IGBT device drive circuit and method capable of reducing turn-off loss

Abstract

The invention discloses an IGBT device drive circuit and method capable of reducing the turn-off loss. The circuit comprises a detection module, a current drive module, a comparison module and a logic control module, wherein an input end of the logic control module is used for connecting external pulse width modulation signal and digital bit selection signal; a feedback end of the logic control module is connected with an output end of the comparison module; the input end of the current drive module is connected with the output end of the logic control module; the output end of the current drive module is used for being connected to a control end of an IGBT device; the input end of the detection module is used for being connected with the output end of the IGBT device; and the output end of the detection module is connected to the input end of the comparison module. According to the IGBT device drive circuit and method, the turn-off power loss of the IGBT device can be reduced; the device is prevented from being burnt by current and voltage overshoots caused by turn-off; meanwhile, output voltage and current of the drive circuit can be accurately controlled; the turn-off speed is increased while the turn-off overshoot voltage of the IGBT is not increased; the signal delay is relatively small; and the condition that a feedback circuit of the drive module normally works within short turn-off time of the IGBT device can be ensured.

Description

technical field [0001] The invention belongs to the field of power electronics, and more specifically relates to an IGBT device drive circuit that reduces turn-off loss. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a device composed of MOSFET (insulated gate field effect transistor, input stage) and BJT transistor (bipolar transistor, output stage). MOSFET devices have the characteristics of low driving power and fast switching speed (control and response), and bipolar devices have the characteristics of low saturation voltage and large capacity (power level is more durable), and the frequency characteristics are between MOSFETs and power transistors. Normally working in the frequency range of tens of kHz, it is the leading device of small and medium power power electronic equipment, and is widely used in inverters, lighting circuits, switching power supplies and other fields. [0003] The IGBT driver is an int...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of the prior art, the object of the present invention is to provide an IGBT device drive circuit that reduces the turn-off loss, aiming to solve the problems of large turn-off loss and electromagnetic interference when the IGBT is turned off in the prior art

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