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249 results about "Magnetic semiconductor" patented technology
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Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers (n- or p-type), practical magnetic semiconductors would also allow control of quantum spin state (up or down). This would theoretically provide near-total spin polarization (as opposed to iron and other metals, which provide only ~50% polarization), which is an important property for spintronics applications, e.g. spin transistors.
Non-magnetic semiconductor spin transistor
InactiveUS20050263751A1High sensitivityNanoinformaticsSolid-state devicesTunnel diodeDevice material
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and / or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and / or high-density and / or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and / or spin detection.
Owner:UNIV OF IOWA RES FOUND
Nanoelectric memristor device with dilute magnetic semiconductors
A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich / stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich / stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich / stochiometric metal oxide layer that is opposite from the oxygen-rich / stochiometric metal oxide layer.
Owner:UNIVERSITY OF TOLEDO
Magnetic field sensor utilizing anomalous hall effect magnetic film
InactiveUS6937434B2Minimal lossImprove efficiencyNanomagnetismSolid-state devicesMagnetic semiconductorCondensed matter physics
Owner:HITACHI LTD
Magnetic field sensor utilizing anomalous hall effect magnetic film
InactiveUS20050007694A1High outputMinimal lossNanomagnetismMagnetic measurementsIn planeMagnetic semiconductor
A magnetic field sensor for sensing an applied magnetic field by utilizing a Hall effect. Used, as a sensor portion, are compound materials such as FeN showing a significant anomalous Hall effect, and materials containing magnetic properties such as a magnetic semiconductor having a zincblende structure and oxide having a perovskite structure. A device structure of the magnetic field sensor is adopted, in which by providing a current terminal to a film and a voltage terminal thereof respectively in a film thickness direction and in an in-plane direction, the magnetic field can be guided into the in-plane direction.
Owner:HITACHI LTD
Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head
A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.
Owner:HITACHI LTD
Co-Ga co-blended ZnO based diluted semi-conductor thin-film and manufacturing method thereof
InactiveCN101483219AMature technologyEasy to operateVacuum evaporation coatingGalvano-magnetic material selectionMagnetic semiconductorRoom temperature
The invention discloses a Co-Ga codoped Zno base diluted magnetic semiconductor film, wherein a Co molar content is more or equal than 2and less or equal to 10, a Ga molar content is more or equal to 1and less or equal to 3 The diluted magnetic semiconductor film is prepared by a pulsed laser deposition method and a pure ZnO, Co2O3, a Ga2O3 powder mixed sintered ceramic chip is employed as a target material. A substrate is placed in a growth chamber of a pulsed laser deposition device after cleaning the substrate, and the growth chamber is vacuumized to a background vacuum less than 8.0 *10 Pa. The mixture is grown under an O2 atmosphere with a pressure of 2-15Pa and a temperature of 350-700 DEG C. The preparation method of the invention is simple, an n type doping carrier concentration can reach 5.0*10-5.0*10 cm and simultaneously have a room temperature iron magnetic property.
Owner:ZHEJIANG UNIV
Method for preparing Cr doped ZnO-based diluted magnetic semiconductor film material
InactiveCN101615467ASimple preparation processIncrease deposition rateVacuum evaporation coatingSputtering coatingDevice materialCurie temperature
The invention relates to a method for preparing a Cr doped ZnO-based diluted magnetic semiconductor film material, belonging to the preparation field of novel semiconductor spintronics device materials. The method adopts double targets cosputtering of chromium and zinc oxide, wherein the background vacuum degree of the system is 10<-5>Pa-10<-3>Pa; high-purity argon is used as working gas in the sputtering process; the flow rate of the high-purity argon is 5-15 cm<3> / min; the working gas pressure is 10<-2>-10<-1>Pa in the sputtering process; and the distance between a target material and a basal body is 35-70 mm. Ultrasonic cleaning is carried out on the basal body, oxide and other impurities of the surface of the basal body are removed, and the ZnO-based diluted magnetic semiconductor film materials with different doping concentrations are obtained through changing different target powers. The method has simple preparation process and high deposition rate and can obtain the diluted magnetic semiconductor film material with room-temperature ferromagnetism, high Curie temperature and controllable performance, thereby having important research value and wide application prospect.
Owner:UNIV OF SCI & TECH BEIJING
Magnetic switching element and a magnetic memory
InactiveUS20080121945A1Merit on industry is greatMagnetic measurementsMagnetic-field-controlled resistorsMagnetic semiconductorMagnetic memory
Owner:KK TOSHIBA
Magnetic semiconductor memory and the reading method using spin-polarized electron beam
InactiveUS6912148B2NanoinformaticsSemiconductor/solid-state device manufacturingSemiconductor materialsMagnetic semiconductor
A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.
Owner:INTEL CORP
Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method
InactiveUS20050117617A1Improve efficiencyImprove emission efficiencyLaser active region structureNanoopticsMagnetic semiconductorTransition metal atoms
Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting / controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.
Owner:JAPAN SCI & TECH CORP
Oxidate magnetic semiconductor thin film capable of regulating electric transport property and method of preparing the same
InactiveCN101256869AImprove magnetismHigh curie temperatureInorganic material magnetismCathode sputtering applicationOxygen vacancyHigh resistivity
The present invention provides oxide magnetic semiconductor film with adjustable electronic transport properties and manufacture method thereof, which belongs to information technology rotating electron material field. The series oxide magnetic semiconductor film displays common electric transport property: material with low electric resistivity being Mott range transition resistor, material with middle electric resistivity being hard Efros range transition resistor, material with high electric resistivity being hardgap resistor. The super thin iron magneto- metallic layer and the wide forbidden region oxide semiconductor layer are alternating deposited on substrate by using the method of magnetron sputtering or pulsed laser depositing through accurate control partial pressure of oxygen in film preparation process to regulate electric transport property of material. Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
Owner:SHANDONG UNIV
A novel method for measuring current carrier mobility of magnetic semiconductor
InactiveCN1971295AAvoiding the effects of anomalous Hall effectReduce testing costsMagnetic measurementsElectrical testingMagnetic semiconductorCharge carrier mobility
The invention relates to a detecting method for the magnetic semiconductor carrier mobility, which is used to solve the abnormal Hall Effect of the magnetic semiconductor, the method of detecting movability with the common Hall Effect which is used to detect the non-magnetic semiconductor carrier density and the mobility is not suit for it. According to the literature document, there isn't a method to detect the magnetic semiconductor carrier mobility at present. The invention provides that the electrochemistry C-V method combines with the Van de Pol method (magnetic field is not needed), the magnetic semiconductor carrier mobility is measured by the electrochemistry C-V method, the electrical resistivity is measured by the Van de Pol method, and the magnetic semiconductor carrier mobility is determined according to the relationship of the carrier density, electrical resistivity and the carrier mobility. The invention doesn't relate to the Hall measurement and avoid the influence of Hall Effect. The characteristics of invention are that it needn't the specially-produced equipment, easy to operate and measure accuracy.
Owner:杨瑞霞
Yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and fabrication method of microtube
InactiveCN102910598AIncrease productionHigh purityNitrogen compoundsInorganic material magnetismAl powderNitrogen gas
The invention discloses an yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and a fabrication method of the microtube, which belong to the technical field of semiconductor spinning electron device materials. The yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube is in a hexagon column structure, the outside surface of the microtube is smooth, and uneven folds are formed in the microtube, so that a multi-hole structure is formed. The fabrication method comprises the steps that Al powder and Y powder are taken as raw materials, nitrogen is taken as reaction gas, the fabrication is conducted in a direct-current arc plasma discharging device, a reaction chamber is vacuumed, the reaction gas is filled into the reaction chamber for discharging, the power is cut off after 3-5 minutes of the discharging reaction, and plush blocks are collected in a cathode sediment zone of a tungsten rod after standing and argon passivation. Fabricated samples are large in output, high in purity, complete in crystal form and uniform in size; the fabrication time is short; and the energy consumption and cost are low. No substrates, templates or catalyzers are needed in the fabrication process, and the fabrication method is environment-friendly and high in repeatability.
Owner:JILIN UNIV
Magnetic semiconductor memory device
InactiveUS20040105326A1Magnetic-field-controlled resistorsSolid-state devicesMagnetic semiconductorMagnetic reluctance
A memory cell in a so-called MRAM by utilizing a tunnel magnetic resistance in the prior art has raised problems that a magnetic field to be applied to a TMR element is essentially weak since a word line for write is disposed apart from the TMR element, that a large current is required at the time of a writing operation, and that electric power consumption is large. In order to solve the above-described problems experienced in the prior art, the present invention provides an MRAM memory cell structure and its fabricating method in which a word line for write is disposed near a TMR element and surrounds it in three directions.
Owner:RENESAS TECH CORP
(GeTe)*(SbTe*)*base dilute magnetic semiconductor material for storing information
InactiveCN101630559AGalvano-magnetic material selectionInorganic material magnetismRare-earth elementExternal energy
The invention discloses (GeTe) a (Sb2Te3) b base dilute magnetic semiconductor material for storing information, which is characterized of doping (GeTe) a (Sb2Te3) b alloy, wherein the percentage composition of doping dose is larger than 0 and is less than 40%, doping element is one of magnetic iron, cobalt, nickel and manganese or rare earth element, or mixture thereof. Under the function of external energy, the invention can realize reversible material between crystalline state and amorphous state. The material can realize the change of resistance value from twice to several magnitude range before and after reversibility; simultaneously, the light reflectivity of the material is different before and after the reversibility; and the material has variable magnetisms before and after the reversibility or the material has a certain different magnetic intensity before and after the reversibility, when a magnetic detector scans, different magnetic signals recorded in the two different regions of amorphous phase and crystal phase can be detected or converted into an electric signal to be detected, are respectively expressed to be 0 and 1, and is applicable to phase change storage, light storage and magnetic storage.
Owner:BEIJING UNIV OF TECH
Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film
InactiveCN101736303AChoose simpleIncrease usageVacuum evaporation coatingSputtering coatingUltra-high vacuumTitanium nitride
The invention relates to a preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film. An ultrahigh vacuum facing target magnetron sputtering coating machine is adopted, a pair of Ti targets of which the purity is 99.99% is installed on an opposite target head, and a Cr sheet is put on the surface of the Ti target; facing target magnetron sputtering equipment is started to successively start a first-stage mechanical pump and a second-stage molecular pump for vacuumizing until the back vacuum degree of a sputtering chamber is 2*10-4 Pa; mixed gas of Ar and N2 is led into the vacuum chamber to keep the vacuum degree to 1 Pa; a sputtering power supply is started to apply 0.3A of current and about 500V of DC voltage on a pair of Ti targets to cause sputtering current and voltage to be stable; after sputtering, the sputtering gas Ar and N2 are stopped to be led in, a gate valve is totally opened to continue vacuumizing, and the vacuum system is closed; the vacuum chamber is opened to take out the sample. Compared with Cr-doped TiN films prepared with other methods, the film prepared with the invention has room temperature ferromagnetism; the adopted method is simple and practical and is favorable for popularizing in industrial production.
Owner:TIANJIN UNIV
Magneto-optic circular polarization dichroism measuring system capable of adjusting measuring geometry
InactiveCN101196559AGood collimationNo lossMagnetic property measurementsTesting optical propertiesFrequency spectrumLantern
A measuring system for measuring the dichroism of the magneto-optical circular polarization with adjustable measuring geometry is provided, whose structure is that: a femtosecond laser excites the white light of the ultra-continuous spectrum, and divides the light by a monochrometer, which forms a monochromatic light whose wavelength can be adjustable. The monochromatic light can polarize through a purified Glan-Taylor prism with the extinction coefficient of 10 <5>; a lantern fly modulator, whose optical axis is 45degree angled with the optical axis of the Glan-Taylor prism to make the light become the circularly polarized light with the alternative variation of the sinistrality and the dextrorotation; a sample, which is put on the center of the cryogenic magnet; The circularly polarized light focuses on the sample, and the reflex reflected from the sample is focuses on the first LED detector; a phase-locking amplifier, whose reference signal is provided by the lantern fly modulator used for testing the difference of light intensity between the sinistrality and the dextrorotation of the circularly polarized light. The invention can not only test the frequency spectrum of the dichroism of the magneto-optical circular polarization of the materials, magnetic density and temperature dependence, but also can test the magnetocrystalline anisotropy of the magnetic semiconductor.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line
InactiveCN1810649AMeet the needs of productionImprove magnetic propertiesZinc oxides/hydroxidesMagnetic semiconductorManganese
The present invention provides one low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zinc oxide line, and belongs to the field of nanometer material preparing technology. The technological process includes the following steps: cutting silicon wafer into chips with diamond cutter and setting in culture dish; mixing pure zinc powder and manganese chloride powder in the weight ratio of 1:3 to 1:1; reaction in a tubular furnace to obtain the yellow product deposited on the silicon chip; and observing the deposited nanometer line on the silicon chip with a scanning electronic microscope. The present invention is superior in that the prepared Mg-doped nanometer zinc oxide line has diameter of 50 nm, smooth surface, high yield and excellent magnetic performance.
Owner:UNIV OF SCI & TECH BEIJING
Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method
InactiveUS7254150B2Improve efficiencyImprove emission efficiencyLaser active region structureNanoopticsMagnetic semiconductorTransition metal atoms
Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting / controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.
Owner:JAPAN SCI & TECH CORP
ZnO-based diluted magnetic semiconductor thin film and preparation method thereof
InactiveCN103074576AVacuum evaporation coatingSputtering coatingMagnetizationPulsed laser deposition
The invention discloses a ZnO-based diluted magnetic semiconductor thin film and a preparation method of the ZnO-based diluted magnetic semiconductor thin film. The analyzed pure metal nitrate is taken as a raw material, and a method 1 comprises the following steps of: obtaining a doped ZnO powder body by a water solution coprecipitation method, sintering by a solid-phase method to obtain a ceramic target material, and preparing into a doped diluted magnetic semiconductor ZnO thin film by a pulsed laser deposition (PLD) method. Or the analyzed pure metal nitrate is taken as a raw material, and a method comprises the step of preparing a doped ZnO-based diluted magnetic semiconductor ZnO thin film through the technological process of preparing sol, spinning and thermally treating by a sol-gel method. The energy gap of the prepared ZnO-based thin film can be adjusted and controlled due to the doping of Mg and Cd, so that the ferromagnetism of the ZnO-base thin film can be adjusted and controlled. The Co-doped or Mn-doped ZnO-based diluted magnetic semiconductor thin film can be co-doped into the Cd, so that band gap can be reduced, and the room-temperature saturation magnetization of the thin film can be enhanced; and the band gap can be enlarged due to the codoping of Mg, so that the room-temperature saturation magnetization of the thin film can be reduced.
Owner:TSINGHUA UNIV
Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof
InactiveCN1924095AEasy to prepareFerromagneticLiquid/solution decomposition chemical coatingScientific domainMagnetic semiconductor
The invention discloses an oxide base rare magnetic conductive film and preparing method with indoor temperature magnet in the material scientific domain, which is characterized by the following: displaying the component as LixNi1-x-yMyO (o<=x<=0.1; o C23C 30 / 00 C23C 18 / 02 4 5 1 2006 / 9 / 1 1924095 2007 / 3 / 7 100451172 2009 / 1 / 14 2009 / 1 / 14 2009 / 1 / 14 Tsinghua University Beijing 100084 Lin Yuanhua Nan Cewen Zhao Rongjuan liguang song 11246
Owner:TSINGHUA UNIV
Method for preparing Fe doped ZnO room-temperature diluted magnetic semiconductor material
InactiveCN101224904ARoom temperature ferromagneticSimple processZinc oxides/hydroxidesMagnetic semiconductorRoom temperature
The invention provides a method for preparing a Fe-doped ZnO room temperature diluted magnetic semiconductor material, which adopts a coprecipitation method and includes: A. prepare a mixed solution of Fe<3+> and Zn<2+> and a NaOH solution; B. mix the mixed solution of Fe<3+> and Zn<2+> and the NaOH solution to form a precipitate, then filter, separate and wash the precipitate; C. dry, pre-sinter, grind, tablet and sinter the precipitate to obtain the Fe-doped ZnO room temperature diluted magnetic semiconductor material. The invention provides a completely new method for preparing the Fe-doped ZnO room temperature diluted magnetic semiconductor material and the Fe-doped ZnO room temperature diluted magnetic semiconductor material prepared by the method has room temperature ferromagnetism.
Owner:HUAZHONG UNIV OF SCI & TECH
Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
InactiveCN101262040AHighly integratedImprove data storage capacityGalvano-magnetic devicesSolid-state devicesLead zirconate titanateHeterojunction
The invention discloses an oxide diluted magnetic semiconductor / ferroelectric heterojunction structure which consists of the following three layers: a base layer is a substrate; a middle layer is an oxide diluted magnetic semiconductor film and an upper layer is a ferroelectric film. The substrate is Si, sapphire, SrRuO3 or other perovskite oxide substrates; the oxide diluted magnetic semiconductor film is large energy gap oxide films of ZnO, TiO2 or SnO2 doping with transition metal elements of Mn, Fe, Co, Ni or Cr; the ferroelectric film is films of lead zirconate titanate, Nd-Bi titanate or barium strontium titanate. The invention also discloses two preparation methods of the oxide diluted magnetic semiconductor / ferroelectric heterojunction structure, namely, a pulsed laser deposition method and a sol-gel method. The oxide diluted magnetic semiconductor / ferroelectric heterojunction structure can carry out non-volatile modulation of ferromagnetism under the effect of an applied electric field and can be widely applied to the fields of electronic computers, spin electronics and non-volatile memorizers.
Owner:XIANGTAN UNIV
P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof
InactiveCN101488387AWell mixedReproducibleInorganic material magnetismInductances/transformers/magnets manufactureMolecular levelStructural formula
The invention discloses a p type doped CuCro2-based dilute magnetic semiconductor material and a manufacturing method thereof. The CuCro2-based dilute magnetic semiconductor polycrystal block is manufactured, and has a molecular structural formula of CuCr(1-x)TMxO2, wherein, TM is transition metal elements which are Fe, Co, Ni, Mn, and the concentration thereof x is more than or equal to 0 and is less than or equal to 0.2. Cupric acetate, chromic nitrate and transition metal salt are measured according to a mole ratio of cupric, chromic to transition metal of 1: (0.80-1): (0-0.20), the powder is added into distilled water and added with adequate amount of citric acid, and then stirred at room temperature till fully dissolved, thereby obtaining a well mixed solution; then, after processes of parching, grinding, tablet compressing and heat treatment, dilute magnetic semiconductor block material of CuCr(1-x)TMxO2 is manufactured. The invention adopts a sol-gal method and has the advantages of low energy consumption, simple technique and the like. In the invention, all of the components in the solution are well mixed, and the uniformity degree can reach molecular level, so that multi-component homogenous dopant can be manufactured was well as products that are hard to be obtained by traditional solid phase methods. And experiment results have repeatability.
Owner:ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Magnetic switching element and a magnetic memory
InactiveUS20050012129A1Merit on industry is greatTransistorMagnetic measurementsMagnetic semiconductorMagnetic memory
A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic semiconductor layer changes its state from a paramagnetic state to a ferromagnetic state by applying a voltage thereto, and a magnetization corresponding to the magnetization of the ferromagnetic layer is induced in the magnetic semiconductor layer by applying a voltage to the magnetic semiconductor layer.
Owner:KK TOSHIBA
A ZNO-based dilute magnetic semiconductor thin film with intrinsic ferromagnetism and its preparation method
ActiveCN102270737ALow growth temperatureImprove uniformityVacuum evaporation coatingGalvano-magnetic material selectionRare earthInductively coupled plasma
The invention belongs to the technical field of semiconductor film materials and relates to a rare-earth metal ion doped ZnO diluted magnetic semiconductor film with high quality, low resistivity and intrinsic ferromagnetism and a preparation method thereof. The chemical composition of the film provided by the invention is in accordance with the general chemical formula, namely, Zn1-x-yErxAlyO, wherein x is greater than 0 and less than or equal to 0.03, and y is greater than 0 and less than or equal to 0.02. In the method provided by the invention, a way of rare-earth metal ion Er and Al donor doping is adopted, a ceramic target is utilized as a base and the ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism is prepared by adopting an ICP-PVD (inductively coupled plasma-physical vapor deposition) technique. By adopting the ICP-PVD technique in the invention, the metal ion Er can be evenly doped into the ZnO crystal lattice; and meanwhile, the carrier concentration of the ZnO film doped with Al can be obviously improved, thus the ferromagnetic transformation among Er<2+> ions can be effectively adjusted and all films have intrinsic ferromagnetism and anomalous Hall effect above room temperature. Therefore, the semiconductor film provided by the invention can be widely applied to spinning electron devices.
Owner:江苏先进无机材料研究院
P type doping ZnO based rare magnetic semiconductor material and method of producing the same
ActiveCN101183595AEasy to getSimple technologyZinc oxides/hydroxidesGalvano-magnetic material selectionSodium acetateZinc Acetate Dihydrate
The invention discloses a p-type doped ZnO-based diluted magnetic semiconductor material and the preparation method. The material molecular structure formula is ZnTMyxO, in which Tm represents transition metal element, Co, Ni, Mn and other elements, x=0-10%, y=0-20%. Method is that zinc acetate, sodium acetate and transition metal salt are dissolved in ethylene glycol monomethyl ether as precursor; then ethanol is added as stabilizer; after stirring, the stable sol is formed. After the sol being dried and heat treated, the power sample is obtained; or by spin coating, the sol is coated uniformly on the Si wafer cleaned in advance or other substrates (quartz glass, sapphire, SiC and other materials), after being dried and heat treated, the thin film sample is obtained. The sol-gel method of preparing material has the advantage of simple technology, low cost, and obtaining easily large area thin films; based on the preparation of the room-temperature ferromagnetic ZnO-based diluted magnetic semiconductor, the Na ion is introduced successfully to obtain the p-type doping; therefore the magnetic property is improved, and by regulating concentration of the Na ion, the magnetic property is controlled.
Owner:ZHEJIANG UNIV +1
Method for preparing Cd1-xCoxS dilute magnetic semiconductor nanoparticles by gas-liquid surface reaction
InactiveCN101941738AHigh saturation magnetizationUniform particle sizeCobalt compoundsSurface reactionNanoparticle
Owner:JILIN UNIV
Method for preparing zinc oxide base magnetic semiconductor material using sub-nanometer composite method
InactiveCN1523641AImprove performanceGood repeatabilitySemiconductor/solid-state device manufacturingInorganic material magnetismAlloyFilm material
This invention relates to a sub-nm compound method for preparing ZnO base magnetic semiconductor film materials by magnetic control sputtering, molecular beam epitaxial, laser pulse deposition or laser molecular beam epitaxial method to alternately deposit the sub-nm transition metal and ZnO high-gap semiconductor layer on the substrate and compound then at atom size to form a magnetic semiconductor, the transition metal is from Co, Fe, Ni or Mn or their alloy. Compared with other methods, this invented material is grown under low temperature and non-balanced condition, the dope to the transition metal is not limited by solid solubility.
Owner:SHANDONG UNIV
Diluted magnetic ZnO-base semiconductor prepared by sol-gel method
InactiveCN1383161AEasy to getSimple technologySemiconductor/solid-state device manufacturingInorganic material magnetismConcentration ratioNitrogen gas
This invention relates to a method for preparing ZnO base dilution magnetic semiconductors with Sol-Gel method by applying Sol-Gel method combined with doped ferromagnetic ions as Fe. Co or Mn. Ni etc. to prepare ZnO base dilution magnetic semiconductor films. It is first to prepare ZnO Gel solution by dissolving a proportion of analytically pure zinc acetate and metal salt (the atomic concentration ratio of Fe and Zinc is 1-1.5%) in asolute alcohol, mixed evenly to get ZnO colloidal solution finally which is informly coated on the rotating Si chips. The film is kept for a period of time under room temperature-100 deg.C after a few minutes of heat treatment, then to go through heat treatment for 0.5-1.5 hours under nitrogen atmosphere at 500-900 deg.C.
Owner:NANJING UNIV
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