630 results about "Insulated-gate bipolar transistor" patented technology

The invention relates to the field of crystal preparation, in particular to a production device and a preparation method of monocrystalline silicon, the monocrystalline silicon and an insulated gate bipolar transistor. The apparatus for producing monocrystalline silicon comprises: a crucible for placing and melting a raw material; the heating module is arranged around the crucible and comprises a fixed heater at the upper part and a movable heater at the lower part, and the movable heater moves along the lifting direction of the crystal bar so as to accurately control the crystal growth temperature gradient and the oxygen diffusion transmission mode at different stages of crystal growth; and the magnetic field module is used for applying an asymmetric hook-shaped magnetic field in the crystal growth process so as to inhibit convection of raw materials in the crucible, reduce the oxygen concentration and improve the radial uniformity of oxygen. According to the technical scheme, on the basis of 300mm N-type monocrystalline silicon, under low oxygen (lt; 5ppma), ROGlt; and on the basis of 10%, the target of low potential type defect density can also be achieved, so that the high-quality requirements, including ultralow oxygen content, low defect density and the like, of an IGBT (Insulated Gate Bipolar Translator) on a silicon single crystal substrate are met. The efficient preparation of the ultralow-oxygen N-type silicon single crystal is realized by combining a heater with a novel structure with a CUSP magnetic field technology and matching with crystal pulling process parameter optimization. According to the silicon single crystal prepared by the method, the performance and the reliability of an IGBT (Insulated Gate Bipolar Translator) can be remarkably improved, the production cost is reduced, and the requirements of modern power electronic devices on high-performance silicon-based materials are met.

The utility model provides an insulated gate bipolar transistor driving circuit with adjustable positive and negative voltages, comprising a magnetic isolation module, the input end of which is connected with a driving signal and outputs an isolation driving signal; the input end of the first voltage regulating module is connected with the first positive voltage and outputs a second positive voltage within a first preset range; the input end of the second voltage regulating module is connected with the first negative voltage and outputs a second negative voltage within a second preset range; the push-pull output module is connected between the second positive voltage and the second negative voltage, the control end of the push-pull output module is connected with an isolation driving signal, and the output end of the push-pull output module is connected with the gate pole of the to-be-tested insulated gate bipolar transistor through a gate resistor; and the protection module is controllably connected between the output end of the push-pull output module and the second voltage regulation module under the action of the control signal. The driving circuit has the beneficial effects that the positive and negative voltage output capability can be flexibly adjusted according to debugging requirements, the working condition requirements of different clients are met, and the flexibility and adaptability of the driving circuit are improved.

A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

Gate control of power semiconductor devices using reduced gate drivers is disclosed. A circuit breaker may include a multitude of transistors, such as insulated gate bipolar transistors (IGBTs), connected in series with one another. Each transistor may be connected to a respective gate resistor. Diodes may be connected between various gate resistors. One or more resistor-capacitor (RC) snubber circuits may be provided in parallel with one or more of the transistors. Likewise, one or more metal-oxide varistors (MOVs) may be connected in parallel to one or more of the transistors. A gate driver (e.g., a single gate drive) may be connected to the one or more diodes and an emitter of at least one of transistors.

The invention provides a self-adaptive pressure tool test system suitable for insulated gate bipolar transistor (IGBT) insulation voltage resistance. The system comprises a hardware structure, the hardware structure comprises an upper quick-change jig and a lower quick-change jig which are used for fixing and positioning a tested module, the position of the module is ensured to be accurate and stable in the testing process through an indexing pin and a spring mechanism, a servo electric cylinder is used for driving an electric cylinder push plate, and the servo electric cylinder is used for driving the electric cylinder push plate. Accurate displacement of the upper quick-change jig is achieved, and displacement control of the servo electric cylinder is based on an optimized displacement formula. The adaptive pressure tool test system suitable for IGBT insulation and voltage withstanding has adaptive pressure adjustment and dynamic compensation capabilities, can effectively solve the problem of test errors caused by external factors in a traditional test system, and improves the test efficiency. Multi-element feedback of a servo electric cylinder, a pressure sensor, a temperature sensor and a vibration sensor is combined.

The invention discloses a PTC power control method for IGBT (Insulated Gate Bipolar Transistor) staggered frequency starting and related equipment, and relates to the field of automobile heating, the method comprises the following steps: acquiring a target power value under the condition that a power request signal is received; based on the target power value, calculating to obtain an average starting duty ratio of the plurality of power control units; generating a first control signal corresponding to each power control unit based on the average opening duty ratio; according to the first control signal, controlling each power control unit to be switched on in an error frequency manner; when it is detected that the power difference value between the actual output power of each power control unit and the target power value exceeds a preset deviation threshold value, the starting duration of each power control unit is adjusted, and a second control signal is obtained; and controlling each power control unit based on the second control signal until the power difference value does not exceed the preset deviation threshold value. By implementing the method, the heating performance of the power control unit in automobile heating can be improved.

The invention relates to the technical field of circuit breakers, and discloses a fast-to-install primary and secondary fusion pole-mounted circuit breaker which comprises an installation frame and a circuit breaker body arranged on the installation frame, and core power electronic components such as an insulated gate bipolar transistor (IGBT) chip and a module are integrated in the pole-mounted circuit breaker body. The mounting rack is used for mounting a circuit breaker body to realize the functions of automatically cutting off a circuit and remote communication when a fault occurs, the mounting rack comprises a clamping assembly and a supporting piece, the supporting piece is used for mounting the circuit breaker body, and the clamping assembly is used for fastening the supporting piece on a telegraph pole. According to the pole-mounted circuit breaker, assembling and wiring of the circuit breaker body are completed on the ground firstly, then the circuit breaker body is rapidly fixed to the telegraph pole through the installation frame, the effect of improving the installation efficiency and reliability of the pole-mounted circuit breaker is achieved, and meanwhile the use flexibility of the installation frame is high.

The utility model relates to the technical field of auxiliary tools, and discloses an IGBT module production auxiliary tool which comprises a tool lower layer block, a placement groove is formed in the tool lower layer block, a positioning clamping mechanism is arranged at the top of the tool lower layer block, and a lower layer replacement mechanism is arranged at the bottom of the tool lower layer block. The positioning and clamping mechanism comprises a positioning assembly and a clamping assembly, and the clamping assembly is arranged at the top of the positioning assembly. According to the IGBT module production auxiliary tool, through the arranged positioning clamping mechanism, in the use process, through the arranged positioning insertion column, the tool upper layer pressing plate and the tool lower layer block can be positioned so that rapid installation can be achieved, by means of the elastic force of a spring, when a clamping block makes contact with a clamping column, the clamping column can be clamped and fixed through the clamping block, and the clamping effect is good. Therefore, the upper layer pressing plate of the tool is fixed, the upper layer and the lower layer of the tool are quickly butted and fixed, and the butt joint convenience of the tool is improved.

The invention relates to an IGBT (Insulated Gate Bipolar Translator) device field-circuit joint simulation method considering stray capacitance electrothermal characteristics, which belongs to the technical field of power semiconductor device simulation modeling, and comprises the following steps: S1, constructing an IGBT circuit model in Simulink; s2, an IGBT electrothermal coupling multi-physical field model is constructed in the COMSOL; s3, defining the material attribute of each part, and defining the voltage and temperature sensitive characteristics of the parasitic capacitance of the IGBT chip; the influence of temperature change and voltage change on interelectrode capacitance is considered, and a capacitance calculation formula based on electrostatics is defined; s4, setting multiple physical fields and boundary conditions, selecting electric field and thermal field coupling modules, and setting electric field intensity and temperature initial boundary conditions; s5, field-circuit combination is carried out on the Simulink model and the COMSOL model; and S6, Simulink-COMSOL joint simulation is carried out, and the dynamic and static characteristics of the IGBT are obtained through the simulation model.

The invention provides a nine-level inverter topological structure and a modulation method thereof, the topological structure comprises a load end, and a first direct-current voltage source, a second direct-current voltage source and a third direct-current voltage source which are respectively connected with the load end, and the output voltage ratio among the first direct-current voltage source, the second direct-current voltage source and the third direct-current voltage source is 2: 1: 1. By configuring an insulated gate bipolar transistor and a power diode, the number of switching tubes is reduced, and the inverter is ensured not to have the problems of power backward flowing and instantaneous peak voltage, so that the power backward flowing phenomenon caused by the fact that the current of a high-voltage power unit reversely flows into a low-voltage power unit and the instantaneous peak voltage during inductive loading are avoided; the stability of circuit output power is ensured, the design is simplified, and a step wave and carrier wave laminated hybrid modulation method is used, so that the low switching loss of a high-voltage power unit and the excellent harmonic characteristic of the output voltage of the inverter are ensured.

The invention discloses a permanent magnet synchronous motor inverter nonlinear error compensation method, which comprises the following steps of: inputting an input capacitor of an insulated gate bipolar transistor (IGBT) and an output capacitor of the insulated gate bipolar transistor (IGBT) into a voltage error mathematical model; estimating a first coefficient, a second coefficient, a third coefficient and a fourth coefficient in the voltage error mathematical model by using an algorithm of a linear neural network; the first coefficient, the second coefficient, the third coefficient and the fourth coefficient in the voltage error mathematical model obtained through estimation are input into the voltage error mathematical model, and the nonlinear voltage error of the permanent magnet synchronous motor inverter is obtained through output of the voltage error mathematical model. According to the invention, the dead zone effect, the switch tube turn-on delay, the switch tube turn-off delay, the switch tube and diode turn-on voltage drop and the stray capacitance effect are comprehensively considered, an accurate voltage error mathematical model is established, and accurate voltage compensation can be realized.

The utility model discloses an IGBT (Insulated Gate Bipolar Transistor) protection circuit, which comprises a driving module, the input control end of the driving module is connected with the cathode of a Zener diode D0, and the cathode of the Zener diode D0 is also connected to the emitter E of an insulated gate bipolar transistor Q0. The grid electrode G of the insulated gate bipolar transistor Q0 is connected to the driving output end of the driving module through a resistor R6, and the collector electrode C of the insulated gate bipolar transistor Q0 is connected with the overcurrent detection output end of the driving module through a fast recovery diode FR107. According to the technical scheme, transient voltage spikes can be effectively restrained, the IGBT is protected against overvoltage damage, the anti-interference capacity of the circuit is enhanced, a fast recovery diode FR107 is further arranged at the overcurrent detection output end of the driving module, the switching speed can be increased, the overvoltage phenomenon during switching-off is reduced, the service life of the IGBT and the driving module is prolonged, and the service life of the IGBT and the driving module is prolonged. And the working reliability of the whole circuit is improved.

The invention provides a method and a device for identifying a second-class short circuit state of an insulated gate bipolar transistor (IGBT), and relates to the technical field of IGBT devices. The invention aims to timely and accurately judge whether the insulated gate bipolar transistor is in the second-class short circuit state or not. The method comprises the following steps: acquiring an emitter structure of an insulated gate bipolar transistor in a test circuit; if the emitter structure does not have the auxiliary emitter, acquiring a chip gate voltage, a gate side line parasitic inductance, a gate parasitic inductance, an emitter side line parasitic inductance, a common emitter parasitic inductance, a gate current, a collector current and a current from a gate to a collector in a gate driving loop; on the basis of the Kirchhoff's voltage law, grid voltage is determined through the collected parameter data; and if the grid voltage is within the preset short-circuit voltage range, determining that the insulated gate bipolar transistor has a second-class short circuit.

According to the control method and control system of the frequency conversion device and the air conditioner, under the condition that the temperature data exceeds the first temperature threshold value, the dead zone time and / or the minimum opening time of the frequency conversion device are / is dynamically adjusted, effective control over the temperature of the frequency conversion device is achieved, and the service life of the frequency conversion device is prolonged. The problem that the temperature of the frequency conversion device is not properly controlled in the prior art is solved. Specifically, the method can effectively reduce the switching frequency and continuous turn-on duration of switching devices such as an IGBT (Insulated Gate Bipolar Transistor) and the like in a mode of timely increasing the dead time and the minimum turn-on time, thereby reducing the calorific value of the switching devices, reducing the turn-on and turn-off loss, and avoiding performance reduction or device damage caused by overhigh temperature. Meanwhile, the control mode does not change the carrier frequency, so that the response speed and the control precision of the system are not influenced, the stable output power of the frequency conversion device is ensured under severe working conditions, and the reliability and the service life of equipment are improved.

The invention relates to the technical field of power transmission and distribution, and discloses a cable branch box convenient to maintain, an insulated gate bipolar transistor (IGBT) chip, a module and other core power electronic components are integrated in the cable branch box, the cable branch box comprises a box body, a switch device, a grounding device and a plurality of cables, and the switch device, the grounding device and the cables are arranged in the box body. A plurality of threading holes are formed in the distributor plate, the cables are arranged in the threading holes in a penetrating manner, wire numbers corresponding to the threading holes are arranged on the distributor plate, and the wire numbers correspond to wiring points on the switch device. According to the cable branch box, the cable is arranged in the threading hole in a penetrating manner, and the cable distributing plate slides up and down along with the box door and clamps or releases the cable when the box door is opened and closed, so that the effects of facilitating maintenance personnel to quickly identify the cable to be maintained and preventing the cable from being wound are achieved, the maintenance efficiency of the cable branch box is improved, and the risk of loosening of a cable joint is reduced.

The invention provides an IGBT life prediction method and device, equipment and a storage medium. The IGBT life prediction method comprises the steps of obtaining historical voltage parameters of an insulated gate bipolar transistor (IGBT) to construct a sample set; the voltage parameter is a voltage parameter related to the service life; constructing a BP neural network for predicting the service life of the IGBT; taking the initial weight and the bias parameter of the BP neural network as population individuals, taking a mean square error function of the BP neural network as a fitness function, and performing global search through a pelican optimization algorithm to obtain an initial optimal weight and a bias parameter; training a BP neural network based on the initial optimal weight, the bias parameter and the sample set, and iterating forward propagation and back propagation processes to obtain a trained BP neural network; and inputting a voltage parameter of an IGBT to be predicted into the trained BP neural network, and predicting the service life of the IGBT through the trained BP neural network. The method can improve the accuracy of IGBT life prediction.

The utility model discloses a metal plug-in bending and cutting all-in-one machine which comprises a back plate, an auxiliary mechanism comprises a vertical plate, a base plate, a square hole, a cutter, a first air cylinder, a second air cylinder and a round roller, the back face of the vertical plate is fixedly connected with the front face of the back plate, the square hole is machined in the inner side of the vertical plate, the base plate is fixedly connected to the outer side of the vertical plate, and the cutter is arranged on the base plate. A first air cylinder and a second air cylinder which are fixed to the front face of the back plate are arranged on the two sides of the vertical plate correspondingly, and the output end of the first air cylinder and the output end of the second air cylinder are fixedly connected with a cutter and a round roller correspondingly. The utility model relates to the technical field of insulated gate bipolar transistor related component production equipment, realizes the bending and cutting of a metal plug-in through the matching among the vertical plate, the square hole and the base plate, can carry out continuous operation, and solves the problems that the existing device cannot realize the continuous operation of bending and cutting, and the working time is prolonged in actual operation.

The invention relates to the technical field of power electronics, in particular to an IGBT (insulated gate bipolar transistor) module fault detection method and system based on harmonic sideband motion, which analyzes dynamic switching characteristics of a module, studies the influence of a bonding wire fault on an opening process, detects the fault through voltage harmonic change, and establishes a mapping relation between the bonding wire fault and conduction delay. A set of complete monitoring system is formed; the multi-chip IGBT module is simple in structure, easy to calibrate and realize during operation, and capable of efficiently identifying faults in the multi-chip IGBT module, thereby improving the operation reliability of the module, and effectively preventing system faults by timely finding potential problems through real-time monitoring; in future research, the method can be embedded into the power converter, and powerful theoretical and data support is provided for safe and reliable operation and state maintenance of the power converter.

The present application discloses a semiconductor device. The semiconductor device comprises: a base body; a drift layer; first trenches, wherein spaced trenches comprise two sub-trench portions spaced apart in a first direction, and the sub-trench portions comprise a plurality of gate trench groups and a plurality of dummy gate trenches; second trenches, wherein the second trenches are arranged between the two sub-trench portions at intervals in the first direction; first connecting trenches, wherein one of the two first connecting trenches connects the ends of one side of the plurality of second trenches in the first direction, the other one of the two first connecting trenches connects the ends of the other side of the plurality of second trenches in the first direction, and the first connecting trenches are connected to the ends of the dummy gate trenches adjacent to the second trenches; and second connecting trenches, wherein the second connecting trenches connect the ends of gate trenches among the gate trench groups adjacent to the second trenches. Therefore, an insulated gate bipolar transistor region and a fast recovery diode region can be prevented from interfering with each other in the process, respective performance of the two regions is ensured, and the current-carrying capacity of the semiconductor device can also be improved.

The invention provides a temperature detection method, a temperature detection device and temperature detection equipment of an insulated gate bipolar transistor and a computer storage medium. The temperature detection method comprises the following steps: acquiring a heating value of an insulated gate bipolar transistor by using a motor rotating speed and a motor torque; obtaining a first heat conductivity coefficient of each layer of the insulated gate bipolar transistor by using the size parameter of each layer of the insulated gate bipolar transistor; acquiring a second heat conductivity coefficient of the radiator and the cooling liquid by utilizing the water pump rotating speed; calculating a first heat conduction thermal resistance based on the first heat conduction coefficient, and calculating a second heat conduction thermal resistance based on the second heat conduction coefficient; constructing a thermal network of the insulated gate bipolar transistor; and solving the thermal network of the insulated gate bipolar transistor through the calorific value to obtain the real-time temperature of each layer of the insulated gate bipolar transistor. According to the temperature detection method, the temperature information of the insulated gate bipolar transistor is calculated by using the known parameter information, and temperature monitoring can be realized by canceling additional electronic elements such as a temperature sensor and the like.

The invention discloses an insulated gate bipolar transistor device and a preparation process thereof, and the device comprises a substrate, a drain electrode which is formed below the substrate, a dielectric layer which is formed above the substrate, a source electrode which is formed above the dielectric layer, and a plurality of grooves which are formed in the substrate in a downward etching and sinking manner and are independently arranged, independent trench gates are deposited in the trenches, the cross section of the plurality of trenches is of a circular or annular or polygonal closed structure, and the trench gates are insulated and isolated from the side walls of the trenches and the source electrodes through dielectric layers. The novel groove type IGBT structure is achieved through the groove gates arranged in a circular layout mode, the structure has the advantages of being high in channel density, large in current density, simple in process and the like, and the chip area and the cost can be reduced while the current capacity is kept; or the current density and the power density of the device are improved while the chip area is maintained, and the on-state loss is reduced.

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

The invention discloses a rapidly-switched-on insulated gate bipolar transistor and a preparation method thereof, and relates to the technical field of semiconductors, the rapidly-switched-on insulated gate bipolar transistor comprises a gate bonding pad, a gate current amplification unit, a gate bus and a cell, the input end of the gate bonding pad is connected with an external gate driving circuit, and the output end of the gate bonding pad is connected with an external gate driving circuit; the output end of the grid electrode bonding pad is connected with the input end of the grid electrode current amplification unit, the output end of the grid electrode current amplification unit is connected with the input end of the grid electrode bus, the output end of the grid electrode bus is connected with the grid electrode of the cell, and the grid electrode current amplification unit is used for amplifying the grid electrode current output by the grid electrode bonding pad and outputting the amplified grid electrode current. According to the invention, by adding the grid current amplification unit, the grid current can be amplified, and the amplified grid current is used for driving the cell, so that the grid voltage rise rate of the cell is improved, and the purpose of improving the opening speed of the cell in the insulated gate bipolar transistor is achieved.

The invention relates to the technical field of energy storage, in particular to a high-voltage direct-hanging type net-forming type energy storage system and a topological structure, and a PCS converter in the energy storage system comprises a plurality of sub-modules, each sub-module comprises an H-bridge circuit, and each H-bridge circuit is composed of four insulated gate bipolar transistors; at least one DC support capacitor and inductor connected to the DC side of the H-bridge circuit and used for smoothing DC voltage fluctuation; the bypass switch is connected to two ends of the H-bridge circuit in parallel and is used for isolating the sub-module when the sub-module fails; and the direct-current interface circuit is connected in parallel to two ends of the plurality of sub-modules and is used for adjusting input and output of voltage according to instructions issued by the control system. Therefore, the problems that in the prior art, basic over-current protection is relied on, the reliability is poor in the face of complex faults, the structure occupies a large space, and maintenance is inconvenient are solved.

The invention relates to the technical field of power distribution cabinets, in particular to a rainproof and moistureproof outdoor power cabinet which comprises a cabinet body, an exhaust pipe is arranged in the cabinet body in a communicating mode, outer magnets are arranged on the two sides of the exhaust pipe, a fixing plate is fixedly connected to the interior of the exhaust pipe, and a double-shaft motor is fixedly connected to the outer side wall of the fixing plate. Through the arrangement of a draft fan, a cylinder and other mechanisms, when the cabinet is used in normal weather, the whole double-shaft motor drives the draft fan to rotate, external dry air is sucked into the cabinet body, circulation of the air in the cabinet body is promoted, and therefore the interior of the cabinet body is dehumidified, and when the cabinet is used in rainy days, the whole cylinder is filled with a silica gel desiccant; according to the electrical element box provided by the utility model, the inside of the cabinet body is adsorbed and dehumidified, and the whole cabinet body can be effectively dehumidified under any condition by switching the two dehumidification modes, so that the use of an insulated gate bipolar transistor chip and other electrical elements in the electrical element box is ensured.

The utility model discloses an insulated gate bipolar transistor for inhibiting a self-opening effect, and relates to the technical field of semiconductors. The control grid is located at the top of the groove and mainly used for controlling opening of the groove, the shielding grid is located at the bottom of the groove and can reduce turn-off loss of the Miller capacitor during reverse turn-off, meanwhile, the shielding grid can be used for the charge balance effect between the grooves, an electric field can be adjusted during reverse turn-off, depletion is achieved, and the requirement for reverse voltage resistance is met. Compared with a traditional device cellular structure, a shielding grid and a control grid are introduced to be integrated in the same groove, and the cellular density is effectively improved. And meanwhile, the structure can reduce Miller capacitance Cres on the premise of not changing gate-emitter capacitance Cge, so that a relatively low Cre / Cge ratio is obtained, and the self turn on effect of simultaneous opening of an upper tube and a lower tube caused by voltage switching of the device in actual circuit application can be inhibited.

The present application discloses a circuit, a system and a method for battery heating, which relate to the field of vehicles. The specific implementation solution is as follows: at least one driving resistor array, which includes at least two parallel branches, each parallel branch includes a resistor and a switch connected in series, or each of at least two parallel branches except one parallel branch only includes a resistor includes a resistor and a switch connected in series; among the two ends where at least two parallel branches are connected in parallel, one end is used to access a driving signal, and the other end is used to be connected to the gate of an insulated gate bipolar transistor in the electric drive system of the vehicle; and the detection end of the heating control module is used to be connected to a device for detecting the temperature of the power battery of the vehicle, and the control end is respectively connected to at least one driving resistor array to control the opening and closing of the switch. The present application can change the gate input resistance of the IGBT device in the electric drive system to change its loss and adjust the efficiency of battery heating.

The invention relates to a circuit board (100), a transformer (50), a microwave generator (1000), and a home appliance, wherein the circuit board (100) is used in the microwave generator (1000), and the circuit board (100) comprises a substrate (10) and a power device (20), the power device (20) includes an integrated rectifier bridge stack and an insulated gate bipolar transistor, and the power device (20) is provided on the substrate (10).

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

To provide an IGBT (Insulative Gate Bipolar Transistor) which can reduce turn-on power loss and perform screening of a gate insulator.SOLUTION: An insulative gate bipolar transistor comprises: a gate trench 7a which extends in a specified extension direction set in advance in a plane view; a first insulator film 8a which is arranged at a bottom face of the gate trench 7a and at least a part of lateral face; a bottom gate conductive component 9a which is embedded in the gate trench 7a through the first insulator film 8a; a first split insulator film 10a which is arranged on the bottom gate conductive component 9a; an upper gate conductive component 11a which is embedded in the gate trench 7a through the first split insulator film 10a; a gate surface electrode 16 which is overlapped with one end of the gate trench 7a in the extension direction; a first contact hole 13c which electrically connects the gate surface electrode 16 with the bottom gate conductive component 9a; and a second contact hole 13a which electrically connects the gate surface electrode 16 with the upper gate conductive component 11a.SELECTED DRAWING: Figure 1