340 results about "Acceptor" patented technology

The invention relates to a photoactive device with organic layers, especially a solar cell, with a layer arrangement having an electrode and a counterelectrode as well as a sequence of organic layers arranged between the electrode and the counterelectrode, wherein two layers bordering on one another are formed in a photoactive region encompassed by the sequence of organic layers, namely, an exciton-harvesting layer (EHL) and an exciton-separating layer (ESL); in which the exciton-harvesting layer (EHL) is a mixed layer containing an organic material (A) and at least one further organic material (B), in which (i) a lowest singlet excitation state for excitons (S1A) of the organic material (A) is energetically higher than a lowest singlet excitation state for excitons (S1B) of the further organic material (B), (ii) the further organic material (B) is chosen such that it transforms singlet excitons into triplet excitons with a quantum yield of at least approximately 20%, preferably of at least approximately 50% by an ISC mechanism (ISC—Inter-System-Crossing), and (iii) a lowest triplet excitation state for excitons (T1B) of the further organic material (B) is energetically higher than a lowest triplet excitation state for excitons (T1A) of the organic material (A); and wherein a donor-acceptor heterojunction is formed between the exciton-harvesting layer (EHL) and the exciton-separating layer (ESL) converting triplet excitons of the organic material (A) into free charge carrier pairs in the vicinity of the interface.

A bismuth sodium titanate (Bi0.5Na0.5TiO3) base material is modified by the partial substitution of aliovalent A-site cations such as barium (as BaO) or strontium (as SrO), as well as certain b-site donor / acceptor dopants and sintering aids to form a multi-phase system, much like known “core / shell” X7R dielectrics based solely on BaTiO3. The resulting ceramic dielectric composition is particularly suitable for producing a multilayer ceramic capacitor (10) that maintains high dielectric constant (and thus the capability of maintaining high capacitance) over a broad temperature range of from about 150° C. to about 300° C. Such capacitors (10) are appropriate for high temperature power electronics applications in fields such as down-hole oil and gas well drilling.

The invention discloses triphenylamine spirofluorene derivatives and uses thereof. The general chemical structure of the triphenylamine spirofluorene derivatives is shown in the specification, wherein triphenylamine spirofluorene is the main body, and A is carbazole, alpha-carboline, beta-carboline, gamma-carboline, pyridine, diphenylamine, dimethoxydiphenylamine, dimethyldiphenylamine or 3,6-di-tert-butylcarbazole. The derivatives are good in thermal stability and hole conductivity. By simple methods, the degree of conjugation of the main body material is effectively controlled, the molecular weights of compounds are increased, the triplet state energy level and the glass-transition temperature of a material are largely increased, and the threshold voltage is obviously reduced. Polarity can be adjusted by adjusting donor / acceptor electronic groups. The bipolar performance is improved by adjusting the intensity of the donor / acceptor electronic groups. Compared with common phosphorescence main body materials, performance of devices prepared from the derivatives is improved and the derivatives can be widely applied in the field of organic electroluminescence.

A charge storage device is resistant to degradation in reducing atmospheres for use in dynamic random access memories. The device consists of a dielectric layer that is sandwiched between two electrodes and grown on a suitable substrate such as silicon or silicon coated with silicon dioxide. The dielectric layer is either (a) a modified composition of BaxSr1-xTiO3, 0<x<1 (BST) doped with acceptor type dopants such as Mn, Co, Mg, Cr, Ga and Fe ions as the dielectric layer in the capacitor; the acceptor ions can occupy the titanium sites to prevent the formation of Ti3+ and inhibit the formation of conductive BST by compensating the charges of the oxygen vacancies, and by trapping the free electrons more freely than Ti4+, or (b) modified dielectric compositions with alkaline-earth ions with compositions [(BaxMx)O]yTiO2 (where M can be Ca, Sr or Mg) with the value of y slightly larger than unity.

A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma treatment damages the surface of an oxide film formed on a n− type drift layer deposited on an n+ type semiconductor substrate. The oxide film is patterned to have tapered ends. Two proton irradiations are carried out on the n− type drift layer with the oxide film as a mask to form a point defect region in the vicinity of the surface of the n− type drift layer. Silica paste containing 1% by weight platinum is applied to an exposed region of the n− type drift layer surface not covered with the oxide film. Heat treatment inverts the vicinity of the surface of the n− type drift layer to p-type by platinum atoms which are acceptors. A p-type inversion enhancement region forms a p-type anode region.

A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

The invention discloses a novel gallium nitride based semiconductor laser epitaxial structure and a preparation method thereof. According to the invention, p-AlGaN with gradually variable Al components is adopted to act as an optical confinement layer, and through the principle of polarization doping, three-dimensional hole gas is realized. According to the invention, the activation efficiency ofan acceptor Mg impurity can be improved, the device voltage can be reduced, and simultaneously the internal loss of a laser can be reduced effectively.

A method using polyelectrolyte self-assembly for preparing multi-layered organic molecular materials having individual layers which exhibit ultrafast electron and / or energy transfer in a controlled direction occurring over the entire structure. Using a high molecular weight, water-soluble, anionic form of poly-phenylene vinylene, self-assembled films can be formed which show high photoluminescence quantum efficiency (QE). The highest emission QE is achieved using poly(propylene-imine) (PPI) dendrimers as cationic binders. Self-quenching of the luminescence is observed as the solid polymer film thickness is increased and can be reversed by inserting additional spacer layers of transparent polyelectrolytes between each active conjugated layer, such that the QE grows with thickness. A red shift of the luminescence is also observed as additional PPV layers are added. This effect persists as self-quenching is eliminated. Charge transfer superlattices can be formed by additionally incorporating C60 acceptor layers.

An organic light-emitting device (1) including, arranged in the following order: an anode (10), an emitting layer (40), a donor-containing layer (50), an acceptor-containing layer (60) and a cathode (70), the donor-containing layer (50) containing at least one selected from a donor metal, a donor metal compound and a donor metal complex.

An excellent EL device having low driving voltage, high luminous efficiency and long life can be obtained by using a charge-transporting thin film composed of a charge-transporting varnish which contains an arylsulfonic acid compound represented by the formula (1) or (2) below as an electron-acceptor material especially in an OLED device or a PLED device. [In the formulae, X represents O, S or NH; A represents a naphthalene ring or anthracene ring having a substituent other than X and n SO 3 H groups; B represents a substituted or unsubstituted hydrocarbon group, 1,3,5-triazine group or a substituted of unsubstituted group represented by the following formula (3) or (4): (wherein W 1 and W 2 each independently represents O, S, an S(O) group, an S(O 2 ) group, or a substituted or unsubstituted N, Si, P or P(O) group); n indicates the number of sulfonic acid groups bonded to A which is an integer satisfying 1<=n<=4; q indicates the number of B-X bonds which is an integer satisfying 1= C07C 309 / 43 H01L 51 / 50 0 23 2 2005 / 8 / 30 101039899 2007 / 9 / 19 000000000 Nissan Chemical Ind Ltd. Japan Yoshimoto Takuji Ono Go chencuan 11038 The Patent Agency of the Chinese Council for the Promotion of International Trade (CCPIT) No.1 Waidajie, Fuxingmen, Beijing 100086 Japan 2004 / 8 / 31 251774 / 2004 2007 / 4 / 11 PCT / JP2005 / 015689 2005 / 8 / 30 WO2006 / 025342 2006 / 3 / 9 Japanese

This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.

The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for producing a substrate having thereon a patterned small molecule organic semiconductor layer. The substrate having thereon a patterned small molecule organic semiconductor layer is produced by exposing a donor substrate having thereon a small molecule organic semiconductor layer to energy to cause the thermal transfer of a small organic molecule onto an acceptor substrate.

Methods of making a photovoltaic device with an organic liquid precursor having electron donor, electron acceptor, and liquid carrier are provided. The liquid precursor is applied to an electrode. A gas permeable layer / stamp contacts and applies pressure to the organic liquid precursor removing liquid carrier to form a solid active material with uniform interpenetrating network domains of electron donor / acceptor materials. A two-step process is also contemplated. A liquid precursor with either electron donor or acceptor is applied to an electrode, contacted under pressure with a first stamp having a nanoscale pattern, thus forming a solid with a patterned surface. Then, a second liquid precursor with the other of the electron donor or acceptor is applied to the patterned surface, contacted with a second stamp under pressure to form the active material. A transparent conducting electrode with material nanograting can be formed. The methods also include continuous processing, like roll-to-roll manufacturing.

Described herein are molecules for use in organic light emitting diodes. Example molecules comprise at least one acceptor moiety A, at least one donor moiety D, and optionally one or more bridge moieties B. Each moiety A is covalently attached to either the moiety B or the moiety D, each moiety D is covalently attached to either the moiety B or the moiety A, and each moiety B is covalently attached to at least one moiety A and at least one moiety D. Values and preferred values of moieties A, D, and B are defined herein.

The invention relates to a method for preparing a rare earth-gadolinium alloy by adopting a co-deposition method. The method is characterized by comprising the following steps: by taking a graphite block as an anode, a molybdenum rod as an inert cathode and a molybdenum crucible as a praseodymium-neodymium-gadolinium alloy acceptor, adding an electrolytic raw material into a fluoride molten salt electrolyte system containing rare earth fluoride, gadolinium fluoride and lithium fluoride the weight ratio of which is (6-3):(1.5-7):1, wherein the electrolytic raw material is a rare earth oxide and gadolinium fluoride mixture, and according to the weight percent, the rare earth oxide and gadolinium fluoride are respectively (99-35)% and (1-65)%; leading to direct current, wherein the current density of the anode is 0.5-2.0A / cm<2>, and the current density of the cathode is 5-25A / cm<2>; and electrolyzing at the electrolysis temperature of 1030DEG C-1200DEG C to obtain a rare earth-gadolinium alloy. The method has the advantages that the rare earth-gadolinium alloy is prepared by electrolyzing mixed oxides through the simple fluoride electrolyte system, so that the technological flow is simple, the cost is low, the ingredients of the product are stable, only CO2 and less CO are generated in the technological processes, so that the method is less in environmental pollution, is a green and environment-friendly technology and is suitable for large-scale production.

An organic electroluminescence device including: an anode; one or more organic thin film layers including an emitting layer; a donor-containing layer; an acceptor-containing layer; and a light-transmissive cathode in this order, wherein the donor-containing layer comprises a compound represented by the following formula (I) or (II):

Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting / controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

A light-emitting device comprising: a hole injection layer, an electron injection layer, and a composite emitter layer including a soft material exciton donor and exciton acceptor nanoparticles substantially dispersed within the exciton donor matrix, wherein electrons from the electron injection layer and holes from the hole injection layer generate excitons in the exciton donor matrix, and the primary mechanism of photon generation at the nanoparticles is substantially through non-radiative energy transfer of the generated excitons directly into the nanoparticles.

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

A photosensitive device includes a first organic material and a second organic material forming a donor-acceptor heterojunction electrically connected between an anode and a cathode, where the first organic material and second organic material each have a Franck-Condon Shift of less than 0.5 eV. Preferably, one or both of the first organic material and the second organic material have Franck-Condon Shifts of less than 0.2 eV, or better yet, less than 0.1 eV.

Belonging to the technical field of macromolecular functional materials and organic electronics, the invention provides a macromolecular compound containing boron-nitrogen coordinate bond, a preparation method and application thereof, and solves the technical problem of low mobility of organic conjugated macromolecular compounds in the prior art. The conjugated main chain of the macromolecular compound provided by the invention contains three fragments, namely an electron-deficient double boron-nitrogen coordinate bond bridged bipyridyl unit, an Ar unit and an electron-rich thiophene unit respectively, and the structural formula is shown as formula (I). The macromolecular compound has the characteristics of good planarity, strong crystallinity, strong intermolecular interaction, etc., andcan greatly improve the electron mobility of the material; the chemical structure is easy to modify, the energy level structure is adjustable, and the absorption spectrum is wide; and the macromolecular compound can be applied as the acceptor material of organic solar cells and the charge transport layer material of organic field effect transistors.

The invention relates to a non-equilibrium junction terminal architecture for a super-junction device. The junction terminal region of the terminal structure is provided with a plurality of uniform P pillars with different doping concentrations; the effective ion implantation area of the P pillars is correspondingly adjusted on the layout design according to the transverse electric field distribution conditions of all positions, so that the P pillars are completely exhausted when achieving the breakdown voltage; the ions are simultaneously implanted into all the P pillars under the masking of the mask sheet, thereby controlling the total amount of acceptor ions of all the P pillars in the junction terminal region; and after carrying out multiple extensions and multiple ion implantation processes, long-time high-temperature junction push is carried out to form several uniform P pillars with different doping concentrations. The invention can effectively improve the breakdown voltage characteristics of the junction terminal device, and has smaller junction terminal length, so that the total area of the device is reduced, thereby reducing the device conduction resistance on the same chip area.

A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).

A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

The invention belongs to the technical field of semiconductor devices and integrated systems and discloses a quantum dot-based electronic nose chip and a design method thereof. The design method includes the following steps that: (1) a gas sensor array on the electronic nose chip is designed; and (2) a signal processing unit and a micro control unit are designed. The step (1) further includes thefollowing steps that: (1-1) with a quantum dot material adopted as an olfactory acceptor material, a quantum dot gas sensor unit is designed, specifically, a resistive or field effect transistor typesensor unit on a substrate is designed; and (1-2) a quantum dot sensor array of an MEMS or TFT device structure is designed based on the quantum dot gas sensor unit. According to the quantum dot-basedelectronic nose chip and the design method thereof of the invention adopted, the quantum dot material is adopted as the olfactory receptor material; the micro-nano gas sensor is designed and prepared; the sensor array is obtained on the basis of the MEMS and TFT device structure; and the MCU containing a pattern recognition algorithm, and the signal processing unit are integrated on the chip, andtherefore, the quantum dot-based electronic nose chip which has the advantages of high sensitivity , small size and low power consumption can be obtained.

The invention provides a boron-containing heterocyclic compound and application thereof in an organic photoelectric device. The boron-containing heterocyclic compound is represented by a general formula (1) shown in the description. The invention further provides application of a material produced from the boron-containing heterocyclic compound in an organic electroluminescence element and application of the organic electroluminescence element in an organic electroluminescence display device. The boron-containing heterocyclic compound provided by the invention has a structure similar to a boron heteroanthracene derivative and has a proper donor-acceptor structure, a relatively small deltaEst energy value and a proper HOMO / LUMO value, the high brightness, low voltage, high efficiency and long service life of an organic EL element can be realized, and meanwhile, a material prepared from the compound has relatively high heat stability, is capable of remarkably improving the light-emittingstability of the luminescent device and can be widely applied to OLED luminescent devices and display devices to be used as a luminescent layer main body material or a thermally active delayed fluorescence luminescent material.

The invention, which belongs to the field of the organic polymer photovoltaic device or organic semiconductor film solar energy cell, discloses a dual-acceptor-contained three-element solar cell based on an inverse structure comprises a substrate, a transparent conductive cathode ITO, a cathode buffer layer, an optical active layer, an anode buffer layer, and a metal anode from bottom to top. The optical active layer includes the following components, by weight: 40% of electron donor, 10 to 50% of electron acceptor I, and 10% to 50% of electron acceptor II. According to the invention, with the dual electron acceptors, the light absorption waveband can be covered effectively; and on the basis of the stacking effect of acceptors, the crystallization of the thin film surface is optimized, the carrier transport is improved, the short-circuit current density of the device is enhanced, and the photoelectric conversion performance of the device is improved.

The invention discloses an AlGaN / GaN heterojunction HEMT device compatible with the Si-CMOS technology and a manufacturing method thereof. The device comprises an AlGaN / GaN heterojunction epitaxial layer, a passivation layer, a gate dielectric layer, a no-gold gate electrode and a no-gold source and drain electrode. The AlGaN / GaN heterojunction epitaxial layer comprises a substrate, a nitride nucleating layer, a nitride buffer layer, a GaN channel layer, an AlGaN intrinsic barrier layer and an AlGaN heavily doped layer which are arranged from the bottom to the top in turn. The AlGaN heavily doped layer generates charges through the ionized donor to compensate the surface acceptor level of the semiconductor to suppress current collapse and forms ohmic contact with the electrodes through lowtemperature annealing. The no-gold electrodes avoid pollution of Au to the Si-CMOS process line. Current collapse of the HEMT device can be effectively suppressed, the device performance can be enhanced, the process temperature can be reduced and the process flow can be simplified by using double AlGaN layers in the AlGaN / GaN heterojunction through combination of the no-gold electrode process andthe low temperature ohm process so that the technical bottleneck of compatibility of the AlGaN / GaN heterojunction HEMT and the Si-CMOS process can be solved and the manufacturing cost of the AlGaN / GaN heterojunction HEMT can be reduced.