5results about How to "Increased shutdown speed" patented technology

A gate drive circuit adapted to high junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal transistor, a turn-off circuit, and an auxiliary circuit. The added auxiliary circuit generates an auxiliary current signal, either in the same direction or opposite to the control signal current, to the control electrode of the main three-terminal transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control electrode of the three-terminal transistor. During the conduction process, the auxiliary circuit can generate a reverse auxiliary current signal at the control electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.

The invention provides an RC-IGBT device structure and a manufacturing method thereof, the RC-IGBT device structure comprises a wafer, the bottom of the wafer is provided with a back metal layer, an FRD cathode and a collector electrode, the top of the wafer is provided with a cellular region, and the cellular region comprises a front metal layer, a P-Body region, a carrier storage layer, a Trench gate structure, an N-source region, a P-type deep groove region and the like. A P-Body region of an IGBT is multiplexed as an FRD anode, a P-type deep groove region penetrating into an N drift region is designed, and the layout that the back N + / P + width is accurately matched with half of the size of a front cell Pitch is matched, so that the through-current path is shortened, the conduction voltage and loss are reduced, the voltage resistance and through-current capability are improved, and meanwhile, the chip area is reduced. The RC-IGBT structure solves the problems of low cell density, large area and high loss of an existing RC-IGBT, meets the requirements of a power system for small size, high power density, low loss and high efficiency, and has remarkable technical innovation and application value.

The application provides a starting system applied to a to-be-started device. The starting system comprises a processor and a positive connection detection module. The to-be-started device comprises a positive electrode and a negative electrode. The processor is electrically connected to the positive connection detection module. The positive connection detection module comprises a first detection submodule and a first transistor. The first detection submodule is used for detecting whether the positive electrode and the negative electrode receive an electric signal. When the first detection submodule detects that the positive electrode is connected to a positive electric signal and the negative electrode is connected to a negative electric signal, a positive connection electric signal is generated. The first detection submodule transmits the positive connection electric signal to the processor through the first transistor, so that the processor enters a normal working state. The first transistor has the characteristics of fast opening and fast closing. The positive connection electric signal is transmitted to the processor, the interrupt control can be quickly responded, and the abnormality of the starting system caused by the incorrect connection of the power supply is prevented, so that the safety and reliability of the starting process are greatly improved. The application further provides a battery car.

The invention discloses a self-adaptive soft turn-off circuit of a power switch device, and relates to the technical field of electronic circuits, the self-adaptive soft turn-off circuit comprises a turn-off control module, a detection module, an energy storage delay module and a soft turn-off execution module, and the detection module and the energy storage delay module are connected in series and then are connected between a drain electrode and a source electrode of the power switch device. The detection module, the energy storage delay module and the power switch device form a drain-source electrode loop, and the energy storage delay module is controlled to store energy or discharge when a comparison result of drain-source electrode voltage and a preset safety threshold value in the turn-off process of the power switch device. And dynamically adjusting the resistance value of the soft turn-off resistor connected to the grid electrode of the power switch device according to energy storage or discharge, and adjusting the turn-off speed of the power switch device. A control signal is generated through energy storage, the resistance value of a soft turn-off resistor connected into a grid electrode of a power switch device is dynamically adjusted, the turn-off speed of the power switch device is reduced, and therefore voltage spikes are restrained.

The utility model provides a kind of relay quick cut-off drive circuit, belong to power electronics technical field. Including control unit, power supply unit, first switch unit, first resistance, second resistance, PNP triode, first relay and first unidirectional conducting unit, the power supply unit has the emitter of connecting the PNP triode, the collector of the PNP triode is connected the first relay input end, the first relay output end is connected between the first switch unit and first resistance. The base of the PNP triode is connected between the first resistance and second resistance, the first unidirectional conducting unit is parallel in first relay both ends, the first unidirectional conducting unit is from first relay output end to first relay input end unidirectional conduction. When applied to STS, the cut-off speed of relay can be improved, finally realizes the quick disconnection of inverter INV and power grid GRID.