34 results about "Ball bonding" patented technology

A capillary for performing ball bonding includes a body defining a lumen, a first blade defined in a lower tip of the body, and a second blade defined in the lower tip of the body for increasing reliability of a ball bonding procedure performed using the capillary.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

The invention provides a high-speed low-power-consumption light emitting chip and a manufacturing method thereof. The high-speed low-power-consumption light emitting chip comprises a packaging substrate; the interconnection packaging substrate is inversely arranged in the first area of the packaging substrate through ball bonding and is electrically connected with the packaging substrate; the silicon-based heterogeneous integrated optical chip is inversely buckled in the second region of the packaging substrate through ball bonding and is mechanically and electrically connected with the packaging substrate, and the first region and the second region are not overlapped; and the electric chip is inversely arranged on the interconnection packaging substrate and the silicon-based heterogeneous integrated optical chip through ball bonding and is electrically connected with the interconnection packaging substrate and the silicon-based heterogeneous integrated optical chip.

The invention discloses a back grid graphene FET biosensing chip and a preparation method thereof, and the preparation method comprises the steps: employing an ICP etching and chemical copper plating technology, and fully plating Cu in an etching hole region to form a Cu-containing connection site to connect a source electrode and a drain electrode; the method comprises the following steps of: opening holes in a Cu-containing part and a grid electrode overlapping region on the back surface of a wafer, plating copper, communicating copper Cu in an opening region with the Cu part in a hole middle region, and then carrying out electron vapor film plating Cu / Ti, so that the back surface is communicated with a grid electrode, a source electrode and a drain electrode, thereby obtaining a graphene FET sensor chip containing a back grid electrode. And the manufactured chip is connected with the tail end part of the corresponding gold wire of the PCB on the Cu layer part containing the back communicated grid electrode, source electrode and drain electrode in a ball bonding manner, and the bottom surface electrode part of the chip is welded on the PCB. According to the back grid graphene FET biosensing chip, higher current driving capability and lower on resistance are realized, the overall performance of a device is improved, and the effects of low cost, high stability and strong performance are realized.

The application provides a lead frame, a ball welding test method for the lead frame with a chip, and a ball welding test device. The lead frame comprises at least one packaging unit, each packaging unit comprises a base island, a plurality of pins arranged side by side and spaced apart on one side of the base island, and a heat sink extending from the back of the base island in a direction away from the pins. The plurality of pins comprise a first pin connected to the base island and at least two second pins arranged spaced apart from the base island. The lead frame further comprises a connecting rib connecting the outer pin sections of the at least two second pins, and a first packaging body for packaging the periphery of the base island and the inner pin sections of the plurality of pins. That is, the first pin and the second pin are insulated from each other, which facilitates subsequent welding and testing on the lead frame with the chip, can monitor the ball welding process, and reduces the influence of the subsequent cutting rib stress on the final product.

A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):(1) a concentration of Te is 5 to 500 at. ppm;(2) a concentration of Bi is 5 to 500 at. ppm; and(3) a concentration of Sb is 5 to 1,500 at. ppm.

An enhanced bond pad configuration for a light emitting diode (LED) chip of a surface mountable package is presented herein. The surface mountable package comprises an LED chip that has been bonded, within a cavity of the surface mountable package, to a lead frame. The LED chip comprises a first metal layer that has been formed on a first gold bond pad that has been formed on a substrate of the LED chip, or a second gold bond pad that has been formed on the substrate and that surrounds a second metal layer that has been formed on the substate. The surface mountable package further comprises a gold wire that has been ball bonded, via a gold ball, onto the first metal layer or the second metal layer to electrically couple the LED chip to the lead frame.

The invention relates to a unique tip structure suitable for a ball bonding chopper, the unique tip structure comprises a conventional structure and a cavity structure, the conventional structure comprises a wire hole, a first inner tangent plane, a second inner tangent plane, an inner cavity chamfer height, an appearance chamfer, an appearance surface angle and an appearance size, and the cavity structure comprises an upper platform, a platform taper and a platform height. The method has the advantages that an extra cavity structure is added in the tip, the height of a Ball Height above a single-layer gold ball bump Ball Thickness is increased, the overall height of the single-layer gold ball bump is effectively increased, the number of times of a stacking process is reduced, and the production efficiency is improved; the width of the single-layer Top Diameter is increased, the process difficulty of the stacking process is reduced, and the production yield is improved.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

The invention discloses a bonding pad structure of a flexible stimulating electrode convenient to prepare. The bonding pad structure comprises a first insulating layer, a metal material layer, a second insulating layer and a central through hole, the first metal material layer is formed on the first insulating layer; the second insulating layer is formed on the metal material layer and the first insulating layer and exposes part of the metal material layer; the first insulating layer and the second insulating layer are made of the same material; the central through hole comprises a first through hole and a second through hole, the first through hole penetrates through and exposes the first insulating layer and the metal material layer, the second through hole penetrates through the second insulating layer and exposes part of the upper surface of the metal material layer, and the central through hole enables the bonding pad structure to be connected with the feed-through structure through a gold wire ball bonding technology or a conductive adhesive coating technology. According to the bonding pad structure, the preparation process is simple and convenient, and the connection between the electrode and the external circuit can be realized by using a simple gold wire ball bonding or conductive adhesive coating process.

The high-reliability ball bonding gold wire is prepared from the following raw materials in parts by weight: 2 to 10 ppm of Be, 0 to 30 ppm of Ca, 5 to 20 ppm of Pd, 5 to 20 ppm of Pt, 5 to 20 ppm of Al, 0 to 20 ppm of Mg, 5 to 30 ppm of Ce, 0 to 20 ppm of La, 0 to 30 ppm of Y, 0 to 30 ppm of Gd, 2 to 30 ppm of Bi, less than or equal to 100 ppm of added total content and the balance of Au with the purity of 99.999 wt%. The raw materials are sequentially subjected to vacuum melting, hot extrusion, rolling, intermediate annealing, intermediate-fine-fine drawing and annealing to prepare the alloy. The gold wire prepared by optimizing the content of the alloy elements is good in grain size, uniform in salient point grain and stable in length of a heat affected zone, the coplane consistency of gold salient points during ball bonding can be improved, and the gold wire has high strength and high reliability.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

A semiconductor package (100) includes: a substrate (102); a plurality of leads (104); a semiconductor die (106) attached to the substrate (102) at a first side of the semiconductor die (106), the semiconductor die (106) having a bond pad (108) on a second side of the semiconductor die (106) opposite the first side; and a ball bond connection structure (112) connecting the bond pad (108) to a first lead (104_1) of the plurality of leads (104). The ball bonding structure (112) includes at least two levels (200, 202) of ball bonded wire loops (118) stacked on top of each other and secured to each other at opposite ends of the stacked ball bonded wire loops (118) such that the at least two levels (200, 202) of stacked ball bonded wire loops (118) are electrically parallel. Methods for manufacturing the semiconductor package (100) are also described.

This utility model discloses a circuit board and its pad structure. The pad structure is an elongated structure, and at least one of the long and short sides of the elongated structure has a notch structure. The notch structure is located at the midpoint or approximately the midpoint of its side. The notch structure is used for ball bonding and forming a moving channel for the solder ball. The solder ball moves to the back of the pad structure through the moving channel, and then forms a reliable solder connection with the motherboard on the back of the pad structure. The length of the long side is L, the width of the short side is W, and L / W ≥ 1.25.

A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

The invention discloses a bonding method for enhancing gold wire bonding quality reliability, and belongs to the technical field of semiconductor thick film hybrid integrated circuit packaging. The bonding method comprises the following steps: (1) firstly, pre-planting gold balls on the thick film gold conduction band, and increasing the contact area and the bonding strength of a bonding point and the gold conduction band; and (2) carrying out safety ball bonding on the crescent, and tightly clamping the crescent between the two golden balls to form hamburger wrapping ball bonding. The problems that in an existing bonding technology, crescent bonding pseudo soldering exists, and the root of a bonding wire is prone to breakage are solved. The method is widely applied to the packaging technology of gold conduction band electronic components, in particular to the packaging technology of a semiconductor hybrid integrated circuit adopting a gold wire bonding structure.

The present invention provides a chip embedding structure for a hybrid integrated circuit and a preparation method thereof. The structure comprises a packaging substrate (1), a embedding groove (11) and a BGA solder ball (2) provided on the packaging substrate (1), a multi-layer chip interconnection component (3) connected in the embedding groove (11), an AlN substrate (5) connected on the multi-layer chip interconnection component (3), a thermally conductive insulating adhesive (6) filled in the embedding groove (11), and the AlN substrate (5) electrically connected to the conductor of the packaging substrate by gold wire ball bonding. The preparation method provided by the present invention adopts a multi-layer chip interconnection component embedded structure, significantly improving the integration efficiency, functional density and heat dissipation capacity of the chip embedding circuit, fully utilizing the internal structural space, and improving the high-density integration level and packaging reliability.

The application discloses a preparation method of a flip-chip and vertical-chip interconnectable stacking structure, which comprises the following steps: S1, preparing a substrate; S2, preparing a flip-chip, and mounting a chip with metal bumps and metal bumps on the substrate; S3, preparing a vertical-chip, and interconnecting the metal bumps on the back of the chip with the metal bumps on the back of the flip-chip; S4, filling and protecting the stacking structure of S1 to S3 with an underfill; S5, ball bonding the front of the vertical-chip, and connecting the substrate with the welding line; and S6, plastic packaging the whole. The method has the advantages that the interconnection path distance between the stacked chips is reduced, the electrical performance and packaging reliability are improved, the number of substrate layers is reduced, and the packaging size is reduced.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

This application discloses a ball bonding wire bonding device and its control method. The ball bonding wire bonding device includes: a vertical base and a bonding head base, the bonding head base being connected to the vertical base and movable vertically relative to the vertical base; an ultrasonic transducer and a wire clamp assembly, the ultrasonic transducer and the wire clamp assembly being indirectly mounted on the bonding head base; a wedge, the wedge being connected to the ultrasonic transducer, the welding wire being clamped by the wire clamp assembly and passing through the wedge; a ignition needle, the ignition needle being connected to the vertical base, the ignition needle being used to cooperate with the wedge to complete the welding wire ball bonding, i.e., completing one welding operation; a wire cutter assembly, the wire cutter assembly being connected to the bonding head base and located on both sides of the welding wire along with the ignition needle. After one welding operation is completed, the bonding head base moves vertically upward, and after an appropriate amount of welding wire is released from the wedge, the wire cutter assembly immediately cuts the welding wire.

A semiconductor package includes: a substrate; a plurality of leads; a semiconductor die attached to the substrate at a first side of the semiconductor die, the semiconductor die having a bond pad at a second side of the semiconductor die opposite the first side; and a spherical bond interconnect structure connecting the bond pad to a first lead of the plurality of leads. The present invention relates to a spherical bond interconnect structure comprising at least two levels of spherical bond wire loops stacked on each other and attached to each other at opposite ends of the stacked spherical bond wire loops such that the at least two levels of stacked spherical bond wire loops are electrically connected in parallel. Methods of manufacturing the semiconductor package are also described.

The invention provides a method for improving the bonding strength of gold wire ball bonding, and the method comprises the step of adding a pretreatment step for removing a gold ball and an oxide layer on the surface of a to-be-bonded region and redundant materials before formal welding. A pretreatment step is added before formal welding. According to the method, the oxide layer and the redundancy on the bonding surface are effectively removed, so that the gold wire and the metal surface can be better combined during formal bonding, the bonding strength is improved, and the packaging reliability of an electronic device is improved. The problem that the gold wire ball bonding strength is insufficient due to the fact that the bonding surface is contaminated or an oxide layer is thick is solved.

The invention relates to a gold wire ball wedge bonding method, which comprises the following steps of: planting a first gold ball on an RF (Radio Frequency) bonding pad of a PCB (Printed Circuit Board) by adopting a ball bonding process, carrying out wedge bonding on one end of a gold wire on an RF bonding pad of a silicon optical chip by adopting a wedge bonding process, and pulling the other end of the gold wire up and then carrying out wedge bonding on the first gold ball; or, the second gold balls are planted on the RF bonding pad of the silicon optical chip and the first gold balls are planted on the RF bonding pad of the PCB by adopting a ball bonding process, then one end of the gold wire is subjected to wedge bonding on one second gold ball by adopting a wedge bonding process, and the other end of the gold wire is pulled up and then is subjected to wedge bonding on one first gold ball. The 1.6 T silicon optical module comprises the structure formed by bonding through the gold wire ball wedge bonding method. The method has the beneficial effects that the problem that the total length of the gold wire is too long is solved by adopting a gold wire ball wedge bonding method, the problem that the reliability of wedge bonding on a bonding pad in a PCB is unstable is solved, after ball wedge bonding is adopted, the maximum diameter of the gold wire can be 35 microns, the force is strong, the reliability is good, and the high-frequency performance is good.

The invention relates to an automobile power generation regulator fixed through mixed glue, and belongs to the technical field of power generation regulators, a circuit board assembly is pasted on a heat dissipation plate through the mixed glue, the circuit board assembly comprises an electronic component and a circuit board, and the electronic component is pasted on the circuit board through the mixed glue; a bare chip or a bonding pad on a circuit board is mutually connected with a plastic support insert terminal through routing ultrasonic bonding of a plurality of metal wires, electronic components are arranged on the circuit board through a conductive silver adhesive and spacing ball bonding process, effective electrical connection is achieved, and the requirement for environmental protection is met compared with lead solder paste; compared with lead-free solder paste, tin whiskers, tin cracks and other defects are reduced. Filler or spacing balls can be added into the conductive silver adhesive / heat dissipation adhesive to be uniformly mixed, so that the consistency of the mounting thickness of electronic components can be ensured, the uniformity of the quality of a regulator product is ensured, and the reliability of the product is improved.

The application discloses a selective photothermal ball planting welding process based on plasma surface phosphorus doping, and comprises the following steps: heat insulation treatment is performed on a non-welding area of a welding surface of a substrate to be processed, and a soldering ball is laid on a welding point; copper wires on the back surface of the substrate are connected with a voltage-adjustable device, a vacuum treatment is performed on the environment of the substrate, and the substrate is placed into a photothermal furnace. Compared with the traditional process in which phosphorus is added into solder alloy in the form of an intermediate alloy, phosphorus is doped on the surface of the soldering ball in the form of phosphorus ions, the amount of surface phosphorus doping is adjusted by controlling voltage, the oxidation resistance and wettability of the surface of the soldering ball are improved, the conductive effect of the soldering ball is not affected, the selective photothermal welding of the soldering ball is performed, the warping of the substrate caused by high temperature in the ball planting process is avoided, multiple soldering balls can be simultaneously subjected to photothermal welding, and the efficiency of the welding process is improved by performing surface phosphorus doping in the process of the photothermal ball planting welding.

The objective of this invention is to ensure the reliability of primary bonding (also known as first bonding, FAB bonding, ball bonding) and secondary bonding (also known as second bonding, wedge bonding), improve the anti-deposition properties of the cutting edge, and maintain and improve the productivity of the bonding process. The aim is to provide an Ag bonding line that achieves the above objectives. The bonding line that achieves these objectives is an Ag bonding line composed of an Ag alloy comprising: In: 0.05% to 3.0% by mass; Pd, Pt, and Au: 0.010% to 5.0% by mass; Sc, Ti, and Mn: 0.0005% to 0.050% by mass; and P, Zn, Bi, and Cu: 0% to 0.030% by mass.

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

The invention discloses a high-heat-dissipation packaging method and a high-heat-dissipation packaging structure. The high-heat-dissipation packaging method comprises the following steps: step 1, mounting a chip on a carrier plate; 2, covering a metal layer on the surface of the chip; step 3, wrapping all the chips with a dielectric layer; 4, thinning the dielectric layer until the chip is exposed; 5, bonding the heat dissipation layer on the surface of the chip, and then removing the carrier plate to expose the metal pad surface of the chip; 6, preparing a metal circuit layer I on the metal pad surface of the chip; 7, preparing an insulating dielectric layer on the first metal circuit layer; 8, preparing a metal circuit layer II on the insulating dielectric layer; ninthly, preparing an insulating layer on the second metal circuit layer; and 10, performing ball mounting, and cutting into single packaging bodies. The heat dissipation layer is arranged, so that heat is dissipated in time, and the reliability of a product is improved; the metal layer is arranged to realize heat conduction and signal shielding, so that the signal quality of the product is improved; the packaging efficiency is high, tens of thousands of packaging bodies can be packaged at a time, and therefore the packaging cost is remarkably reduced.

A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.