11results about How to "Increase drive current" patented technology

The invention provides a thin film transistor and a manufacturing method thereof, an array substrate and a display panel. The manufacturing method of the thin film transistor comprises the steps of providing a substrate; preparing a metal oxide active layer on one side of the substrate; preparing a first insulating layer on one side, far away from the substrate, of the metal oxide active layer; preparing a gate on one side, away from the substrate, of the first insulating layer; and injecting ions at least comprising fluorine elements into the first injection region and the second injection region. The fluorine-containing ions are injected into the first injection region and the second injection region to form the source region and the drain region respectively, and the carrier concentration is improved and the conductor resistance of the source and the drain is reduced by utilizing the strong electronegativity of the fluorine element, so that the on-state driving current of the thin film transistor is improved, and the device performance is improved.

The application discloses a TBC battery and a preparation method thereof. The TBC battery comprises a substrate and a P-zone assembly arranged on the back of the substrate. The P-zone assembly comprises a first electrode, a first tunneling silicon oxide layer, a boron-doped polysilicon layer and a first passivation layer which are sequentially stacked on the back of the substrate. The first electrode penetrates through the first passivation layer and the boron-doped polysilicon layer. The P-zone assembly further comprises a tunneling silicon nitride layer arranged between the first tunneling silicon oxide layer and the boron-doped polysilicon layer. The tunneling silicon nitride layer is used to block the boron element in the boron-doped polysilicon layer from being precipitated to the first tunneling silicon oxide layer. The application inhibits the precipitation of the boron element in the boron-doped polysilicon layer through the silicon nitride layer, enhances the passivation effect, and further improves the final conversion efficiency and reliability of the battery.

A gate drive circuit adapted to high junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal transistor, a turn-off circuit, and an auxiliary circuit. The added auxiliary circuit generates an auxiliary current signal, either in the same direction or opposite to the control signal current, to the control electrode of the main three-terminal transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control electrode of the three-terminal transistor. During the conduction process, the auxiliary circuit can generate a reverse auxiliary current signal at the control electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.

The application provides a two-dimensional multi-bridge channel transistor with self-aligned source-drain doping and a preparation method thereof. The two-dimensional multi-bridge channel transistor comprises a substrate and a plurality of channel structures arranged on the substrate. Each of the plurality of channel structures comprises a gate metal layer arranged on the substrate, a first high-k gate dielectric layer arranged around the first gate metal layer, a low-k gate dielectric layer arranged around the side surface of the first high-k gate dielectric layer, and a two-dimensional semiconductor material layer arranged on the high-k gate dielectric layer and the low-k gate dielectric layer, wherein part of the two-dimensional semiconductor material is induced to phase change into a two-dimensional semimetal / metal material layer by a solid source doping source. According to the two-dimensional multi-bridge channel transistor and the preparation method thereof, the source-drain contact resistance is reduced, the low-k sidewall process compatible with the two-dimensional semiconductor integrated circuit is realized, the parasitic is reduced, and the speed of the transistor is improved.

This application provides a CMOS device and its fabrication method, relating to the field of semiconductor technology. The method includes providing a substrate; sequentially depositing a buffer film layer and a tensile stress film layer on the substrate surface; irradiating the tensile stress film layer in an NMOS region to enhance the tensile stress of the tensile stress film layer in the NMOS region; removing the tensile stress film layer and the buffer film layer, and transferring the stress of the tensile stress film layer to the NMOS region; forming a source region and a drain region in a PMOS region to form a PMOS transistor located in the PMOS region, wherein the source region and drain region of the PMOS transistor are respectively formed in the PMOS regions on both sides of a first gate structure. Irradiating the tensile stress film layer in the NMOS region reduces the hydrogen content of the tensile stress film layer in the NMOS region, enhances the tensile stress of the tensile stress layer in the NMOS region, and alleviates the impact of tensile stress on the PMOS region. The method is simple, does not require multiple tensile stress layer growth and removal, and reduces costs.

This application provides a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate, a source electrode, a drain electrode, and a channel structure disposed on one side of the substrate. The channel structure is located between the source electrode and the drain electrode. The channel structure includes a stack of multiple nanosheets, a gate electrode surrounding the nanosheets, and a cavity. The cavity is located at least between the channel structure and the substrate. The cavity is formed by the channel structure, the source electrode, the drain electrode, and the substrate surrounding the cavity. In other words, the cavity is located below the channel structure, the source electrode, and the drain electrode, without any contacting film layers, thus forming a fully floating structure. This can significantly improve the gate control performance of the semiconductor device, reduce the subthreshold swing of the semiconductor device, reduce leakage current and parasitic capacitance, increase the drive current, and improve the performance of the semiconductor device.

The present application provides a complementary metal oxide semiconductor (CMOS) field effect device, comprising a substrate; a first n-type doped S / D region and a second n-type doped S / D region; a first p-type doped S / D region and a second p-type doped S / D region; a first channel layer disposed above the substrate, the first channel layer comprising a first sub-layer and a second sub-layer; wherein the first and second n-type doped S / D regions are disposed on a first side of the first channel layer, and the first and second p-type doped S / D regions are disposed on a second side of the first channel layer, the second side being opposite to the first side; wherein an energy of a conduction band edge of the first sub-layer is lower than an energy of a conduction band edge of the second sub-layer; and wherein an energy of a valence band edge of the first sub-layer is lower than an energy of a valence band edge of the second sub-layer; and a gate structure adjacent to the first sub-layer and the second sub-layer of the first channel layer.

The invention provides a semiconductor device, electronic equipment and a preparation method of the semiconductor device. Relates to the technical field of semiconductors. The semiconductor device comprises a P-type transistor, the P-type transistor comprises a first electrode, a second electrode, a channel, a grid electrode and a grid electrode side wall, and the first electrode comprises boron; in addition, the semiconductor device further comprises a first film layer and a dielectric barrier layer, the first film layer is located on the first electrode, the first film layer comprises boron, and the boron content in the first film layer is larger than that in the first electrode; the surface of the substrate comprises a first region located on the periphery of the first pole, the first region can correspond to a channel of the P-type transistor, and at least part of the first region is covered by the dielectric barrier layer. Boron in the first film layer can be inhibited from diffusing into a channel of the P-type transistor by using the dielectric barrier layer. Therefore, the hole mobility of the channel layer can be improved, and the driving circuit of the P-type transistor is improved.

The embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate and a plurality of memory cell transistors on the substrate. Each memory cell transistor comprises a nanosheet group, the nanosheet group comprising a plurality of nanosheets arranged at intervals and extending along a first direction, the nanosheet comprising a channel region; a gate layer covering a plurality of channel regions of the nanosheet group; the first direction is parallel to a surface of the substrate; and a plurality of data storage elements are located on one side of the nanosheet group along the first direction, each data storage element being electrically connected to the plurality of nanosheets of one memory cell transistor.

This application provides a semiconductor device and a method for fabricating the same. The method includes: providing a substrate comprising a first region and a second region; forming a hard mask layer on the substrate to expose a field oxide layer region in the first region and an isolation region in the second region containing a portion of the isolation structure adjacent to the active region; performing an oxidation process to form a field oxide layer in the first region and a bird's beak oxide layer on the active region in the second region, the bird's beak oxide layer having a thin center and thick edges; and removing the hard mask layer and the bird's beak oxide layer to expose an active region in the second region with an upwardly curved upper surface. This application forms an upwardly curved active region without increasing process steps, and increases the effective width / length of the device without increasing the active region layout size, thereby simultaneously suppressing threshold voltage drift and increasing the device drive current, achieving high performance, low power consumption, and improved reliability.

This application provides a semiconductor structure, its manufacturing method, and an electronic device. The manufacturing method of the semiconductor structure includes: fabricating a first sacrificial structure on one side of a substrate; fabricating a second sacrificial structure; the second sacrificial structure and the first sacrificial structure having different heights and thicknesses; fabricating a first trench; exposing the second sacrificial structure and the first sacrificial structure on the sides of the first trench; fabricating a semiconductor layer; the semiconductor layer at least conformally covering the first trench; replacing the first and second sacrificial structures with a first gate structure and a second gate structure to obtain a transistor; the first gate structure includes a first gate electrically isolated from the semiconductor layer, and the second gate structure includes a second gate electrically isolated from the semiconductor layer. This application achieves a transistor with dual gates of different heights and thicknesses, which can comprehensively enhance the gate's control over the channel region, improve the channel electric field, enhance carrier transport, increase the drive current, and enable the semiconductor structure to have a high on / off ratio.