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1068results about How to "Good reversibility" patented technology

Reversible electric fuse and antifuse structures for semiconductor devices

A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via opening for exposing a portion of a plurality of interconnect features; conformally depositing a first material layer over the via opening; depositing a second material layer over the first material layer, wherein the depositing overhangs a portion of the second material layer on a top portion of the via opening; and depositing a blanket layer of insulating material, where the depositing forms a plurality of fuse elements each having an airgap between the insulating material and the second material layer. The method further includes forming a plurality of electroplates in the insulator material connecting the fuse elements. In another embodiment, the method includes depositing a first and a second material layer on a semiconductor substrate, wherein the second material layer having a higher electrical conductivity than the first material layer; selectively etching the first and second material layer to create at least one constricted region to facilitate electromigration of the second material; wherein the electromigration creates a plurality of micro voids; and forming a plurality of electrical contacts on the second material layer.
Owner:GLOBALFOUNDRIES U S INC

Reversible electric fuse and antifuse structures for semiconductor devices

A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via opening for exposing a portion of a plurality of interconnect features; conformally depositing a first material layer over the via opening; depositing a second material layer over the first material layer, wherein the depositing overhangs a portion of the second material layer on a top portion of the via opening; and depositing a blanket layer of insulating material, where the depositing forms a plurality of fuse elements each having an airgap between the insulating material and the second material layer. The method further includes forming a plurality of electroplates in the insulator material connecting the fuse elements. In another embodiment, the method includes depositing a first and a second material layer on a semiconductor substrate, wherein the second material layer having a higher electrical conductivity than the first material layer; selectively etching the first and second material layer to create at least one constricted region to facilitate electromigration of the second material; wherein the electromigration creates a plurality of micro voids; and forming a plurality of electrical contacts on the second material layer.
Owner:GLOBALFOUNDRIES US INC

Orderly arranged In2O3 nanofibers and application of same in preparation of ultra-fast response alcohol sensor

The invention belongs to the technical field of preparation of one-dimensional metal oxide nano-materials and semiconductor gas sensors therefrom, in particular relates to orderly arranged In2O3 nanofibers and application of same in preparation of an ultra-fast response alcohol semiconductor sensor. The process for preparing the orderly arranged In2O3 nanofibers comprises the following steps of: preparing a precursor solution from soluble nitrate, high polymer materials and a solvent; preparing orderly arranged composite nanofibers with a magnetic-field-induced electrostatic spinning technology; and performing high-temperature sintering to remove an organic high polymer template and further obtain the orderly arranged In(NO3)3 nanofibers. The alcohol gas sensor prepared from the orderly arranged In(NO3)3 nanofibers and a planar alumina substrate structure has the advantages that: the response time of the alcohol gas sensor to alcohol gas at the working temperature of 275 DEG C is 0.4 s, and the recovery time is 3 s; and the reversibility and repeatability of the sensor are good and far superior to the traditional alcohol sensor made of nano-powder materials of the same type. In the invention, the advantages of simple process, low cost and high yield are achieved.
Owner:JILIN UNIV
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