The invention discloses a p type doped CuCro2-based dilute
magnetic semiconductor material and a manufacturing method thereof. The CuCro2-based dilute
magnetic semiconductor polycrystal block is manufactured, and has a molecular
structural formula of CuCr(1-x)TMxO2, wherein, TM is
transition metal elements which are Fe, Co, Ni, Mn, and the concentration thereof x is more than or equal to 0 and is less than or equal to 0.2. Cupric acetate,
chromic nitrate and
transition metal salt are measured according to a
mole ratio of cupric, chromic to
transition metal of 1: (0.80-1): (0-0.20), the
powder is added into
distilled water and added with adequate amount of
citric acid, and then stirred at
room temperature till fully dissolved, thereby obtaining a well
mixed solution; then, after processes of parching,
grinding, tablet compressing and heat treatment, dilute
magnetic semiconductor block material of CuCr(1-x)TMxO2 is manufactured. The invention adopts a
sol-gal method and has the advantages of low
energy consumption, simple technique and the like. In the invention, all of the components in the solution are well mixed, and the uniformity degree can reach
molecular level, so that multi-component homogenous
dopant can be manufactured was well as products that are hard to be obtained by traditional
solid phase methods. And experiment results have
repeatability.