1021results about "Radiation controlled devices" patented technology

Disclosed herein is a single photon avalanche diode (SPAD) pixel circuit, including a SPAD having an anode coupled to a negative voltage and a cathode and a cascode transistor having a drain coupled to the cathode of the SPAD, a gate controlled by a cascode control signal, and a source. A readout circuit is coupled to the source of the cascode transistor and configured to detect a voltage change at the source of the cascode transistor and generate a pulse indicating an occurrence of an avalanche event. An active quenching circuit is coupled to the cathode of the SPAD and configured to detect an onset of the avalanche event and pull the cathode of the SPAD to a negative voltage to quench the avalanche event.

A subpixel including at least one second-conductivity-type pinned photodiode layer that forms a p-n junction with a substrate semiconductor layer, at least one floating diffusion region, and at least one transfer gate stack structure. The at least one transfer gate stack structure may at least partially laterally surround the at least one second-conductivity-type pinned photodiode layer with a total azimuthal extension angle in a range from 240 degrees to 360 degrees around a geometrical center of the second-conductivity-type pinned photodiode layer. The at least one transfer gate stack structure may include multiple edges that overlie different segments of a periphery of the at least one second-conductivity-type pinned photodiode layer, and the floating diffusion region includes a portion located between the first edge and the second edge. In addition, multiple transfer gate stack structures and multiple floating diffusion regions may be present in the subpixel.

A control circuitry region of a pixel sensor of a semiconductor device includes a plurality of conversion gain circuits that may be selectively activated and / or deactivated in various combinations to enable a plurality of sequential conversion gain operations to be performed across an exposure operation of the semiconductor device. The control circuitry region may include a first conversion gain circuit and a second conversion gain circuit that are connected to a floating diffusion node of the pixel sensor in parallel. The selectable parallel conversion gain circuits enable sequential conversion gain operations to be performed for the pixel sensor such that the capacitance in the pixel sensor may be gradually increased through the conversion gain operations. Gradually increasing the capacitance in the pixel sensor across the sequential conversion gain operations provides for smaller signal-to-noise ratio (SNR) drops, which enables a low SNR drop to be achieved for the pixel sensor.

A semiconductor structure includes: an epitaxial layer; photo-detecting portions disposed in the epitaxial layer and spaced apart from each other, each of the photo-detecting portions including a p-n junction; and trench isolations disposed in the epitaxial layer, each of the trench isolations being disposed to separate two adjacent ones of the photo-detecting portions from each other. Each of the trench isolations includes a first dielectric layer having a first refractive index and a first thickness, and a second dielectric layer having a second refractive index that is different from the first refractive index, and a second thickness that is different from the first thickness. The first dielectric layer and the second dielectric layer are arranged to prevent a light incident to one of the photo-detecting portions from entering an adjacent one of the photo-detecting portions.

An image sensor comprising a photodiode, an inter-layer dielectric layer, and a deep trench isolation structure is described. The photodiode is disposed within a semiconductor substrate having a front side and a backside opposite the front side. The inter-layer dielectric layer is disposed over the front side of the semiconductor substrate such that the front side is disposed between the inter-layer dielectric layer and the backside. The deep trench isolation structure is configured to isolate the photodiode from adjacent photodiodes included in the image sensor. The deep trench isolation structure includes a trench disposed within the inter-layer dielectric layer and the semiconductor substrate and a fill material disposed within the trench. The trench extends through the inter-layer dielectric layer and the front side of the semiconductor substrate towards the backside of the semiconductor substrate.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

An image sensor structure including a substrate, a pixel structure, and a deep trench isolation (DTI) structure is provided. The substrate includes a first side and a second side opposite to each other. The pixel structure includes a transfer transistor, a light sensing device, and a floating diffusion region. The transfer transistor includes a first gate. The first gate is disposed on the first side of the substrate. The light sensing device is disposed in the substrate and is located on one side of the first gate. The floating diffusion region is disposed in the substrate and is located on another side of the first gate. The DTI structure extends into the substrate from the second side of the substrate. The top-view pattern of the floating diffusion region does not overlap the top-view pattern of the DTI structure.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

To provide an image pickup device capable of suppressing quality degradation of a pixel signal.SOLUTION: The image pickup device comprises: a first photoelectric conversion part for generating electric charge by photoelectric conversion of light and a shading part which shades a portion of light incident into the first photoelectric conversion part; a second photoelectric conversion part for generating electric charge by photoelectric conversion of light; an accumulation part for accumulating at least one of the electric charge generated by the first photoelectric conversion part and the electric charge generated by the second photoelectric conversion part; a supply part which supplies a predetermined voltage: a first connection part capable of connecting the accumulation part with the supply part; and a second connection part capable of connecting the first photoelectric conversion part with the supply part.SELECTED DRAWING: Figure 3

Advanced processing is performed in a chip. A stacked light-receiving sensor according to an embodiment includes a first substrate (100, 200, 300), a second substrate (120, 320) bonded to the first substrate, and connection wiring (402) bonded to the second substrate. The first substrate includes a pixel array (101) in which a plurality of unit pixels are arranged in a two-dimensional matrix. The second substrate includes a converter (17A) configured to convert an analog pixel signal output from the pixel array to digital image data and a processing unit (14) configured to perform a process for data based on the image data. At least a part of the converter is disposed on a first side in the second substrate. The processing unit is disposed on a second side opposite to the first side in the second substrate. The connection wiring is attached to a side other than the second side in the second substrate.

This X-ray detector which detects an X-ray and generates a corresponding output signal comprises: a TFT array including a plurality of pixel TFT circuits each generating the output signal according to the intensity of the detected X-ray; a gate circuit configured to apply, to the TFT array, a gate signal for driving the plurality of pixel TFT circuits; and a readout circuit configured to receive the output signal generated by each of the plurality of pixel TFT circuits and transmit the output signal to the outside. The gate circuit comprises: a gate chip-on film configured to generate the gate signal and apply the gate signal to the TFT array; and a gate connection FPCB circuitly connected to the gate chip-on film so as to receive a driving signal for generating the gate signal and transmit the driving signal to the gate chip-on film. The gate chip-on film and the gate connection FPCB are respectively arranged along different sides of the X-ray detector.

The image sensor includes a photoelectric conversion layer, a color filter layer disposed on the photoelectric conversion layer, a buffer layer disposed on the color filter layer, a meta layer, and an anti-reflective layer coated on the meta layer. The meta layer includes a lining layer on the buffer layer and a plurality of top nano-structures protruded from the lining layer in a direction away from the photoelectric conversion layer. The anti-reflective layer includes a first portion on a top surface of a first nano-structure of the top nano-structures and a second portion on a sidewall of the first nano-structure, and a height of the first portion is greater than a width of the second portion.

A semiconductor device may include a plurality of single-photon avalanche diode (SPAD) pixels. The semiconductor device may be a backside device that includes a sensor wafer stacked with an integrated passive component (IPC) wafer. The sensor wafer may include the SPAD pixels in an array across the sensor wafer. The IPC wafer may include active microcells that include quench resistors and dummy microcells that omit or disconnect the quench resistors. The sensor wafer may be bonded to the IPC wafer through hybrid bonding. The regions with active microcells may form active areas of the semiconductor device, while the regions with dummy microcells may form inactive areas. In this way, the active areas and inactive areas of the semiconductor device may be configurable by adjusting the active and dummy microcells of the IPC wafer.

Various embodiments of the present disclosure are directed towards a semiconductor device including a plurality of photodetectors disposed within a substrate, where the substrate has a front-side opposite a back-side. The semiconductor device includes a floating diffusion node disposed in the substrate, where the photodetectors are disposed around the floating diffusion node. A trench isolation structure is disposed within the substrate and laterally surrounds the photodetectors. The trench isolation structure includes a first isolation structure disposed in the substrate and having a first depth, where the first isolation structure is disposed between adjacent photodetectors and is laterally offset from the floating diffusion node. The trench isolation structure includes a second isolation structure extending from the back-side of the substrate towards the floating diffusion node, where the second isolation structure directly overlies the floating diffusion node and has a second depth less than the first depth.

An image sensor includes a sensing unit. The sensing unit includes a plurality of pixels. Each of the plurality of pixels includes at least one photodiode, at least one first transistor and a first source follower transistor. The sensing unit further includes a plurality of second transistors and a second source follower transistor. In each of the plurality of pixels, the at least one photodiode is electrically connected to the first source follower transistor at least through the at least one first transistor, and electrically connected to the second source follower transistor at least through at least one corresponding second transistor among the plurality of second transistors.

Disclosed herein are approaches for forming nanopillars of an image sensor. One method of forming an image sensor may include forming an etch stop layer atop a spacer layer, wherein the spacer layer is formed over a color filter, and forming a first optical material layer over the etch stop layer. The method may further include forming a plurality of pillars from the optical material layer, forming an opening through a first pillar of the plurality of pillars, the opening exposing the etch stop layer, and removing the etch stop layer by performing a wet etch through the opening, wherein the wet etch forms a cavity beneath the plurality of pillars. The method may further include forming a second optical material layer within the cavity.

An image sensor includes a substrate, a first floating diffusion region and a second floating diffusion region in the substrate and spaced apart from each other, a ground region in the substrate and spaced apart from the first floating diffusion region and the second floating diffusion region, a first interconnection line on the substrate and connecting the first floating diffusion region and the second floating diffusion region, and a second interconnection line on the substrate and connected to the ground region, where the first interconnection line is at a first level and the second interconnection line is at a second level that is different from the first level.

A photodetector includes a first base, a second base, and a light blocker. The first base includes a first semiconductor substrate in which a first photoelectric conversion element is disposed. The first photoelectric conversion element converts entering light into electric charge. The second base is disposed on an opposite side of the first base to a light entering side and includes a second semiconductor substrate in which a second photoelectric conversion element is disposed. The second photoelectric conversion element converts entering light into electric charge. The light blocker is disposed, as viewed from the light entering side, along and around a side surface of the second photoelectric conversion element. The light blocker extends from a surface of the second base on the light entering side through at least the second semiconductor substrate in a thickness direction. The light blocker blocks light from the second photoelectric conversion element.

The disclosure provides a structure with a doped well between a photodetector and an optical interface of a semiconductor layer. A structure of the disclosure includes a semiconductor layer having a first surface configured for optically interfacing with incident radiation, and a second surface opposite the first surface. A photodetector is within the semiconductor layer and on the second surface thereof. A doped well is within the semiconductor layer between the photodetector and the first surface. The doped well has a same conductivity type as the semiconductor layer and a higher dopant concentration than the semiconductor layer.

A CMOS type image sensor includes a substrate that includes a first side and a second side that are opposite to each other, a pixel isolation pattern that defines a plurality of unit pixels that are two-dimensionally arranged inside the substrate, and a photoelectric conversion region inside each of the unit pixels. The pixel isolation pattern includes a first insulating film, a first material film, a second insulating film, a second material film, and a gap fill conductive film that are sequentially stacked on an inner wall of the substrate. One end of the first material film adjacent to the first side and one end of the second material film adjacent to the first side are each in contact with the gap fill conductive film, and the first material film and the second material film include a different material from the first insulating film and the second insulating film.

Disclosed herein are approaches for forming nanopillars of an image sensor. One method of forming an image sensor may include forming a first etch stop layer over a color filter, and forming a first trench fill material within a first plurality of trenches formed in a first spacer layer, wherein the first trench fill material extends to the first etch stop layer. The method may further include forming a second etch stop layer over the first trench fill material, and forming a second trench fill material within a second plurality of trenches of a second spacer layer, wherein the second spacer layer is formed over the second etch stop layer. The method may further include forming an opening through the first and second spacer layers, the opening exposing the first etch stop layer, and performing a wet etch through the opening to remove the first and second spacer layers.

To improve the signal-to-noise ratio at high sensitivity readout while allowing for expansion of the dynamic range.SOLUTION: A solid-state imaging element 4 has a plurality of pixel blocks BL having one photoelectric conversion part PD, a node P, and one transfer switch TX provided corresponding to one photoelectric conversion part PD to transfer charge from the photoelectric conversion part PD to the node P, an electrical connection provided between a node P of one pixel block BL and a node P in one other pixel block BL, and a plurality of connecting switches SWa and SWb per one of the pixel blocks BL provided in the connection.SELECTED DRAWING: Figure 2

Embodiments of image sensors and methods of fabrication are provided herein. In some embodiments, a device includes: a substrate having a dielectric layer disposed atop the substrate; a pillar disposed within the dielectric layer; and a plurality of voids arranged in an array within the dielectric layer, wherein the pillar is disposed between adjacent voids of the plurality of voids. A two-dimensional array of color filters can be disposed atop the substrate having respective voids of the plurality of voids disposed between adjacent color filters and having the pillar disposed between adjacent voids and between diagonally disposed color filters of the array of color filters. A plurality of photoelectric elements can be disposed in the substrate and correspond to and be disposed beneath individual color filters of the array of color filters.

A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.

To provide an image pickup device and an image pickup element that removes noise line segments that occur when correlated double sampling of pixels is not performed in an image pickup element that calculates the signals of adjacent pixels.SOLUTION: An image pickup element has a first substrate 111 on which an arithmetic unit is provided that performs a third signal calculation on the basis of a first signal 18 based on the charge generated by a pixel 10 that photoelectrically converts light and a second signal for correcting the first signal 18, and a second substrate 112 on which a control unit is provided that controls the arithmetic unit.SELECTED DRAWING: Figure 5

An image sensor includes a semiconductor substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, the semiconductor substrate having a trench formed through the first surface and the second surface; a micro-lens on the second surface; an isolation layer in the trench that isolates the pixels from each other; and an etching barrier layer in the isolation layer and having a first depth from the first surface. The etching barrier layer has a corrosion resistance higher than a corrosion resistance of a region of the semiconductor substrate other than the etching barrier layer.

To provide an image sensor capable of suppressing the decrease in light reception quantity in a gradation pixel.SOLUTION: An image sensor includes a first gradation pixel and a detection pixel provided at a position adjacent to the first gradation pixel. The first gradation pixel includes a first photoelectric conversion unit, and a first current collector unit that collects light in a first wavelength band in the first photoelectric conversion unit. The detection pixel is provided at a position adjacent to the first gradation pixel, and includes a detection photoelectric conversion unit and a detection circuit that detects the temporal change of the amount of light incident on the detection photoelectric conversion unit. In the first current collector unit, a high-refractive-index region having a predetermined refractive index and a low-refractive-index region having a lower refractive index than the high-refractive-index region are provided in accordance with a predetermined pattern.SELECTED DRAWING: Figure 3A

An image sensor comprising a first die, a second die, and a plurality of pixel cells arranged in rows and columns to form a pixel cell array is described. The first die and the second die are stacked to form a bonding interface disposed therebetween. A first pixel cell included in the plurality of pixel cells includes a photodiode, disposed within the first die, configured to photogenerate image charge in response to incident light, a flighting diffusion, disposed within the first die, coupled to receive the image charge, and a lateral overflow integration capacitor, disposed within the second die, selectively coupled to the floating diffusion through a first bonding connection formed at the bonding interface.

A photo-sensing device includes a substrate and a trench isolation. The substrate has a pixel region. The trench isolation is disposed within the substrate, defines the pixel region and incudes an etching stop layer and an isolation structure. The isolation layer is connected with the etching stop layer. The etching stop layer has a minimum width in a direction, the isolation portion has a maximum width in the direction, and the minimum width and the maximum width are different.

Various embodiments of the present disclosure are directed towards a device including an interconnect structure over a substrate. A bond structure is over the interconnect structure. The bond structure includes a first plurality of conductive bond pads disposed in a first region and a second plurality of conductive bond pads disposed in a second region. The second region is adjacent to at least one side of the first region. A first pitch of the first plurality of conductive bond pads is less than a second pitch of the second plurality of conductive bond pads.