42 results about "Magnetic semiconductor" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

1. The name of the design product: heat sink (magnetic semiconductor 4-hole-shaped rotary cap type). 2. The use of the design product: heat dissipation product for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

1. The name of the design product: magnetic semiconductor heat sink (oblong lamp effect). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention belongs to the technical field of magnetic materials, and discloses a room-temperature molecular magnet and a preparation method and application thereof, the room-temperature molecular magnet is an organic eutectic, an acceptor in the organic eutectic is fullerene, and a donor in the organic eutectic is H2TPP, MgTPP, MnTPP, FeTPP, CoTPP, NiTPP, CuTPP or ZnTPP. The preparation method of the organic eutectic is simple, and the organic eutectic has good ferromagnetism at 300K, shows room-temperature magnetism and has good application prospects in magnetic semiconductors.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

1. Name of the design product: magnetic semiconductor heat sink (center with screen). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

1. The name of this design product: Magnetic semiconductor heat sink (ultra-thin round type). 2. Purpose of this design product: a heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 1.

1. Name of this design product: Magnetic Semiconductor Radiator (Liquid Cooling SY‑10). 2. Purpose of this product design: This product design is used for heat dissipation. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture. 5. Other situations that require explanation Other explanations: The length of the omitted part of this design product is indefinite.

1. The name of the design product: heat sink (magnetic semiconductor round type 3 cone). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The application belongs to the technical field of life science, and relates to a multifunctional composite biological probe and a preparation method and application thereof.The multifunctional composite biological probe comprises one or more than one of a noble metal SERS biological probe and one or more than one of a magnetic semiconductor SERS biological probe.The application realizes the functional superposition of the noble metal SERS biological probe and the magnetic semiconductor SERS biological probe in the simplest and most effective way, improves the sensitivity and accuracy of the detection method, and endows the detection method with the magnetic enrichment characteristic.

1. The name of this design product: Magnetic semiconductor radiator (rotor TL23). 2. Purpose of this product: a heat dissipation product for cooling mobile phones. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

This application proposes a strong ferromagnetic ceramic thin film based on iron-tin co-doped amorphous gallium oxide, belonging to the technical field of magnetic semiconductor ceramic materials. The invention involves thoroughly mixing Ga, Fe, and Sn organic precursor solutions in a specific ratio to form a GaFeSn organic precursor solution; spin-coating the GaFeSn organic precursor solution onto a cleaned single-crystal alumina substrate; then placing the resulting GaFeSn organic precursor film into a single-temperature tube furnace; under an air atmosphere, slowly raising the furnace temperature to 550°C at a rate of 5°C / min, and annealing at 550°C for 1 hour to prepare a uniformly thick amorphous GaFeSnO magnetic ceramic thin film with strong ferromagnetism. This invention excites strong ferromagnetism in the film with a relatively low iron doping concentration (10%), solving the problem of low conductivity caused by transition metal doping in magnetic ceramic thin films. The amorphous GaFeSnO magnetic ceramic thin film prepared by this invention exhibits a conductivity of 170 emu / cm² at 2K. 3 90 emu / cm at 300K 3 It has strong ferromagnetism and a Curie temperature as high as 335K.

The application provides a transition metal atom and C vacancy co-doped 3C-SiC composite model and a modification method, which mainly comprises the following contents: constructing a 3C-SiC supercell; performing geometric optimization on the 3C-SiC supercell to obtain a 3C-SiC supercell with the lowest total internal energy of atoms; performing transition metal atom doping to obtain a transition metal atom doped 3C-SiC supercell; obtaining an optimized transition metal atom doped 3C-SiC supercell; removing any C atom nearest neighbor to the transition metal atom in the optimized transition metal atom doped 3C-SiC supercell to form a C vacancy, thereby obtaining a C vacancy and transition metal atom co-doped 3C-SiC composite model, and then performing geometric optimization on the obtained C vacancy and transition metal atom co-doped 3C-SiC composite model to obtain an optimized C vacancy and transition metal atom co-doped 3C-SiC composite model; compared with a traditional 3C-SiC-based diluted magnetic semiconductor, the magnetic moment of the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy is obviously improved, the spin polarization of surrounding atoms is strengthened, and the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy can be used for spin electronic devices.

The application provides a kind of iron-doped gallium oxide-based strong ferromagnetic ceramic film material and a preparation method thereof, and relates to the technical field of magnetic semiconductor ceramic materials.The Ga organic precursor solution and the Fe organic precursor solution are prepared first;Then the Ga and Fe organic precursor solutions are mixed in a certain proportion to form a GaFe organic precursor solution;The GaFe organic precursor solution is spin-coated on a cleaned single-crystal alumina substrate;The obtained GaFe film is placed in a single-temperature zone tube furnace;In an air atmosphere, the temperature of the tube furnace is first increased to 550 DEG C at a slow rate of 2 DEG C / min, and then annealed for 1 h, and then increased to greater than or equal to 750 DEG C at the same heating rate for annealing treatment, and then annealed for 1 h, thereby preparing a GaFeO magnetic ceramic film with a very uniform surface and strong ferromagnetism.The preparation method of the application has low environmental requirements, and the GaFeO magnetic ceramic film prepared by the application has good crystallinity and crystalline orientation, excellent strong ferromagnetism, and a Curie temperature higher than 352 K.

1. The name of this design product: Magnetic semiconductor radiator (round). 2. Purpose of this design product: a heat dissipation product used to cool down mobile phones. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

A detection element according to an embodiment of the present disclosure comprises: a detection unit that includes one or both of a polar metal and a polar semiconductor, and has a break in spatial inversion symmetry due to magnetic ordering; and an output unit that outputs, as a detection signal, fluctuations in a physical quantity being detected, which are fluctuations in a physical quantity in a direction orthogonal to a direction in which spatial inversion symmetry in the detection unit is broken.

1. Name of the design product: magnetic semiconductor heat sink (square). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

1. The name of the design product: magnetic semiconductor heat sink (with mobile power supply). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention relates to the technical field of nano materials, and particularly discloses a method for heteroepitaxy of a large-area single-layer chromium triiodide magnetic semiconductor film on a Van der Waals substrate HOPG, which comprises the following steps: taking an A-level HOPG (0001) surface as a substrate, carrying out mechanical cleavage on the A-level HOPG (0001) surface, detecting the surface quality after cleavage by a scanning tunneling microscope, and carrying out ultrahigh vacuum annealing and degassing. Testing a scanning tunneling microscope morphology graph in a constant current mode before and after growth; and epitaxially growing a single-layer CrI3 film in a room-temperature high-iodine atmosphere in a cavity with background vacuum superior to 3 * 10 <-10 > mbar. Through the molecular beam epitaxy technology, the obtained CrI3 sample has high crystal quality and low surface roughness and has great application prospects in the fields of two-dimensional spin electronic devices, light-operated magnetic devices, quantum topological elements and the like, and the method is high in repeatability and has certain economic value.

The application provides a Mn-doped GeSe-based magnetic semiconductor thin film-based memristor and a preparation method, relates to the technical field of memristors, and comprises, from bottom to top, a substrate layer, a resistance change medium layer and a top electrode layer, wherein the resistance change medium layer is a Mn-doped GeSe-based magnetic semiconductor thin film, and the thickness of the Mn-doped GeSe-based magnetic semiconductor thin film is 100 nm to 700 nm. The memristor of the application takes the Mn-doped GeSe-based thin film with strong ferromagnetism as the resistance change medium layer material, introduces the magnetism of the material into the resistance change process of the device, so that the memristor exhibits typical resistance transition characteristics and biological synapse characteristics, and the memristor of the application exhibits magnetic field-adjustable resistance transition characteristics and biological synapse plasticity, and shows great application potential in multifunctional nonvolatile memristor devices and neuromorphic electronic devices.

To provide a detection element and detection module that can detect fluctuations in physical quantities with a relatively simple configuration. [Solution] The detection element comprises a detection unit that includes one or both of a magnetic metal and a magnetic semiconductor and has a breaking of spatial inversion symmetry due to magnetic order, and an output unit that outputs a fluctuation of a physical quantity in a direction orthogonal to the direction of the breaking of spatial inversion symmetry in the detection unit, which is the fluctuation of the physical quantity to be detected, as a detection signal.

The application belongs to the technical field of semiconductor thin film materials, and particularly relates to a diluted magnetic semiconductor thin film for In-based semiconductor materials. 2‑x M x O3, the doping element is a non-magnetic transition metal M, which is one or more of Fe, Mn, Co or Ni, and 0 < x < 0.1. The application adopts a laser pulse deposition technology (PLD) based on a ceramic target material to prepare an InO-based diluted magnetic semiconductor thin film with room-temperature ferromagnetism by means of a transition metal ion as a donor doping mode. The PLD technology of the application can incorporate a high proportion of transition metal ions into the InO lattice, and a large number of lattice defects can be introduced by controlling the deposition conditions, so that a ferromagnetic thin film material higher than room temperature is induced, which can be applied to spin electronic devices.

The application provides a method for preparing a magnetic semiconductor thin film, which comprises the following steps: (1) placing a polycrystalline magnetic semiconductor target into a thin film deposition chamber; (2) placing K single element and Mn single element as beam source materials into two beam source furnaces respectively; (3) cleaning a substrate, and then mounting the cleaned substrate on a substrate table; (4) then, heating the substrate table and the substrate; (5) controlling the air pressure of the thin film deposition chamber to be 6-100 Pa by means of a non-reactive gas, and then using a molecular beam assisted pulsed laser deposition method to epitaxially grow a thin film on the substrate; and (6) after the thin film is grown, adjusting the air pressure of the thin film deposition chamber and cooling the substrate, so as to obtain a magnetic semiconductor thin film (Ba 1‑x K x )(Zn 1‑y Mn y )2As2, wherein 0.08

The application discloses an electrically controlled magnetic device based on Ga-based ultraroom-temperature van der Waals ferromagnetic material and belongs to the technical field of magnetic devices. The Ga-based ultraroom-temperature van der Waals ferromagnetic material, the non-magnetic semiconductor, the Ga-based ultraroom-temperature van der Waals ferromagnetic material and the non-magnetic gate dielectric are sequentially arranged from bottom to top; four electrodes are further included; the first electrode and the second electrode are in contact with the upper Ga-based ultraroom-temperature van der Waals ferromagnetic material respectively; the third electrode is in contact with the lower Ga-based ultraroom-temperature van der Waals ferromagnetic material; and the fourth electrode is in contact with the non-magnetic gate dielectric. The Ga-based ultraroom-temperature van der Waals ferromagnetic material used in the application can realize effective switching of high and low configurations below the Curie temperature (400-800K), and the critical current density is as low as 4A / cm 2 The room-temperature tunneling magnetoresistance of the device can be effectively adjusted by a gate voltage (-20V-20V) or a gate current (-100muA-100muA), and the adjustment range is 30%-300%.

1. Name of the product in this design: Circular magnetic semiconductor heat sink (6-pointed star). 2. Purpose of this design: A heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

1. The name of this design product: Magnetic semiconductor radiator. 2. Purpose of this design product: a heat dissipation product used to cool down mobile phones. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

1. The name of the design product: round magnetic semiconductor heat sink (V-shaped triangular). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention relates to the technical field of electronic devices, in particular to a memristor and a preparation method thereof.The memristor comprises a lower electrode, a resistive random dielectric layer and an upper electrode which are sequentially arranged in a stacked mode, each of the lower electrode and the upper electrode comprises a single-layer or multi-layer metal film, and the resistive random dielectric layer is a Fe-doped TiO2-based magnetic semiconductor film; the concentration of Fe atoms in the Fe-doped TiO2-based magnetic semiconductor thin film is 0.5 to 5 at%. According to the memristor, the Fe-doped TiO2-based thin film with high ferro-magnetism serves as the resistance change medium layer, the magnetic characteristic and the resistance change process are coupled, the memristor has the typical resistance conversion characteristic, the resistance conversion behavior with the adjustable magnetic field can be achieved, the memristor has the high stability, low power consumption and the multi-field regulation and control capacity, the preparation method is simple and easy to implement, and the application range is wide. Moreover, the method is highly compatible with a CMOS technology, and can effectively meet the demands of miniature manufacturing and device integration.