585 results about "Electronic packaging" patented technology

The invention relates to a bionic Al / SiC composite material with a three-dimensional network multilevel structure and a preparation method of the bionic Al / SiC composite material, and belongs to the technical field of new material preparation. According to the method, through the collaborative process of freeze casting and organic foam impregnation, the problem that in the prior art, the multilevel aperture and the complex network structure are difficult to cooperatively regulate and control is solved. The preparation method comprises the following specific steps: preparing tert-butyl alcohol-based ceramic slurry, impregnating the slurry with polyurethane foam, performing freeze casting molding, removing a solvent through freeze drying, performing high-temperature sintering to form SiC ceramic with a three-dimensional reticular hierarchical pore structure, and finally preparing the Al / SiC composite material through a vacuum pressure infiltration process. Wherein a sintering aid is added into the slurry, so that the sintering temperature is obviously reduced; the specification (40-60 ppi) of polyurethane foam, the solid phase content (20-30 vol.%) of slurry, the freezing speed (0-90 DEG C) and the content (5-20 wt.%) of a sintering aid are regulated and controlled. And the cross-scale collaborative design of micron-scale directional holes and millimeter-scale mesh holes is realized. The Al / SiC composite material prepared by the invention has the advantages that the compressive strength, fracture toughness and other properties are obviously higher than those of the traditional single-aperture porous ceramic, and the Al / SiC composite material is suitable for the fields of manufacturing and energy absorption of precise instruments, electronic packaging and optical devices.

The invention discloses a preparation process of a high-performance Cu-Ni-Fe alloy calculated and designed based on a first principle, and relates to the technical field of alloy material preparation. According to the process, a precise Cu-Ni-Fe ternary alloy thermodynamic database is constructed by combining a first principle with a CALPHAD method, a multivariate phase diagram is calculated based on the database to determine a component range, then optimized components of a work function, an elastic constant and a thermal expansion coefficient are calculated through the first principle, and a finished product is obtained through smelting, heat treatment and forming machining. The final alloy is composed of, by atomic percent, 30%-75% of Cu, 10%-30% of Ni and 10%-30% of Fe, the tensile strength is larger than or equal to 816.4 MPa, the total elongation at break is larger than or equal to 34.27%, the thermal expansion coefficient is smaller than 20 * 10 <-6 > / K, the excellent mechanical property and thermal stability are achieved, the problems that component design is blind and performance fluctuation is large in a traditional process are solved, and the alloy is suitable for the fields of ocean engineering, electronic packaging and the like.

The invention discloses a protruding conductive microsphere and a pretreatment method thereof. The pretreatment method specifically comprises the steps of roughening treatment, protruding and interface activity treatment, sensitization treatment, activating treatment and chemical plating. In the protruding and interfacial activity treatment, by adding an interfacial agent, the electronegativity of the surfaces of the microspheres is enhanced, electrostatic adsorption with positively charged nickel nanoparticles is generated, and meanwhile, agglomeration of the nickel nanoparticles on the surfaces of the polymer microspheres is effectively prevented through the steric hindrance effect; therefore, a nickel nanoparticle bulge structure which is high in density, uniform in distribution and firm in combination is formed on the surface of the polymer microsphere. The method effectively solves the problems that a traditional conductive microsphere coating is prone to cracking and falling off, poor in dispersity and the like, the prepared protruding conductive microspheres have the outstanding advantages of being high in coating binding force, excellent in conductivity, good in dispersity, not prone to agglomeration and the like, the technological process is simple, mass production is easily expanded, and the method is suitable for large-scale production. The anisotropic conductive adhesive film has a wide commercial application prospect in the field of electronic packaging such as anisotropic conductive adhesive films.

The invention relates to the technical field of electronic packaging materials, in particular to a phthalonitrile modified thermosetting resin composition containing a siloxane structure and application of the phthalonitrile modified thermosetting resin composition in the electronic packaging materials. The composition comprises multifunctional epoxy resin, XYLOK phenolic resin, a curing accelerator, a modifier and an inorganic filler, and the modifying agent is eugenol phthalonitrile trisiloxane. The modifier disclosed by the invention has good mechanical compatibility and dispersity in matrix resin; when the epoxy resin is applied to a thermosetting resin system, the processability can be improved, and the toughness of a cured product can be effectively improved while the glass-transition temperature is increased, so that the cured product has excellent bending property; the composition has excellent thermal stability, low bending modulus, good impact performance and humidity and heat resistance after being cured, the glass transition temperature of the composition is effectively improved, the comprehensive performance of resin is remarkably improved, and the composition is suitable for improving the packaging reliability and environmental stability of semiconductor devices.

The invention discloses a single-component high-heat-resistance type epoxy adhesive and a preparation method of the single-component high-heat-resistance type epoxy adhesive. The adhesive is prepared from the following components in parts by weight: 30 to 40 parts of N, N-4, 4 '-diphenylmethane bismaleimide; 50 parts of bisphenol F epoxy resin; 36.47 parts of 4, 4 '-diaminodiphenyl sulfone; 20 to 40 phr of phenyl glycidyl ether; 1 to 2 phr of two terminal type epoxy silicone oil; 4 to 6 phr of hydroxyl-terminated polyether sulfone; 10 to 20 phr of boron nitride, the surface of which is modified by gamma-glycidyl ether oxypropyl trimethoxy silane; and 1 to 3 phr of an adhesion promoter. According to the adhesive disclosed by the invention, the heat resistance, the mechanical property, the dimensional stability, the process adaptability and the like are synergistically improved, the use requirements of an aviation structural part on long-term service at 150-180 DEG C and an electronic packaging device on the condition of short-time reflow soldering at about 200 DEG C can be met, and the reliability of the adhesive in a high-temperature environment is remarkably improved.

The invention relates to the technical field of electronic packaging materials, in particular to a thermosetting resin composition for packaging a high-reliability semiconductor device. The composition comprises multifunctional epoxy resin, XYLOK phenolic resin, a curing accelerator, a modifier and an inorganic filler, and the modifying agent is eugenol phthalonitrile polysiloxane. The modifier has good mechanical compatibility and dispersity in matrix resin; and when being applied to a thermosetting resin system, the epoxy resin can improve the processability and effectively enhance the toughness of a cured product. The composition provided by the invention accords with the processing and forming process of the existing epoxy molding compound; according to the present invention, the spiral flow length of the molding compound is substantially increased, the processing performance is good, the cured product has advantages of good thermal stability, low bending modulus, good impact property and good heat and humidity resistance, and the glass transition temperature is increased. The resin is significantly improved in comprehensive performance, and is suitable for packaging semiconductor devices with high requirements on reliability and environmental stability.

The invention discloses a preparation method of high-purity aluminum nitride single crystal powder. The method comprises the following steps: uniformly mixing raw materials aluminum powder and aluminum nitride powder according to a ratio, putting the mixture into an air pressure sintering furnace, vacuumizing, introducing high-pressure argon, heating to a set temperature, introducing nitrogen, carrying out a fire blast reaction, cooling to room temperature, and crushing to obtain the high-purity aluminum nitride single crystal powder with D50 of 20-200 microns. According to the method, the synthesis of the coarse-particle high-purity aluminum nitride single crystal powder is realized by utilizing the rapid nitridation explosion reaction of the aluminum powder in the high-temperature and high-pressure nitrogen, the method has the characteristics of simple process and low preparation cost, and the prepared high-purity aluminum nitride single crystal powder can be used as a high-thermal-conductivity filler for electronic packaging.

The invention belongs to the field of organic-inorganic hybrid materials, and discloses a high-temperature-resistant polyhedral oligomeric silsesquioxane material and a preparation method thereof. According to the high-temperature-resistant polyhedral oligomeric silsesquioxane material, polyimide serves as a main chain, aminopropyl hepta-isobutyl polyhedral oligomeric silsesquioxane serves as a side chain, and a hybrid system with a clear structure is formed through chemical bonding. The obtained high-temperature-resistant polyhedral oligomeric silsesquioxane material has both the toughness of polyimide and the high-temperature stability of a cage structure, is high in thermal decomposition temperature, and is suitable for the fields of high-temperature-resistant coatings, electronic packaging, aerospace and the like. According to the method, the raw materials are low in price, wide in source channel and low in toxicity, and the obtained product is high in purity and excellent in performance and has good actual use value.

The invention discloses yellowing-resistant light-cured organic silicon resin and a preparation method thereof, and belongs to the technical field of light-cured resin. The resin is prepared from the following raw materials in parts by weight: 80 to 100 parts of vinyl-terminated polysiloxane, 15 to 25 parts of trimethylolpropane tri (3-mercaptopropionate), 1 to 3 parts of yellowing-resistant aid, 2 to 4 parts of photoinitiator and 0.5 to 1 part of flatting agent. When the resin is prepared, the raw materials are uniformly mixed under a dark condition, and the resin is obtained after vacuum defoaming. Wherein the yellowing-resistant auxiliary agent is a benzotriazole ultraviolet light absorber and is synthesized through a multi-step reaction, the structure simultaneously contains a benzotriazole ring and anthryl, and the benzotriazole ring and the anthryl have a synergistic effect so that ultraviolet rays can be efficiently absorbed and yellowing can be inhibited. The obtained resin has excellent yellowing resistance and high curing speed, and is suitable for the fields of coatings, printing ink, adhesives, electronic packaging and the like.

The invention discloses a wear-resistant hybrid core-shell electric contact material and a preparation method, and relates to the technical field of electric contact materials, the electric contact material is prepared by taking copper as a matrix, adding SiC (at) Cu composite powder, CNT (at) Cu composite powder, Ti3SiC2 powder and a rare earth oxide dopant, and preparing the composite powder, mixing the powder, forming, sintering and the like. The composite powder with the core-shell structure is prepared through chemical plating, magnetron sputtering, chemical vapor deposition and other technologies, the interface wettability of a reinforcing phase and a copper matrix is effectively improved, through the multi-element hybrid reinforcing design, the hardness, abrasion resistance and heat conduction performance of the material are synergistically improved, the thermal expansion coefficient and the friction factor are reduced, and the service life of the material is prolonged. The prepared electric contact material has excellent comprehensive performance, can be widely applied to the fields of electric locomotive pantograph slide plates, electronic packaging and the like, and is stable and controllable in preparation process and suitable for industrial production.

The invention belongs to the technical field of electromagnetic shielding and thermal management materials, and particularly relates to an electric insulation aramid nanofiber electromagnetic shielding composite film and a preparation method thereof. The composite film comprises an ANF layer, an LM-coated AgNWs conductive layer and a PDMS electrical insulation layer which are stacked in sequence, and the multifunctional composite film with high conductivity, high thermal conductivity, excellent electromagnetic shielding performance and electrical insulation is constructed through vacuum-assisted suction filtration, hot pressing and blade coating processes. The electromagnetic shielding effectiveness of the composite film in the X wave band reaches up to 92 dB, the volume resistivity exceeds 1 * 10 < 15 > omega.cm, and the composite film has good mechanical strength, flexibility and environmental stability and is suitable for electromagnetic protection and thermal management in electronic packaging, flexible electronics and extreme environments.

A silicon photonic bridge and method of manufacturing an integrated circuit semiconductor package may be provided. The system may include an interposer layer formed from a combination of organic and inorganic materials. The silicon photonic bridge may be embedded within the interposer layer. The silicon photonic bridge may include an electrical integrated circuit (IC) configured to process electrical signals and drive the photonic IC (PIC), and a PIC configured to process optical signals, an optical connector element(s) configured to interface the PIC with fiber and a silicon bridge configured to interface between an ASIC integrated on top of the interposer with the EIC. A silicon photonic bridge may be electrically and optically enabled to convert the electrical signal from the ASIC above the interposer to an optical signal going into fiber, and vice versa. Through-silicon vias (TSVs) may extend through the optical engine.

The invention relates to a preparation method of sulfur-containing siloxane modified epoxy resin, and belongs to the technical field of high polymer materials. The epoxy resin is prepared from the following components in parts by weight: 100 parts of epoxy resin, 8-11 parts of a reactive diluent, 7.5-9.3 parts of a siloxane modifier, 22-30 parts of ultramicro boron nitride filler, 85-93 parts of a curing agent and 1.2-1.6 parts of an accelerant through blending modification, the siloxane modifier and the epoxy resin are crosslinked and anchored, a sulfur-containing structure and a siloxane structure with chelating property are introduced into a cross-linked network, and the sulfur-containing structure and the siloxane structure act on the boron nitride filler and are strongly chelated with the metal base material, so that the pain point of insufficient heat dissipation of the epoxy resin packaging material is solved, the service life of the epoxy resin packaging material is prolonged, and the service life of the epoxy resin packaging material is prolonged. Overall optimization of cohesiveness, mechanical property and toughness is achieved through structural design, and a high-performance material solution is provided for high-power electronic packaging.

The invention discloses a three-dimensional stacked multi-channel radio frequency module based on a mixed ceramic material, and relates to the technical field of microelectronic packaging. The invention relates to a radio frequency module which comprises an HTCC tube shell and a DPC tube shell which are arranged in an overlapped mode, the interior of the HTCC tube shell is divided into at least two independent cavities used for installing radio frequency chips through a metal enclosure frame, a control and power supply chip is installed in the DPC tube shell, and a solder ball array is further arranged on the lower surface of the DPC tube shell; the three-dimensional stacked packaging structure further comprises a radio frequency vertical interconnection piece, the radio frequency vertical interconnection piece is vertically arranged in the DPC tube shell and extends upwards, and the HTCC tube shell and the DPC tube shell are fixedly connected through the radio frequency vertical interconnection piece to form the three-dimensional stacked packaging structure. The invention provides a three-dimensional stacked multi-channel radio frequency module based on a mixed ceramic material, which can significantly reduce the overall packaging cost and complexity through heterogeneous material integration and three-dimensional stacking on the premise of ensuring high-efficiency heat dissipation and high channel isolation of a high-power radio frequency chip. And the multi-channel radio frequency SiP packaging with high performance, miniaturization and low cost is realized.

The application belongs to the technical field of polymer composites, and discloses a low linear expansion coefficient polyphenylene sulfide composite material, a preparation method and application thereof. The composite material comprises 20-60 parts of polyphenylene sulfide resin, 40-80 parts of a low expansion filler system, 0.5-5 parts of a coupling agent, 0.1-1 part of a lubricant and 0.1-1 part of a toning agent. The low expansion filler system is at least two of a lamellar structure filler, a fibrous structure filler and a nano-sized filler. The polyphenylene sulfide composite material obtained has a low linear expansion coefficient while maintaining good mechanical properties through the limiting effect of the lamellar structure filler on the thermal expansion of the resin matrix, the reinforcing effect of the fibrous structure filler on the strength and modulus of the material and the improvement effect of the nano-sized filler on the filling structure and the interface state. The polyphenylene sulfide composite material can be applied to the fields of precision instruments, electronic packaging, electronics and electrical appliances, automobiles and aerospace, etc. which have high requirements for thermal dimensional stability.

The application discloses a packaging structure with a selective copper-coated and chip-integrated unit and a preparation method thereof, and relates to the technical field of electronic packaging. The preparation method comprises the following steps: patterning a ceramic substrate, and attaching a first green body layer and a second green body layer to the surface of a first metallized layer of the patterning ceramic substrate and the surface of a heat dissipation plate, respectively; the first green body layer and the second green body layer are composed of solid-state diffusible metal particles, the conductive circuit area is stacked with a copper sheet through the first green body layer, the chip attaching area is stacked with a chip through the first green body layer, and bagging, sealing and sintering are performed. The four process steps of patterning a ceramic substrate, attaching a chip, copper-coating a conductive circuit and integrating a substrate and a heat dissipation plate are integrated into a one-time pressure sintering process, integrated packaging is realized, the packaging process is simplified, the production efficiency is improved, the thermal stress control is excellent, and the device performance and reliability are improved.

The utility model relates to the technical field of microelectronic packaging application, in particular to a tool for welding a light window and a porcelain body, which comprises a welding base, a pressing plate upper cover and a pressing block core, a groove is arranged at the center of the welding base, round corners are arranged at four corners of the groove, a first through hole is arranged on the welding base, and a second through hole is arranged on the pressing plate upper cover. A groove is formed in the welding base, a first through hole is formed in the welding base, the first through hole is located on the two sides of the groove, a counter bore is formed in the bottom of the welding base and communicated with the first through hole, a second through hole is formed in the center of the pressing plate upper cover, and a third through hole is formed in the pressing plate upper cover. The light window is ensured to be uniformly and flatly attached to the welding surface of the porcelain body, the reliability of product packaging is ensured, and meanwhile, a more excellent welding environment is provided for a subsequent transparency process.

The application discloses Sn-Cu lead-free solder based on laser interface self-organization construction and a preparation method thereof, and relates to the technical field of electronic packaging lead-free solder. The Sn-Cu lead-free solder is composed of 0.6-0.8% of Cu, 0.01-0.2% of Mo, 0.01-0.1% of nano Y2O3 particles, and the balance of Sn and inevitable impurities in percentage by mass. The preparation method comprises the following steps: Sn and Cu are jointly smelted, Sn-Mo intermediate alloy is added, then nano Y2O3 particle suspension is introduced into the melt in the form of atomization spraying, and then ultrasonic is performed to obtain a uniform melt; the uniform melt is subjected to laser remelting treatment and local asymmetric cooling to obtain the Sn-Cu lead-free solder. Through the synergistic effect of laser remelting, dynamic oxygen partial pressure regulation and cold field induction, a multi-scale gradient cooperative protection structure is constructed on the surface, interface and inside of the solder, oxygen diffusion and corrosion medium invasion can be effectively inhibited, the oxidation resistance, corrosion resistance and interface stability are improved, and the application is suitable for the fields of high-reliability electronic packaging and high-temperature service devices.

The application relates to a method for improving the thermal fatigue resistance of a lead-free solder interconnection BGA package joint, and relates to the field of electronic packaging welding. The surface of a PCB substrate is processed by superfast laser to have a well-shaped micro-nano structure, the well-shaped micro-nano structure is a grid-shaped straight-line groove microstructure formed by a plurality of transverse parallel lines and a plurality of longitudinal parallel lines, the adjacent interval between the plurality of transverse parallel lines and the plurality of longitudinal parallel lines is 80-120 mu m, the groove width is 10-20 mu m, the groove depth is about 30-50 um, the groove parameters are adjusted by adjusting the superfast laser processing parameters, and a large number of micro-particles are covered on the inside and around the groove; the solder ball is planted on a bare chip through a heating plate, and the chip and the processed PCB substrate are welded and packaged through a hot air welding machine. The specific surface area and structural richness of the surface are improved, and the problems of poor thermal fatigue resistance and poor durability of the existing BGA package joint can be solved.

The invention belongs to the technical field of electronic packaging and printed circuit boards, and particularly relates to a method for improving the bending resistance of a flexible circuit board, which comprises the following steps: after plasma pretreatment is carried out on the surface of a polyimide substrate, a three-dimensional nano-column array structure is constructed by depositing gold nanoparticles as a mask and combining reactive ion etching; then removing the mask to obtain a clean polyimide nano structure; and depositing a titanium / copper seed crystal layer through magnetron sputtering, and realizing conformal filling and coating of the copper conductive layer on the nano structure by adopting pulse reverse electroplating to form an adhesive-free mechanical interlocking interface. An adhesive-free three-dimensional mechanical interlocking structure is used for replacing an adhesive layer which is weak in physical performance and prone to fatigue failure, and the structural weak link that a traditional flexible circuit board is layered and cracked first under dynamic bending stress is thoroughly removed.

The invention provides an electro-thermal-magnetic-force coupling field finite element simulation life prediction method for a board-level electronic packaging device, relates to the field of electronic packaging reliability analysis and finite element simulation, and aims to solve the problems that life prediction depends on single / partial field coupling, neglects the influence of electromagnetic force and magnetic field, lacks a multi-field transmission mechanism, and cannot predict the life of the board-level electronic packaging device. Therefore, the problems of large prediction deviation and incapability of realizing full-field coupling are solved. According to the method, a real welding spot model is firstly built and repaired, a board-level packaging three-dimensional structure subdivision grid is constructed, electromagnetic force and additional heat are obtained through electro-magnetic coupling, heat-force coupling loading is input to calculate heat stress, at least two fatigue models are substituted, and the service life of a key welding spot is calculated. Electro-thermal-magnetic-force full-coupling simulation is achieved, life prediction precision is improved through multi-model fusion, multi-package and multi-load adaptation is achieved, a reliable basis is provided for electronic package design, the test period is shortened, the experiment cost is reduced, and development of package reliability research towards multi-field life prediction is promoted.

The invention belongs to the field of electronic packaging materials, and particularly relates to a high-thermal-conductivity ceramic material for LED packaging and a manufacturing process of the high-thermal-conductivity ceramic material for LED packaging. The high-thermal-conductivity ceramic material is prepared from silicon nitride, aluminum nitride, magnesium fluoride, yttrium fluoride, lithium carbonate and two newly-designed modified compounds. The phase change regulator is composed of a boron-doped rare earth silicate nanocrystalline phase change regulator and a bimetallic chalcogenide compound interface modifier according to a specific weight part ratio. The preparation process mainly comprises the following steps: ball-milling and mixing the components, drying, granulating, and carrying out segmented hot pressed sintering in a protective atmosphere to finally obtain the compact ceramic material. The high-power LED packaging structure is particularly suitable for packaging of high-power LEDs, and the technical problem that heat dissipation and mechanical performance are difficult to consider at the same time is effectively solved.

The invention discloses a welding spot testing method and system and a computer program product, and relates to the technical field of electronic packaging, and the method comprises the steps: constructing a single welding spot testing architecture through a to-be-tested single welding spot of a chip unit, and determining a transmission parameter matrix according to a scattering parameter matrix of the single welding spot testing architecture; combined de-embedding calculation is carried out by combining a substrate open circuit transmission matrix, a substrate short circuit transmission matrix and a chip short circuit transmission matrix which are measured when the single welding spot test framework is in an open circuit structure and a short circuit structure, so that the parasitic effect of the test substrate and the chip unit and the crosstalk of adjacent structures are accurately stripped; therefore, transmission performance parameters which only reflect intrinsic characteristics of the to-be-tested single welding spot can be directly extracted, signal superposition interference and approximate estimation limitation existing in a traditional multi-point series connection test or parameter equalization method are broken through, systematic errors are eliminated, accurate measurement and fault location of electrical characteristics of the to-be-tested single welding spot are achieved, and the method is suitable for large-scale popularization and application. And the accuracy and the reliability of the welding spot test in the packaging body are obviously improved.

This invention discloses an integrated device and method for mercury vapor recovery and waste gas purification in amalgam brazing, belonging to the field of electronic packaging brazing and hazardous gas treatment. The device comprises a brazing sealing enclosure, a condensation unit, an iodine solution absorption unit, a sulfur absorption unit, a zinc powder absorption unit, and a safety monitoring module, connected in series. During brazing, mercury-containing waste gas is collected by the enclosure and first enters the condensation unit for pre-cooling and recovery of liquid mercury; then it enters the iodine solution absorption unit, where it reacts with iodine to generate mercuric iodide precipitate and capture silver dust; next, the residual mercury is fixed as mercuric sulfide by the sulfur absorption unit; finally, trace mercury is adsorbed by the zinc powder absorption unit. The purified waste gas is monitored in real time by a mercury concentration sensor; if the concentration exceeds the standard, an alarm is triggered and the heating platform is automatically shut down. This invention achieves a mercury removal rate of over 99.5% through four-stage synergistic purification, with emission concentrations lower than the national standard of 0.01 mg / m³. 3 It has advantages such as high purification efficiency, safety and reliability, good material compatibility, and convenient maintenance.

This invention relates to a method for preparing integrated high thermal conductivity layered material silicone rubber gaskets for heat dissipation in electronic packaging based on peeling. The method involves mixing polydopamine-modified boron nitride or graphite powder, silicone rubber, a silane coupling agent, and a bis(2,5)-pentachlor vulcanizing agent in a three-roll mill. By reducing the roller spacing and extending the mixing time, the boron nitride or graphite powder is peeled off within the composite material under the shear force of the rollers. The resulting mixture is placed in a metal mold and subjected to vacuum hot-pressing vulcanization, followed by a secondary vulcanization, to obtain a high thermal conductivity silicone rubber gasket for heat dissipation in electronic packaging. This method has broad application prospects in the fields of electronic packaging and thermal management.

The invention provides a device for assisting packaging and column planting of a ceramic column grid array and a manufacturing method of the device, and relates to the field of microelectronic packaging manufacturing and assembling. The problems that according to an existing column planting device, a resin piece is prone to deformation at high temperature, a metal piece and ceramic thermal expansion are not matched, stress warping is prone to being generated, welding column positioning precision and perpendicularity are insufficient, multi-specification chips are poor in universality, and high-temperature stability and micron-level positioning are difficult to consider at the same time are solved. According to the invention, the rigid-flexible coupling structure of the AlSi10Mg aluminum alloy shell and the resin plug board with the temperature resistance of not less than 210 DEG C is adopted, and the double-layer boss and the through hole array are matched, so that the precise positioning of the welding column is realized, chips of multiple specifications are adapted, and high-temperature stability and micron-sized alignment are both considered.

The utility model discloses a packaging device of embedded intelligent integrated sensing magnetic ring, specifically relates to electronic packaging technical field, including transfer subassembly, positioning cleaning subassembly, burdening subassembly and potting subassembly, the positioning cleaning subassembly is installed above transfer subassembly, and the burdening subassembly is placed on the side face of positioning cleaning subassembly, and the potting subassembly is placed on the side face of the burdening subassembly. By means of the positioning and cleaning assembly, when the packaging equipment uses a mechanical arm to splice a substrate and a magnetic ring, accurate splicing and positioning can be provided, the problems of eccentricity and inclination in butt joint of the substrate and the magnetic ring are solved, and therefore the efficiency and performance of the magnetic ring in the subsequent machining process are not affected. And the plasma cleaning gun can carry out dirt removal and oil stain removal treatment on the surface of the magnetic ring, so that the surface of the magnetic ring base connector is smoother, and subsequent potting treatment of the potting assembly on the magnetic ring base connector is facilitated.

This invention discloses a whisker-reinforced aluminum nitride ceramic substrate with high thermal conductivity and high toughness, and its preparation method. The substrate comprises the following components by mass fraction: 1.5wt%~4wt% AlN single crystal whiskers, 4wt%~6wt% composite sintering aid, and the balance being AlN powder; the AlN single crystal whiskers undergo oxide layer removal treatment, and have an aspect ratio of 10~30. The preparation method includes: mixing the raw materials, mechanically stirring and ultrasonically dispersing them, adding a dispersant, binder, and plasticizer, ball milling to form a slurry, casting, drying, degreasing, and sintering at 1800~1880℃ in a nitrogen atmosphere at normal pressure to obtain a dense substrate. This invention, through extremely low whisker addition combined with oxide layer removal treatment, eliminates interfacial thermal resistance, achieving a thermal conductivity ≥250W / (m·K) and fracture toughness ≥4.0MPa·m. 1 / 2 The synergistic improvement in bending strength (≥550MPa) and the process compatibility with existing casting-atmospheric pressure sintering production lines make it suitable for electronic packaging fields such as SiC / GaN power devices and IGBT modules.

The application relates to the fields of microelectronic packaging and novel display technology, and discloses a packaging method suitable for a hybrid device packaging structure of a MicroLED, which comprises the following steps: preparing a wide-bandgap semiconductor driving chip, a logic control chip and a light-emitting pixel chip; transferring and fixing the wide-bandgap semiconductor driving chip, the logic control chip and the light-emitting pixel chip on the surface of a carrier plate in a coplanar mode; depositing a dielectric layer on the surface of the carrier plate to expose electrode contacts; manufacturing metal wires to build an internal electrical interconnection structure and lead out a peripheral interface; coating a packaging material on the surface of the carrier plate to insulate and coat the internal electrical interconnection structure; curing and cutting to separate an independent pixel packaging body; and assembling the pixel packaging body to a display panel substrate and connecting the peripheral interface to a global power supply network. The application suppresses the hot carrier effect under high-temperature working conditions, solves the problem of thermal failure, reduces the parasitic capacitance of high-frequency driving interconnection, removes potential failure products before macroscopic mounting, and improves the assembly yield of a display panel array.

The invention belongs to the technical field of high polymer materials, and particularly relates to a high-toughness epoxy resin composite material for electronic packaging and a preparation method thereof.The epoxy resin composite material is prepared from, by weight, 12-18 parts of modified epoxy resin, 3-7 parts of curing agent, 1-3 parts of MIL-53-AI, 0.05 part of silane coupling agent, 0.1 part of 2-methylimidazole and 78 parts of silica powder; single-terminated amino polyether is grafted on the side chain of epoxy resin to introduce a flexible chain, so that the toughness and flowability of the modified epoxy resin are effectively improved, and meanwhile, the modified epoxy resin and a surface-treated MOF porous framework MIL-53-AI form a macroscopic and microscopic dual stress buffer network; and the toughness and fatigue cracking resistance of the electronic packaging composite material are greatly improved on the basis of ensuring high heat resistance.