10 results about "Thyratron" patented technology

The invention provides an intelligent heating control method, device and equipment for a hydrogen thyratron and a storage medium, and relates to the technical field of controllable nuclear fusion, and the method comprises the steps: firstly, obtaining the real-time temperature data of the hydrogen thyratron, and converting the real-time temperature data into representative temperature and voltage data; secondly, presetting optimal voltage data corresponding to the optimal working temperature, and determining closed-loop control voltage data based on the representative temperature voltage data and the optimal voltage data; thirdly, acquiring real-time voltage data of the hydrogen thyratron, presetting heating initial voltage data, and determining closed-loop output current data by combining the closed-loop control voltage data, the real-time voltage data and the heating initial voltage data; and finally, acquiring real-time current data of the hydrogen thyratron, determining a control signal based on the closed-loop output current data and the real-time current data, and adjusting the voltage of the heating power supply through the control signal to realize stable control of the optimal working temperature of the hydrogen thyratron.

This invention discloses an N-type silicon carbide-based reverse-blocking double-ended solid-state thyristor and its preparation method. The N-type silicon carbide-based reverse-blocking double-ended solid-state thyristor comprises: N + Silicon carbide substrate, and sequentially N + Silicon carbide P epitaxially grown on a silicon carbide substrate + Anode emitter region, silicon carbide N ‑ The drift region and the region composed of silicon carbide P-based region and silicon carbide N-based region + The cathode emission region is composed of [a specific region / area]. The structure of the cathode emission region is formed in the following manner: [the structure is formed in the silicon carbide N-type ... + Zone P + The injection window is then used for P-type ion implantation to make the P + Silicon carbide cathode P is formed within the injection window. + The present invention, by limiting the specifications of the size and doping concentration of the N-based region and through extensive testing and verification, can, on the one hand, more easily achieve a high blocking voltage, thereby effectively avoiding reliability problems caused by series connection; on the other hand, it helps to reduce the thickness of the device, thereby improving the on-state characteristics of the device.

This invention provides a reverse-blocking double-ended solid-state thyristor, its triggering circuit, and its fabrication method, belonging to the field of thyristors, which includes an N-type anode. + Silicon carbide emitter, sequentially composed of N + Silicon carbide P obtained by epitaxial growth on silicon carbide emitter ‑ Drift region, silicon carbide N drift region, silicon carbide P + Emitter and silicon carbide N + Emitter region, silicon carbide P + Emitter and silicon carbide N + The emission regions are located on different planes but are parallel to each other, and they are alternately connected to form a continuous square concave-convex surface. (Silicon carbide P) + Emitter and silicon carbide N + The emitting region is used as the cathode. This invention also provides a method for fabricating a reverse-blocking double-ended solid-state thyristor and its triggering circuit. The thyristor device of this invention has high voltage blocking capability, high turn-on rate, and high current rise rate (di / dt) capability, while its structure is more miniaturized. The triggering circuit of the reverse-blocking double-ended solid-state thyristor of this invention is suitable for use with a negative high-voltage triggering method.

The invention discloses a minority carrier lifetime detection method, and relates to the technical field of semiconductor detection, and the method comprises the following steps: S1, preparing a test sample; s2, modulating an obtained photoconductive signal on a 10-10.5 GHz high-frequency carrier wave through capacitive coupling between a sample and an electrode; s3, taking out the photoconductive signal; s4, loading two ends of the sample with a high-frequency power supply of 25-35MHz; s5, irradiating the sample with laser with the wavelength of 904 nm to modulate high-frequency signals at the two ends of the sample; s6, after 3-5 min, illumination is stopped; s7, increasing a photoconductive attenuation signal; and S8, measuring the minority carrier lifetime of the sample through the attenuation curve. According to the method, in order to improve the test effect, a photoconduction signal is increased between a sample and an electrode, so that the detection accuracy of the method is improved, xenon lamps are used as light sources in optical systems of the method and a direct-current photoconduction recession method, but a cold cathode thyratron is used for gate control, and the detection accuracy of the method can be further improved.

The application provides a hydrogen thyratron intelligent heating control method, device, equipment and storage medium, and relates to the controllable nuclear fusion technical field.The method comprises the following steps: firstly, real-time temperature data of the hydrogen thyratron is acquired and is converted into representative temperature voltage data;secondly, optimal voltage data corresponding to optimal working temperature is preset, and closed-loop control voltage data is determined based on the representative temperature voltage data and the optimal voltage data;thirdly, real-time voltage data of the hydrogen thyratron is acquired, preset heating initial voltage data is combined with the closed-loop control voltage data, the real-time voltage data and the heating initial voltage data to determine closed-loop output current data;finally, real-time current data of the hydrogen thyratron is acquired, a control signal is determined based on the closed-loop output current data and the real-time current data, and the heating power voltage is adjusted through the control signal, so that stable control of the optimal working temperature of the hydrogen thyratron is realized.

The invention relates to a fluxgate current sensor (30), comprising: - a first magnetic core (34) and a first excitation winding (45), a second magnetic core (35) and a second excitation winding (46); - excitation components (37) designed to produce a first excitation voltage (Ve1) and apply it to the first excitation winding, and to produce a second excitation voltage (Ve2) and apply it to the second excitation winding, the first excitation voltage and the second excitation voltage being voltages that are identical but in phase opposition; - measurement components (38) designed to produce an output voltage (Vs) representative of the target current from a first measurement voltage (Vm1) and a second measurement voltage (Vm2).

The present application relates to the technical field of gas laser, in particular to a kind of adjustable corona drive creeping spark preionization structure for gas laser.It includes main discharge part and preionization part;Main discharge part and preionization part share high voltage source and thyratron switch;Preionization part includes surface discharge unit by electrically conductive metal ring, ceramic tube and ground electrode, and adjustable capacitor Cs1 in series in preionization discharge branch;Preionization discharge branch is parallel with main discharge loop and energy storage is independent of each other.In the present application, by constructing independent preionization discharge branch, introducing adjustable capacitor as core control element and realizing electrification continuous regulation, effectively solve the problems such as low regulation accuracy, poor dynamic response and limited system integration reliability caused by relying on mechanical spacing adjustment in traditional structure.

This invention discloses a stepped cathode-emitter reverse blocking double-ended solid-state thyristor and its fabrication method. The double-ended solid-state thyristor has a four-layer PNPN structure, with Al electrodes on both the cathode and anode sides; the N on the cathode side... + The emitter has a stepped structure with n steps. Along the direction from the first step to the nth step, the junction depth increases with each step, and the concentration gradually decreases at the deeper junction. The emitter P on the anode side... + Doping concentration of 1×10 14 cm ‑3 ~1×10 21 cm ‑3 The depth is 35μm to 100μm, and there are tens of thousands of short-circuit points with diameters of 200μm to 300μm on the cathode side; when n is 3, the doping concentration of the first step is 1×10. 19 cm ‑3 ~1×10 21 cm ‑3 The junction depth is 12μm to 20μm, and the doping concentration of the second-stage step is 1×10⁻⁶. 17 cm ‑3 ~1×10 21 cm ‑3 Its junction depth is 17μm to 25μm, and the doping concentration of the third step is 8×10⁻⁶. 16 cm ‑3 ~1×10 21 cm ‑3 The junction depth is 21μm to 29μm. The stepped cathode-emitter RBDT increases the voltage drop at the nth step cathode by diffusing the cathode-emitter n times. This increases the turn-on area of ​​the RBDT chip under the same dv / dt trigger pulse, thereby increasing the di / dt withstand capability of the RBDT chip.

The invention discloses an improved bipolar pulse generating device for transformer fault diagnosis. The improved bipolar pulse generating device comprises multi-path configurable pulse signal output realized by an FPGA, a magnetic isolation driving circuit, stray inductance measured by a double-pulse test method and an adjustable RC network. According to the device, the influence of stray inductance is suppressed through the RC network, the output waveform is optimized, and high-precision sequential control and high-sensitivity fault detection are realized. Compared with the prior art, such as a pulse generator based on a Marx circuit or a hydrogen thyratron, waveform distortion is effectively reduced, parameter adaptability is improved, and the pulse generator is suitable for different transformer loads. By means of the design, the sensitivity and accuracy of transformer winding fault detection are improved, the adaptability of the device to transformers of different models is enhanced, and an efficient and reliable solution is provided for power equipment state monitoring.

The utility model discloses a silicon thyratron, which relates to the technical field of silicon thyratrons, and comprises a silicon thyratron body, the top of the silicon thyratron is fixedly connected with a clamping bolt, the top of the silicon thyratron body is provided with an insertion port, and the upper end of the insertion port is movably connected with a protection assembly. The upper end of the silicon thyratron body is provided with a side heat conduction block, the top of the side heat conduction block is provided with a heat conduction plate, and the left side and the right side of the silicon thyratron body can be subjected to heat conduction through the heat conduction plate and the side heat conduction block. When the heat dissipation fan is started, air flow is generated from the interior of the ventilation notches through the heat exchange ventilation holes, so that the air-cooling heat dissipation effect is achieved, and then air flow exhausted through the side exhaust outlets directly blows the surfaces of the heat dissipation fins around the heat conduction substrate. Flowing airflow is matched with the air outlets formed in the surfaces of the heat dissipation fins to conduct heat conduction and heat dissipation treatment on the silicon thyristor, the heat dissipation effect is improved, and the service life is prolonged.