20 results about "Electromigration" patented technology

The application provides an electromigration reliability non-uniform discrete equivalent circuit modeling method and system, adopts an equivalent circuit-based method to analyze electromigration stress evolution of a general complex interconnection structure, fully considers a thermal field effect in a model, realizes stress analysis equivalent circuit modeling under multi-physical field coupling, and solves the problem of waste of computing resources in processing large-span interconnection structures by using a traditional uniform discrete method, avoids unnecessary transient simulation on an immortal interconnection tree, reduces the computing load of full-chip-level analysis, and realizes efficient and high-precision transient analysis of electromigration reliability of a large-scale interconnection network under multi-physical field coupling effects.

The present application relates to the technical field of semiconductor, and particularly relates to an electromigration test structure, including 13 structures of I-V lead hole through layer type, single-side lead voltage test pad and current source hole through layer type, cross layer type for double-side lead voltage test pad. The I-V lead hole through layer type is a structure, which comprises four structural elements, namely, a metallization test line, other metal interconnection lines, a hole interconnection structure and a large-area metallization test pad. The structure comprises two metal layers, wherein the metallization test line is located on the first layer, and the current source, the voltage lead and the other metal interconnection lines are connected to the second layer through the hole interconnection, forming a cross layer structure. The present application provides an electromigration test structure for evaluating the electromigration reliability problem caused in the semiconductor device manufacturing process.

The application provides an electromigration test assembly and a manufacturing method and an electromigration reliability test method thereof, and relates to the technical field of semiconductors, and is used for solving the problem of low measurement accuracy. The electromigration test assembly comprises a packaging body, a structure to be tested, two first connecting lines and two second connecting lines. The packaging body is provided with at least four connecting pieces which are spaced apart, and the at least four connecting pieces comprise two first connecting pieces and two second connecting pieces, the two first connecting pieces are used for measuring a test current, and the two second connecting pieces are used for obtaining a test voltage. The structure to be tested is arranged on the surface of the packaging body and is provided with at least two pads which are spaced apart from each other, wherein the two pads are two lead-out ends. The two first connecting lines are connected to the two lead-out ends and the two first connecting pieces respectively, and the two second connecting lines are connected to the two first connecting pieces and the two second connecting pieces respectively. The electromigration test assembly separates the voltage end and the current end, thereby improving the accuracy and stability of measurement.

The application relates to the technical field of ceramic compositions, and discloses an X7R type MLCC anti-aging ceramic dielectric material and a preparation method thereof, which comprises barium titanate, magnesium oxide, lutetium oxide, manganese dioxide and glass frit; wherein magnesium ions and lutetium ions occupy titanium positions on the surface layer of the barium titanate crystal lattice and combine with oxygen vacancies to generate ternary composite defect clusters; the ternary composite defect clusters are locally distributed in the shell layer region of the barium titanate crystal grain and are used for improving the long-range electric migration activation energy of the oxygen vacancies; through the construction of an ion and electron double shielding network, the directional migration of the oxygen vacancies under high-temperature direct current bias is inhibited, the contradiction between the conventional anti-aging means and the dielectric constant maintenance is solved, the high dielectric activity of the polarization area of the barium titanate is ensured, the high-temperature insulation reliability of the ceramic dielectric material is enhanced, and the capacitance aging process is delayed.

This invention provides a non-uniform discrete equivalent circuit modeling method and system for electromigration reliability. It employs an equivalent circuit-based approach to analyze the electromigration stress evolution of general complex interconnect structures, fully considering thermal field effects in the model. This achieves equivalent circuit modeling for stress analysis under multi-physics coupling. Furthermore, by using an adaptive mesh method with non-uniform spatial discretization and a steady-state / quasi-steady-state filtering mechanism, it solves the problem of wasted computational resources in traditional uniform discretization methods when dealing with large-span interconnect structures, and avoids unnecessary transient simulations of immortal interconnect trees, reducing the computational load of full-chip-level analysis. This enables efficient and high-precision transient analysis of the electromigration reliability of large-scale interconnect networks under multi-physics coupling effects.

This invention provides a method and structure for improving the reliability of metal interconnects. The method includes: providing a substrate with metal lines and an extremely low dielectric constant dielectric layer; performing plasma treatment on the exposed surface of the metal lines to remove oxides; depositing a dielectric buffer layer on the treated metal line surface and the extremely low dielectric constant dielectric layer; and depositing a dielectric barrier layer on the dielectric buffer layer. The coefficient of thermal expansion of the dielectric buffer layer is between that of the dielectric barrier layer and the extremely low dielectric constant dielectric layer. The adhesion force of the dielectric buffer layer to the metal lines is greater than that of the dielectric barrier layer. This application alleviates the thermal stress mismatch at heterogeneous interfaces and suppresses interface delamination by constructing a gradient coefficient of thermal expansion structure. Simultaneously, the high adhesion interface significantly suppresses atomic migration, resulting in a 2-fold increase in electromigration lifetime and a 175-fold increase in breakdown lifetime over time.

1. Name of the product in this design: High Current Electromigration Measurement Module. 2. Purpose of this design: To evaluate the reliability of bonding in the chip bonding process and to measure the electromigration phenomenon that occurs when a chip is subjected to a large current. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The present invention provides a solder alloy, a solder paste, a solder ball, a preformed solder, and a soldered joint, which have excellent drop impact resistance and heat cycle resistance, can suppress the occurrence of chip standing and connected tin · tin tips, and can also suppress the occurrence of electromigration. The solder alloy has an alloy composition of Ag: 0.3 to 1.9%, Cu: 0.40 to 1.00%, Bi: 0.5 to 4.9%, P: 0.00100 to 0.02000% by mass, and the balance being Sn. The alloy composition can also contain at least one of Ge, Co, and Ga in an amount of 0.06% or less by mass, respectively. In addition, the alloy composition can also contain at least one of As, In, Zr, Mn, Ti, Zn, Fe, Al, Ni, Au, Mg, Cr, and Pt in an amount of 0.06% or less by mass, respectively.

The application provides a method for electromigration stress analysis of multi-section metal interconnection lines and related equipment, priority of each metal interconnection line is determined by analyzing stress change trend and stress left and right end trend change amount of each metal interconnection line, secondary line sections in a secondary line section set are segmented based on a secondary line section equivalent length threshold value, an auxiliary line section is obtained, the auxiliary line section is added to a priority line section set, and metal interconnection lines other than the auxiliary line section in the secondary line section set are equivalent to one secondary line section, combination of the two significantly reduces calculation complexity; a space-time convolutional neural network is used to simulate an interconnection tree to be processed, a key area prone to cavity formation is taken as a target of high-precision simulation, and a smaller area is processed with lower precision, thereby realizing cooperation of high and low precision, and solving the problem that neural network fitting effect becomes poor due to an increase in simulation line sections in large-scale interconnection tree stress analysis.

This application discloses an optoelectronic device, its fabrication method, and a display device. The optoelectronic device includes a stacked anode, a light-emitting layer, a first electron transport layer, and a cathode. The first electron transport layer includes a first film layer and a second film layer stacked sequentially from the anode to the cathode. The material of the first film layer includes a first metal oxide, and the material of the second film layer includes a metal nitride. The optoelectronic device proposed in this application, by disposing a stable metal nitride on the side of the first electron transport layer near the cathode, can increase interface stability, prevent ion migration, suppress metal electrode electromigration, and contribute to improving the stability of the device.

An optimization method and apparatus for integrated circuit layout in the post-wire-wound stage are provided. The method includes: identifying power rails and corresponding power domains in an integrated circuit design file; performing design specification verification on circuit cells in the integrated circuit design file to calculate multiple usable areas; determining multiple electromigration violations corresponding to the power rails and related current information; defining a path to be corrected on the power rail corresponding to the electromigration violation based on the electromigration violation and the current information; replacing the types of multiple vias on the power rails that do not overlap with the path to be corrected; and correcting the number of vias on the power rails that overlap with the path to be corrected to reduce the number of electromigration violations.

Embodiments of the present application provide a bump packaging structure and a preparation method thereof, and relate to the technical field of semiconductor packaging. The bump packaging structure comprises a chip, a solder pad, a protective layer, a substrate conductive layer, a first combined conductive layer, a conductive column and a solder cap. The substrate conductive layer comprises a multilayer graphene structure. Compared with the prior art, the bump packaging structure and the preparation method thereof provided by the present application can avoid the undercut opening formed by excessive corrosion, and the structure is more stable, the problem of electrode stress cracking is avoided, and the heat dissipation and conductivity are better, effectively alleviating the failure hidden danger caused by electromigration and thermal migration.

This application relates to a method for adjusting electromigration and a power distribution network. The method includes: identifying a target metal wire exhibiting electromigration from among multiple metal wires in the power distribution network, based on preset process data and the load current density of each metal wire; determining the electromigration type corresponding to the contact area between the target metal wire and a connector; determining a region to be treated in the target metal wire based on the electromigration type corresponding to the contact area, the preset process data, and the load current density of the target metal wire; and widening the region to be treated in the target metal wire according to preset size parameters to generate sufficient Bresch effect in the target metal wire to counteract the electromigration phenomenon. This improves the Bresch effect generated in the target metal wire, resulting in better anti-electromigration performance.

This invention belongs to the field of rare earth permanent magnet material preparation technology, and discloses a method for achieving deep grain boundary modification of thick rare earth permanent magnets using the pulsed current electromigration effect. In the preparation process, the magnet is placed in a grain boundary liquefaction state and a high-density DC pulsed current is applied. Using "electron driving force" as an additional vector driving force, heavy rare earth ions are forcibly propelled to migrate directionally into the interior of the magnet along the liquid grain boundaries. This driving force is constant and does not decrease with depth, thereby achieving "full transparency" modification of the thick magnet.

This invention provides a temperature derating method in thermally sensed electromigration (EM) analysis, which may include identifying a heat-sensitive structure, a first heat-generating structure, and a first heat-dissipating structure. The temperature derating method includes adjusting the evaluation temperature of the heat-sensitive structure by adjusting the operating temperature of the first heat-generating structure, and calculating the temperature increase of the heat-sensitive structure.

Provided are a solder alloy, a solder paste, a solder ball, a solder preform, and a solder joint which have excellent drop impact resistance and heat cycle resistance, can suppress the occurrence of chip standing, bridges and icicles, and can also suppress the occurrence of electromigration. The solder alloy has an alloy composition of, by mass %, Ag: 0.3 to 1.9%, Cu: 0.40 to 1.00%, Bi: 0.5 to 4.9%, P: 0.00100 to 0.02000%, with the balance being Sn. The alloy composition may further contain, by mass %, each of Ge, Co and Ga in an amount of 0.06% or less, and at least one. In addition, the alloy composition may further contain, by mass %, each of As, In, Zr, Mn, Ti, Zn, Fe, Al, Ni, Au, Mg, Cr and Pt in an amount of 0.06% or less, and containing at least one of them.

This invention relates to the field of back-contact batteries, specifically to a back-contact battery, its fabrication method, and its applications. The back-contact battery includes: a silicon substrate; a composite passivation layer disposed on the back side of the silicon substrate; a composite seed layer located above the composite passivation layer, comprising: a titanium layer, a nickel layer, and a copper layer; an interdigitated copper electrode disposed on the composite seed layer; and an anti-oxidation protective layer disposed on the surface of the interdigitated copper electrode, comprising: a nickel protective layer and a tin protective layer. This back-contact battery, through the composite seed layer design where the titanium layer directly contacts the composite passivation layer, and the anti-oxidation protective layer structure where the nickel protective layer directly contacts the interdigitated copper electrode, achieves excellent bonding strength between the seed layer and the passivation layer, suppressing copper ion diffusion and electromigration. The synergistic effect of the nickel and tin protective layers not only improves the oxidation resistance of the electrode but also significantly improves the welding compatibility with copper solder strips, thereby ensuring the long-term stability and reliability of the battery.

An electromigration test structure, a test structure, and a test method thereof are disclosed. The electromigration test structure includes: a stacked metal layer under test (UTP) and a signal metal layer. Along the extension direction of the UTP, the signal metal layer is located at both ends of the corresponding UTP and is electrically connected to both ends of the corresponding UTP. Multiple via structures are located between the UTP and the signal metal layer. In this embodiment, because there are multiple via structures between the UTP and the signal metal layer, compared to a scheme where the UTP and the signal metal layer are electrically connected through a single via structure, the probability of thermal damage caused by current passing through the via structure is reduced. Therefore, when applying current to the signal metal layer for wafer-level reliability testing, a large current can be applied to the signal metal layer, correspondingly shortening the test time, thereby improving test efficiency and the reliability of the electromigration test structure.

The application discloses a kind of multi-die interconnection integrity test optimization method and system, it is related to die test technical field, including the weighted connection structure model of CTE mismatch, aspect ratio and hollow density correction is constructed, four kinds of failure of sensitivity model are established to thermal fatigue, TSV leakage, bonding hollow and electromigration, risk index is calculated and three-level coverage baseline is divided by fusing FMEA and safety level, compressed test vector is generated according to clock domain clustering, dynamic rerouting is realized through IEEE1838 hierarchical TAP, online response freezes and extracts adjacent line to form fault cluster, execute hardware level isolation and directional diagnosis, update weight based on fault result, monitor process drift and dynamically adjust threshold, offline update topology graph forms closed loop iteration.The application realizes cross-die differentiation test strategy, improves test efficiency and fault detection rate.

This application provides a method for fabricating a semiconductor device, the semiconductor device itself, and a chip, relating to the field of semiconductor technology. The method includes: providing a substrate and forming a first interconnect layer on the substrate, the first interconnect layer having a first interconnect structure; forming a first barrier layer disposed on the first interconnect layer and at least covering the first interconnect structure; forming a second barrier layer disposed on the first interconnect layer and encapsulating the first barrier layer, the first and second barrier layers constituting a first barrier structure layer; the electromigration resistance of the first barrier layer is greater than that of the second barrier layer. This method can effectively prevent electromigration failure, alleviate interface stress concentration, and improve interface adhesion.