6 results about "Acoustic Phonons" patented technology

The application discloses a method for regulating Brillouin gain, a laser and an optical microwave source, and specifically relates to the method for regulating Brillouin gain. a The application discloses a method for regulating Brillouin gain, a laser and an optical microwave source, and specifically relates to the method for regulating Brillouin gain. The method for regulating Brillouin gain adopts the gradual change of the angle between the circular light path and the crystal axis, so that the speed of the generated acoustic phonon is continuously changed, and then the widened backward Brillouin gain feature is generated, the threshold of the backward Brillouin laser is reduced, the linewidth of the Brillouin laser is reduced in one step, and the diversity of the Brillouin laser application is increased.

The application discloses a method for improving intrinsic thermal conductivity of a semiconductor, and belongs to the technical field of the semiconductor, and discloses a semiconductor heterostructure which comprises a semiconductor material and a modified layer which are arranged in a laminated mode; an interface between the semiconductor material and the modified layer is a coherent hetero-interface; the semiconductor material and the modified layer are matched in acoustic phonons and are not matched in optical phonons; and the semiconductor material and the modified layer each independently comprises a III-V semiconductor material. The semiconductor heterostructure with the coherent hetero-interface is constructed, the phonon transport near the interface is in a non-equilibrium state, the phonon-phonon scattering process is regulated and controlled, the thermal resistance caused by high-order phonon scattering is reduced, the phonon relaxation time is prolonged, and the intrinsic thermal conductivity of the material is improved. The application only needs to utilize the interface engineering, does not need to introduce a new material, the preparation process of the semiconductor heterostructure is compatible with an existing chip preparation process, and the engineering has strong realizability.

A quantum acoustic apparatus (114) for contactless excitation of transverse piezo-acoustic phonons is provided. In another aspect, a device and method couples between free-space electromagnetic waves in the radio frequency and microwave frequency range to transverse bulk phonon modes in a piezoelectric material over a wide range of temperatures, from room temperature to cryogenic temperatures, in a contactless fashion. The quantum acoustic apparatus (114) determines if a mechanical mode of the substrate (100) is excited based on a change in amplitude and a shift in the applied signal. The apparatus includes a substrate (100) with electrodes (102) fabricated on top disposed within a resonant cavity (104).

The invention discloses a method and device for enhancing coherent acoustic phonon signals in a MoS2 / GaAs system through MoS2, and the method comprises the steps that MoS2 serves as a transducer to amplify coherent acoustic phonons in a GaAs material, the amplification amplitude of the coherent acoustic phonon signals in the MoS2 / GaAs system is controlled by adjusting the thickness of MoS2, and the thickness of MoS2 ranges from 40 nm to 130 nm. According to the method, the optimal thickness is predicted and selected in advance through a transmission matrix method to achieve the maximum amplification factor, data extraction is facilitated, and nondestructive extraction of precision information such as defects of semiconductor materials such as chips is facilitated.

The present invention discloses a method and apparatus for enhancing coherent acoustic phonon signals in a MoS2 / GaAs system using MoS2. The method includes using MoS2 as a transducer to amplify coherent acoustic phonons in GaAs material, and controlling the amplification amplitude of the coherent acoustic phonon signals in the MoS2 / GaAs system by adjusting the MoS2 thickness, where the thickness is between 40nm and 130nm. The method uses a transfer matrix method to predict and select the optimal thickness in advance to maximize amplification, facilitating data extraction and enabling the lossless extraction of precise information such as defects in semiconductor materials such as chips.

The invention discloses an acoustic phonon-carrier coupling dominant intrinsic carrier mobility measurement method, and relates to the technical field of ultrafast optics. The method comprises the following steps: establishing an optical system to realize space coincidence and time coincidence of probe light and pump light, and obtaining a transient reflection spectrum; acquiring a Brillouin oscillation signal based on the transient reflection spectrum to obtain a Brillouin oscillation frequency; calculating to obtain the elastic modulus of the semiconductor material; obtaining the sum of the electron deformation potential and the hole deformation potential by adopting a time domain Brillouin scattering method; obtaining the difference between the electron deformation potential and the hole deformation potential based on the relationship between the semiconductor material optical band gap and the lattice volume, and calculating to obtain the electron deformation potential and the hole deformation potential; and obtaining intrinsic electron mobility and intrinsic hole mobility dominated by the acoustic phonon-carrier coupling effect according to a deformation potential theory. Accurate regulation and control of the defect state density are avoided, and the deformation potential of electrons and holes can be simply and conveniently measured, so that the intrinsic carrier mobility is measured and obtained.