6 results about "Magnetic semiconductor" patented technology

1. The name of the design product: heat sink (magnetic semiconductor 4-hole-shaped rotary cap type). 2. The use of the design product: heat dissipation product for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The application provides a transition metal atom and C vacancy co-doped 3C-SiC composite model and a modification method, which mainly comprises the following contents: constructing a 3C-SiC supercell; performing geometric optimization on the 3C-SiC supercell to obtain a 3C-SiC supercell with the lowest total internal energy of atoms; performing transition metal atom doping to obtain a transition metal atom doped 3C-SiC supercell; obtaining an optimized transition metal atom doped 3C-SiC supercell; removing any C atom nearest neighbor to the transition metal atom in the optimized transition metal atom doped 3C-SiC supercell to form a C vacancy, thereby obtaining a C vacancy and transition metal atom co-doped 3C-SiC composite model, and then performing geometric optimization on the obtained C vacancy and transition metal atom co-doped 3C-SiC composite model to obtain an optimized C vacancy and transition metal atom co-doped 3C-SiC composite model; compared with a traditional 3C-SiC-based diluted magnetic semiconductor, the magnetic moment of the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy is obviously improved, the spin polarization of surrounding atoms is strengthened, and the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy can be used for spin electronic devices.

1. The name of the design product: heat sink (magnetic semiconductor astronaut spin cap type). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

1. Name of the product in this design: Heat sink (magnetic semiconductor one-line screw cap type). 2. Purpose of this design: A heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

The application discloses a kind of dilute magnetic semiconductor thin film material epitaxial structure and preparation method, epitaxial structure includes by lower to upper sequentially arranged: p-GaAs substrate, p-ZnTe thin film layer, ZnTe stop layer, (Zn, Cr)Te magnetic layer, AlN insulating layer, Au voltage extraction layer, the doping element of the p-ZnTe thin film layer is N atom.The ZnTe stop layer is grown on p-ZnTe thin film layer and (Zn, Cr)Te magnetic layer, can prevent N atom in p-ZnTe thin film layer diffusion to (Zn, Cr)Te magnetic layer, to change the magnetism characteristic of containing (Zn, Cr)Te magnetic layer, and further improve the effective operating temperature of device.