115results about How to "Chemical composition is easy to control" patented technology

This invention belongs to battery field, which relates to ultra-micro compound lithium iron phosphate cathode material with high density and its fabrication method. Said cathode material is prepared by mixing iron salt, lithium salt and phosphates at a P/Li/Fe ratio of 1-1.1:1-1.1:1-1.1, adding conductive additives containing dopant element and carbon-bearing organic compound, adding organic acid as carrier, adjusting pH, controlling solution temperature in reactor to form sol, separating the sol to obtain nano-precursor and placing it into micorwave oven under protection of inert gas, and obtaining the final product. It is easy to control the chemical component, phase composition and particle size distribution. The conductive additive can be well-distributed. The method also has the advantages of short reaction time, low energy consumption during synthesis process and low cost. The obtained composite has high purity and good compatibility with electrolyte, excellent conductive property and charge and discharge property with large current, and good structure stability,thermal stability and cycle performance.

The invention relates to a Gd2O3-rich borogermanate scintillation glass, and a preparation method and application thereof. The invention provides a Gd2O3-rich borogermanate scintillation glass which is characterized by comprising the following components in percentage by mol: 20-60 mol% of B2O3, 20-60 mol% of GeO2, 15-40 mol% of Gd2O3 and 0.01-10 mol% of compound containing rare earth or transition metal ions. The rare earth ions comprise Y<3+>, La<3+>, Ce<3+>, Pr<3+>, Nd<3+>, Pm<3+>, Sm<3+>, Eu<3+> (Eu<2+>), Gd<3+>, Tb<3+>, Dy<3+>, Ho<3+>, Er<3+>, Tm<3+>, Yb<3+> and Lu<3+>; and the transition metal ions comprise Mn<2+> (Mn<4+>), Sn<2+>, Zn<2+>, Bi<3+>, Cr<3+>, Ti<4+> and Zr<4+>. The invention also provides a method for preparing the Gd2O3-rich borogermanate scintillation glass, and application of the Gd2O3-rich borogermanate scintillation glass.

The invention discloses a method for preparing a Tb-doped BiFeO3 ferroelectric film on the surface of a conductive glass substrate. The method comprises the following steps of: 1, cleaning the substrate; 2, irradiating the substrate by using ultraviolet so that the surface of the substrate reaches atomic cleanliness; 3, dissolving Fe(NO3)3.9H2O, Bi(NO3)3.5H2O and Tb(NO3)3.5H2O in a molar ratio of 1: (1-x): x (x=0-0.15) into a mixed solution of ethylene glycol monomethyl ether and glacial acetic acid; and 4, preparing the film by adopting a spin coating method, then pre-annealing, annealing, crystallizing, and thus obtaining the crystalline Tb-doped BiFeO3 ferroelectric film. By the method, the residual polarization value of the film can be greatly improved; and after Tb is doped, the residual polarization value can be improved to 55mu C/cm<2>.

The invention relates to a preparing method for a SiC particle reinforced foam aluminum based composite, which comprises the following procedures: taking by mass among the total alloy amount 1-3% Mg, 6-8% Si and remainder Al, heating 10-20% SiC particles to melt into molten aluminum alloy, carrying out electromagnetic agitating evenly; adding 1-3% foaming agent by mass, after agitating evenly the foaming agent, keeping temperature and foaming 3-5 minutes; cooling after the molten aluminum grows steadily so as to cool and solidify the molten aluminum alloy foam, then getting SiC particle reinforced foam aluminum based composite with even hole structure and high porosity. The method adds molten aluminum alloy SiCp, which on one hand increases the viscosity of the molten alloy so as to prevent the bubbles dissolved from the foaming agent from floating upward and prolong the lives of the bubbles, on another hand, SiCp can also improve the strength of the foam aluminum. These bubbles take SiCp as a core and grow, then are cooled concurrently in all directions, this can overcome any shortcoming in solidifying and get foam aluminum of high porosity and even hole structure. By using electromagnetic agitating, the burning loss in the agitating blade can be avoided, this is useful for controlling the chemical components of the alloy.

The invention provides a method for preparing an Nd/Co-codoped BiFeO3 film on an FTO (fluorine-doped tin oxide)/glass substrate surface, which comprises the following steps: after cleaning an FTO substrate, carrying out ultraviolet irradiation, and dissolving bismuth nitrate (8% excessive), ferric nitrate, neodymium nitrate and cobalt nitrate which serve as raw materials in mixed ethylene glycol monomethyl ether and acetic anhydride in a mol ratio of 0.98:(1-x):0.1:x (x=0.01-0.05), thereby obtaining a stable BiFeO3 precursor solution of which the metallic ion concentration is 0.1-0.5mol/L; and after spin coating, drying to obtain a dry film, preannealing, naturally cooling, repeating the process above to obtain the film with expected thickness, and finally, annealing to obtain the crystalline BiFeO3 film. In the invention, the facility requests are simple, the experiment conditions can be easily achieved, the prepared film has good uniformity, the doping amount is easy to control, andthe dielectric properties of the film can be greatly enhanced by doping.

The invention discloses a method for preparing a Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via a sol-gel process. The method is carried out by the following steps of: washing an FTO (Fluorinedoped Tin Oxide) substrate and subsequently irradiating via ultraviolet light; using bismuth nitrate, ferric nitrate, samarium nitrate and chromic nitrate as raw materials (the bismuth nitrate excesses by 5%), dissolving the above raw materials in mixed ethylene glycol monomethyl ether and acetic anhydride according to a mole ratio of 0.90: (1-x):0.15:x (x is 0.00, 0.01, 0.02 or 0.03), then adding ethanol amine to adjust a viscosity and obtain a stable BiFeO3 (bismuth ferrite) precursor solution with a metal ion concentration of 0.003-0.3mol/L; and homogenizing and subsequently obtaining a dry film, then using a layer-by-layer annealing process to obtain a crystal-state Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film. The method disclosed by the invention has the advantages of simple device requirement, easy achievement of experiment condition, good uniformity of the prepared films and easy control of the doping amount, so that the ferroelectric performance of the film is greatly enhanced.

The invention relates to high-density gadolinium and tungsten borate scintillation glass and a preparation method thereof. The scintillation glass comprises a matrix Gd2O3-WO3-B2O3 and luminescence center Eu3+ ions dispersed on the matrix. The matrix comprises 20-25 mol% of Gd2O3, 40-60 mol% of WO3, 10-30 mol% of B2O2 and 0.05-5 mol% of Eu3+ ions. The radius of Gd3+ ions in the rare earth doped gadolinium and tungsten borate scintillation glass is moderate, and can be effectively subjected to solution treatment with the Eu3+ ions; Gd3+ can transfer energy to a Eu3+ luminescence center, and accordingly light emitting efficiency is improved.

The invention provides a method for preparing a BiFe1-xCrxO3 ferroelectric film by using a sol-gel method. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate and chromic nitrate according to a molar ratio of 1.05: (1-x): x into a mixed solution containing ethylene glycol monomethyl ether, acetic oxide and cholamine, and magnetically stirring to obtain a stable BiFe1-xCrxO3 precursor with the metal ion concentration of 0.003-0.3mol/L, wherein x is equal to 0.00-0.03, and the volume ratio of the ethylene glycol monomethyl ether to the acetic oxide to the cholamine is 14: 5: 1. A film is prepared by spin-coating the BiFe1-xCrxO3 precursor on an FTO (Fluorine-doped Tin Oxide)/glass substrate by using a spin-coating method, and a crystalline BiFe1-xCrxO3 film is obtained by adopting a layer-by-layer annealing process. The method disclosed by the invention has simple requirements on equipment, and experimental conditions are easy to achieve; the prepared film is better in uniformity, and the doping amount is easy to control; and the ferroelectric property of the BiFeO3 film is improved through B-bit Cr doping.

The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A/cm<2> in a 150kv/cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.

The invention relates to high-luminous-intensity terbium-activated silicate glass and a preparation method thereof. The invention belongs to the field of luminescent materials. According to the invention, B2O3 with high phonon energy is added into a terbium-activated silicate glass formula; the mixture is well mixed; and preparation is carried out through high-temperature fusing and an annealing treatment. B2O3 takes 2-20% of a total weight of the glass formula. The glass and the method are advantaged in that: with he prepared terbium-activated silicate glass, the luminous intensity of Tb<3+> is effectively improved. The luminescent glass can be used in fields such as displaying, illumination and photoelectric devices.

The invention discloses an atomic layer deposition (ALD) modified lithium-ion battery and a preparation method thereof. According to the atomic layer deposition modified lithium-ion battery disclosed by the invention, a modification layer is formed on at least one surface of a positive electrode active material and a negative electrode active material; each modification layer is formed through adopting an atomic layer deposition process; or a modification layer is formed at least one surface of a positive electrode pole piece and a negative electrode pole piece, and each modification layer is formed through adopting the atomic layer deposition process.

The invention discloses a rare-earth magnetic material and a preparation method thereof. The chemical formula of the rare-earth magnetic material is [Dy6L2(Mu3-OH2)2(Mu3-OCH3)2(piv)10(OCH3)2], L is 3-{[(2-hydroxy-3-methoxyphenyl)methylene]amino}-1,2-propylene glycol, and piv is trimethylacetic acid. The preparation method of the rare-earth magnetic material is as follows: with DyCl3 6H2O, the trimethylacetic acid and the 3-{[(2-hydroxy-3-methoxyphenyl)methylene]amino}-1,2-propylene glycol as materials and methanol and acetonitrile as solvents, the target product is prepared by solvothermal reaction after pH is regulated to be equal to 5.5 to 6.6. The magnetic properties of the rare-earth magnetic material described by the invention are as follows: ferromagnetic exchange exists between dysprosium ions in molecules, and the rare-earth magnetic material acts as paramagnetism on the whole; the method described by the invention is simple, the cost is low, the chemical constituents are easy to control, and repeatability is good.

The invention relates to ultra-high-density boron germanotelluriteb scintillation glass and a preparation method thereof. The ultra-high-density boron germanotelluriteb scintillation glass is characterized in that main components of a network former of the ultra-high-density boron germanotelluriteb scintillation glass (metered by mole percent) are 5-30 mol% of B2O3, 10-30 mol% of GeO2 and 5-20 mol% of TeO2, and the rest of 20-60 mol% of glass component consists of rare earth oxide or rare earth fluoride. Rare earth ions comprise Y3+, La3+, Ce3+, Pr3+, Nd3+, Pm3+, Sm3+, Eu3+, Gd3+, Tb3+, Dy3+,Ho3+, Er3+, Tm3+, Yb3+ and Lu3+, and the sum of the components is 100 mol%. The invention further discloses a method for preparing the boron germanotelluriteb scintillation glass which is rich in Gd2O3, and application of the ultra-high-density boron germanotelluriteb scintillation glass in X-ray medical imaging, industrial online detection, national safety supervision and high-energy physics or nuclear physics experiments.

The invention provides a method for preparing a high-remanent-polarization BiFeO3 film with preferentially growing (110) crystal face by a sol-gel process, which comprises the following steps: dissolving bismuth nitrate, ferric nitrate, neodymium nitrate and cobalt nitrate used as raw materials in a mol ratio of 0.90:(1-x):0.15:x (x=0.01-0.03) in mixed ethylene glycol monomethyl ether and acetic anhydride (in a volume ratio of 3:1) to obtain a stable BiFeO3 precursor solution with the metal ion concentration of 0.3 mol/L, wherein bismuth ions are 5% excessive to compensate the volatilization in the film annealing process; and evenly coating the BiFeO3 precursor solution on an FTO (fluorine-doped tin oxide) substrate, drying to obtain a dry film, and carrying out layer-by-layer quick annealing at 550 DEG C to obtain the crystalline BiFeO3 film with expected thickness. The facility requests are simple, the experimental conditions can be easily achieved, and the BiFeO3 film with preferentially growing (110) crystal face, of which the remanent polarization is higher than 130 mu C/cm<2>, can be prepared by accurately controlling the solvent ratio of the precursor solution and the codoping of the A-B position.

The invention discloses a preparation method of an organic-inorganic hybrid perovskite thin film. Conductive glass is used as a substrate; a lead sulfide thin film is prepared by adopting an electro-deposition method; the lead sulfide thin film is used as a precursor; an iodine elementary substance is used as an iodizating agent for iodizating lead sulfide into lead iodide; and then the lead iodide reacts with methyl ammonium halide to obtain the perovskite thin film. The method disclosed by the invention can be operated in a large area; a film layer is controllable in area and shape, and an electro-deposition area and shape can be controlled by a method of corroding a conducting plane; a thickness of the film layer is controlled, and the thickness of the film layer can be conveniently controlled by regulating electro-deposition time; chemical components of the film layer are controllable, and the film layers with different components can be obtained by changing a ratio of I to Br in CH3NH3X solution, so that the perovskite thin films with different physical properties are obtained; and the obtained film layer is relatively uniform and has good compactness.

The invention provides a preparation method of NH4Fe1-xMxPO4 and LiFe1-xMxPO4/C materials. The preparation method of the LiFe1-xMxPO4/C material includes preparing a phosphorus source compound, a ferrous iron compound, a bivalent M metallic salt compound (M=Ni, Co and Mn) and a reducing agent into a mixture water solution, enabling the mixture water solution to react with an ammonia water solution to synthesize a sheet-shaped NH4Fe1-xMxPO4 precursor, and performing lithium doping and high-temperature heat treatment to obtain the LiFe1-xMxPO4/C material. The LiFe1-xMxPO4/C material prepared according to the preparation method has the advantages of high energy density, good cycle performance and high rate capability and is suitable for the application field of lithium-ion power batteries. The preparation method has the advantages of simple steps, convenience in operation and high practicality.

The invention discloses a non-volatile resistance memory element and a preparation method thereof. The memory element comprises a NiO/Mgx Zn (1-x) O (x=0.4-1) p-n heterojunction thin-film layer as well as Pt electrodes which are respectively arranged on the upper and the lower surface of the heterojunction thin-film layer. The resistance memory element has stable and repeatable resistance switch characteristic, can be switched between two states of high resistance and low resistance with the corresponding voltage values distributed within the range of 0.55-0.6V, and has smaller radiation degree which is lower than 1V, so as to meet the requirements of practical application. Furthermore, the ratio between the high resistance and the low resistance of the memory element is higher and reaches 10, so that higher signal-to-noise ratio of devices can be guaranteed. Meanwhile, the memory element has lower initial current which is 1muA. The preparation method adopts a sol-gel method and has simple operation, low cost and manageable chemical composition; and the prepared film has no cracking, good compactness and even crystal grain distribution.

The invention relates to the technical field of cigarette manufacturing, and in particular relates to a production technology for remanufacturing tobacco leaves by adopting a paper-making method utilizing waste tobacco stems. The production technology comprises the following steps: material collecting, material pretreatment, extraction separation, pulping, coating, thermal-radiation drying, and finished product packaging. According to the production technology, the broken tobacco fragments and tobacco stems generated in the cigarette manufacturing and processing are utilized as raw materials, and are prepared into the functional tobacco material with the artificial adjustability through the process including the steps of extraction, puling, coating, drying and the like and by utilizing the paper-making method and principle; the processed product has the advantages of small density, low tar release amount, controllable chemical components and the like, after the product is applied to the cigarette, the effect of reducing the consumption of the raw material and the production cost is achieved, further, the tar content of the cigarette is greatly reduced, the perniciousness of the cigarette is reduced, and the smoking quality of the cigarette can be regulated. To sum up, the production technology for remanufacturing tobacco leaves by adopting the paper-making method utilizing the waste tobacco stems is simple and convenient, has few steps, and is high in production efficiency and low in cost.

The invention discloses divalent europium activated lithium borate scintillation glass for thermal neutron detection and a preparation method thereof, and relates to the field of inorganic rare earthluminescent materials. Trivalent europium (Eu<3+>) is doped into a lithium borate glass system, and transparent divalent europium (Eu<2+>) activated lithium borate scintillation glass can be preparedin the air atmosphere after a part of B2O3 in the glass is replaced by 0.1-5 mol% of BN. The lithium borate scintillation glass body comprises the following components in percentage: 0-66.67 mol% of Li2O, 0-100 mol% of B2O3, 0-8 mol% of BN, and the balance of externally doped rare earth Eu<3+> ions. The lithium borate glass is rich in compounds such as <6>Li and (or) <10>B with large neutron capture cross sections, and neutron energy can be efficiently captured by the scintillation glass through a nuclear reaction and is transmitted to a divalent europium ion light-emitting center, so that thepurpose of neutron detection is achieved. In addition, due to inherent transparency of the glass, the preparation process is simple, the components are easy to adjust, and the characteristics of lowcost, large volume and the like can be realized, so that the scintillation glass has important application values in the fields of neutron detection, neutron flight time, petroleum logging, nondestructive inspection, neutron photography and the like.

Belonging to the field of optical materials, the invention discloses a high density tellurate scintillation glass and a preparation method thereof. The tellurate glass comprises the following components: 25-100mol% of TeO2; 0-20mol% of Gd2O3; 0-17.5mol% of Lu2O3; 0-60mol% of WO3; and a rare earth ion activator. Specifically, the sum of the four components TeO2, Gd2O3, Lu2O3 and WO3 is 100mol%; wherein, the external or internal admixing concentration of the rare earth ion activator is 0.1-16mol% of the sum of the four components TeO2, Gd2O3, Lu2O3 and WO3. The invention also discloses a preparation method of the high density tellurate scintillation glass. The preparation temperature of the high density tellurate scintillation glass is not higher than 1000DEG C, and the density is 5.50-6.57g/cm<3>. The high density tellurate scintillation glass has wide application in X-ray medical imaging, industrial online detection, national security supervision, high energy physics or nuclear physicsexperiments.