient surface; depositing a second metal oxide on the anoxic surface as a channel layer; a metal-oxygen bond of the insulating layer is higher than a metal-oxygen bond of the channel layer; and after the deposition of the second metal oxide is finished, a two-dimensional oxygen-deficient surface is spontaneously formed on the contact surface of the insulating layer and the channel layer through annealing treatment, so that the thin film transistor with the quasi-double-channel structure is obtained. Compared with a traditional thin film transistor, the thin film transistor has the advantages that the positive bias voltage stability and the negative bias voltage stability are obviously improved, and meanwhile, the mobility is greatly improved. The invention has the characteristics of high carrier mobility, small threshold voltage drift and high long-term working reliability, and is simple in preparation process and low in cost. The quasi-double-channel structure is expected to be widely applied to oxide thin film transistors.

The utility model discloses a quantum dot light emitting diode, a display substrate and a display device. The quantum dot light-emitting diode comprises a first electrode, a second electrode, and a quantum dot light-emitting layer, a first electron transport layer and a second electron transport layer which are arranged between the first electrode and the second electrode, wherein the first electron transport layer and the second electron transport layer are sequentially arranged on one side, close to the second electrode, of the quantum dot light-emitting layer; wherein the first electron transport layer and the second electron transport layer are made of inorganic nanoparticles, the conduction band bottom energy level of the first electron transport layer is matched with the conduction band bottom energy level of the quantum dot light-emitting layer, and the conduction band bottom energy level of the second electron transport layer is larger than the work function of the second electrode and smaller than the conduction band bottom energy level of the first electron transport layer; the carrier mobility of the second electron transport layer is greater than that of the first electron transport layer, and the second electron transport layer is configured to adjust the length of the optical microcavity between the first electrode and the second electrode.

The invention belongs to the technical field of organic photoelectricity, and particularly relates to a polymer material containing a dithiazolobenzothiophene structural unit and application of the polymer material in an organic solar cell. The polymer material has a molecular structure as shown in formula (I), and substituent groups are described in the specification. According to the invention, a dithiazolobenzothiophene unit is used as an electron withdrawing unit to be introduced into the polymer to construct a broad-band gap donor material, and the polymer material has good crystallinity and donor-acceptor compatibility at the same time, and can obtain relatively high carrier mobility and photovoltaic performance; when the material is applied to organic solar cells, the energy conversion efficiency (PCE) can exceed 19%, and the material has a good application prospect. # imgabs0 #

The invention belongs to the technical field of temperature sensing, and discloses a quick-response heat flow ceramic film temperature sensor and a preparation method thereof, an Hf doped In2O3 (IHFO) ceramic film is selected as a thermoelectric arm to be in contact with the In2O3 ceramic film to form a thermocouple type temperature sensor, and a hard mask is combined with a magnetron sputtering process to prepare the temperature sensor. The thermal stability of the structure of indium oxide is reserved, oxygen vacancies in the indium oxide thin film are compensated, the defect density is reduced, meanwhile, the carrier concentration is reduced, and the carrier migration rate is increased; a traditional mode of improving the monitoring temperature by sacrifice materials is replaced by regulating and controlling the crystal structure and the defect density, the thickness of the thin film is reduced, array integration of the sensor is promoted, and shortening of the response time of the device is promoted through high carrier mobility.