45results about "Thyristor" patented technology

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); - a nonlinear inductor (27) serially coupled between the output of the voltage selector (26); - a gate control unit (23) configured to control the voltage selector (26) to control switching of the gate commutated thyristor (21) in its turn-on state comprising a turn-on pulse generation, a positive-gate-voltage backporch operation, a negative-gate-voltage backporch operation and a retrigger pulse generation; wherein the nonlinear inductor (27) has a nonlinearity to have a high inductance during any of the backporch operations and to have a low inductance during the turn-on pulse generation and retrigger pulse generation.

The invention relates to a system (2) for converting a first voltage (U1) into a second voltage (U2), comprising: a converter (4) provided with at least two input terminals (5), at least two output terminals (8), and at least one electronic switching branch (10), the or each branch (10) comprising two switching half-branches (16) connected in series to an intermediate terminal (8), the at least one half-branch (16) comprises at least one switching member (19), the or each switching member (19) comprising a controllable electronic switch (20); and means (6) for controlling the or each electronic switch (20) of the or each branch (10); the converter (4) further comprises, for the or each electronic switch (20), a passive voltage limiting component (12) connected to said electronic switch (20), thermally coupled to said electronic switch (20) and having a negative temperature coefficient.

Disclosed herein is a static transfer switch and methods of operating the same. The static transfer switch includes a first switch between a first voltage source and a load, and a second switch between a second voltage source and the load. The first switch and the second switch are configured to alternate power to the load between the first voltage source or the second voltage source. The static transfer switch also includes a first parallel circuit branch coupled in parallel to the first switch, the first parallel circuit branch comprising a first passive element and a first auxiliary switch.

Embodiments of the present disclosure relate to a method, apparatus for operating a conduction assembly, a start device, and a computer-readable medium. The conduction assembly is coupled between an AC power supply and an inductive load, and comprises a first switch device and a second switch device which are in anti-series connection, the first switch device comprises a first body diode in anti-parallel connection with the first switch device, and the second switch device comprises a second body diode in anti-parallel connection with the second switch device. The method comprises: conducting the conduction assembly at a first conduction angle in a first cycle; conducting the conduction assembly in a second cycle at a second conduction angle that is greater than the first conduction angle, wherein in the first cycle and second cycle, a turn-off timing of the first switch device or the second switch device in anti-parallel connection with the first body diode or second body diode having a conduction direction the same as a current direction is determined based on the current flowing through the conduction assembly. The method proposed here may reduce the power loss of the soft start circuit.

A power control device for power factor correction includes a rectifier rectifying an input current, a first switch and a second switch connected to an output of the rectifier to control a phase of the output of the rectifier, a first current sensor sensing a current through the first switch and a second current sensor sensing a current through the second switch, a low pass filter filtering the currents sensed by the first current sensor and the second current sensor, and at least one processor sampling the currents filtered by the low pass filter once per entire switching cycle of the first switch and the second switch and performing balancing control based on the sampled currents such that an average value of the current through the first switch and the current through the second switch is uniform for a certain period.

A semiconductor package includes at least a first die. The first die includes an internal circuit disposed on a substrate, an electrostatic discharge (ESD) protection circuit disposed on the substrate but laterally spaced from the internal circuit and including a first charge dissipation element, and a first Silicon Controlled Rectifier (SCR) laterally adjacent to and spaced from the first charge dissipation element.

The present disclosure provides an electronic device for driving a switch. An example electronic device for driving a switch includes: a first d driving circuit of the switch referenced to the first terminal adapted receive an alternating potential, formed on a first substrate, and comprising a first diode whose cathode is connected to the first substrate; a second driving circuit referenced to the second terminal adapted to receive a reference potential, formed on a second substrate, and comprising a second diode whose cathode is connected to the second substrate; and an anode of the first diode is connected to the second driving circuit, and an anode of the second diode is connected to the first driving circuit.

The invention discloses a quick response thyristor switching circuit with power-on false trigger protection. The quick response thyristor switching circuit comprises a system power supply, a thyristor and a load, a system power supply is connected with the anode of the thyristor, a control signal is connected with the control electrode of the thyristor through a resistor, and the cathode of the thyristor is connected with a load; the system is characterized in that a time-delay power-on circuit is arranged between the anode of the thyristor and the system power supply, the system power supply supplies power to the time-delay power-on circuit, the time-delay power-on circuit is used for delaying the time when a system power-on signal reaches the thyristor, and the delay time is longer than the duration of peak pulses generated by the front end of a control electrode of the thyristor when the system is powered on. Therefore, the thyristor is powered on after the pre-stage power-on spike pulse disappears. According to the invention, the problem of power-on misconduction can be solved under the condition that the response time of the thyristor switch is not reduced.

Provided is a station device configured to detect a first zero crossing point (ZCP) and a second ZCP with respect to an alternating current (AC) input voltage, by using a ZCP circuit configured to detect a ZCP of the AC input voltage applied to the station device, obtain information about a pulse width from the first ZCP to the second ZCP; identify whether the AC input voltage is in an overvoltage state, based on the information about the pulse width from the first ZCP to the second ZCP, and deactivate an operation of the suction motor, when the AC input voltage is in the overvoltage state. Where detecting the first ZCP and the second ZCP includes detecting voltage points which are offset from 0 V by a preset value in the AC input voltage.

An apparatus and method that can accelerate the turn off time for a thyristor current interrupter. Following commutation of a load current from a main thyristor to an auxiliary turn-off unit, a capacitor of the auxiliary turn-off unit can provide a resonant current to create a zero current crossing for turning the main thyristor off, as well as provide a reverse bias voltage for the main thyristor. The auxiliary turn-off unit can hold the main thyristor off and facilitate sufficient time being available for main thyristor to block forward system voltage. A voltage level of another capacitor of the auxiliary turn-off unit can, with a switch of the auxiliary turn-off unit and the main thyristor turned off, be increased to a level that triggers at least one voltage-clamping unit to absorb electrical power from that capacitor. The load current passing in the auxiliary turn-off unit can be decreased as the electrical power is absorbed to a level at which one or more auxiliary thyristor switches of the auxiliary turn-off unit can be turned off.

The utility model discloses an adjustable transformer rectifier which comprises a controllable rectifier, the bottom of the controllable rectifier is fixedly connected with a heat conducting plate, the front and back of the heat conducting plate are both provided with clamping grooves, the bottom of the heat conducting plate is provided with a heat dissipation plate, the top of the heat dissipation plate is fixedly connected with two symmetrical sliding grooves, and the sliding grooves are arranged in the clamping grooves. The controllable rectifier is located between the two symmetrical sliding grooves, and the bottom of the heat dissipation plate is fixedly connected with two pairs of symmetrical fixing plates. According to the utility model, by pulling the pull handle, the pull rod drives the two symmetrical clamping blocks to deviate from each other, at the moment, the spring is extruded and contracted, the controllable rectifier is placed at the top of the heat dissipation plate, the pull handle is loosened, the spring is stretched, the spring pushes the clamping blocks to enter the inner cavity of the clamping groove, and the rectifier can be fixed through the fixing structure; the problem that a user needs to consume much time when disassembling, assembling and overhauling the rectifier is avoided, and the aim of improving the overhauling efficiency of the rectifier is achieved.

The invention discloses a thyristor control method, device, equipment and system, a medium and a program product, and relates to the technical field of trigger control of a thyristor series structure, the thyristor control method is used for thyristor valve control equipment, and the thyristor valve control equipment is connected with the thyristor series structure. The method comprises the following steps: determining a trigger delay duration corresponding to each thyristor in a thyristor series structure; based on the reference trigger time and the trigger delay duration of each thyristor, determining the trigger time of each thyristor; and controlling the corresponding thyristor to be conducted at the triggering moment of each thyristor. According to the invention, the reference trigger time can be delayed according to the trigger delay duration of each thyristor, so that the synchronous triggering of each thyristor in the thyristor series structure is realized, and the control reliability is improved.

A circuit includes a transistor configured to control pre-charging a charge storage device, and a diode coupled in parallel with the transistor. It also includes a shunt resistor coupled between the source of the transistor and a positive end of the charge storage device, an inductor coupled between the shunt resistor and the positive end of the charge storage device, and a current controller coupled to a gate of the transistor. The current controller is configured to receive a current measurement indicating an amount of current flowing through the transistor, process the current measurement to determine a switching duty cycle for the transistor, and to provide a signal to the gate of the transistor, the signal oscillating at the switching duty cycle. It also includes a power supply coupled with the source of the transistor and the drain of the transistor and configured to supply power to the current controller.

The invention provides a high di / dt magnetically controlled thyristor switching device applied to field inversion and a control method. The device comprises a high-voltage pulse capacitor, a main thyristor branch, a magnetic switch and a demagnetizing loop. Wherein the main thyristor branch comprises a main thyristor, and the anode of the main thyristor is connected to the anode of the high-voltage pulse capacitor. The magnetic switch is connected in series with the main thyristor and forms a main discharge loop together with a load; the magnetic switch is composed of at least one magnetic core with a rectangular hysteresis loop and a coil wound on the magnetic core. And the demagnetizing loop is coupled with the magnetic switch and is used for reversely demagnetizing the magnetic core before discharging so as to pull the magnetic induction intensity of the magnetic core to a reverse residual magnetism state. According to the invention, by adopting a mechanism of cooperation of magnetic switch delay buffering and reverse demagnetization presetting, while a conventional thyristor is protected from initial high di / dt impact, the inherent current rise rate limitation of a device is broken through, rapid-response large-current pulse output is realized, and the comprehensive cost is reduced.

A semiconductor controlled rectifier is provided. The rectifier includes an anode, a cathode, and a well including a first contact and a second contact. The anode is positioned between the first and second contacts, the first contact is arranged to provide a first current flow path from the first contact to the cathode via the anode, and the second contact is arranged to provide a second current flow path from the second contact to the cathode via the anode.

Embodiments disclosed herein include a thermal testing unit. In an embodiment, the thermal testing unit comprises a nozzle frame, and a nozzle plate within the frame. In an embodiment, the nozzle plate comprises a plurality of orifices through a thickness of the nozzle plate. In an embodiment, the thermal testing unit further comprises a housing attached to the nozzle plate.

The invention relates to a lossless high-frequency isolation pulse driving method for a thyristor switch, and belongs to the technical field of power electronic device driving control. According to the method, a voltage type pulse signal is converted into a high-frequency pulse current through a high-frequency isolation transformer, the high-frequency pulse current is controlled to have the rising characteristic of a steep front edge, and a driving current rapidly reaches a peak value in an initial stage and then drops to a platform value so as to maintain conduction of a thyristor; a pulse width modulation signal is used for controlling and driving a switch tube to be switched on and switched off, and pulse current output is adjusted; and during turn-off, magnetic reset of the high-frequency isolation transformer is realized through a complex magnetic loop, and magnetic saturation and voltage spike are avoided. According to the invention, the reliability and stability of thyristor triggering are improved, and the device has the technical advantages of good isolation, fast current response speed and strong anti-interference capability.

A power conversion system including: a first self-commutated converter connected between a first AC power system, and a first DC main line and a DC return line for first high voltage DC transmission; a second self-commutated converter connected between the first AC power system, and the DC return line and a second DC main line for second high voltage DC transmission; and a control device, wherein when detecting a single or double line to ground fault inside the second self-commutated converter and detecting an occurrence of a missed zero crossing in a non-faulted phase of the first AC power system, the control device causes the first self-commutated converter to output a DC component for eliminating the missed zero crossing to the first AC power system, and then opens an AC circuit breaker in order to separate the second self-commutated converter from the first AC power system.

An electrostatic discharge protection device and an electrostatic discharge protection circuit are provided. The electrostatic discharge protection device includes first to fifth well regions, first to fifth P-type doped regions, and first and second N-type doped regions. The first to fifth P-type doped regions and the first and second N-type doped regions are disposed in the first to fifth well regions and the fourth and fifth well regions disposed on a deep N-type well region in a P-type semiconductor substrate. The conductivity types of the first, third and fourth well regions are P-type. The conductivity types of the second and fifth well regions are N-type. The second and fifth P-type doped regions and the second N-type doped region are electrically connected to the first power pad. The first, third and fourth P-type doped regions and the first N-type doped region are electrically connected to the second power pad.

The switching device (1) according to the invention comprises (i) a controller (8), (ii) a string (2) of main semiconductor switches (21 to 2N) connected in series, extending from a first main semiconductor switch (21) to a last main semiconductor switch (2N), each main semiconductor switch comprising a control terminal (G), and (iii) driver semiconductor switches (4), each of which is connected between the control terminals (G) of two successive main semiconductor switches of the string (2) so that a control signal coming from the controller (8) and provided at the control terminal (G) of only the first main semiconductor switch (21) puts the first main semiconductor switch (21) into a conducting state and then sequentially puts the other main semiconductor switches (22 to 2N) into a conducting state by sequentially putting the driver semiconductor switches (41 to 4N-1) into a conducting state, independently of whether a voltage is present across the string (2).

This disclosure provides a turn-off circuit, a drive circuit, an IGCT, an electrical device, and a turn-off method. The turn-off circuit is used for a gate-commutated thyristor, which includes a first lead, a second lead, and a control lead. The turn-off circuit includes a control device and a voltage regulation circuit. The control device is configured to output a control signal to the voltage regulation circuit. The voltage regulation circuit includes a control sub-circuit, a voltage-adjustable switching element, and a voltage source. A first terminal of the voltage-adjustable switching element is electrically connected to the control lead of the gate-commutated thyristor, a second terminal of the voltage-adjustable switching element is electrically connected to a first terminal of the voltage source, the control lead of the voltage-adjustable switching element is electrically connected to the control sub-circuit, and the second terminal of the voltage source is electrically connected to the first lead of the gate-commutated thyristor. The control sub-circuit is configured to control the voltage-adjustable switching element to be turned on or off, or to control the voltage-adjustable switching element to be clamped at a predetermined voltage, based on the control signal.

The invention relates to a circuit arrangement (1) for supplying direct current to a plurality of electrolysis rows connected in parallel (3a, 3b, 3c, 3d). The circuit arrangement (1) has a first supply branch (5) and a second supply branch (7) each having a three-phase transformer (9, 11). Two supply lines (13a, 13b) are guided out of a three-phase transformer (9, 11) on the secondary side, to each of which supply lines a rectifier (15a, 15b) is connected and therefore by means of a rectifier (15a, 15b) an input-side alternating current can be converted into an output-side direct current for supplying an electrolysis row (3a, 3b, 3c, 3d). A control device (17) is provided which is designed such that in the event of a standstill of one of the electrolysis rows (3a, 3b, 3c, 3d) in one of the supply branches (5, 7), an additional phase displacement (∆φ) can be applied to the output-side direct current of the other rectifier (15a, 15b) in this supply branch (5, 7), and therefore a phase adjustment is effected with one of the rectifiers (15a, 15b) in the other supply branch (5, 7). The invention further relates to a method for operating a circuit arrangement (1) and to an electrolysis system (21) having a circuit arrangement (1).

This application discloses a thyristor control method, apparatus, device, system, medium, and program product, relating to the field of trigger control technology for thyristor series structures. The thyristor control method is used in thyristor valve control equipment connected to the thyristor series structure. The method includes: determining the trigger delay duration corresponding to each thyristor in the thyristor series structure; determining the trigger time of each thyristor based on its reference trigger time and trigger delay duration; and controlling the corresponding thyristor to conduct at its trigger time. This application can delay the reference trigger time by using the trigger delay duration of each thyristor to achieve synchronous triggering of each thyristor in the thyristor series structure, thereby improving control reliability.

The present disclosure relates to a fully controllable, power semiconductor switching assembly (40), comprising a first unit (51, 61, 71) comprising a latching power semiconductor switching device (41) controlled by a first gate terminal (44), a second unit (52, 62, 72) comprising a non-latching power semiconductor switching device (42) controlled by a second gate terminal (45), and a power semiconductor diode (43). The latching power semiconductor switching device (41) and the non-latching power semiconductor switching device (42) are connected in a parallel configuration with respect to a current switched by the switching assembly (40 ). The power semiconductor diode (43) is connected in an antiparallel configuration with respect to the current switched by the switching assembly (40). The present disclosure further provides a power semiconductor device (100), a snubber-less power converter and a method for its manufacture.

This description relates to a control device (Driv131, Driv132) of a switch (130) comprising: - a first control circuit (Driv131) of said switch (130) referenced to a first terminal (N110) adapted to receive an alternating potential, formed on a first substrate, and comprising a first diode whose anode is connected to said first substrate; - a second control circuit (Driv132) referenced to a second terminal (GND100) adapted to receive a reference potential, formed on a second substrate, and comprising a second diode whose anode is connected to said second substrate; in which the cathode of said first diode is connected to said second control circuit (Driv132), and the cathode of said second diode is connected to said first control circuit (Driv131).

A hybrid switch circuit for coupling two circuit terminals together is disclosed. The hybrid switch circuit includes a set of bidirectional switch devices coupled between a first circuit terminal and a second circuit terminal. The hybrid switch circuit also includes a set of unidirectional switch devices that are also coupled between the first circuit terminal and the second circuit terminal. In some cases, the set of bidirectional switch devices may be implemented using bidirectional double-base bipolar junction transistors, while the set of unidirectional switch devices may be implemented using wide bandgap transistors. In response to a de-assertion of a switch signal, a control circuit may open the set of bidirectional switch devices and, after a period of time has elapsed, open the set of unidirectional switch devices.

This disclosure relates to a fully controllable power semiconductor switching assembly (40) comprising a first unit (51, 61, 71) having a latching power semiconductor switching device (41) controlled by a first gate terminal (44), a second unit (52, 62, 72) having a non-latching power semiconductor switching device (42) controlled by a second gate terminal (45), and a power semiconductor diode (43). The latching power semiconductor switching device (41) and the non-latching power semiconductor switching device (42) are connected in parallel with respect to the current switched by the switching assembly (40). The power semiconductor diode (43) is connected in antiparallel with respect to the current switched by the switching assembly (40). This disclosure further provides a power semiconductor device (100), a snubberless power converter, and a method for manufacturing the same.

The invention discloses a high-voltage and large-current light-operated solid-state switch assembly based on double isolation, which relates to the field of particle accelerators, pulse power and power electronics and comprises a synchronous trigger system, an isolation laser driving unit, a laser diode series group and a light-operated multi-gate thyristor. An initial external trigger signal is converted into multiple paths of nanosecond-level synchronous weak light trigger signals, the weak light trigger signals are transmitted to each isolation laser driving unit in a lossless mode, and after the isolation laser driving units receive the weak light trigger signals, energy amplification is conducted through internal high-speed power semiconductor switches, and electric pulses are output. An electric pulse is transmitted to the laser diode series connection group through the coaxial transmission line, the laser diode series connection group converts the electric pulse into a trigger light spot, the trigger light spot is matched with a light window of the light-operated multi-gate thyristor, light-electricity conversion is completed, the thyristors are driven to be conducted, and the static voltage-sharing and protection system is connected to the two ends of each light-operated multi-gate thyristor in parallel.