3results about "Thyristor" patented technology

This disclosure provides a turn-off circuit, a drive circuit, an IGCT, an electrical device, and a turn-off method. The turn-off circuit is used for a gate-commutated thyristor, which includes a first lead, a second lead, and a control lead. The turn-off circuit includes a control device and a voltage regulation circuit. The control device is configured to output a control signal to the voltage regulation circuit. The voltage regulation circuit includes a control sub-circuit, a voltage-adjustable switching element, and a voltage source. A first terminal of the voltage-adjustable switching element is electrically connected to the control lead of the gate-commutated thyristor, a second terminal of the voltage-adjustable switching element is electrically connected to a first terminal of the voltage source, the control lead of the voltage-adjustable switching element is electrically connected to the control sub-circuit, and the second terminal of the voltage source is electrically connected to the first lead of the gate-commutated thyristor. The control sub-circuit is configured to control the voltage-adjustable switching element to be turned on or off, or to control the voltage-adjustable switching element to be clamped at a predetermined voltage, based on the control signal.

This disclosure relates to a fully controllable power semiconductor switching assembly (40) comprising a first unit (51, 61, 71) having a latching power semiconductor switching device (41) controlled by a first gate terminal (44), a second unit (52, 62, 72) having a non-latching power semiconductor switching device (42) controlled by a second gate terminal (45), and a power semiconductor diode (43). The latching power semiconductor switching device (41) and the non-latching power semiconductor switching device (42) are connected in parallel with respect to the current switched by the switching assembly (40). The power semiconductor diode (43) is connected in antiparallel with respect to the current switched by the switching assembly (40). This disclosure further provides a power semiconductor device (100), a snubberless power converter, and a method for manufacturing the same.

The invention relates to a power supply device (1) for an electrolysis cell (2), wherein a first winding (111) of a first transformer (11) is provided to be connected to a power supply network (20), wherein an on-grid rectifier (13) is connected on the AC voltage side to a second winding (112) of the first transformer (11), wherein a DC voltage side interface (131) of the on-grid rectifier (13) is designed as an interface of the electrolysis cell (2). In order to improve the power supply device (1), the invention proposes that an off-grid rectifier (14) is connected on the AC voltage side to a second winding (122) of a second transformer (12), wherein the off-grid rectifier (14) is connected on the DC voltage side to an electrical power source, wherein a first winding (121) of the second transformer (12) is arranged electrically in series with one of the windings (111, 112) of the first transformer (11). The invention also relates to an electrolysis device (10) having such a power supply device (1) and at least one electrolysis cell (2). The invention also relates to a method for operating such a power supply device (1) or such an electrolysis device (10). The invention also relates to a control device which is configured to carry out such a method.