420results about "Radiation controlled devices" patented technology

A subpixel including at least one second-conductivity-type pinned photodiode layer that forms a p-n junction with a substrate semiconductor layer, at least one floating diffusion region, and at least one transfer gate stack structure. The at least one transfer gate stack structure may at least partially laterally surround the at least one second-conductivity-type pinned photodiode layer with a total azimuthal extension angle in a range from 240 degrees to 360 degrees around a geometrical center of the second-conductivity-type pinned photodiode layer. The at least one transfer gate stack structure may include multiple edges that overlie different segments of a periphery of the at least one second-conductivity-type pinned photodiode layer, and the floating diffusion region includes a portion located between the first edge and the second edge. In addition, multiple transfer gate stack structures and multiple floating diffusion regions may be present in the subpixel.

A control circuitry region of a pixel sensor of a semiconductor device includes a plurality of conversion gain circuits that may be selectively activated and / or deactivated in various combinations to enable a plurality of sequential conversion gain operations to be performed across an exposure operation of the semiconductor device. The control circuitry region may include a first conversion gain circuit and a second conversion gain circuit that are connected to a floating diffusion node of the pixel sensor in parallel. The selectable parallel conversion gain circuits enable sequential conversion gain operations to be performed for the pixel sensor such that the capacitance in the pixel sensor may be gradually increased through the conversion gain operations. Gradually increasing the capacitance in the pixel sensor across the sequential conversion gain operations provides for smaller signal-to-noise ratio (SNR) drops, which enables a low SNR drop to be achieved for the pixel sensor.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

A photodetector includes a first base, a second base, and a light blocker. The first base includes a first semiconductor substrate in which a first photoelectric conversion element is disposed. The first photoelectric conversion element converts entering light into electric charge. The second base is disposed on an opposite side of the first base to a light entering side and includes a second semiconductor substrate in which a second photoelectric conversion element is disposed. The second photoelectric conversion element converts entering light into electric charge. The light blocker is disposed, as viewed from the light entering side, along and around a side surface of the second photoelectric conversion element. The light blocker extends from a surface of the second base on the light entering side through at least the second semiconductor substrate in a thickness direction. The light blocker blocks light from the second photoelectric conversion element.

Disclosed herein are approaches for forming nanopillars of an image sensor. One method of forming an image sensor may include forming a first etch stop layer over a color filter, and forming a first trench fill material within a first plurality of trenches formed in a first spacer layer, wherein the first trench fill material extends to the first etch stop layer. The method may further include forming a second etch stop layer over the first trench fill material, and forming a second trench fill material within a second plurality of trenches of a second spacer layer, wherein the second spacer layer is formed over the second etch stop layer. The method may further include forming an opening through the first and second spacer layers, the opening exposing the first etch stop layer, and performing a wet etch through the opening to remove the first and second spacer layers.

An image sensor comprising a first die, a second die, and a plurality of pixel cells arranged in rows and columns to form a pixel cell array is described. The first die and the second die are stacked to form a bonding interface disposed therebetween. A first pixel cell included in the plurality of pixel cells includes a photodiode, disposed within the first die, configured to photogenerate image charge in response to incident light, a flighting diffusion, disposed within the first die, coupled to receive the image charge, and a lateral overflow integration capacitor, disposed within the second die, selectively coupled to the floating diffusion through a first bonding connection formed at the bonding interface.

An image sensor device includes a capacitor structure that is configured to store charge associated with a photocurrent that is generated by a pixel sensor in a pixel sensor array of the image sensor device. The capacitor structure may include bottom electrode layers and top electrode layers that are arranged in an alternating manner and separated by insulator layers. The ends of the bottom electrode layers facing a top contact structure are etched such that the ends of the bottom electrode layers are spaced apart from the top contact structure. Similarly, the ends of the top electrode layers facing a bottom contact structure are etched such that the ends of the top electrode layers are spaced apart from the bottom contact structure.

To provide a solid-state imaging element capable of securing a high reliability, and to provide a method of manufacturing such a solid-state imaging element.SOLUTION: A solid-state imaging element 1 comprises a semiconductor substrate 2, a first element part 3, and a second element part 4. The first element part 3 has a light-receiving unit 31 and a transfer unit 32. The second element part 4 has a capacitance unit 101. The transfer unit 32 has a first transfer electrode 81, a second transfer electrode 82, and an insulating layer 92. The capacitance unit 101 has: a first capacitance electrode 111 and a second capacitance electrode 112 overlapping each other; and an insulating layer 122. A part of the first transfer electrode 81 overlaps a part of the second transfer electrode 82. The insulating layer 92 includes a first portion 92A located between the part of the first transfer electrode 81 and the part of the second transfer electrode 82. The insulating layer 122 includes a second portion 122A located between the first capacitance electrode 111 and the second capacitance electrode 112. A thickness T1 of the first portion 92A is larger than a thickness T2 of the second portion 122A.SELECTED DRAWING: Figure 4

To obtain accurate distance image data by removing noise and to obtain distance image data in a short time by reducing the number of integrations, and to provide a distance image processing system that includes a solid-state image sensor that can be used for three-dimensional object recognition for use in autonomous driving of passenger cars and the like.SOLUTION: To process images including distance information obtained by a TOF solid-state image sensor, commonly known as a TOF camera by using deep learning, and reduce noise and enables highly accurate distance images to be obtained by deep learning.SELECTED DRAWING: Figure 2

To provide an infrared ray cut filter, a filter for a solid-state image sensor, a solid-state image sensor, and a method for manufacturing a filter for a solid-state image sensor that can achieve both developability and infrared ray absorptive power of the infrared ray cut filter.SOLUTION: An infrared ray cut filter 13 includes: a cyanine dye including polymethine, cations located at terminals of polymethine and having heterocycles containing nitrogen, and tris(pentafluoroethyl)trifluorophosphate anions; a polymer including a repeating unit represented by the following formula (1) or the following formula (2); and a naphthoquinonediazide compound.SELECTED DRAWING: Figure 1

An SPAD with a mesa structure has an etch stop layer that allows a first high-precision etch process that forms substrate contact plugs around the mesa to be combined with a second high-precision etch process that forms a metal grid. The etch stop layer is provided with a first elevation adjacent the substrate contact plugs and a second elevation adjacent the metal grid. The second elevation is greater than the first elevation. In a process, holes for the substrate contact plugs and trenches for the metal grid are etched down to the etch stop layer. After a break-through etch, a third etch process deepens the holes and the trenches to their final depths. The metal grid may land on a second etch stop layer that is absent from an area around the substrate contact plugs. This structure and process provide lower cost SPADs with mesa structures.

An image sensing module includes an extending substrate. An image sensor and a lens module are respectively formed on the first surface and the second surface of the extending substrate. The width of the extending substrate is wider than the width of the image sensor to improve dimension mismatches between the lens module and the image sensor. An enclosure is formed on the lower surface of the extending substrate to prevent lights from entering into the sensing area of the image sensor from the sidewall of the image sensor. Sealing glues are adhered between the image sensor and the enclosure.

Provided is an imaging device and the like that can improve reliability and suppress a decrease in conversion gain of at least some pixels. [Solution] The imaging device includes a plurality of pixels 10, including pixel 10A. Each of the plurality of pixels 10 includes a photoelectric conversion unit 12 that converts light into signal charges, a charge storage node FD that stores the signal charges, and a protection transistor 25, one of whose source and drain are electrically connected to the charge storage node FD. The gate of the protection transistor 25 of pixel 10A is electrically connected to the charge storage node FD of pixel 10B and is electrically insulated from the charge storage node FD of pixel 10A.

To provide a photoelectric conversion apparatus that achieve both of improvement of light emission crosstalk and maintenance of sensitivity.SOLUTION: A photoelectric conversion apparatus disclosed herein is a photoelectric conversion apparatus including a semiconductor layer. The photoelectric conversion apparatus includes: a plurality of photoelectric conversion elements that each include a photoelectric conversion unit disposed on a side of a first surface of the semiconductor layer, and in which light of a light source enters from a side of a second surface opposite to the first surface of the semiconductor layer; a first element isolation portion that extends in the semiconductor layer from the first surface toward the second surface between neighboring first photoelectric conversion element and second photoelectric conversion element of the plurality of photoelectric conversion elements; and a second element isolation portion that extends in the semiconductor layer from the second surface toward the first surface between the first photoelectric conversion element and the second photoelectric conversion element, and comes into contact with the first element isolation portion. The first element isolation portion includes a coated portion whose conductive material is coated with an insulation material and the coated portion is in contact with the second element isolation portion.SELECTED DRAWING: Figure 2

An image sensor comprising a photodiode and a forked deep trench isolation (DTI) structure is described. The photodiode is disposed within a semiconductor substrate having a first side and a second side opposite the first side. The forked DTI structure is configured to isolate the photodiode from adjacent photodiodes included in the image sensor. The forked DTI structure includes a trench disposed within the semiconductor substrate between the first side and the second side, a forked structure disposed within the trench and including a first prong, a second prong, and an intermediary portion to form a first cavity within the trench, and a second cavity disposed within the trench. The first cavity includes a first material and the second cavity includes a second fill material.

To provide a technique advantageous for suppressing a temperature rise of a semiconductor element.SOLUTION: An electronic component includes a base body, a Peltier element, a semiconductor element mounted on a mounting surface of the base body via the Peltier element, and a frame body disposed to surround a side surface of the semiconductor element, wherein a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame body via a conductive wire, and the base body and the frame body are bonded by a bonding member having a lower thermal conductivity than the base body.SELECTED DRAWING: Figure 1

To provide an optical sensor capable of performing highly accurate optical sensing of a scene.SOLUTION: The optical sensor includes a unit D1 including x blocks 11, for example, three (x = 3) blocks a, b, and c, each having a plurality of pixels 12 arranged in a first direction 11A in a plan view. The pixels 12 are arranged at a pixel pitch D1 in the first direction P1. The three blocks a, b, and c are arranged side by side in a second direction D1 orthogonal to the first direction D2, and are arranged to be shifted from each other by P1 / 3 in the first direction D1. For example, the light receiving elements 11A and 10b each including the units 10a corresponding to the number of stages of the TDI are arranged so as to partially overlap each other in the D1 in the first direction, and the optical sensing is performed using the blocks a and b in which the positional deviation of the pixels 12 is minimized. In addition, by increasing the size of each of the light receiving elements 10a and 10b in the second direction D2, inclination at the time of mounting, poor connection, and the like are suppressed.SELECTED DRAWING: Figure 10

The present invention provides an X-ray detector comprising: a sensor panel which has flexibility; at least one first flexible circuit unit which is attached along a first edge of the sensor panel and has a gate IC mounted therein; at least one second flexible circuit unit which is attached along a second edge of the sensor panel and has a readout IC mounted therein; a third flexible circuit unit which is attached to one end of the first edge; and a main circuit unit which is connected to the third flexible circuit unit and has a timing controller mounted thereon, wherein a gate control signal output from the main circuit unit is provided to the gate IC via the third flexible circuit unit.

To provide an imaging device that suppresses reflection of incident light still more effectively and has excellent sensitivity characteristics. This imaging device includes a semiconductor substrate and a photoelectric conversion section. The semiconductor substrate includes a multi-stepped recess in which a plurality of respective holes defined by first outlines having substantially polygonal shapes is continuous in a thickness direction. The substantially polygonal shapes extend along a first surface orthogonal to the thickness direction and are different from each other in size in a plan view taken along the thickness direction. The photoelectric conversion section generates electric charge through photoelectric conversion. The photoelectric conversion section is defined by a second outline including a portion inclined with respect to the first outlines of the holes in a plan view. The electric charge corresponds to an amount of incident light passing through the multi-stepped recess.

A sensor package structure includes a substrate, a sensor chip disposed on the substrate, a plurality of first metal wires, a plurality of second metal wires, a ring-shaped supporting layer formed on the sensor chip, and a light-permeable sheet. The first metal wires and the second metal wires are connected to the substrate and the sensor chip. Each edge of a top surface of the sensor chip is provided with at least one of the second metal wires adjacent thereto. Each of the second metal wires has a highest endpoint that is higher than a highest endpoint of any one of the first metal wires with respect to the substrate, and the light-permeable sheet is disposed on the ring-shaped supporting layer and abuts against the highest endpoints of the second metal wires, such that the first metal wires are not in contact with the light-permeable sheet.

To provide a photoelectric conversion device in which signal loss is reduced.SOLUTION: A first photoelectric conversion part and a second photoelectric conversion part are arranged to align in a first direction, in a plan view with respect to a substrate. Sensitivity of a third photoelectric conversion part is lower than any of sensitivity of the first photoelectric conversion part and sensitivity of the second photoelectric conversion part. In the plan view, the third photoelectric conversion part is arranged along a portion of a circumference of an area including the first photoelectric conversion part and the second photoelectric conversion part.SELECTED DRAWING: Figure 3

To improve stability at the time of mounting a cover while enabling removal of the cover of a package. The package includes: a cover; a mounting portion to which the cover is mounted; a barrier metal layer provided between the cover and the mounting portion; a metal bonding layer formed on the barrier metal layer; and a solder layer that is bonded to the metal bonding layer and connects the cover and the mounting portion. The barrier metal layer may not interdiffuse with the solder layer. The barrier metal layer may be formed on the cover. The barrier metal layer may be formed on the substrate. The barrier metal layer may be formed on the semiconductor chip.

To reduce the noise of an imaging device.SOLUTION: An imaging device includes a substrate, a photodiode semiconductor layer on the substrate, an upper electrode and a lower electrode having the photodiode semiconductor layer held therebetween, and a light-blocking wire upper than the upper electrode when the substrate is regarded as a lowermost layer. The photodiode semiconductor layer includes a first semiconductor layer, and a second semiconductor between the first semiconductor layer and the lower electrode. The photodiode semiconductor layer includes a concave part excluding the first semiconductor layer in a region covered with the light-blocking wire in a plan view. In a region overlapping with the concave part in the plan view, the upper electrode is excluded. In the region overlapping with the concave part in the plan view, a part of the second semiconductor layer and a part of the lower electrode exist.SELECTED DRAWING: Figure 3B

A sensor package includes a circuit substrate, a sensor die, an electrical connection, a dielectric dam, a cover layer, and an encapsulant. The circuit substrate includes a first side, a second side opposite to the first side, and a cavity recessed from the first side toward the second side. The sensor die is disposed in the cavity and includes a first side, a sensing area on the first side, and a second side opposite to the first side and facing the circuit substrate. The electrical connection electrically connects the first sides of the sensor die and the circuit substrate. The dielectric dam is disposed on the first side of the circuit substrate and outside the cavity, and the dielectric dam partially covers the electrical connection. The encapsulant is disposed on the first side of the circuit substrate and laterally covers the dielectric dam and the cover layer.

To provide an optical substrate capable of suppressing diffuse reflection. [Solution] An optical substrate 10 according to one embodiment of the present invention comprises a transparent substrate 11 and a light-shielding film 12 laminated in a rectangular frame shape on one main surface of the transparent substrate 11, and the light-shielding film 12 has a plurality of groove structures 122 formed in a stripe shape on the surface opposite the contact surface of the transparent substrate 11.

This inspection device inspects an inspection object which has an imaging device into which light enters from a side opposite a wiring layer. The inspection device includes: a mounting platform through which light can pass that has a mounting surface on which the inspection object is to be mounted in a manner facing the opposite side of the imaging device with respect to the wiring layer; a mounting platform operating part capable of moving the mounting platform vertically and horizontally; and an irradiation device that irradiates inspection light onto the imaging device through the mounting surface. The mounting platform operating part changes, by moving the mounting platform, the relative position of the irradiation device with respect to the inspection object mounted on the mounting surface.

Some embodiments relate to an integrated circuit device having an IC layer including a plurality of pixel cell groups. Each pixel cell group includes a plurality of pixel cells arranged in a 2-by-2 configuration. Each pixel cell includes a photodetector in a substrate, and a transfer transistor electrically coupled to the photodetector and configured to transfer electrical charge collected at the photodetector across a first surface of the substrate. The IC layer further includes at least one dielectric structure extending from the first surface to a second surface of the substrate and separating each pixel cell from neighboring pixel cells. The dielectric structure includes a first gap disposed at a common corner of the pixel cells. A conductive structure is electrically connected to at least one of the photodetector or the transfer transistor of each of the pixel cells and is disposed in the first gap over the first surface.

To provide a transistor with excellent electric characteristics.SOLUTION: A semiconductor device includes a semiconductor, a first insulator provided in contact with the semiconductor, a first conductor provided in contact with the first insulator and overlapping with the semiconductor through the first insulator, and a second conductor and a third conductor provided in contact with the semiconductor. Any one or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.SELECTED DRAWING: Figure 1

A semiconductor structure includes a first well in a semiconductor substrate, a plurality of fin-like doped regions over and coupled to the first well in the semiconductor substrate, and a second well over the first well and the plurality of fin-like doped regions in the semiconductor substrate. The first well and the plurality of fin-like doped regions comprise a first conductivity type, and the second well comprises a second conductivity type complementary to the first conductivity type. A first interface is formed between the second well and the first well, a second interface is formed between the second well and the plurality of fin-like doped regions, and each of the first interface and the second interface has a non-planar configuration.