This disclosure provides a
semiconductor gain chip based on asymmetric
multiple quantum wells, comprising: a lower
electrode layer (201), a substrate layer (202), a buffer layer (203), a lower
waveguide layer (207), a buried active region (208), an upper
waveguide layer (209), a capping layer (205), and an upper
electrode layer (206) stacked sequentially; the lower
waveguide layer (207), the buried active region (208), and the upper waveguide layer (209) together constitute a
longitudinal optical waveguide; the buried active region (207) 208) is an asymmetric multi-
quantum-well structure containing at least two
quantum wells that are different in thickness and / or material composition, so that the
gain spectral peaks of each
quantum well are staggered; the
longitudinal optical waveguide includes a tapered straight waveguide segment (301) and a curved waveguide segment (302) connected in sequence; the tapered straight waveguide segment (301) has a width that gradually changes along its length direction, and the
optical axis extension direction of the curved waveguide segment (302) has a non-zero angle with respect to the
optical axis direction of the tapered straight waveguide segment (301).