244 results about "Voltage overshoot" patented technology

The invention provides a dynamic reconfigurable battery energy storage system balance control method and device based on PWM duty ratio modulation. Belongs to the battery system control field. Voltage information of all single batteries in the energy storage system is collected in real time, total loop current, system operation modes and temperature distribution are monitored synchronously, a controller dynamically calculates charge state values of all the single batteries based on the information, a target object to be balanced is recognized, and meanwhile a global battery consistency evaluation index is established. The method dynamically adjusts the maximum allowable equalization current and generates an equalization topology. The modulation frequency, the duty ratio spectrum amplitude and the phase distribution are adjusted through PWM, and the maximum duty ratio is limited. All the operation instruction sets take effect synchronously at the starting moment of the next equalization period. Besides, the efficiency and working condition mapping table in the historical learning library is synchronously updated to form a closed-loop self-evolution optimization mechanism, so that the balance efficiency optimization of the system in a dynamic scene is realized, and the voltage overshoot is ensured to be within a set threshold value.

The invention provides a device for inhibiting drain-source overvoltage and overcurrent through active gate drive of a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), aiming at solving the problem of voltage or current overshoot caused by circuit parasitic parameters in a high-speed switching process of the SiC MOSFET and simultaneously considering the switching speed and energy loss balance. According to the device, drain-source voltage vdc and direct-current bus voltage of the SiC MOSFET are collected to serve as feedback signals, and gate driving voltage and equivalent gate resistance are dynamically adjusted; in a key stage (a Miller plateau switching-on period and a voltage rising period switching-off period) of a switch transient state, a gate resistance network is switched through a logic control circuit, and suppression of drain current overshoot and drain-source voltage overshoot is realized. Simulation verification shows that the device can reduce voltage overshoot by 20%-30% and current overshoot by 25%-60%, only a single voltage feedback channel is needed, the cost is obviously lower than that of a traditional multi-signal acquisition active gate driving scheme, and the device is suitable for a high-efficiency SiC MOSFET power converter.

A soft start circuit of a synchronous boost DC-DC converter is used for restraining current overshoot and voltage overshoot of the synchronous boost DC-DC converter in the starting process and comprises a first soft start module and a second soft start module. The first soft start module belongs to system open-loop work, and suppresses a channel length modulation effect through the same drain end voltage of a clamping matching tube and a power upper tube, so as to obtain a precisely controlled charging current. A second soft start module belongs to system closed-loop work, and the method comprises the following steps: in the first stage, VOUT partial voltage is synchronized; in the second stage, constant-current charging is carried out; and in the third stage, the error amplifier vref rises gently through preset voltage RC charging. According to the invention, current overshoot and voltage overshoot are effectively suppressed through two soft start stages, and the starting circuit has a wide application prospect in the field of starting circuits.

The embodiment of the invention discloses a load transient enhancement circuit of a voltage mode DCDC converter, which is characterized in that a traditional 3-type compensation network is improved, a zero-point adjustable compensation network is generated by a compensation transconductance amplifier to carry out loop compensation, and then zero-point adjustment is carried out by detecting output voltage. When the output voltage exceeds the threshold due to the overshoot current, the transconductance can be increased through the change of the tail current, so that the zero point moves to the low frequency, the bandwidth can be increased, and the transient response capability is improved. According to the embodiment of the invention, a zero point adjustable compensation network is generated by adding a feedback path to compensate the loop, and the adjustable zero point is adjusted by detecting the output voltage. And when the load jumps, the bandwidth is increased to low frequency through zero point shift, so that the load response capability is enhanced, and the overshoot of the output voltage is reduced.

The invention provides a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving method and system for quantitatively suppressing a voltage overshoot peak. The method comprises the following steps of: reducing drain-source voltage of a SiC MOSFET to a voltage range which can be detected by a post-stage circuit; the output of the degraded drain-source voltage is detected, and the overshoot peak value of the drain-source voltage is maintained and output; sampling the output drain-source voltage overshoot peak value; a pulse signal is output according to the current drop stage of the turn-off of the drain-source voltage identification device; operating the PI control module to obtain an output current value of the voltage-controlled current source, and outputting a voltage value corresponding to the output current of the voltage-controlled current source; a corresponding voltage value is used as input, a pulse signal triggers a voltage-controlled current source to output, extra driving current is injected into a grid electrode of the SiC MOSFET, and voltage overshoot peaks are regulated and controlled. According to the invention, the closed-loop control of the voltage overshoot peak value is realized, the voltage overshoot peak value is quantitatively suppressed, and the reliability and efficiency are improved.

The invention discloses a control method for fast switching from heavy load to light load of an LCC resonant converter, and relates to the technical field of power electronic converter control. The method comprises the following steps: S1, building an LCC resonant converter; s2, monitoring load current in real time, and identifying a load abrupt change signal; s3, calculating coordinates of an intersection point of the current working point and the target light load trajectory according to the state trajectory model; and S4, triggering a switch tube advanced turn-off instruction at the switching point, and switching the driving system to a light load mode along the transition track. According to the invention, a specific switching period is introduced during frequency switching, so that the resonant converter can be rapidly and stably switched from a heavy-load working mode to a light-load working mode. According to the switching mode, the voltage overshoot phenomenon during load sudden change can be effectively suppressed, the response time can be shortened, and the dynamic response performance of the resonant converter can be greatly improved. Compared with a traditional scheme, the system stability is improved, and the power loss is reduced.

The invention provides a silicon carbide VDMOS with high drain voltage overshoot resistance and a preparation method thereof, and the method comprises the steps: depositing metal on the lower side surface of a silicon carbide substrate, and forming a drain metal layer; epitaxially growing on the upper side surface of the silicon carbide substrate to form a drift region; performing ion implantation on the drift region to form a first N-type region, a first drift layer and a second drift layer; a barrier layer is formed, etching and ion implantation are carried out, and a P-type well region, an N-type source region and a second N-type region are formed; re-forming a barrier layer, etching to form a second through hole, and depositing to form an insulating layer; a barrier layer is formed again, and a gate dielectric layer is formed through etching and deposition; and re-forming a barrier layer, etching, depositing metal, forming a gate metal layer and a source metal layer, and removing the barrier layer to complete preparation. The impact of drain voltage overshoot on the grid is inhibited; current from a body diode and a conducting channel of the device is equalized, heat concentration is avoided, and the reliability of the device is improved.

The invention is suitable for the technical field of voltage converters, and provides a gate drive circuit and a voltage converter. The gate driving circuit comprises a driving module, a starting control module and a first switch module, the driving module is electrically connected with the starting control module and the first switch module, the starting control module is electrically connected with the first switch module, and the driving module, the starting control module and the first switch module are used for being electrically connected with a gate of a high-side switching tube. The starting control module and the first switch module are both used for being electrically connected with the source electrode of the high-side switch tube. According to the gate drive circuit provided by the embodiment of the invention, the starting process of the high-side switching tube is controlled by stages, so that the voltage overshoot can be reduced and the electromagnetic interference and the overvoltage risk of the high-side switching tube can be effectively reduced on the premise of ensuring that the switching loss is not changed.

The invention relates to the technical field of switching power supplies, and relates to a transient response circuit, a switching converter, a chip and electronic equipment. The transient response circuit comprises a first adjusting unit, a second adjusting unit and an error amplifier, and the first adjusting unit and the second adjusting unit are both connected with the output end of the error amplifier. The first adjusting unit is used for controlling the first error voltage to be increased when the first error voltage output by the error amplifier is smaller than a first error voltage threshold value; the second adjusting unit is used for controlling the first error voltage to be increased when the first error voltage output by the error amplifier is greater than a second error voltage threshold value; the first error voltage threshold value is smaller than the second error voltage threshold value. Therefore, the problem that the load transient response circuit cannot work normally due to overshoot of the output voltage can be improved, and the stability of the circuit is further improved.

The invention discloses a deformable mirror control method and device based on voltage iterative prediction, and belongs to the field of wavefront processing control, and the method comprises the steps: completing the subaperture segmentation of distorted wavefront, and obtaining the wavefront slope of a subaperture containing noise; performing model parameter identification on the wavefront slope of the sub-aperture based on the AR model of the sub-aperture slope, obtaining the optimal prediction slope at the n moment, and obtaining the prediction voltage un at the n moment; and taking a result obtained by iteratively subtracting the predicted voltage un at the n moment and the control voltage us-1 applied at the n-1 moment as an error control signal ue, inputting the error control signal ue into a controller for processing to obtain a control voltage us at the n moment, amplifying the control voltage us by a high-voltage amplifier, and then applying the control voltage us to the correction deformable mirror. The high-order high-frequency aberration can be effectively corrected, the change of the control voltage of the deformable mirror is smoother, the voltage overshoot caused by directly applying the prediction voltage is eliminated, and the stability of a control system is improved.

The invention discloses an adjustable wide-adaptation MOSFET turn-off gate drive circuit and a drive method, and relates to the field of power electronics, and the drive circuit matches parasitic parameters of a to-be-controlled power MOSFET through parameter configuration so as to improve the applicability. In the turn-off process of the to-be-controlled power MOSFET, the circuit controls the grid voltage to be rapidly decreased at the stage higher than the Miller platform, to be kept at the Miller platform voltage during the Miller platform, to be linearly decreased at the stage from the Miller platform to the threshold voltage, and to be rapidly decreased below the threshold voltage. Through continuous fine control of grid voltage, drain-source side voltage and current track regulation and control are realized. The problems that according to an existing turn-off driving circuit, grid voltage is difficult to finely regulate and control in the turn-off process of a power MOSFET device, voltage and current tracks on the drain side and the source side of the power MOSFET cannot be finely regulated and controlled independently, the targets of low voltage overshoot and low turn-off loss are difficult to meet in the turn-off process at the same time, limited application of the power MOSFET device is difficult to achieve, and the turn-off efficiency of the power MOSFET device is low are solved. And the high power density requirement of the power electronic device is difficult to meet.

The invention discloses a constant voltage ring and constant current ring automatic switching circuit and a linear power supply, and belongs to the technical field of electrical variable adjustment. Wherein the constant voltage ring comprises a differential sampling link, a direct current bias link and an integration link; the constant current loop comprises a proportional element and an integral element. A differential sampling circuit is arranged in the constant-voltage ring to sample the output voltage of the power supply, the differential sampling circuit is matched with a direct-current bias link to provide superposed voltage for an integration link in the constant-voltage ring, the superposed voltage is compared with set voltage, the switching-in time of the constant-voltage ring is determined, and therefore the constant-current ring can be switched to the constant-voltage ring in advance, and the switching-in time of the constant-voltage ring is determined. And the problem of overshoot of the output voltage of the power supply is prevented. According to the linear power supply, in the process of switching from the constant current stage to the constant voltage stage, the output voltage can be smoothly transited to the target voltage, the condition of step-shaped rising cannot occur, and the switching process is natural and rapid.

The invention discloses a shared charging equipment instruction control system and method based on multi-mode signal fusion, particularly relates to the field of shared charging control, solves the protocol out-of-step overshoot risk, takes a handshake millisecond window as a switching-in port, and synchronously checks a digital message and a physical transient state through surge energy and thermal inertia double indexes. Locking an instruction missing risk before a driving link; the residual error-message joint judgment captures hidden abnormity in real time at a power issuing node, a rollback channel is rapidly pulled back to a safe power grade, and brand-channel mapping logic is triggered to re-plan output resources; a threshold bin dynamically tightens a threshold according to a target-actual measurement power difference, so that prediction and actual measurement are gradually fitted, and new prior is written back to a forward inference link; high-voltage overshoot and power failure of the whole row are avoided, a billing curve is completely matched with a charging curve, high turnover of a port can be kept in a passenger flow peak, the safety is integrally improved, the service life of hardware is prolonged, and the user experience is improved.

The invention discloses an input protection circuit, a circuit board and an input protection method, and relates to the technical field of electronic circuits. The input protection circuit is provided with a voltage input end and a voltage output end. The input protection circuit comprises a monitoring module and a protection module. A power supply branch is formed from the voltage input end to the voltage output end through the monitoring module and the protection module connected with the monitoring module; a first control port of the monitoring module is connected with a first receiving port of the protection module to form a first protection branch; a second control port of the monitoring module is connected with a second receiving port of the protection module to form a second protection branch; and a third control port of the monitoring module is connected with a third receiving port of the protection module to form a third protection branch. The input end is effectively protected, and the transient voltage suppression diode is prevented from being damaged by voltage overshoot; and board burning caused by large current due to capacitor short circuit is avoided.

The invention discloses a silicon carbide power module dynamic current sharing method and system, and the method comprises the steps: setting a basic layout of a multi-chip parallel silicon carbide power module, and extracting circuit parasitic parameters; setting working conditions of the silicon carbide power module, and setting bus voltage, load current and power chip switching speed; setting the maximum allowable voltage overshoot, and limiting the total capacitance value of the distributed decoupling capacitor bank according to the voltage overshoot; and according to the equivalent impedance of the parallel branches at the set switching speed after the distributed decoupling capacitor bank is added, the capacitance value of the distributed decoupling capacitor is adjusted, so that the equivalent impedance of each branch is the same. By integrating the distributed decoupling capacitors, the problem of non-uniform current distribution in the traditional parallel connection technology is solved, and the method has important theoretical and practical significance for improving the performance of a power electronic system.

The invention provides a method for reducing output voltage overshoot of a full-bridge DCDC converter, relates to the field of converters, and solves the technical problem that the input voltage of an isolated full-bridge DC-DC converter is unstable. The method comprises the following steps: acquiring an input voltage signal, an output voltage signal and a load current signal of the converter to form an original signal; based on the preprocessed input voltage signal, the working state of the converter is judged by combining a dynamic threshold value and a critical condition for triggering open loop of a control loop, and when it is judged that the input voltage drops, a reduced output voltage reference value is generated. When the input voltage is normal, the output voltage reference value is kept at a rated value. The reduced output voltage reference value or the voltage reference value is kept at a rated value and the preprocessed output voltage signal are subtracted, and an error signal is obtained. And taking the preprocessed load current signal as a feedforward quantity to generate a PWM driving signal. The method and the device are used for scenes with high voltage stability requirements.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention discloses a starting circuit for a band-gap reference circuit, the band-gap reference circuit is a current mode band-gap base conversion circuit and comprises an error amplifier, a first branch, a second branch, a first MOS tube and a first resistor, the first end of the first MOS tube is connected with power supply voltage, the second end of the first MOS tube is connected with a first output node, and the second end of the first MOS tube is connected with a second output node; the first end of the first resistor is connected with a first output node, the second end of the first resistor is connected with a reference potential, the first output node is used for outputting band-gap reference voltage VBG, and the starting circuit is connected between power supply voltage and the reference potential and connected with the band-gap reference circuit. The pull-up module is used for pulling up the voltage VINN on the first input end of the error amplifier or pulling down the voltage VINP on the second input end of the error amplifier so as to reduce the voltage VEA on the output end of the error amplifier. The band-gap reference circuit can be separated from a degeneracy point, and the problem of overshoot of the band-gap reference voltage VBG in the starting process cannot be caused.

Disclosed in the present invention are a drive circuit of a power transistor, a load switch circuit, and a power supply module. The drive circuit comprises: a critical saturation drive voltage generation module, used for generating a critical saturation drive voltage; a buffer module, used for generating, on the basis of the critical saturation drive voltage, a drive signal applied to a control end of the power transistor, so as to cause the power transistor to work in a critical saturation on state between a saturation on state and a current limiting state; and an over-current protection module, used for controlling the power transistor to be off when over-current occurs in the power transistor. When short circuit occurs at a voltage output end, the power transistor, due to being in the critical saturation on state, first enters the current limiting state to limit the change rate of the current, preventing excessive switching stress from being generated during a subsequent protective disconnection operation, thereby preventing generation of voltage overshoot in the power transistor.

The embodiment of the invention provides an overshoot voltage control method and circuit and a switching converter, the circuit comprises a conduction time detection module, a feedback voltage detection module, an overshoot voltage control module and a driving control module, the conduction time detection module is used for detecting the conduction time of a lower power tube of the switching converter in the transient change process of a load, and the feedback voltage detection module is used for detecting the feedback voltage of the overshoot voltage control module; judging whether the turn-on time is greater than a steady-state value or not; the feedback voltage detection module is used for detecting the feedback voltage of the output voltage of the switching converter in the transient change process of the load and judging whether the feedback voltage is greater than a preset reference voltage or not; the overshoot voltage control module is used for generating an overshoot voltage control signal according to a first judgment result output by the conduction time detection module and a second judgment result output by the feedback voltage detection module; and the driving control module is used for controlling the turn-off of the lower power tube according to the overshoot voltage control signal. The problem that an existing mode of reducing overshoot voltage on output voltage can cause large occupied circuit area is solved.

The invention relates to a BOOT converter soft start circuit for a large-area-array image sensor, and belongs to the technical field of power management. The technical problem of output voltage overshoot caused by overlarge difference between reference voltage and feedback voltage when the BOOST converter is started is mainly solved. According to the technical scheme, a soft start module generates a linearly-increased soft start voltage VSS, and when the VSS is smaller than a reference voltage VREF, the VREF is replaced to be input into an error amplifier, so that a feedback voltage VFB linearly rises along with the VSS, and the surge of an inductive current is restrained. Technical effects include thoroughly eliminating voltage overshoot, maintaining optimal performance parameters of the system, providing programmable startup characteristics, enhancing system reliability, and simplifying integration complexity.

The application discloses a kind of LDO circuits, including operational amplifier, voltage division sampling circuit and power tube that are electrically connected with each other, wherein, it further includes an overshoot adjusting circuit, which is connected with operational amplifier, including capacitor, first MOS tube, second MOS tube and first mirror unit, one end of capacitor is connected with power supply, the other end is connected with the grid of first MOS tube, first mirror unit is commonly connected, the source and drain of first MOS tube are connected with operational amplifier, the source of second MOS tube is connected with power supply, an external voltage is input to the grid of second MOS tube, the drain of second MOS tube is connected with first mirror unit, and first mirror unit mirrors the current on the circuit of second MOS tube to the circuit on capacitor.The LDO circuit of the application smoothly solves the problem of overshoot of output voltage during power-on process, prevents the damage of circuit device due to voltage overshoot during operation, and improves the reliability of the entire circuit.

The application provides a permanent magnet synchronous motor weak magnetic transition area smooth transition method and system based on a reference voltage adaptive reduction, and belongs to the field of permanent magnet synchronous motor control. The method solves the problem of torque fluctuation caused by voltage overshoot in the existing voltage closed-loop weak magnetic control with a fixed reference voltage. The method comprises the following steps: obtaining a theoretical maximum torque according to a preset current limit value by simultaneously solving a torque equation and a current constraint equation; calculating torque ratio parameters and speed ratio parameters in real time; calculating a reference voltage adaptive coefficient based on an adaptive smooth transition algorithm; multiplying the adaptive coefficient by the inscribed circle voltage of an inverter to dynamically adjust the reference value of the voltage closed loop, so that smooth control of the weak magnetic transition area is realized. The method is mainly used in the fields of electric aircrafts, electric vehicles and robots.

An embodiment of the present invention discloses a high-frequency equivalent circuit, a modeling method and a modeling device for the high-frequency equivalent circuit. The circuit includes: an equivalent resistor, an equivalent capacitor and a drain parasitic inductor connected in series, and is connected in parallel with an absorption circuit formed by connecting a parasitic inductor, an absorption resistor and an absorption capacitor in series, and then connected in series with an upper transistor conduction equivalent resistor, a power loop parasitic inductor, a DC link equivalent series resistor, a power supply, a power loop resistor and a shunt resistor. Through the present invention, the problem in the related art that the Cascode-type GaN device causes large oscillations at high switching frequencies, resulting in serious voltage overshoot, additional power loss, electromagnetic interference noise, and even device breakdown, reducing the reliability of the system, is solved, and the technical effects of quantitatively suppressing switching oscillations and matching the parameters for suppressing oscillations, ensuring the safe and reliable operation of the GaN device and fully exerting the high-frequency switching characteristics of the GaN power device are achieved.

An integrated circuit (IC) includes an array of compute units and control circuitry for mitigating supply voltage overshoot. Each compute unit contributes to an aggregate time rate of change of current drawn by the IC when transitioning between processing and non-processing states. The control circuitry is configurable to stagger when each compute unit is eligible to transition from processing data to not processing data relative to other compute units, thereby limiting the negative rate of change of current through inductive loads of the IC and preventing voltage overshoot above a maximum threshold. The control circuitry may be distributed among the compute units and configured using statically reconfigurable parameters that specify the maximum number of compute units permitted to transition concurrently and the minimum number of clock cycles between successive group transitions.

The invention discloses a power output control method and system, a storage medium and a program product, and relates to the field of power control. The method comprises the steps that firstly, a control system obtains the output voltage and the output current of a power supply end at the current moment, the feedback voltage of a load end and the set target voltage of the load end at the next moment, and a reference line impedance value is accurately calculated based on the difference value of the output voltage and the feedback voltage and the output current; then, the control system determines a compensation coefficient according to the voltage deviation absolute value and the current change rate; the virtual resistor compensates the direct current impedance of the line in a targeted manner, the voltage drop during continuous high-power output is reduced, the stable voltage quality of the load end is ensured, the dynamic damping characteristic is provided in the virtual inertia link, and the voltage overshoot or undershoot phenomenon easily occurring due to load sudden change is effectively inhibited; finally, the control system superposes the comprehensive voltage correction amount to the power supply reference voltage, thereby realizing fine adjustment of the power supply output voltage, and improving the reliability and quality of electric energy supply.

The invention relates to a direct-current side rapid discharging technology, and discloses a converter direct-current side rapid discharging method, which comprises the following steps of: during boosting, monitoring a voltage value of a direct-current side capacitor in real time, comparing the voltage value with a preset target voltage, and when the detected capacitor voltage is lower than a set value, adjusting the output of a power supply circuit and increasing a charging current by a control system; on the contrary, when the voltage of the capacitor is close to the set value, the control system can gradually reduce the charging current, so that stable boosting is achieved, and voltage overshoot is avoided. According to the converter direct-current side rapid discharging method, the circuit can be actively disconnected, so that the influence on a power grid is cut off, the problem of direct-current side capacitor discharging existing in an existing APF or SVG hardware power topology is solved, and the converter direct-current side rapid discharging method has very high practical value, so that under the condition that the cost is not increased too much, the direct-current side rapid discharging of the converter is achieved through a local inversion method. And the voltage of the direct current side capacitor can be rapidly reduced, so that the safety of maintenance personnel is protected, and the practicability is very high.

The application discloses a short-circuit recovery voltage limiting method for a three-stage direct-current generator, which detects output voltage U0 of the three-stage direct-current generator and load current i L to determine the state of the load, adjusts the output state of the three-stage direct-current generator according to the state of the load by using an asymmetric half-bridge excitation topology, detects the generation output voltage and the load current to determine characteristic states such as a short-circuit state, a short-circuit recovery state and a first voltage peak falling edge after short-circuit recovery, and closes upper and lower excitation power tubes in combination with the asymmetric half-bridge during short-circuit recovery, so that the two power tubes are opened only when the first voltage peak falls to a voltage undervoltage value after short-circuit recovery, and voltage overshoot during short-circuit recovery of the three-stage direct-current generator is limited to the maximum extent, and the safety of a power supply system is ensured.

The present application relates to the technical field of voltage stabilizing circuit, in particular to a low-cost fast transient response linear voltage stabilizer circuit, comprising an LDO main loop module and a transient response enhancement feedback circuit, the transient response enhancement feedback circuit is coupled between the error amplifier output end and the power tube gate end, a fast feedback path is constructed through two groups of coupling capacitors, directly acting on the power tube gate, and cooperating with the clamping unit to accelerate the node voltage change. The present application cancels the complex modules such as comparator and band gap reference in the traditional scheme, without relying on large off-chip capacitors, the voltage overshoot and undershoot during load jump can be effectively suppressed, the circuit structure is simple, the static power consumption is low, the layout area is small, the manufacturing cost is low, and the system reliability and integration are high.

The invention relates to a cascaded SiC power device, and relates to the field of semiconductor power devices. According to the technical scheme, through the innovative structure that the first capacitor is arranged between the gate and the drain of the Si MOS tube and the second capacitor is arranged between the gate and the source, the switching speed of the cascaded SiC power device can be accurately regulated and controlled. Specifically, compared with a traditional scheme of increasing switch delay by adjusting grid resistance and introducing extra loss by adding an external RC buffer circuit, the scheme can avoid extra energy loss and realize consideration of performance and energy efficiency while ensuring low switch delay; moreover, the scheme can effectively suppress the undesirable phenomena of voltage overshoot, ringing, electromagnetic interference and the like, remarkably reduces the voltage stress of the power device, improves the working stability of the device, prolongs the service life of the device, and enhances the overall reliability of a power electronic system. In addition, according to the scheme, the implementation mode of switching speed regulation and control is simplified, convenience is provided for designers to carry out device type selection and circuit design, and the design efficiency of a power electronic system is improved.