115results about "Thyristor" patented technology

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

FinFET multi-diode thyristor switches for protecting high data rate communication system interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and / or reduces total on-state resistance.

The invention discloses an RC-IGCT-based superconducting hybrid DC circuit breaker, and relates to the topological structure and working principle analysis of DC circuit breakers. The circuit topology comprises two parts: (1) a resistance-type superconducting fault current limiter R-SFCL and a UDS isolation switch adopting a TP KEMA arc model are connected in series, and (2) a current commutation component composed of diodes VD1-VD4, a current injection branch and a current commutation branch. VD1-VD4 are used for conducting bidirectional current; the current injection branch comprises a pre-charging capacitor C, an inductor L and a thyristor T which are connected in series; the current commutation branch circuit is formed by connecting a power electronic switch, an RCD buffer branch circuit and an energy absorption branch circuit in parallel, and the energy absorption branch circuit is composed of a metal oxide lightning arrester; the invention further discloses a current breaking method of the superconducting hybrid direct-current circuit breaker. According to the invention, quick switching-off can be realized after fault current occurs, the rise rate of the fault current is limited, and the loss and the cost are low under the normal through-current condition.

A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

The present description concerns a circuit for converting from a first alternating voltage to a second voltage. The circuit includes: a first thyristor; a first control circuit of the first thyristor; a power factor correction circuit comprising a coil; and a first circuit configured to convert a third voltage into a fourth DC voltage. The third voltage corresponds to a difference between a potential at a first node connected to an output node of the coil and a reference potential. The fourth DC voltage is configured to supply the first control circuit of the first thyristor, and is referenced with respect to the same reference potential as the third voltage.

An energy conversion device 100 for an electrolysis system (150) comprises: an adjustable transformer (101) having a primary side (102) connectable to an AC grid (103) via a point of common coupling, a secondary side (104) and a tap switch (105); a rectifier transformer (106, 107) having a primary side (108, 109) configured to provide a secondary side voltage differing by a predetermined phase shift; a thyristor rectifier unit (114, 115, 116, 117) forming a multi-pulse rectifier system (118) that receives the secondary side voltage and provides a DC current to the electrolyser unit (119, 120, 121, 122); and a protection controller unit 133 for connecting / disconnecting the device to / from the power grid as a function of a comparison of the secondary-side voltage to a corresponding secondary-side threshold voltage, where the multi-pulse rectifier system comprises a synchronization control circuit (123, 124, 125, 126) providing thyristor gate pulses at an emission angle synchronized with the secondary-side voltage, and a protection controller unit 133 for connecting / disconnecting the device to / from the power grid as a function of a comparison of the secondary-side voltage to a corresponding secondary-side threshold voltage. And wherein the respective secondary-side threshold voltage is determined from a nominal threshold voltage specified by a grid guideline at the point of common coupling and a physical transformer parameter adjusted according to tap switch position information (129).

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.

To provide an organic semiconductor ink that can achieve excellent photoelectric properties while using a solvent that is free from deleterious substances and halogens.SOLUTION: An organic semiconductor ink comprises: a p-type semiconductor compound, as a copolymer that comprises a repeat unit of a heterocyclic compound comprising a nitrogen atom and a repeat unit of a heterocyclic compound comprising a sulfur atom; an n-type semiconductor compound having an electron affinity of 3.5 eV or more; and an anisole derivative comprising a benzene ring with no direct bond with a halogen group.SELECTED DRAWING: Figure 1

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); - a nonlinear inductor (27) serially coupled between the output of the voltage selector (26); - a gate control unit (23) configured to control the voltage selector (26) to control switching of the gate commutated thyristor (21) in its turn-on state comprising a turn-on pulse generation, a positive-gate-voltage backporch operation, a negative-gate-voltage backporch operation and a retrigger pulse generation; wherein the nonlinear inductor (27) has a nonlinearity to have a high inductance during any of the backporch operations and to have a low inductance during the turn-on pulse generation and retrigger pulse generation.

According to one embodiment, the semiconductor device (100) comprises a semiconductor body (1) having a first side (10) and a second side (20) opposite the first side. The semiconductor device further comprises a first thyristor structure (I) and a second thyristor structure (II). The second thyristor structure is arranged laterally beside the first thyristor structure. Each of the first thyristor structure and the second thyristor structure comprises a first base region (11a, 11b) on the first side and a gate electrode (1a, 1b) on the first side adjacent to the assigned first base region. The first base regions of the two thyristor structures are regions of the semiconductor body and are of the same conductivity type. The gate electrodes of the thyristor structures are individually and singly electrically contactable.

The invention relates to a system (2) for converting a first voltage (U1) into a second voltage (U2), comprising: a converter (4) provided with at least two input terminals (5), at least two output terminals (8), and at least one electronic switching branch (10), the or each branch (10) comprising two switching half-branches (16) connected in series to an intermediate terminal (8), the at least one half-branch (16) comprises at least one switching member (19), the or each switching member (19) comprising a controllable electronic switch (20); and means (6) for controlling the or each electronic switch (20) of the or each branch (10); the converter (4) further comprises, for the or each electronic switch (20), a passive voltage limiting component (12) connected to said electronic switch (20), thermally coupled to said electronic switch (20) and having a negative temperature coefficient.

Disclosed herein is a static transfer switch and methods of operating the same. The static transfer switch includes a first switch between a first voltage source and a load, and a second switch between a second voltage source and the load. The first switch and the second switch are configured to alternate power to the load between the first voltage source or the second voltage source. The static transfer switch also includes a first parallel circuit branch coupled in parallel to the first switch, the first parallel circuit branch comprising a first passive element and a first auxiliary switch.

The present disclosure relates to a fully controllable power semiconductor switch assembly (40) comprising: a first cell (51, 61, 71) comprising a latch-type power semiconductor switching device (41) controlled by a first gate terminal (44); a second unit (52, 62, 72) comprising an unlatched power semiconductor switching device (42) controlled by a second gate terminal (45); and a power semiconductor diode (43). The latch-type power semiconductor switching device (41) and the non-latch-type power semiconductor switching device (42) are connected in a parallel configuration with respect to the current switched by the switching assembly (40). The power semiconductor diodes (43) are connected in an anti-parallel configuration with respect to the current switched by the switching assembly (40). The present disclosure also provides a power semiconductor device (100), a snubber-free power converter, and a method for manufacturing a snubber-free power converter.

Embodiments of the present disclosure relate to a method, apparatus for operating a conduction assembly, a start device, and a computer-readable medium. The conduction assembly is coupled between an AC power supply and an inductive load, and comprises a first switch device and a second switch device which are in anti-series connection, the first switch device comprises a first body diode in anti-parallel connection with the first switch device, and the second switch device comprises a second body diode in anti-parallel connection with the second switch device. The method comprises: conducting the conduction assembly at a first conduction angle in a first cycle; conducting the conduction assembly in a second cycle at a second conduction angle that is greater than the first conduction angle, wherein in the first cycle and second cycle, a turn-off timing of the first switch device or the second switch device in anti-parallel connection with the first body diode or second body diode having a conduction direction the same as a current direction is determined based on the current flowing through the conduction assembly. The method proposed here may reduce the power loss of the soft start circuit.

A method of operating a silicon controlled rectifier (SCR) is provided. The method may include coupling the SCR to receive an AC voltage signal between an anode and a cathode of the SCR. The method may further include applying a gate current between a gate of the SCR and the cathode, when the AC voltage signal has a first phase angle, corresponding to a first voltage polarity, wherein the SCR switches from an OFF state to an ON state. The method may also include, at a second phase angle of the AC voltage signal, corresponding to a zero voltage cross of the AC voltage signal or to a second voltage polarity, turning off the gate current between the gate and the cathode.

A power control device for power factor correction includes a rectifier rectifying an input current, a first switch and a second switch connected to an output of the rectifier to control a phase of the output of the rectifier, a first current sensor sensing a current through the first switch and a second current sensor sensing a current through the second switch, a low pass filter filtering the currents sensed by the first current sensor and the second current sensor, and at least one processor sampling the currents filtered by the low pass filter once per entire switching cycle of the first switch and the second switch and performing balancing control based on the sampled currents such that an average value of the current through the first switch and the current through the second switch is uniform for a certain period.

A semiconductor package includes at least a first die. The first die includes an internal circuit disposed on a substrate, an electrostatic discharge (ESD) protection circuit disposed on the substrate but laterally spaced from the internal circuit and including a first charge dissipation element, and a first Silicon Controlled Rectifier (SCR) laterally adjacent to and spaced from the first charge dissipation element.

The present disclosure provides an electronic device for driving a switch. An example electronic device for driving a switch includes: a first d driving circuit of the switch referenced to the first terminal adapted receive an alternating potential, formed on a first substrate, and comprising a first diode whose cathode is connected to the first substrate; a second driving circuit referenced to the second terminal adapted to receive a reference potential, formed on a second substrate, and comprising a second diode whose cathode is connected to the second substrate; and an anode of the first diode is connected to the second driving circuit, and an anode of the second diode is connected to the first driving circuit.

The invention discloses a quick response thyristor switching circuit with power-on false trigger protection. The quick response thyristor switching circuit comprises a system power supply, a thyristor and a load, a system power supply is connected with the anode of the thyristor, a control signal is connected with the control electrode of the thyristor through a resistor, and the cathode of the thyristor is connected with a load; the system is characterized in that a time-delay power-on circuit is arranged between the anode of the thyristor and the system power supply, the system power supply supplies power to the time-delay power-on circuit, the time-delay power-on circuit is used for delaying the time when a system power-on signal reaches the thyristor, and the delay time is longer than the duration of peak pulses generated by the front end of a control electrode of the thyristor when the system is powered on. Therefore, the thyristor is powered on after the pre-stage power-on spike pulse disappears. According to the invention, the problem of power-on misconduction can be solved under the condition that the response time of the thyristor switch is not reduced.

The invention discloses silicon controlled rectifier operation in a continuous current mode. A method of operating a silicon controlled rectifier (SCR) is provided. The method may include coupling the SCR to receive an AC voltage signal between an anode and a cathode of the SCR. The method may also include applying a gate current between a gate and a cathode of the SCR when the AC voltage signal has a first phase angle corresponding to the first voltage polarity, where the SCR switches from an OFF state to an ON state. The method may also include turning off a gate current between the gate and the cathode at a second phase angle of the AC voltage signal corresponding to a zero voltage cross of the AC voltage signal or corresponding to a second voltage polarity.

Provided is a station device configured to detect a first zero crossing point (ZCP) and a second ZCP with respect to an alternating current (AC) input voltage, by using a ZCP circuit configured to detect a ZCP of the AC input voltage applied to the station device, obtain information about a pulse width from the first ZCP to the second ZCP; identify whether the AC input voltage is in an overvoltage state, based on the information about the pulse width from the first ZCP to the second ZCP, and deactivate an operation of the suction motor, when the AC input voltage is in the overvoltage state. Where detecting the first ZCP and the second ZCP includes detecting voltage points which are offset from 0 V by a preset value in the AC input voltage.

A system for turning on thyristors is presented, the system comprising: an input configured to be coupled to a power source; an output configured to be coupled to a load; a first branch coupled between the input and the output and including a first thyristor having a first threshold voltage; a second branch coupled between the input and the output and coupled in parallel with the first branch, the second branch including a second thyristor having a second threshold voltage higher than the first threshold voltage; and at least one controller configured to control the system to selectively generate a biasing voltage across the second thyristor to induce a change in a voltage across the second thyristor from a first voltage to a second voltage, the first voltage being less than the second threshold voltage and the second voltage being greater than the second threshold voltage.

This disclosure provides a semi-conductor circuit, having at least one branch with at least one gate-controllable semi-conductor; and a gate control circuit (120) for selectively triggering the semi-conductor (110) into a conductive state; the gate control circuit (120) includes a voltage detector configured to determine a voltage value representative of an electrical voltage applied to the semi-conductor (110), wherein the gate control circuit (120) is configured to determine, based on the determined voltage value, the presence of a fault condition and, upon a presence of the fault condition being determined, to trigger the semi-conductor (110) into a conductive state. This disclosure further provides a method of protecting a gate-controllable semi-conductor and an electronic device having a plurality of gate-controllable semi-conductors being connected in series and the semi-conductor circuit according to this disclosure.

An apparatus and method that can accelerate the turn off time for a thyristor current interrupter. Following commutation of a load current from a main thyristor to an auxiliary turn-off unit, a capacitor of the auxiliary turn-off unit can provide a resonant current to create a zero current crossing for turning the main thyristor off, as well as provide a reverse bias voltage for the main thyristor. The auxiliary turn-off unit can hold the main thyristor off and facilitate sufficient time being available for main thyristor to block forward system voltage. A voltage level of another capacitor of the auxiliary turn-off unit can, with a switch of the auxiliary turn-off unit and the main thyristor turned off, be increased to a level that triggers at least one voltage-clamping unit to absorb electrical power from that capacitor. The load current passing in the auxiliary turn-off unit can be decreased as the electrical power is absorbed to a level at which one or more auxiliary thyristor switches of the auxiliary turn-off unit can be turned off.

The utility model discloses an adjustable transformer rectifier which comprises a controllable rectifier, the bottom of the controllable rectifier is fixedly connected with a heat conducting plate, the front and back of the heat conducting plate are both provided with clamping grooves, the bottom of the heat conducting plate is provided with a heat dissipation plate, the top of the heat dissipation plate is fixedly connected with two symmetrical sliding grooves, and the sliding grooves are arranged in the clamping grooves. The controllable rectifier is located between the two symmetrical sliding grooves, and the bottom of the heat dissipation plate is fixedly connected with two pairs of symmetrical fixing plates. According to the utility model, by pulling the pull handle, the pull rod drives the two symmetrical clamping blocks to deviate from each other, at the moment, the spring is extruded and contracted, the controllable rectifier is placed at the top of the heat dissipation plate, the pull handle is loosened, the spring is stretched, the spring pushes the clamping blocks to enter the inner cavity of the clamping groove, and the rectifier can be fixed through the fixing structure; the problem that a user needs to consume much time when disassembling, assembling and overhauling the rectifier is avoided, and the aim of improving the overhauling efficiency of the rectifier is achieved.

The invention relates to a system (2) for converting a first electrical voltage (U1) into a second electrical voltage (U2) comprising a converter (4) provided with at least two input terminals (5), at least two output terminals (8), and at least one electronic switching branch (10), the or each branch (10) comprising two switching half-branches (16) connected in series at an intermediate terminal (8), at least one half-branch (16) comprising at least one switching member (19), the or each switching member (19) comprising a controllable electronic switch (20); and a device (6) for controlling the or each electronic switch (20) of the or each branch (10);the converter (4) further comprising, for the or each electronic switch (20), a passive voltage-limiting component (12) connected to said electronic switch (20), thermally coupled to said electronic switch (20), and having a negative thermal coefficient. Abstract figure: Fig. 1;

The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor integrated silicon controlled rectifier and methods of manufacture. The structure includes: a first region having a first dopant type provided in a semiconductor substrate; a second region having a second dopant type provided in the semiconductor substrate; an isolation region between the first region and the second region; a first semiconductor layer vertically contacting the first region, the first semiconductor layer having a dopant type opposite from the first dopant type; a second semiconductor layer vertically contacting the second region, the second semiconductor layer having a dopant type opposite from the second dopant type; a polysilicon material vertically contacting the first semiconductor layer; and a single crystalline semiconductor material vertically contacting the first semiconductor layer and the second semiconductor layer.

The invention discloses a temperature drift resistant thyristor overvoltage protection circuit construction method and system, and relates to the technical field of power electronics, and the method comprises the steps: collecting the voltage between an anode and a cathode of a thyristor, dividing the voltage, and connecting the divided voltage to the in-phase input end of a voltage comparator, the operational amplifier outputs a forward-saturated or reverse-saturated voltage signal after passing through the voltage comparator; the output of the voltage comparator is subjected to voltage division through a resistor; the voltage is connected to a current amplification circuit composed of an in-phase proportional amplifier and an OTL complementary symmetric amplification circuit; the output end of the current amplification circuit is connected with a current-limiting resistor through a voltage-regulator tube, a diode and then connected to a gate pole of the thyristor, when the thyristor bears forward overvoltage, the voltage-regulator tube breaks down, the gate pole of the thyristor is triggered to conduct the thyristor, and the overvoltage protection function of the thyristor is achieved; according to the thyristor overvoltage protection circuit, the overvoltage protection speed and precision can be improved, the temperature drift of the triode amplification circuit is inhibited, and the thyristor overvoltage protection function with high sensitivity and temperature drift resistance is realized.

The invention relates to a system (2) for converting a first voltage (U1) into a second voltage (U2) comprising a converter (4) provided with at least two input terminals (5), at least two output terminals (8), and at least one electronic switching branch (10), the or each branch (10) comprising two switching half-branches (16) connected in series to an intermediate terminal (8), at least one half-branch (16) comprising at least one switching member (19), the or each switching member (19) comprising a controllable electronic switch (20); and a device (6) for controlling the or each electronic switch (20) of the or each branch (10); the converter (4) further comprising, for the or each electronic switch (20), a passive voltage-limiting component (12) connected to the electronic switch (20), thermally coupled to the electronic switch (20), and having a negative thermal coefficient.

The utility model discloses a self-recognition built-in and external photoelectric induction control circuit, and mainly relates to the technical field of electronic circuit control. Comprising a bidirectional thyristor Q1, a power supply VCC, a resistor R22, a resistor R2, a resistor R3, a built-in photoelectric triode Q5, a resistor R4, a resistor R5, an external photoelectric triode Q6, a control chip IC1, a connector JP1 and a connector JP2. According to the utility model, whether built-in light control takes effect or external light control takes effect can be automatically identified, and the anti-interference capability is strong.