159results about "Thyristor" patented technology

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

FinFET multi-diode thyristor switches for protecting high data rate communication system interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and / or reduces total on-state resistance.

Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and / or reduces total on-state resistance.

An energy conversion arrangement 100 for an electrolysis system 150 comprises an adjustable transformer 101 having a primary-side 102 connectable to an AC power-grid 103 via a point-of-common-coupling, a secondary-side 104, and a tap-changer 105, rectifier transformers 106,107 having primary-sides 108,109 configured to provide secondary-side voltages differing by pre-defined phase-shifts, thyristor rectifier units 114,115,116,117 forming a multipulse rectifier system 118 receiving the secondary-side voltages and providing DC current to electrolyser units 119,120,121,122, and a protection controller unit 133 for connecting / disconnecting the arrangement to / from the grid depending on comparisons of secondary-side voltages with corresponding secondary-side threshold voltages, wherein the multipulse rectifier system comprises synchronization control circuits 123,124,125,126 providing thyristor gate-pulses at firing angles synchronized with the secondary-side voltages, and wherein the corresponding secondary-side threshold voltages are determined by a nominal threshold-voltage in accordance with a grid code at the point-of-common-coupling and physical transformer parameters, adjusted depending on tap-changer position information 129.

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: —a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); —a nonlinear inductor (27) serially coupled between the output of the voltage selector (26); —a gate control unit (23) configured to control the voltage selector (26) to control switching of the gate commutated thyristor (21) in its turn-on state comprising a turn-on pulse generation, a positive-gate-voltage backporch operation, a negative-gate-voltage backporch operation and a retrigger pulse generation; wherein the nonlinear inductor (27) has a nonlinearity to have a high inductance during any of the backporch operations and to have a low inductance during the turn-on pulse generation and retrigger pulse generation.

The invention relates to an energy conversion arrangement (100) for an electrolysis system (150). It comprises an adjustable transformer (101) having a primary-side (102) connectable to a power-grid (103), and a secondary-side (104), a sensor device (105) sensing an alternating primary-side voltage at the adjustable transformer, rectifier-transformers (106,107) having primary- sides (108,109) connected to the adjustable transformer secondary-side and providing on their secondary-sides (110,111,112,113) alternating secondary-side voltages differing by pre-defined phase-shifts, and thyristor-rectifier units (114,115,116,117) forming a multipulse-rectifier-system (118) that receives the secondary-side voltages and provides DC- current to electrolyser units (119,120,121,122). The multipulse-rectifier-system comprises synchronization control circuits (123,124,125,126) providing thyristor-gate pulses to the thyristor-rectifier units at firing angles synchronized with synchronization-voltage signals (130) differing by the pre-defined phase-shifts and changed depending on electrolyser DC-current requests, wherein before application of the pre- defined phase-shifts, the synchronization-voltage signals (130) directly correspond to the alternating primary-side voltage sensed at the adjustable transformer primary-side (102).

The invention discloses an RC-IGCT-based superconducting hybrid DC circuit breaker, and relates to the topological structure and working principle analysis of DC circuit breakers. The circuit topology comprises two parts: (1) a resistance-type superconducting fault current limiter R-SFCL and a UDS isolation switch adopting a TP KEMA arc model are connected in series, and (2) a current commutation component composed of diodes VD1-VD4, a current injection branch and a current commutation branch. VD1-VD4 are used for conducting bidirectional current; the current injection branch comprises a pre-charging capacitor C, an inductor L and a thyristor T which are connected in series; the current commutation branch circuit is formed by connecting a power electronic switch, an RCD buffer branch circuit and an energy absorption branch circuit in parallel, and the energy absorption branch circuit is composed of a metal oxide lightning arrester; the invention further discloses a current breaking method of the superconducting hybrid direct-current circuit breaker. According to the invention, quick switching-off can be realized after fault current occurs, the rise rate of the fault current is limited, and the loss and the cost are low under the normal through-current condition.

A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

A circuit includes a transistor configured to control pre-charging a charge storage device, and a diode coupled in parallel with the transistor. It also includes a shunt resistor coupled between the source of the transistor and a positive end of the charge storage device, an inductor coupled between the shunt resistor and the positive end of the charge storage device, and a current controller coupled to a gate of the transistor. The current controller is configured to receive a current measurement indicating an amount of current flowing through the transistor, process the current measurement to determine a switching duty cycle for the transistor, and to provide a signal to the gate of the transistor, the signal oscillating at the switching duty cycle. It also includes a power supply coupled with the source of the transistor and the drain of the transistor and configured to supply power to the current controller.

The present description concerns a circuit for converting from a first alternating voltage to a second voltage. The circuit includes: a first thyristor; a first control circuit of the first thyristor; a power factor correction circuit comprising a coil; and a first circuit configured to convert a third voltage into a fourth DC voltage. The third voltage corresponds to a difference between a potential at a first node connected to an output node of the coil and a reference potential. The fourth DC voltage is configured to supply the first control circuit of the first thyristor, and is referenced with respect to the same reference potential as the third voltage.

A circuit device includes a first low-potential-side power source terminal, a second low-potential-side power source terminal, a drive circuit, a switching control circuit, and a bidirectional thyristor for electrostatic protection. The drive circuit is coupled to the first low-potential-side power source terminal and drives a drive target with a switching operation. The switching control circuit is coupled to the second low-potential-side power source terminal and controls the switching operation of the drive circuit. One end of the bidirectional thyristor is coupled to the first low-potential-side power source terminal and another end of the bidirectional thyristor is coupled to the second low-potential-side power source terminal.

An energy conversion device 100 for an electrolysis system (150) comprises: an adjustable transformer (101) having a primary side (102) connectable to an AC grid (103) via a point of common coupling, a secondary side (104) and a tap switch (105); a rectifier transformer (106, 107) having a primary side (108, 109) configured to provide a secondary side voltage differing by a predetermined phase shift; a thyristor rectifier unit (114, 115, 116, 117) forming a multi-pulse rectifier system (118) that receives the secondary side voltage and provides a DC current to the electrolyser unit (119, 120, 121, 122); and a protection controller unit 133 for connecting / disconnecting the device to / from the power grid as a function of a comparison of the secondary-side voltage to a corresponding secondary-side threshold voltage, where the multi-pulse rectifier system comprises a synchronization control circuit (123, 124, 125, 126) providing thyristor gate pulses at an emission angle synchronized with the secondary-side voltage, and a protection controller unit 133 for connecting / disconnecting the device to / from the power grid as a function of a comparison of the secondary-side voltage to a corresponding secondary-side threshold voltage. And wherein the respective secondary-side threshold voltage is determined from a nominal threshold voltage specified by a grid guideline at the point of common coupling and a physical transformer parameter adjusted according to tap switch position information (129).

A power control device for power factor correction includes a rectifier rectifying an input current, a first switch and a second switch connected to an output of the rectifier to control a phase of the output of the rectifier, a first current sensor sensing a current through the first switch and a second current sensor sensing a current through the second switch, a low pass filter filtering the currents sensed by the first current sensor and the second current sensor, and at least one processor sampling the currents filtered by the low pass filter once per entire switching cycle of the first switch and the second switch and performing balancing control based on the sampled currents such that an average value of the current through the first switch and the current through the second switch is uniform for a certain period.

The invention provides a power supply circuit and electronic equipment, which are applied to the technical field of switching power supplies, the circuit comprises a controller, a power conversion circuit and an under-voltage protection circuit, a SiC MOSFET switching tube is arranged in the power conversion circuit, the under-voltage protection circuit detects the current driving voltage output by a first driving port of the controller, and the current driving voltage is output by a second driving port of the controller. The current driving voltage of the SiC MOSFET switch tube is smaller than the preset protection voltage, the first control signal is output to the configuration port of the controller when the current driving voltage of the SiC MOSFET switch tube is smaller than the preset protection voltage, the controller is triggered to turn off the SiC MOSFET switch tube, and as the preset protection voltage is larger than or equal to the rated minimum driving voltage of the SiC MOSFET switch tube, reliable turn-off of the SiC MOSFET switch tube can be effectively controlled, and the reliability of the SiC MOSFET switch tube is improved. And the safety and the reliability of the SiC MOSFET switch tube and the power supply circuit are improved.

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.

To provide an organic semiconductor ink that can achieve excellent photoelectric properties while using a solvent that is free from deleterious substances and halogens.SOLUTION: An organic semiconductor ink comprises: a p-type semiconductor compound, as a copolymer that comprises a repeat unit of a heterocyclic compound comprising a nitrogen atom and a repeat unit of a heterocyclic compound comprising a sulfur atom; an n-type semiconductor compound having an electron affinity of 3.5 eV or more; and an anisole derivative comprising a benzene ring with no direct bond with a halogen group.SELECTED DRAWING: Figure 1

An energy conversion arrangement 100 for an electrolysis system (150) comprises an adjustable transformer (101) having a primary-side (102) connectable to an AC power-grid (103) via a point-of-common-coupling, a secondary-side (104), and a tap-changer (105), rectifier transformers (106,107) having primary-sides (108,109) configured to provide secondary-side voltages differing by pre-defined phase-shifts, thyristor rectifier units (114,115,116,117) forming a multipulse rectifier system (118) receiving the secondary-side voltages and providing DC current to electrolyser units (119,120,121,122), and a protection controller unit 133 for connecting / disconnecting the arrangement to / from the grid depending on comparisons of secondary-side voltages with corresponding secondary-side threshold voltages, wherein the multipulse rectifier system comprises synchronization control circuits (123,124,125,126) providing thyristor gate-pulses at firing angles synchronized with the secondary-side voltages, and wherein the corresponding secondary-side threshold voltages are determined by a nominal threshold-voltage as specified by grid code at the point-of-common-coupling and physical transformer parameters, adjusted depending on tap-changer position information (129).

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); - a nonlinear inductor (27) serially coupled between the output of the voltage selector (26); - a gate control unit (23) configured to control the voltage selector (26) to control switching of the gate commutated thyristor (21) in its turn-on state comprising a turn-on pulse generation, a positive-gate-voltage backporch operation, a negative-gate-voltage backporch operation and a retrigger pulse generation; wherein the nonlinear inductor (27) has a nonlinearity to have a high inductance during any of the backporch operations and to have a low inductance during the turn-on pulse generation and retrigger pulse generation.

According to one embodiment, the semiconductor device (100) comprises a semiconductor body (1) having a first side (10) and a second side (20) opposite the first side. The semiconductor device further comprises a first thyristor structure (I) and a second thyristor structure (II). The second thyristor structure is arranged laterally beside the first thyristor structure. Each of the first thyristor structure and the second thyristor structure comprises a first base region (11a, 11b) on the first side and a gate electrode (1a, 1b) on the first side adjacent to the assigned first base region. The first base regions of the two thyristor structures are regions of the semiconductor body and are of the same conductivity type. The gate electrodes of the thyristor structures are individually and singly electrically contactable.

The invention relates to a system (2) for converting a first voltage (U1) into a second voltage (U2), comprising: a converter (4) provided with at least two input terminals (5), at least two output terminals (8), and at least one electronic switching branch (10), the or each branch (10) comprising two switching half-branches (16) connected in series to an intermediate terminal (8), the at least one half-branch (16) comprises at least one switching member (19), the or each switching member (19) comprising a controllable electronic switch (20); and means (6) for controlling the or each electronic switch (20) of the or each branch (10); the converter (4) further comprises, for the or each electronic switch (20), a passive voltage limiting component (12) connected to said electronic switch (20), thermally coupled to said electronic switch (20) and having a negative temperature coefficient.

Disclosed herein is a static transfer switch and methods of operating the same. The static transfer switch includes a first switch between a first voltage source and a load, and a second switch between a second voltage source and the load. The first switch and the second switch are configured to alternate power to the load between the first voltage source or the second voltage source. The static transfer switch also includes a first parallel circuit branch coupled in parallel to the first switch, the first parallel circuit branch comprising a first passive element and a first auxiliary switch.

The present disclosure relates to a fully controllable power semiconductor switch assembly (40) comprising: a first cell (51, 61, 71) comprising a latch-type power semiconductor switching device (41) controlled by a first gate terminal (44); a second unit (52, 62, 72) comprising an unlatched power semiconductor switching device (42) controlled by a second gate terminal (45); and a power semiconductor diode (43). The latch-type power semiconductor switching device (41) and the non-latch-type power semiconductor switching device (42) are connected in a parallel configuration with respect to the current switched by the switching assembly (40). The power semiconductor diodes (43) are connected in an anti-parallel configuration with respect to the current switched by the switching assembly (40). The present disclosure also provides a power semiconductor device (100), a snubber-free power converter, and a method for manufacturing a snubber-free power converter.

Embodiments of the present disclosure relate to a method, apparatus for operating a conduction assembly, a start device, and a computer-readable medium. The conduction assembly is coupled between an AC power supply and an inductive load, and comprises a first switch device and a second switch device which are in anti-series connection, the first switch device comprises a first body diode in anti-parallel connection with the first switch device, and the second switch device comprises a second body diode in anti-parallel connection with the second switch device. The method comprises: conducting the conduction assembly at a first conduction angle in a first cycle; conducting the conduction assembly in a second cycle at a second conduction angle that is greater than the first conduction angle, wherein in the first cycle and second cycle, a turn-off timing of the first switch device or the second switch device in anti-parallel connection with the first body diode or second body diode having a conduction direction the same as a current direction is determined based on the current flowing through the conduction assembly. The method proposed here may reduce the power loss of the soft start circuit.

There is provided a thyristor with desensitized gate sensitivity. The invention includes: a first P-type semiconductor layer; a first N-type semiconductor layer disposed in contact with the first P-type semiconductor layer; a second P-type semiconductor layer disposed in contact with the first N-type semiconductor layer; a second N-type semiconductor layer disposed in contact with the second P-type semiconductor layer; a third P-type semiconductor layer that is disposed in contact with the second P-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer; a gate electrode; a cathode electrode; and a fourth P-type semiconductor layer that is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer. The third P-type semiconductor layer and the fourth P-type semiconductor layer are separated from each other by the second P-type semiconductor layer, and the third P-type semiconductor layer and the second N-type semiconductor layer are separated from each other by the second P-type semiconductor layer.

A method of operating a silicon controlled rectifier (SCR) is provided. The method may include coupling the SCR to receive an AC voltage signal between an anode and a cathode of the SCR. The method may further include applying a gate current between a gate of the SCR and the cathode, when the AC voltage signal has a first phase angle, corresponding to a first voltage polarity, wherein the SCR switches from an OFF state to an ON state. The method may also include, at a second phase angle of the AC voltage signal, corresponding to a zero voltage cross of the AC voltage signal or to a second voltage polarity, turning off the gate current between the gate and the cathode.

A power control device for power factor correction includes a rectifier rectifying an input current, a first switch and a second switch connected to an output of the rectifier to control a phase of the output of the rectifier, a first current sensor sensing a current through the first switch and a second current sensor sensing a current through the second switch, a low pass filter filtering the currents sensed by the first current sensor and the second current sensor, and at least one processor sampling the currents filtered by the low pass filter once per entire switching cycle of the first switch and the second switch and performing balancing control based on the sampled currents such that an average value of the current through the first switch and the current through the second switch is uniform for a certain period.

A semiconductor package includes at least a first die. The first die includes an internal circuit disposed on a substrate, an electrostatic discharge (ESD) protection circuit disposed on the substrate but laterally spaced from the internal circuit and including a first charge dissipation element, and a first Silicon Controlled Rectifier (SCR) laterally adjacent to and spaced from the first charge dissipation element.

The present disclosure provides an electronic device for driving a switch. An example electronic device for driving a switch includes: a first d driving circuit of the switch referenced to the first terminal adapted receive an alternating potential, formed on a first substrate, and comprising a first diode whose cathode is connected to the first substrate; a second driving circuit referenced to the second terminal adapted to receive a reference potential, formed on a second substrate, and comprising a second diode whose cathode is connected to the second substrate; and an anode of the first diode is connected to the second driving circuit, and an anode of the second diode is connected to the first driving circuit.

The invention discloses a quick response thyristor switching circuit with power-on false trigger protection. The quick response thyristor switching circuit comprises a system power supply, a thyristor and a load, a system power supply is connected with the anode of the thyristor, a control signal is connected with the control electrode of the thyristor through a resistor, and the cathode of the thyristor is connected with a load; the system is characterized in that a time-delay power-on circuit is arranged between the anode of the thyristor and the system power supply, the system power supply supplies power to the time-delay power-on circuit, the time-delay power-on circuit is used for delaying the time when a system power-on signal reaches the thyristor, and the delay time is longer than the duration of peak pulses generated by the front end of a control electrode of the thyristor when the system is powered on. Therefore, the thyristor is powered on after the pre-stage power-on spike pulse disappears. According to the invention, the problem of power-on misconduction can be solved under the condition that the response time of the thyristor switch is not reduced.

The invention discloses silicon controlled rectifier operation in a continuous current mode. A method of operating a silicon controlled rectifier (SCR) is provided. The method may include coupling the SCR to receive an AC voltage signal between an anode and a cathode of the SCR. The method may also include applying a gate current between a gate and a cathode of the SCR when the AC voltage signal has a first phase angle corresponding to the first voltage polarity, where the SCR switches from an OFF state to an ON state. The method may also include turning off a gate current between the gate and the cathode at a second phase angle of the AC voltage signal corresponding to a zero voltage cross of the AC voltage signal or corresponding to a second voltage polarity.