16 results about "Ball bonding" patented technology

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

The invention provides a high-speed low-power-consumption light emitting chip and a manufacturing method thereof. The high-speed low-power-consumption light emitting chip comprises a packaging substrate; the interconnection packaging substrate is inversely arranged in the first area of the packaging substrate through ball bonding and is electrically connected with the packaging substrate; the silicon-based heterogeneous integrated optical chip is inversely buckled in the second region of the packaging substrate through ball bonding and is mechanically and electrically connected with the packaging substrate, and the first region and the second region are not overlapped; and the electric chip is inversely arranged on the interconnection packaging substrate and the silicon-based heterogeneous integrated optical chip through ball bonding and is electrically connected with the interconnection packaging substrate and the silicon-based heterogeneous integrated optical chip.

The invention discloses a back grid graphene FET biosensing chip and a preparation method thereof, and the preparation method comprises the steps: employing an ICP etching and chemical copper plating technology, and fully plating Cu in an etching hole region to form a Cu-containing connection site to connect a source electrode and a drain electrode; the method comprises the following steps of: opening holes in a Cu-containing part and a grid electrode overlapping region on the back surface of a wafer, plating copper, communicating copper Cu in an opening region with the Cu part in a hole middle region, and then carrying out electron vapor film plating Cu / Ti, so that the back surface is communicated with a grid electrode, a source electrode and a drain electrode, thereby obtaining a graphene FET sensor chip containing a back grid electrode. And the manufactured chip is connected with the tail end part of the corresponding gold wire of the PCB on the Cu layer part containing the back communicated grid electrode, source electrode and drain electrode in a ball bonding manner, and the bottom surface electrode part of the chip is welded on the PCB. According to the back grid graphene FET biosensing chip, higher current driving capability and lower on resistance are realized, the overall performance of a device is improved, and the effects of low cost, high stability and strong performance are realized.

The application provides a lead frame, a ball welding test method for the lead frame with a chip, and a ball welding test device. The lead frame comprises at least one packaging unit, each packaging unit comprises a base island, a plurality of pins arranged side by side and spaced apart on one side of the base island, and a heat sink extending from the back of the base island in a direction away from the pins. The plurality of pins comprise a first pin connected to the base island and at least two second pins arranged spaced apart from the base island. The lead frame further comprises a connecting rib connecting the outer pin sections of the at least two second pins, and a first packaging body for packaging the periphery of the base island and the inner pin sections of the plurality of pins. That is, the first pin and the second pin are insulated from each other, which facilitates subsequent welding and testing on the lead frame with the chip, can monitor the ball welding process, and reduces the influence of the subsequent cutting rib stress on the final product.

There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):(1) a concentration of Te is 5 to 500 at. ppm;(2) a concentration of Bi is 5 to 500 at. ppm; and(3) a concentration of Sb is 5 to 1,500 at. ppm.

The invention discloses a bonding pad structure of a flexible stimulating electrode convenient to prepare. The bonding pad structure comprises a first insulating layer, a metal material layer, a second insulating layer and a central through hole, the first metal material layer is formed on the first insulating layer; the second insulating layer is formed on the metal material layer and the first insulating layer and exposes part of the metal material layer; the first insulating layer and the second insulating layer are made of the same material; the central through hole comprises a first through hole and a second through hole, the first through hole penetrates through and exposes the first insulating layer and the metal material layer, the second through hole penetrates through the second insulating layer and exposes part of the upper surface of the metal material layer, and the central through hole enables the bonding pad structure to be connected with the feed-through structure through a gold wire ball bonding technology or a conductive adhesive coating technology. According to the bonding pad structure, the preparation process is simple and convenient, and the connection between the electrode and the external circuit can be realized by using a simple gold wire ball bonding or conductive adhesive coating process.

This utility model discloses a circuit board and its pad structure. The pad structure is an elongated structure, and at least one of the long and short sides of the elongated structure has a notch structure. The notch structure is located at the midpoint or approximately the midpoint of its side. The notch structure is used for ball bonding and forming a moving channel for the solder ball. The solder ball moves to the back of the pad structure through the moving channel, and then forms a reliable solder connection with the motherboard on the back of the pad structure. The length of the long side is L, the width of the short side is W, and L / W ≥ 1.25.

A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

The invention discloses a bonding method for enhancing gold wire bonding quality reliability, and belongs to the technical field of semiconductor thick film hybrid integrated circuit packaging. The bonding method comprises the following steps: (1) firstly, pre-planting gold balls on the thick film gold conduction band, and increasing the contact area and the bonding strength of a bonding point and the gold conduction band; and (2) carrying out safety ball bonding on the crescent, and tightly clamping the crescent between the two golden balls to form hamburger wrapping ball bonding. The problems that in an existing bonding technology, crescent bonding pseudo soldering exists, and the root of a bonding wire is prone to breakage are solved. The method is widely applied to the packaging technology of gold conduction band electronic components, in particular to the packaging technology of a semiconductor hybrid integrated circuit adopting a gold wire bonding structure.

The application discloses a preparation method of a flip-chip and vertical-chip interconnectable stacking structure, which comprises the following steps: S1, preparing a substrate; S2, preparing a flip-chip, and mounting a chip with metal bumps and metal bumps on the substrate; S3, preparing a vertical-chip, and interconnecting the metal bumps on the back of the chip with the metal bumps on the back of the flip-chip; S4, filling and protecting the stacking structure of S1 to S3 with an underfill; S5, ball bonding the front of the vertical-chip, and connecting the substrate with the welding line; and S6, plastic packaging the whole. The method has the advantages that the interconnection path distance between the stacked chips is reduced, the electrical performance and packaging reliability are improved, the number of substrate layers is reduced, and the packaging size is reduced.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

The invention provides a method for improving the bonding strength of gold wire ball bonding, and the method comprises the step of adding a pretreatment step for removing a gold ball and an oxide layer on the surface of a to-be-bonded region and redundant materials before formal welding. A pretreatment step is added before formal welding. According to the method, the oxide layer and the redundancy on the bonding surface are effectively removed, so that the gold wire and the metal surface can be better combined during formal bonding, the bonding strength is improved, and the packaging reliability of an electronic device is improved. The problem that the gold wire ball bonding strength is insufficient due to the fact that the bonding surface is contaminated or an oxide layer is thick is solved.

The application discloses a selective photothermal ball planting welding process based on plasma surface phosphorus doping, and comprises the following steps: heat insulation treatment is performed on a non-welding area of a welding surface of a substrate to be processed, and a soldering ball is laid on a welding point; copper wires on the back surface of the substrate are connected with a voltage-adjustable device, a vacuum treatment is performed on the environment of the substrate, and the substrate is placed into a photothermal furnace. Compared with the traditional process in which phosphorus is added into solder alloy in the form of an intermediate alloy, phosphorus is doped on the surface of the soldering ball in the form of phosphorus ions, the amount of surface phosphorus doping is adjusted by controlling voltage, the oxidation resistance and wettability of the surface of the soldering ball are improved, the conductive effect of the soldering ball is not affected, the selective photothermal welding of the soldering ball is performed, the warping of the substrate caused by high temperature in the ball planting process is avoided, multiple soldering balls can be simultaneously subjected to photothermal welding, and the efficiency of the welding process is improved by performing surface phosphorus doping in the process of the photothermal ball planting welding.

The objective of this invention is to ensure the reliability of primary bonding (also known as first bonding, FAB bonding, ball bonding) and secondary bonding (also known as second bonding, wedge bonding), improve the anti-deposition properties of the cutting edge, and maintain and improve the productivity of the bonding process. The aim is to provide an Ag bonding line that achieves the above objectives. The bonding line that achieves these objectives is an Ag bonding line composed of an Ag alloy comprising: In: 0.05% to 3.0% by mass; Pd, Pt, and Au: 0.010% to 5.0% by mass; Sc, Ti, and Mn: 0.0005% to 0.050% by mass; and P, Zn, Bi, and Cu: 0% to 0.030% by mass.

A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

The utility model relates to a lead bonding device of an ultrasonic gold wire ball bonder, which comprises a wire feeding mechanism and a welding mechanism, the wire feeding mechanism is arranged above the welding mechanism, the welding mechanism comprises a gold wire clamping device and a welding head assembly, the gold wire clamping device is arranged above the welding head assembly, and the welding head assembly is arranged above the gold wire clamping device. The gold wire clamping device comprises a wire leading device, a wire clamp and a wire clamp driver, the wire clamp is installed on the wire clamp driver, the wire clamp driver drives the wire clamp to conduct opening and closing movement, the wire leading device is arranged above the wire clamp, a wire penetrating hole is formed in the wire leading device, and the wire penetrating hole is perpendicular to the wire clamp. According to the lead bonding device of the ultrasonic gold wire ball bonding machine, shaking of the gold wire in the conveying and welding process is reduced, the accuracy of the welding position of the gold wire is improved, therefore, the problem of poor welding is avoided, and the welding precision and quality are improved.