120 results about "Lead iodide" patented technology

The invention discloses an inorganic-organic hybrid compound crystal and a preparation method thereof, and belongs to the technical field of organic-inorganic hybrid materials. The preparation method comprises the following steps: mixing raw materials containing hydroiodic acid, organic cage molecules RCC3 and a lead source with a solvent, and carrying out solvothermal reaction to obtain the inorganic-organic hybrid compound crystal. The chemical formula of the prepared inorganic-organic hybrid compound crystal is ({H18 [C72H108N12] 2 [(Pb10I36)]}. 2I), wherein [C72H108N12] is RCC3 acidified by hydroiodic acid, the crystal has a supramolecular three-dimensional structure assembled by a [Pb5I8] 3-anion cluster unit and a protonated RCC3 molecular cage through electrostatic and hydrogen-bond interaction, and belongs to a monoclinic system, and the space group is P21. The crystal structure is a metal halide-based organic-inorganic hybrid crystal constructed by taking an organic molecular cage as nitrogen-containing cations and lead iodide for the first time.

The invention discloses a full-perovskite laminated solar cell based on narrow-band-gap buried interface modification and a preparation method and application of the full-perovskite laminated solar cell. According to the preparation method of the full-perovskite laminated solar cell based on narrow-band-gap buried interface modification, hydrazine sulfate and lead iodide are introduced to serve as an interface modification layer between a narrow-band-gap perovskite layer and a hole transport layer, and through the synergistic effect of the hydrazine sulfate and the lead iodide, surface defects of the hole transport layer can be effectively passivated; moreover, the hole mobility can be improved remarkably, and the photoelectric conversion efficiency of the cell is improved based on the preparation method of the full-perovskite laminated solar cell. The full-perovskite laminated solar cell has high photovoltaic performance and can be widely applied to the photoelectric field.

The invention discloses a solar cell and a preparation method thereof, electric equipment and power generation equipment, the solar cell comprises a passivation material, and the passivation material comprises cations and anions; the cations comprise ammonium ions, and the anions comprise acid radical ions; the ammonium ions comprise substituted or unsubstituted alkyl ammonium ions, and the acid radical ions comprise any one of organic acid radical ions and inorganic acid radical ions. The positive ions in the passivation material can enter perovskite crystal lattices to form two-dimensional perovskite to play a role in protecting a light absorption layer, and the electron cloud density on the negative ions is relatively high and can act with excessive lead iodide in the perovskite to stabilize a lead-iodine octahedral framework, so that the passivation material can passivate the defects of a perovskite layer, and the light absorption performance of the light absorption layer is improved. And the photoelectric conversion efficiency and the stability of the solar cell device are improved.

The invention relates to the field of photoelectric functional materials and devices, and discloses a surface treatment method and a preparation method of a perovskite thin film and a perovskite solar cell, and the surface treatment method comprises the following steps: coating the surface of the perovskite thin film with a top interface molecular repair solution, and carrying out annealing treatment, wherein the top interface molecular repair solution comprises an organic solvent and a passivating agent. Chemical polishing is achieved through the mixed solvent in a specific proportion, residual excessive lead iodide on the surface of the thin film is accurately removed, and meanwhile surface defects are repaired in situ through triazine molecules which are resistant to high temperature and free of deprotonation risks. According to the collaborative strategy, the surface roughness and the defect state density of the perovskite thin film are remarkably reduced, and the photoelectric conversion efficiency and the long-term operation stability of the perovskite solar cell are effectively improved.

The invention discloses a functional formamidine salt treated perovskite solar cell and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite active layer, a perovskite modification layer, a hole transport layer and a metal counter electrode which are sequentially arranged from bottom to top, the perovskite light absorption layer is made of lead iodide formamidine perovskite; and the perovskite modification layer is a low-dimensional passivation layer which grows in a vertical orientation manner and is obtained by carrying out in-situ reaction on functional organic formamidine salt and the three-dimensional perovskite light absorption layer. According to the method, the surface defects of the three-dimensional perovskite thin film are effectively passivated, so that non-radiative recombination is effectively inhibited, and the charge transfer capability is improved; meanwhile, the interface energy level matching degree is optimized, and hole extraction is promoted. The preparation method provided by the invention is simple and easy to realize, has high repeatability, and effectively improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite thin film and a preparation method and application thereof. A fluorine-containing phosphazene compound is used as a ligand and is mixed with a perovskite precursor solution composed of lead iodide, formamidine iodine and cesium iodide, spin coating is performed, the fluorine-containing phosphazene compound and part of formamidine cations form hydrogen bonds, part of formamidine cations are anchored at the bottom of a perovskite film, Cs-formamidine cations are uniformly distributed, and the perovskite film is prepared. Meanwhile, the fluorine-containing phosphazene compound and Pb < 2 + > form a coordinate bond, Pb < 2 + > defects are passivated, and the perovskite thin film is obtained through anti-solvent treatment and annealing treatment. The fluorine-containing phosphazene compound interacts with the components in the perovskite precursor solution, so that the nucleation rate of perovskite can be increased, the crystallization rate can be slowed down, the tensile stress can be eliminated, the perovskite does not enter crystal lattices, and the stability and crystallinity of the film are guaranteed. The perovskite thin film can be used for an inverted perovskite solar cell, and the performance and the stability of a device are improved.

The invention discloses a method for preparing a perovskite solar cell based on a fused salt doped Spiro-OMeTAD hole transport layer, and the method comprises the steps: dissolving lead iodide and formamidine iodide in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide according to a molar ratio of (0.8-1.5): 1 to prepare an FAPbI3 perovskite precursor solution; the method comprises the following steps: mixing cyclohexylamine trifluoroacetic acid and 4-tert-butylpyridine according to a molar ratio of 1: (8-14), dissolving the mixture in a 70-110 mg / mL Spiro-OMeTAD chlorobenzene solution, adding an acetonitrile solution of LiTFSi, and stirring at normal temperature to obtain a hole transport material Spiro-OMeTAD solution; spin-coating the FTO substrate with an electron transport layer material, spin-coating the electron transport layer with the FAPbI3 perovskite precursor solution, and annealing to form a perovskite thin film; the method comprises the following steps: spin-coating an ammonium butyrate iodide solution on a perovskite thin film to obtain an interface modification layer, spin-coating a hole transport material Spiro-OMeTAD solution on the interface modification layer to obtain a cyclohexylamine trifluoroacetic acid doped Spiro-OMeTAD hole transport layer, and evaporating an interface modification layer and a metal electrode on the Spiro-OMeTAD hole transport layer.

The invention discloses a perovskite solar cell and a preparation method thereof, the preparation method comprises a step of preparing a perovskite light absorption layer, and the step of preparing the perovskite light absorption layer comprises the following steps: spin-coating a dissolved lead iodide precursor solution on a substrate with a carrier transport layer deposited on the surface, and carrying out heating treatment to prepare a lead iodide film; spin-coating the lead iodide thin film with an organic halogenated ammonium salt solution containing a hydroxybenzoic acid cross-linking agent, and carrying out heating treatment to obtain a perovskite thin film; wherein the hydroxybenzoic acid cross-linking agent at least comprises hydroxyl, carboxyl and a benzene ring. The performance of the perovskite light absorption layer prepared by the method is obviously improved.

The invention provides a perovskite thin film with a sandwich structure, a preparation method and application of the perovskite thin film and a perovskite solar cell, and belongs to the technical field of perovskite solar cells. According to the invention, the EDTA-2Na passivation layer is arranged between the ZnO electron transport layer and the perovskite layer, and EDTA-2Na and zinc ions on the surface of ZnO form a stable complex, so that the surface activity of ZnO is reduced, and the reaction between ZnO and methylamine lead iodide is inhibited; the EDTA-2Na can also enhance the interface bonding force between ZnO and perovskite, improve the interface contact state, reduce the interface resistance and facilitate the transmission and collection of charges; by limiting the thickness of the EDTA-2Na passivation layer, the function of the EDTA-2Na passivation layer can be fully played, and the situation that electron transmission is affected by the too thick passivation layer and the passivation effect is not obvious if the passivation layer is too thin is avoided.

The application provides a perovskite solar cell based on synergistic effect of an additive and a passivation agent and a preparation method thereof, the perovskite solar cell based on synergistic effect of the additive and the passivation agent comprising: conductive electrodes FTO, a first hole transport layer, a second hole transport layer, a perovskite active layer, a passivation layer, an electron transport layer, an interface modification layer and a metal electrode layer arranged in sequence; wherein the perovskite active layer is added with an additive fluoropyridine; the passivation layer is added with a passivation agent diammonium hydriodate; the additive and the passivation agent can simultaneously interact with constituent components in the perovskite. Through synergistic effect of the fluoropyridine additive and the diammonium hydriodate passivation agent, formation of lead iodide and a delta phase in the perovskite thin film is inhibited, crystallinity of the perovskite thin film is improved, and defect density is reduced, and finally a perovskite solar cell with high performance and high stability is obtained.

This invention relates to a perovskite solar cell doped with a disulfonic acid-based functionalized ionic liquid and its preparation method. By doping a perovskite precursor solution with a disulfonic acid-based functionalized ionic liquid, this invention effectively controls the crystallization process of perovskite, reduces lead iodide residue, and prepares a perovskite film with better crystallinity, larger and more uniform grain size, and a smoother surface, thereby improving the stability of the perovskite film. Furthermore, the presence of disulfonic acid groups in the ionic liquid anchors uncoordinated Pb ions, inhibits ion migration, and passivates defect states in the perovskite material, significantly improving the quality of the perovskite film and thus enhancing the photoelectric conversion efficiency and long-term stability of the solar cell. Simultaneously, after perovskite film formation, the ionic liquid is mainly distributed at the upper and lower interfaces, achieving synergistic passivation of the two interfaces of the perovskite film, further improving the photoelectric conversion efficiency and long-term stability of the solar cell.

The invention discloses a preparation method of a high-quality perovskite thick film for an X-ray detector, and relates to the technical field of radiation detection materials and devices. The preparation method of the thick film comprises the following steps: preparing a precursor solution from lead iodide, cesium iodide, formamidine iodide, methylamine iodide, 4-guanidinobenzoic acid hydrochloride, N, N-dimethylformamide and acetonitrile; a bulk phase functional additive is introduced to optimize a large number of Schottky defects at the grain boundary of the perovskite thick film; depositing onto a heated conductive glass substrate using a spray coating technique; and in combination with a low-temperature solvent atmosphere annealing process, secondary growth of crystal grains and grain boundary healing are promoted, and a large-area polycrystalline thick film can be obtained.

The present invention discloses a perovskite active layer doped with a carbazole-based small molecule, and its preparation method and application. The preparation method includes: dissolving formamidinium iodide, cesium iodide, lead iodide, and methylammonium iodide in an organic solvent to obtain a cesium-formamidinium-methylammonium lead iodide alloy perovskite precursor solution of the ABX3 configuration; doping a carbazole-based small molecule dopant into the perovskite precursor solution; and preparing a carbazole-based small molecule-doped perovskite active layer by any one of spin coating, blade coating, or spray coating. By introducing the carbazole-based small molecule, the present invention effectively adjusts the energy level of the perovskite, improves the crystallinity of the perovskite thin film, and prepares a p-i-n type perovskite solar cell without a hole transport layer. The photoelectric conversion efficiency of the battery device prepared by this method exceeds 26.6%, and it exhibits excellent long-term operation stability.

The application discloses a kind of perovskite ink based on 3D printing and its preparation method and application, comprising, ammonium salt and lead iodide are dissolved in mixed organic solvent, after stirring, perovskite precursor liquid is obtained;Additive is added to perovskite precursor liquid, and perovskite ink is obtained after heating and stirring;Wherein, the ammonium salt includes one or two of methyl iodide ammonium and phenethyl amine iodide.This application further improves the crystallization quality and environmental stability of perovskite material by synergistically utilizing the defect passivation and in-situ encapsulation effect of PVP (polyvinylpyrrolidone), so that the obtained perovskite ink can be innovatively applied to 3D printing technology for the first time to prepare a perovskite direct X-ray detector, solves the practical situation that the viscosity of traditional perovskite solution is low and difficult to 3D print, and provides a new material preparation technology for the development of high-sensitivity, high-resolution perovskite direct X-ray imaging detector.

This invention relates to the field of perovskite solar cell technology, and discloses a method for preparing a low-dimensional perovskite thin film and its solar cell. The method for preparing the low-dimensional perovskite thin film is as follows: Step 1, weighing p-fluorophenylethylamine iodine, methyl iodide, lead iodide, formamidine iodide, methyl ammonium chloride, and lead chloride, and dispersing them in a mixed solution composed of dimethylformamide and dimethyl sulfoxide to obtain a low-dimensional perovskite precursor solution; Step 2, dropping the low-dimensional perovskite precursor solution onto a substrate, rapidly spin-coating for 10-20 seconds, and then subjecting it to reverse-order cooling annealing to obtain a low-dimensional perovskite thin film. This invention rapidly forms a low-dimensional perovskite wet film through high-speed spin-coating, followed by reverse-order cooling annealing, which not only enables the preparation of low-dimensional perovskite thin films with vertically grown multiphase structures, but also has good repeatability and reduces the manufacturing cost of battery devices. The reverse-order cooling annealing process described in this invention is simple and suitable for industrial production.

The purpose of the present invention is to provide a method for manufacturing a perovskite solar cell in which lead iodide in a photoelectric conversion layer is reduced. The present invention relates to a method for manufacturing a solar cell provided with a photoelectric conversion layer containing a perovskite compound as a main component, the method comprising: a coating step for coating a coating surface with a precursor solution containing the perovskite compound as a solute; and an annealing step in which the coated surface to which the precursor solution is applied is heated at a temperature in the range of 80-120 DEG C for a period of 15-40 minutes.

The invention discloses a method for preparing a perovskite solar cell based on n-amyl propionate, and the method comprises the steps: preparing N, N-dimethylformamide and n-amyl propionate into a mixed solvent according to the volume ratio of (5.6-19): 1, and respectively adding lead iodide, iodoformamidine and chloromethylamine into the mixed solvent according to the molar ratio of 1: (0.8-1.2): (4.5-6.5) to prepare a perovskite precursor solution; spin-coating an electron transport layer material on the surface of ITO glass, annealing for 20-40 minutes under the condition of 120-180 DEG C to obtain an electron transport layer, blade-coating the perovskite precursor solution on the surface of the electron transport layer of the ITO glass, vacuumizing for 60-120 minutes, and annealing for 5-15 minutes under the condition of 120-160 DEG C to obtain a perovskite layer; and spin-coating a hole transport layer material on the surface of the perovskite layer, and carrying out vacuum evaporation on a modification layer and a metal electrode on the surface of the hole transport layer. According to the scheme, the problem that preparation of the titanium ore thin film through a traditional solvent must be carried out in a water-free and oxygen-free environment is solved; and the preparation process is low in cost, simple to operate and not easily influenced by environmental factors.

The invention discloses a preparation method of polycation black-phase perovskite microcrystal powder, and belongs to the technical field of new energy and photoelectric materials. The method comprises the following steps: dissolving formamidine iodide (FAI), cesium iodide (CsI), lead iodide (PbI2) and an accelerant n-propylamine hydrochloride (PACl) in an alcohol solvent according to a designed molar ratio to prepare a 0.2-2 mol.L <-1 > uniform solution, and heating and stirring to form a black precipitate; and quickly filtering, washing by using an alcohol solvent to remove the residual additive, and carrying out vacuum drying to obtain the high-purity black-phase microcrystalline powder. The prepared powder has uniform Cs / FA distribution, does not contain any yellow phase, remarkably inhibits cation segregation, improves the crystallization quality and phase stability, is simple in preparation process, is easy to remove auxiliary agent residues, and can be widely applied to preparation of photoelectric devices such as high-efficiency perovskite solar cells and the like.

The invention belongs to the field of perovskite solar cells, and particularly relates to a flexible perovskite solar cell device and a preparation method thereof. The flexible perovskite solar cell device sequentially comprises a flexible transparent substrate, a transparent conductive layer, an electron transport layer, a perovskite active layer, a hole transport layer and a metal electrode layer from bottom to top, wherein the perovskite active layer is a perovskite thin film passivated by organic hydrochloride, and comprises a perovskite thin film and an organic hydrochloride passivation layer covering the surface of the perovskite thin film. According to the flexible perovskite solar cell, organic hydrochloride micromolecular substances, especially D-p-hydroxyphenylglycine methyl ester hydrochloride, are adopted to treat the top interface of the perovskite layer of the flexible perovskite solar cell, organic cations enriched on the surface of the perovskite thin film and uncoordinated lead iodide are recrystallized, surface defects of the perovskite thin film are passivated, the quality of the perovskite thin film is improved, and the flexible perovskite solar cell is prepared. And non-radiative recombination of top interface carriers is reduced, so that the comprehensive performance of the flexible perovskite solar cell is remarkably improved.

Aiming at the problems of poor perovskite crystal quality, serious lead iodide residue, phase separation and the like in a high-humidity environment in the prior art, the preparation method comprises the following steps: adding 0.5-30mM of di-tert-butyl dicarbonate (BOC) into a lead iodide precursor solution, and carrying out coating and annealing treatment to obtain a perovskite layer; bOC is decomposed, and a gas phase barrier is formed in the perovskite crystallization process, so that moisture and oxygen permeation is effectively blocked, and high-quality crystallization of the perovskite thin film is realized. According to the method, BOC is used for gas-phase-assisted regulation and control of perovskite crystallization for the first time, the key technical problem of preparation of the perovskite solar cell in a high-humidity air environment is solved, and a reliable scheme is provided for low-cost and large-scale industrial application of the perovskite solar cell.

The invention provides a solar cell based on a Cu-doped lead-copper alloy perovskite light absorption layer and a preparation method of the solar cell, and the light absorption layer of the solar cell is a Cu-doped lead-copper alloy perovskite thin film Cs0. 05MA 0. 10FA 0. 85Pb1-xCuxI3, the preparation method of the lead-copper alloy perovskite thin film comprises the following steps: adding formamidine hydriodate, methylamine hydriodate, cesium iodide, lead iodide and cuprous iodide powder into a solvent, and uniformly stirring and mixing to prepare a perovskite precursor solution; the PbI2 powder and the CuI powder are uniformly mixed, the uniformly mixed precursor solution is spin-coated, annealing is carried out on a heating stage, the thin film is obtained, the ratio of the PbI2 powder to the CuI powder is 1-x: x, and x is equal to 0-10%. The copper-doped lead-copper alloy perovskite with the three-dimensional octahedral structure synthesized by the method has structural and thermodynamic stability and is high in fluorescence performance and light absorption performance, and the crystallization quality of a thin film is remarkably improved; when the perovskite thin film is used as a light absorption layer of the cell, a perovskite solar cell with high photoelectric conversion efficiency can be prepared, and the perovskite solar cell has excellent ultraviolet resistance and high temperature resistance stability.

The present application discloses a solar cell and a preparation method therefor, an electric device, and a power generation device. The solar cell comprises a passivation material, and the passivation material comprises cations and anions; the cations comprise ammonium ions, and the anions comprise acid radical ions; and the ammonium ions comprise substituted or unsubstituted hydrocarbyl ammonium ions, and the acid radical ions comprise any one of organic acid radical ions and inorganic acid radical ions. The cations in the passivation material can enter a perovskite lattice to form two-dimensional perovskite, so that the effect of protecting a light absorption layer is achieved; the electron clouds on the anions have high density, and can act with excessive lead iodide in perovskite, so that the lead iodide octahedral framework can be stabilized; and in this way, the passivation material can passivate the defects of a perovskite layer, thereby improving the photoelectric conversion efficiency and stability of the solar cell device.

The invention relates to a trans-broadband gap perovskite solar cell, and belongs to the technical field of perovskite solar cells. The structure of the trans-broadband gap perovskite solar cell sequentially comprises a hole transport layer, a perovskite light absorption layer, an interface passivation layer, an electron transport layer, a buffer layer and a metal electrode, the perovskite light absorption layer is prepared by spin-coating a perovskite precursor solution, dropwise adding an anti-solvent in the last stage of the spin-coating process and then performing annealing treatment; the 1-ethyl-3-methylimidazolium acetate additive is added into the perovskite precursor solution and can interact with undercoordinated lead ions, anions are passivated and ion migration is inhibited through interaction of static electricity and hydrogen bonds, and residues of lead iodide in perovskite are reduced, so that defects of a perovskite layer are reduced, and the performance of the perovskite is improved. Perovskite grains become more uniform and compact, the absorbance of a perovskite layer is improved, and non-radiative recombination is reduced. Therefore, the open-circuit voltage and the fill factor of the perovskite solar cell are improved, and the photoelectric conversion efficiency of the cell is improved.

The invention belongs to the technical field of solar cells, and particularly provides a passivation structure for a perovskite light absorption layer, a preparation method of the passivation structure, a perovskite solar cell and a crystalline silicon / perovskite laminated cell. The objective of the invention is to solve the problem that PbI2 decomposition of a perovskite / C60 interface in a conventional solar cell is liable to occur under continuous illumination, so that the irreversible efficiency of the cell is attenuated. Therefore, the passivation structure for the perovskite light absorption layer is a passivation layer formed on the perovskite light absorption layer, a passivator in the passivation layer is an organic matter containing R1, R2 and R3 at the same time, R1 is methylthio or sulfydryl, R2 is sulfo or sulfonyl, and R3 is an aromatic ring. When the passivation structure is applied to the solar cell, lead iodide decomposition caused by continuous illumination can be effectively inhibited, the efficiency attenuation speed is reduced, the photoelectric conversion efficiency and stability of the cell are improved, and the service life of the cell is prolonged.

The invention relates to a method for regulating and controlling perovskite crystallization based on molecules with a synergistic effect, a perovskite thin film and a battery module. The method comprises the following steps: adding the molecules with the synergistic effect into a precursor solution of metal halide lead iodide; according to the preparation method, covalent coordinate bonds between synergistic molecules and metal halide lead iodide and dual-mode interaction of non-covalent pi-Pb < 2 + > are utilized, and nucleation and crystal growth processes are regulated and controlled at the same time, so that the two continuous stages of nucleation and crystal growth are regulated and controlled in the crystallization process of perovskite, and the crystallization efficiency of perovskite is improved. And slow crystal growth can be accompanied after rapid nucleation, so that the large-size perovskite homogeneous film with high crystallinity, high uniformity and low defect state density can be obtained.

The present application discloses a method for preparing a perovskite layer, a tandem solar cell, and a preparation method. The method for preparing a perovskite layer comprises the following steps: S1, providing a cell substrate (1), and co-evaporating lead iodide and cesium bromide onto a surface of the cell substrate by a co-evaporation method to obtain a lead iodide / cesium bromide thin film (L1); S2, depositing an ion diffusion material on the surface of the lead iodide / cesium bromide thin film in S1 by a vapor deposition method to obtain an ion diffusion layer (L2); and S3, applying an ammonium salt precursor solution on the surface of the ion diffusion layer in S2 by a spin coating method, and performing annealing to obtain a perovskite layer (302).

The invention relates to a preparation method of a lead iodide solution, a perovskite battery, a photovoltaic module, a photovoltaic system, a power utilization device and a power generation device, and the preparation method of the lead iodide solution comprises the following steps: carrying out the mixed reaction of a lead simple substance and an iodine simple substance in a solvent system comprising a polar solvent to form the lead iodide solution, the number of donors of the polar solvent is greater than or equal to 20. The preparation method is simple in process and low in cost, the purity of the lead iodide product is high, and the photoelectric conversion efficiency of the perovskite battery can be improved when the lead iodide product is applied to preparation of the perovskite thin film of the perovskite battery.

The invention relates to a method for enhancing stability of a buried interface in a perovskite solar cell, and belongs to the technical field of perovskite solar cells. An electron transport layer SnO2, a 2-propynyl ammonium iodide layer, a perovskite active layer and a hole transport layer are sequentially prepared on a pretreated ITO conductive glass substrate, and the 2-propynyl ammonium iodide layer can convert residual lead iodide and form a PNA + doped perovskite structure, so that an interface energy band structure is regulated and controlled and decomposition caused by lead iodide is inhibited; the stability of the perovskite layer of the device is improved, and the photoelectric conversion efficiency of the perovskite solar cell subjected to PNAI treatment can be improved from 22.12% to 23.25%; under the heat treatment condition of 85 DEG C, the target device still keeps 93.4% of the initial photoelectric conversion efficiency after being aged for 1500 hours; a hygrothermal aging test (85 DEG C temperature and 85% relative humidity) shows that the target device still keeps 84.7% of initial photoelectric conversion efficiency after being aged for 1000 hours and still can keep 92% of initial photoelectric conversion efficiency after being illuminated for 2600 hours.

The invention relates to an application of a pyrimidine-based additive in a perovskite solar cell. A pyrimidine derivative with moderate Lewis alkalinity is selected as the additive and forms a moderate and stable coordination intermediate with a lead iodide precursor, so that nucleation of alpha-phase formamidine lead iodide can be accelerated and defect generation can be inhibited; the method is suitable for planar formal and trans-structure devices, the photoelectric conversion efficiency of 25% or above is achieved in the formal structure and the trans-structure, and excellent stability is kept under the long-time operation and storage conditions. The invention provides an additive design principle based on pyrimidine molecules, and provides a theoretical basis and a technical path for development of high-performance and long-life perovskite photovoltaic devices.

The present application relates to the field of perovskite microcrystal, and particularly relates to a black-phase CsPbI3 perovskite microcrystal, a full-inorganic thin film and a preparation method thereof.The preparation method comprises the following steps: mixing cesium iodide, lead iodide and a solvent to obtain a precursor solution; mixing the precursor solution, a heterogeneous metal ion stress inducer and a perfluorinated organic ligand, and performing a reaction to obtain the black-phase CsPbI3 perovskite microcrystal.The preparation method of the full-inorganic thin film comprises the following steps: mixing the black-phase CsPbI3 perovskite microcrystal and a high-polarity solvent, and performing dispersion to obtain ink; coating the ink on a substrate, and performing annealing treatment to obtain the full-inorganic thin film.The present application rewrites the thermodynamic stability interval by introducing a lattice stress field in the microcrystal synthesis stage, and realizes low-temperature preparation of the full-inorganic thin film by using the phase template effect.