418 results about "Insulated-gate bipolar transistor" patented technology

The utility model provides an insulated gate bipolar transistor driving circuit with adjustable positive and negative voltages, comprising a magnetic isolation module, the input end of which is connected with a driving signal and outputs an isolation driving signal; the input end of the first voltage regulating module is connected with the first positive voltage and outputs a second positive voltage within a first preset range; the input end of the second voltage regulating module is connected with the first negative voltage and outputs a second negative voltage within a second preset range; the push-pull output module is connected between the second positive voltage and the second negative voltage, the control end of the push-pull output module is connected with an isolation driving signal, and the output end of the push-pull output module is connected with the gate pole of the to-be-tested insulated gate bipolar transistor through a gate resistor; and the protection module is controllably connected between the output end of the push-pull output module and the second voltage regulation module under the action of the control signal. The driving circuit has the beneficial effects that the positive and negative voltage output capability can be flexibly adjusted according to debugging requirements, the working condition requirements of different clients are met, and the flexibility and adaptability of the driving circuit are improved.

A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

The invention discloses a PTC power control method for IGBT (Insulated Gate Bipolar Transistor) staggered frequency starting and related equipment, and relates to the field of automobile heating, the method comprises the following steps: acquiring a target power value under the condition that a power request signal is received; based on the target power value, calculating to obtain an average starting duty ratio of the plurality of power control units; generating a first control signal corresponding to each power control unit based on the average opening duty ratio; according to the first control signal, controlling each power control unit to be switched on in an error frequency manner; when it is detected that the power difference value between the actual output power of each power control unit and the target power value exceeds a preset deviation threshold value, the starting duration of each power control unit is adjusted, and a second control signal is obtained; and controlling each power control unit based on the second control signal until the power difference value does not exceed the preset deviation threshold value. By implementing the method, the heating performance of the power control unit in automobile heating can be improved.

The invention relates to the technical field of circuit breakers, and discloses a fast-to-install primary and secondary fusion pole-mounted circuit breaker which comprises an installation frame and a circuit breaker body arranged on the installation frame, and core power electronic components such as an insulated gate bipolar transistor (IGBT) chip and a module are integrated in the pole-mounted circuit breaker body. The mounting rack is used for mounting a circuit breaker body to realize the functions of automatically cutting off a circuit and remote communication when a fault occurs, the mounting rack comprises a clamping assembly and a supporting piece, the supporting piece is used for mounting the circuit breaker body, and the clamping assembly is used for fastening the supporting piece on a telegraph pole. According to the pole-mounted circuit breaker, assembling and wiring of the circuit breaker body are completed on the ground firstly, then the circuit breaker body is rapidly fixed to the telegraph pole through the installation frame, the effect of improving the installation efficiency and reliability of the pole-mounted circuit breaker is achieved, and meanwhile the use flexibility of the installation frame is high.

The utility model relates to the technical field of auxiliary tools, and discloses an IGBT module production auxiliary tool which comprises a tool lower layer block, a placement groove is formed in the tool lower layer block, a positioning clamping mechanism is arranged at the top of the tool lower layer block, and a lower layer replacement mechanism is arranged at the bottom of the tool lower layer block. The positioning and clamping mechanism comprises a positioning assembly and a clamping assembly, and the clamping assembly is arranged at the top of the positioning assembly. According to the IGBT module production auxiliary tool, through the arranged positioning clamping mechanism, in the use process, through the arranged positioning insertion column, the tool upper layer pressing plate and the tool lower layer block can be positioned so that rapid installation can be achieved, by means of the elastic force of a spring, when a clamping block makes contact with a clamping column, the clamping column can be clamped and fixed through the clamping block, and the clamping effect is good. Therefore, the upper layer pressing plate of the tool is fixed, the upper layer and the lower layer of the tool are quickly butted and fixed, and the butt joint convenience of the tool is improved.

The invention relates to an IGBT (Insulated Gate Bipolar Translator) device field-circuit joint simulation method considering stray capacitance electrothermal characteristics, which belongs to the technical field of power semiconductor device simulation modeling, and comprises the following steps: S1, constructing an IGBT circuit model in Simulink; s2, an IGBT electrothermal coupling multi-physical field model is constructed in the COMSOL; s3, defining the material attribute of each part, and defining the voltage and temperature sensitive characteristics of the parasitic capacitance of the IGBT chip; the influence of temperature change and voltage change on interelectrode capacitance is considered, and a capacitance calculation formula based on electrostatics is defined; s4, setting multiple physical fields and boundary conditions, selecting electric field and thermal field coupling modules, and setting electric field intensity and temperature initial boundary conditions; s5, field-circuit combination is carried out on the Simulink model and the COMSOL model; and S6, Simulink-COMSOL joint simulation is carried out, and the dynamic and static characteristics of the IGBT are obtained through the simulation model.

The invention provides a method and a device for identifying a second-class short circuit state of an insulated gate bipolar transistor (IGBT), and relates to the technical field of IGBT devices. The invention aims to timely and accurately judge whether the insulated gate bipolar transistor is in the second-class short circuit state or not. The method comprises the following steps: acquiring an emitter structure of an insulated gate bipolar transistor in a test circuit; if the emitter structure does not have the auxiliary emitter, acquiring a chip gate voltage, a gate side line parasitic inductance, a gate parasitic inductance, an emitter side line parasitic inductance, a common emitter parasitic inductance, a gate current, a collector current and a current from a gate to a collector in a gate driving loop; on the basis of the Kirchhoff's voltage law, grid voltage is determined through the collected parameter data; and if the grid voltage is within the preset short-circuit voltage range, determining that the insulated gate bipolar transistor has a second-class short circuit.

The invention relates to the technical field of power transmission and distribution, and discloses a cable branch box convenient to maintain, an insulated gate bipolar transistor (IGBT) chip, a module and other core power electronic components are integrated in the cable branch box, the cable branch box comprises a box body, a switch device, a grounding device and a plurality of cables, and the switch device, the grounding device and the cables are arranged in the box body. A plurality of threading holes are formed in the distributor plate, the cables are arranged in the threading holes in a penetrating manner, wire numbers corresponding to the threading holes are arranged on the distributor plate, and the wire numbers correspond to wiring points on the switch device. According to the cable branch box, the cable is arranged in the threading hole in a penetrating manner, and the cable distributing plate slides up and down along with the box door and clamps or releases the cable when the box door is opened and closed, so that the effects of facilitating maintenance personnel to quickly identify the cable to be maintained and preventing the cable from being wound are achieved, the maintenance efficiency of the cable branch box is improved, and the risk of loosening of a cable joint is reduced.

The invention provides a temperature detection method, a temperature detection device and temperature detection equipment of an insulated gate bipolar transistor and a computer storage medium. The temperature detection method comprises the following steps: acquiring a heating value of an insulated gate bipolar transistor by using a motor rotating speed and a motor torque; obtaining a first heat conductivity coefficient of each layer of the insulated gate bipolar transistor by using the size parameter of each layer of the insulated gate bipolar transistor; acquiring a second heat conductivity coefficient of the radiator and the cooling liquid by utilizing the water pump rotating speed; calculating a first heat conduction thermal resistance based on the first heat conduction coefficient, and calculating a second heat conduction thermal resistance based on the second heat conduction coefficient; constructing a thermal network of the insulated gate bipolar transistor; and solving the thermal network of the insulated gate bipolar transistor through the calorific value to obtain the real-time temperature of each layer of the insulated gate bipolar transistor. According to the temperature detection method, the temperature information of the insulated gate bipolar transistor is calculated by using the known parameter information, and temperature monitoring can be realized by canceling additional electronic elements such as a temperature sensor and the like.

The invention discloses an insulated gate bipolar transistor device and a preparation process thereof, and the device comprises a substrate, a drain electrode which is formed below the substrate, a dielectric layer which is formed above the substrate, a source electrode which is formed above the dielectric layer, and a plurality of grooves which are formed in the substrate in a downward etching and sinking manner and are independently arranged, independent trench gates are deposited in the trenches, the cross section of the plurality of trenches is of a circular or annular or polygonal closed structure, and the trench gates are insulated and isolated from the side walls of the trenches and the source electrodes through dielectric layers. The novel groove type IGBT structure is achieved through the groove gates arranged in a circular layout mode, the structure has the advantages of being high in channel density, large in current density, simple in process and the like, and the chip area and the cost can be reduced while the current capacity is kept; or the current density and the power density of the device are improved while the chip area is maintained, and the on-state loss is reduced.

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

The invention discloses a rapidly-switched-on insulated gate bipolar transistor and a preparation method thereof, and relates to the technical field of semiconductors, the rapidly-switched-on insulated gate bipolar transistor comprises a gate bonding pad, a gate current amplification unit, a gate bus and a cell, the input end of the gate bonding pad is connected with an external gate driving circuit, and the output end of the gate bonding pad is connected with an external gate driving circuit; the output end of the grid electrode bonding pad is connected with the input end of the grid electrode current amplification unit, the output end of the grid electrode current amplification unit is connected with the input end of the grid electrode bus, the output end of the grid electrode bus is connected with the grid electrode of the cell, and the grid electrode current amplification unit is used for amplifying the grid electrode current output by the grid electrode bonding pad and outputting the amplified grid electrode current. According to the invention, by adding the grid current amplification unit, the grid current can be amplified, and the amplified grid current is used for driving the cell, so that the grid voltage rise rate of the cell is improved, and the purpose of improving the opening speed of the cell in the insulated gate bipolar transistor is achieved.

The invention relates to the technical field of energy storage, in particular to a high-voltage direct-hanging type net-forming type energy storage system and a topological structure, and a PCS converter in the energy storage system comprises a plurality of sub-modules, each sub-module comprises an H-bridge circuit, and each H-bridge circuit is composed of four insulated gate bipolar transistors; at least one DC support capacitor and inductor connected to the DC side of the H-bridge circuit and used for smoothing DC voltage fluctuation; the bypass switch is connected to two ends of the H-bridge circuit in parallel and is used for isolating the sub-module when the sub-module fails; and the direct-current interface circuit is connected in parallel to two ends of the plurality of sub-modules and is used for adjusting input and output of voltage according to instructions issued by the control system. Therefore, the problems that in the prior art, basic over-current protection is relied on, the reliability is poor in the face of complex faults, the structure occupies a large space, and maintenance is inconvenient are solved.

The invention relates to the technical field of power distribution cabinets, in particular to a rainproof and moistureproof outdoor power cabinet which comprises a cabinet body, an exhaust pipe is arranged in the cabinet body in a communicating mode, outer magnets are arranged on the two sides of the exhaust pipe, a fixing plate is fixedly connected to the interior of the exhaust pipe, and a double-shaft motor is fixedly connected to the outer side wall of the fixing plate. Through the arrangement of a draft fan, a cylinder and other mechanisms, when the cabinet is used in normal weather, the whole double-shaft motor drives the draft fan to rotate, external dry air is sucked into the cabinet body, circulation of the air in the cabinet body is promoted, and therefore the interior of the cabinet body is dehumidified, and when the cabinet is used in rainy days, the whole cylinder is filled with a silica gel desiccant; according to the electrical element box provided by the utility model, the inside of the cabinet body is adsorbed and dehumidified, and the whole cabinet body can be effectively dehumidified under any condition by switching the two dehumidification modes, so that the use of an insulated gate bipolar transistor chip and other electrical elements in the electrical element box is ensured.

The utility model discloses an insulated gate bipolar transistor for inhibiting a self-opening effect, and relates to the technical field of semiconductors. The control grid is located at the top of the groove and mainly used for controlling opening of the groove, the shielding grid is located at the bottom of the groove and can reduce turn-off loss of the Miller capacitor during reverse turn-off, meanwhile, the shielding grid can be used for the charge balance effect between the grooves, an electric field can be adjusted during reverse turn-off, depletion is achieved, and the requirement for reverse voltage resistance is met. Compared with a traditional device cellular structure, a shielding grid and a control grid are introduced to be integrated in the same groove, and the cellular density is effectively improved. And meanwhile, the structure can reduce Miller capacitance Cres on the premise of not changing gate-emitter capacitance Cge, so that a relatively low Cre / Cge ratio is obtained, and the self turn on effect of simultaneous opening of an upper tube and a lower tube caused by voltage switching of the device in actual circuit application can be inhibited.

The present application discloses a circuit, a system and a method for battery heating, which relate to the field of vehicles. The specific implementation solution is as follows: at least one driving resistor array, which includes at least two parallel branches, each parallel branch includes a resistor and a switch connected in series, or each of at least two parallel branches except one parallel branch only includes a resistor includes a resistor and a switch connected in series; among the two ends where at least two parallel branches are connected in parallel, one end is used to access a driving signal, and the other end is used to be connected to the gate of an insulated gate bipolar transistor in the electric drive system of the vehicle; and the detection end of the heating control module is used to be connected to a device for detecting the temperature of the power battery of the vehicle, and the control end is respectively connected to at least one driving resistor array to control the opening and closing of the switch. The present application can change the gate input resistance of the IGBT device in the electric drive system to change its loss and adjust the efficiency of battery heating.

The invention relates to a circuit board (100), a transformer (50), a microwave generator (1000), and a home appliance, wherein the circuit board (100) is used in the microwave generator (1000), and the circuit board (100) comprises a substrate (10) and a power device (20), the power device (20) includes an integrated rectifier bridge stack and an insulated gate bipolar transistor, and the power device (20) is provided on the substrate (10).

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

To provide an IGBT (Insulative Gate Bipolar Transistor) which can reduce turn-on power loss and perform screening of a gate insulator.SOLUTION: An insulative gate bipolar transistor comprises: a gate trench 7a which extends in a specified extension direction set in advance in a plane view; a first insulator film 8a which is arranged at a bottom face of the gate trench 7a and at least a part of lateral face; a bottom gate conductive component 9a which is embedded in the gate trench 7a through the first insulator film 8a; a first split insulator film 10a which is arranged on the bottom gate conductive component 9a; an upper gate conductive component 11a which is embedded in the gate trench 7a through the first split insulator film 10a; a gate surface electrode 16 which is overlapped with one end of the gate trench 7a in the extension direction; a first contact hole 13c which electrically connects the gate surface electrode 16 with the bottom gate conductive component 9a; and a second contact hole 13a which electrically connects the gate surface electrode 16 with the upper gate conductive component 11a.SELECTED DRAWING: Figure 1

A driving circuit for an insulated gate bipolar transistor (IGBT), an electronic apparatus, and a vehicle are provided. The driving circuit comprises a driving control circuit which is used for outputting a driving voltage signal at a first output end to control the switching state of an IGBT, and stopping outputting the driving voltage signal or setting the driving voltage signal as an invalid level when a short circuit fault at the IGBT is detected; a gate voltage control circuit for providing a gate voltage at a gate of the IGBT based on the driving voltage signal, and implementing discharge of the gate voltage in the case of a short-circuit fault at the IGBT; and a charge / discharge auxiliary circuit connected to the gate voltage control circuit for slowing down the discharge speed of the gate voltage in the case of a short-circuit fault at the IGBT.

The invention discloses a semiconductor device and an electronic apparatus, and the semiconductor device comprises a semiconductor substrate which comprises an insulated gate bipolar transistor region and a fast recovery diode region, and a collector layer is at least partially located in the insulated gate bipolar transistor region; the short circuit region is located in the fast recovery diode region; the rated current of the insulated gate bipolar transistor area is set to be I1, the rated current of the fast recovery diode area is set to be I2, and I1 and I2 meet the relational expression that I2 is smaller than or equal to I1 / 3. Therefore, the rated current of the fast recovery diode region can be small, and when the semiconductor device is used as a power chip in a PFC circuit, the area of the fast recovery diode region can be reduced, so that the whole semiconductor device is more miniaturized, the cost is reduced, the arrangement of the semiconductor device is convenient, the reverse recovery loss can be reduced, and the reliability of the semiconductor device is improved. And the heat dissipation performance can be improved.

A method for producing single-crystal silicon wafers for use in insulated gate bipolar transistors is disclosed. The method involves determining, for a relatively low-oxygen ingot, a radial profile of the ratio of (i) growth rate v and (ii) axial temperature gradient G. Based on the radial v / G profile, a nitrogen concentration can be selected that widens the v / G window to produce perfect silicon free of COPs and gate oxide defects.

The invention discloses a novel packaging structure of an IGBT (Insulated Gate Bipolar Transistor) product, which comprises a wafer (2), an IGBT and a diode are placed above the wafer (2), a PSV (Particle Spread Value) is arranged between the IGBT and the diode, RDL layers are arranged on the IGBT and the diode, and the RDL layers comprise a Pi1 layer and a Pi2 layer; comprising two sets of tin-lead protruding blocks which are placed at the two ends of an IGBT, and a copper column protruding block is arranged between the two sets of tin-lead protruding blocks. According to the invention, an advanced packaging copper pillar and flip packaging mode is used for replacing a traditional aluminum wire striking mode, in addition, a BGBM is used for thinning the thickness of a wafer, and composite metal materials such as Ti, Ni, Ag and Sn are evaporated on the back of the wafer, so that the thickness geometric volume is reduced, the interface adhesive force is increased, the stripping phenomenon is reduced, and the overall thermoelectric transmission efficiency of an original piece is improved.

A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT region, and has a lower impurity concentration than the contact region. The carrier suppression region has a Schottky barrier junction with the electrode.

The present invention provides a low-voltage power supply power-off protection circuit and a low-voltage power supply power-off protection device. The low-voltage power supply power-off protection circuit includes a first power supply input terminal connected to a first low-voltage power supply, a second power supply input terminal connected to a second low-voltage power supply, a comparison switch circuit, and an execution circuit. The first comparison terminal of the comparison switch circuit is connected to the first power supply input terminal, the second comparison terminal of the comparison switch circuit is connected to the second power supply input terminal, the power input terminal of the comparison switch circuit is connected to the first low-voltage power supply, and the power output terminal of the comparison switch circuit is connected to the power terminal of the execution circuit. The technical solution of the present invention can solve the technical problem of damage to insulated gate bipolar transistors caused by active short-circuiting operations performed by the electric drive system when the low-voltage power supply is lost.

The utility model provides an insulated gate bipolar transistor module, which is characterized in that a plurality of printed boards are arranged on a bottom board in parallel, a plurality of bridge arms are respectively and independently arranged on one printed board, a power input terminal is connected between an upper bridge arm and a lower bridge arm, and a first power output terminal and a second power output terminal are respectively connected at two ends of each bridge arm. The G pole control terminal, the E pole signal terminal and the C pole signal terminal are respectively connected with a circuit after the G poles of the bridge arms are connected in parallel, a circuit after the E poles of the bridge arms are connected in parallel and a circuit after the C poles of the bridge arms are connected in parallel, and the G pole signal terminal of the upper bridge arm and the G pole signal terminal of the lower bridge arm are respectively connected with a circuit after the G poles of the upper bridge arm are connected in parallel and a circuit after the G poles of the lower bridge arm are connected in parallel. According to the utility model, a plurality of chips are connected in parallel to realize the centralized control of a plurality of devices, and the rated current of the module is greatly increased.

The utility model discloses a heat radiator of an insulated gate bipolar transistor, which comprises a heat radiation main body connected with the insulated gate bipolar transistor, a heat radiation base connected with the heat radiation main body, a flow distribution plate and a partition plate, a sealed heat dissipation inner cavity is formed between the heat dissipation body and the heat dissipation base, a water inlet and a water outlet which are communicated with the heat dissipation inner cavity are formed in the heat dissipation base, the flow distribution plate is horizontally arranged in the heat dissipation inner cavity, the upper end of the partition plate is connected with the lower surface of the flow distribution plate, the lower end of the partition plate is connected with the upper surface of the heat dissipation base, and the water inlet and the water outlet are separated by the partition plate. A flow channel is formed between the water inlet and the water outlet, wherein the flow channel flows through the upper portion of the flow distribution plate from one side of the partition plate and then flows into the other side of the partition plate. And a turbulent flow assembly is arranged above the flow distribution plate. According to the utility model, the flow distribution plate and the partition plate are arranged in the heat dissipation inner cavity to form the flow channel for guiding the cooling liquid, and the heat dissipation effect of the heat dissipation device on the insulated gate bipolar transistor is ensured to be uniform in cooperation with the turbulent flow assembly.

This disclosure relates to the technical field of semiconductors. Through localized design optimization of the structure of existing Schottky-junction MOSFETs, the disclosure proposes a novel field-effect transistor possessing both large on-state current capability and normally-off functionality. The field-effect transistor disclosed herein comprises: an n-type semiconductor layer; a drain electrode; a source electrode; a gate electrode; and a gate insulating film. A Schottky barrier exists between a first portion of the source electrode and the n-type semiconductor layer, while a second portion of the source electrode contacts the n-type semiconductor layer forming an Ohmic contact. The on-state current capability of the field-effect transistor of the disclosure matches or even exceeds that of a pn-junction MOSFET under equivalent conditions.

An insulated gate bipolar transistor (IGBT), a motor control unit, and a vehicle are disclosed. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer and an RC-IGBT device structure feature layer are respectively arranged on two sides of an SJ device structure feature layer. The RC-IGBT device structure feature layer includes a collector and a drain that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode laminated with and electrically connected to the collector, and a second metal electrode laminated with and electrically connected to the drain, and the first metal electrode is electrically isolated from the second metal electrode.

The application provides an insulated gate bipolar transistor and a manufacturing method thereof, and relates to the fields of semiconductor power devices and manufacturing. In order to effectively reduce the on-voltage drop, the hole concentration in the N-type charge storage layer will significantly increase, which will cause the field intensity in the N-type charge storage layer to exponentially increase when the insulated gate bipolar transistor is in reverse blocking, and the collector-emitter reverse blocking voltage to decrease. In the embodiment, a part of the conductive channel is replaced by a first P+ region, the introduction of the first P+ region can make the field intensity in the N-type charge storage layer decrease and share the rising field intensity with the N-drift region. However, the introduction of the first P+ region will reduce the conductance modulation effect of the N-type charge storage layer, so the N+ intercepting region, the trench intercepting region and the hole extraction region arranged along the extension direction of the trench in the first P+ region are repeatedly arranged, the extraction rate of the key carrier holes is artificially adjusted, and the balance problem of the saturation voltage drop, the reverse cut-off voltage, the short circuit characteristic and the switching speed can be solved.