176 results about "Acceptor" patented technology

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

A method for producing a substrate comprising a buried oxide layer (1, 10, 20) or a buried nitride layer for the production of electronic components, comprising at least one step for depositing an oxide layer (1, 10, 20) or a nitride layer on a donor substrate (2, 11, 21) and / or an acceptor substrate, and a step for establishing contact between the donor substrate and the acceptor substrate (9, 14, 22), further comprising at least: a first heat treatment of the oxide layer (1, 10, 20) or the nitride layer deposited on the donor substrate (2, 11, 21) and / or the acceptor substrate (9, 14, 22) before connecting the donor substrate (2, 11, 21) with the Acceptor substrate (9, 14, 22) and a second heat treatment of the substrate, which consists of the acceptor substrate (9, 14, 22), the oxide layer (1, 10, 20) or the nitride layer and the entire donor substrate (2, 11, 21) or a part thereof, at a temperature,which is the same as or higher than the temperature applied in the first heat treatment, wherein the second heat treatment is a compression heat treatment, wherein the first heat treatment consists of applying a temperature of 600 to 1000 °C for a period of a few minutes to a few hours in a non-oxidizing inert gas or a mixture of inert gases.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

This invention provides an organic ferroelectric eutectic material, its preparation method, and its applications, relating to the field of ferroelectric materials technology. The organic ferroelectric eutectic material constructs a crystal system with "rigid constraint and flexible adaptation coexisting, dipole order and controllable polarization synchronously" through "molecular selection-supramolecular assembly-crystal structure regulation," achieving a synergistic effect of high Curie temperature, strong polarization characteristics, and excellent flexibility. The preparation method of the organic ferroelectric eutectic material utilizes a simplified "solvent dissolution-solvent evaporation" process, leveraging the mediating effect of the solvent to promote the supramolecular self-assembly of donor and acceptor molecules. This achieves the preparation of an organic ferroelectric eutectic material possessing both high Curie temperature, strong polarization characteristics, and excellent flexibility. The preparation method has multiple advantages, including "stable process, low cost, and suitability for large-area processing," making it a simple, efficient, and universally applicable preparation method suitable for large-scale industrial production.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

The embodiment of the invention provides a SiC LDMOS device, a manufacturing method and a chip. The SiC LDMOS device comprises a P-type substrate; the N-type buried layer is located in the P-type substrate; the N-type epitaxial layer is located on the surface of the P-type substrate and the surface of the N-type buried layer; the P-type injection layer is located in the N-type epitaxial layer, and the bottom of the P-type injection layer is connected with part of the surface of the N-type buried layer; the P-type body region is located in the N-type epitaxial layer and extends into the P-type substrate; and the N-type buffer layer is located in the P-type injection layer and extends into the N-type buried layer. When the device is in a reverse withstand voltage state, the drift region is depleted, ionization donors in the P-type injection layer and the P-type substrate emit power lines and point to ionization acceptors of the N-type buried layer and the N-type epitaxial layer, the N-type epitaxial layer and the N-type buried layer are mutually overlapped, electric field distribution in the drift region of the device can be effectively adjusted, an electric field peak is introduced to the surface of the drift region of the device, and the device is prevented from being damaged. And the overall electric field of the drift region is lifted, so that the voltage resistance of the device is improved.

The present application relates to ferroelectric nematic liquid crystal (FNLC) compounds characterized by chemical structures having electron donor–acceptor chromophores connected via linkers. The compounds have a general structure of A1–L1–A2–L2–(Ax–Ly)n–B, where A and B are aryl or heteroaryl groups, and L are linkers selected to promote spontaneous polar alignment in the nematic phase. The FNLCs enable enhanced second-order nonlinear optical properties and electro-optic coefficients (r33), with values exceeding, e.g., 30 pm / V in some embodiments. The FNLC compounds also exhibit absorption maxima above 400 nm, indicating extended π-conjugation and strong intramolecular charge transfer. The present application also includes compositions and mixtures of such compounds, which may form glassy ferroelectric nematic phases suitable for integration into nonlinear optical devices.

The invention relates to a laser-assisted heterogeneous bonding stripping method, a heterogeneous bonding structure and an optical element, and the method comprises the following steps: preparing an acceptor substrate and a donor substrate which is provided with a first surface and a second surface which are opposite to each other; bonding the to-be-bonded surface of the receptor substrate with the second surface; focusing laser on a preset stripping surface in the donor substrate from the first surface, and performing laser scanning so as to sequentially form a plurality of modified points on the preset stripping surface; after the laser scanning is completed, stripping the donor substrate along the preset stripping surface to obtain a heterogeneous bonding structure comprising an acceptor substrate and a donor film bonded on the acceptor substrate, and the residual donor substrate; the heterogeneous bonding structure is prepared by the laser-assisted heterogeneous bonding stripping method. The optical element comprises the heterogeneous bonding structure. The method provided by the invention has the effect of realizing high-efficiency, high-quality and low-cost manufacturing of a normal-temperature, high-efficiency and lossless heterogeneous bonding structure.

The invention relates to an asymmetric small organic molecule photovoltaic acceptor material based on an iodo-thiophene central core as well as a preparation method and application of the asymmetric small organic molecule photovoltaic acceptor material based on the iodo-thiophene central core, and creatively designs the asymmetric small organic molecule photovoltaic acceptor material based on the iodo-thiophene central core. On the basis of keeping the efficient photoelectric property, the asymmetric iodo-thiophene central core is introduced, so that the fine regulation and control on the molecular stacking behavior and the thin film morphology are realized. The asymmetric small organic molecule photovoltaic acceptor material has good solubility in various organic solvents, molecular accumulation can be finely regulated and controlled through asymmetric central core design, intermolecular pi-pi interaction and accumulation of end groups are enhanced, more orderly-arranged and optimized charge transfer channels are formed, and the asymmetric small organic molecule photovoltaic acceptor material has a good application prospect. Therefore, the crystallinity and morphology of the film are improved.

The invention belongs to the technical field of eutectic semiconductor materials, and discloses a D-A type acene-perylene bisimide eutectic crystal, an organic field effect transistor and a preparation method and application of the D-A type acene-perylene bisimide eutectic crystal and the organic field effect transistor. As a bipolar semiconductor material, the D-A acene-perylene bisimide eutectic crystal shows balanced bipolar with excellent performance, has an ultrahigh on-off ratio, and shows great application value in the aspect of electronic circuits.

The invention discloses an organic small molecular luminescent material based on a thiothiazolyl benzophenone derivative as well as preparation and application of the organic small molecular luminescent material. Thio-thiazolyl benzophenone is used as an acceptor core unit, and the molecular weight, charge transfer degree, light-emitting wavelength and other material characteristics of the material can be effectively adjusted by changing the conjugate length of the acceptor core unit and the type and size of a connecting unit. The bipolar photoelectric material connected with the donor and the acceptor can form a large torsion angle between the donor and the acceptor, so that the non-planarity of the structure is improved, the accumulation degree of the material is reduced, aggregation quenching of the material is effectively inhibited, and the problem that carriers of the unipolar organic photoelectric material are unbalanced is solved; meanwhile, the conjugate length of molecules can be effectively controlled, and the horizontal molecular orientation is improved, so that the device structure is simplified, and the device performance is improved.

An organic electroluminescence device containing a cathode, an anode, and an organic layer disposed between the cathode and the anode, wherein the organic layer contains an emitting layer, a first layer, and a second layer, the first layer is disposed between the anode and the emitting layer, the second layer is disposed between the anode and the first layer, the first layer contains a first hole-transporting material and a second hole-transporting material, and the second layer contains an acceptor material having an affinity value in the range of 3.8 to 6.0 eV and at least one hole-transporting material.

The present disclosure is directed, in general, to (1) nonlinear optical (NLO) chromophores, including (2) compositions / materials / resistive layers comprising NLO chromophores, and the methods of making the compositions / materials / resistive layers comprising NLO chromophores (e.g., methods of poling and / or drying, and the like), (3) uses of NLO chromophores in electro-optic devices (e.g., electro-optic modulators (EOMs)). NLO chromophores disclosed herein not only have large EO effect, but also have fast modulation speed. In addition, NLO chromophores disclosed herein have superior refractive index, photostability and thermal stability compared to other EO Materials. As a consequence, NLO chromophores herein are particularly suited for use as EO materials in connection with low power and small footprint devices, including devices used in data acquisition systems, analog I / O modules, field transmitters, lab and field instrumentation, servo drive control modules, direct current (DC) power supply, alternating current (AC), and / or electronic load.

The invention relates to an optoelectronic component (100) comprising a first electrode (2), a second electrode (9) and a stack (20) arranged between the first electrode (2) and the second electrode (9), the stack (20) comprising at least a first light-sensitive layer (4) and a second light-sensitive layer (7), the first light-sensitive layer (4) comprising at least one perovskite absorber material having a wide band gap, and the second light-sensitive layer (7) comprising at least one perovskite absorber material having a wide band gap. And the second light-sensitive layer (7) is an organic light-sensitive layer having a narrow band gap comprising at least one donor and at least one acceptor as an organic absorbent material forming a donor / acceptor heterojunction, where the at least one donor of the second light-sensitive layer is an A-D-A compound and / or a BODIPY compound.

The invention relates to an organic heterojunction-based light-temperature dual-response sensor element, which is prepared from a substrate, a source electrode, a drain electrode, a grid electrode, an organic active layer, a dielectric layer and a device encapsulation layer, and is characterized in that the organic active layer is composed of a Rho group and an imide group in a Rho diimide system organic small molecular structure; the compound has a long conjugated molecular structure, and charge transfer and energy level matching can be effectively promoted. The organic heterojunction structure has the advantages that the organic heterojunction structure has an interpenetrating network form, the donor-acceptor interface area is remarkably increased, so that the charge separation efficiency is enhanced, the carrier mobility is improved, the transconductance, the on-off ratio and the stability of a sensor element are improved, and the organic heterojunction structure has good solution processability and can be applied to the field of sensor devices. The method is suitable for large-area and low-cost flexible electronic manufacturing. The invention provides a new material system for light and temperature dual-response sensor elements, and has wide application prospects in the fields of wearable sensing, Internet of Things, environment monitoring and the like.

The invention relates to the field of organic photoelectric materials, in particular to an organic compound, a mixture and an organic photovoltaic device. The invention provides an organic compound as shown in a general formula (I), the compound has a large conjugate plane, and is beneficial to delocalization of electrons and improvement of the glass transition temperature; meanwhile, close packing like linear molecules is inhibited by the three-dimensional structure, so that excessive crystallization is inhibited; finally, the structure of three electron-withdrawing end groups of the organic compound provided by the invention provides a multi-dimensional electron transport channel, improves the electron mobility and inhibits recombination. Therefore, when the compound is used as an acceptor material to be applied to an organic photovoltaic device, excellent photoelectric conversion efficiency is shown.

This invention relates to the field of laser transfer technology, and more particularly to a high-throughput transfer method for solid-state thin films, comprising the following steps: A) preparing a transfer film and a acceptor substrate; the transfer film includes a flexible transparent substrate and a solid-state thin film adhered to the inner surface of the flexible transparent substrate; the thickness of the solid-state thin film is 2–20 μm; B) applying a transfer laser to the transfer film, allowing the transfer laser to pass through the flexible transparent substrate and irradiate the solid-state thin film, causing the solid-state thin film to melt, transfer, and deposit onto the acceptor substrate. The high-throughput transfer method for solid-state thin films proposed in this invention is advantageous in ensuring high-throughput transfer and achieving high-efficiency forming while not only improving transfer stability but also reducing application costs, thus overcoming the shortcomings of existing technologies.

The invention relates to the technical field of photoelectric materials, in particular to an asymmetric Y-series receptor and fluorene coupled compound and a preparation method and application thereof. The invention provides a fluorenyl-cyclic structure-asymmetric Y6 ternary fusion structure with a clear structure-function relationship. The rigid plane structure of fluorene provides excellent hole transport capability and inherent thermal form stability for molecules. The asymmetric Y6 can effectively regulate and control the energy level structure of molecules and enhance intramolecular charge transfer, and meanwhile, the asymmetric structure of the asymmetric Y6 is beneficial to inhibition of excessive crystallization and optimization of phase separation. The combination of the two can generate a synergistic effect. The fluorene unit can compensate voltage loss caused by introduction of bromine, and realizes wider spectral absorption and higher charge generation and transmission efficiency through combined action. A cyclic structure is introduced into a fluorene core, so that the LUMO energy level of the whole molecular receptor is effectively increased. The compound as an acceptor material is excellent in performance, has a three-dimensional charge transfer characteristic, and is beneficial to improvement of charge mobility.

The present invention provides a nitride semiconductor device that can introduce Mg at a high concentration while keeping the threshold low. [Solution] The normally-off transistor of the nitride semiconductor device comprises a gate insulating film provided on the first surface side of the nitride semiconductor substrate, a gate electrode provided on the gate insulating film, a p-type layer facing the gate electrode with the gate insulating film in between, and a polarization-doped layer facing the gate electrode with the p-type layer in between and in contact with the p-type layer. The Mg concentration of the p-type layer is 1 × 10⁻⁶ 18 cm -3 The above 1 x 10 20 cm -3 The following applies: The effective acceptor concentration in the p-type layer is Np(cm -3 Let the thickness of the p-type layer be dp (nm) and the polarization density of the polarization-doped layer be Npol (cm -3 If we let ) be the thickness of the polarization-doped layer be dpol (nm) and the aluminum (Al) concentration on the surface of the polarization-doped layer be Nal, then equations (1) and (2) hold true, respectively.

The invention belongs to the technical field of magnetic materials, and discloses a room-temperature molecular magnet and a preparation method and application thereof, the room-temperature molecular magnet is an organic eutectic, an acceptor in the organic eutectic is fullerene, and a donor in the organic eutectic is H2TPP, MgTPP, MnTPP, FeTPP, CoTPP, NiTPP, CuTPP or ZnTPP. The preparation method of the organic eutectic is simple, and the organic eutectic has good ferromagnetism at 300K, shows room-temperature magnetism and has good application prospects in magnetic semiconductors.

This invention discloses a method for achieving JTE junction termination in a GaN vertical structure pn diode, belonging to the field of wide bandgap semiconductor materials. The invention involves hydrogen plasma treatment near the etch boundary of the heavily doped p-type GaN layer, causing H ions to form Mg-H complexes with Mg acceptors in the heavily doped p-type GaN layer. Simultaneously, thermal annealing is used to diffuse H ions within the heavily doped p-type GaN, creating a gradually varying hole concentration gradient from the main junction region to the junction edge, thereby achieving JTE junction termination. Compared to existing junction termination technologies, this invention involves no etching, low damage, and effectively weakens the electric field accumulation effect, improving the device's breakdown voltage.

The invention relates to the field of organic photoelectric materials, in particular to an organic compound and an organic electronic device thereof. The organic compound provided by the invention has a structure as shown in a general formula (I), can be applied to organic electronic devices as an acceptor material, and shows efficient photoelectric properties when being matched with a proper donor material.

The present disclosure is a heat blocking device 101 that includes a heat blocking film 10 including: a particle that absorbs an infrared ray and generates an electron and a hole; and an acceptor that receives the electron or the hole from the particle. A charge carrier selected from the electron and the hole is released from the heat blocking film 10 to an outside of the device. The heat blocking device 101 can function as a “heat removing” device. The heat blocking film 10 may be a single-layer film or a multilayer film.

To provide a nitride semiconductor device with a high threshold voltage and high reliability. [Solution] A first nitride semiconductor layer 13 constituting the channel layer, a second nitride semiconductor layer 14 having a larger band gap than the first nitride semiconductor layer 13 and constituting the carrier supply layer, and a third nitride semiconductor layer 21 containing acceptor-type impurities are sequentially stacked. The third nitride semiconductor layer 21 is island-shaped, and a plasma processing region 21a is formed on its surface. The gate electrode 22 is in Schottky contact with the plasma processing region 21a.

The present document relates to a donor substrate for use in a method of light-induced component transfer to an acceptor substrate. The donor substrate comprises an optically transparent carrier and for supporting the at least one component prior to transfer, further comprises a contact layer on the optically transparent carrier configured to attach the component to the donor substrate. The contact layer comprises a release layer for being illuminated configured to release the component when exposed to the light beam. At least part of the contact layer is patterned such as to form contact elements connecting the component to the donor substrate over at least a contact area, such that a sum of the contact areas is smaller than a total area of the component's support surface.

This invention discloses a method for preparing a quasi-planar heterojunction active layer and an organic photovoltaic cell. The method includes: depositing a first layer on a substrate using electrostatic spraying; and depositing a second layer on the first layer using electrostatic spraying to obtain the quasi-planar heterojunction active layer; wherein the first layer is a donor layer and the second layer is an acceptor layer; or, the first layer is an acceptor layer and the second layer is a donor layer. This method for preparing a quasi-planar heterojunction has the following advantages: it does not wash away the underlying acceptor / donor during the deposition of the upper donor / acceptor layer, resulting in high material utilization; the fusion between the donor and acceptor layers can be adjusted and controlled by adjusting the substrate temperature and spray flow rate during the deposition of the second layer; it has high adaptability to substrate shape, allowing for co-formation on curved or slit flexible substrates; and the prepared quasi-planar heterojunction organic photovoltaic cell exhibits superior performance compared to electrostatically sprayed heterojunction organic photovoltaic cells.

An electro-optical device includes: a light emitting element including a first electrode having reflectivity, a first light emitting layer configured to emit light in a first wavelength region including a first wavelength, a donor layer, an acceptor layer in contact with the donor layer, a second light emitting layer configured to emit light in a second wavelength region including a second wavelength, and a second electrode having reflectivity and transparency, stacked in order. The first wavelength region does not overlap the second wavelength region.

The invention provides a method for enhancing second harmonic emission based on a nonlinear energy transfer mechanism, which comprises the following steps of: obtaining a heterojunction formed by a donor two-dimensional material A and an acceptor two-dimensional material B, and then exciting and inducing nonlinear energy transfer through a two-photon pump light source, thereby enhancing the second harmonic emission of the acceptor two-dimensional material B; in the heterojunction, the donor two-dimensional material A is (LA) 2 (A) n-1PbnI3n + 1; wherein LA is an alkyl ammonium ion or a phenylammonium ion of C3-C6; a is an alkyl ammonium ion of C1 to C2 or a formamide ion of C1 to C2; n is 1 to 4; and the receptor two-dimensional material B comprises at least one of MoS2, MoSe2, WSe2 and h-BN. According to the scheme, the SHG of the acceptor material can be effectively enhanced.

A nitride semiconductor device 1 includes a first nitride semiconductor layer 4 that constitutes an electron transit layer, a second nitride semiconductor layer 5 that is formed on the first nitride semiconductor layer and constitutes an electron supply layer, and a gate portion 20 that is formed on the second nitride semiconductor layer. The gate portion 20 includes a semiconductor gate layer 21 of a ridge shape that is formed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity and a gate electrode 22 that is formed on the semiconductor gate layer. The semiconductor gate layer is constituted of a gate layer main body portion 211 that is formed on the second nitride semiconductor layer and an upper protruding portion 212 that is formed on a width intermediate portion of an upper surface of the gate layer main body portion, and the gate electrode is formed on a top surface of the upper protruding portion.

A perovskite solar cell based on a non-fullerene acceptor material as a SnO2 interface modification layer and a preparation method thereof belong to the technical field of solar cells. The prepared solar cell adopts an n-i-p positive type structure of ITO / SnO2 / BDT-IC / Perovskite / Spiro-OMeTAD / Ag. In the application, a non-fullerene acceptor molecule BDT-IC based on benzodithiophene as a central core is used as an interface modification layer of the SnO2 electron transport layer, and a method for preparing a perovskite solar cell is further prepared. Using the material and device preparation method described in the application, the defects (for example, uncoordinated Pb ions) at the interface between the electron transport layer and the perovskite can be effectively passivated, the non-radiative recombination of the interface carriers is inhibited, the photovoltaic performance parameters such as open circuit voltage and short circuit current are increased, and the device performance is optimized. At the same time, the device preparation process is simplified, and the device stability is improved.