977 results about "Solder alloy" patented technology

A solder ball having a diameter of 1.2 mm or less, a dispersion of a diameter distribution of 5% or less and sphericity of 0.95 or more, an area ratio of the maximum dendrite being 80% or less of a cross section including a center of the solder ball, comprises a first additional element of 0.5-8 mass% of Ag and/or 0.1-3 mass % of Cu, and 0.006-10 mass %, in total, of at least one second additional element selected from the group consisting of Bi, Ge, Ni, P, Mn, Au, Pd, Pt, S, In and Sb, the balance being substantially Sn. The solder ball is produced by a uniform droplet-spraying method comprising the steps of vibrating a melt of a solder alloy in a crucible under pressure to force the melt to drop through orifices of the crucible; permitting the melt dropping through the orifices to become spherical droplets in a non-oxidizing gas atmosphere; and rapidly solidifying them.

The invention relates to a tin-base leadless solder without silver, and relative production. Wherein, it comprises Bi at 7.5-60% (without 7.5%), Cu at 0.1-3.0%, and the left is tin; and it also can contain Zn, Ni, P, Ge, Ga, In, Al, La, Ce, Sb, Cr, Fe, Mn, or Co while the total amount of micro alloy element is not higher than 1.0%. And the production comprises that in protective gas or vacuum, smelting middle alloy Sn-Cu10; then smelting into leadless solder alloy ingot which can be used as solder directly or be made into bar band, wire plate or powder. The inventive solder has low cost while its fusion point can be controlled between 140 and 230Deg. C. And it has strong anti-oxidization and anti-corrosion properties.

The invention relates to a lead-free solder alloy for welding the electronic elements and its manufacturing method. The lead-free solder alloy is characterized in that the main components are Sn, Ag, Cu, and Ni, and In, Bi, Pd, P, Ge, Ga, Se, Te, La, Ce, Pr, Nd, Pm, Sm, Eu, Tm are added selectively. The preparation method is characterized by taking Sn, Ag, Cu, Ni and the additional elements in proportion and smelting them at the temperature of 1300 C. to 1500 C. to obtain the intermediate alloy by using water glass covering process; melting the residual Sn and the intermediate alloy at the temperature of 300 C. to 350 C. by using water glass covering process, and casting the molten materials into alloy pig and soldering tin rod at the temperature of between 250 C. and 350 C.. The lead-free solder alloy provided by the invention can be used for welding the Ag and Pd noble metal electronic element.

A metal sealed organic light emitting diode device comprising a lid, containing a recessed portion to accommodate large quantity of getter/dessicant, a band of metal stack at the perimeter over which is laid a band of low temperature melting solder alloy, pre-tinned subsequently, and a substrate. The substrate containing organic light emitting diode at the central area with a band of metal stack at the perimeter. The lid and the substrate are placed together in substantial alignment such that the pre-tinned low melting solder band of the lid contacts the metal stack of the substrate and thermally sealed in a controlled atmosphere. Multiples of substrates are sealed with a single lid containing multiplicity of recessed portions with multi-segmented metal stack and pre-tinned solder band to derive a large area device.

A lead-free solder alloy substantially contains Sn and Ti, and has a temperature of a liquidus line of not greater than 400° C. The lead-free solder alloy contains no toxic lead and has sufficient bonding strength to oxide materials such as glass and ceramics.

A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead free solder selected from the group comprising Sn—Ag—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 to 2.0% by weight Sb or Bi, and 0.5 to 3.0% Ag. Formation of voids at an interface between the solder and the solder capture pad is suppressed, by including Zn. Interlayer dielectric delamination is suppressed, and electromigration characteristics are greatly improved. Methods for forming solder joints using the solders.

An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100° C. and about 180° C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

A semiconductor device is provided which has internal bonds which do not melt at the time of mounting on a substrate. A bonding material is used for internal bonding of the semiconductor device. The bonding material is obtained by filling the pores of a porous metal body having a mesh-like structure and covering the surface thereof with Sn or an Sn-based solder alloy.

Various embodiments of the invention provide laminate composite preform foils for high-temperature Pb-free soldering applications. The laminate composite preform foil is composed of a high-melting, ductile metal or alloy core layer and a low-melting solder coating layer at either side of the core layer. During soldering, the core metal, liquid solder layer, and substrate metals react and consume the low-melting solder phase to form high-melting intermetallic compound phases (IMCs). The resultant solder joint is composed of a ductile core layer sandwiched by the IMCs layers at substrate sides. The joint has a much higher remelt temperature than the original melting temperature of the initial solder alloy coating, allowing subsequent mounting of packaged devices.

The present invention is intended to provide a glass article with a metal member joined thereto in which an electroconductive coating film is formed on at least a part of the surface of the glass article by baking a silver paste that includes Ag particles and a glass frit, a joining plane of the metal member is fixed onto the electroconductive coating film with a lead-free solder alloy containing Sn as a main component, and the lead-free solder alloy contains at least 1.5 mass % of Ag, which prevents the appearance of the electroconductive coating film and the bonding strength from degrading. Furthermore, in the present invention, when using a metal member having at least two joining planes, the total area of the joining planes is set within a range of 37 mm² to 50 mm², which allows high bonding strength between the glass article and metal member to be maintained while using the lead-free solder alloy. Moreover, in the present invention, the volume of the lead-free solder alloy to be provided on each joining plane is set to be 1.0 to 2.0 times the product of the area of the joining plane concerned and the thickness of the lead-free solder alloy, which prevents cracks from occurring in the glass article.

A method for detaching and recovering the electronic elements and solder from the rejected circuit board includes uniformly heating said circuit board until the solder is molten, sucking the electronic elements from the molten solder, and solidifying the solder.

An active solder alloy, an electronic device package including the active solder alloy bonding an electronic device to a substrate, and a method of forming high-strength joints by soldering using the solder alloy. The alloy contains up to about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, or tantalum; between about 0.1 and 5% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); between about 0.01 and 1% by weight of gallium up to about 10% by weight of silver; up to about 2% by weight of magnesium; and a remainder consisting of tin, bismuth, indium, cadmium, or a mixture of two or more of these elements. The alloy enables low-temperature (less than about 180° C.) soldering within relatively narrow melting ranges (less than about 10° C.).

The invention relates to a low-silver lead-free solder alloy and a preparation method and a used device thereof. The low-silver lead-free solder alloy consists of the following components in percentage by weight: more than 0 and less than or equal to 1 percent of Ag, 0.2 to 1 percent of Cu, 0 to 59 percent of Bi, 0 to 0.07 percent of Ni, 0 to 0.7 percent of Sb, 0 to 0.06 percent of Ge, 0 to 1 percent of Ga, 0 to 0.1 percent of RE and the balance of Sn. The solder prepared by the invention does not contain harmful metal Pb and meets the national requirement of electronic packaging environmental-friendly use; in addition, the quick cooling and vibration combined preparation method is adopted, so that the melting range is effectively reduced, the alloy is quickly solidified, structure non-uniformity is improved, component uniformity and structure refinement are ensured while oxidation is reduced, and a product has the characteristics of fine structure, low copper dissolution rate and high wettability and oxidation resistance.

Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.

An alloy suitable for use in a ball grid array or chip scale package comprising from 0.05-1.5 wt. % copper, from 0.1-2 wt. % silver, from 0.005-0.3 wt % nickel, from 0.003-0.3 wt % chromium, from 0-0.1 wt. % phosphorus, from 0-0.1 wt. % germanium, from 0-0.1 wt. % gallium, from 0-0.3 wt. % of one or more rare earth elements, from 0-0.3 wt. % indium, from 0-0.3 wt. % magnesium, from 0-0.3 wt. % calcium, from 0-0.3 wt. % silicon, from 0-0.3 wt. % aluminium, from 0-0.3 wt. % zinc, from 0-2 wt. % bismuth, from 0-1 wt. % antimony, from 0-0.2 wt % manganese, from 0-0.3 wt % cobalt, from 0-0.3 wt % iron, and from 0-0.1 wt % zirconium, and the balance tin, together with unavoidable impurities.

A flux contains resin having film forming ability, activator, solvent, and at least one complex selected from silver complex and copper complex. The flux is used when soldering is performed onto a circuit having electroless nickel plating or further having gold plating on the electroless nickel plating. Allowing a barrier layer of silver or copper to deposit on the surfaces of lands suppresses the diffusion of nickel into the melted solder alloy during soldering, and also prevents phosphorous concentration. This improves the bonding strength of soldering and suppresses the reduction deposition of silver and/or copper to portions other than circuit patterns.

A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu₃Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu₆Sn₅ intermetallic compound layer is formed thereon. A Cu atomic site in the Cu₆Sn₅ intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu₆Sn₅ intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

A lead-free solder alloy composition comprising tin, silver and copper, and a process for reflow soldering for minimizing tombstoning frequency are disclosed. In one particular exemplary embodiment, the lead-free Sn—Ag—Cu solder alloys for minimizing the tombstoning effect of the present disclosure display high mass fraction during melting and prolonged melting as shown by a widened DSC peaks, that allows for a balanced surface tension on both ends of the chip component to develop. In accordance with further aspects of this exemplary embodiment, the alloys display a mass fraction of solid during melting greater than 20% and a DSC peak width greater than 8° C. using a 5° C./min scan rate. In accordance with further aspects of this exemplary embodiment, the alloy comprises on a weight basis Ag 1-4.5%, Cu 0.3-1% balanced with Sn.