429 results about "Charge carrier mobility" patented technology

The invention provides a power management chip high-low side driving signal time sequence optimization method and system. The method comprises the following steps: acquiring temperature data of a power management chip under a switch switching transient working condition through an infrared thermal imaging technology, and synchronously acquiring three-dimensional temperature field distribution of junction temperatures on the surface and inside a packaging layer; based on the space continuity of a temperature field, extracting the temperature change characteristics of a power device area, converting the temperature gradient into Seebeck voltage by using a thermoelectric material embedded in a hot spot area, and constructing a dynamic thermoelectric feedback network; according to Seebeck voltage data, a coupling relation between hot carrier concentration and driving signal phase deviation is established, and disturbance of hot carrier mobility change on MOSFET switching delay is quantified; the rising / falling edge slope of the grid voltage is adjusted based on the coupling relation, the phase deviation caused by the hot carrier effect is eliminated through dynamic compensation, and the switching performance is optimized. The dynamic response precision of the power management chip is improved.

The invention relates to the field of crystal detection, and discloses a multifunctional comprehensive scintillation crystal and semiconductor material energy spectrum test system, which comprises a crystal adaptation module for judging the type and size of a placed crystal through an optical identification and parameter matching mechanism, and a signal acquisition module for amplifying, filtering and digitally processing an acquired signal, the signal correction module is used for correcting waveform distortion and baseline drift through a dynamic gain adjustment algorithm of a low-noise pre-amplifier and a multi-channel pulse analyzer; the data analysis module is used for generating an energy spectrum curve according to input signals and calculating energy resolution, counting rate, light attenuation time or carrier mobility, and the environment calibration module is used for dynamically evaluating shading degree, environment light, temperature and electromagnetic interference through an optical sensor and a temperature and humidity detector in the camera obscura and outputting updated calibration parameters. The method has the advantages of improving the detection efficiency, precision and consistency.

The invention discloses a P-type tellurium oxide thin film field effect transistor and a preparation method thereof. The transistor is provided with a bottom gate top contact structure. The preparation method comprises the following steps: firstly, cleaning the silicon / silicon dioxide substrate, then depositing a tellurium oxide film as the semiconductor active layer by using a metal mask and an electron beam evaporation method, and finally preparing a layer of nickel with the thickness of about 50nm on the active layer by using the mask to serve as the source electrode and the drain electrode. Compared with a traditional tellurium oxide transistor, the tellurium oxide transistor prepared by the method has the advantages that the carrier mobility and the switching ratio are obviously improved, and the hysteresis effect can be ignored. The electrical performance of the tellurium oxide transistor with the bottom gate top contact structure is improved, and the tellurium oxide transistor has the advantages of being low in cost and simple in process step.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention provides a junction-free transistor, which comprises a substrate, and a buried oxide layer, a core layer and a shell layer which are sequentially stacked on the substrate, the doping concentration of the shell layer is smaller than that of the core layer, the shell layer is provided with a grid electrode, and the size of the shell layer in a first direction along the surface of the substrate is larger than that of the grid electrode in the first direction, that is, the size of the shell layer in the first direction is smaller than that of the grid electrode. Compared with the condition that the size of the shell layer in the first direction is equal to the size of the grid electrode in the first direction, the size of the shell layer in the first direction is increased in the scheme, so that carriers in a channel are less acted by a source leakage field and are almost only controlled by a grid electrode electric field, and when the device starts, due to the fact that the doping concentration of the shell layer is low or the shell layer is not doped, the performance of the device is improved. Therefore, the carrier mobility is high, the device can have lower off-state current and higher on-state current, and the performance of the device is improved.

The invention relates to the technical field of kits, in particular to a MoS2 back gate field effect transistor based on a wet transfer process and a preparation method of the MoS2 back gate field effect transistor. The MoS2 back gate field effect transistor is formed by sequentially arranging a silicon-based substrate, a SiO2 insulating layer, a MoS2 conducting channel layer and an Ag source drain electrode from bottom to top; a high-quality single-layer MoS2 thin film is prepared through a chemical vapor deposition (CVD) method, PMMA is adopted as a supporting layer, clean Van der Waals contact of the MoS2 thin film and a SiO2 / Si substrate is achieved through a wet transfer process of NaOH solution etching, deionized water cleaning and acetone stripping of the supporting layer, and finally a source electrode and a drain electrode are prepared by combining photoetching and thermal evaporation processes. According to the method, the problems of pollutant residues and traps of an interface between MoS2 and the substrate in the traditional process are effectively solved, the carrier mobility, transconductance and on-state current of the device are remarkably improved, the sub-threshold swing is reduced, and the method is suitable for manufacturing a two-dimensional material integrated circuit device with low power consumption and high performance.

The present application provides a junctionless transistor, comprising a substrate (100), and a buried oxide layer (110), a core layer (150), and a shell layer (160) sequentially stacked on the substrate (100). The doping concentration of the shell layer (160) is less than the doping concentration of the core layer (150), a gate (170) is provided on the shell layer (160), and the dimension of the shell layer (160) in a first direction parallel to the surface of the substrate (100) is greater than the dimension of the gate (170) in the first direction. Compared with a scenario where the dimension of the shell layer (160) in the first direction is equal to the dimension of the gate (170) in the first direction, in the present application, the dimension of the shell layer (160) in the first direction is increased, so that charge carriers in a channel are less influenced by source-drain electric fields and are controlled almost exclusively by a gate electric field. During device operation, due to the low doping concentration or absence of doping in the shell layer (160), the charge carrier mobility is high, and therefore, the device can have a lower off-state current and a higher on-state current, thereby improving the device performance.

The invention discloses a preparation method of a thin film transistor. The core of the preparation method is to construct a quasi-double-channel structure. Taking an insulating layer of the thin film transistor as a first metal oxide, and processing the surface of the insulating layer to obtain an oxygen-deficient surface; depositing a second metal oxide on the anoxic surface as a channel layer; a metal-oxygen bond of the insulating layer is higher than a metal-oxygen bond of the channel layer; and after the deposition of the second metal oxide is finished, a two-dimensional oxygen-deficient surface is spontaneously formed on the contact surface of the insulating layer and the channel layer through annealing treatment, so that the thin film transistor with the quasi-double-channel structure is obtained. Compared with a traditional thin film transistor, the thin film transistor has the advantages that the positive bias voltage stability and the negative bias voltage stability are obviously improved, and meanwhile, the mobility is greatly improved. The invention has the characteristics of high carrier mobility, small threshold voltage drift and high long-term working reliability, and is simple in preparation process and low in cost. The quasi-double-channel structure is expected to be widely applied to oxide thin film transistors.

The utility model discloses a quantum dot light emitting diode, a display substrate and a display device. The quantum dot light-emitting diode comprises a first electrode, a second electrode, and a quantum dot light-emitting layer, a first electron transport layer and a second electron transport layer which are arranged between the first electrode and the second electrode, wherein the first electron transport layer and the second electron transport layer are sequentially arranged on one side, close to the second electrode, of the quantum dot light-emitting layer; wherein the first electron transport layer and the second electron transport layer are made of inorganic nanoparticles, the conduction band bottom energy level of the first electron transport layer is matched with the conduction band bottom energy level of the quantum dot light-emitting layer, and the conduction band bottom energy level of the second electron transport layer is larger than the work function of the second electrode and smaller than the conduction band bottom energy level of the first electron transport layer; the carrier mobility of the second electron transport layer is greater than that of the first electron transport layer, and the second electron transport layer is configured to adjust the length of the optical microcavity between the first electrode and the second electrode.

According to the composition for the organic optoelectronic device and the organic optoelectronic device provided by the invention, a ternary GH system mode is adopted, i.e., a double P-type material is matched with a single N-type material to form a main body material, so that the injection of current carriers is improved, and meanwhile, the material is ensured to have relatively high current carrier mobility; and the efficiency and the service life of the device are improved.

A transistor structure may be formed in an interconnect layer (e.g., a backend region) of a semiconductor device. The transistor structure is formed such that an interfacial layer is included between a gate dielectric layer and an oxide-semiconductor channel layer of the transistor structure. The interfacial layer provides a substrate on which the oxide-semiconductor channel layer may be formed to have a particular crystal lattice structure to achieve greater charge carrier mobility in the oxide-semiconductor channel layer than without the interfacial layer. Additionally and / or alternatively, the interfacial layer may prevent or reduce the likelihood of contamination from oxygen (O2) and / or hydrogen (H2) from the gate dielectric layer and other layers surrounding the transistor structure.

The invention discloses a rare bismuth II type superlattice material and a preparation method thereof. The superlattice material has an InAs (Bi) / GaSb or InAs (Bi) / InAsSb superlattice structure formed by alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers, and the InAs (Bi) layers are formed by introducing Bi elements into the InAs layers. The preparation method of the superlattice material comprises the following steps: (1) selecting an InSb, InAs or GaSb substrate, performing thermal cleaning on the substrate at 500 DEG C, and cleaning the substrate by using atomic hydrogen in an ultrahigh vacuum environment; (2) alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers by utilizing a molecular beam epitaxial growth technology, and finally growing a GaSb layer or InAsSb layer as a stop layer, (3) carrying out rapid thermal annealing treatment at the temperature of 380-420 DEG C; the time is 0.5 to 1 min; and (4) characterizing the photoluminescence property of the superlattice. According to the invention, the strain distribution and the energy band structure of the material are obviously improved, the more flexible wavelength regulation and control capability is realized, the hole effective quality is reduced, and the carrier mobility and the quantum efficiency are improved.

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

The present application provides a display panel and a display device. The display panel includes a plurality of pixel units, each pixel unit includes a plurality of sub-pixels, and the plurality of sub-pixels are divided into a first type of sub-pixels and a second type of sub-pixels. The brightness life of the first type of sub-pixels is shorter than the brightness life of the second type of sub-pixels. Each sub-pixel includes a cathode, an anode, and a light-emitting layer and a carrier transport layer located between the cathode and the anode. In addition, the carrier mobility of the carrier transport layer of the first type of sub-pixel is different from the carrier mobility of the carrier transport layer of the second type of sub-pixel. By adjusting the carrier mobility, the brightness difference between sub-pixels of different types can be reduced, and the problem of display color cast can be improved.

This invention relates to the field of display technology, specifically to an organic electroluminescent compound and its applications. An organic electroluminescent compound has the structure shown in formula (1). Based on the structure of formula (1), further limiting the types of substituents can improve the structural stability of the compound. Furthermore, the HOMO and LUMO energy levels of the organic electroluminescent compound have a high degree of matching with adjacent energy levels, resulting in a more balanced carrier mobility. Consequently, organic electroluminescent devices containing this organic electroluminescent compound exhibit lower driving voltage, higher luminous efficiency, and longer lifetime.

The application provides a power management chip high-low side driving signal timing optimization method and system. Wherein, the method collects temperature data of the power management chip under switching transient working condition by infrared thermal imaging technology, synchronously obtains three-dimensional temperature field distribution of the surface and internal junction temperature of the packaging layer; based on the spatial continuity of the temperature field, the temperature variation characteristics of the power device area are extracted, and the temperature gradient is converted into the Seebeck voltage by using the thermoelectric material embedded in the hot spot area to construct a dynamic thermoelectric feedback network; the coupling relationship between the hot carrier concentration and the driving signal phase shift is established according to the Seebeck voltage data, the disturbance of the hot carrier mobility change on the MOSFET switching delay is quantified; based on the coupling relationship, the rising / falling edge slope of the gate voltage is adjusted, the phase deviation caused by the hot carrier effect is eliminated through dynamic compensation, and the switching performance is optimized. The application improves the dynamic response accuracy of the power management chip.

Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and / or a bottom surface of the rough buffer layer is / are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).

A field effect transistor and a manufacturing method thereof, wherein the field effect transistor comprises: a source (13), a drain (14) and a gate (12); a channel region (11) is provided between the source (13) and the drain (14); an inner isolation layer (110) is provided between the gate (12) and the source (13) and between the gate (12) and the drain (14); the inner isolation layer (110) covers a portion of the channel region (11), wherein the inner isolation layer (110) includes donor impurities or acceptor impurities. The structure can reduce the on-resistance of the channel region (11) of the field effect transistor and maintain high carrier mobility in the channel region (11), thereby improving the performance of the field effect transistor.

The invention provides a graphene transistor sensor and a preparation method and application thereof, and belongs to the technical field of biosensors. The graphene transistor sensor is used for noninvasive detection of depression and can detect depression-related markers in body fluids such as sweat, urine and saliva through noninvasive collection. According to the invention, a biosensing chip is constructed by using a graphene transistor array modified by gold nanoparticles, and simultaneous monitoring of multiple biomarkers can be realized by fixing different aptamers; the response speed and the sensitivity of the sensor are improved by utilizing the ultrahigh carrier mobility of the single-layer graphene with the quasi-single-crystal structure, and high-precision accurate detection is realized when the concentration of a biomarker is relatively low; the gold nanoparticle layer is used for fixing the aptamer of the target biomolecule, the coverage rate of the gold nanoparticles can be regulated and controlled by limiting the thickness of the gold film, more active sites are provided, the detection range can be expanded, and the detection requirement for continuously and dynamically monitoring the concentration change of the biomarker is met.

The invention relates to a composite material, a solar cell and a preparation method and application of the solar cell. The composite material comprises a metal organic framework and polyimide in coordination connection with the metal organic framework, preparation raw materials of the polyimide comprise aromatic dianhydride and aromatic diamine, and at least one of the aromatic dianhydride and the aromatic diamine contains a fluorine group and carboxyl. The composite material is applied between a perovskite layer and an electron transport layer of a solar cell, the stability and the electron transport capacity are improved, interface defects are reduced, and therefore the photoelectric conversion efficiency and the carrier mobility of the solar cell are improved.

The embodiment of the invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor body, wherein the semiconductor body comprises a first surface, a second surface, a well region, a first region, a first groove and a second groove; the first groove comprises a first sub-groove and a second sub-groove which are communicated with each other; the second groove is at least located between the well region and the first groove; a first insulating layer; a shield gate; the first isolation layer is located in the second sub-groove, and the vertical projection of the first isolation layer on the second surface covers the vertical projection of the shielding grid electrode on the second surface and the vertical projection of the first insulation layer on the second surface; the stress providing layer is located on the side wall of the second groove; the strain layer is positioned on one side, away from the well region, of the stress providing layer; the stress providing layer is used for providing stress for the strain layer and improving the carrier mobility in the strain layer; a second insulating layer; a control gate; a source electrode; and a drain electrode. According to the technical scheme of the embodiment of the invention, the channel carrier mobility can be improved, and the channel resistance can be reduced.

The application provides a display panel and a display device. The display panel comprises an array substrate and a light-emitting device layer. The light-emitting device layer is arranged on the array substrate. The light-emitting device layer comprises an anode layer, a functional layer, a light-emitting layer and a cathode layer. A first shielding layer is arranged in the light-emitting device layer. The first shielding layer is arranged between a first functional unit and a second functional unit of the functional layer. The first shielding layer separates the first functional unit and the second functional unit. The carrier mobility of the first shielding layer is small, so that the lateral leakage current between the first functional unit and the second functional unit is blocked. Therefore, the display panel can prevent crosstalk and ghosting, and the display effect of the display panel is improved.

The invention relates to the technical field of quantum dot material performance detection, in particular to a transient photoelectric detection method for the aging degree of a quantum dot display screen material. Comprising the following steps: repeating multiple groups of excitation tests, calibrating core photoelectric parameters of an unaged standard sample and constructing a dynamic threshold library, and performing synchronous photoelectric signal acquisition and real-time compensation correction on a to-be-detected sample in a controlled environment; the collected transient signals are corrected, and three core parameters of fluorescence decay lifetime, transient current peak and carrier mobility are extracted; dynamically adjusting the threshold weight according to the quantum dot type and the use environment, comparing the extraction parameter with the dynamic threshold, judging the non-aging grade and the aging grade according to the comparison result, and generating a judgment report; through the mode, the signal acquisition quality is improved, and the actual requirements of high precision, high efficiency and nondestructive testing are met.

The invention discloses a compound and an organic electroluminescent device. The compound has a structure as shown in a formula 1. On the basis of an existing carbazole-arylamine material, the structure of the compound is improved, deuteration is introduced to a special position matched with a core area, the optimized compound has good stability, meanwhile, the carrier mobility is further improved, the service life of a device is guaranteed, and compared with the closest prior art, the material has the advantages that the efficiency is high, and the cost is low. And the luminous efficiency of the device is improved. Meanwhile, compared with the existing perdeuterated carbazole-arylamine material, on the basis that the use effect of the material basically reaches the level of the prior art, the design scheme of introducing the deuterated carbazole-arylamine material has better economic benefit and use value. Formula 1.

The application discloses a TCO film preparation method, which comprises the following steps: sequentially performing H2, N2 and O2 three-step annealing on a substrate after depositing a TCO target material, and through the timing design of "reduction-buffering-passivation", the H2 atmosphere can effectively activate oxygen vacancies to improve the carrier mobility of the TCO film, the N2 atmosphere can improve the buffer environment to promote the grain growth in the annealing process, prevent the cross contamination between H2 and O2, improve the passivation effect of the O2 atmosphere, and thus improve the conductivity, light transmittance and structural stability of the TCO film.

The invention provides a hydrogen interstitial doped strontium titanate material and a preparation method thereof, the hydrogen interstitial doped strontium titanate material is prepared by doping a hydrogen element into a strontium titanate single crystal through a solid-phase reaction, and the hydrogen element is introduced into a strontium titanate lattice interstitial site by using sodium borohydride as a hydrogen source. According to the hydrogen gap doped strontium titanate material disclosed by the invention, the carrier concentration is obviously increased, the absorption of the material in a range from visible light to infrared light is enhanced by doping, and the photon utilization rate is improved. Compared with heavy metal displacement doping and hydrogen ion gap doping, the carrier mobility is not damaged, environmental protection is easy, the cost is low, doping conditions are not harsh, and large-scale industrial production is easy.

The present application relates to the technical field of display, in particular to an organic compound and application thereof. The organic compound provided by the present application is connected with arylamine containing a benzoxazole structure by limiting the structure of the parent nucleus of formula (1), and the overall compound shows high stability and high hole transport performance by matching different substituent groups, the matching degree of HOMO and LUMO energy levels and adjacent energy levels is high, and then the carrier mobility of the organic compound with the specific structure is more balanced, so that the organic electroluminescent device containing the organic compound has low driving voltage, high luminous efficiency and long service life.

The present application relates to a kind of compound containing nitrogen heterocyclic structure and organic electroluminescent device.The active site of compound deuterium or aryl substitution improves the chemical stability, photoelectric stability and thermal stability of compound, improves the stability of device, and further improves the life.Can form good Premix material with the P-type compound of the present application, has good P / N stability and mass production stability in the process of evaporation, and the Premix material formed has more balanced carrier mobility, and then the efficiency and life of device are greatly improved.The material of the present application all has excellent solubility, can effectively solve the problem of hole blocking of production line and the problem of Mask cleaning difficulty, while the preparation and recovery cost of material can be greatly reduced.

The invention discloses a self-adaptive direct connection prevention double-N-type output driving circuit which comprises a first control circuit, a second control circuit, an output driving stage upper tube, an output driving stage lower tube, a diode D1, a resistor R1 and a resistor R2. The output driving stage upper tube MN1 and the output driving stage lower tube MN2 are NMOS (N-channel metal oxide semiconductor) tubes; the first control circuit is used for controlling the output driving stage upper tube to be conducted when a first time sequence signal CLK is valid; and the second control circuit is used for controlling the output driving stage lower tube to be switched on in a time delay manner when the first time sequence signal CLK is invalid. In the invention, the switch-on time and the switch-off time of the two channels can be respectively controlled by adjusting the resistor R1 and the resistor R2, and an NMOS tube with higher carrier mobility is used as a pull-up tube, so that the current pull-up capability is stronger; and self-adaptive conduction of the output driving stage upper tube and the output driving stage lower tube is formed, so that the high-speed GaN power tube driver can be suitable for a high-speed GaN power tube driver.

The invention relates to the technical field of organic electroluminescence display, in particular to an efficient OLED display device and a preparation method thereof. According to the preparation method of the efficient OLED display device, the carrier mobility of the prepared OLED display device is improved by 12.4 times compared with that of a traditional device through fluorine hydroxylation modification of polyimide, bifunctional liquid crystal molecules and a synergistic process, the highest current efficiency is 92 cd / A, the service life reaches 13200 h, and the modified polyimide is good in solubility, is suitable for solution processing, and can be applied to the field of organic light emitting diode display devices, such as organic light emitting diode display devices, organic light emitting diode display devices, organic light emitting diode display devices, organic light emitting diode display devices, organic light emitting diode display devices and organic light emitting diode display devices. Equipment transformation is not needed, and the industrialization value is high.