4 results about "Thyratron" patented technology

This invention discloses an N-type silicon carbide-based reverse-blocking double-ended solid-state thyristor and its preparation method. The N-type silicon carbide-based reverse-blocking double-ended solid-state thyristor comprises: N + Silicon carbide substrate, and sequentially N + Silicon carbide P epitaxially grown on a silicon carbide substrate + Anode emitter region, silicon carbide N ‑ The drift region and the region composed of silicon carbide P-based region and silicon carbide N-based region + The cathode emission region is composed of [a specific region / area]. The structure of the cathode emission region is formed in the following manner: [the structure is formed in the silicon carbide N-type ... + Zone P + The injection window is then used for P-type ion implantation to make the P + Silicon carbide cathode P is formed within the injection window. + The present invention, by limiting the specifications of the size and doping concentration of the N-based region and through extensive testing and verification, can, on the one hand, more easily achieve a high blocking voltage, thereby effectively avoiding reliability problems caused by series connection; on the other hand, it helps to reduce the thickness of the device, thereby improving the on-state characteristics of the device.

This invention provides a reverse-blocking double-ended solid-state thyristor, its triggering circuit, and its fabrication method, belonging to the field of thyristors, which includes an N-type anode. + Silicon carbide emitter, sequentially composed of N + Silicon carbide P obtained by epitaxial growth on silicon carbide emitter ‑ Drift region, silicon carbide N drift region, silicon carbide P + Emitter and silicon carbide N + Emitter region, silicon carbide P + Emitter and silicon carbide N + The emission regions are located on different planes but are parallel to each other, and they are alternately connected to form a continuous square concave-convex surface. (Silicon carbide P) + Emitter and silicon carbide N + The emitting region is used as the cathode. This invention also provides a method for fabricating a reverse-blocking double-ended solid-state thyristor and its triggering circuit. The thyristor device of this invention has high voltage blocking capability, high turn-on rate, and high current rise rate (di / dt) capability, while its structure is more miniaturized. The triggering circuit of the reverse-blocking double-ended solid-state thyristor of this invention is suitable for use with a negative high-voltage triggering method.

The application provides a hydrogen thyratron intelligent heating control method, device, equipment and storage medium, and relates to the controllable nuclear fusion technical field.The method comprises the following steps: firstly, real-time temperature data of the hydrogen thyratron is acquired and is converted into representative temperature voltage data;secondly, optimal voltage data corresponding to optimal working temperature is preset, and closed-loop control voltage data is determined based on the representative temperature voltage data and the optimal voltage data;thirdly, real-time voltage data of the hydrogen thyratron is acquired, preset heating initial voltage data is combined with the closed-loop control voltage data, the real-time voltage data and the heating initial voltage data to determine closed-loop output current data;finally, real-time current data of the hydrogen thyratron is acquired, a control signal is determined based on the closed-loop output current data and the real-time current data, and the heating power voltage is adjusted through the control signal, so that stable control of the optimal working temperature of the hydrogen thyratron is realized.

This invention discloses a stepped cathode-emitter reverse blocking double-ended solid-state thyristor and its fabrication method. The double-ended solid-state thyristor has a four-layer PNPN structure, with Al electrodes on both the cathode and anode sides; the N on the cathode side... + The emitter has a stepped structure with n steps. Along the direction from the first step to the nth step, the junction depth increases with each step, and the concentration gradually decreases at the deeper junction. The emitter P on the anode side... + Doping concentration of 1×10 14 cm ‑3 ~1×10 21 cm ‑3 The depth is 35μm to 100μm, and there are tens of thousands of short-circuit points with diameters of 200μm to 300μm on the cathode side; when n is 3, the doping concentration of the first step is 1×10. 19 cm ‑3 ~1×10 21 cm ‑3 The junction depth is 12μm to 20μm, and the doping concentration of the second-stage step is 1×10⁻⁶. 17 cm ‑3 ~1×10 21 cm ‑3 Its junction depth is 17μm to 25μm, and the doping concentration of the third step is 8×10⁻⁶. 16 cm ‑3 ~1×10 21 cm ‑3 The junction depth is 21μm to 29μm. The stepped cathode-emitter RBDT increases the voltage drop at the nth step cathode by diffusing the cathode-emitter n times. This increases the turn-on area of ​​the RBDT chip under the same dv / dt trigger pulse, thereby increasing the di / dt withstand capability of the RBDT chip.