12results about How to "Increased shutdown speed" patented technology

The present invention relates to the technical field of integrated circuits, and provides a PMOS driving circuit and a driving device. The PMOS driving circuit comprises: a level shifting module, a buffer module, an intermediate voltage generating module and a boosting module; the boosting module has an input end connected to an external power supply end, and an output end connected to the power supply end of the level shifting module, the power supply end of the buffer module and the input end of the intermediate voltage generating module respectively; the voltage of the output end of the boosting module is greater than the voltage of the external power supply end, and the difference between the voltage of the output end of the boosting module and the voltage of the external power supply end is a preset voltage, so that the gate-source voltage Vgs of the PMOS tube when it is turned off is increased from 0V to a preset voltage value, so that the gate-source voltage Vgs of the PMOS tube when it is turned off is far away from the threshold voltage of the PMOS tube, and the turn-off speed of the PMOS tube is effectively improved.

The utility model relates to the technical field of electronics, in particular to a fast turn-off overvoltage protection circuit, which can improve the turn-off speed of overvoltage protection, and comprises a partial voltage detection circuit used for providing detection voltage; the comparison control circuit is used for comparing the detection voltage with the set voltage by using double comparators to obtain a switching signal; and a power supply switching circuit for switching off or conducting the power supply by the switching signal.

The invention discloses a control circuit, a switching power supply, a power supply system and a power distribution system, and the control circuit comprises a first biasing circuit which is used for controlling a field-effect tube to be conducted; the turn-off circuit is used for controlling the field effect transistor to be turned off when the current in the field effect transistor flows from the drain electrode to the source electrode, and comprises a second bias circuit, a first bipolar transistor and a compensation circuit, the other end of the second biasing circuit, the base electrode of the first bipolar transistor and the first end and the second end of the compensating circuit are connected to a first node, the collector electrode of the first bipolar transistor is connected with the grid electrode of the field-effect transistor, the emitter electrode is connected with the source electrode of the field-effect transistor, and the third end of the compensating circuit is connected with the drain electrode of the field-effect transistor; the compensation circuit is used for compensating the voltage between the source electrode and the drain electrode of the field effect transistor and the voltage between the base electrode and the emitter electrode of the first bipolar transistor. The field effect transistor is low in conduction voltage drop and high in turn-off speed, and the efficiency and applicability of a switching power supply and a power distribution system are improved.

A gate drive circuit adapted to high junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal transistor, a turn-off circuit, and an auxiliary circuit. The added auxiliary circuit generates an auxiliary current signal, either in the same direction or opposite to the control signal current, to the control electrode of the main three-terminal transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control electrode of the three-terminal transistor. During the conduction process, the auxiliary circuit can generate a reverse auxiliary current signal at the control electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.

The invention provides an RC-IGBT device structure and a manufacturing method thereof, the RC-IGBT device structure comprises a wafer, the bottom of the wafer is provided with a back metal layer, an FRD cathode and a collector electrode, the top of the wafer is provided with a cellular region, and the cellular region comprises a front metal layer, a P-Body region, a carrier storage layer, a Trench gate structure, an N-source region, a P-type deep groove region and the like. A P-Body region of an IGBT is multiplexed as an FRD anode, a P-type deep groove region penetrating into an N drift region is designed, and the layout that the back N + / P + width is accurately matched with half of the size of a front cell Pitch is matched, so that the through-current path is shortened, the conduction voltage and loss are reduced, the voltage resistance and through-current capability are improved, and meanwhile, the chip area is reduced. The RC-IGBT structure solves the problems of low cell density, large area and high loss of an existing RC-IGBT, meets the requirements of a power system for small size, high power density, low loss and high efficiency, and has remarkable technical innovation and application value.

The application provides a starting system applied to a to-be-started device. The starting system comprises a processor and a positive connection detection module. The to-be-started device comprises a positive electrode and a negative electrode. The processor is electrically connected to the positive connection detection module. The positive connection detection module comprises a first detection submodule and a first transistor. The first detection submodule is used for detecting whether the positive electrode and the negative electrode receive an electric signal. When the first detection submodule detects that the positive electrode is connected to a positive electric signal and the negative electrode is connected to a negative electric signal, a positive connection electric signal is generated. The first detection submodule transmits the positive connection electric signal to the processor through the first transistor, so that the processor enters a normal working state. The first transistor has the characteristics of fast opening and fast closing. The positive connection electric signal is transmitted to the processor, the interrupt control can be quickly responded, and the abnormality of the starting system caused by the incorrect connection of the power supply is prevented, so that the safety and reliability of the starting process are greatly improved. The application further provides a battery car.

The invention discloses a self-adaptive soft turn-off circuit of a power switch device, and relates to the technical field of electronic circuits, the self-adaptive soft turn-off circuit comprises a turn-off control module, a detection module, an energy storage delay module and a soft turn-off execution module, and the detection module and the energy storage delay module are connected in series and then are connected between a drain electrode and a source electrode of the power switch device. The detection module, the energy storage delay module and the power switch device form a drain-source electrode loop, and the energy storage delay module is controlled to store energy or discharge when a comparison result of drain-source electrode voltage and a preset safety threshold value in the turn-off process of the power switch device. And dynamically adjusting the resistance value of the soft turn-off resistor connected to the grid electrode of the power switch device according to energy storage or discharge, and adjusting the turn-off speed of the power switch device. A control signal is generated through energy storage, the resistance value of a soft turn-off resistor connected into a grid electrode of a power switch device is dynamically adjusted, the turn-off speed of the power switch device is reduced, and therefore voltage spikes are restrained.

The invention relates to a silicon carbide plane gate MOSFET device and a manufacturing method thereof in the technical field of semiconductors. Comprising a substrate, a drain electrode formed on one end face of the substrate, an epitaxial layer formed on the other end face of the substrate, a current diffusion layer formed above the epitaxial layer, an epitaxial well region formed above the epitaxial layer, a first source contact region formed in the epitaxial well region and a second source contact region formed in the epitaxial well region, a source electrode is further arranged on the second source contact region, the source electrode is further in contact with part of the first source contact region, plane gates are arranged on the current diffusion layer and the epitaxial well region, a first base region and a second base region are arranged in the current diffusion layer, the first base region is completely arranged in the second base region, or the first base region is partially arranged in the second base region, and the second base region is arranged in the epitaxial well region. Oscillation of the device in the turn-off process can be reduced while the turn-off speed of the device is increased, the switching loss and electromagnetic interference of the device are reduced, and the problem that a traditional device cannot be balanced between the switching speed and switching oscillation is solved.

A reverse connection protection circuit and an electronic device are characterized in that the reverse connection protection circuit comprises a first driving module and a signal output module; one end of the first driving module is electrically connected with the first switch tube, the signal output module comprises a first switch element and a second switch element, the first switch element is electrically connected with the first driving module, and the second switch element is electrically connected with the MCU; if the power supply is reversely connected, the first switch element is used for outputting a first driving signal to the first driving module, and the second switch element is used for outputting a second driving signal to the MCU; the first driving module is configured to control the first switching tube to be switched off when receiving the first driving signal. According to the utility model, through mutual cooperation of the first switch element, the second switch element, the first driving module and the second driving module, when the charger is reversely connected, the circuit turn-off speed can be increased, and the battery or the charger is prevented from being damaged.

The invention provides a drive circuit for suppressing bridge arm crosstalk, which comprises a full-bridge PWM (Pulse Width Modulation) controller and two single-bridge arm drive circuits, namely a first bridge arm crosstalk suppression drive circuit and a second bridge arm crosstalk suppression drive circuit. The first bridge arm crosstalk suppression driving circuit comprises a single bridge arm driving circuit, a single bridge arm magnetic isolation high-frequency signal transmitter, a peak reduction ground bounce suppression circuit, an oscillation suppression discharge clamping circuit, a high-frequency switching device upper tube (QM1) and a high-frequency switching device lower tube (QM2); the second bridge arm crosstalk suppression drive circuit and the first bridge arm crosstalk suppression drive circuit are the same in structure, and each of the second bridge arm crosstalk suppression drive circuit and the first bridge arm crosstalk suppression drive circuit comprises an upper tube drive and a lower tube drive to form a four-way switch tube drive circuit. According to the drive circuit, forward drive pulse peak reduction and reverse ground bounce voltage oscillation suppression can be realized.

The invention discloses an IGBT (Insulated Gate Bipolar Translator) cell with a novel hole extraction structure. Low-doped N-type buried layers and low-doped P-type buried layers which are alternately distributed are introduced to the two sides of a groove, and the concentration of the N-type buried layers and two adjacent P-type areas just form an accumulation type PMOS with the threshold voltage close to 0. When the device is turned off, the PMOS in the vertical direction is opened to form a vertical hole path, and all the P-type buried layers and the Pbody are connected. According to the channel, a relatively high potential barrier of a conventional IGBT hole extraction channel is converted into a plurality of relatively low potential barriers, so that the smoothness of the hole extraction channel in energy change is improved, and the extraction speed is increased. A plurality of P-type buried layers and inversion channels in the vertical direction form a comb-shaped hole extraction structure, the area of the structure is far larger than that of a traditional IGBT cellular structure, and the hole extraction rate is improved. Compared with a traditional IGBT cell, the IGBT cell is higher in turn-off speed and lower in turn-off loss.

The utility model provides a kind of relay quick cut-off drive circuit, belong to power electronics technical field. Including control unit, power supply unit, first switch unit, first resistance, second resistance, PNP triode, first relay and first unidirectional conducting unit, the power supply unit has the emitter of connecting the PNP triode, the collector of the PNP triode is connected the first relay input end, the first relay output end is connected between the first switch unit and first resistance. The base of the PNP triode is connected between the first resistance and second resistance, the first unidirectional conducting unit is parallel in first relay both ends, the first unidirectional conducting unit is from first relay output end to first relay input end unidirectional conduction. When applied to STS, the cut-off speed of relay can be improved, finally realizes the quick disconnection of inverter INV and power grid GRID.