31 results about "Magnetic semiconductor" patented technology

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

1. The name of the design product: heat sink (magnetic semiconductor 4-hole-shaped rotary cap type). 2. The use of the design product: heat dissipation product for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

1. The name of the design product: magnetic semiconductor heat sink (oblong lamp effect). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention belongs to the technical field of magnetic materials, and discloses a room-temperature molecular magnet and a preparation method and application thereof, the room-temperature molecular magnet is an organic eutectic, an acceptor in the organic eutectic is fullerene, and a donor in the organic eutectic is H2TPP, MgTPP, MnTPP, FeTPP, CoTPP, NiTPP, CuTPP or ZnTPP. The preparation method of the organic eutectic is simple, and the organic eutectic has good ferromagnetism at 300K, shows room-temperature magnetism and has good application prospects in magnetic semiconductors.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

1. Name of the design product: magnetic semiconductor heat sink (center with screen). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

1. The name of the design product: heat sink (magnetic semiconductor round type 3 cone). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The application belongs to the technical field of life science, and relates to a multifunctional composite biological probe and a preparation method and application thereof.The multifunctional composite biological probe comprises one or more than one of a noble metal SERS biological probe and one or more than one of a magnetic semiconductor SERS biological probe.The application realizes the functional superposition of the noble metal SERS biological probe and the magnetic semiconductor SERS biological probe in the simplest and most effective way, improves the sensitivity and accuracy of the detection method, and endows the detection method with the magnetic enrichment characteristic.

This application proposes a strong ferromagnetic ceramic thin film based on iron-tin co-doped amorphous gallium oxide, belonging to the technical field of magnetic semiconductor ceramic materials. The invention involves thoroughly mixing Ga, Fe, and Sn organic precursor solutions in a specific ratio to form a GaFeSn organic precursor solution; spin-coating the GaFeSn organic precursor solution onto a cleaned single-crystal alumina substrate; then placing the resulting GaFeSn organic precursor film into a single-temperature tube furnace; under an air atmosphere, slowly raising the furnace temperature to 550°C at a rate of 5°C / min, and annealing at 550°C for 1 hour to prepare a uniformly thick amorphous GaFeSnO magnetic ceramic thin film with strong ferromagnetism. This invention excites strong ferromagnetism in the film with a relatively low iron doping concentration (10%), solving the problem of low conductivity caused by transition metal doping in magnetic ceramic thin films. The amorphous GaFeSnO magnetic ceramic thin film prepared by this invention exhibits a conductivity of 170 emu / cm² at 2K. 3 90 emu / cm at 300K 3 It has strong ferromagnetism and a Curie temperature as high as 335K.

The application provides a transition metal atom and C vacancy co-doped 3C-SiC composite model and a modification method, which mainly comprises the following contents: constructing a 3C-SiC supercell; performing geometric optimization on the 3C-SiC supercell to obtain a 3C-SiC supercell with the lowest total internal energy of atoms; performing transition metal atom doping to obtain a transition metal atom doped 3C-SiC supercell; obtaining an optimized transition metal atom doped 3C-SiC supercell; removing any C atom nearest neighbor to the transition metal atom in the optimized transition metal atom doped 3C-SiC supercell to form a C vacancy, thereby obtaining a C vacancy and transition metal atom co-doped 3C-SiC composite model, and then performing geometric optimization on the obtained C vacancy and transition metal atom co-doped 3C-SiC composite model to obtain an optimized C vacancy and transition metal atom co-doped 3C-SiC composite model; compared with a traditional 3C-SiC-based diluted magnetic semiconductor, the magnetic moment of the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy is obviously improved, the spin polarization of surrounding atoms is strengthened, and the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy can be used for spin electronic devices.

The application provides a kind of iron-doped gallium oxide-based strong ferromagnetic ceramic film material and a preparation method thereof, and relates to the technical field of magnetic semiconductor ceramic materials.The Ga organic precursor solution and the Fe organic precursor solution are prepared first;Then the Ga and Fe organic precursor solutions are mixed in a certain proportion to form a GaFe organic precursor solution;The GaFe organic precursor solution is spin-coated on a cleaned single-crystal alumina substrate;The obtained GaFe film is placed in a single-temperature zone tube furnace;In an air atmosphere, the temperature of the tube furnace is first increased to 550 DEG C at a slow rate of 2 DEG C / min, and then annealed for 1 h, and then increased to greater than or equal to 750 DEG C at the same heating rate for annealing treatment, and then annealed for 1 h, thereby preparing a GaFeO magnetic ceramic film with a very uniform surface and strong ferromagnetism.The preparation method of the application has low environmental requirements, and the GaFeO magnetic ceramic film prepared by the application has good crystallinity and crystalline orientation, excellent strong ferromagnetism, and a Curie temperature higher than 352 K.

A detection element according to an embodiment of the present disclosure comprises: a detection unit that includes one or both of a polar metal and a polar semiconductor, and has a break in spatial inversion symmetry due to magnetic ordering; and an output unit that outputs, as a detection signal, fluctuations in a physical quantity being detected, which are fluctuations in a physical quantity in a direction orthogonal to a direction in which spatial inversion symmetry in the detection unit is broken.

The application provides a Mn-doped GeSe-based magnetic semiconductor thin film-based memristor and a preparation method, relates to the technical field of memristors, and comprises, from bottom to top, a substrate layer, a resistance change medium layer and a top electrode layer, wherein the resistance change medium layer is a Mn-doped GeSe-based magnetic semiconductor thin film, and the thickness of the Mn-doped GeSe-based magnetic semiconductor thin film is 100 nm to 700 nm. The memristor of the application takes the Mn-doped GeSe-based thin film with strong ferromagnetism as the resistance change medium layer material, introduces the magnetism of the material into the resistance change process of the device, so that the memristor exhibits typical resistance transition characteristics and biological synapse characteristics, and the memristor of the application exhibits magnetic field-adjustable resistance transition characteristics and biological synapse plasticity, and shows great application potential in multifunctional nonvolatile memristor devices and neuromorphic electronic devices.

To provide a detection element and detection module that can detect fluctuations in physical quantities with a relatively simple configuration. [Solution] The detection element comprises a detection unit that includes one or both of a magnetic metal and a magnetic semiconductor and has a breaking of spatial inversion symmetry due to magnetic order, and an output unit that outputs a fluctuation of a physical quantity in a direction orthogonal to the direction of the breaking of spatial inversion symmetry in the detection unit, which is the fluctuation of the physical quantity to be detected, as a detection signal.

The application belongs to the technical field of semiconductor thin film materials, and particularly relates to a diluted magnetic semiconductor thin film for In-based semiconductor materials. 2‑x M x O3, the doping element is a non-magnetic transition metal M, which is one or more of Fe, Mn, Co or Ni, and 0 < x < 0.1. The application adopts a laser pulse deposition technology (PLD) based on a ceramic target material to prepare an InO-based diluted magnetic semiconductor thin film with room-temperature ferromagnetism by means of a transition metal ion as a donor doping mode. The PLD technology of the application can incorporate a high proportion of transition metal ions into the InO lattice, and a large number of lattice defects can be introduced by controlling the deposition conditions, so that a ferromagnetic thin film material higher than room temperature is induced, which can be applied to spin electronic devices.

The application provides a method for preparing a magnetic semiconductor thin film, which comprises the following steps: (1) placing a polycrystalline magnetic semiconductor target into a thin film deposition chamber; (2) placing K single element and Mn single element as beam source materials into two beam source furnaces respectively; (3) cleaning a substrate, and then mounting the cleaned substrate on a substrate table; (4) then, heating the substrate table and the substrate; (5) controlling the air pressure of the thin film deposition chamber to be 6-100 Pa by means of a non-reactive gas, and then using a molecular beam assisted pulsed laser deposition method to epitaxially grow a thin film on the substrate; and (6) after the thin film is grown, adjusting the air pressure of the thin film deposition chamber and cooling the substrate, so as to obtain a magnetic semiconductor thin film (Ba 1‑x K x )(Zn 1‑y Mn y )2As2, wherein 0.08

The application discloses an electrically controlled magnetic device based on Ga-based ultraroom-temperature van der Waals ferromagnetic material and belongs to the technical field of magnetic devices. The Ga-based ultraroom-temperature van der Waals ferromagnetic material, the non-magnetic semiconductor, the Ga-based ultraroom-temperature van der Waals ferromagnetic material and the non-magnetic gate dielectric are sequentially arranged from bottom to top; four electrodes are further included; the first electrode and the second electrode are in contact with the upper Ga-based ultraroom-temperature van der Waals ferromagnetic material respectively; the third electrode is in contact with the lower Ga-based ultraroom-temperature van der Waals ferromagnetic material; and the fourth electrode is in contact with the non-magnetic gate dielectric. The Ga-based ultraroom-temperature van der Waals ferromagnetic material used in the application can realize effective switching of high and low configurations below the Curie temperature (400-800K), and the critical current density is as low as 4A / cm 2 The room-temperature tunneling magnetoresistance of the device can be effectively adjusted by a gate voltage (-20V-20V) or a gate current (-100muA-100muA), and the adjustment range is 30%-300%.

1. Name of the product in this design: Circular magnetic semiconductor heat sink (6-pointed star). 2. Purpose of this design: A heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

1. The name of the design product: round magnetic semiconductor heat sink (V-shaped triangular). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention relates to the technical field of electronic devices, in particular to a memristor and a preparation method thereof.The memristor comprises a lower electrode, a resistive random dielectric layer and an upper electrode which are sequentially arranged in a stacked mode, each of the lower electrode and the upper electrode comprises a single-layer or multi-layer metal film, and the resistive random dielectric layer is a Fe-doped TiO2-based magnetic semiconductor film; the concentration of Fe atoms in the Fe-doped TiO2-based magnetic semiconductor thin film is 0.5 to 5 at%. According to the memristor, the Fe-doped TiO2-based thin film with high ferro-magnetism serves as the resistance change medium layer, the magnetic characteristic and the resistance change process are coupled, the memristor has the typical resistance conversion characteristic, the resistance conversion behavior with the adjustable magnetic field can be achieved, the memristor has the high stability, low power consumption and the multi-field regulation and control capacity, the preparation method is simple and easy to implement, and the application range is wide. Moreover, the method is highly compatible with a CMOS technology, and can effectively meet the demands of miniature manufacturing and device integration.

1. The name of the design product: heat sink (magnetic semiconductor astronaut spin cap type). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

1. Name of the design product: magnetic semiconductor heat sink (circle center horizontal clause). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo that best indicates the design points: perspective view 1.

The application relates to the field of spin electronics materials, in particular to a magnetic semiconductor material and a preparation method thereof. 1‑y C y X3, wherein y=0-0.1, A is one of Ca, Sr and Ba, B is one of Ti, Zr and Hf, X is S or Se, and C is one of Mn, Fe and Co; since the chalcogenide perovskite has a similar chemical formula and structure to the oxide perovskite, when the oxygen ions in the oxide perovskite are replaced by chalcogen (S, Se) ions, the structure of the chalcogenide perovskite will be distorted, thereby causing significant changes in the electronic structure, and accordingly the band gap width and photoelectric properties will also change. The 3d transition metal C (Mn, Fe, Co) with a local magnetic moment is used to replace the B-site cations, and the material can exhibit long-range magnetic order. Therefore, the chalcogenide magnetic semiconductor material designed and prepared by the application greatly enriches the selectivity of the magnetic semiconductor material, thereby providing the possibility for designing new high-curie-point spin electronics materials and devices.

The invention provides an efficient treatment process for dyeing and finishing wastewater in lining cloth production, and relates to the technical field of lining cloth production.The efficient treatment process comprises the following steps that a photocatalytic composite material with two-dimensional g-C3N4 as a substrate is prepared, a magnetic semiconductor oxide is loaded through a liquid phase controllable method, and a Z-type heterojunction is constructed; the composite material is used for simulating the photocatalytic degradation treatment on the lining cloth dyeing and finishing wastewater under the irradiation of sunlight, and the interaction mechanism of a catalyst and dye molecules is simulated; a response surface method RSM and a genetic algorithm GA are combined to carry out multi-parameter cooperative adjustment on the catalyst ratio and reaction conditions; by constructing the magnetic Z-type heterojunction photocatalytic composite material, the visible light response capability and the carrier separation efficiency are improved, the efficient degradation of complex dye molecules in the lining cloth dyeing and finishing wastewater is realized, meanwhile, the salt mist resistance and the poisoning resistance of the catalyst are enhanced, and the long-term stability in a complex water quality environment is ensured.

1. Name of the product in this design: Heat sink (magnetic semiconductor one-line screw cap type). 2. Purpose of this design: A heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

1. Name of the design product: magnetic semiconductor heat sink (circular light effect). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

The application discloses a kind of dilute magnetic semiconductor thin film material epitaxial structure and preparation method, epitaxial structure includes by lower to upper sequentially arranged: p-GaAs substrate, p-ZnTe thin film layer, ZnTe stop layer, (Zn, Cr)Te magnetic layer, AlN insulating layer, Au voltage extraction layer, the doping element of the p-ZnTe thin film layer is N atom.The ZnTe stop layer is grown on p-ZnTe thin film layer and (Zn, Cr)Te magnetic layer, can prevent N atom in p-ZnTe thin film layer diffusion to (Zn, Cr)Te magnetic layer, to change the magnetism characteristic of containing (Zn, Cr)Te magnetic layer, and further improve the effective operating temperature of device.

The invention relates to a strain-induced ferromagnetic Mn-doped MoS2 film material and a preparation method thereof, and belongs to the technical field of two-dimensional magnetic semiconductor materials, the technical key points are as follows: the chemical formula of the material is Mo (1-x) MnxS2, and stable biaxial tensile strain is formed by depositing a MoSe2 buffer layer on a Si (100) substrate and introducing lattice mismatch with the Mo (1-x) MnxS2; the ferromagnetic coupling effect between Mn atoms can be enhanced through strain regulation and control, and room-temperature intrinsic ferromagnetism is achieved; moSe2 and Mo (1-x) MnxS2 films are sequentially deposited in a magnetron co-sputtering mode, and a crystal structure and magnetic response performance are optimized through high vacuum annealing; the thickness of the obtained film is 15-25 nm, the saturation magnetization reaches 0.011 emu / g, and the Curie temperature is higher than 315 K. The method is stable in preparation process and adjustable in parameter, and the obtained material is suitable for the fields of spintronics, magnetic sensors and the like.

1. The name of the design product: magnetic semiconductor heat sink (simple square light effect). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.