55 results about "Magnetic semiconductor" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The invention relates to the technical field of magnetic semiconductor manufacturing, and discloses a plane temperature control method based on an anomalous Hausen effect, and the method comprises the steps: applying a first magnetic field to the plane of a magnetic semiconductor workpiece at a first temperature, and carrying out the saturation magnetization; applying a second magnetic field to enable the magnetic semiconductor workpiece after saturation magnetization to be in target coercive field intensity; heating at least one target area of the plane of the magnetic semiconductor workpiece; stopping heating and removing the second magnetic field until the magnetic moment of the target area in the plane of the magnetic semiconductor workpiece is reverse; applying a third magnetic field to the plane of the magnetic semiconductor workpiece for reverse saturation magnetization; and excitation current perpendicular to the direction of the first magnetic field is applied to the magnetic semiconductor workpiece, so that partition temperature control of refrigeration of the plane of the magnetic semiconductor workpiece within the target area range and heating outside the target area range is achieved.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

1. The name of the design product: heat sink (magnetic semiconductor 4-hole-shaped rotary cap type). 2. The use of the design product: heat dissipation product for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

1. The name of the design product: magnetic semiconductor heat sink (oblong lamp effect). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention belongs to the technical field of magnetic materials, and discloses a room-temperature molecular magnet and a preparation method and application thereof, the room-temperature molecular magnet is an organic eutectic, an acceptor in the organic eutectic is fullerene, and a donor in the organic eutectic is H2TPP, MgTPP, MnTPP, FeTPP, CoTPP, NiTPP, CuTPP or ZnTPP. The preparation method of the organic eutectic is simple, and the organic eutectic has good ferromagnetism at 300K, shows room-temperature magnetism and has good application prospects in magnetic semiconductors.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

1. Name of the design product: magnetic semiconductor heat sink (center with screen). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

The invention discloses a method for preparing a doped semiconductor film by combining magnetic control and ion beam, which belongs to the technical field of semiconductor film preparation, and comprises the following steps: firstly, preparing a doped source Cu film by using an ion beam deposition system, and after the Cu film is prepared, purging the surface of the Cu film by using N2 in the system to achieve the passivation effect of the Cu film; the method comprises the following steps: preparing a diluted magnetic semiconductor AIN thin film, forming effective combination with an ALN thin film, transferring a sample into a magnetic control chamber, and preparing a diluted magnetic semiconductor layer AlN thin film. And after the doped film layer is prepared, the whole film is subjected to nitrogen atmosphere heat treatment at the temperature of 300-500 DEG C, and finally the Cu-doped AlN diluted magnetic semiconductor film is prepared. The method is simple and controllable, the film layer quality is high, and the obtained film can meet the use requirements of spinning electron components.

The present disclosure provides a multifunctional composite bioprobe and a preparation method and use thereof. The multifunctional composite bioprobe includes one or more of noble metal SERS bioprobes and one or more of magnetic semiconductor SERS bioprobes. According to the present disclosure, the functional superposition of the noble metal SERS bioprobe and the magnetic semiconductor SERS bioprobe is realized through the simplest and most effective way, which improves the sensitivity and accuracy of the detection method, and endows magnetic enrichment characteristics for the detection method.

The present invention relates to the field of magnetic perovskite materials. Sulfide perovskites have advantages such as high stability and good carrier transport characteristics. By appropriate doping or alloying with magnetic ions, they can become dilute magnetic semiconductors, showing both semiconductor and magnetic characteristics. However, doping and alloying are prone to problems such as phase separation. To solve the above problems, the present invention discloses a sulfide perovskite material with antiferromagnetic properties and its preparation method, including the following steps: weighing raw materials HfS2 and EuS in a molar ratio of 1:1; grinding, mixing, and pressing the above raw materials into flakes; carrying out a solid-state reaction on the above flake mixture in a CS2 protection atmosphere at 1300 °C for 6 hours to obtain a single pure-phase EuHfS3 sulfide perovskite material. This material exhibits good crystallinity, unique antiferromagnetic characteristics, and high conductivity, and can be widely applied in magnetic storage and spintronic devices.

1. The name of this design product: Magnetic semiconductor heat sink (ultra-thin round type). 2. Purpose of this design product: a heat dissipation product used to cool down mobile phones. 3. The key design feature of this product is its shape. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 1.

1. Name of this design product: Magnetic Semiconductor Radiator (Liquid Cooling SY‑10). 2. Purpose of this product design: This product design is used for heat dissipation. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture. 5. Other situations that require explanation Other explanations: The length of the omitted part of this design product is indefinite.

1. The name of the design product: heat sink (magnetic semiconductor round type 3 cone). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The application belongs to the technical field of life science, and relates to a multifunctional composite biological probe and a preparation method and application thereof.The multifunctional composite biological probe comprises one or more than one of a noble metal SERS biological probe and one or more than one of a magnetic semiconductor SERS biological probe.The application realizes the functional superposition of the noble metal SERS biological probe and the magnetic semiconductor SERS biological probe in the simplest and most effective way, improves the sensitivity and accuracy of the detection method, and endows the detection method with the magnetic enrichment characteristic.

1. The name of this design product: Magnetic semiconductor radiator (rotor TL23). 2. Purpose of this product: a heat dissipation product for cooling mobile phones. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

This application proposes a strong ferromagnetic ceramic thin film based on iron-tin co-doped amorphous gallium oxide, belonging to the technical field of magnetic semiconductor ceramic materials. The invention involves thoroughly mixing Ga, Fe, and Sn organic precursor solutions in a specific ratio to form a GaFeSn organic precursor solution; spin-coating the GaFeSn organic precursor solution onto a cleaned single-crystal alumina substrate; then placing the resulting GaFeSn organic precursor film into a single-temperature tube furnace; under an air atmosphere, slowly raising the furnace temperature to 550°C at a rate of 5°C / min, and annealing at 550°C for 1 hour to prepare a uniformly thick amorphous GaFeSnO magnetic ceramic thin film with strong ferromagnetism. This invention excites strong ferromagnetism in the film with a relatively low iron doping concentration (10%), solving the problem of low conductivity caused by transition metal doping in magnetic ceramic thin films. The amorphous GaFeSnO magnetic ceramic thin film prepared by this invention exhibits a conductivity of 170 emu / cm² at 2K. 3 90 emu / cm at 300K 3 It has strong ferromagnetism and a Curie temperature as high as 335K.

1. Name of the Design Product: Magnetic Semiconductor Radiator (TL08). 2. Use of the Design Product: A heat dissipation product for cooling mobile phones. 3. Design Key Points of the Design Product: Lies in the shape. 4. Picture or Photograph Most Indicating the Design Key Points: Perspective view.

The invention provides a memristor based on a Mn-doped GeSe-based magnetic semiconductor thin film and a preparation method, and relates to the technical field of memristors, the memristor comprises a substrate layer, a resistive random dielectric layer and a top electrode layer which are sequentially arranged from bottom to top, the resistive random dielectric layer is the Mn-doped GeSe-based magnetic semiconductor thin film, and the top electrode layer is arranged between the substrate layer and the resistive random dielectric layer. The thickness of the Mn-doped GeSe-based magnetic semiconductor thin film ranges from 100 nm to 700 nm. According to the memristor disclosed by the invention, the Mn-doped GeSe-based thin film with relatively strong ferromagnetism is used as a resistive change dielectric layer material, and the magnetism of the material is introduced into a resistance change process of a device, so that the memristor shows typical resistance conversion characteristics and biological synapse characteristics; and the memristor disclosed by the invention shows a resistance transformation characteristic with an adjustable magnetic field and biological synaptic plasticity, and shows huge application potential in multifunctional nonvolatile memristor devices and neuromorphic electronic devices.

The application provides a transition metal atom and C vacancy co-doped 3C-SiC composite model and a modification method, which mainly comprises the following contents: constructing a 3C-SiC supercell; performing geometric optimization on the 3C-SiC supercell to obtain a 3C-SiC supercell with the lowest total internal energy of atoms; performing transition metal atom doping to obtain a transition metal atom doped 3C-SiC supercell; obtaining an optimized transition metal atom doped 3C-SiC supercell; removing any C atom nearest neighbor to the transition metal atom in the optimized transition metal atom doped 3C-SiC supercell to form a C vacancy, thereby obtaining a C vacancy and transition metal atom co-doped 3C-SiC composite model, and then performing geometric optimization on the obtained C vacancy and transition metal atom co-doped 3C-SiC composite model to obtain an optimized C vacancy and transition metal atom co-doped 3C-SiC composite model; compared with a traditional 3C-SiC-based diluted magnetic semiconductor, the magnetic moment of the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy is obviously improved, the spin polarization of surrounding atoms is strengthened, and the 3C-SiC-based diluted magnetic semiconductor doped with a vacancy can be used for spin electronic devices.

The present invention relates to the field of rare earth magnetic semiconductor films, and in particular to a nitrogen-containing rare earth magnetic semiconductor (Zn 90％ ,Cr 10％ ) Preparation method of Te:I thin film material. The content of Cr atoms in the thin film material is 10%. By doping iodine and nitrogen elements, the carrier concentration can reach 10 19 cm ‑3 In addition, the binding energy between Cr atoms is increased after N doping, so that the Cr atoms are evenly distributed in the film due to repulsion. In addition, the probability of metastable decomposition of Cr in the film can be further reduced by low-temperature annealing. The nitrogen-diluted magnetic semiconductor (Zn 90％ ,Cr 10％ )Te:I thin film has both ferromagnetic and semiconductor properties, and the Curie transition temperature of ferromagnetism can reach 300K at room temperature.

The application provides a kind of iron-doped gallium oxide-based strong ferromagnetic ceramic film material and a preparation method thereof, and relates to the technical field of magnetic semiconductor ceramic materials.The Ga organic precursor solution and the Fe organic precursor solution are prepared first;Then the Ga and Fe organic precursor solutions are mixed in a certain proportion to form a GaFe organic precursor solution;The GaFe organic precursor solution is spin-coated on a cleaned single-crystal alumina substrate;The obtained GaFe film is placed in a single-temperature zone tube furnace;In an air atmosphere, the temperature of the tube furnace is first increased to 550 DEG C at a slow rate of 2 DEG C / min, and then annealed for 1 h, and then increased to greater than or equal to 750 DEG C at the same heating rate for annealing treatment, and then annealed for 1 h, thereby preparing a GaFeO magnetic ceramic film with a very uniform surface and strong ferromagnetism.The preparation method of the application has low environmental requirements, and the GaFeO magnetic ceramic film prepared by the application has good crystallinity and crystalline orientation, excellent strong ferromagnetism, and a Curie temperature higher than 352 K.

1. The name of this design product: Magnetic semiconductor radiator (round). 2. Purpose of this design product: a heat dissipation product used to cool down mobile phones. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

A detection element according to an embodiment of the present disclosure comprises: a detection unit that includes one or both of a polar metal and a polar semiconductor, and has a break in spatial inversion symmetry due to magnetic ordering; and an output unit that outputs, as a detection signal, fluctuations in a physical quantity being detected, which are fluctuations in a physical quantity in a direction orthogonal to a direction in which spatial inversion symmetry in the detection unit is broken.

1. Name of the design product: magnetic semiconductor heat sink (square). 2. Use of the design product: heat dissipation product for cooling mobile phones. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view 1.

The invention discloses a diluted magnetic semiconductor with a Cr-doped CdS nanostructure and a preparation method of the diluted magnetic semiconductor. The diluted magnetic semiconductor is composed of three elements of Cr, Cd and S, and the chemical general formula of the diluted magnetic semiconductor is Cd1-xCrxS. According to the diluted magnetic semiconductor, cadmium oxide, powdered sulfur and chromium chloride hexahydrate are used as raw materials, ethanolamine and ethylenediamine are used as organic solvents, and the diluted magnetic semiconductor with the Cr-doped CdS nano structure is synthesized through a solvothermal method. The nanoparticles are small in particle size, can generate strong ferromagnetic properties, are excellent in saturation magnetization, and can be widely applied to electronic components, semiconductor chips and integrated circuits.

1. The name of the design product: magnetic semiconductor heat sink (with mobile power supply). 2. The use of the design product: heat dissipation products for cooling mobile phones. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention relates to the technical field of nano materials, and particularly discloses a method for heteroepitaxy of a large-area single-layer chromium triiodide magnetic semiconductor film on a Van der Waals substrate HOPG, which comprises the following steps: taking an A-level HOPG (0001) surface as a substrate, carrying out mechanical cleavage on the A-level HOPG (0001) surface, detecting the surface quality after cleavage by a scanning tunneling microscope, and carrying out ultrahigh vacuum annealing and degassing. Testing a scanning tunneling microscope morphology graph in a constant current mode before and after growth; and epitaxially growing a single-layer CrI3 film in a room-temperature high-iodine atmosphere in a cavity with background vacuum superior to 3 * 10 <-10 > mbar. Through the molecular beam epitaxy technology, the obtained CrI3 sample has high crystal quality and low surface roughness and has great application prospects in the fields of two-dimensional spin electronic devices, light-operated magnetic devices, quantum topological elements and the like, and the method is high in repeatability and has certain economic value.

The utility model provides a magnetic attraction semiconductor refrigeration assembly which comprises a semiconductor refrigeration sheet, the semiconductor refrigeration sheet comprises a refrigeration surface and a heating surface, the semiconductor refrigeration sheet is provided with a concave cavity extending from one side of the refrigeration surface to one side of the heating surface, and a cavity bottom refrigeration surface and a cavity top refrigeration surface with height difference are formed. According to the structure and the structural characteristics of the semiconductor chilling plate, the semiconductor chilling plate forms the cavity bottom refrigeration surface and the cavity top refrigeration surface with height difference, so that the concave cavity can be used for accommodating the charging coil, the magnet and the like, and the cooling capacity generated by the cavity bottom refrigeration surface can cool the charging coil, the magnet and the like, so that the charging coil is kept at a relatively low temperature; the cooling capacity generated by the cavity top refrigeration surface can directly act on the mobile terminal, and conduction through a charging coil and a magnet is not needed, so that the refrigeration effect is greatly improved.